KR20130067216A - Ultraviolet light-emitting device - Google Patents

Ultraviolet light-emitting device Download PDF

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Publication number
KR20130067216A
KR20130067216A KR1020120124003A KR20120124003A KR20130067216A KR 20130067216 A KR20130067216 A KR 20130067216A KR 1020120124003 A KR1020120124003 A KR 1020120124003A KR 20120124003 A KR20120124003 A KR 20120124003A KR 20130067216 A KR20130067216 A KR 20130067216A
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South Korea
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layer
semiconductor layer
conductive semiconductor
light emitting
region
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KR1020120124003A
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Korean (ko)
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KR101961825B1 (en
Inventor
홍이랑
최운경
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엘지이노텍 주식회사
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Priority to EP12196574.3A priority Critical patent/EP2605295A3/en
Priority to US13/712,422 priority patent/US9786814B2/en
Priority to JP2012271867A priority patent/JP6117541B2/en
Priority to CN201210540732.0A priority patent/CN103165784B/en
Priority to TW101147243A priority patent/TWI585998B/en
Publication of KR20130067216A publication Critical patent/KR20130067216A/en
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Publication of KR101961825B1 publication Critical patent/KR101961825B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Led Devices (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)

Abstract

The ultraviolet light emitting device includes a substrate including a first region and a second region surrounded by the first region, a first conductive semiconductor layer disposed below the substrate, an active layer and an active layer disposed below the first conductive semiconductor layer. The light emitting structure includes a second conductive semiconductor layer disposed below, and a reflective layer disposed below the first conductive semiconductor layer. The first region includes a first conductive semiconductor layer, and the second region includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. The reflective layer is disposed under the first conductivity type semiconductor layer in the first region.

Description

Ultraviolet light-emitting device

The embodiment relates to an ultraviolet light emitting device.

Light-emitting diodes (LEDs) are semiconductor light emitting devices that convert current into light.

BACKGROUND ART A semiconductor light emitting device can obtain light having high luminance and is widely used as a light source for a display, a light source for an automobile, and a light source for an illumination.

Recently, an ultraviolet light emitting device capable of outputting ultraviolet rays has been proposed.

Ultraviolet light is emitted to the outside of the ultraviolet light emitting device, but a large amount of ultraviolet light is not emitted to the outside and absorbed or extinguished inside the ultraviolet light emitting device, there is a problem of low light extraction efficiency.

The embodiment provides an ultraviolet light emitting device having improved light extraction efficiency.

According to an embodiment, an ultraviolet light emitting device includes: a substrate including a first region and a second region surrounded by the first region; A light emitting structure including a first conductive semiconductor layer disposed under the substrate, an active layer disposed under the first conductive semiconductor layer, and a second conductive semiconductor layer disposed under the active layer; And a reflective layer disposed under the first conductive semiconductor layer, wherein the first region includes the first conductive semiconductor layer, and the second region includes the first conductive semiconductor layer, the active layer, and the A second conductive semiconductor layer is provided, wherein the reflective layer is disposed under the first conductive semiconductor layer in the first region.

According to an embodiment, the light emitting device package, the body; First and second lead electrodes disposed on the body; A light emitting device disposed on any one of the first and second lead electrodes, the light emitting device according to claim 1 to 13; And a molding member arranged to surround the light emitting element.

The embodiment forms the first reflective layer on the back surface or the first region of the first conductivity type semiconductor layer, thereby reflecting the ultraviolet light reflected downward by the upper surface of the substrate to the upper direction, thereby remarkably improving the light extraction efficiency. You can.

The embodiment forms a second reflective layer on the rear surface of the second conductivity type semiconductor layer, thereby reflecting the ultraviolet light reflected downward by the upper surface of the substrate or the ultraviolet light traveling downward from the active layer to the upper direction, thereby Extraction efficiency can be significantly improved.

In an embodiment, the ohmic layer is formed on the rear surface of the first conductive semiconductor layer to supply power to the first conductive semiconductor layer more smoothly, and further, the current flows in a lateral direction within the first conductive semiconductor layer. In this case, the luminous efficiency can be improved and uniform ultraviolet light can be ensured.

