KR20130106404A - Adhesive film and tape for semiconductor wafer processing - Google Patents

Adhesive film and tape for semiconductor wafer processing Download PDF

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KR20130106404A
KR20130106404A KR1020137012090A KR20137012090A KR20130106404A KR 20130106404 A KR20130106404 A KR 20130106404A KR 1020137012090 A KR1020137012090 A KR 1020137012090A KR 20137012090 A KR20137012090 A KR 20137012090A KR 20130106404 A KR20130106404 A KR 20130106404A
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adhesive
film
adhesive layer
tape
adhesive film
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KR1020137012090A
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Korean (ko)
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KR101602025B1 (en
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마사미 아오야마
신이치 이시와타
야스마사 모리시마
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후루카와 덴키 고교 가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
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    • H01—ELECTRIC ELEMENTS
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
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  • Organic Chemistry (AREA)
  • Adhesive Tapes (AREA)
  • Dicing (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)

Abstract

접착제층이 공기 중의 수분을 흡수함으로써 연화되는 것을 저감시켜 픽업 미스의 발생을 억제할 수 있는 점착 필름 및 반도체 웨이퍼 가공용 테이프를 제공한다. 본 발명의 점착 필름은, 기재 필름과 상기 기재 필름 상에 형성된 점착제층을 포함하여 이루어지는 점착 필름이며, 투습도가 10.0g/㎡/day 이하이다. 또한, 본 발명의 반도체 웨이퍼 가공용 테이프는, 기재 필름과 상기 기재 필름 상에 형성된 점착제층을 포함하여 이루어지는 점착 필름과, 점착제층 상에 형성된 접착제층을 갖는 웨이퍼 가공용 테이프이며, 점착 필름의 투습도가 10.0g/㎡/day 이하이다.Provided are an adhesive film and a tape for processing a semiconductor wafer, which can reduce the softening by absorbing moisture in the air and thereby suppress the occurrence of pickup misses. The adhesive film of this invention is an adhesive film containing the base film and the adhesive layer formed on the said base film, and a water vapor transmission rate is 10.0 g / m <2> / day or less. Moreover, the tape for a semiconductor wafer process of this invention is a tape for wafer processing which has an adhesive film which consists of a base film and the adhesive layer formed on the said base film, and the adhesive bond layer formed on the adhesive layer, and the water vapor transmission rate of an adhesive film is 10.0. g / m <2> / day or less.

Description

점착 필름 및 반도체 웨이퍼 가공용 테이프{ADHESIVE FILM AND TAPE FOR SEMICONDUCTOR WAFER PROCESSING}Adhesive film and tape for semiconductor wafer processing {ADHESIVE FILM AND TAPE FOR SEMICONDUCTOR WAFER PROCESSING}

본 발명은, 반도체 웨이퍼를 반도체 칩으로 절단하여, 반도체 장치를 제조하기 위해서 사용하는 점착 필름 및 반도체 웨이퍼 가공용 테이프에 관한 것이다.TECHNICAL FIELD This invention relates to the adhesive film and tape for a semiconductor wafer process used to cut a semiconductor wafer into a semiconductor chip, and to manufacture a semiconductor device.

반도체 장치의 제조 공정에 사용되는 반도체 웨이퍼 가공용 테이프로서, 점착 필름(다이싱 테이프)에, 접착제층(다이 본딩 필름)이 적층된 구조를 갖는 반도체 웨이퍼 가공용 테이프가 제안되어(예를 들어, 특허문헌 1 참조), 이미 실용화되어 있다.As a tape for semiconductor wafer processing used for the manufacturing process of a semiconductor device, the tape for semiconductor wafer processing which has a structure by which the adhesive bond layer (die bonding film) was laminated | stacked on the adhesive film (dicing tape) is proposed (for example, a patent document) 1), it has already been put to practical use.

반도체 장치의 제조 공정에서는, 반도체 웨이퍼에 반도체 웨이퍼 가공용 테이프를 부착한 후, 반도체 웨이퍼를 다이싱 블레이드를 사용하여 칩 단위로 절단(다이싱)하는 공정, 반도체 웨이퍼 가공용 테이프를 익스팬드하는 공정, 또한 절단된 칩을 접착제층과 함께 점착제층으로부터 픽업하는 공정, 칩에 부착된 접착제층을 개재하여 칩을 기판 등에 실장하는 공정이 실시된다.In the manufacturing process of a semiconductor device, after attaching the tape for a semiconductor wafer process to a semiconductor wafer, the process of cutting (dicing) a semiconductor wafer by a chip unit using a dicing blade, the process of expanding the tape for a semiconductor wafer process, Furthermore, The process of picking up the cut | disconnected chip | tip with an adhesive bond layer from an adhesive layer, and the process of mounting a chip | tip in a board | substrate etc. via the adhesive bond layer adhered to a chip | tip are performed.

일본 특허 공개 평02-32181호 공보Japanese Patent Laid-Open No. 02-32181

그러나, 상기 특허문헌 1에 기재된 반도체 웨이퍼 가공용 테이프에서는, 수송 중이나 보관 중에 접착제층이 공기 중의 수분을 흡수하여 부드러워져, 절삭성이 저하되는 경우가 있었다.However, in the tape for semiconductor wafer processing of the said patent document 1, the adhesive bond layer absorbs the water | moisture content in air during transport and storage, and may be soft, and cutting property may fall.

이와 같은 경우에는, 다이싱 시에, 수염 형상의 절삭칩이 발생하고, 이들 절삭칩이 기재 필름이나 점착제층의 절삭칩과 함께 다이싱되어 인접하는 칩간에서 융착하여, 픽업 시에, 픽업하고자 하는 칩에 인접하는 칩이 부수되어 픽업되어버리는 픽업 미스(더블 다이)가 발생한다고 하는 문제가 있었다.In such a case, whisker-shaped cutting chips are generated during dicing, and these cutting chips are diced together with the cutting chips of the base film and the adhesive layer, and are fused between adjacent chips, and the pickup is to be picked up. There exists a problem that the pick-up miss (double die) which the chip adjacent to a chip accompanies and picks up arises.

따라서, 본 발명의 목적은, 접착제층이 공기 중의 수분을 흡수함으로써 연화되는 것을 저감시켜 픽업 미스의 발생을 억제할 수 있는 점착 필름 및 반도체 웨이퍼 가공용 테이프를 제공하는 것에 있다.It is therefore an object of the present invention to provide a pressure-sensitive adhesive film and a tape for semiconductor wafer processing that can reduce the softening by absorbing moisture in the air and suppress the occurrence of pickup misses.

상기 과제를 해결하기 위해서, 본 발명의 점착 필름은, 기재 필름과 상기 기재 필름 상에 형성된 점착제층을 포함하여 이루어지는 점착 필름이며, 투습도가 10.0g/㎡/day 이하인 것을 특징으로 한다.In order to solve the said subject, the adhesive film of this invention is an adhesive film containing the base film and the adhesive layer formed on the said base film, It is characterized by the water vapor transmission rate being 10.0 g / m <2> / day or less.

또한, 본 발명의 반도체 웨이퍼 가공용 테이프는, 기재 필름과 상기 기재 필름 상에 형성된 점착제층을 포함하여 이루어지는 점착 필름과, 상기 점착제층 상에 형성된 접착제층을 갖는 웨이퍼 가공용 테이프이며, 상기 점착 필름의 투습도가 10.0g/㎡/day 이하인 것을 특징으로 한다.Moreover, the tape for a semiconductor wafer process of this invention is a tape for wafer processing which has an adhesive film which consists of a base film and the adhesive layer formed on the said base film, and the adhesive bond layer formed on the said adhesive layer, and the moisture permeability of the said adhesive film Is 10.0 g / m 2 / day or less.

또한, 상기 반도체 웨이퍼 가공용 테이프에 있어서, 상기 점착 필름과 상기 접착제층을 합한 흡수율이 2.0체적％ 이하인 것이 바람직하다.Moreover, in the said tape for a semiconductor wafer process, it is preferable that the water absorption which combined the said adhesive film and the said adhesive bond layer is 2.0 volume% or less.

본 발명의 점착 필름 및 반도체 웨이퍼 가공용 테이프는, 점착 필름에 접착제층이 접합되어 수송ㆍ보관된 경우에, 접착제층이 공기 중의 수분을 흡수함으로써 연화되는 것을 저감시켜 픽업 미스의 발생을 억제할 수 있다.The adhesive film of the present invention and the tape for semiconductor wafer processing can reduce the softening of the adhesive layer by absorbing moisture in the air when the adhesive layer is bonded to the adhesive film and transported and stored, and can suppress the occurrence of pickup misses. .

도 1은 본 발명의 반도체 웨이퍼 가공용 테이프의 일례를 도시하는 단면도이다.
도 2의 (a)는 반도체 웨이퍼 가공용 테이프에, 반도체 웨이퍼(W)와 링 프레임이 접합된 상태를 도시하는 단면도이고, (b)는 다이싱 후의 반도체 웨이퍼 가공용 테이프와 반도체 웨이퍼를 도시하는 단면도이며, (c)는 익스팬드 후의 반도체 웨이퍼 가공용 테이프와 반도체 웨이퍼를 도시하는 단면도이다.BRIEF DESCRIPTION OF THE DRAWINGS It is sectional drawing which shows an example of the tape for a semiconductor wafer process of this invention.
(A) is sectional drawing which shows the state in which the semiconductor wafer W and the ring frame were bonded to the tape for a semiconductor wafer processing, (b) is sectional drawing which shows the semiconductor wafer processing tape and a semiconductor wafer after dicing. (c) is sectional drawing which shows the semiconductor wafer process tape and a semiconductor wafer after expansion.

