KR20130039536A - Light emitting module and light unit having the same - Google Patents

Abstract

PURPOSE: A light emitting module and a light unit having the same are provided to improve the heat dissipation of a light emitting device by using a heat radiation plate. CONSTITUTION: A module PCB(32) includes pads, first holes(321), and second holes(37-1) separated from the first holes. A heat radiation plate(36) includes first protrusions(361) inserted into the first holes of the module PCB. Second protrusions(37) are formed in the heat radiation plate and connected to the second holes of the module PCB. Light emitting devices(34) have heat radiation frames arranged on the first protrusions. The light emitting devices are arranged on the module PCB and are connected to the pads.

Description

LIGHT EMITTING MODULE AND LIGHT UNIT HAVING THE SAME}

The embodiment relates to a light emitting module and a light unit having the same.

As information processing technology develops, display devices such as LCD, PDP and AMOLED are widely used. Among such display devices, an LCD requires a backlight unit capable of generating light in order to display an image.

The light emitting module mounts a plurality of light emitting elements on a substrate and supplies external power through a connector to control driving of the plurality of light emitting elements.

In order to effectively dissipate heat generated from the light emitting device of such a light emitting module, Patent Application No. 10-2005-82374 discloses a structure using a heat dissipation plate.

The embodiment provides a light emitting module having a new structure and a light unit having the same.

The embodiment provides a light emitting module in which a plurality of first holes are formed in a module substrate, a plurality of first protrusions are formed in a heat dissipation plate, and a light emitting element disposed on the module substrate is bonded to the protrusions of the heat dissipation plate. And it provides a light unit having the same.

The embodiment provides a light emitting module having a second protrusion and a second hole for coupling between the module substrate and the heat dissipation plate, and a light unit having the same.

The embodiment provides a light emitting module and a light unit having the same to provide a heat dissipation plate having a plurality of protrusions in a flat structure or a bent structure.

The embodiment provides a light emitting module having a plurality of light emitting devices disposed in a side view and / or a top view on the module substrate, and a light unit having the same.

According to an embodiment, there is provided a light emitting module including: a module substrate including a plurality of pads, a plurality of first holes between the plurality of pads, and a second hole spaced apart from the first hole; A heat dissipation plate including a plurality of first protrusions inserted into the first holes of the module substrate; A second protrusion formed on the heat dissipation plate and coupled to a second hole of the module substrate; And a plurality of light emitting devices having a heat dissipation frame disposed on the first protrusion of the heat dissipation plate and disposed on the module substrate and connected to pads of the module substrate.

According to an embodiment, a light unit includes: the light emitting module; A light guide plate corresponding to the light emitting element of the light emitting module; And a bottom cover accommodating the light guide plate and having a heat dissipation plate disposed thereon.

The embodiment can improve the heat radiation efficiency of the light emitting device.

The embodiment has the effect of enhancing the bonding force between the module substrate and the heat dissipation plate.

The embodiment can suppress the temperature rise of the light emitting diode, thereby improving the light efficiency of the light emitting device.

The embodiment can improve the reliability of the light emitting module having the light emitting element and the lighting system having the same.

1 is an exploded perspective view of a display device according to a first embodiment.
FIG. 2 is a side cross-sectional view of the backlight unit of FIG. 1.
3 is a partial side cross-sectional view of the light emitting module of FIG. 1.
4 is an exploded perspective view of the light emitting module of FIG. 1.
5A, 5B, and 5C show other examples of the second protrusion of the heat dissipation plate and the second hole of the module substrate according to the first embodiment.
6 and 7 are side cross-sectional views illustrating a combination example of a module substrate and a light emitting device of the light emitting module of FIG. 1.
8 is another example of the heat radiation plate in the light emitting module of FIG. 3.
9 is a diagram illustrating an example of coupling the light emitting module of FIG. 8.
10 is a diagram illustrating a display device according to a second embodiment.
FIG. 11 is an exploded perspective view of the light emitting module of FIG. 10.
12 is a cross-sectional view illustrating an example of coupling the light emitting module of FIG. 10.
13 is a side cross-sectional view of a backlight unit according to a third embodiment.
14 is a side cross-sectional view of a backlight unit according to a fourth embodiment.
15 is a side cross-sectional view of a backlight unit according to a fifth embodiment.
16 is a side cross-sectional view illustrating a light emitting chip of a light emitting device according to an embodiment.

