WO2012063343A1 - Adhesive film and tape for semiconductor wafer processing - Google Patents

Adhesive film and tape for semiconductor wafer processing Download PDF

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Publication number
WO2012063343A1
WO2012063343A1 PCT/JP2010/070072 JP2010070072W WO2012063343A1 WO 2012063343 A1 WO2012063343 A1 WO 2012063343A1 JP 2010070072 W JP2010070072 W JP 2010070072W WO 2012063343 A1 WO2012063343 A1 WO 2012063343A1
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Prior art keywords
adhesive layer
film
pressure
adhesive film
adhesive
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PCT/JP2010/070072
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French (fr)
Japanese (ja)
Inventor
真沙美 青山
石渡　伸一
泰正 盛島
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古河電気工業株式会社
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Application filed by 古河電気工業株式会社 filed Critical 古河電気工業株式会社
Priority to KR1020137012090A priority Critical patent/KR101602025B1/en
Priority to PCT/JP2010/070072 priority patent/WO2012063343A1/en
Priority to CN2010800698742A priority patent/CN103189459A/en
Publication of WO2012063343A1 publication Critical patent/WO2012063343A1/en

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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Definitions

  • the present invention relates to an adhesive film and a semiconductor wafer processing tape used to manufacture a semiconductor device by cutting a semiconductor wafer into semiconductor chips.
  • the semiconductor wafer processing tape is cut (diced) into chips using a dicing blade, the semiconductor wafer processing tape is expanded, A step of picking up the cut chip together with the adhesive layer from the pressure-sensitive adhesive layer, and a step of mounting the chip on a substrate or the like via the adhesive layer attached to the chip are performed.
  • the adhesive layer becomes soft by absorbing moisture in the air during transportation or storage, and the machinability may be reduced.
  • whisker-like cutting waste is generated at the time of dicing, and these cutting wastes are diced together with the cutting waste of the base film or the adhesive layer and fused between adjacent chips.
  • a pickup error double die
  • an object of the present invention is to provide a pressure-sensitive adhesive film and a semiconductor wafer processing tape capable of reducing the softening of the adhesive layer by absorbing moisture in the air and suppressing the occurrence of pickup errors. It is in.
  • the pressure-sensitive adhesive film of the present invention is a pressure-sensitive adhesive film comprising a base film and a pressure-sensitive adhesive layer provided on the base film, and has a moisture permeability of 10.0 g / m 2 / day. It is characterized by the following.
  • the semiconductor wafer processing tape of the present invention has a pressure-sensitive adhesive film comprising a base film and a pressure-sensitive adhesive layer provided on the base film, and an adhesive layer provided on the pressure-sensitive adhesive layer. It is a tape for wafer processing,
  • the moisture permeability of the said adhesive film is 10.0 g / m ⁇ 2 > / day or less, It is characterized by the above-mentioned.
  • the water absorption rate of the adhesive film and the adhesive layer is 2.0% by volume or less.
  • the pressure-sensitive adhesive film and semiconductor wafer processing tape of the present invention reduce the softening of the adhesive layer by absorbing moisture in the air when the adhesive layer is bonded to the pressure-sensitive adhesive film and transported and stored. The occurrence of pick-up mistakes can be suppressed.
  • FIG. 1 It is sectional drawing which shows an example of the tape for semiconductor wafer processing of this invention.
  • A is sectional drawing which shows the state by which the semiconductor wafer W and the ring frame were bonded together on the semiconductor wafer processing tape
  • (b) is sectional drawing which shows the semiconductor wafer processing tape and semiconductor wafer after dicing
  • (C) is a sectional view showing a semiconductor wafer processing tape and a semiconductor wafer after expansion.
  • the semiconductor wafer processing tape 15 has an adhesive film 14 in which an adhesive layer 12 is laminated on a base film 11. It is a dicing die bonding film in which an adhesive layer 13 is laminated.
  • the pressure-sensitive adhesive layer 12 and the adhesive layer 13 may be cut (pre-cut) into a predetermined shape in advance according to the use process and the apparatus.
  • the adhesive layer 13 pre-cut according to the wafer W see FIG. 2A
  • the adhesive layer 13 is present at the portion where the wafer W is bonded, and the ring frame 20 for dicing (FIG. 2).
  • the semiconductor wafer processing tape 15 of the present invention includes a form in which the wafer is cut and laminated for each wafer, and a form in which a plurality of long sheets formed by winding the wafer are wound into a roll. Below, the base film 11, the adhesive layer 12, and the adhesive layer 13 are each demonstrated in detail.
  • Base film Although it does not specifically limit as a material which comprises a base film, It is preferable to be selected from polyolefin and polyvinyl chloride.
  • polystyrene resin examples include polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-acrylic acid.
  • polystyrene resin examples include polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-acrylic acid.
  • ⁇ -olefins examples include homopolymers or copolymers of ⁇ -olefins such as methyl copolymers, ethylene-acrylic acid copolymers, and ionomers, or mixtures thereof.
  • the substrate film is preferably radiation transmissive.
  • the thickness of the base film is preferably 50 to 300 ⁇ m from the viewpoint of ensuring strength and chip pick-up properties.
  • the base film may be a single layer or may be composed of a plurality of layers.
  • the pressure-sensitive adhesive layer can be produced by applying a pressure-sensitive adhesive on the base film.
  • the pressure-sensitive adhesive layer is not particularly limited as long as it has a property that the adhesive layer and the semiconductor wafer do not peel off during expansion, and a property that makes it easy to peel off the adhesive layer during pick-up. .
  • the pressure-sensitive adhesive layer is preferably radiation-curable.
  • chlorinated polypropylene resins acrylic resins, polyester resins, polyurethane resins, epoxy resins, addition reaction type organopolysiloxane resins, silicon acrylate resins, ethylene-vinyl acetate copolymers, ethylene- Radiation polymerization of ethyl acrylate copolymer, ethylene-methyl acrylate copolymer, ethylene-acrylic acid copolymer, various elastomers such as polyisoprene, styrene / butadiene copolymer and hydrogenated products, and mixtures thereof It is preferable to prepare a pressure-sensitive adhesive by appropriately mixing an adhesive compound. Various surfactants and surface smoothing agents may be added.
  • the thickness of the pressure-sensitive adhesive layer is not particularly limited and may be appropriately set, but is preferably 1 to 30 ⁇ m.
  • the polymerizable compound is, for example, a low molecular weight compound having at least two photopolymerizable carbon-carbon double bonds in a molecule that can be three-dimensionally reticulated by light irradiation, or a photopolymerizable carbon-carbon double bond group as a substituent.
  • acrylate, polyethylene glycol diacrylate, oligoester acrylate, silicon acrylate, etc., acrylic acid, copolymers of various acrylic esters, and the like are applicable.
  • Urethane acrylate oligomers include polyester compounds or polyether compounds such as polyol compounds and polyisocyanate compounds (for example, 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diene).
  • the pressure-sensitive adhesive layer may be a mixture of two or more selected from the above resins.
  • the above-mentioned pressure-sensitive adhesive materials have a molecular structure with as many nonpolar groups as possible, such as a trifluoromethyl group, a dimethylsilyl group, and a long-chain alkyl group, with a surface free energy of 40 mJ / m 2 or less. It is desirable to include.
  • the resin for the pressure-sensitive adhesive layer contains, as appropriate, an acrylic pressure-sensitive adhesive, a photopolymerization initiator, a curing agent, etc. in addition to the radiation polymerizable compound that cures the pressure-sensitive adhesive layer by irradiating the base film with radiation.
  • An adhesive can also be prepared.
  • photopolymerization initiator for example, isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, benzyldimethyl ketal, ⁇ -hydroxycyclohexyl phenyl ketone, 2-hydroxymethylphenyl Propane or the like can be used.
  • the blending amount of these photopolymerization initiators is preferably 0.01 to 30 parts by weight, more preferably 1 to 10 parts by weight with respect to 100 parts by weight of the acrylic copolymer.
  • the gel fraction is desirably high and is usually 60% or more, preferably 70% or more.
  • the moisture permeability of the adhesive film is 10.0 g / m 2 / day or less.
  • the semiconductor wafer processing tape is cut and laminated for each wafer, or a long sheet is used.
  • whiskers-like cutting waste during dicing is reduced, and these cutting wastes are diced together with the cutting waste of the base film and the adhesive layer and fused between adjacent chips, and pickup errors are caused during pickup.
  • production can be suppressed.
  • a polymer having a low moisture permeability such as polyethylene, polypropylene, polyethylene naphthalate may be used as the polymer used for the base film.
  • the water vapor transmission rate of an adhesive film can also be reduced by enlarging the thickness of a base film.
  • the thickness of the adhesive layer is preferably increased.
  • the moisture permeability can be lowered by increasing the crosslink density of the pressure-sensitive adhesive layer. In order to reduce the crosslinking density, the amount of the curing agent is increased, or a polymer having many hydroxyl groups may be used in the pressure-sensitive adhesive layer.
  • ⁇ Adhesive layer> When the chip is picked up after the semiconductor wafer is bonded and cut, the adhesive layer is peeled off from the adhesive layer and attached to the chip, and the chip is attached to the package substrate or lead frame. It functions as a bonding film when it is fixed to.
  • the adhesive layer is a film in which an adhesive is formed in advance.
  • the acrylic copolymer and the epoxy resin are included, and the acrylic copolymer has a Tg of 10 ° C. or higher.
  • the adhesive layer is not particularly limited, but is usually preferably about 5 to 100 ⁇ m.
  • the epoxy resin is not particularly limited as long as it cures and exhibits an adhesive action, but an epoxy resin having two or more functional groups, preferably having a molecular weight of less than 5000, more preferably less than 3000 can be used. Further, an epoxy resin having a molecular weight of preferably 500 or more, more preferably 800 or more can be used.
  • bisphenol A type epoxy resin bisphenol F type epoxy resin, bisphenol S type epoxy resin, alicyclic epoxy resin, aliphatic chain epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol A novolak type epoxy Resin, diglycidyl etherified product of biphenol, diglycidyl etherified product of naphthalenediol, diglycidyl etherified product of phenol, diglycidyl etherified product of alcohol, and alkyl-substituted products, halides, hydrogenated products, etc. And a novolak-type epoxy resin.
  • a polyfunctional epoxy resin and a heterocyclic ring-containing epoxy resin can also be applied. These can be used alone or in combination of two or more.
  • components other than the epoxy resin may be included as impurities within a range that does not impair the characteristics.
  • an epoxy group-containing acrylic copolymer for example, an epoxy group-containing acrylic copolymer can be used.
  • the epoxy group-containing acrylic copolymer contains 0.5 to 6% by weight of glycidyl acrylate or glycidyl methacrylate having an epoxy group. In order to obtain a high adhesive strength, 0.5% by weight or more is preferable, and gelation can be suppressed if it is 6% by weight or less.
  • the amount of glycidyl acrylate or glycidyl methacrylate used as the functional group monomer is a copolymer ratio of 0.5 to 6% by weight. That is, in the present invention, the epoxy group-containing acrylic copolymer refers to a copolymer obtained by using glycidyl acrylate or glycidyl methacrylate as a raw material in an amount of 0.5 to 6% by weight based on the obtained copolymer. .