1 is a bottom view of the ultraviolet light emitting device according to the first embodiment.
FIG. 2 is a cross-sectional view of the ultraviolet light emitting device of FIG. 1.
3 is a diagram illustrating a state in which ultraviolet light is emitted from the ultraviolet light emitting device of FIG. 1.
4 is a bottom view of the ultraviolet light emitting device according to the second embodiment.
5 is a cross-sectional view illustrating the ultraviolet light emitting device of FIG. 4.
6 is a bottom view of the ultraviolet light emitting device according to the third embodiment.
FIG. 7 is a cross-sectional view of the ultraviolet light emitting device of FIG. 6.
8 is a bottom view of the ultraviolet light emitting device according to the fourth embodiment.
9 is a bottom view of the ultraviolet light emitting device according to the fifth embodiment.
10 is a cross-sectional view showing a light emitting device package according to the embodiment.

In describing an embodiment according to the invention, in the case of being described as being formed "above" or "below" each element, the upper (upper) or lower (lower) Directly contacted or formed such that one or more other components are disposed between the two components. In addition, when expressed as "up (up) or down (down)" may include the meaning of the down direction as well as the up direction based on one component.

The ultraviolet light emitting device described below is limited to the flip type ultraviolet light emitting device having a substrate disposed thereon and the first and second electrodes 27 and 29 disposed below.

The following ultraviolet light emitting device generates, but is not limited to, deep ultraviolet light of 240 nm to 360 nm.

1 is a bottom view of the ultraviolet light emitting device according to the first embodiment, and FIG. 2 is a cross-sectional view of the ultraviolet light emitting device of FIG. 1.

1 and 2, the ultraviolet light emitting device 10 according to the first embodiment may include a substrate 11, a first conductive semiconductor layer 15, an active layer 17, and a second conductive semiconductor layer 19. ), First and second reflective layers 21 and 23, and first and second electrodes 27 and 29.

The ultraviolet light emitting device 10 according to the first embodiment may be a flip type light emitting device, but is not limited thereto.

The light emitting structure 20 may be formed by the first conductive semiconductor layer 15, the active layer 17, and the second conductive semiconductor layer 19.

The ultraviolet light emitting device 10 may reduce the lattice mismatch caused by the lattice constant difference between the substrate 11 and the first conductivity-type semiconductor layer 15, and thus, the substrate 11 and the first conductivity-type semiconductor. A buffer layer 13 may be further included between the layers 15, but is not limited thereto.

Defects, for example, cracks, in the first conductivity type semiconductor layer 15, the active layer 17, and the second conductivity type semiconductor layer 19 formed on the substrate 11 by the buffer layer 13. Voids, grains and bowing do not occur.

Although not shown, an undoped semiconductor layer containing no dopant may be further included between the buffer layer 13 and the first conductivity-type semiconductor layer 15, but is not limited thereto.

The buffer layer 13, the first conductive semiconductor layer 15, the active layer 17, and the second conductive semiconductor layer 19 may be formed of a II-VI compound semiconductor material, but are not limited thereto. .

The compound semiconductor material may include, for example, Al, In, Ga, and N, but is not limited thereto.

The substrate 11 may be formed of a material having excellent thermal conductivity and / or transmittance, but is not limited thereto. For example, the substrate 11 may be formed of at least one selected from the group consisting of sapphire (Al 2 O 3 ), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, but is not limited thereto. .

The first conductivity type semiconductor layer 15 may be formed under the substrate 11 or the buffer layer 13.

The first conductive semiconductor layer 15 may be, for example, an n-type semiconductor layer including an n-type dopant, but is not limited thereto. The first conductive semiconductor layer 15 may be formed of a semiconductor material having a composition formula of In x Al y Ga 1- xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). For example, it may include, but is not limited to, at least one selected from the group consisting of InAlGaN, GaN, AlGaN, InGaN, AlN, InN, and AlInN. The n-type dopant may include Si, Ge, or Sn, but is not limited thereto.

The first conductivity type semiconductor layer 15 serves as a conductive layer for supplying a first carrier, for example, electrons, to the active layer 17, and from the second conductivity type semiconductor layer 19, the It may serve as a barrier layer that is supplied to the active layer 17, that is, prevents the second carrier, for example, holes, from falling into the buffer layer 13.

As the dopant having a high concentration is doped into the first conductive semiconductor layer 15, the first conductive semiconductor layer 15 may serve as a conductive layer through which electrons may move freely.