이하에 본 발명의 실시 형태를 도면에 기초하여 상세하게 설명한다.BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

본 실시 형태에 관한 반도체 웨이퍼 가공용 테이프(15)는, 도 1에 도시한 바와 같이, 기재 필름(11) 상에 점착제층(12)이 적층된 점착 필름(14)을 갖고, 점착제층(12) 상에 접착제층(13)이 적층된 다이싱ㆍ다이 본딩 필름이다. 또한, 점착제층(12) 및 접착제층(13)은, 사용 공정이나 장치에 맞추어 미리 소정 형상으로 절단(프리컷)되어 있어도 된다. 웨이퍼(W)(도 2의 (a) 참조)에 따라서 프리컷된 접착제층(13)을 적층한 경우, 웨이퍼(W)가 접합되는 부분에는 접착제층(13)이 있고, 다이싱용의 링 프레임(20)(도 2의 (a) 참조)이 접합되는 부분에는 접착제층(13)이 없고 점착제층(12)만이 존재하게 된다. 일반적으로, 접착제층(13)은 피착체와 박리되기 어렵기 때문에, 프리컷된 접착제층(13)을 사용함으로써, 링 프레임(20)은 점착제층(12)에 접합할 수 있어, 사용 후의 링 프레임(20)에의 접착제 잔여물이 발생하기 어렵다고 하는 효과가 얻어진다. 또한, 본 발명의 반도체 웨이퍼 가공용 테이프(15)는, 웨이퍼 1장분마다 절단되어 적층된 형태와, 이것이 복수 형성된 긴 시트를 롤 형상으로 권취한 형태를 포함한다. 이하에, 기재 필름(11), 점착제층(12) 및 접착제층(13)에 대하여 각각 상세하게 설명한다.The tape 15 for semiconductor wafer processing which concerns on this embodiment has the adhesive film 14 in which the adhesive layer 12 was laminated | stacked on the base film 11, as shown in FIG. It is a dicing die bonding film by which the adhesive bond layer 13 was laminated | stacked on it. In addition, the adhesive layer 12 and the adhesive bond layer 13 may be cut | disconnected (precut) in predetermined shape previously according to a use process and an apparatus. In the case where the precut adhesive layer 13 is laminated in accordance with the wafer W (see FIG. 2A), the adhesive layer 13 is provided at the portion to which the wafer W is bonded, and the ring frame for dicing is used. In the part to which (20) (refer FIG. 2 (a)) is bonded, there is no adhesive bond layer 13, and only the adhesive layer 12 exists. In general, since the adhesive layer 13 is difficult to be peeled off from the adherend, the ring frame 20 can be bonded to the pressure-sensitive adhesive layer 12 by using the precut adhesive layer 13, and the ring after use An effect that the adhesive residue on the frame 20 is less likely to occur is obtained. Moreover, the tape 15 for a semiconductor wafer process of this invention includes the form cut | disconnected and laminated | stacked for every one sheet of wafer, and the form which wound the long sheet in which this was formed in multiple numbers in roll shape. Below, the base film 11, the adhesive layer 12, and the adhesive bond layer 13 are demonstrated in detail, respectively.

<기재 필름> <Base film>

기재 필름을 구성하는 재료로서는, 특별히 한정되지 않지만, 폴리올레핀 및 폴리염화비닐로부터 선택되는 것이 바람직하다.Although it does not specifically limit as a material which comprises a base film, What is chosen from polyolefin and polyvinyl chloride is preferable.

상기 폴리올레핀으로서는, 폴리에틸렌, 폴리프로필렌, 에틸렌-프로필렌 공중합체, 폴리부텐-1, 폴리-4-메틸펜텐-1, 에틸렌-아세트산비닐 공중합체, 에틸렌-아크릴산에틸 공중합체, 에틸렌-아크릴산메틸 공중합체, 에틸렌-아크릴산 공중합체, 아이오노머 등의 α-올레핀의 단독 중합체 또는 공중합체 혹은 이들의 혼합물 등을 들 수 있다.Examples of the polyolefin include polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-methyl acrylate copolymer, Homopolymers or copolymers of α-olefins such as ethylene-acrylic acid copolymers and ionomers, or mixtures thereof.

후술하는 점착제층으로서 방사선 조사에 의해 경화되어, 점착력이 저하되는 타입을 사용하는 경우에는, 기재 필름은 방사선 투과성인 것이 바람직하다. 기재 필름의 두께는, 강도 및 칩의 픽업성 확보의 관점에서, 50 내지 300㎛인 것이 바람직하다. 또한, 기재 필름은 단층이어도, 복수층으로 구성되어 있어도 된다.When using the type which hardens | cures by radiation irradiation and the adhesive force falls as an adhesive layer mentioned later, it is preferable that a base film is radiation transmissive. It is preferable that the thickness of a base film is 50-300 micrometers from a viewpoint of ensuring the strength and pick-up property of a chip | tip. In addition, even if a base film is a single | mono layer, you may be comprised by multiple layers.

<점착제층> <Pressure-sensitive adhesive layer>

점착제층은, 기재 필름 상에 점착제를 도포 시공하여 제조할 수 있다. 점착제층으로서는 특별히 제한은 없고, 익스팬드 시에 접착제층 및 반도체 웨이퍼가 박리되거나 하지 않을 정도의 유지성이나, 픽업 시에는 접착제층과 박리가 용이하게 되는 특성을 갖는 것이면 된다. 픽업성을 향상시키기 위해서, 점착제층은 방사선 경화성의 것이 바람직하다.An adhesive layer can be manufactured by apply | coating an adhesive on a base film. There is no restriction | limiting in particular as an adhesive layer, What is necessary is just to have the property of holding | maintenance to the extent that an adhesive bond layer and a semiconductor wafer do not peel at the time of expansion, and the adhesive layer and peeling property at the time of pick-up. In order to improve pick-up property, it is preferable that an adhesive layer is radiation curable.

예를 들어, 점착제에 사용되는 공지의 염소화 폴리프로필렌 수지, 아크릴 수지, 폴리에스테르 수지, 폴리우레탄 수지, 에폭시 수지, 부가 반응형 오르가노폴리실록산계 수지, 실리콘 아크릴레이트 수지, 에틸렌-아세트산비닐 공중합체, 에틸렌-아크릴산에틸 공중합체, 에틸렌-아크릴산메틸 공중합체, 에틸렌-아크릴산 공중합체, 폴리이소프렌이나 스티렌ㆍ부타디엔 공중합체나 그의 수소 첨가물 등의 각종 엘라스토머 등이나 그의 혼합물에, 방사선 중합성 화합물을 적절히 배합하여 점착제를 제조하는 것이 바람직하다. 또한, 각종 계면 활성제나 표면 평활화제를 첨가해도 된다. 점착제층의 두께는 특별히 한정되는 것은 아니며 적절하게 설정해도 되지만, 1 내지 30㎛가 바람직하다.For example, known chlorinated polypropylene resins, acrylic resins, polyester resins, polyurethane resins, epoxy resins, addition reaction type organopolysiloxane resins, silicone acrylate resins, ethylene-vinyl acetate copolymers used in pressure-sensitive adhesives, A radiation polymerizable compound is suitably blended with various elastomers such as ethylene-ethyl acrylate copolymer, ethylene-methyl acrylate copolymer, ethylene-acrylic acid copolymer, polyisoprene, styrene-butadiene copolymer, hydrogenated products thereof, and mixtures thereof. It is preferable to prepare an adhesive. Moreover, you may add various surfactant and surface leveling agent. Although the thickness of an adhesive layer is not specifically limited, Although you may set suitably, 1-30 micrometers is preferable.

중합성 화합물은, 예를 들어 광 조사에 의해 3차원 망상화할 수 있는 분자 내에 광중합성 탄소-탄소 이중 결합을 적어도 2개 이상 갖는 저분자량 화합물이나, 광중합성 탄소-탄소 이중 결합기를 치환기에 갖는 중합체나 올리고머가 사용된다. 구체적으로는, 트리메틸올프로판 트리아크릴레이트, 펜타에리트리톨 트리아크릴레이트, 펜타에리트리톨 테트라아크릴레이트, 디펜타에리트리톨 모노히드록시펜타아크릴레이트, 디펜타에리트리톨 헥사아크릴레이트, 1,4-부틸렌글리콜 디아크릴레이트, 1,6-헥산디올 디아크릴레이트, 폴리에틸렌글리콜 디아크릴레이트나, 올리고에스테르 아크릴레이트 등, 실리콘 아크릴레이트 등, 아크릴산이나 각종 아크릴산에스테르류의 공중합체 등이 적용 가능하다.The polymerizable compound is a low molecular weight compound having at least two or more photopolymerizable carbon-carbon double bonds in a molecule that can be three-dimensionally networked by light irradiation, or a polymer having a photopolymerizable carbon-carbon double bond group as a substituent. Or oligomers are used. Specifically, trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, 1,4-butylene Copolymers of acrylic acid and various acrylic acid esters, such as silicone acrylates, such as glycol diacrylate, 1, 6- hexanediol diacrylate, polyethyleneglycol diacrylate, and oligoester acrylate, are applicable.