  • the remainder can be a mixture of an alkyl acrylate having 1 to 8 carbon atoms such as methyl acrylate or methyl methacrylate, an alkyl methacrylate, and styrene or acrylonitrile.
  • ethyl (meth) acrylate and / or butyl (meth) acrylate are particularly preferable.
  • the mixing ratio is preferably adjusted in consideration of the Tg of the copolymer.
  • limiting in particular in a polymerization method For example, pearl polymerization, solution polymerization, etc. are mentioned, A copolymer is obtained by these methods.
  • the weight average molecular weight of the epoxy group-containing acrylic copolymer is 100,000 or more, and if it is in this range, the adhesiveness and heat resistance are high, preferably 300,000 to 3,000,000, and 500,000 to 2,000,000. Is more preferable.
  • a weight average molecular weight is a polystyrene conversion value using the calibration curve by a standard polystyrene by the gel permeation chromatography method (GPC).
  • the inorganic filler there are no particular restrictions on the inorganic filler.
  • examples thereof include boron, crystalline silica, and amorphous silica. These may be used alone or in combination of two or more.
  • aluminum oxide, aluminum nitride, boron nitride, crystalline silica, amorphous silica and the like are preferable.
  • Silica is preferable from the viewpoint of balance of properties.
  • the average particle size of the filler is preferably 0.002 to 2 ⁇ m, more preferably 0.008 to 0.5 ⁇ m, and still more preferably 0.01 to 0.05 ⁇ m. If the average particle size of the filler is less than 0.002 ⁇ m, the wettability to the adherend tends to decrease, and the adhesion tends to decrease. If the average particle size exceeds 2 ⁇ m, the reinforcing effect due to the addition of the filler decreases and the heat resistance decreases. Tend to.
  • the average particle diameter means an average value obtained from the particle diameters of 100 fillers measured by TEM, SEM or the like.
  • the semiconductor wafer processing tape preferably has a water absorption rate of 2.0% by volume or less in combination with the pressure-sensitive adhesive film and the adhesive layer.
  • the semiconductor chip is pushed up from the lower side of the wafer processing tape by a pin and the push-up force or push-up height is increased.
  • the semiconductor chip tends to be thin, and if the semiconductor chip is thin and the push-up force is increased, the chip is damaged.
  • the adhesive layer softens and adheres with the pressure-sensitive adhesive layer during cutting, or moisture absorbed by the pressure-sensitive adhesive film Since it can transfer to an adhesive bond layer and it can reduce that both adhere, the peelability between an adhesive layer and an adhesive bond layer becomes good. For this reason, since it is not necessary to increase the push-up force by the pin, even when the semiconductor chip is thin, it can be picked up satisfactorily.
  • a polymer having a low water absorption rate such as polypropylene or polyethylene, may be used as the polymer used for the base film.
  • a water absorption can also be reduced by making the thickness of a base film small.
  • the pressure-sensitive adhesive layer reduces the water absorption rate by reducing the number of functional groups such as hydroxy, amino, sulfo, and carboxyl, amide bonds, and ether bonds, and increasing the amount of methyl and aryl groups introduced. Can be made.
  • a water absorption can also be reduced by using a polymer with low water absorption, such as an acryl, for an adhesive bond layer.
  • a water absorption rate can also be reduced by using a thing with low molecular weight. Furthermore, the water absorption can also be lowered by reducing the amount of the inorganic filler contained in the adhesive layer.
  • the wafer processing tape 15 is sucked and supported from the surface of the base film 11 by the suction stage 22, and the semiconductor wafer W is mechanically cut using a blade (not shown) and divided into a plurality of semiconductor chips C (FIG. 2). (B)).
  • the adhesive layer 13, the pressure-sensitive adhesive layer 12, and a part of the base film 11 are also appropriately diced.
  • the moisture permeability of the pressure-sensitive adhesive film is 10.0 g / m 2 / day or less, water vapor in the air hardly permeates from the outside to the inside during transportation and storage of the semiconductor wafer processing tape, and the adhesive layer Since the softening of is reduced, the generation of beard-like cutting waste is reduced.
  • the pressure-sensitive adhesive layer 12 is cured by irradiating the pressure-sensitive adhesive layer 12 with radiation from the lower surface of the base film 11. Since the adhesive force of the cured adhesive layer 12 is reduced, the adhesive layer 13 on the adhesive layer 12 can be peeled off.
  • the pressure-sensitive adhesive layer is composed of a plurality of layers, it is not necessary to cure the entire pressure-sensitive adhesive layer in order to peel the adhesive layer 13 from the pressure-sensitive adhesive layer 12, and at least the pressure-sensitive adhesive layer portion corresponding to the wafer is formed. It may be cured.
  • the semiconductor wafer processing tape 15 holding the plurality of divided semiconductor chips C is placed on the stage 21 of the expanding apparatus. Then, as shown in FIG. 2C, the hollow cylindrical push-up member 23 is raised from the lower surface side of the semiconductor wafer processing tape 15, and the adhesive film 14 is stretched in the radial direction and the circumferential direction of the ring frame 20. .
  • the pick-up process which picks up the chip
  • the dicing process since the generation of the beard-like cutting debris of the adhesive layer 13 is reduced, these cutting debris is fused between adjacent chips together with the cutting debris of the base film 11 and the pressure-sensitive adhesive layer 12, and the pickup is performed. The occurrence of mistakes can be suppressed. Further, when the water absorption rate of the pressure-sensitive adhesive film 14 and the adhesive layer 13 is 2.0% by volume or less, the adhesive layer 12 and the adhesive layer 13 are easily peeled off. Even when the thickness of C is thin, it is picked up well.
  • a semiconductor device is manufactured by bonding a semiconductor chip to a lead frame, a package substrate, or the like by an adhesive layer picked up together with the chip C in a pickup process.
  • the adhesive layer when the adhesive layer is bonded to the adhesive film and transported / stored, the adhesive layer can be prevented from being softened by absorbing moisture in the air, and the occurrence of pickup errors can be suppressed. it can.
  • Adhesive film 1 Low-density polyethylene (Novatech LL (manufactured by Nippon Polyethylene Co., Ltd., trade name)) previously dried at 50 ° C. was melted for 48 hours, and a base film was formed into a long film having a thickness of 100 ⁇ m using an extruder. .
  • Adhesive film 2 An adhesive film 2 was obtained in the same manner as the adhesive film 1 except that high-density polyethylene (Novatech HD (manufactured by Nippon Polyethylene Co., Ltd., trade name)) was used instead of the low-density polyethylene.
  • Adhesive film 3 An adhesive film 3 was obtained in the same manner as the adhesive film 2 except that the film thickness of the base film was set to 70 ⁇ m.
  • Adhesive film 4 An adhesive film 4 was obtained in the same manner as the adhesive film 1 except that the film thickness of the base film was set to 70 ⁇ m.
  • Adhesive film 5 An adhesive film 5 was obtained in the same manner as the adhesive film 1 except that EVA (Novatech EVA (manufactured by Nippon Polyethylene Co., Ltd., trade name)) was used instead of the low density polyethylene.
  • Adhesive film 6 An adhesive film 6 was obtained in the same manner as the adhesive film 1 except that polypropylene (Novatec PP (trade name, manufactured by Nippon Polypro Co., Ltd.)) was used instead of the low density polyethylene.
  • Adhesive film 7 An adhesive film 7 was obtained in the same manner as the adhesive film 1 except that polyamide (nylon MXD6 (trade name, manufactured by Mitsubishi Gas Chemical Co., Ltd.)) was used instead of the low density polyethylene.
  • Adhesive film 1 15 parts by weight of a cresol novolac type epoxy resin (epoxy equivalent 197, molecular weight 1200, softening point 70 ° C.) as an epoxy resin, 70 parts by weight of an acrylic resin (mass average molecular weight: 800,000, glass transition temperature ⁇ 17 ° C.), phenol as a curing agent 15 parts by weight of a novolak resin (hydroxyl equivalent 104, softening point 80 ° C.) and 1 part of 2-phenylimidazole (Curazole 2PZ (trade name, manufactured by Shikoku Kasei Co., Ltd.)) as an accelerator are stirred in an organic solvent to form an adhesive varnish. Obtained.
  • a cresol novolac type epoxy resin epoxy equivalent 197, molecular weight 1200, softening point 70 ° C.
  • an acrylic resin mass average molecular weight: 800,000, glass transition temperature ⁇ 17 ° C.
  • phenol as a curing agent
  • phenol hydroxyl
  • the obtained adhesive varnish was applied onto a polyethylene terephthalate (PET) film having a thickness of 50 ⁇ m and dried by heating at 120 ° C. for 10 minutes to produce an adhesive film 1.
  • PET polyethylene terephthalate
  • Adhesive film 2 5 parts by weight of a cresol novolac type epoxy resin (epoxy equivalent 197, molecular weight 1200, softening point 70 ° C.) as an epoxy resin, 0.5 part by mass of 3-glycidoxypropyltrimethoxysilane as an silane coupling agent, an average particle size of 1.
  • Adhesive film 3 Synthesized from 2,2'-bis [4- (4-aminophenoxy) phenyl] propane, 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride and pyromellitic anhydride instead of acrylic resin It was produced in the same manner as the adhesive film 2 except that a polyimide resin having a mass average molecular weight of 50,000 was used.
  • Adhesive film 4 Synthesized from 2,2'-bis [4- (4-aminophenoxy) phenyl] propane, 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride and pyromellitic anhydride instead of acrylic resin It was produced in the same manner as the adhesive film 1 except that a polyimide resin having a mass average molecular weight of 50,000 was used.
  • the dicing die-bonding film was bonded to a wafer having a thickness of 100 ⁇ m and 75 ⁇ m by heating at 70 ° C. for 10 seconds, and then diced to 10 ⁇ 10 mm.
  • the adhesive layer was irradiated with ultraviolet rays of 200 mJ / cm 2 with an air-cooled high-pressure mercury lamp, and then a pick-up test for 250 chips in the center of the wafer using a die bonder device (CPS-100FM (trade name, manufactured by NEC Machinery Co., Ltd.)). Went. If the chip with the adhesive layer peeled off from the adhesive layer was picked up without an adjacent chip attached, the pickup was considered successful, and if the pickup success rate was 99% or more, it was judged as good. When it was less than 99%, it was judged as bad and represented by x. These results are shown in Table 2.
  • the pressure-sensitive adhesive films 1, 6 to 7 and the adhesive films 1 to 4 were cut into circles having a diameter of 370 mm and 320 mm, respectively, and the pressure-sensitive adhesive layer of the pressure-sensitive adhesive film and the adhesive layer of the adhesive film were bonded together. Finally, the PET film of the adhesive film was peeled from the adhesive layer to obtain dicing die bonding films (Examples 4 to 7 and Comparative Examples 3 to 4) having combinations shown in Table 3.
  • the adhesive films 1 and 6 to 7 were subjected to a moisture permeability test in the same manner as in the first example, and it was confirmed that the moisture permeability of all the adhesive films was 10.0 g / m 2 / day or less.
  • ⁇ Pickup test> The dicing die bonding films according to Examples 1, 4 to 6 and Comparative Examples 3 to 4 were subjected to a pickup test in the same manner as in the first example. However, the thickness of the wafer was 100 ⁇ m and 50 ⁇ m. If the picked-up chip holds the adhesive film peeled off from the adhesive layer, the pick-up is considered successful, and if the pick-up success rate is 99% or more, it is judged as good and is indicated by ⁇ , and less than 99% In the case of, it was determined to be defective and indicated by x. These results are shown in Table 4.