In the description of the embodiment, each substrate, frame, sheet, layer, or pattern is formed "on" or "under" of each substrate, frame, sheet, layer, or pattern. In the case of what is described as being intended, "on" and "under" include both "directly" or "indirectly" formed. . In addition, the upper or lower reference of each component is described with reference to the drawings. The size of each component in the drawings may be exaggerated for the sake of explanation and does not mean the size actually applied.

1 is an exploded perspective view illustrating a display device according to an exemplary embodiment.

Referring to FIG. 1, the display device 100 includes a display panel 10 on which an image is displayed, and a backlight unit 20 that provides light to the display panel 10.

The backlight unit 20 may include a light guide plate 70 that provides a surface light source to the display panel 10, a reflective member 45 that reflects leakage light, and a light source in an edge region of the light guide plate 70. A light emitting module 30 and a bottom cover 40 forming a lower exterior of the display device 100 are included.

Although not illustrated, the display device 100 includes a panel supporter for supporting the display panel 10 from a lower side, and a top that forms a rim of the display device 100 and surrounds the circumference of the display panel 10. It may include a cover.

Although not shown in detail, the display panel 10 includes, for example, a lower substrate and an upper substrate coupled to each other to maintain a uniform cell gap, and a liquid crystal layer (not shown) interposed between the two substrates. Include. A plurality of gate lines and a plurality of data lines intersecting the plurality of gate lines may be formed on the lower substrate, and a thin film transistor (TFT) may be formed at an intersection of the gate line and the data line. Color filters may be formed on the upper substrate. The structure of the display panel 10 is not limited thereto, and the display panel 10 may have various structures. In another example, the lower substrate may include a color filter as well as a thin film transistor. In addition, the display panel 10 may be formed in various shapes according to a method of driving the liquid crystal layer.

Although not shown, a gate driving printed circuit board (PCB) for supplying a scan signal to a gate line and a data driving printed circuit board (PCB) for supplying a data signal to a data line are provided at edges of the display panel 10. ) May be provided.

A polarizing film (not shown) may be disposed on at least one of the top and bottom of the display panel 10. An optical sheet 60 may be disposed below the display panel 10, and the optical sheet 60 may be included in the backlight unit 20, and may include at least one prism sheet or / and a diffusion sheet. have. The optical sheet 60 may be removed but is not limited thereto.

The diffusing sheet diffuses the incident light evenly, and the diffused light can be converged on the display panel by the prism sheet. Here, the prism sheet may be selectively configured using a horizontal or / and vertical prism sheet, one or more roughness reinforcing sheets, and the like. Type or number of the optical sheet 60 may be added or deleted within the technical scope of the embodiment, but is not limited thereto.

At least one light emitting module 30 may be disposed in the backlight unit 20, and the number of the light emitting modules 30 may vary depending on the size of the display panel 10, but is not limited thereto.

1 and 2, the light emitting module 30 may be disposed inside the first side portion 42 of the side surface of the bottom cover 40. The light emitting module 30 may be disposed on different side portions of the bottom cover 40, for example, both sides or all sides thereof, but is not limited thereto.

The light emitting module 30 supports a module substrate 32, a plurality of light emitting devices 34 arranged on a first surface of the module substrate 32, and the module substrate 32 and supports the light emitting devices 34. And a heat dissipation plate 36 connected thereto.

The module substrate 32 may include a resin-based printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, and an FR-4 substrate. For example, the module substrate 32 may be a resin substrate such as an epoxy substrate (eg, FR-4 substrate). The module substrate 32 may not use an expensive substrate, such as MCPCB having a metal layer, because the light emitting element 34 conducts heat by conducting heat through the heat radiating plate 36.

A connector may be installed on the module substrate 32. The connector may be disposed on at least one of an upper surface and a lower surface of the module substrate 32, but is not limited thereto.