또한, 상기와 같은 아크릴레이트계 화합물 외에, 우레탄 아크릴레이트계 올리고머를 사용할 수도 있다. 우레탄 아크릴레이트계 올리고머는, 폴리에스테르형 또는 폴리에테르형 등의 폴리올 화합물과, 다가 이소시아네이트 화합물(예를 들어, 2,4-톨릴렌 디이소시아네이트, 2,6-톨릴렌 디이소시아네이트, 1,3-크실릴렌 디이소시아네이트, 1,4-크실릴렌 디이소시아네이트, 디페닐메탄-4,4-디이소시아네이트 등)을 반응시켜 얻어지는 말단 이소시아네이트 우레탄 예비중합체에, 히드록실기를 갖는 아크릴레이트 혹은 메타크릴레이트(예를 들어, 2-히드록시에틸 아크릴레이트, 2-히드록시에틸 메타크릴레이트, 2-히드록시프로필 아크릴레이트, 2-히드록시프로필 메타크릴레이트, 폴리에틸렌글리콜 아크릴레이트, 폴리에틸렌글리콜 메타크릴레이트 등)를 반응시켜 얻어진다.In addition to the above acrylate compounds, urethane acrylate oligomers may also be used. The urethane acrylate oligomer is a polyol compound such as a polyester type or a polyether type, and a polyhydric isocyanate compound (for example, 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3- Acrylate or methacrylate which has a hydroxyl group in the terminal isocyanate urethane prepolymer obtained by making xylylene diisocyanate, 1, 4- xylylene diisocyanate, diphenylmethane-4, 4- diisocyanate etc. react. (For example, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, 2-hydroxypropyl methacrylate, polyethylene glycol acrylate, polyethylene glycol methacrylate, etc. Obtained by reacting

또한, 점착제층에는, 상기의 수지로부터 선택되는 2종 이상이 혼합된 것이어도 된다. 또한, 이상에 든 점착제의 재료는, 표면 자유 에너지를 40mJ/㎡ 이하로 하는 데 있어서, 트리플루오로메틸기, 디메틸실릴기, 장쇄 알킬기 등의 무극성기를 가능한 한 많이 분자 구조 중에 포함하는 것이 바람직하다.In addition, 2 or more types chosen from said resin may be mixed with the adhesive layer. In addition, in order to make surface free energy 40 mJ / m <2> or less, it is preferable that the above-mentioned adhesive material contains as many nonpolar groups as possible in a molecular structure, such as a trifluoromethyl group, a dimethylsilyl group, and a long-chain alkyl group.

또한, 점착제층의 수지에는, 방사선을 기재 필름에 조사하여 점착제층을 경화시키는 방사선 중합성 화합물 외에, 아크릴계 점착제, 광중합 개시제, 경화제 등을 적절히 배합하여 점착제를 제조할 수도 있다.Moreover, in addition to the radiation polymeric compound which irradiates a base film to irradiate a base film to harden an adhesive layer, resin of an adhesive layer can also mix | blend an acrylic adhesive, a photoinitiator, a hardening | curing agent, etc. suitably, and can also manufacture an adhesive.

광중합 개시제를 사용하는 경우, 예를 들어 이소프로필벤조인에테르, 이소부틸벤조인에테르, 벤조페논, 미힐러케톤, 클로로티오크산톤, 도데실티오크산톤, 디메틸티오크산톤, 디에틸티오크산톤, 벤질디메틸케탈, α-히드록시시클로헥실페닐케톤, 2-히드록시메틸페닐프로판 등을 사용할 수 있다. 이들 광중합 개시제의 배합량은 아크릴계 공중합체 100질량부에 대하여 0.01 내지 30질량부가 바람직하고, 1 내지 10중량부가 보다 바람직하다.When using a photoinitiator, For example, isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chloro thioxanthone, dodecyl thioxanthone, dimethyl thioxanthone, diethyl thioxanthone, Benzyl dimethyl ketal, α-hydroxycyclohexylphenyl ketone, 2-hydroxymethylphenylpropane and the like can be used. 0.01-30 mass parts is preferable with respect to 100 mass parts of acrylic copolymers, and, as for the compounding quantity of these photoinitiators, 1-10 weight part is more preferable.

또한, 점착제 중에 저분자 성분이 존재하고 있으면, 기재 필름 제조 후에 장기 보관하고 있는 동안에 저분자 성분이 점착제층 표면으로 이행하여 점접착 특성을 손상시킬 우려가 있기 때문에, 겔 분율이 높은 것이 바람직하고, 통상 60％ 이상, 바람직하게는 70％ 이상이다. 여기서, 겔 분율이란, 이하와 같이 산출되는 것을 말한다. 점착제층 약 0.05g을 칭량하여 취하고, 크실렌 50㎖에 120℃에서 24시간 침지한 후, 200메쉬의 스테인리스제 금속망으로 여과하고, 금속망 상의 불용해분을 110℃에서 120분간 건조한다. 이어서, 건조한 불용해분의 질량을 칭량하고, 하기에 나타내는 수학식 1에 의해 겔 분율을 산출한다.If the low molecular weight component is present in the pressure-sensitive adhesive, the low molecular weight component may migrate to the surface of the pressure-sensitive adhesive layer and damage the adhesive properties during long-term storage after the production of the base film. % Or more, Preferably it is 70% or more. Here, a gel fraction means what is computed as follows. About 0.05 g of the pressure-sensitive adhesive layer is weighed out, immersed in 50 ml of xylene at 120 ° C. for 24 hours, filtered through a 200 mesh stainless steel metal mesh, and the insoluble content on the metal mesh is dried at 110 ° C. for 120 minutes. Subsequently, the mass of the dry insoluble content is weighed and a gel fraction is computed by following formula (1).

Figure pct00001
Figure pct00001

점착 필름의 투습도는 10.0g/㎡/day 이하이다. 이와 같이, 점착 필름의 투습도를 10.0g/㎡/day 이하로 함으로써, 반도체 웨이퍼 가공용 테이프가 웨이퍼 1장분마다 절단되어 적층된 상태 혹은 긴 시트를 롤 형상으로 권취한 상태로 한창 수송ㆍ보관되는 중에 공기 중의 수증기가 외측으로부터 내측으로 투과하기 어려워지기 때문에, 접착제층에 도달하는 수분량이 감소하여 접착제층의 연화가 저감된다. 이 때문에, 다이싱 시의 수염 형상의 절삭칩의 발생이 저감되어, 이들 절삭칩이 기재 필름이나 점착제층의 절삭칩과 함께 다이싱되어 인접하는 칩간에서 융착하여, 픽업 시에 픽업 미스가 발생하는 것을 억제할 수 있다.The water vapor transmission rate of an adhesive film is 10.0g / m <2> / day or less. In this way, the moisture permeability of the pressure-sensitive adhesive film is 10.0 g / m 2 / day or less, so that the semiconductor wafer processing tape is cut and stacked for each wafer, and the air is transported and stored in the state of being rolled up in a state in which a long sheet is rolled up. Since water vapor in it becomes difficult to permeate from the outside to the inside, the amount of water reaching the adhesive layer is reduced, and softening of the adhesive layer is reduced. For this reason, generation | occurrence | production of the beard-shaped cutting chip at the time of dicing is reduced, these cutting chips are diced together with the cutting chip of a base film or an adhesive layer, they are fused between adjacent chips, and pick-up miss arises at the time of pick-up. Can be suppressed.

점착 필름의 투습도를 저하시키기 위해서는, 기재 필름에 사용하는 중합체로서, 폴리에틸렌, 폴리프로필렌, 폴리에틸렌나프탈레이트 등 투습도가 낮은 중합체를 사용하면 된다. 또한, 기재 필름의 두께를 크게 함으로써, 점착 필름의 투습도를 저하시킬 수도 있다. 또한, 점착 필름의 투습도를 저하시키기 위해서는, 점착제층의 두께를 두껍게 하면 된다. 또한, 점착제층의 가교 밀도를 올림으로써 투습도를 저하시킬 수도 있다. 가교 밀도를 내리기 위해서는, 경화제량을 증가시키거나 또는 점착제층에 수산기가 많은 중합체를 사용하면 된다.In order to reduce the moisture permeability of the adhesive film, a polymer having a low moisture permeability, such as polyethylene, polypropylene, polyethylene naphthalate, or the like may be used as the polymer used for the base film. Moreover, the water vapor transmission rate of an adhesion film can also be reduced by increasing the thickness of a base film. Moreover, what is necessary is just to thicken the thickness of an adhesive layer in order to reduce the water vapor transmission rate of an adhesive film. Moreover, moisture permeability can also be reduced by raising the crosslinking density of an adhesive layer. In order to reduce the crosslinking density, it is sufficient to increase the amount of the curing agent or to use a polymer having many hydroxyl groups in the pressure-sensitive adhesive layer.

<접착제층> <Adhesive Layer>

접착제층은, 반도체 웨이퍼가 접합되어 절단된 후 칩을 픽업할 때에, 절단된 접착제층이 점착제층으로부터 박리되어 칩에 부착되어 있어, 칩을 패키지 기판이나 리드 프레임에 고정할 때의 본딩 필름으로서 기능하는 것이다.When picking up a chip after a semiconductor wafer is bonded and cut | disconnected, an adhesive bond layer peels from an adhesive layer and adheres to a chip | tip, and functions as a bonding film at the time of fixing a chip to a package board | substrate or a lead frame. It is.