  • Base film 12 Adhesive layer 13: Adhesive layer 14: Adhesive film 15: Semiconductor wafer processing tape 20: Ring frame 21: Stage 22: Adsorption stage 23: Push-up member

Abstract

Provided are an adhesive film and a tape for semiconductor wafer processing, which are reduced in softening of a bonding agent layer due to the absorption of moisture in the air and are thus capable of suppressing the occurrence of pick up failure. This adhesive film is composed of a base film and an adhesive layer that is provided on the base film, and has a water vapor permeability of 10.0 g/m2/day or less. This tape for semiconductor wafer processing comprises an adhesive film, which is composed of a base film and an adhesive layer that is provided on the base film, and a bonding agent layer that is formed on the adhesive layer, and the adhesive film has a water vapor permeability of 10.0 g/m2/day or less.

Description

粘着フィルム及び半導体ウエハ加工用テープAdhesive film and tape for semiconductor wafer processing
　本発明は、半導体ウエハを半導体チップに切断し、半導体装置を製造するために使用する粘着フィルム及び半導体ウエハ加工用テープに関する。 The present invention relates to an adhesive film and a semiconductor wafer processing tape used to manufacture a semiconductor device by cutting a semiconductor wafer into semiconductor chips.
　半導体装置の製造工程に使用される半導体ウエハ加工用テープとして、粘着フィルム（ダイシングテープ）に、接着剤層（ダイボンディングフィルム）が積層された構造を有する半導体ウエハ加工用テープが提案され（例えば、特許文献１参照）、既に実用化されている。 As a semiconductor wafer processing tape used in the manufacturing process of a semiconductor device, a semiconductor wafer processing tape having a structure in which an adhesive layer (die bonding film) is laminated on an adhesive film (dicing tape) has been proposed (for example, Has already been put into practical use.
　半導体装置の製造工程では、半導体ウエハに半導体ウエハ加工用テープを貼り付けた後、半導体ウエハをダイシングブレードを用いてチップ単位に切断（ダイシング）する工程、半導体ウエハ加工用テープをエキスパンドする工程、さらに切断されたチップを接着剤層とともに粘着剤層からピックアップする工程、チップに付着した接着剤層を介してチップを基板等に実装する工程が実施される。 In the manufacturing process of a semiconductor device, after a semiconductor wafer processing tape is attached to a semiconductor wafer, the semiconductor wafer is cut (diced) into chips using a dicing blade, the semiconductor wafer processing tape is expanded, A step of picking up the cut chip together with the adhesive layer from the pressure-sensitive adhesive layer, and a step of mounting the chip on a substrate or the like via the adhesive layer attached to the chip are performed.
特開平０２－３２１８１号公報Japanese Patent Laid-Open No. 02-32181
　しかしながら、上記特許文献１に記載の半導体ウエハ加工用テープでは、輸送中や保管中に接着剤層が空気中の水分を吸収して軟らかくなり、切削性が低下する場合があった。
　このような場合には、ダイシング時に、ヒゲ状の切削屑が発生し、これらの切削屑が基材フィルムや粘着剤層の切削屑とともにダイシングされ隣接するチップ間で融着して、ピックアップ時に、ピックアップしようとするチップに隣接するチップが付随してピックアップされてしまうピックアップミス（ダブルダイ）が発生するという問題があった。 However, in the semiconductor wafer processing tape described in Patent Document 1, the adhesive layer becomes soft by absorbing moisture in the air during transportation or storage, and the machinability may be reduced.
In such a case, whisker-like cutting waste is generated at the time of dicing, and these cutting wastes are diced together with the cutting waste of the base film or the adhesive layer and fused between adjacent chips. There is a problem that a pickup error (double die) occurs in which a chip adjacent to a chip to be picked up is picked up.
　そこで、本発明の目的は、接着剤層が空気中の水分を吸収することにより軟化することを低減し、ピックアップミスの発生を抑制することができる粘着フィルム及び半導体ウエハ加工用テープを提供することにある。 Accordingly, an object of the present invention is to provide a pressure-sensitive adhesive film and a semiconductor wafer processing tape capable of reducing the softening of the adhesive layer by absorbing moisture in the air and suppressing the occurrence of pickup errors. It is in.
　上記課題を解決するため、本発明の粘着フィルムは、基材フィルムと該基材フィルム上に設けられた粘着剤層とからなる粘着フィルムであって、透湿度が１０．０ｇ／ｍ2／ｄａｙ以下であることを特徴とする。 In order to solve the above problems, the pressure-sensitive adhesive film of the present invention is a pressure-sensitive adhesive film comprising a base film and a pressure-sensitive adhesive layer provided on the base film, and has a moisture permeability of 10.0 g / m 2 / day. It is characterized by the following.
　また、本発明の半導体ウエハ加工用テープは、基材フィルムと該基材フィルム上に設けられた粘着剤層とからなる粘着フィルムと、前記粘着剤層上に設けられた接着剤層とを有するウエハ加工用テープであって、前記粘着フィルムの透湿度が１０．０ｇ／ｍ2／ｄａｙ以下であることを特徴とする。 Moreover, the semiconductor wafer processing tape of the present invention has a pressure-sensitive adhesive film comprising a base film and a pressure-sensitive adhesive layer provided on the base film, and an adhesive layer provided on the pressure-sensitive adhesive layer. It is a tape for wafer processing, The moisture permeability of the said adhesive film is 10.0 g / m < 2 > / day or less, It is characterized by the above-mentioned.
　また、前記半導体ウエハ加工用テープにおいて、前記粘着フィルムと前記接着剤層とを合わせた吸水率が２．０体積％以下であることが好ましい。 In the semiconductor wafer processing tape, it is preferable that the water absorption rate of the adhesive film and the adhesive layer is 2.0% by volume or less.
　本発明の粘着フィルム及び半導体ウエハ加工用テープは、粘着フィルムに接着剤層が接合されて輸送・保管された場合に、接着剤層が空気中の水分を吸収することにより軟化することを低減し、ピックアップミスの発生を抑制することができる。 The pressure-sensitive adhesive film and semiconductor wafer processing tape of the present invention reduce the softening of the adhesive layer by absorbing moisture in the air when the adhesive layer is bonded to the pressure-sensitive adhesive film and transported and stored. The occurrence of pick-up mistakes can be suppressed.
本発明の半導体ウエハ加工用テープの一例を示す断面図である。It is sectional drawing which shows an example of the tape for semiconductor wafer processing of this invention. （ａ）は、半導体ウエハ加工用テープに、半導体ウエハＷとリングフレームが貼り合わされた状態を示す断面図であり、（ｂ）は、ダイシング後の半導体ウエハ加工用テープと半導体ウエハを示す断面図であり、（ｃ）は、エキスパンド後の半導体ウエハ加工用テープと半導体ウエハを示す断面図である。(A) is sectional drawing which shows the state by which the semiconductor wafer W and the ring frame were bonded together on the semiconductor wafer processing tape, (b) is sectional drawing which shows the semiconductor wafer processing tape and semiconductor wafer after dicing (C) is a sectional view showing a semiconductor wafer processing tape and a semiconductor wafer after expansion.
　以下に本発明の実施の形態を図面に基づいて詳細に説明する。
　本実施の形態に係る半導体ウエハ加工用テープ１５は、図１に示すように、基材フィルム１１の上に、粘着剤層１２が積層された粘着フィルム１４を有し、粘着剤層１２の上に接着剤層１３が積層されたダイシング・ダイボンディングフィルムである。なお、粘着剤層１２及び接着剤層１３は、使用工程や装置にあわせて予め所定形状に切断（プリカット）されていてもよい。ウエハＷ（図２（ａ）参照）に応じてプリカットされた接着剤層１３を積層した場合、ウエハＷが貼り合わされる部分には接着剤層１３があり、ダイシング用のリングフレーム２０（図２（ａ）参照）が貼り合わされる部分には接着剤層１３がなく粘着剤層１２のみが存在することになる。一般に、接着剤層１３は被着体と剥離しにくいため、プリカットされた接着剤層１３を使用することで、リングフレーム２０は粘着剤層１２に貼り合わすことができ、使用後のリングフレーム２０への糊残りを生じにくいという効果が得られる。また、本発明の半導体ウエハ加工用テープ１５は、ウエハ１枚分ごとに切断され積層された形態と、これが複数形成された長尺のシートをロール状に巻き取った形態とを含む。以下に、基材フィルム１１、粘着剤層１２、及び接着剤層１３についてそれぞれ詳細に説明する。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
As shown in FIG. 1, the semiconductor wafer processing tape 15 according to the present embodiment has an adhesive film 14 in which an adhesive layer 12 is laminated on a base film 11. It is a dicing die bonding film in which an adhesive layer 13 is laminated. The pressure-sensitive adhesive layer 12 and the adhesive layer 13 may be cut (pre-cut) into a predetermined shape in advance according to the use process and the apparatus. When the adhesive layer 13 pre-cut according to the wafer W (see FIG. 2A) is laminated, the adhesive layer 13 is present at the portion where the wafer W is bonded, and the ring frame 20 for dicing (FIG. 2). There is no adhesive layer 13 in the portion where (a) is attached, and only the pressure-sensitive adhesive layer 12 is present. In general, since the adhesive layer 13 is difficult to peel off from the adherend, the ring frame 20 can be bonded to the pressure-sensitive adhesive layer 12 by using the pre-cut adhesive layer 13, and the ring frame 20 after use is used. The effect that it is hard to produce the adhesive residue on is obtained. Moreover, the semiconductor wafer processing tape 15 of the present invention includes a form in which the wafer is cut and laminated for each wafer, and a form in which a plurality of long sheets formed by winding the wafer are wound into a roll. Below, the base film 11, the adhesive layer 12, and the adhesive layer 13 are each demonstrated in detail.
＜基材フィルム＞
　基材フィルムを構成する材料としては、特に限定されないが、ポリオレフィン及びポリ塩化ビニルから選択されることが好ましい。 <Base film>
Although it does not specifically limit as a material which comprises a base film, It is preferable to be selected from polyolefin and polyvinyl chloride.
　上記ポリオレフィンとしては、ポリエチレン、ポリプロピレン、エチレン－プロピレン共重合体、ポリブテン－１、ポリ－４－メチルペンテン－１、エチレン－酢酸ビニル共重合体、エチレン－アクリル酸エチル共重合体、エチレン－アクリル酸メチル共重合体、エチレン－アクリル酸共重合体、アイオノマーなどのα－オレフィンの単独重合体または共重合体あるいはこれらの混合物などが挙げられる。 Examples of the polyolefin include polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-acrylic acid. Examples thereof include homopolymers or copolymers of α-olefins such as methyl copolymers, ethylene-acrylic acid copolymers, and ionomers, or mixtures thereof.
　後述する粘着剤層として放射線照射により硬化し、粘着力が低下するタイプを用いる場合には、基材フィルムは、放射線透過性であることが好ましい。基材フィルムの厚さは、強度およびチップのピックアップ性確保の観点から、５０～３００μｍであることが好ましい。また、基材フィルムは、単層であっても、複数層で構成されていてもよい。 In the case of using a type that is cured by radiation irradiation and has a reduced adhesive strength as an adhesive layer to be described later, the substrate film is preferably radiation transmissive. The thickness of the base film is preferably 50 to 300 μm from the viewpoint of ensuring strength and chip pick-up properties. Further, the base film may be a single layer or may be composed of a plurality of layers.