The first conductive semiconductor layer 15 is formed of a compound semiconductor material having a band gap equal to or greater than that of the active layer 17, thereby preventing a hole of the active layer 17 from passing through the buffer layer 13. Can act as

The active layer 17 may be formed under the first conductivity type semiconductor layer 15.

For example, the active layer 17 may recombine electrons supplied from the first conductive semiconductor layer 15 and holes supplied from the second conductive semiconductor layer 19 to emit ultraviolet light. In order to generate ultraviolet light, the active layer 17 should have at least a wide bandgap. For example, according to the first embodiment, the active layer 17 may generate deep ultraviolet light having a wavelength of 240 nm to 360 nm or less, but is not limited thereto.

The active layer 17 may include any one of a single quantum well structure (SQW), a multiple quantum well structure (MQW), a quantum dot structure, and a quantum line structure.

The active layer 19 may repeatedly form a group II-VI compound semiconductor having a band gap of an energy band for generating ultraviolet light at a cycle of a well layer and a barrier layer, but is not limited thereto.

For example, it may be formed by a period of the InGaN well layer / GaN barrier layer, a period of the InGaN well layer / AlGaN barrier layer, or a period of the InGaN well layer / InGaN barrier layer. The band gap of the barrier layer may be larger than the band gap of the well layer. The second conductive semiconductor layer 19 may be formed under the active layer 17.

The second conductive semiconductor layer 19 may be, for example, a p-type semiconductor layer including a p-type dopant, but is not limited thereto. The second conductive semiconductor layer 19 may be formed of a semiconductor material having a composition formula of In x Al y Ga 1- xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). For example, it may include, but is not limited to, at least one selected from the group consisting of InAlGaN, GaN, AlGaN, InGaN, AlN, InN, and AlInN. The p-type dopant may include Mg, Zn, Ca, Sr or Ba, but is not limited thereto.

The second conductive semiconductor layer 19 may serve as a conductive layer for supplying holes to the active layer 17.

The dopant having a high concentration may be doped into the second conductive semiconductor layer 19 to serve as a conductive layer through which holes may freely move.

A third conductivity type semiconductor layer is formed between the active layer 17 and the second conductivity type semiconductor layer 19 to prevent electrons of the active layer 17 from falling into the second conductivity type semiconductor layer 19. However, the present invention is not limited thereto.

In order to more reliably separate from the third conductivity type semiconductor layer, the active layer 17 and the second conductivity type so as to prevent electrons from the active layer 17 from being transferred to the second conductivity type semiconductor layer 19. An electron blocking layer may be formed between the semiconductor layer 19 or the third conductive semiconductor layer, but is not limited thereto.

For example, the third conductive semiconductor layer and the electron blocking layer may be formed of AlGaN, but are not limited thereto. For example, the electron blocking layer may include at least the second conductive semiconductor layer or the third conductive semiconductor. It may have a bandgap larger than the bandgap of the layer, but is not limited thereto.

For example, when the third conductivity type semiconductor layer and the electron blocking layer are formed of AlGaN, the electron blocking layer is formed in the third layer so that the electron blocking layer has a larger band gap than the third conductivity type semiconductor layer. It may have a higher Al content than the conductive semiconductor layer, but is not limited thereto.

In the flip type ultraviolet light emitting structure, ultraviolet light preferably travels in the lateral direction to the front direction of the substrate 11 side.

In the flip type ultraviolet light emitting structure, ultraviolet light generated in the active layer 17 proceeds in all directions.

Some of the ultraviolet light may travel in a lower direction in which the second conductivity-type semiconductor layer 19 is located, without traveling in an upper direction or a forward direction in which the substrate 11 is located. If the light traveling in the downward direction is not allowed to proceed in the forward direction, the light may be absorbed or dissipated in the ultraviolet light emitting device 10, resulting in a significant decrease in light extraction efficiency.

In particular, as shown in FIG. 3, even when the ultraviolet light proceeds toward the upper side of the substrate 11 side, the ultraviolet light is emitted from the substrate 11 due to the difference between the refractive index of the substrate 11 and the refractive index of air and the wavelength of the ultraviolet light. Although it is emitted to the outside through the upper surface of the portion of the ultraviolet light is reflected from the upper surface of the substrate 11 proceeds in the lateral direction or lower direction is eventually absorbed or disappeared in the ultraviolet light emitting device (10).