접착제층은 접착제를 미리 필름화한 것이며, 예를 들어 접착제에 사용되는 공지의 폴리이미드 수지, 폴리아미드 수지, 폴리에테르이미드 수지, 폴리아미드이미드 수지, 폴리에스테르 수지, 폴리에스테르이미드 수지, 페녹시 수지, 폴리술폰 수지, 폴리에테르술폰 수지, 폴리페닐렌술피드 수지, 폴리에테르케톤 수지, 염소화 폴리프로필렌 수지, 아크릴 수지, 폴리우레탄 수지, 에폭시 수지, 폴리아크릴아미드 수지, 멜라민 수지 등이나 그의 혼합물을 사용할 수 있지만, 접착제층(13)의 분단성을 양호하게 하기 위해서는, 아크릴계 공중합체, 에폭시 수지를 포함하고, 아크릴계 공중합체의 Tg가 10℃ 이상인 것이 바람직하다. 또한, 무기 필러를 50％ 이상 함유하는 것이 바람직하다. 또한, 칩이나 리드 프레임에 대한 접착력을 강화하기 위해서, 실란 커플링제 혹은 티타늄 커플링제를 첨가제로서 상기 재료나 그의 혼합물에 첨가하는 것이 바람직하다. 접착제층의 두께는 특별히 제한되는 것은 아니지만, 통상 5 내지 100㎛ 정도가 바람직하다.The adhesive layer is obtained by film-forming an adhesive in advance, and for example, a known polyimide resin, polyamide resin, polyetherimide resin, polyamideimide resin, polyester resin, polyesterimide resin, and phenoxy resin, , Polysulfone resin, polyether sulfone resin, polyphenylene sulfide resin, polyether ketone resin, chlorinated polypropylene resin, acrylic resin, polyurethane resin, epoxy resin, polyacrylamide resin, melamine resin and the like or mixtures thereof can be used. However, in order to make the adhesiveness of the adhesive bond layer 13 favorable, it is preferable that an acrylic copolymer and an epoxy resin are included and Tg of an acrylic copolymer is 10 degreeC or more. Moreover, it is preferable to contain 50% or more of inorganic fillers. It is also preferable to add a silane coupling agent or a titanium coupling agent to the material or a mixture thereof as an additive in order to enhance adhesion to a chip or a lead frame. Although the thickness of an adhesive bond layer is not specifically limited, Usually, about 5-100 micrometers is preferable.

에폭시 수지는 경화되어 접착 작용을 나타내는 것이면 특별히 제한은 없지만, 2관능기 이상이며, 바람직하게는 분자량이 5000 미만, 보다 바람직하게는 3000 미만인 에폭시 수지를 사용할 수 있다. 또한, 바람직하게는 분자량이 500 이상, 보다 바람직하게는 800 이상인 에폭시 수지를 사용할 수 있다.The epoxy resin is not particularly limited as long as it is cured to exhibit an adhesive action. However, the epoxy resin is at least bifunctional, preferably an epoxy resin having a molecular weight of less than 5000, more preferably less than 3000. In addition, an epoxy resin having a molecular weight of preferably 500 or more, more preferably 800 or more can be used.

예를 들어, 비스페놀 A형 에폭시 수지, 비스페놀 F형 에폭시 수지, 비스페놀 S형 에폭시 수지, 지환식 에폭시 수지, 지방족 쇄상 에폭시 수지, 페놀 노볼락형 에폭시 수지, 크레졸 노볼락형 에폭시 수지, 비스페놀 A 노볼락형 에폭시 수지, 비페놀의 디글리시딜 에테르화물, 나프탈렌디올의 디글리시딜 에테르화물, 페놀류의 디글리시딜 에테르화물, 알코올류의 디글리시딜 에테르화물 및 이들의 알킬 치환체, 할로겐화물, 수소 첨가물 등의 2관능 에폭시 수지, 노볼락형 에폭시 수지를 들 수 있다. 또한, 다관능 에폭시 수지나 복소환 함유 에폭시 수지 등, 일반적으로 알려져 있는 것을 적용할 수도 있다. 이들은 단독으로 또는 2종류 이상을 조합하여 사용할 수 있다. 또한, 특성을 손상시키지 않는 범위에서 에폭시 수지 이외의 성분이 불순물로서 포함되어 있어도 된다.For example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, alicyclic epoxy resin, aliphatic chain epoxy resin, phenol novolak type epoxy resin, cresol novolak type epoxy resin, bisphenol A novolak Type epoxy resin, diglycidyl etherate of biphenol, diglycidyl etherate of naphthalenediol, diglycidyl etherate of phenols, diglycidyl etherate of alcohols and their alkyl substituents, halides And bifunctional epoxy resins, such as hydrogenated substance, and novolak-type epoxy resins are mentioned. Moreover, what is generally known, such as a polyfunctional epoxy resin and a heterocyclic containing epoxy resin, can also be applied. These may be used alone or in combination of two or more. Moreover, components other than an epoxy resin may be contained as an impurity in the range which does not impair a characteristic.

아크릴계 공중합체로서는, 예를 들어 에폭시기 함유 아크릴 공중합체를 사용할 수 있다. 에폭시기 함유 아크릴 공중합체는 에폭시기를 갖는 글리시딜아크릴레이트 또는 글리시딜메타크릴레이트를 0.5 내지 6중량％ 포함한다. 높은 접착력을 얻기 위해서는, 0.5중량％ 이상이 바람직하고, 6중량％ 이하이면 겔화를 억제할 수 있다.As an acryl-type copolymer, an epoxy group containing acrylic copolymer can be used, for example. The epoxy group-containing acrylic copolymer contains 0.5 to 6% by weight of glycidyl acrylate or glycidyl methacrylate having an epoxy group. In order to obtain a high adhesive force, 0.5 weight% or more is preferable and gelatinization can be suppressed as it is 6 weight% or less.

관능기 단량체로서 사용하는 글리시딜아크릴레이트 또는 글리시딜메타크릴레이트의 양은 0.5 내지 6중량％의 공중합체비이다. 즉, 본 발명에 있어서 에폭시기 함유 아크릴 공중합체는, 원료로서 글리시딜아크릴레이트 또는 글리시딜메타크릴레이트를, 얻어지는 공중합체에 대하여 0.5 내지 6중량％로 되는 양을 사용하여 얻어진 공중합체를 말한다. 그 잔량부는 메틸아크릴레이트, 메틸메타크릴레이트 등의 탄소수 1 내지 8의 알킬기를 갖는 알킬아크릴레이트, 알킬메타크릴레이트 및 스티렌이나 아크릴로니트릴 등의 혼합물을 사용할 수 있다. 이들 중에서도 에틸(메트)아크릴레이트 및/또는 부틸(메트)아크릴레이트가 특히 바람직하다. 혼합 비율은, 공중합체의 Tg를 고려하여 조정하는 것이 바람직하다. 중합 방법은 특별히 제한이 없고, 예를 들어, 펄 중합, 용액 중합 등을 들 수 있고, 이들 방법에 의해 공중합체가 얻어진다. 에폭시기 함유 아크릴 공중합체의 중량 평균 분자량은 10만 이상이며, 이 범위이면 접착성 및 내열성이 높고, 30만 내지 300만인 것이 바람직하고, 50만 내지 200만인 것이 보다 바람직하다. 300만 이하이면, 플로우성이 저하됨으로써, 반도체 소자를 부착하는 지지 부재에 필요에 따라서 형성된 배선 회로에의 충전성이 저하될 가능성을 저감시킬 수 있다.The amount of glycidyl acrylate or glycidyl methacrylate to be used as the functional group monomer is a copolymer ratio of 0.5 to 6% by weight. That is, in this invention, an epoxy-group containing acrylic copolymer says the copolymer obtained using the amount which becomes 0.5 to 6 weight% with respect to the copolymer which glycidyl acrylate or glycidyl methacrylate is obtained as a raw material. . The remainder may be a mixture of alkyl acrylate, alkyl methacrylate, and styrene or acrylonitrile having an alkyl group having 1 to 8 carbon atoms such as methyl acrylate and methyl methacrylate. Among these, ethyl (meth) acrylate and / or butyl (meth) acrylate are especially preferable. It is preferable to adjust a mixing ratio in consideration of Tg of a copolymer. There is no restriction | limiting in particular in polymerization method, For example, pearl polymerization, solution polymerization, etc. are mentioned, A copolymer is obtained by these methods. The weight average molecular weight of an epoxy-group-containing acrylic copolymer is 100,000 or more, adhesiveness and heat resistance are high in this range, It is preferable that it is 300,000-3 million, and it is more preferable that it is 500,000-2 million. If it is 3 million or less, since a flow property falls, the possibility of the chargeability to the wiring circuit formed as needed in the support member to which a semiconductor element is affixed can be reduced.

또한, 중량 평균 분자량은 겔 투과 크로마토그래피법(GPC)에 의해 표준 폴리스티렌에 의한 검량선을 사용한 폴리스티렌 환산값이다.In addition, a weight average molecular weight is a polystyrene conversion value using the analytical curve by standard polystyrene by gel permeation chromatography method (GPC).

무기 필러로서는 특별히 제한이 없고, 예를 들어, 수산화알루미늄, 수산화마그네슘, 탄산칼슘, 탄산마그네슘, 규산칼슘, 규산마그네슘, 산화칼슘, 산화마그네슘, 산화알루미늄, 질화알루미늄, 붕산알루미늄 위스커, 질화붕소, 결정질 실리카, 비정질 실리카 등을 들 수 있다. 이들은 1종 또는 2종 이상을 병용할 수도 있다. 열전도성 향상을 위해서는, 산화알루미늄, 질화알루미늄, 질화붕소, 결정성 실리카, 비정질성 실리카 등이 바람직하다. 특성의 밸런스의 관점에서는 실리카가 바람직하다.There is no restriction | limiting in particular as an inorganic filler, For example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline Silica, amorphous silica, etc. are mentioned. These can also use together 1 type (s) or 2 or more types. In order to improve thermal conductivity, aluminum oxide, aluminum nitride, boron nitride, crystalline silica, amorphous silica and the like are preferable. From the viewpoint of balance of properties, silica is preferable.