＜粘着剤層＞
　粘着剤層は、基材フィルム上に粘着剤を塗工して製造することができる。粘着剤層としては特に制限はなく、エキスパンドの際に接着剤層及び半導体ウエハが剥離したりしない程度の保持性や、ピックアップ時には接着剤層と剥離が容易とする特性を有するものであればよい。ピックアップ性を向上させるために、粘着剤層は放射線硬化性のものが好ましい。 <Adhesive layer>
The pressure-sensitive adhesive layer can be produced by applying a pressure-sensitive adhesive on the base film. The pressure-sensitive adhesive layer is not particularly limited as long as it has a property that the adhesive layer and the semiconductor wafer do not peel off during expansion, and a property that makes it easy to peel off the adhesive layer during pick-up. . In order to improve the pickup property, the pressure-sensitive adhesive layer is preferably radiation-curable.
　例えば、粘着剤に使用される公知の塩素化ポリプロピレン樹脂、アクリル樹脂、ポリエステル樹脂、ポリウレタン樹脂、エポキシ樹脂、付加反応型オルガノポリシロキサン系樹脂、シリコンアクリレート樹脂、エチレン－酢酸ビニル共重合体、エチレン－アクリル酸エチル共重合体、エチレン－アクリル酸メチル共重合体、エチレン－アクリル酸共重合体、ポリイソプレンやスチレン・ブタジエン共重合体やその水素添加物等の各種エラストマー等やその混合物に、放射線重合性化合物を適宜配合して粘着剤を調製することが好ましい。また、各種界面活性剤や表面平滑化剤を加えてもよい。粘着剤層の厚さは特に限定されるものではなく適宜に設定してよいが、１～３０μｍが好ましい。 For example, known chlorinated polypropylene resins, acrylic resins, polyester resins, polyurethane resins, epoxy resins, addition reaction type organopolysiloxane resins, silicon acrylate resins, ethylene-vinyl acetate copolymers, ethylene- Radiation polymerization of ethyl acrylate copolymer, ethylene-methyl acrylate copolymer, ethylene-acrylic acid copolymer, various elastomers such as polyisoprene, styrene / butadiene copolymer and hydrogenated products, and mixtures thereof It is preferable to prepare a pressure-sensitive adhesive by appropriately mixing an adhesive compound. Various surfactants and surface smoothing agents may be added. The thickness of the pressure-sensitive adhesive layer is not particularly limited and may be appropriately set, but is preferably 1 to 30 μm.
　重合性化合物は、例えば光照射によって三次元網状化しうる分子内に光重合性炭素－炭素二重結合を少なくとも２個以上有する低分子量化合物や、光重合性炭素－炭素二重結合基を置換基に持つポリマーやオリゴマーが用いられる。具体的には、トリメチロールプロパントリアクリレート、ペンタエリスリトールトリアクリレート、ペンタエリスリトールテトラアクリレート、ジペンタエリスリトールモノヒドロキシペンタアクリレート、ジペンタエリスリトールヘキサアクリレート、１，４－ブチレングリコールジアクリレート、１，６ヘキサンジオールジアクリレート、ポリエチレングリコールジアクリレートや、オリゴエステルアクリレート等、シリコンアクリレート等、アクリル酸や各種アクリル酸エステル類の共重合体等が適用可能である。 The polymerizable compound is, for example, a low molecular weight compound having at least two photopolymerizable carbon-carbon double bonds in a molecule that can be three-dimensionally reticulated by light irradiation, or a photopolymerizable carbon-carbon double bond group as a substituent. Polymers and oligomers possessed by Specifically, trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, 1,4-butylene glycol diacrylate, 1,6 hexanediol diacrylate For example, acrylate, polyethylene glycol diacrylate, oligoester acrylate, silicon acrylate, etc., acrylic acid, copolymers of various acrylic esters, and the like are applicable.
　また、上記のようなアクリレート系化合物のほかに、ウレタンアクリレート系オリゴマーを用いることもできる。ウレタンアクリレート系オリゴマーは、ポリエステル型またはポリエーテル型などのポリオール化合物と、多価イソシアナート化合物（例えば、２，４－トリレンジイソシアナート、２，６－トリレンジイソシアナート、１，３－キシリレンジイソシアナート、１，４－キシリレンジイソシアナート、ジフェニルメタン４，４－ジイソシアナートなど）を反応させて得られる末端イソシアナートウレタンプレポリマーに、ヒドロキシル基を有するアクリレートあるいはメタクリレート（例えば、２－ヒドロキシエチルアクリレート、２－ヒドロキシエチルメタクリレート、２－ヒドロキシプロピルアクリレート、２－ヒドロキシプロピルメタクリレート、ポリエチレングリコールアクリレート、ポリエチレングリコールメタクリレートなど）を反応させて得られる。
　なお、粘着剤層には、上記の樹脂から選ばれる２種以上が混合されたものでもよい。また、以上に挙げた粘着剤の材料は、表面自由エネルギーを４０ｍJ／ｍ2以下とするうえで、トリフルオロメチル基、ジメチルシリル基、長鎖アルキル基等の無極性基をなるべく多く分子構造中に含むことが望ましい。 In addition to the above acrylate compounds, urethane acrylate oligomers can also be used. Urethane acrylate oligomers include polyester compounds or polyether compounds such as polyol compounds and polyisocyanate compounds (for example, 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diene). A terminal isocyanate urethane prepolymer obtained by reacting isocyanate, 1,4-xylylene diisocyanate, diphenylmethane 4,4-diisocyanate, etc.) with an acrylate or methacrylate having a hydroxyl group (for example, 2-hydroxyethyl) Acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, 2-hydroxypropyl methacrylate, polyethylene glycol acrylate, polyethylene glycol methacrylate, etc.) Obtained by the reaction.
The pressure-sensitive adhesive layer may be a mixture of two or more selected from the above resins. The above-mentioned pressure-sensitive adhesive materials have a molecular structure with as many nonpolar groups as possible, such as a trifluoromethyl group, a dimethylsilyl group, and a long-chain alkyl group, with a surface free energy of 40 mJ / m 2 or less. It is desirable to include.
　なお、粘着剤層の樹脂には、放射線を基材フィルムに照射して粘着剤層を硬化させる放射線重合性化合物の他、アクリル系粘着剤、光重合開始剤、硬化剤等を適宜配合して粘着剤を調製することもできる。 In addition, the resin for the pressure-sensitive adhesive layer contains, as appropriate, an acrylic pressure-sensitive adhesive, a photopolymerization initiator, a curing agent, etc. in addition to the radiation polymerizable compound that cures the pressure-sensitive adhesive layer by irradiating the base film with radiation. An adhesive can also be prepared.
　光重合開始剤を使用する場合、例えばイソプロピルベンゾインエーテル、イソブチルベンゾインエーテル、ベンゾフェノン、ミヒラーズケトン、クロロチオキサントン、ドデシルチオキサントン、ジメチルチオキサントン、ジエチルチオキサントン、ベンジルジメチルケタール、α－ヒドロキシシクロヘキシルフェニルケトン、２－ヒドロキシメチルフェニルプロパン等を使用することができる。これら光重合開始剤の配合量はアクリル系共重合体１００質量部に対して０．０１～３０質量部が好ましく、１～１０重量部がより好ましい。 When using a photopolymerization initiator, for example, isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, benzyldimethyl ketal, α-hydroxycyclohexyl phenyl ketone, 2-hydroxymethylphenyl Propane or the like can be used. The blending amount of these photopolymerization initiators is preferably 0.01 to 30 parts by weight, more preferably 1 to 10 parts by weight with respect to 100 parts by weight of the acrylic copolymer.
　なお、粘着剤中に低分子成分が存在していると、基材フィルム製造後に長期保管している間に、低分子成分が粘着剤層表面に移行し粘接着特性を損なう恐れがあるため、ゲル分率が高いことが望ましく、通常６０％以上、好ましくは７０％以上である。ここで、ゲル分率とは、以下のように算出されるものをいう。粘着剤層約０．０５ｇを秤取し、キシレン５０ｍｌに１２０℃で２４時間浸漬した後、２００メッシュのステンレス製金網で濾過し、金網上の不溶解分を１１０℃にて１２０分間乾燥する。次に、乾燥した不溶解分の質量を秤量し、下記に示す式１にてゲル分率を算出する。
ゲル分率（％）＝（不溶解分の質量／秤取した粘着剤層の質量）×１００（式１） In addition, if low molecular components are present in the pressure-sensitive adhesive, the low-molecular components may migrate to the surface of the pressure-sensitive adhesive layer during storage for a long time after production of the base film, which may impair the adhesive properties. The gel fraction is desirably high and is usually 60% or more, preferably 70% or more. Here, a gel fraction means what is calculated as follows. About 0.05 g of the pressure-sensitive adhesive layer is weighed and immersed in 50 ml of xylene at 120 ° C. for 24 hours, filtered through a 200 mesh stainless steel wire mesh, and the insoluble matter on the wire mesh is dried at 110 ° C. for 120 minutes. Next, the mass of the dried insoluble matter is weighed, and the gel fraction is calculated by the following formula 1.
Gel fraction (%) = (mass of insoluble matter / mass of weighed pressure-sensitive adhesive layer) × 100 (formula 1)
　粘着フィルムの透湿度は、１０．０ｇ／ｍ2／ｄａｙ以下である。このように、粘着フィルムの透湿度を１０．０ｇ／ｍ2／ｄａｙ以下とすることにより、半導体ウエハ加工用テープが、ウエハ１枚分ごとに切断され積層された状態、あるいは長尺のシートをロール状に巻き取った状態で輸送・保管される最中に、空気中の水蒸気が外側から内側へ透過しにくくなるため、接着剤層に到達する水分量が減少し、接着剤層の軟化が低減される。このため、ダイシング時のヒゲ状の切削屑の発生が低減され、これらの切削屑が基材フィルムや粘着剤層の切削屑とともにダイシングされ隣接するチップ間で融着して、ピックアップ時にピックアップミスが発生するのを抑制することができる。 The moisture permeability of the adhesive film is 10.0 g / m 2 / day or less. Thus, by setting the moisture permeability of the adhesive film to 10.0 g / m 2 / day or less, the semiconductor wafer processing tape is cut and laminated for each wafer, or a long sheet is used. During transportation and storage in the state of being wound in a roll, it becomes difficult for water vapor to permeate from the outside to the inside, reducing the amount of water reaching the adhesive layer and softening the adhesive layer. Reduced. For this reason, the generation of whiskers-like cutting waste during dicing is reduced, and these cutting wastes are diced together with the cutting waste of the base film and the adhesive layer and fused between adjacent chips, and pickup errors are caused during pickup. Generation | occurrence | production can be suppressed.