The plurality of light emitting elements 34 are arranged along the light incident direction X of the light guide plate 70 at a predetermined pitch, and at least one of the plurality of light emitting elements 34 is at least one of, for example, white, red, green, and blue. One will emit light. The embodiment may use a light emitting element 34 emitting light of at least one color or a combination of the light emitting elements 34 emitting light of a plurality of colors. The plurality of light emitting devices 34 may be white LEDs, red / green / blue LEDs may be mixed, or white / red / green / blue LEDs may be mixed, but the present invention is not limited thereto.

The light emitting device 34 may include a light emitting chip using a group III-V group compound semiconductor and a molding member for protecting the light emitting chip. At least one kind of phosphor may be added to the molding member, but is not limited thereto. The light emitting chip may emit a peak wavelength that is selectively selected from the light of the visible light band to the ultraviolet band.

The light emitting devices 34 may be arranged in at least one column, or may be arranged at regular intervals or at irregular intervals. The light emitting device 34 may be electrically connected to the module substrate 32, and may be connected to at least one of a series, a parallel, and a series-parallel mixing scheme by a circuit pattern of the module substrate 32.

The heat dissipation plate 36 includes a first frame portion 36-1 and a second frame portion 36-2. The first frame part 36-1 corresponds to the first side surface of the light guide plate 70, and the module substrate 32 is coupled thereon, and the second frame part 36-2 is connected to the light guide plate ( It corresponds to the bottom surface of 70 and is bent from the first frame portion 36-1. The second frame part 36-2 may be disposed in a range (eg, 70 to 110 °) that is substantially perpendicular or inclined from the first frame part 36-1.

The first frame part 36-1 of the heat dissipation plate 36 may be in contact with the module substrate 32 and may be connected to a portion of the plurality of light emitting devices 34. Here, the first frame part 36-1 may be directly connected to a portion of the plurality of light emitting devices 34 using a conductive material, so that heat generated from the plurality of light emitting devices 34 may be transferred to the second frame part ( 36-2) to conduct and radiate heat. A detailed configuration of the light emitting module will be described later.

The second frame portion 36-2 may have a size wider than that of the first frame portion 36-1, thereby improving heat dissipation efficiency of the light emitting module 30.

The heat dissipation plate 36 may be formed of a metal plate, the material of which is aluminum (Al), copper (Cu), iron (Fe), nickel (Ni), magnesium (Mg), zinc (Zn), titanium ( At least one of Ti), tantalum (Ta), hafnium (Hf), niobium (Nb), and stainless or an alloy of a selected metal may be included. For example, aluminum or an aluminum alloy having good heat dissipation efficiency may be used, but is not limited thereto. .

The heat dissipation plate 36 may have a thickness of about 0.5 mm or more, and for example, may be formed to a thickness of 0.6 mm to 1 mm. The first frame portion 36-1 and the second frame portion 36-2 may have the same thickness or different thicknesses.

The first frame part 36-1 of the heat dissipation plate 36 may be adhered to the first side surface part 42 of the bottom cover 40 by an adhesive member 50. The first frame part 36-1 of the heat dissipation plate 36 may be fastened by a fastening member rather than an adhesive member.

The plurality of light emitting elements 34 are disposed to correspond to at least one side surface of the light guide plate 70 (ie, the light incident portion), and light generated from the plurality of light emitting elements 34 is incident. The light guide plate 70 may be formed in a polygonal shape including an upper surface at which a surface light source is generated, a lower surface opposite to the upper surface, and at least four side surfaces. The light guide plate 70 is made of a transparent material, and may include, for example, one of an acrylic resin series such as polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), and polyethylene naphthalate (PEN) resin. Can be. The light guide plate 70 may be formed by an extrusion molding method, but is not limited thereto.

A reflective pattern (not shown) may be formed on the top or / and bottom of the light guide plate 70. The reflection pattern is formed of a predetermined pattern, for example, a reflection pattern and / or a prism pattern, thereby reflecting or / and diffusely reflecting light, so that the light may be uniformly irradiated through the entire surface of the light guide plate 70. The lower surface of the light guide plate 70 may be formed in a reflective pattern, and the upper surface may be formed in a prism pattern. A scattering agent may be added to the inside of the light guide plate 70, but is not limited thereto.