필러의 평균 입경은 0.002 내지 2㎛인 것이 바람직하고, 0.008 내지 0.5㎛인 것이 보다 바람직하고, 0.01 내지 0.05㎛인 것이 더욱 바람직하다. 필러의 평균 입경이 0.002㎛ 미만이면 피착체에의 습윤성이 저하되어 접착성이 저하되는 경향이 있고, 2㎛를 초과하면 필러 첨가에 의한 보강 효과가 작아져 내열성이 저하되는 경향이 있다. 여기서, 평균 입경이란, TEM, SEM 등에 의해 측정한 필러 100개의 입경으로부터 구해지는 평균값을 말한다.It is preferable that the average particle diameter of a filler is 0.002-2 micrometers, It is more preferable that it is 0.008-0.5 micrometer, It is still more preferable that it is 0.01-0.05 micrometer. If the average particle diameter of the filler is less than 0.002 µm, the wettability to the adherend tends to decrease, and the adhesion tends to decrease. If the average particle diameter exceeds 2 µm, the reinforcing effect by the filler addition tends to decrease, and the heat resistance tends to decrease. Here, an average particle diameter means the average value calculated | required from the particle diameter of 100 fillers measured by TEM, SEM, etc.

반도체 웨이퍼 가공용 테이프는, 점착제층과 접착제층 사이의 박리성을 좋게 하는 관점에서, 점착 필름과 접착제층을 합한 흡수율을 2.0체적％ 이하로 하는 것이 바람직하다. 종래, 픽업 시에, 점착제층과 접착제층 사이의 박리를 용이하게 하기 위해서, 웨이퍼 가공용 테이프의 하측으로부터 핀에 의해 반도체 칩을 밀어올리는 힘이나 밀어올림 높이를 크게 하는 것이 행해지고 있지만, 최근 반도체 칩이 얇아지는 경향이 있고, 반도체 칩이 얇은 경우에, 밀어올리는 힘을 크게 하면 칩이 파손되어 버린다고 하는 문제도 있었다. 점착 필름과 접착제층을 합한 흡수율이 2.0체적％ 이하이면, 접착제층이 연화되어 절삭 시에 점착제층과 함께 유착하거나, 점착 필름이 흡수한 수분이 접착제층으로 이행하여 양자가 유착하는 것을 저감시킬 수 있으므로, 점착제층과 접착제층 사이의 박리성이 좋아진다. 이 때문에, 핀에 의한 밀어올리는 힘을 크게 할 필요가 없기 때문에, 반도체 칩이 얇은 경우라도 양호하게 픽업할 수 있다.It is preferable that the tape for a semiconductor wafer process makes the water absorption which combined the adhesive film and an adhesive bond layer into 2.0 volume% or less from a viewpoint of making peelability between an adhesive layer and an adhesive bond layer good. Conventionally, in order to facilitate peeling between the pressure-sensitive adhesive layer and the adhesive layer at the time of pick-up, increasing the force and the height of pushing up the semiconductor chip by the pins from the lower side of the tape for wafer processing have been performed. It tends to be thin, and when a semiconductor chip is thin, there also existed a problem that a chip would be damaged when a pushing force was enlarged. When the combined absorption rate of the pressure-sensitive adhesive film and the adhesive layer is 2.0% by volume or less, the adhesive layer softens and adheres together with the pressure-sensitive adhesive layer during cutting, or the moisture absorbed by the pressure-sensitive adhesive film migrates to the adhesive layer to reduce the adhesion between the two. Therefore, the peelability between an adhesive layer and an adhesive bond layer improves. For this reason, since it is not necessary to increase the pushing force by a pin, even if a semiconductor chip is thin, it can pick up favorably.

점착 필름과 접착제층을 합한 흡수율을 저하시키기 위해서는, 기재 필름에 사용하는 중합체로서 폴리프로필렌, 폴리에틸렌 등 흡수율이 낮은 중합체를 사용하면 된다. 또한, 기재 필름의 두께를 작게 함으로써 흡수율을 저하시킬 수도 있다. 또한, 점착제층은 히드록시기, 아미노기, 술포기, 카르복실기 등의 관능기나 아미드 결합, 에테르 결합 부분을 적게 하고, 메틸기나 아릴기의 도입량을 증가시킴으로써 흡수율을 저하시킬 수 있다. 또한, 접착제층에 아크릴 등 흡수율이 낮은 중합체를 사용함으로써 흡수율을 저하시킬 수도 있다. 또한, 접착제층에 사용하는 에폭시나 페놀 등에 대하여, 분자량이 낮은 것을 사용함으로써 흡수율을 저하시킬 수도 있다. 또한, 접착제층에 포함되는 무기 필러의 양을 저감함으로써도 흡수율을 저하시킬 수도 있다.In order to reduce the water absorption which combined the adhesive film and an adhesive bond layer, what is necessary is just to use a low water absorption polymer, such as a polypropylene and polyethylene, as a polymer used for a base film. Moreover, water absorption can also be reduced by making thickness of a base film small. The pressure-sensitive adhesive layer can reduce water absorption by reducing functional groups such as hydroxy groups, amino groups, sulfo groups, carboxyl groups, amide bonds and ether bonds, and increasing the amount of methyl or aryl groups introduced. Moreover, water absorption can also be reduced by using a low water absorption polymer, such as an acryl, for an adhesive bond layer. Moreover, water absorption can also be reduced by using the thing with low molecular weight with respect to the epoxy, phenol, etc. which are used for an adhesive bond layer. Moreover, water absorption can also be reduced by reducing the quantity of the inorganic filler contained in an adhesive bond layer.

이어서, 도 1에 도시한 본 발명의 반도체 웨이퍼 가공용 테이프(15)를 사용하여 접착제층을 구비한 반도체 칩을 제조하는 방법에 대하여, 도 2를 참조하면서 설명한다.Next, the method of manufacturing the semiconductor chip provided with the adhesive bond layer using the tape 15 for a semiconductor wafer process of this invention shown in FIG. 1 is demonstrated, referring FIG.

(접합 공정)(Bonding step)

우선, 도 2의 (a)에 도시한 바와 같이, 반도체 웨이퍼 가공용 테이프(15)의 접착제층(13)에 반도체 웨이퍼(W)의 이면을 접합함과 함께, 점착제층(12)의 소정 위치에 링 프레임(20)을 접합한다.First, as shown to Fig.2 (a), the back surface of the semiconductor wafer W is bonded to the adhesive bond layer 13 of the tape 15 for a semiconductor wafer process, and it is located in the predetermined position of the adhesive layer 12. The ring frame 20 is joined.

(다이싱 공정)(Dicing step)

흡착 스테이지(22)에 의해 웨이퍼 가공용 테이프(15)를 기재 필름(11)면측으로부터 흡착 지지하고, 도시하지 않은 블레이드를 사용하여 반도체 웨이퍼(W)를 기계적으로 절단하여, 복수의 반도체 칩(C)으로 분할한다(도 2의 (b)). 또한, 이때, 접착제층(13)이나 점착제층(12), 기재 필름(11)의 일부도 적절히 다이싱된다. 이때, 점착 필름의 투습도가 10.0g/㎡/day 이하이기 때문에, 반도체 웨이퍼 가공용 테이프의 수송ㆍ보관 중에 공기 중의 수증기가 외측으로부터 내측으로 투과하기 어려워 접착제층의 연화가 저감되어 있기 때문에, 수염 형상의 절삭칩의 발생이 저감된다.The adsorption stage 22 adsorbs and supports the wafer processing tape 15 from the base film 11 surface side, mechanically cuts the semiconductor wafer W using a blade (not shown), thereby providing a plurality of semiconductor chips C. (B) of FIG. 2. At this time, a part of the adhesive layer 13, the pressure-sensitive adhesive layer 12, and the base film 11 is also appropriately diced. At this time, since the water vapor transmission rate of the adhesive film is 10.0 g / m 2 / day or less, since water vapor in the air is difficult to permeate from the outside to the inside during transport and storage of the tape for semiconductor wafer processing, softening of the adhesive layer is reduced, The generation of cutting chips is reduced.

(조사 공정) (Investigation process)

그리고, 방사선을 기재 필름(11)의 하면으로부터 점착제층(12)에 조사하여 점착제층(12)을 경화시킨다. 경화시킨 점착제층(12)은 점착력이 저하되기 때문에, 점착제층(12) 상의 접착제층(13)을 박리시키는 것이 가능하게 된다. 또한, 점착제층을 복수의 층으로 구성하는 경우, 접착제층(13)을 점착제층(12)으로부터 박리하기 위해서 점착제층 전체를 경화시킬 필요는 없고, 적어도 웨이퍼에 대응하는 점착제층 부분을 경화시켜도 된다.And the radiation layer is irradiated to the adhesive layer 12 from the lower surface of the base film 11, and the adhesive layer 12 is hardened. Since the adhesive force of the cured adhesive layer 12 falls, it becomes possible to peel off the adhesive bond layer 13 on the adhesive layer 12. FIG. When the pressure-sensitive adhesive layer is composed of a plurality of layers, the entire pressure-sensitive adhesive layer does not need to be cured in order to peel the adhesive layer 13 from the pressure-sensitive adhesive layer 12, and at least the pressure-sensitive adhesive layer portion corresponding to the wafer may be cured. .