In order to solve this problem, the first embodiment includes first and second reflective layers 21 and 23 to reflect ultraviolet light propagated downward in the active layer 17 in the upper direction, and to the upper side in the active layer 17. The UV light reflected in the upper surface of the substrate 11 may be reflected in the upper direction again.

The first reflective layer 21 may be formed on the rear surface of the first conductive semiconductor layer 15, and the second reflective layer 23 may be formed on the rear surface of the second conductive semiconductor layer 19. have.

In order to allow the first reflective layer 21 to be formed on the rear surface of the first conductive semiconductor layer 15, the first layer covered with the active layer 17 and the second conductive semiconductor layer 19 1 The conductive semiconductor layer 15 should be exposed.

That is, the second conductive semiconductor layer 19 and the active layer 17 may be mesa-etched sequentially so that the first conductive semiconductor layer 15 is exposed.

The first conductive semiconductor layer 15 may also be partially etched by mesa etching, but is not limited thereto.

The first conductive semiconductor layer 15 exposed by mesa etching is referred to as a first region 41, and the active layer 17, the second conductive semiconductor layer 19, or mesa etching that remain as it is without mesa etching. In addition to the unexposed first conductive semiconductor layer 15, the active region 17 and the second conductive semiconductor layer 19 corresponding to the unexposed first conductive semiconductor layer 15 may be formed in the second region 43. Let's call it). The second region 43 may be referred to as a light emitting region because light is generated in the active layer 17, and the first region 41 may be referred to as a non-light emitting region because no light is generated. Do not.

The first region 41 may include grooves from which portions of the second conductive semiconductor layer 19, the active layer 17, and the first conductive semiconductor layer 15 are removed. That is, the groove may be formed at least as deep as the thickness of the active layer 17 and the second conductive semiconductor layer 19. Accordingly, the groove may be formed along the circumference of the second area 43, that is, the emission area, but is not limited thereto.

The first and second regions 41 and 43 may be defined on the substrate 11. Accordingly, a first conductivity type semiconductor layer 15 is formed on the first region 41 of the substrate 11, and a first conductivity type semiconductor layer () is formed on the second region 43 of the substrate 11. 15), the active layer 17 and the second conductivity type semiconductor layer 19 may be formed. In this case, the rear surface of the first conductivity-type semiconductor layer 15 of the second region 43 may protrude downward with respect to the rear surface of the first conductivity-type semiconductor layer 15 of the first region 41. However, this is not limitative.

As shown in FIG. 1, the second region 43 may be formed in a cross shape, but is not limited thereto.

For example, the second region 43 may be formed in a circular shape (FIG. 8) or a star shape (FIG. 9).

Typically, the second region 43 has a rectangular shape. Compared to the quadrangular shape, the cross shape, the circular shape, and the star shape may further increase the area of the side surface of the active layer 17 exposed to the outside, thereby further improving light extraction efficiency.

The first reflective layer 21 may be formed on the rear surface of the first conductive semiconductor layer 15, that is, on the first region 41.

For example, the first reflective layer 21 may be formed in the entire area of the first conductive semiconductor layer 15 exposed to the outside.

In addition, in order to avoid electrical short between the first and second conductivity-type semiconductor layers 15 and 19 by the first reflecting layer 21, the end of the first reflecting layer 21 has a second region 43. ) May be spaced apart from the end of the etched first conductive semiconductor layer 15 or the active layer 17.

In order to completely remove the electrical short between the first and second conductivity-type semiconductor layers 15 and 19 by the first reflective layer 21, as shown in FIG. Although the protective layer 31 may be formed on the side of the first conductive semiconductor layer 15, the side of the active layer 17, the side of the second conductive semiconductor layer 19, and the side of the second reflective layer 23. This is not limitative.

In addition, the protective layer 31 may be a partial region of the rear surface of the first conductivity-type semiconductor layer 15 of the first region 41, a partial region of the rear surface of the first reflective layer 21, and a second region 43. It may be formed in a partial region of the back surface of the formulation 2 reflective layer (23) of, but is not limited thereto.

In other words, the protective layer 31 may be formed along the circumferences of the etched light emitting structures, that is, the sides of the first conductive semiconductor layer 15, the active layer 17, and the second conductive semiconductor layer 19. However, this is not limitative.

The first reflective layer 21 may serve to reflect ultraviolet light traveling from the active layer 17 to the substrate 11 and reflected by an upper surface of the substrate 11 and advanced downward. It is not limited.