　粘着フィルムの透湿度を低下させるには、基材フィルムに用いるポリマーとして、ポリエチレン、ポリプロピレン、ポリエチレンナフタレート等透湿度の低いポリマーを使用するとよい。また、基材フィルムの厚みを大きくすることにより、粘着フィルムの透湿度を低下させることもできる。さらに、粘着フィルムの透湿度を低下させるには、粘着剤層の厚さを厚くするとよい。また、粘着剤層の架橋密度を上げることにより透湿度を低下させることもできる。架橋密度を下げるためには、硬化剤量を増加、または粘着剤層に水酸基の多いポリマーを使用すればよい。 In order to lower the moisture permeability of the adhesive film, a polymer having a low moisture permeability such as polyethylene, polypropylene, polyethylene naphthalate may be used as the polymer used for the base film. Moreover, the water vapor transmission rate of an adhesive film can also be reduced by enlarging the thickness of a base film. Furthermore, in order to reduce the moisture permeability of the adhesive film, the thickness of the adhesive layer is preferably increased. Further, the moisture permeability can be lowered by increasing the crosslink density of the pressure-sensitive adhesive layer. In order to reduce the crosslinking density, the amount of the curing agent is increased, or a polymer having many hydroxyl groups may be used in the pressure-sensitive adhesive layer.
＜接着剤層＞
　接着剤層は、半導体ウエハが貼り合わされ切断された後、チップをピックアップする際に、切断された接着剤層が粘着剤層から剥離してチップに付着しており、チップをパッケージ基板やリードフレームに固定する際のボンディングフィルムとして機能するものである。 <Adhesive layer>
When the chip is picked up after the semiconductor wafer is bonded and cut, the adhesive layer is peeled off from the adhesive layer and attached to the chip, and the chip is attached to the package substrate or lead frame. It functions as a bonding film when it is fixed to.
　接着剤層は、接着剤を予めフィルム化したものであり、例えば、接着剤に使用される公知のポリイミド樹脂、ポリアミド樹脂、ポリエーテルイミド樹脂、ポリアミドイミド樹脂、ポリエステル樹脂、ポリエステルイミド樹脂、フェノキシ樹脂、ポリスルホン樹脂、ポリエーテルスルホン樹脂、ポリフェニレンサルファイド樹脂、ポリエーテルケトン樹脂、塩素化ポリプロピレン樹脂、アクリル樹脂、ポリウレタン樹脂、エポキシ樹脂、ポリアクリルアミド樹脂、メラミン樹脂等やその混合物を使用することができるが、接着剤層１３の分断性をよくするためには、アクリル系共重合体、エポキシ樹脂を含み、アクリル系共重合体のＴｇが１０℃以上であることが好ましい。さらには、無機フィラーを５０％以上含有することが好ましい。また、チップやリードフレームに対する接着力を強化するために、シランカップリング剤もしくはチタンカップリング剤を添加剤として前記材料やその混合物に加えることが望ましい。接着剤層の厚さは特に制限されるものではないが、通常５～１００μｍ程度が好ましい。 The adhesive layer is a film in which an adhesive is formed in advance. For example, a known polyimide resin, polyamide resin, polyetherimide resin, polyamideimide resin, polyester resin, polyesterimide resin, phenoxy resin used for adhesives , Polysulfone resin, polyether sulfone resin, polyphenylene sulfide resin, polyether ketone resin, chlorinated polypropylene resin, acrylic resin, polyurethane resin, epoxy resin, polyacrylamide resin, melamine resin and the like, and mixtures thereof can be used. In order to improve the dividing property of the adhesive layer 13, it is preferable that the acrylic copolymer and the epoxy resin are included, and the acrylic copolymer has a Tg of 10 ° C. or higher. Furthermore, it is preferable to contain 50% or more of an inorganic filler. Moreover, in order to reinforce the adhesive force with respect to a chip | tip or a lead frame, it is desirable to add a silane coupling agent or a titanium coupling agent to the said material and its mixture as an additive. The thickness of the adhesive layer is not particularly limited, but is usually preferably about 5 to 100 μm.
　エポキシ樹脂は、硬化して接着作用を呈するものであれば特に制限はないが、二官能基以上で、好ましくは分子量が５０００未満、より好ましくは３０００未満のエポキシ樹脂が使用できる。また、好ましくは分子量が５００以上、より好ましくは８００以上のエポキシ樹脂が使用できる。 The epoxy resin is not particularly limited as long as it cures and exhibits an adhesive action, but an epoxy resin having two or more functional groups, preferably having a molecular weight of less than 5000, more preferably less than 3000 can be used. Further, an epoxy resin having a molecular weight of preferably 500 or more, more preferably 800 or more can be used.
　例えば、ビスフェノールＡ型エポキシ樹脂、ビスフェノールＦ型エポキシ樹脂、ビスフェノールＳ型エポキシ樹脂、脂環式エポキシ樹脂、脂肪族鎖状エポキシ樹脂、フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、ビスフェノールＡノボラック型エポキシ樹脂、ビフェノールのジグリシジリエーテル化物、ナフタレンジオールのジグリシジリエーテル化物、フェノール類のジグリシジリエーテル化物、アルコール類のジグリシジルエーテル化物、及びこれらのアルキル置換体、ハロゲン化物、水素添加物などの二官能エポキシ樹脂、ノボラック型エポキシ樹脂が挙げられる。また、多官能エポキシ樹脂や複素環含有エポキシ樹脂等、一般に知られているものを適用することもできる。これらは単独で又は二種類以上を組み合わせて使用することができる。さらに、特性を損なわない範囲でエポキシ樹脂以外の成分が不純物として含まれていてもよい。 For example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, alicyclic epoxy resin, aliphatic chain epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol A novolak type epoxy Resin, diglycidyl etherified product of biphenol, diglycidyl etherified product of naphthalenediol, diglycidyl etherified product of phenol, diglycidyl etherified product of alcohol, and alkyl-substituted products, halides, hydrogenated products, etc. And a novolak-type epoxy resin. Moreover, what is generally known, such as a polyfunctional epoxy resin and a heterocyclic ring-containing epoxy resin, can also be applied. These can be used alone or in combination of two or more. Furthermore, components other than the epoxy resin may be included as impurities within a range that does not impair the characteristics.
　アクリル系共重合体としては、例えば、エポキシ基含有アクリル共重合体を用いることができる。エポキシ基含有アクリル共重合体は、エポキシ基を有するグリシジルアクリレート又はグリシジルメタクリレートを０．５～６重量％含む。高い接着力を得るためには、０．５重量％以上が好ましく、６重量％以下であればゲル化を抑制できる。 As the acrylic copolymer, for example, an epoxy group-containing acrylic copolymer can be used. The epoxy group-containing acrylic copolymer contains 0.5 to 6% by weight of glycidyl acrylate or glycidyl methacrylate having an epoxy group. In order to obtain a high adhesive strength, 0.5% by weight or more is preferable, and gelation can be suppressed if it is 6% by weight or less.
　官能基モノマーとして用いるグリシジルアクリレート又はグリシジルメタクリレートの量は０．５～６重量％の共重合体比である。つまり、本発明においてエポキシ基含有アクリル共重合体は、原料としてグリシジルアクリレート又はグリシジルメタクリレートを、得られる共重合体に対し０．５～６重量％となる量用いて得られた共重合体をいう。その残部はメチルアクリレート、メチルメタクリレートなどの炭素数１～８のアルキル基を有するアルキルアクリレート、アルキルメタクリレート、およびスチレンやアクリロニトリルなどの混合物を用いることができる。これらの中でもエチル（メタ）アクリレート及び／又はブチル（メタ）アクリレートが特に好ましい。混合比率は、共重合体のＴｇを考慮して調整することが好ましい。重合方法は特に制限が無く、例えば、パール重合、溶液重合等が挙げられ、これらの方法により共重合体が得られる。エポキシ基含有アクリル共重合体の重量平均分子量は１０万以上であり、この範囲であると接着性及び耐熱性が高く、３０万～３００万であることが好ましく、５０万～２００万であることがより好ましい。３００万以下であると、フロー性が低下することにより、半導体素子を貼付ける支持部材に必要に応じて形成された配線回路への充填性が低下する可能性を減らすことができる。
　なお、重量平均分子量は、ゲルパーミエーションクロマトグラフィー法（ＧＰＣ）で標準ポリスチレンによる検量線を用いたポリスチレン換算値である。 The amount of glycidyl acrylate or glycidyl methacrylate used as the functional group monomer is a copolymer ratio of 0.5 to 6% by weight. That is, in the present invention, the epoxy group-containing acrylic copolymer refers to a copolymer obtained by using glycidyl acrylate or glycidyl methacrylate as a raw material in an amount of 0.5 to 6% by weight based on the obtained copolymer. . The remainder can be a mixture of an alkyl acrylate having 1 to 8 carbon atoms such as methyl acrylate or methyl methacrylate, an alkyl methacrylate, and styrene or acrylonitrile. Among these, ethyl (meth) acrylate and / or butyl (meth) acrylate are particularly preferable. The mixing ratio is preferably adjusted in consideration of the Tg of the copolymer. There is no restriction | limiting in particular in a polymerization method, For example, pearl polymerization, solution polymerization, etc. are mentioned, A copolymer is obtained by these methods. The weight average molecular weight of the epoxy group-containing acrylic copolymer is 100,000 or more, and if it is in this range, the adhesiveness and heat resistance are high, preferably 300,000 to 3,000,000, and 500,000 to 2,000,000. Is more preferable. If it is 3 million or less, the flowability is lowered, and thus the possibility that the filling property to the wiring circuit formed on the support member to which the semiconductor element is attached is lowered as required can be reduced.
In addition, a weight average molecular weight is a polystyrene conversion value using the calibration curve by a standard polystyrene by the gel permeation chromatography method (GPC).
　無機フィラーとしては特に制限が無く、例えば、水酸化アルミニウム、水酸化マグネシウム、炭酸カルシウム、炭酸マグネシウム、ケイ酸カルシウム、ケイ酸マグネシウム、酸化カルシウム、酸化マグネシウム、酸化アルミニウム、窒化アルミニウム、ほう酸アルミウイスカ、窒化ほう素、結晶質シリカ、非晶質シリカなどが挙げられる。これらは、１種又は２種以上を併用することもできる。熱伝導性向上のためには、酸化アルミニウム、窒化アルミニウム、窒化ほう素、結晶性シリカ、非晶性シリカ等が好ましい。特性のバランスの観点ではシリカが好ましい。 There are no particular restrictions on the inorganic filler. For example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, nitriding Examples thereof include boron, crystalline silica, and amorphous silica. These may be used alone or in combination of two or more. In order to improve thermal conductivity, aluminum oxide, aluminum nitride, boron nitride, crystalline silica, amorphous silica and the like are preferable. Silica is preferable from the viewpoint of balance of properties.
　フィラーの平均粒径は、０．００２～２μｍであることが好ましく、０．００８～０．５μｍであることがより好ましく、０．０１～０．０５μｍであることがさらに好ましい。フィラーの平均粒径が０．００２μｍ未満であると被着体へのぬれ性が低下し、接着性が低下する傾向があり、２μｍを超えるとフィラー添加による補強効果が小さくなり、耐熱性が低下する傾向がある。ここで、平均粒径とは、ＴＥＭ、ＳＥＭ等により測定したフィラー１００個の粒径から求められる平均値をいう。 The average particle size of the filler is preferably 0.002 to 2 μm, more preferably 0.008 to 0.5 μm, and still more preferably 0.01 to 0.05 μm. If the average particle size of the filler is less than 0.002 μm, the wettability to the adherend tends to decrease, and the adhesion tends to decrease. If the average particle size exceeds 2 μm, the reinforcing effect due to the addition of the filler decreases and the heat resistance decreases. Tend to. Here, the average particle diameter means an average value obtained from the particle diameters of 100 fillers measured by TEM, SEM or the like.