(익스팬드 공정) (Expand Process)

조사 공정 후, 분할된 복수의 반도체 칩(C)을 유지하는 반도체 웨이퍼 가공용 테이프(15)를 익스팬드 장치의 스테이지(21) 상에 적재한다. 그리고, 도 2의 (c)에 도시한 바와 같이, 중공 원기둥 형상의 밀어올림 부재(23)를 반도체 웨이퍼 가공용 테이프(15)의 하면측으로부터 상승시켜, 상기 점착 필름(14)을 링 프레임(20)의 직경 방향 및 둘레 방향으로 늘인다.After the irradiation step, the semiconductor wafer processing tape 15 holding the divided semiconductor chips C is loaded on the stage 21 of the expander. And as shown in FIG.2 (c), the hollow cylindrical pushing-up member 23 is raised from the lower surface side of the tape 15 for semiconductor wafer processing, and the said adhesive film 14 is raised to the ring frame 20. As shown in FIG. ) In the radial and circumferential directions.

(픽업 공정)(Pickup process)

익스팬드 공정을 실시한 후, 점착 필름(14)을 익스팬드한 상태 그대로, 칩(C)을 픽업하는 픽업 공정을 실시한다. 구체적으로는, 점착 필름(14)의 하측으로부터 칩(C)을 핀(도시 생략)에 의해 밀어올림과 함께, 점착 필름(14)의 상면측으로부터 흡착 지그(도시 생략)로 칩(C)을 흡착함으로써, 개편화된 칩(C)을 접착제층(13)과 함께 픽업한다. 다이싱 공정에 있어서 접착제층(13)의 수염 형상의 절삭칩의 발생이 저감되기 때문에, 이들 절삭칩이 기재 필름(11)이나 점착제층(12)의 절삭칩과 함께 인접하는 칩간에서 융착하여 픽업 미스가 발생하는 것을 억제할 수 있다. 또한, 점착 필름(14)과 접착제층(13)을 합한 흡수율이 2.0체적％ 이하인 경우는, 점착제층(12)과 접착제층(13) 사이의 박리가 용이해지기 때문에, 반도체 칩(C)의 두께가 얇은 경우라도 양호하게 픽업된다.After performing an expand process, the pick-up process of picking up the chip | tip C is performed in the state which expanded the adhesive film 14 as it is. Specifically, the chip C is pushed up from the lower side of the adhesive film 14 by a pin (not shown), and the chip C is removed from the upper surface side of the adhesive film 14 by an adsorption jig (not shown). By adsorption, the separated chips C are picked up together with the adhesive layer 13. Since the generation of the beard-shaped cutting chips of the adhesive layer 13 is reduced in the dicing step, these cutting chips are fused together between the chips adjacent to the base film 11 or the adhesive layer 12 and picked up. The occurrence of a miss can be suppressed. Moreover, when the water absorption which combined the adhesive film 14 and the adhesive bond layer 13 is 2.0 volume% or less, since peeling between the adhesive layer 12 and the adhesive bond layer 13 becomes easy, the semiconductor chip C of the Even if the thickness is thin, the pickup is satisfactory.

(다이 본딩 공정) (Die bonding step)

그리고, 픽업 공정을 실시한 후, 다이 본딩 공정을 실시한다. 구체적으로는, 픽업 공정에서 칩(C)와 함께 픽업된 접착제층에 의해, 반도체 칩을 리드 프레임이나 패키지 기판 등에 접착하여 반도체 장치를 제조한다.And after performing a pick-up process, a die bonding process is performed. Specifically, a semiconductor device is manufactured by adhering a semiconductor chip to a lead frame, a package board | substrate, etc. with the adhesive bond layer picked up with the chip C in a pick-up process.

이상으로부터, 점착 필름에 접착제층이 접합되어 수송ㆍ보관된 경우에, 접착제층이 공기 중의 수분을 흡수함으로써 연화되는 것을 저감시켜 픽업 미스의 발생을 억제할 수 있다.As described above, when the adhesive bond layer is bonded to the pressure-sensitive adhesive film and transported and stored, the adhesive layer can be softened by absorbing moisture in the air, and the occurrence of pickup miss can be suppressed.

이어서, 본 발명의 실시예에 대하여 설명하지만, 본 발명은 이들 실시예에 한정되는 것은 아니다.Next, although the Example of this invention is described, this invention is not limited to these Examples.

(점착 필름의 제조)(Production of Adhesive Film)

(점착 필름 1) (Adhesive film 1)

50℃에서 48시간, 미리 건조한 저밀도 폴리에틸렌(노바테크 LL(닛본 폴리에틸렌 가부시끼가이샤제, 상품명))을 용융하고, 압출기를 사용하여 두께 100㎛의 긴 필름 형상으로 기재 필름을 성형하였다. 용매인 톨루엔 400g 중에, n-부틸아크릴레이트 128g, 2-에틸헥실아크릴레이트 307g, 메틸메타크릴레이트 67g, 메타크릴산 1.5g, 중합 개시제로서 벤조일퍼옥시드의 혼합액을, 적절히 적하량을 조정하고, 반응 온도 및 반응 시간을 조정하여 관능기를 갖는 중합체 용액을 얻었다. 이어서 이 중합체 용액에, 방사선 경화성 탄소-탄소 이중 결합 및 관능기를 갖는 화합물로서, 별도로 메타크릴산과 에틸렌글리콜로부터 합성한 2-히드록시에틸메타크릴레이트 2.5g, 중합 금지제로서 히드로퀴논을 적절히 적하량을 조정하여 첨가하고, 반응 온도 및 반응 시간을 조정하여 방사선 경화성 탄소-탄소 이중 결합을 갖는 화합물 (A)의 용액을 얻었다. 계속해서, 화합물 (A) 용액 중의 화합물 (A) 100질량부에 대하여 폴리이소시아네이트(코로네이트 L(닛본 폴리우레탄사제, 상품명)) 1질량부를 첨가하고, 광중합 개시제(이르가큐어 184(닛본 시바 가이기사제, 상품명)) 0.5질량부, 용매로서 아세트산에틸 150질량부를 화합물 (A) 용액에 첨가하고 혼합하여, 방사선 경화성의 점착제 조성물을 제조하였다. 성형한 기재 필름 상에, 상기 점착제 조성물을 건조한 후의 막 두께가 10㎛로 되도록 도포 시공하고, 110℃에서 10분간 건조하여 점착 필름 1을 얻었다.The low-density polyethylene (Novatech LL (made by Nippon Polyethylene Co., Ltd., brand name)) previously dried at 50 degreeC was melt | dissolved, and the base film was shape | molded in the long film shape of thickness 100micrometer using the extruder. In 400 g of toluene which is a solvent, n-butyl acrylate 128g, 2-ethylhexyl acrylate 307g, methyl methacrylate 67g, methacrylic acid 1.5g, the liquid mixture of benzoyl peroxide as a polymerization initiator is adjusted suitably, Reaction temperature and reaction time were adjusted and the polymer solution which has a functional group was obtained. Subsequently, 2.5 g of 2-hydroxyethyl methacrylate synthesized from methacrylic acid and ethylene glycol as a compound having a radiation-curable carbon-carbon double bond and a functional group were added dropwise to the polymer solution as appropriate. It adjusted and added, reaction temperature and reaction time were adjusted, and the solution of the compound (A) which has a radiation curable carbon-carbon double bond was obtained. Subsequently, 1 mass part of polyisocyanate (Coronate L (made by Nippon Polyurethanes company, brand name)) is added with respect to 100 mass parts of compound (A) in a compound (A) solution, and a photoinitiator (irgacure 184 (Nipbon Shiba Kai) Article, brand name)) 0.5 parts by mass and 150 parts by mass of ethyl acetate as a solvent were added to the compound (A) solution and mixed to prepare a radiation curable pressure-sensitive adhesive composition. On the molded base film, it apply | coated so that the film thickness after drying the said adhesive composition might be set to 10 micrometers, and it dried at 110 degreeC for 10 minutes, and obtained the adhesive film 1.

(점착 필름 2)(Adhesive film 2)

저밀도 폴리에틸렌 대신에 고밀도 폴리에틸렌(노바테크 HD(닛본 폴리에틸렌 가부시끼가이샤제, 상품명))을 사용한 것 이외는, 점착 필름 1과 마찬가지로 하여 점착 필름 2를 얻었다.An adhesive film 2 was obtained in the same manner as the adhesive film 1 except that a high density polyethylene (Novatech HD (manufactured by Nippon Polyethylene Co., Ltd., brand name)) was used instead of the low density polyethylene.

(점착 필름 3) (Adhesive film 3)

기재 필름의 막 두께를 70㎛로 한 것 이외는, 점착 필름 2와 마찬가지로 하여 점착 필름 3을 얻었다.The adhesive film 3 was obtained like the adhesive film 2 except having set the film thickness of the base film to 70 micrometers.

(점착 필름 4) (Adhesive film 4)

기재 필름의 막 두께를 70㎛로 한 것 이외는, 점착 필름 1과 마찬가지로 하여 점착 필름 4를 얻었다.The adhesive film 4 was obtained like the adhesive film 1 except having set the film thickness of the base film to 70 micrometers.

(점착 필름 5)(Adhesive film 5)

저밀도 폴리에틸렌 대신에 EVA(노바테크 EVA(닛본 폴리에틸렌 가부시끼가이샤제, 상품명))를 사용한 것 이외는, 점착 필름 1과 마찬가지로 하여 점착 필름 5를 얻었다.An adhesive film 5 was obtained in the same manner as the adhesive film 1 except that EVA (Novatech EVA (Nippon Polyethylene Co., Ltd., brand name)) was used instead of the low density polyethylene.