Ultraviolet light generated in the active layer 17 may travel in all directions, and a part of the ultraviolet light may travel upward or forward with the substrate 11. The ultraviolet light traveling to the substrate 11 may be emitted to the outside through the upper surface of the substrate 11, but a portion of the ultraviolet light may be reflected by the upper surface of the substrate 11 and proceed downward. The ultraviolet light propagated in the downward direction may be reflected by the first reflective layer 21 again and proceed upward, and may be emitted to the outside through the upper surface of the substrate 11 or through the side direction.

In the case of ultraviolet light having a narrow main wavelength band, the ultraviolet light reflected by the upper surface of the substrate 11 to the inside is so large that it cannot be ignored. In addition, the first region 41 to which the first conductive semiconductor layer 15 is exposed may occupy a relatively larger area than the second region 43 to which the first conductive semiconductor layer 15 is not exposed. have. That is, the area of the first region 41 may be larger than the area of the second region 43. In this case, the degradation of the light extraction efficiency due to the disappearance of the ultraviolet light reflected by the upper surface of the substrate 11 can be a serious problem.

According to the first exemplary embodiment, ultraviolet rays reflected downward by the upper surface of the substrate 11 by forming the first reflective layer 21 on the rear surface or the first region 41 of the first conductive semiconductor layer 15. The light can be reflected again in the upper direction or the lateral direction, so that the light extraction efficiency can be significantly improved.

Meanwhile, a second reflective layer 23 may be formed on the rear surface of the second conductive semiconductor layer 19. In other words, the second reflective layer 23 may be formed on the rear surface of the second conductive semiconductor layer 19 corresponding to the first conductive semiconductor layer 15 that is not exposed by mesa etching.

As shown in FIG. 3, the second reflective layer 23 may serve to reflect ultraviolet light propagated downward from the active layer 17 in an upward direction.

The second reflecting layer 23 is reflected by the upper surface of the substrate 11 and proceeds downward, and the ultraviolet light passing through the active layer 17 and the second conductive semiconductor layer 19 back to the upper direction. It can serve to reflect.

In addition, the distance between the second reflective layer 23 and the active layer 17 may be greater than the distance between the first reflective layer 21 and the active layer 17, but is not limited thereto.

Although not shown, a transparent conductive layer may be formed between the second conductive semiconductor layer 19 and the second reflective layer 23, but is not limited thereto. The transparent conductive layer may have a current spreading function for diffusing the current from the second electrode 29 laterally and an ohmic contact function for easily injecting the current into the second conductive semiconductor layer 19. However, this is not limitative.

Examples of the transparent conductive layer include ITO, IZO (In-ZnO), GZO (Ga-ZnO), AZO (Al-ZnO), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), IrOx, RuOx. At least one selected from the group consisting of RuOx / ITO, Ni / IrOx / Au and Ni / IrOx / Au / ITO may be used, but is not limited thereto.

In the first embodiment, the second reflective layer 23 is formed on the rear surface of the second conductivity-type semiconductor layer 19, so that the ultraviolet light reflected from the upper surface of the substrate 11 and the active layer 17 are reflected downward. The ultraviolet light traveling in the lower direction is reflected again in the upper direction, whereby the light extraction efficiency can be significantly improved.

The first reflective layer 21 and the second reflective layer 23 may be formed of a material having excellent reflectivity, but are not limited thereto.

The first and second reflective layers 21 and 23 may be formed of the same material or different materials.

The first and second reflective layers 21 and 23 may be formed of a single layer or a plurality of layers.

The first and second reflective layers 21 and 23 may be formed of, for example, a metal material having excellent reflectivity and conductivity, and include Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, One or an alloy thereof selected from the group consisting of Hf may be included, but is not limited thereto.

For example, the first and second reflective layers 21 and 23 may be formed of Al having excellent reflection characteristics with respect to ultraviolet light, but is not limited thereto.

For example, the first reflective layer 21 may be formed of aluminum (Al), and the second reflective layer 23 may be formed of an alloy of Al / Ni, but is not limited thereto.

As a result of the experiment, when aluminum (Al) was used as the first reflective layer 21, the light extraction efficiency of the ultraviolet light emitting device 10 according to the first embodiment was 16.4%, whereas silver (1) was used as the first reflective layer 21. In the case of using Ag), the light extraction efficiency of the ultraviolet light emitting device 10 according to the first embodiment may be 13.8%.