　半導体ウエハ加工用テープは、粘着剤層と接着剤層との間の剥離性を良くする観点から、粘着フィルムと接着剤層とを合わせた吸水率が２．０体積％以下とすることが好ましい。従来、ピックアップ時に、粘着剤層と接着剤層との間の剥離をしやすくするために、ウエハ加工用テープの下側からピンによって半導体チップを突き上げ力や突き上げ高さを大きくすることが行われているが、近年、半導体チップが薄くなる傾向にあり、半導体チップが薄い場合に、突き上げ力を大きくすると、チップが破損してしまうという問題もあった。粘着フィルムと接着剤層とを合わせた吸水率が２．０体積％以下であると、接着剤層が軟化して、切削の際に粘着剤層と共に癒着したり、粘着フィルムが吸収した水分が接着剤層へと移行して、両者が癒着するのを低減することができるので、粘着剤層と接着剤層との間の剥離性が良くなる。このため、ピンによる突き上げ力を大きくする必要がないため、半導体チップが薄い場合であっても、良好にピックアップすることができる。 From the viewpoint of improving the peelability between the pressure-sensitive adhesive layer and the adhesive layer, the semiconductor wafer processing tape preferably has a water absorption rate of 2.0% by volume or less in combination with the pressure-sensitive adhesive film and the adhesive layer. . Conventionally, when picking up, in order to facilitate separation between the adhesive layer and the adhesive layer, the semiconductor chip is pushed up from the lower side of the wafer processing tape by a pin and the push-up force or push-up height is increased. However, in recent years, there is a tendency that the semiconductor chip tends to be thin, and if the semiconductor chip is thin and the push-up force is increased, the chip is damaged. When the water absorption rate of the pressure-sensitive adhesive film and the adhesive layer is 2.0% by volume or less, the adhesive layer softens and adheres with the pressure-sensitive adhesive layer during cutting, or moisture absorbed by the pressure-sensitive adhesive film Since it can transfer to an adhesive bond layer and it can reduce that both adhere, the peelability between an adhesive layer and an adhesive bond layer becomes good. For this reason, since it is not necessary to increase the push-up force by the pin, even when the semiconductor chip is thin, it can be picked up satisfactorily.
　粘着フィルムと接着剤層とを合わせた吸水率を低下させるためには、基材フィルムに用いるポリマーとして、ポリプロピレン、ポリエチレン等吸水率の低いポリマーを使用するとよい。また、基材フィルムの厚みを小さくすることにより、吸水率を低下させることもできる。また、粘着剤層は、ヒドロキシ基、アミノ基、スルホ基、カルボキシル基などの官能基やアミド結合、エーテル結合部分を少なくし、メチル基やアリール基の導入量を増やすことで、吸水率を低下させることができる。また、接着剤層に、アクリル等吸水率の低いポリマーを用いることにより、吸水率を低下させることもできる。また、接着剤層に用いるエポキシやフェノール等について、分子量の低いものを用いることにより、吸水率を低下させることもできる。さらには、接着剤層に含まれる無機フィラーの量を低減する
ことによっても、吸水率を低下させることもできる。 In order to reduce the water absorption rate of the adhesive film and the adhesive layer, a polymer having a low water absorption rate, such as polypropylene or polyethylene, may be used as the polymer used for the base film. Moreover, a water absorption can also be reduced by making the thickness of a base film small. In addition, the pressure-sensitive adhesive layer reduces the water absorption rate by reducing the number of functional groups such as hydroxy, amino, sulfo, and carboxyl, amide bonds, and ether bonds, and increasing the amount of methyl and aryl groups introduced. Can be made. Moreover, a water absorption can also be reduced by using a polymer with low water absorption, such as an acryl, for an adhesive bond layer. Moreover, about an epoxy, phenol, etc. which are used for an adhesive bond layer, a water absorption rate can also be reduced by using a thing with low molecular weight. Furthermore, the water absorption can also be lowered by reducing the amount of the inorganic filler contained in the adhesive layer.
　次に、図１に示す本発明の半導体ウエハ加工用テープ１５を使用して、接着剤層付き半導体チップを製造する方法について、図２を参照しながら説明する。 Next, a method for manufacturing a semiconductor chip with an adhesive layer using the semiconductor wafer processing tape 15 of the present invention shown in FIG. 1 will be described with reference to FIG.
（貼合工程）
　まず、図２（ａ）に示すように、半導体ウエハ加工用テープ１５の接着剤層１３に半導体ウエハＷの裏面を貼り合わせるとともに、粘着剤層１２の所定位置にリングフレーム２０を貼り合わせる。 (Bonding process)
First, as shown in FIG. 2A, the back surface of the semiconductor wafer W is bonded to the adhesive layer 13 of the semiconductor wafer processing tape 15, and the ring frame 20 is bonded to a predetermined position of the adhesive layer 12.
（ダイシング工程）
　吸着ステージ２２により、ウエハ加工用テープ１５を基材フィルム１１面側から吸着支持し、図示しないブレードを用いて、半導体ウエハＷを機械的に切断し、複数の半導体チップＣに分割する（図２（ｂ））。なお、このとき、接着剤層１３や粘着剤層１２、基材フィルム１１の一部も適宜ダイシングされる。このとき、粘着フィルムの透湿度を１０．０ｇ／ｍ2／ｄａｙ以下であるため、半導体ウエハ加工用テープの輸送・保管中に、空気中の水蒸気が外側から内側へ透過しにくく、接着剤層の軟化が低減されているため、ヒゲ状の切削屑の発生が低減される。 (Dicing process)
The wafer processing tape 15 is sucked and supported from the surface of the base film 11 by the suction stage 22, and the semiconductor wafer W is mechanically cut using a blade (not shown) and divided into a plurality of semiconductor chips C (FIG. 2). (B)). At this time, the adhesive layer 13, the pressure-sensitive adhesive layer 12, and a part of the base film 11 are also appropriately diced. At this time, since the moisture permeability of the pressure-sensitive adhesive film is 10.0 g / m 2 / day or less, water vapor in the air hardly permeates from the outside to the inside during transportation and storage of the semiconductor wafer processing tape, and the adhesive layer Since the softening of is reduced, the generation of beard-like cutting waste is reduced.
（照射工程）
　そして、放射線を基材フィルム１１の下面から粘着剤層１２に照射して粘着剤層１２を硬化させる。硬化させた粘着剤層１２は粘着力が低下するため、粘着剤層１２上の接着剤層１３を剥離させることが可能となる。なお、粘着剤層を複数の層で構成する場合、接着剤層１３を粘着剤層１２から剥離するために、粘着剤層全体を硬化させる必要はなく、少なくともウエハに対応する粘着剤層部分を硬化させてもよい。 (Irradiation process)
Then, the pressure-sensitive adhesive layer 12 is cured by irradiating the pressure-sensitive adhesive layer 12 with radiation from the lower surface of the base film 11. Since the adhesive force of the cured adhesive layer 12 is reduced, the adhesive layer 13 on the adhesive layer 12 can be peeled off. When the pressure-sensitive adhesive layer is composed of a plurality of layers, it is not necessary to cure the entire pressure-sensitive adhesive layer in order to peel the adhesive layer 13 from the pressure-sensitive adhesive layer 12, and at least the pressure-sensitive adhesive layer portion corresponding to the wafer is formed. It may be cured.
（エキスパンド工程）
　照射工程の後、分割された複数の半導体チップＣを保持する半導体ウエハ加工用テープ１５をエキスパンド装置のステージ２１上に載置する。そして、図２（ｃ）に示すように、中空円柱形状の突き上げ部材２３を、半導体ウエハ加工用テープ１５の下面側から上昇させ、上記粘着フィルム１４をリングフレーム２０の径方向及び周方向に引き伸ばす。 (Expanding process)
After the irradiation step, the semiconductor wafer processing tape 15 holding the plurality of divided semiconductor chips C is placed on the stage 21 of the expanding apparatus. Then, as shown in FIG. 2C, the hollow cylindrical push-up member 23 is raised from the lower surface side of the semiconductor wafer processing tape 15, and the adhesive film 14 is stretched in the radial direction and the circumferential direction of the ring frame 20. .
（ピックアップ工程）
　エキスパンド工程を実施した後、粘着フィルム１４をエキスパンドした状態のままで、チップＣをピックアップするピックアップ工程を実施する。具体的には、粘着フィルム１４の下側からチップＣをピン（図示しない）によって突き上げるとともに、粘着フィルム１４の上面側から吸着冶具（図示しない）でチップＣを吸着することで、個片化されたチップＣを接着剤層１３とともにピックアップする。ダイシング工程において接着剤層１３のヒゲ状の切削屑の発生が低減されるため、これらの切削屑が基材フィルム１１や粘着剤層１２の切削屑とともに隣接するチップ間で融着して、ピックアップミスが発生するのを抑制することができる。さらに、粘着フィルム１４と接着剤層１３とを合わせた吸水率が２．０体積％以下である場合は、粘着剤層１２と接着剤層１３との間の剥離がし易くなるため、半導体チップＣの厚みが薄い場合であっても、良好にピックアップされる。 (Pickup process)
After performing the expanding process, the pick-up process which picks up the chip | tip C is implemented with the adhesive film 14 expanded. Specifically, the chip C is pushed up from the lower side of the adhesive film 14 by a pin (not shown), and the chip C is adsorbed from the upper surface side of the adhesive film 14 by an adsorption jig (not shown). The chip C is picked up together with the adhesive layer 13. In the dicing process, since the generation of the beard-like cutting debris of the adhesive layer 13 is reduced, these cutting debris is fused between adjacent chips together with the cutting debris of the base film 11 and the pressure-sensitive adhesive layer 12, and the pickup is performed. The occurrence of mistakes can be suppressed. Further, when the water absorption rate of the pressure-sensitive adhesive film 14 and the adhesive layer 13 is 2.0% by volume or less, the adhesive layer 12 and the adhesive layer 13 are easily peeled off. Even when the thickness of C is thin, it is picked up well.
（ダイボンディング工程）
　そして、ピックアップ工程を実施した後、ダイボンディング工程を実施する。具体的には、ピックアップ工程でチップＣとともにピックアップされた接着剤層により、半導体チップをリードフレームやパッケージ基板等に接着して、半導体装置を製造する。 (Die bonding process)
Then, after performing the pickup process, the die bonding process is performed. Specifically, a semiconductor device is manufactured by bonding a semiconductor chip to a lead frame, a package substrate, or the like by an adhesive layer picked up together with the chip C in a pickup process.
　以上より、粘着フィルムに接着剤層が接合されて輸送・保管された場合に、接着剤層が空気中の水分を吸収することにより軟化することを低減し、ピックアップミスの発生を抑制することができる。 From the above, when the adhesive layer is bonded to the adhesive film and transported / stored, the adhesive layer can be prevented from being softened by absorbing moisture in the air, and the occurrence of pickup errors can be suppressed. it can.
　次に、本発明の実施例について説明するが、本発明はこれら実施例に限定されるものではない。 Next, examples of the present invention will be described, but the present invention is not limited to these examples.