(점착 필름 6)(Adhesive film 6)

저밀도 폴리에틸렌 대신에 폴리프로필렌(노바테크 PP(닛본 폴리프로 가부시끼가이샤제, 상품명))을 사용한 것 이외는, 점착 필름 1과 마찬가지로 하여 점착 필름 6을 얻었다.An adhesive film 6 was obtained in the same manner as the adhesive film 1 except that polypropylene (Novatech PP (Nippon Polypropylene Co., Ltd., brand name)) was used instead of the low density polyethylene.

(점착 필름 7)(Adhesive film 7)

저밀도 폴리에틸렌 대신에 폴리아미드(나일론 MXD6(미쯔비시 가스 가가꾸 가부시끼가이샤제, 상품명))를 사용한 것 이외는, 점착 필름 1과 마찬가지로 하여 점착 필름 7을 얻었다.The adhesive film 7 was obtained like the adhesive film 1 except having used polyamide (nylon MXD6 (Mitsubishi Gas Chemicals, make, brand name)) instead of the low density polyethylene.

(접착 필름의 조정) (Adjustment of adhesive film)

(접착 필름 1)(Adhesive film 1)

에폭시 수지로서 크레졸 노볼락형 에폭시 수지(에폭시 당량 197, 분자량 1200, 연화점 70℃) 15중량부, 아크릴 수지(질량 평균 분자량 : 80만, 유리 전이 온도 -17℃) 70중량부, 경화제로서 페놀 노볼락 수지(수산기 당량 104, 연화점 80℃) 15중량부, 촉진제로서 2-페닐이미다졸(큐어졸 2PZ(시꼬꾸 가세 가부시끼가이샤제, 상품명)) 1부를 유기 용제 중에서 교반하여 접착제 바니시를 얻었다. 얻어진 접착제 바니시를 두께 50㎛의 폴리에틸렌테레프탈레이트(PET) 필름 상에 도포하고, 120℃에서 10분간 가열 건조하여 접착 필름 1을 제작하였다.As an epoxy resin, 15 weight part of cresol novolak-type epoxy resins (epoxy equivalent 197, molecular weight 1200, softening point 70 degreeC), 70 weight part of acrylic resin (mass average molecular weight: 800,000, glass transition temperature -17 degreeC), and a phenol furnace as a hardening | curing agent 15 parts by weight of a volac resin (hydroxyl equivalent 104, softening point 80 ° C.) and 1 part of 2-phenylimidazole (curazole 2PZ (manufactured by Shikoku Chemical Co., Ltd.) as a promoter) were stirred in an organic solvent to obtain an adhesive varnish. . The obtained adhesive varnish was apply | coated on the 50-micrometer-thick polyethylene terephthalate (PET) film, and it heat-dried at 120 degreeC for 10 minutes, and produced the adhesive film 1.

(접착 필름 2)(Adhesive film 2)

에폭시 수지로서 크레졸 노볼락형 에폭시 수지(에폭시 당량 197, 분자량 1200, 연화점 70℃) 5중량부, 실란 커플링제로서 3-글리시독시프로필 트리메톡시실란 0.5질량부, 평균 입경 1.0㎛의 실리카 필러 50질량부, 아크릴 수지(질량 평균 분자량 : 80만, 유리 전이 온도 -17℃) 40질량부, 경화제로서 페놀 노볼락 수지(수산기 당량 104, 연화점 80℃) 5중량부, 촉진제로서 2-페닐이미다졸(큐어졸 2PZ(시꼬꾸 가세 가부시끼가이샤제, 상품명)) 1부를 유기 용제 중에서 교반하여 접착제 바니시를 얻었다. 얻어진 접착제 바니시를 두께 50㎛의 폴리에틸렌테레프탈레이트(PET) 필름 상에 도포하고, 120℃에서 10분간 가열 건조하여 접착 필름 2를 제작하였다.5 weight part of cresol novolak-type epoxy resins (epoxy equivalent 197, molecular weight 1200, softening point 70 degreeC) as an epoxy resin, 0.5 mass part of 3-glycidoxy propyl trimethoxysilane as a silane coupling agent, the silica filler of 1.0 micrometer of average particle diameters 50 mass parts, 40 weight part of acrylic resins (mass average molecular weight: 800,000, glass transition temperature -17 degreeC), 5 weight part of phenol novolak resins (hydroxyl equivalent 104, softening point 80 degreeC) as a hardening | curing agent, 2-phenyl as a promoter One part of midazole (curazole 2PZ (made by Shikoku Chemical Co., Ltd., brand name)) was stirred in the organic solvent, and the adhesive varnish was obtained. The obtained adhesive varnish was apply | coated on the polyethylene terephthalate (PET) film of 50 micrometers in thickness, heat-dried at 120 degreeC for 10 minutes, and the adhesive film 2 was produced.

(접착 필름 3)(Adhesive film 3)

아크릴 수지 대신에 2,2'-비스[4-(4-아미노페녹시)페닐]프로판, 3,3',4,4'-비페닐테트라카르복실산 이무수물 및 무수 피로멜리트산으로부터 합성된 질량 평균 분자량 5만의 폴리이미드 수지를 사용한 것 이외는, 접착 필름 2와 마찬가지로 제작하였다.Synthesized from 2,2'-bis [4- (4-aminophenoxy) phenyl] propane, 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride and pyromellitic anhydride instead of acrylic resin It produced like the adhesive film 2 except having used the polyimide resin of the mass mean molecular weight 50,000.

(접착 필름 4)(Adhesive film 4)

아크릴 수지 대신에 2,2'-비스[4-(4-아미노페녹시)페닐]프로판, 3,3',4,4'-비페닐테트라카르복실산 이무수물 및 무수 피로멜리트산으로부터 합성된 질량 평균 분자량 5만의 폴리이미드 수지를 사용한 것 이외는, 접착 필름 1과 마찬가지로 제작하였다.Synthesized from 2,2'-bis [4- (4-aminophenoxy) phenyl] propane, 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride and pyromellitic anhydride instead of acrylic resin It produced like the adhesive film 1 except having used the polyimide resin of the mass mean molecular weight 50,000.

(제1 실시예)(Embodiment 1)

점착 필름 1 내지 5 및 접착 필름 1을 각각 직경 370㎜, 320㎜의 원형으로 컷트하고, 점착 필름의 점착제층과 접착 필름의 접착제층을 접합하였다. 마지막으로, 접착 필름의 PET 필름을 접착제층으로부터 박리하여, 표 1의 조합의 다이싱ㆍ다이 본딩 필름(실시예 1 내지 3, 비교예 1 내지 2)을 얻었다.The adhesive films 1-5 and the adhesive film 1 were cut into the circular shape of diameter 370mm and 320mm, respectively, and the adhesive layer of the adhesive film and the adhesive bond layer of the adhesive film were bonded together. Finally, the PET film of the adhesive film was peeled from the adhesive layer to obtain a dicing die bonding film (Examples 1 to 3 and Comparative Examples 1 to 2) of the combination of Table 1.

<투습도> <Water vapor permeability>

점착 필름 1 내지 5에 대하여, JIS K7129-C(가스 크로마토그래프법에 의한 수증기 투과도 측정)에 기초하여 투습도를 측정하였다. 측정 조건은 온도 25±0.5℃, 상대 습도차 90±2％로 하였다. 그 결과를 표 1에 나타낸다.The water vapor permeability was measured about the adhesion films 1-5 based on JISK7129-C (water vapor permeability measurement by a gas chromatograph method). Measurement conditions were made into the temperature 25 +/- 0.5 degreeC, and the relative humidity difference 90 +/- 2%. The results are shown in Table 1.

Figure pct00002
Figure pct00002

<픽업성 시험> <Pickup Test>

상기 실시예 1 내지 3, 비교예 1 내지 2에 따른 다이싱ㆍ다이 본딩 필름을 300장씩 겹치고, 72시간, 온도 25도, 습도 70％ RH의 분위기 중에 방치한 후, 각각 위로부터 10장째의 다이싱 다이 본드 필름을 두께 100㎛ 및 75㎛의 웨이퍼에 70℃에서 10초간 가열하여 접합한 후, 10×10㎜로 다이싱하였다. 그 후, 점착제층에 자외선을 공냉식 고압 수은등에 의해 200mJ/㎠ 조사한 후, 웨이퍼 중앙부의 칩 250개에 대하여 다이 본더 장치(CPS-100FM(NEC 머시너리 가부시끼가이샤제, 상품명))에 의한 픽업 시험을 행하였다. 점착제층으로부터 박리된 접착제층이 유지된 칩이, 인접하는 칩이 부수하지 않고 픽업된 경우를 픽업이 성공한 것으로 하고, 픽업 성공률이 99％ 이상이면 양호로서 판정하여 ○표로 표시하고, 99％ 미만인 경우는 불량으로 판정하여 ×표로 표시하였다. 이들 결과를 표 2에 나타낸다.After laminating 300 sheets of dicing die bonding films according to Examples 1 to 3 and Comparative Examples 1 and 2, and leaving them in an atmosphere of temperature 25 ° C and humidity 70% RH for 72 hours, the dies of the tenth sheet from the top were respectively The thin die bond film was bonded to a wafer having a thickness of 100 μm and 75 μm by heating at 70 ° C. for 10 seconds, and then diced into 10 × 10 mm. Thereafter, the adhesive layer was irradiated with ultraviolet rays at 200 mJ / cm 2 with an air-cooled high pressure mercury lamp, and then a pickup test using a die bonder (CPS-100FM (manufactured by NEC Machinery Co., Ltd.)) on 250 chips in the center of the wafer. Was performed. When the chip | tip in which the adhesive bond layer peeled from the adhesive layer was hold | maintained and the adjacent chip | tip was picked up without being destroyed, it was considered that pick-up succeeded. When the pick-up success rate is 99% or more, it is judged as favorable and is shown by the mark, and it is less than 99%. Was determined to be defective and indicated by a X mark. These results are shown in Table 2.

