KR20130103624A - 단결정 기판 제조 방법 및 내부 개질층 형성 단결정 부재 - Google Patents

단결정 기판 제조 방법 및 내부 개질층 형성 단결정 부재 Download PDF

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Publication number
KR20130103624A
KR20130103624A KR1020137021348A KR20137021348A KR20130103624A KR 20130103624 A KR20130103624 A KR 20130103624A KR 1020137021348 A KR1020137021348 A KR 1020137021348A KR 20137021348 A KR20137021348 A KR 20137021348A KR 20130103624 A KR20130103624 A KR 20130103624A
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KR
South Korea
Prior art keywords
single crystal
modified layer
laser light
crystal member
layer
Prior art date
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KR1020137021348A
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English (en)
Korean (ko)
Inventor
요스케 구니시
히데키 스즈키
리카 마츠오
준이치 이케노
Original Assignee
신에츠 폴리머 가부시키가이샤
고쿠리츠다이가쿠호진 사이타마 다이가쿠
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Application filed by 신에츠 폴리머 가부시키가이샤, 고쿠리츠다이가쿠호진 사이타마 다이가쿠 filed Critical 신에츠 폴리머 가부시키가이샤
Publication of KR20130103624A publication Critical patent/KR20130103624A/ko

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/04—After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Laser Beam Processing (AREA)
KR1020137021348A 2011-02-10 2011-02-10 단결정 기판 제조 방법 및 내부 개질층 형성 단결정 부재 KR20130103624A (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2011/052950 WO2012108055A1 (ja) 2011-02-10 2011-02-10 単結晶基板製造方法および内部改質層形成単結晶部材

Publications (1)

Publication Number Publication Date
KR20130103624A true KR20130103624A (ko) 2013-09-23

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137021348A KR20130103624A (ko) 2011-02-10 2011-02-10 단결정 기판 제조 방법 및 내부 개질층 형성 단결정 부재

Country Status (3)

Country Link
JP (1) JP5875122B2 (ja)
KR (1) KR20130103624A (ja)
WO (1) WO2012108055A1 (ja)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160067781A (ko) * 2014-12-04 2016-06-14 가부시기가이샤 디스코 웨이퍼의 생성 방법
KR20160067780A (ko) * 2014-12-04 2016-06-14 가부시기가이샤 디스코 웨이퍼의 생성 방법
KR20160067783A (ko) * 2014-12-04 2016-06-14 가부시기가이샤 디스코 웨이퍼의 생성 방법
KR20160067782A (ko) * 2014-12-04 2016-06-14 가부시기가이샤 디스코 웨이퍼의 생성 방법
KR20160084800A (ko) * 2015-01-06 2016-07-14 가부시기가이샤 디스코 웨이퍼의 생성 방법
KR20160084799A (ko) * 2015-01-06 2016-07-14 가부시기가이샤 디스코 웨이퍼의 생성 방법
KR20160098054A (ko) * 2015-02-09 2016-08-18 가부시기가이샤 디스코 웨이퍼의 생성 방법
KR20160098055A (ko) * 2015-02-09 2016-08-18 가부시기가이샤 디스코 웨이퍼의 생성 방법
KR20160098053A (ko) * 2015-02-09 2016-08-18 가부시기가이샤 디스코 웨이퍼의 생성 방법
KR20160119718A (ko) * 2015-04-06 2016-10-14 가부시기가이샤 디스코 웨이퍼의 생성 방법
KR20160119716A (ko) * 2015-04-06 2016-10-14 가부시기가이샤 디스코 웨이퍼의 생성 방법
KR20160142231A (ko) * 2015-06-02 2016-12-12 가부시기가이샤 디스코 웨이퍼의 생성 방법
KR20160142232A (ko) * 2015-06-02 2016-12-12 가부시기가이샤 디스코 웨이퍼의 생성 방법
KR20160143529A (ko) * 2015-06-05 2016-12-14 가부시기가이샤 디스코 웨이퍼의 생성 방법
KR20170008163A (ko) * 2015-07-13 2017-01-23 가부시기가이샤 디스코 다결정 SiC 웨이퍼의 생성 방법
KR20170055909A (ko) * 2015-11-12 2017-05-22 가부시기가이샤 디스코 SiC 기판의 분리 방법