The first electrode 27 may be formed on the first reflective layer 21, and the second electrode 29 may be formed on the second reflective layer 23.

The first and second electrodes 27 and 29 may be formed of the same material or different materials.

The first and second electrodes 27 and 29 may be formed of a single layer or a plurality of layers.

The first and second electrodes 27 and 29 may be formed of a metal material having excellent electrical conductivity, for example, aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), or platinum (Pt). , Gold (Au), tungsten (W), copper (Cu) and molybdenum (Mo) may include one or an alloy thereof, but is not limited thereto.

The first electrode 27 may be formed in at least one or more regions of the first reflective layer 21 of the first region 41, but is not limited thereto.

Although not shown, the first electrode 27 may be formed in the entire region of the upper surface of the first reflective layer 21 of the first region 41, but is not limited thereto.

The first reflective layer 21 may also serve as a conductive layer for supplying power as well as a reflective layer for reflecting ultraviolet light. In this case, the first electrode 27 may not be formed, but is not limited thereto.

The second reflective layer 23 may serve as a conductive layer for supplying power as well as a reflective layer for reflecting ultraviolet light. In this case, the second electrode 29 may not be formed, but is not limited thereto.

The first and second electrodes 27 and 29 may have a circular shape, but are not limited thereto.

4 is a bottom view of the ultraviolet light emitting device according to the second embodiment, and FIG. 5 is a cross-sectional view of the ultraviolet light emitting device of FIG. 4.

The second embodiment is almost the same as the first embodiment except for the ohmic layer 25.

In the second embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, and further description thereof will be omitted.

4 and 5, the ultraviolet light emitting device 10A according to the second embodiment may include a substrate 11, a first conductive semiconductor layer 15, an active layer 17, and a second conductive semiconductor layer 19. ), An ohmic layer 25, first and second reflective layers 21 and 23, and first and second electrodes 27 and 29.

The ohmic layer 25 may be formed between the first reflective layer 21 and the first reflective layer 21.

The ohmic layer 25 may be formed in the first region 41 defined by the first conductivity type semiconductor layer 15 exposed to the outside by mesa etching.

As the ohmic layer 25, a transparent conductive material may be used. For example, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IZAO), and IGZO ( indium gallium zinc oxide (IGTO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx / ITO, Ni, Ag, Ni / IrOx At least one selected from the group consisting of / Au and Ni / IrOx / Au / ITO may be used. The ohmic layer 25 corresponds to the first conductivity-type semiconductor layer 15 that is not exposed to the outside by mesa etching. Although it may have a lumped structure formed along the circumference of the second region 43 defined by the second conductivity type semiconductor layer 19, the present invention is not limited thereto. In other words, the ohmic layer 25 may be formed on the first conductivity type semiconductor layer 15 along the circumference of the light emitting structure 20.

For example, the ohmic layer 25 may be formed adjacent to the side surface of the active layer 17 of the second region 43.

The ohmic layer 25 may be formed to be spaced apart from the side surface of the active layer 17 of the second region 43.

The distance d between the ohmic layer 25 and the second region 43 may be about 1 μm to about 10 μm, but is not limited thereto.

Since the first conductive semiconductor layer 15 is thick and formed at the side of the light emitting structure 20 of the ohmic layer 25, the ohmic layer 25 is formed from the active layer 17. Can be spaced away. Therefore, in order to supply current to the active layer quickly, the ohmic layer 25 is preferably formed as close as possible to the active layer 17.

Although not shown, if the electrical short with the active layer 17 does not occur, the ohmic layer 25 may be formed to contact the side of the second conductivity-type semiconductor layer. In this case, the first conductive semiconductor layer 15 may be etched deeper so that the rear surface of the first conductive semiconductor layer 15 is spaced apart from the side surface of the active layer 17.

The ohmic layer 25 may be formed in a bar shape along the circumference of the second region 43.

The width w of the ohmic layer 25 may be about 5 μm to about 30 μm, but the embodiment is not limited thereto.

The ratio of the area of the ohmic layer 25 to the area of the first reflective layer 21 may be greater than or equal to 1, but is not limited thereto.

Alternatively, the ohmic layer 25 may be formed in the entire region of the first conductive semiconductor layer 15 of the first region 41, but is not limited thereto.