（粘着フィルムの調製）
（粘着フィルム１）
　５０℃で４８時間、あらかじめ乾燥した低密度ポリエチレン（ノバテックＬＬ（日本ポリエチレン株式会社製、商品名））を溶融し、押出し機を用いて厚さ１００μｍの長尺フィルム状に基材フィルムを成形した。溶媒のトルエン４００ｇ中に、ｎ－ブチルアクリレート１２８ｇ、２－エチルヘキシルアクリレート３０７ｇ、メチルメタアクリレート６７ｇ、メタクリル酸１．５ｇ、重合開始剤としてベンゾイルペルオキシドの混合液を、適宜、滴下量を調整し、反応温度および反応時間を調整し、官能基をもつポリマー溶液を得た。次にこのポリマー溶液に、放射線硬化性炭素－炭素二重結合および官能基を有する化合物として、別にメタクリル酸とエチレングリコールから合成した２－ヒドロキシエチルメタクリレート２．５ｇ、重合禁止剤としてハイドロキノンを適宜滴下量を調整して加え反応温度および反応時間を調整して、放射線硬化性炭素－炭素二重結合を有する化合物（Ａ）の溶液を得た。続いて、化合物（Ａ）溶液中の化合物（Ａ）１００質量部に対してポリイソシアネート（コロネートＬ（日本ポリウレタン社製、商品名））１質量部を加え、光重合開始剤（イルガキュアー１８４（日本チバガイギー社製、商品名））０．５質量部、溶媒として酢酸エチル１５０質量部を化合物（Ａ）溶液に加えて混合して、放射線硬化性の粘着剤組成物を調製した。成形した基材フィルム上に、前記粘着剤組成物を乾燥後の膜厚が１０μｍとなるように塗工し、１１０℃で１０分間乾燥して粘着フィルム１を得た。
（粘着フィルム２）
　低密度ポリエチレンに代えて高密度ポリエチレン（ノバテックＨＤ（日本ポリエチレン株式会社製、商品名））を使用した他は、粘着フィルム１と同様にして粘着フィルム２を得た。
（粘着フィルム３）
　基材フィルムの膜厚を７０μｍとした他は、粘着フィルム２と同様にして粘着フィルム３を得た。
（粘着フィルム４）
　基材フィルムの膜厚を７０μｍとした他は、粘着フィルム１と同様にして粘着フィルム４を得た。
（粘着フィルム５）
　低密度ポリエチレンに代えてＥＶＡ（ノバテックＥＶＡ（日本ポリエチレン株式会社製、商品名））を使用した他は、粘着フィルム１と同様にして粘着フィルム５を得た。
（粘着フィルム６）
　低密度ポリエチレンに代えてポリプロピレン（ノバテックＰＰ（日本ポリプロ株式会社製、商品名））を使用した他は、粘着フィルム１と同様にして粘着フィルム６を得た。
（粘着フィルム７）
　低密度ポリエチレンに代えてポリアミド（ナイロンＭＸＤ６（三菱ガス化学株式会社製、商品名））を使用した他は、粘着フィルム１と同様にして粘着フィルム７を得た。 (Preparation of adhesive film)
(Adhesive film 1)
Low-density polyethylene (Novatech LL (manufactured by Nippon Polyethylene Co., Ltd., trade name)) previously dried at 50 ° C. was melted for 48 hours, and a base film was formed into a long film having a thickness of 100 μm using an extruder. . In 400 g of toluene as a solvent, 128 g of n-butyl acrylate, 307 g of 2-ethylhexyl acrylate, 67 g of methyl methacrylate, 1.5 g of methacrylic acid, and a mixture of benzoyl peroxide as a polymerization initiator are appropriately adjusted in the amount of dropwise addition and reacted. The polymer solution having a functional group was obtained by adjusting the temperature and reaction time. Next, 2.5 g of 2-hydroxyethyl methacrylate separately synthesized from methacrylic acid and ethylene glycol as a compound having a radiation curable carbon-carbon double bond and a functional group, and hydroquinone as a polymerization inhibitor are appropriately added dropwise to this polymer solution. A solution of the compound (A) having a radiation curable carbon-carbon double bond was obtained by adjusting the amount and adjusting the reaction temperature and reaction time. Subsequently, 1 part by mass of polyisocyanate (Coronate L (manufactured by Nippon Polyurethane Co., Ltd., trade name)) is added to 100 parts by mass of the compound (A) in the compound (A) solution, and a photopolymerization initiator (Irgacure 184 ( Nippon Chiba Geigy, trade name)) 0.5 parts by mass and 150 parts by mass of ethyl acetate as a solvent were added to the compound (A) solution and mixed to prepare a radiation-curable pressure-sensitive adhesive composition. On the molded base film, the pressure-sensitive adhesive composition was applied so that the film thickness after drying was 10 μm, and dried at 110 ° C. for 10 minutes to obtain a pressure-sensitive adhesive film 1.
(Adhesive film 2)
An adhesive film 2 was obtained in the same manner as the adhesive film 1 except that high-density polyethylene (Novatech HD (manufactured by Nippon Polyethylene Co., Ltd., trade name)) was used instead of the low-density polyethylene.
(Adhesive film 3)
An adhesive film 3 was obtained in the same manner as the adhesive film 2 except that the film thickness of the base film was set to 70 μm.
(Adhesive film 4)
An adhesive film 4 was obtained in the same manner as the adhesive film 1 except that the film thickness of the base film was set to 70 μm.
(Adhesive film 5)
An adhesive film 5 was obtained in the same manner as the adhesive film 1 except that EVA (Novatech EVA (manufactured by Nippon Polyethylene Co., Ltd., trade name)) was used instead of the low density polyethylene.
(Adhesive film 6)
An adhesive film 6 was obtained in the same manner as the adhesive film 1 except that polypropylene (Novatec PP (trade name, manufactured by Nippon Polypro Co., Ltd.)) was used instead of the low density polyethylene.
(Adhesive film 7)
An adhesive film 7 was obtained in the same manner as the adhesive film 1 except that polyamide (nylon MXD6 (trade name, manufactured by Mitsubishi Gas Chemical Co., Ltd.)) was used instead of the low density polyethylene.
（接着フィルムの調整）
（接着フィルム１）
　エポキシ樹脂としてクレゾールノボラック型エポキシ樹脂（エポキシ当量１９７、分子量１２００、軟化点７０℃）１５重量部、アクリル樹脂（質量平均分子量：８０万、ガラス転移温度－１７℃）７０重量部、硬化剤としてフェノールノボラック樹脂（水酸基当量１０４、軟化点８０℃）１５重量部、促進剤として２－フェニルイミダゾール（キュアゾール２ＰＺ（四国化成株式会社製、商品名））１部を有機溶剤中で攪拌し接着剤ワニスを得た。得られた接着剤ワニスを、厚さ５０μｍのポリエチレンテレフタレート（ＰＥＴ）フィルム上に塗布し、１２０℃で１０分間加熱乾燥して接着フィルム１を作製した。
（接着フィルム２）
　エポキシ樹脂としてクレゾールノボラック型エポキシ樹脂（エポキシ当量１９７、分子量１２００、軟化点７０℃）５重量部、シランカップリング剤として３－グリシドキシプロピルトリメトキシシラン０．５質量部、平均粒径１．０μmのシリカフィラー５０質量部、アクリル樹脂（質量平均分子量：８０万、ガラス転移温度－１７℃）４０質量部、硬化剤としてフェノールノボラック樹脂（水酸基当量１０４、軟化点８０℃）５重量部、促進剤として２－フェニルイミダゾール（キュアゾール２ＰＺ（四国化成株式会社製、商品名））１部を有機溶剤中で攪拌し接着剤ワニスを得た。得られた接着剤ワニスを、厚さ５０μｍのポリエチレンテレフタレート（ＰＥＴ）フィルム上に塗布し、１２０℃で１０分間加熱乾燥して接着フィルム２を作製した。
（接着フィルム３）
　アクリル樹脂の代わりに２，２´－ビス［４－（４－アミノフェノキシ）フェニル］プロパン、３，３´，４，４´－ビフェニルテトラカルボン酸二無水物及び無水ピロメリット酸より合成された質量平均分子量５万のポリイミド樹脂を使用した他は、接着フィルム２と同様に作製した。
（接着フィルム４）
　アクリル樹脂の代わりに２，２´－ビス［４－（４－アミノフェノキシ）フェニル］プロパン、３，３´，４，４´－ビフェニルテトラカルボン酸二無水物及び無水ピロメリット酸より合成された質量平均分子量５万のポリイミド樹脂を使用した他は、接着フィルム１と同様に作製した。 (Adjustment of adhesive film)
(Adhesive film 1)
15 parts by weight of a cresol novolac type epoxy resin (epoxy equivalent 197, molecular weight 1200, softening point 70 ° C.) as an epoxy resin, 70 parts by weight of an acrylic resin (mass average molecular weight: 800,000, glass transition temperature −17 ° C.), phenol as a curing agent 15 parts by weight of a novolak resin (hydroxyl equivalent 104, softening point 80 ° C.) and 1 part of 2-phenylimidazole (Curazole 2PZ (trade name, manufactured by Shikoku Kasei Co., Ltd.)) as an accelerator are stirred in an organic solvent to form an adhesive varnish. Obtained. The obtained adhesive varnish was applied onto a polyethylene terephthalate (PET) film having a thickness of 50 μm and dried by heating at 120 ° C. for 10 minutes to produce an adhesive film 1.
(Adhesive film 2)
5 parts by weight of a cresol novolac type epoxy resin (epoxy equivalent 197, molecular weight 1200, softening point 70 ° C.) as an epoxy resin, 0.5 part by mass of 3-glycidoxypropyltrimethoxysilane as an silane coupling agent, an average particle size of 1. 50 parts by mass of 0 μm silica filler, 40 parts by mass of acrylic resin (mass average molecular weight: 800,000, glass transition temperature −17 ° C.), 5 parts by weight of phenol novolac resin (hydroxyl equivalent 104, softening point 80 ° C.) as a curing agent, acceleration As an agent, 1 part of 2-phenylimidazole (Curazole 2PZ (trade name, manufactured by Shikoku Kasei Co., Ltd.)) was stirred in an organic solvent to obtain an adhesive varnish. The obtained adhesive varnish was applied on a polyethylene terephthalate (PET) film having a thickness of 50 μm, and dried by heating at 120 ° C. for 10 minutes to produce an adhesive film 2.
(Adhesive film 3)
Synthesized from 2,2'-bis [4- (4-aminophenoxy) phenyl] propane, 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride and pyromellitic anhydride instead of acrylic resin It was produced in the same manner as the adhesive film 2 except that a polyimide resin having a mass average molecular weight of 50,000 was used.
(Adhesive film 4)
Synthesized from 2,2'-bis [4- (4-aminophenoxy) phenyl] propane, 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride and pyromellitic anhydride instead of acrylic resin It was produced in the same manner as the adhesive film 1 except that a polyimide resin having a mass average molecular weight of 50,000 was used.
