JP2013532387A - イオン電流を低減したプレクリーンチャンバ - Google Patents

イオン電流を低減したプレクリーンチャンバ Download PDF

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Publication number
JP2013532387A
JP2013532387A JP2013516763A JP2013516763A JP2013532387A JP 2013532387 A JP2013532387 A JP 2013532387A JP 2013516763 A JP2013516763 A JP 2013516763A JP 2013516763 A JP2013516763 A JP 2013516763A JP 2013532387 A JP2013532387 A JP 2013532387A
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JP
Japan
Prior art keywords
volume
plasma
substrate
processing system
substrate processing
Prior art date
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Pending
Application number
JP2013516763A
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English (en)
Japanese (ja)
Inventor
ジョン シー フォースター
テ ホン ハ
ムラリ ケイ ナラシマン
シンユー フー
アーヴィンド スンダールラジャン
シァオシ グオ
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Applied Materials Inc
Original Assignee
Applied Materials Inc
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Filing date
Publication date
Priority claimed from US13/166,213 external-priority patent/US20110315319A1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2013532387A publication Critical patent/JP2013532387A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
JP2013516763A 2010-06-25 2011-06-23 イオン電流を低減したプレクリーンチャンバ Pending JP2013532387A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US35870110P 2010-06-25 2010-06-25
US61/358,701 2010-06-25
US13/166,213 US20110315319A1 (en) 2010-06-25 2011-06-22 Pre-clean chamber with reduced ion current
US13/166,213 2011-06-22
PCT/US2011/041592 WO2011163455A2 (en) 2010-06-25 2011-06-23 Pre-clean chamber with reduced ion current

Publications (1)

Publication Number Publication Date
JP2013532387A true JP2013532387A (ja) 2013-08-15

Family

ID=45372101

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013516763A Pending JP2013532387A (ja) 2010-06-25 2011-06-23 イオン電流を低減したプレクリーンチャンバ

Country Status (4)

Country Link
JP (1) JP2013532387A (zh)
KR (1) KR20130093080A (zh)
CN (1) CN103003926B (zh)
WO (1) WO2011163455A2 (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016006875A (ja) * 2014-06-17 2016-01-14 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 半導体基板支持アセンブリの温度制御板における動作不良熱制御素子の自動修正
JP2016531436A (ja) * 2013-08-07 2016-10-06 北京北方微▲電▼子基地▲設▼▲備▼工▲芸▼研究中心有限▲責▼任公司 プレクリーニングチャンバおよび半導体処理装置
JP2017157778A (ja) * 2016-03-04 2017-09-07 東京エレクトロン株式会社 基板処理装置

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI670756B (zh) * 2014-12-22 2019-09-01 美商應用材料股份有限公司 藉由沉積調整來解決ｆｃｖｄ的線條彎曲
US10153139B2 (en) * 2015-06-17 2018-12-11 Applied Materials, Inc. Multiple electrode substrate support assembly and phase control system
US20170278679A1 (en) * 2016-03-24 2017-09-28 Lam Research Corporation Method and apparatus for controlling process within wafer uniformity
JP7240958B2 (ja) * 2018-09-06 2023-03-16 東京エレクトロン株式会社 プラズマ処理装置
CN110349830B (zh) 2019-09-09 2020-02-14 北京北方华创微电子装备有限公司 等离子体系统以及应用于等离子体系统的过滤装置
FI129609B (en) 2020-01-10 2022-05-31 Picosun Oy SUBSTRATE PROCESSING EQUIPMENT

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05206072A (ja) * 1991-06-27 1993-08-13 Applied Materials Inc 誘導ｒｆ結合を用いたプラズマ加工装置とその方法
JPH06112166A (ja) * 1992-09-08 1994-04-22 Applied Materials Inc 電磁ｒｆ結合を用いたプラズマ反応装置及びその方法
JPH08139070A (ja) * 1994-11-04 1996-05-31 Hitachi Tokyo Electron Co Ltd 半導体製造装置
JP2002506570A (ja) * 1997-06-25 2002-02-26 ラム・リサーチ・コーポレーション 基板をパッシベートするためのプラズマ反応炉
KR20040013170A (ko) * 2002-08-01 2004-02-14 삼성전자주식회사 애싱 장치
US20060000805A1 (en) * 2004-06-30 2006-01-05 Applied Materials, Inc. Method and apparatus for stable plasma processing
JP2007042951A (ja) * 2005-08-04 2007-02-15 Tokyo Electron Ltd プラズマ処理装置
US20080295872A1 (en) * 2007-05-30 2008-12-04 Applied Materials, Inc. Substrate cleaning chamber and components

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6395095B1 (en) * 1999-06-15 2002-05-28 Tokyo Electron Limited Process apparatus and method for improved plasma processing of a substrate
US6652713B2 (en) * 2001-08-09 2003-11-25 Applied Materials, Inc. Pedestal with integral shield
JP2005079539A (ja) * 2003-09-03 2005-03-24 Hitachi Ltd プラズマ処理装置
US7780814B2 (en) * 2005-07-08 2010-08-24 Applied Materials, Inc. Wafer pre-clean reactor cable termination for selective suppression/reflection of source and bias frequency cross products
US7658802B2 (en) * 2005-11-22 2010-02-09 Applied Materials, Inc. Apparatus and a method for cleaning a dielectric film
JP4971930B2 (ja) * 2007-09-28 2012-07-11 東京エレクトロン株式会社 プラズマ処理装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05206072A (ja) * 1991-06-27 1993-08-13 Applied Materials Inc 誘導ｒｆ結合を用いたプラズマ加工装置とその方法
JPH06112166A (ja) * 1992-09-08 1994-04-22 Applied Materials Inc 電磁ｒｆ結合を用いたプラズマ反応装置及びその方法
JPH08139070A (ja) * 1994-11-04 1996-05-31 Hitachi Tokyo Electron Co Ltd 半導体製造装置
JP2002506570A (ja) * 1997-06-25 2002-02-26 ラム・リサーチ・コーポレーション 基板をパッシベートするためのプラズマ反応炉
KR20040013170A (ko) * 2002-08-01 2004-02-14 삼성전자주식회사 애싱 장치
US20060000805A1 (en) * 2004-06-30 2006-01-05 Applied Materials, Inc. Method and apparatus for stable plasma processing
JP2007042951A (ja) * 2005-08-04 2007-02-15 Tokyo Electron Ltd プラズマ処理装置
US20080295872A1 (en) * 2007-05-30 2008-12-04 Applied Materials, Inc. Substrate cleaning chamber and components
JP2010528488A (ja) * 2007-05-30 2010-08-19 アプライド マテリアルズ インコーポレイテッド 基板洗浄チャンバ及び構成部品

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016531436A (ja) * 2013-08-07 2016-10-06 北京北方微▲電▼子基地▲設▼▲備▼工▲芸▼研究中心有限▲責▼任公司 プレクリーニングチャンバおよび半導体処理装置
JP2016006875A (ja) * 2014-06-17 2016-01-14 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 半導体基板支持アセンブリの温度制御板における動作不良熱制御素子の自動修正
JP2017157778A (ja) * 2016-03-04 2017-09-07 東京エレクトロン株式会社 基板処理装置

Also Published As

Publication number Publication date
CN103003926B (zh) 2016-05-25
WO2011163455A2 (en) 2011-12-29
WO2011163455A3 (en) 2012-05-31
CN103003926A (zh) 2013-03-27
KR20130093080A (ko) 2013-08-21

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