The reflective member 45 may be provided under the light guide plate 70. The reflective member 45 reflects the light traveling toward the lower portion of the light guide plate 70 in the display panel direction. Since the backlight unit 20 re-injects the light leaked to the lower portion of the light guide plate 70 into the light guide plate 70 by the reflective member 45, the light efficiency is lowered, the light properties are lowered, and dark portions are generated. Etc. problems can be prevented. The reflective member 45 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 45 may be a reflective layer formed on an upper surface of the bottom cover 40, but is not limited thereto.

The bottom cover 40 includes an accommodating portion 41 having an open upper portion, and the accommodating portion 41 includes a light emitting module 30, an optical sheet 60, a light guide plate 70, and a reflecting member 45. Can be stored. The bottom cover 40 is a metal having high heat dissipation efficiency, such as aluminum (Al), magnesium (Mg), zinc (Zn), titanium (Ti), tantalum (Ta), hafnium (Hf), niobium (Nb) and the It may optionally be formed among these optional alloys.

The reflective member 45, the light guide plate 70, and the optical sheet 60 may be sequentially stacked on the accommodating portion 41 of the bottom cover 40, and the light emitting module 30 may include the bottom cover 40. The first side portion 42 of the light guide plate 70 is disposed to correspond to one side of the light guide plate 70.

A recess 41B is formed in the bottom portion 41A of the bottom cover 40, and the recess 41B is a portion to which the second frame portion 36-2 of the heat dissipation plate 36 is coupled. . The concave portion 41B may be formed having a depth of about the thickness of the second frame portion 36-2 and a width of about the width of the second frame portion 36-2, but is not limited thereto. .

The embodiment has described an example in which the recessed portion 41B is disposed in a portion bent from the first side portion 42 of the bottom portion 41A of the bottom cover 40, but the recessed portion 41B is disposed at the bottom portion 41A. ) May not be formed.

2 and 3, the second frame portion 36-2 of the heat dissipation plate 36 may be adhered to the recessed portion disposed on the bottom of the bottom cover by the adhesive member 52.

The first frame portion 36-1 of the heat dissipation plate 36 includes a first protrusion 361, and the first protrusion 361 extends from the first frame portion 36-1 toward the light guide plate or emits light. It protrudes in the direction of the element. The first protrusions 361 of the first frame part 36-1 correspond to each of the light emitting devices 34 as shown in FIG. 3. The number of first protrusions 361 of the first frame part 36-1 may be equal to the number of light emitting elements 34. As another example, when each of the first protrusions 361 of the first frame part 36-1 is disposed to correspond to two or three light emitting elements 34, the first frame part 36-1 is provided. The number of first protrusions 361 may be smaller than the number of light emitting elements 34.

Grooves 361-1 may be formed in an area corresponding to the first protrusion 361 in the first frame part 36-1, and the grooves 361-1 may be formed by a punching process. have. Here, the first protrusion 361 of the first frame portion 36-1 may be a curved portion by the above punching process, the ratio of the flat area of the upper surface may be more than 50% of the total upper surface area. It is not limited thereto.

The module substrate 32 is formed with a first hole 321. The first hole 321 may be disposed on a line having the same center, and formed to correspond to the first protrusion 361 of the first frame portion 36-1 of the heat dissipation plate 36. The first protrusion 361 of the first frame portion 36-1 is inserted into the first hole 321. Here, the first protrusion 361 of the first frame portion 36-1 may protrude to the same height as the thickness of the module substrate 32 or may protrude higher or lower than the thickness of the module substrate 32. have. Herein, the thickness of the first protrusion 361 or the module substrate 32 of the first frame part 36-1 may be 300 μm or more, for example, 400 μm ± 50 μm. have.