（第１実施例）
　粘着フィルム１～５及び接着フィルム１を、それぞれ直径３７０ｍｍ、３２０ｍｍの円形にカットし、粘着フィルムの粘着剤層と接着フィルムの接着剤層とを貼り合わせた。最後に、接着フィルムのＰＥＴフィルムを接着剤層から剥離し、表１の組合せのダイシング・ダイボンディングフィルム（実施例１～３、比較例１～２）を得た。 (First embodiment)
The pressure-sensitive adhesive films 1 to 5 and the adhesive film 1 were cut into circles having a diameter of 370 mm and 320 mm, respectively, and the pressure-sensitive adhesive layer of the pressure-sensitive adhesive film and the adhesive layer of the adhesive film were bonded together. Finally, the PET film of the adhesive film was peeled from the adhesive layer to obtain dicing die bonding films (Examples 1 to 3 and Comparative Examples 1 and 2) having combinations shown in Table 1.
＜透湿度＞
　粘着フィルム１～５について、ＪＩＳ　Ｋ７１２９－Ｃ（ガスクロマトグラフ法による水蒸気透過度測定）に基づいて透湿度を測定した。測定条件は温度２５±０．５℃、相対湿度差９０±２％とした。その結果を表１に示す。 <Moisture permeability>
For the adhesive films 1 to 5, moisture permeability was measured based on JIS K7129-C (measurement of water vapor permeability by gas chromatography). The measurement conditions were a temperature of 25 ± 0.5 ° C. and a relative humidity difference of 90 ± 2%. The results are shown in Table 1.
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000001
＜ピックアップ性試験＞
　上記実施例１～３、比較例１～２に係るダイシング・ダイボンディングフィルムを３００枚ずつ重ね、７２時間、温度２５度、湿度７０％ＲＨの雰囲気中に放置した後、それぞれ上から１０枚目のダイシングダイボンドフィルムを、厚み１００μｍ及び７５μｍのウエハに７０℃で１０秒間加熱し貼合した後、１０×１０ｍｍにダイシングした。その後、粘着剤層に紫外線を空冷式高圧水銀灯により２００ｍＪ／ｃｍ2照射した後、ウエハ中央部のチップ２５０個について、ダイボンダー装置（ＣＰＳ－１００ＦＭ（ＮＥＣマシナリー株式会社製、商品名））によるピックアップ試験を行った。粘着剤層から剥離した接着剤層が保持されたチップが、隣接するチップが付随することなくピックアップされた場合をピックアップが成功したものとし、ピックアップ成功率が９９％以上であれば良として判定して○印で表し、９９％未満の場合は不良と判定して×印で表した。これらの結果を表２に示す。 <Pickup test>
300 sheets of the dicing die bonding films according to the above Examples 1 to 3 and Comparative Examples 1 and 2 were stacked and left in an atmosphere at a temperature of 25 degrees and a humidity of 70% RH for 72 hours. The dicing die-bonding film was bonded to a wafer having a thickness of 100 μm and 75 μm by heating at 70 ° C. for 10 seconds, and then diced to 10 × 10 mm. After that, the adhesive layer was irradiated with ultraviolet rays of 200 mJ / cm 2 with an air-cooled high-pressure mercury lamp, and then a pick-up test for 250 chips in the center of the wafer using a die bonder device (CPS-100FM (trade name, manufactured by NEC Machinery Co., Ltd.)). Went. If the chip with the adhesive layer peeled off from the adhesive layer was picked up without an adjacent chip attached, the pickup was considered successful, and if the pickup success rate was 99% or more, it was judged as good. When it was less than 99%, it was judged as bad and represented by x. These results are shown in Table 2.
Figure JPOXMLDOC01-appb-T000002
Figure JPOXMLDOC01-appb-T000002
　比較例１～２では、粘着フィルムの透湿度が１０．０ｇ／ｍ2／ｄａｙを越えているため、空気中の水蒸気が外側から内側へ透過して接着剤層が吸水することにより軟化し、ダイシング時にヒゲ状の切削屑が発生して、ダブルダイによるピックアップミスが多発した。これに対して、実施例１～３では、粘着フィルムの透湿度が１０．０ｇ／ｍ2／ｄａｙ以下であり、空気中の水蒸気が透過しにくく、接着剤層の軟化が低減されているため、ダイシング時のヒゲ状の切削屑の発生が低減され、ピックアップミスが十分に減少した。 In Comparative Examples 1 and 2, since the moisture permeability of the pressure-sensitive adhesive film exceeds 10.0 g / m 2 / day, water vapor in the air permeates from the outside to the inside, and the adhesive layer softens by absorbing water. A whisker-like cutting waste was generated during dicing, and pick-up mistakes with a double die occurred frequently. On the other hand, in Examples 1 to 3, the moisture permeability of the adhesive film is 10.0 g / m 2 / day or less, water vapor in the air is difficult to permeate, and the softening of the adhesive layer is reduced. In addition, the generation of shaving-like cutting waste during dicing was reduced, and pickup errors were sufficiently reduced.
（第２実施例）
粘着フィルム１，６～７及び接着フィルム１～４を、それぞれ直径３７０ｍｍ、３２０ｍｍの円形にカットし、粘着フィルムの粘着剤層と接着フィルムの接着剤層とを貼り合わせた。最後に、接着フィルムのＰＥＴフィルムを接着剤層から剥離し、表３の組合せのダイシング・ダイボンディングフィルム（実施例４～７、比較例３～４）を得た。粘着フィルム１，６～７について、第１実施例と同様に透湿度試験を行い、全ての粘着フィルムについて透湿度が１０．０ｇ／ｍ2／ｄａｙ以下であることを確認した。 (Second embodiment)
The pressure-sensitive adhesive films 1, 6 to 7 and the adhesive films 1 to 4 were cut into circles having a diameter of 370 mm and 320 mm, respectively, and the pressure-sensitive adhesive layer of the pressure-sensitive adhesive film and the adhesive layer of the adhesive film were bonded together. Finally, the PET film of the adhesive film was peeled from the adhesive layer to obtain dicing die bonding films (Examples 4 to 7 and Comparative Examples 3 to 4) having combinations shown in Table 3. The adhesive films 1 and 6 to 7 were subjected to a moisture permeability test in the same manner as in the first example, and it was confirmed that the moisture permeability of all the adhesive films was 10.0 g / m 2 / day or less.
＜吸水率＞
　上記実施例４～７、比較例３～４に係るダイシング・ダイボンディングフィルムを、５０ｍｍ×５０ｍｍの大きさに切り出してサンプルとした。このサンプルを５０℃のオーブンで２４時間乾燥させたものを、デシケーターで室温まで冷却し重量を測定した。その後、２３±１．０℃の蒸留水中にサンプルを２４時間浸漬し、取り出してカールフィッシャー水分計により吸水率を算出した。その結果を表３に示す。 <Water absorption rate>
The dicing die bonding films according to Examples 4 to 7 and Comparative Examples 3 to 4 were cut into a size of 50 mm × 50 mm and used as samples. What dried this sample for 24 hours in 50 degreeC oven was cooled to room temperature with the desiccator, and the weight was measured. Thereafter, the sample was immersed in distilled water at 23 ± 1.0 ° C. for 24 hours, taken out, and the water absorption was calculated with a Karl Fischer moisture meter. The results are shown in Table 3.
Figure JPOXMLDOC01-appb-T000003
Figure JPOXMLDOC01-appb-T000003
＜ピックアップ性試験＞
　実施例１，４～６、比較例３～４に係るダイシング・ダイボンディングフィルムについて、上述の第１実施例と同様にピックアップ試験を行った。ただし、ウエハの厚みは１００μｍ及び５０μｍとした。ピックアップされたチップに粘着剤層から剥離した接着フィルムが保持されているものをピックアップが成功したものとし、ピックアップ成功率が９９％以上であれば良として判定して○印で表し、９９％未満の場合は不良と判定して×印で表した。これらの結果を表４に示す。 <Pickup test>
The dicing die bonding films according to Examples 1, 4 to 6 and Comparative Examples 3 to 4 were subjected to a pickup test in the same manner as in the first example. However, the thickness of the wafer was 100 μm and 50 μm. If the picked-up chip holds the adhesive film peeled off from the adhesive layer, the pick-up is considered successful, and if the pick-up success rate is 99% or more, it is judged as good and is indicated by ○, and less than 99% In the case of, it was determined to be defective and indicated by x. These results are shown in Table 4.
Figure JPOXMLDOC01-appb-T000004
Figure JPOXMLDOC01-appb-T000004
　比較例３～４は、粘着フィルムの透湿度が１０．０ｇ／ｍ2／ｄａｙ以下であるため、厚みが１００μｍのウエハについては、良好にピックアップできたが、粘着フィルムと接着剤層とを合わせた吸水率が２．０体積％を越えているため、粘着剤層と接着剤層との間の剥離性が悪く、厚みが５０μｍのウエハについてはピックアップミスが多発した。これに対して、実施例４～７では、粘着フィルムと接着剤層とを合わせた吸水率が２．０体積％以下であり、粘着剤層と接着剤層との間の剥離性が良いため、厚みが５０μｍと薄いウエハについてもピックアップミスが十分に減少した。 In Comparative Examples 3 to 4, since the moisture permeability of the adhesive film was 10.0 g / m 2 / day or less, a wafer with a thickness of 100 μm could be picked up well, but the adhesive film and the adhesive layer were combined. Further, since the water absorption exceeded 2.0% by volume, the peelability between the pressure-sensitive adhesive layer and the adhesive layer was poor, and pick-up mistakes occurred frequently for wafers having a thickness of 50 μm. On the other hand, in Examples 4 to 7, the combined water absorption of the adhesive film and the adhesive layer is 2.0% by volume or less, and the peelability between the adhesive layer and the adhesive layer is good. Also, the pick-up error was sufficiently reduced even for a thin wafer having a thickness of 50 μm.
１１：基材フィルム
１２：粘着剤層
１３：接着剤層
１４：粘着フィルム
１５：半導体ウエハ加工用テープ
２０：リングフレーム
２１：ステージ
２２：吸着ステージ
２３：突き上げ部材 11: Base film 12: Adhesive layer 13: Adhesive layer 14: Adhesive film 15: Semiconductor wafer processing tape 20: Ring frame 21: Stage 22: Adsorption stage 23: Push-up member

Claims (3)

  1. 　基材フィルムと該基材フィルム上に設けられた粘着剤層とからなる粘着フィルムであって、透湿度が１０．０ｇ／ｍ2／ｄａｙ以下であることを特徴とする粘着フィルム。 A pressure-sensitive adhesive film comprising a base film and a pressure-sensitive adhesive layer provided on the base film, wherein the moisture permeability is 10.0 g / m 2 / day or less.
  2. 　基材フィルムと該基材フィルム上に設けられた粘着剤層とからなる粘着フィルムと、前記粘着剤層上に設けられた接着剤層とを有するウエハ加工用テープであって、前記粘着フィルムの透湿度が１０．０ｇ／ｍ2／ｄａｙ以下であることを特徴とする半導体ウエハ加工用テープ。 A wafer processing tape having a pressure-sensitive adhesive film comprising a base film and a pressure-sensitive adhesive layer provided on the base film, and an adhesive layer provided on the pressure-sensitive adhesive layer, A semiconductor wafer processing tape having a moisture permeability of 10.0 g / m 2 / day or less.
  3. 　前記粘着フィルムと前記接着剤層とを合わせた吸水率が２．０体積％以下であることを特徴とする請求項２に記載の半導体ウエハ加工用テープ。 3. The semiconductor wafer processing tape according to claim 2, wherein a water absorption rate of the adhesive film and the adhesive layer is 2.0% by volume or less.
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