In the second embodiment, the ohmic layer 25 is formed on the rear surface of the first conductive semiconductor layer 15 to supply power to the first conductive semiconductor layer 15 more smoothly. By having a function of current spreading which allows current to flow in a wider direction in the semiconductor layer 15, it is possible to improve luminous efficiency and to secure uniform ultraviolet light.

The first reflective layer 21 may be formed to cover both the side surface and the rear surface of the ohmic layer 25. In other words, the first reflective layer 21 may be formed to surround the ohmic layer 25. By bringing the ohmic layer 25 into surface contact with the first reflective layer 21 as much as possible, power from the first electrode 27 passes through the first reflective layer 21 to the side and back of the ohmic layer 25. The power supply may be supplied to the first conductive semiconductor layer 15 more smoothly.

Although not shown, the first reflective layer 21 may be formed to overlap a portion of the rear surface of the ohmic layer 25, but the embodiment is not limited thereto. In other words, the first reflective layer 21 may not be formed on the side of the first reflective layer 21 adjacent to the side of the first conductivity-type semiconductor layer 15 of the second region 43.

6 is a bottom view of the ultraviolet light emitting device according to the third embodiment, and FIG. 7 is a cross-sectional view of the ultraviolet light emitting device of FIG. 6.

The third embodiment is almost the same as the second embodiment except for the protective layer 31.

In the third embodiment, the same components as those of the first and second embodiments are denoted by the same reference numerals, and detailed description thereof will be omitted.

6 and 7, the ultraviolet light emitting device 10B according to the third embodiment may include a substrate 11, a first conductive semiconductor layer 15, an active layer 17, and a second conductive semiconductor layer 19. ), The ohmic layer 25, the first and second reflective layers 21 and 23, the protective layer 31, and the first and second electrodes 27 and 29.

As described above in the first embodiment, in order to completely remove the electrical short between the first and second conductivity-type semiconductor layers 15 and 19 by the first reflective layer 21, the second region 43 The protective layer 31 may be formed on the side surface of the first conductive semiconductor layer 15, the side surface of the active layer 17, and the side surface of the second conductive semiconductor layer 19 exposed to the outside. It is not limited.

The second region 43 may include a first conductive semiconductor layer 15 that is not etched by mesa etching, and an active layer 17 and a second conductive semiconductor layer corresponding to the first conductive semiconductor layer 15. 19).

The first region 41 may refer to the first conductive semiconductor layer 15 that is etched by mesa etching and exposed to the outside.

The first area 41 may be a non-light emitting area, and the second area 43 may be a light emitting area.

The protective layer 31 is a first conductive semiconductor layer of the first region 41 between the first reflective layer 21 and the side surface of the first conductive semiconductor layer 15 of the second region 43. It may be formed on the back of the (15).

The passivation layer may be a partial region of the rear surface of the first conductivity-type semiconductor layer 15 of the first region 41, a partial region of the first reflective layer 21, a side surface of the light emitting structure 20, that is, the second region. In addition to the side surface of the first conductivity-type semiconductor layer 15 of 43, the side surface of the active layer 17, the side surface of the second conductivity-type semiconductor layer 19, and the side surface of the second reflective layer 23, the second reflective layer ( 23 may be formed in a partial region of the rear surface.

The protective layer 31 may be formed of a material having excellent transparency and low conductivity or an insulating material, for example, SiO 2 , Si x O y , Si 3 N 4 , Si x N y , Al 2 O 3, and TiO 2 . At least one selected from the group consisting of, but is not limited thereto.

10 is a cross-sectional view showing a light emitting device package according to the embodiment.

Referring to FIG. 10, the light emitting device package according to the embodiment may include a body 330, a first lead frame 310 and a second lead frame 320 installed on the body 330, and the body 330. A light emitting device 10 according to the first to third embodiments, which is installed and supplied with power from the first lead frame 310 and the second lead frame 320, and surrounds the light emitting device 10. It includes a molding member 340.

The body 330 may include a silicon material, a synthetic resin material, or a metal material, and an inclined surface may be formed around the light emitting device 10.

The first lead frame 310 and the second lead frame 320 are electrically separated from each other, and provide power to the light emitting device 10.