Figure pct00003
Figure pct00003

비교예 1 내지 2에서는, 점착 필름의 투습도가 10.0g/㎡/day를 초과하고 있기 때문에, 공기 중의 수증기가 외측으로부터 내측으로 투과하여 접착제층이 흡수함으로써 연화되어, 다이싱 시에 수염 형상의 절삭칩이 발생하여, 더블 다이에 의한 픽업 미스가 다발하였다. 이에 반하여, 실시예 1 내지 3에서는, 점착 필름의 투습도가 10.0g/㎡/day 이하이어서, 공기 중의 수증기가 투과하기 어려워, 접착제층의 연화가 저감되어 있기 때문에, 다이싱 시의 수염 형상의 절삭칩의 발생이 저감되어, 픽업 미스가 충분히 감소하였다.In Comparative Examples 1-2, since the water vapor transmission rate of the adhesive film exceeds 10.0 g / m <2> / day, water vapor in air permeates from the outside to the inside, softens by absorbing an adhesive bond layer, and cuts in the shape of a beard at the time of dicing. The chip | tip generate | occur | produced and the pick-up miss by a double die was frequent. In contrast, in Examples 1 to 3, the moisture permeability of the pressure-sensitive adhesive film was 10.0 g / m 2 / day or less, and water vapor in the air was difficult to permeate, and softening of the adhesive layer was reduced. The generation of chips was reduced, and pickup misses were sufficiently reduced.

(제2 실시예)(Second Embodiment)

점착 필름 1, 6 내지 7 및 접착 필름 1 내지 4를 각각 직경 370㎜, 320㎜의 원형으로 컷트하고, 점착 필름의 점착제층과 접착 필름의 접착제층을 접합하였다. 마지막으로, 접착 필름의 PET 필름을 접착제층으로부터 박리하여, 표 3의 조합의 다이싱ㆍ다이 본딩 필름(실시예 4 내지 7, 비교예 3 내지 4)을 얻었다. 점착 필름 1, 6 내지 7에 대하여, 제1 실시예와 마찬가지로 투습도 시험을 행하여, 모든 점착 필름에 대하여 투습도가 10.0g/㎡/day 이하인 것을 확인하였다.The adhesive films 1, 6-7 and the adhesive films 1-4 were cut into the circular shape of diameter 370mm and 320mm, respectively, and the adhesive layer of the adhesive film and the adhesive bond layer of the adhesive film were bonded together. Finally, the PET film of the adhesive film was peeled from the adhesive layer to obtain a dicing die bonding film (Examples 4 to 7, Comparative Examples 3 to 4) of the combination of Table 3. The water vapor permeability test was done about the adhesive films 1 and 6-7 similarly to Example 1, and it confirmed that the water vapor transmission rate was 10.0 g / m <2> / day or less with respect to all the adhesive films.

<흡수율> <Absorption rate>

상기 실시예 4 내지 7, 비교예 3 내지 4에 따른 다이싱ㆍ다이 본딩 필름을, 50㎜×50㎜의 크기로 잘라내어 샘플로 하였다. 이 샘플을 50℃의 오븐에서 24시간 건조시킨 것을, 데시케이터에서 실온까지 냉각하여 중량을 측정하였다. 그 후, 23±1.0℃의 증류수 중에 샘플을 24시간 침지하고, 취출하여 칼피셔 수분계에 의해 흡수율을 산출하였다. 그 결과를 표 3에 나타낸다.The dicing die bonding film which concerns on the said Examples 4-7 and Comparative Examples 3-4 was cut out to the magnitude | size of 50 mm x 50 mm, and it was set as the sample. What dried this sample in 50 degreeC oven for 24 hours was cooled to room temperature by the desiccator, and weighed. Thereafter, the sample was immersed in distilled water at 23 ± 1.0 ° C. for 24 hours, taken out, and the absorption rate was calculated by a Karl Fischer moisture meter. The results are shown in Table 3.

Figure pct00004
Figure pct00004

<픽업성 시험><Pickup Test>

실시예 1, 4 내지 6, 비교예 3 내지 4에 따른 다이싱ㆍ다이 본딩 필름에 대하여, 상술한 제1 실시예와 마찬가지로 픽업 시험을 행하였다. 단, 웨이퍼의 두께는 100㎛ 및 50㎛로 하였다. 픽업된 칩에 점착제층으로부터 박리된 접착 필름이 유지되어 있는 것을 픽업이 성공한 것으로 하고, 픽업 성공률이 99％ 이상이면 양호로서 판정하여 ○표로 표시하고, 99％ 미만인 경우는 불량으로 판정하여 ×표로 표시하였다. 이들 결과를 표 4에 나타낸다.The pick-up test was done about Example 1, 4-6, and the dicing die bonding film concerning Comparative Examples 3-4 similarly to 1st Example mentioned above. However, the thickness of the wafer was 100 µm and 50 µm. The pick-up succeeded that the adhesive film peeled from the pressure-sensitive adhesive layer was held on the picked-up chip, and if the pick-up success rate was 99% or more, it was judged as good and indicated by a ○ mark, and when it was less than 99%, it was judged as bad and indicated by a x mark. It was. These results are shown in Table 4.

Figure pct00005
Figure pct00005

비교예 3 내지 4는, 점착 필름의 투습도가 10.0g/㎡/day 이하이기 때문에, 두께가 100㎛인 웨이퍼에 대해서는 양호하게 픽업할 수 있었지만, 점착 필름과 접착제층을 합한 흡수율이 2.0체적％를 초과하고 있기 때문에, 점착제층과 접착제층 사이의 박리성이 나빠 두께가 50㎛인 웨이퍼에 대해서는 픽업 미스가 다발하였다. 이에 반해, 실시예 4 내지 7에서는, 점착 필름과 접착제층을 합한 흡수율이 2.0체적％ 이하로, 점착제층과 접착제층 사이의 박리성이 좋기 때문에, 두께가 50㎛로 얇은 웨이퍼에 대해서도 픽업 미스가 충분히 감소하였다.In Comparative Examples 3 to 4, the moisture permeability of the pressure-sensitive adhesive film was 10.0 g / m 2 / day or less, so that the wafer 100 mm in thickness could be picked up satisfactorily, but the water absorption ratio of the pressure-sensitive adhesive film and the adhesive layer was 2.0% by volume. Since it was exceeding, the peelability between the adhesive layer and an adhesive bond layer was bad, and pick-up misses bunched about the wafer with a thickness of 50 micrometers. On the other hand, in Examples 4-7, since the absorptivity which combined the adhesive film and an adhesive bond layer is 2.0 volume% or less, and the peelability between an adhesive layer and an adhesive bond layer is good, pick-up miss is also carried out for the thin wafer with a thickness of 50 micrometers. It was sufficiently reduced.

11 : 기재 필름
12 : 점착제층
13 : 접착제층
14 : 점착 필름
15 : 반도체 웨이퍼 가공용 테이프
20 : 링 프레임
21 : 스테이지
22 : 흡착 스테이지
23 : 밀어올림 부재11: base film
12: pressure-sensitive adhesive layer
13: adhesive layer
14: adhesive film
15: Tape for Semiconductor Wafer Processing
20: ring frame
21: stage
22: adsorption stage
23: lifting member

Claims (3)

기재 필름과 상기 기재 필름 상에 형성된 점착제층을 포함하여 이루어지는 점착 필름이며, 투습도가 10.0g/㎡/day 이하인 것을 특징으로 하는 점착 필름.A pressure-sensitive adhesive film comprising a base film and a pressure-sensitive adhesive layer formed on the base film, wherein the moisture permeability is 10.0 g / m 2 / day or less. 기재 필름과 상기 기재 필름 상에 형성된 점착제층을 포함하여 이루어지는 점착 필름과, 상기 점착제층 상에 형성된 접착제층을 갖는 웨이퍼 가공용 테이프이며, 상기 점착 필름의 투습도가 10.0g/㎡/day 이하인 것을 특징으로 하는 반도체 웨이퍼 가공용 테이프.It is a tape for wafer processing which has an adhesive film which consists of a base film and the adhesive layer formed on the said base film, and the adhesive bond layer formed on the said adhesive layer, and the water vapor transmission rate of the said adhesive film is 10.0g / m <2> / day or less, It is characterized by the above-mentioned. Tape for semiconductor wafer processing. 제2항에 있어서,
상기 점착 필름과 상기 접착제층을 합한 흡수율이 2.0체적％ 이하인 것을 특징으로 하는 반도체 웨이퍼 가공용 테이프.3. The method of claim 2,
The absorption rate which combined the said adhesive film and the said adhesive bond layer is 2.0 volume% or less, The tape for a semiconductor wafer process characterized by the above-mentioned.
KR1020137012090A 2010-11-11 2010-11-11 Adhesive film and tape for semiconductor wafer processing KR101602025B1 (en)

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JP2003238911A (en) * 2002-02-15 2003-08-27 Nitto Denko Corp Moistureproof transparent adhesive tape
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WO2009063793A1 (en) * 2007-11-15 2009-05-22 The Furukawa Electric Co., Ltd. Adhesive tape for processing semiconductor wafer
JP2010163577A (en) * 2009-01-19 2010-07-29 Furukawa Electric Co Ltd:The Roll core and wafer processing tape wound around the roll core
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