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JP5946112B2 (ja) * 2011-02-10 2016-07-05 国立大学法人埼玉大学 基板加工方法
JP6265522B2 (ja) * 2013-02-28 2018-01-24 国立大学法人埼玉大学 表面３次元構造部材の製造方法
JP2015032690A (ja) 2013-08-02 2015-02-16 株式会社ディスコ 積層ウェーハの加工方法
JP6180223B2 (ja) * 2013-08-06 2017-08-16 株式会社ディスコ ウェーハの製造方法
JP6395210B2 (ja) * 2014-08-26 2018-09-26 信越ポリマー株式会社 基板加工方法及び基板
JP2020141009A (ja) * 2019-02-27 2020-09-03 パナソニックＩｐマネジメント株式会社 基板材料およびレーザ加工方法
JP7196718B2 (ja) * 2019-03-26 2022-12-27 ウシオ電機株式会社 微細穴光学素子の製造方法および改質装置

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JP3628108B2 (ja) * 1996-06-10 2005-03-09 株式会社イオン工学研究所 太陽電池の製造方法
JP2005294325A (ja) * 2004-03-31 2005-10-20 Sharp Corp 基板製造方法及び基板製造装置
JP2007142000A (ja) * 2005-11-16 2007-06-07 Denso Corp レーザ加工装置およびレーザ加工方法
JP4584322B2 (ja) * 2008-03-24 2010-11-17 株式会社レーザーシステム レーザ加工方法
SG171947A1 (en) * 2008-12-05 2011-07-28 Agency Science Tech & Res A wafer cutting method and a system thereof
JP5456382B2 (ja) * 2009-06-17 2014-03-26 信越ポリマー株式会社 半導体ウェーハの製造方法及びその装置

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160067781A (ko) * 2014-12-04 2016-06-14 가부시기가이샤 디스코 웨이퍼의 생성 방법
KR20160067780A (ko) * 2014-12-04 2016-06-14 가부시기가이샤 디스코 웨이퍼의 생성 방법
KR20160067783A (ko) * 2014-12-04 2016-06-14 가부시기가이샤 디스코 웨이퍼의 생성 방법
KR20160067782A (ko) * 2014-12-04 2016-06-14 가부시기가이샤 디스코 웨이퍼의 생성 방법
KR20160084800A (ko) * 2015-01-06 2016-07-14 가부시기가이샤 디스코 웨이퍼의 생성 방법
KR20160084799A (ko) * 2015-01-06 2016-07-14 가부시기가이샤 디스코 웨이퍼의 생성 방법
KR20160098054A (ko) * 2015-02-09 2016-08-18 가부시기가이샤 디스코 웨이퍼의 생성 방법
KR20160098055A (ko) * 2015-02-09 2016-08-18 가부시기가이샤 디스코 웨이퍼의 생성 방법
KR20160098053A (ko) * 2015-02-09 2016-08-18 가부시기가이샤 디스코 웨이퍼의 생성 방법
KR20160119718A (ko) * 2015-04-06 2016-10-14 가부시기가이샤 디스코 웨이퍼의 생성 방법
KR20160119716A (ko) * 2015-04-06 2016-10-14 가부시기가이샤 디스코 웨이퍼의 생성 방법
KR20160142231A (ko) * 2015-06-02 2016-12-12 가부시기가이샤 디스코 웨이퍼의 생성 방법
KR20160142232A (ko) * 2015-06-02 2016-12-12 가부시기가이샤 디스코 웨이퍼의 생성 방법
KR20160143529A (ko) * 2015-06-05 2016-12-14 가부시기가이샤 디스코 웨이퍼의 생성 방법
KR20170008163A (ko) * 2015-07-13 2017-01-23 가부시기가이샤 디스코 다결정 SiC 웨이퍼의 생성 방법
KR20170055909A (ko) * 2015-11-12 2017-05-22 가부시기가이샤 디스코 SiC 기판의 분리 방법

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Publication number Publication date
JPWO2012108055A1 (ja) 2014-07-03
JP5875122B2 (ja) 2016-03-02
WO2012108055A1 (ja) 2012-08-16

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