In addition, the first and second lead frames 310 and 320 may increase light efficiency by reflecting light generated from the light emitting device 10, and discharge heat generated from the light emitting device 10 to the outside. You can also do

The light emitting device 10 may be installed on any one of the first lead frame 310, the second lead frame 320, and the body 330. The light emitting device 10 may be formed by a wire method, a die bonding method, or the like. 2 may be electrically connected to the lead frames 310 and 320, but is not limited thereto.

In the embodiment, the light emitting device 10 according to the first embodiment is illustrated, and the first and second lead frames 310 and 320 are electrically connected to each other through two wires 350. The light emitting device 10 according to the embodiment may be electrically connected to the first and second lead frames 310 and 320 without the wire 350. In the light emitting device 10 according to the third embodiment, one wire 350 may be used. ) May be electrically connected to the first and second lead frames 310 and 320.

The molding member 340 may surround the light emitting device 10 to protect the light emitting device 10. In addition, the molding member 340 may include a phosphor to change the wavelength of the light emitted from the light emitting device 10.

In addition, the light emitting device package 200 may include a chip on board (COB) type, and an upper surface of the body 330 may be flat, and a plurality of light emitting devices 10 may be installed on the body 330. .

10, 10A, 10B, 10C, 10D: ultraviolet light emitting element
11: substrate
13: buffer layer 15: first conductivity type semiconductor layer
17: active layer 19: second conductive semiconductor layer
20: light emitting structure 21: first reflective layer
23: second reflective layer 25: ohmic layer
27: first electrode 29: second electrode
31: protective layer 41: first region
43: second area

Claims (14)

A substrate comprising a first region and a second region surrounded by the first region;
A light emitting structure including a first conductive semiconductor layer disposed under the substrate, an active layer disposed under the first conductive semiconductor layer, and a second conductive semiconductor layer disposed under the active layer; And
A first reflective layer disposed under the first conductive semiconductor layer,
The first conductivity type semiconductor layer is disposed in the first region,
The first conductive semiconductor layer, the active layer and the second conductive semiconductor layer are disposed in the second region.
And the first reflective layer is disposed under the first conductive semiconductor layer in the first region. The method of claim 1,
And the first reflective layer is spaced apart from the first conductive semiconductor layer in the second region. The method of claim 1,
And a second reflective layer disposed under the second conductive semiconductor layer. The method of claim 3,
The distance between the second reflective layer and the active layer is greater than the distance between the first reflective layer and the active layer. The method of claim 1,
And a protective layer formed on a side surface of the light emitting structure corresponding to the second region. The method of claim 1,
And an ohmic layer formed between the first conductive semiconductor layer and the first reflective layer. The method according to claim 6,
The ohmic layer,
And an ultraviolet light emitting element spaced apart from a side surface of the first conductivity type semiconductor layer along a circumference of the second region. The method according to claim 6,
The ultraviolet light emitting device between the ohmic layer and the first conductivity type semiconductor layer is 1㎛ to 10㎛. The method according to claim 6,
And an area ratio of the area of the first reflective layer to that of the ohmic layer is greater than one. The method according to claim 6,
The UV light emitting device has a width of 5 μm to 30 μm. The ultraviolet light emitting device of claim 6, wherein the first reflective layer is formed to surround the ohmic layer. The method of claim 1,
Ultraviolet light emitting element composed of flip type. The method of claim 1,
The active layer is an ultraviolet light emitting device formed of a compound semiconductor material for generating ultraviolet light having a wavelength of 240nm to 360nm. Body;
First and second lead electrodes disposed on the body;
A light emitting device disposed on any one of the first and second lead electrodes, the light emitting device according to claim 1 to 13; And
And a molding member disposed so as to surround the light emitting element.
KR1020120124003A 2011-12-13 2012-11-05 Ultraviolet light-emitting device KR101961825B1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP12196574.3A EP2605295A3 (en) 2011-12-13 2012-12-11 Ultraviolet light emitting device
US13/712,422 US9786814B2 (en) 2011-12-13 2012-12-12 Ultraviolet light emitting device
JP2012271867A JP6117541B2 (en) 2011-12-13 2012-12-13 UV light emitting device
CN201210540732.0A CN103165784B (en) 2011-12-13 2012-12-13 Ultraviolet light emitting device
TW101147243A TWI585998B (en) 2011-12-13 2012-12-13 Ultraviolet light emitting device

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KR1020110134019 2011-12-13
KR20110134019 2011-12-13

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