KR20130093080A - 이온 전류가 감소된 예비-세정 챔버 - Google Patents

이온 전류가 감소된 예비-세정 챔버 Download PDF

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Publication number
KR20130093080A
KR20130093080A KR1020137001955A KR20137001955A KR20130093080A KR 20130093080 A KR20130093080 A KR 20130093080A KR 1020137001955 A KR1020137001955 A KR 1020137001955A KR 20137001955 A KR20137001955 A KR 20137001955A KR 20130093080 A KR20130093080 A KR 20130093080A
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KR
South Korea
Prior art keywords
volume
plasma
substrate
disposed
substrate support
Prior art date
Application number
KR1020137001955A
Other languages
English (en)
Korean (ko)
Inventor
존 씨. 포레스터
태 홍 하
뮤랄리 케이. 나라심한
진유 푸
아르빈드 선다라잔
시아오 구오
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/166,213 external-priority patent/US20110315319A1/en
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20130093080A publication Critical patent/KR20130093080A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
KR1020137001955A 2010-06-25 2011-06-23 이온 전류가 감소된 예비-세정 챔버 KR20130093080A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US35870110P 2010-06-25 2010-06-25
US61/358,701 2010-06-25
US13/166,213 US20110315319A1 (en) 2010-06-25 2011-06-22 Pre-clean chamber with reduced ion current
US13/166,213 2011-06-22
PCT/US2011/041592 WO2011163455A2 (en) 2010-06-25 2011-06-23 Pre-clean chamber with reduced ion current

Publications (1)

Publication Number Publication Date
KR20130093080A true KR20130093080A (ko) 2013-08-21

Family

ID=45372101

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137001955A KR20130093080A (ko) 2010-06-25 2011-06-23 이온 전류가 감소된 예비-세정 챔버

Country Status (4)

Country Link
JP (1) JP2013532387A (zh)
KR (1) KR20130093080A (zh)
CN (1) CN103003926B (zh)
WO (1) WO2011163455A2 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170114250A (ko) * 2016-03-24 2017-10-13 램 리써치 코포레이션 웨이퍼 내 프로세스 균일도를 제어하기 위한 방법 및 장치
KR20180019193A (ko) * 2015-06-17 2018-02-23 어플라이드 머티어리얼스, 인코포레이티드 다전극 기판 지지 조립체 및 위상 제어 시스템

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104342632B (zh) * 2013-08-07 2017-06-06 北京北方微电子基地设备工艺研究中心有限责任公司 预清洗腔室及等离子体加工设备
US9543171B2 (en) * 2014-06-17 2017-01-10 Lam Research Corporation Auto-correction of malfunctioning thermal control element in a temperature control plate of a semiconductor substrate support assembly that includes deactivating the malfunctioning thermal control element and modifying a power level of at least one functioning thermal control element
TWI670756B (zh) * 2014-12-22 2019-09-01 美商應用材料股份有限公司 藉由沉積調整來解決ｆｃｖｄ的線條彎曲
JP2017157778A (ja) * 2016-03-04 2017-09-07 東京エレクトロン株式会社 基板処理装置
JP7240958B2 (ja) * 2018-09-06 2023-03-16 東京エレクトロン株式会社 プラズマ処理装置
CN110349830B (zh) 2019-09-09 2020-02-14 北京北方华创微电子装备有限公司 等离子体系统以及应用于等离子体系统的过滤装置
FI129609B (en) 2020-01-10 2022-05-31 Picosun Oy SUBSTRATE PROCESSING EQUIPMENT

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2635267B2 (ja) * 1991-06-27 1997-07-30 アプライド マテリアルズ インコーポレイテッド Ｒｆプラズマ処理装置
JP2625072B2 (ja) * 1992-09-08 1997-06-25 アプライド マテリアルズ インコーポレイテッド 電磁ｒｆ結合を用いたプラズマ反応装置及びその方法
JPH08139070A (ja) * 1994-11-04 1996-05-31 Hitachi Tokyo Electron Co Ltd 半導体製造装置
US5968275A (en) * 1997-06-25 1999-10-19 Lam Research Corporation Methods and apparatus for passivating a substrate in a plasma reactor
US6395095B1 (en) * 1999-06-15 2002-05-28 Tokyo Electron Limited Process apparatus and method for improved plasma processing of a substrate
US6652713B2 (en) * 2001-08-09 2003-11-25 Applied Materials, Inc. Pedestal with integral shield
KR20040013170A (ko) * 2002-08-01 2004-02-14 삼성전자주식회사 애싱 장치
JP2005079539A (ja) * 2003-09-03 2005-03-24 Hitachi Ltd プラズマ処理装置
US8349128B2 (en) * 2004-06-30 2013-01-08 Applied Materials, Inc. Method and apparatus for stable plasma processing
US7780814B2 (en) * 2005-07-08 2010-08-24 Applied Materials, Inc. Wafer pre-clean reactor cable termination for selective suppression/reflection of source and bias frequency cross products
JP2007042951A (ja) * 2005-08-04 2007-02-15 Tokyo Electron Ltd プラズマ処理装置
US7658802B2 (en) * 2005-11-22 2010-02-09 Applied Materials, Inc. Apparatus and a method for cleaning a dielectric film
US7942969B2 (en) * 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
JP4971930B2 (ja) * 2007-09-28 2012-07-11 東京エレクトロン株式会社 プラズマ処理装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180019193A (ko) * 2015-06-17 2018-02-23 어플라이드 머티어리얼스, 인코포레이티드 다전극 기판 지지 조립체 및 위상 제어 시스템
KR20170114250A (ko) * 2016-03-24 2017-10-13 램 리써치 코포레이션 웨이퍼 내 프로세스 균일도를 제어하기 위한 방법 및 장치

Also Published As

Publication number Publication date
CN103003926B (zh) 2016-05-25
WO2011163455A2 (en) 2011-12-29
JP2013532387A (ja) 2013-08-15
WO2011163455A3 (en) 2012-05-31
CN103003926A (zh) 2013-03-27

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