The first protrusion 361 of the first frame part 36-1 and the first hole 321 of the module substrate 32 may include a polygonal shape, a circular shape, and a hemispherical shape, but are not limited thereto. Do not. In addition, a plurality of first protrusions 361 may be disposed in the first holes 321 disposed under the light emitting elements 34, but the present invention is not limited thereto.

The module substrate 32 may be spaced apart from the second frame portion 36-2 of the heat dissipation plate 36, but is not limited thereto.

2 and 4, the width L1 of the first frame part 36-1 of the heat dissipation plate 36 may be wider than the width L3 of the module substrate 32. The width L2 of the second frame part 36-1 may be wider than the width L1 of the first frame part 36-1, or may be formed in a width of 5 mm or more, for example, in a range of 6 mm to 20 mm. .

The length of the heat dissipation plate 36 may be longer than the length of the module substrate 32. The length of the heat dissipation plate 36 and the module substrate 32 may be a length corresponding to the X-axis direction of FIG. 1, that is, the arrangement direction of the light emitting devices 34. The width L3 may be a length corresponding to the Y-axis direction or the thickness direction of the light guide plate of FIG. 1. The length of the module substrate 32 may be a length in the long side direction, and the width L3 may be a length in the short side direction.

The upper end of the first frame part 36-1 may be disposed on the same plane as the upper end of the module substrate 32 or higher.

As shown in FIG. 4, a plurality of first holes 321 are arranged in the module substrate 32, and the plurality of first holes 321 correspond to the first protrusions 361, respectively.

The first surface of the module substrate 32 includes a first pad 322 and a second pad 323 disposed near each of the first holes 321, and the first pad 322 and the second pad 323. Each of the pads 323 may be formed in one or a plurality of patterns, but is not limited thereto. The first pad 322 and the second pad 323 may be disposed at both sides of the first hole 321, for example, left / right or up / down. An interval between the first pad 322 and the second pad 323 may be disposed in an area of the light emitting device 34, but is not limited thereto.

The heat dissipation plate 36 moves the first frame portion 36-1 to the second frame portion 36-along a boundary line between the first frame portion 36-1 and the second frame portion 36-2. 2), the first frame portion 36-1 is bent from the second frame portion 36-2.

A plurality of first protrusions 361 may be arranged in the first frame part 36-1, and the plurality of first protrusions 361 may be disposed on the same line as each center.

In this case, a hole 362 is formed in a boundary line between the first frame part 36-1 and the second frame part 36-2 to bend the heat dissipation plate 36. ) May be formed in one or a plurality. In addition, at least one of the first frame portion 36-1 and the second frame portion 36-2 of the heat dissipation plate 36, for example, a coupling hole 363 is formed in the second frame portion 36-2. A coupling member may be coupled to the bottom cover or other mechanism through the coupling hole 363. Accordingly, the heat dissipation plate 36 may be fixed to the bottom cover 40. The coupling member may be a screw or a rivet, but is not limited thereto.

The widths L1 and L2 of the first frame part 36-1 and the second frame part 36-2 are equal to each other, or the width L2 of the second frame part 36-2 is equal to the first width part of the second frame part 36-2. It may be formed wider than the width (L1) of one frame portion (36-1).

3 and 4, the module substrate 32 may include at least one second hole 37-1, and when the plurality of second holes 37-1 are plural, they may be spaced apart from each other. . The second hole 37-1 may be disposed to be spaced apart from the plurality of first holes 321, and may be disposed at, for example, one side of the first hole 321 disposed at the outermost part. The spaces between the plurality of second holes 37-1 may be arranged to be spaced apart from the spaces between the first holes 321 disposed at the outermost sides. In addition, the second hole 37-1 may be disposed in the center area. The second hole 37-1 may have the same lower width and upper width, or may have a lower upper width than the lower width.

In the module substrate 32, the second hole 37-1 is disposed on the same line as the center of the module substrate 32 or the center of the first hole 321, or on the center line of the module substrate 32. Two may be disposed in each of the upper and lower regions away from the.

The first frame part 36-1 of the heat dissipation plate 36 includes a second protrusion 37. The second protrusion 37 may be formed at a position corresponding to the second hole 37-1 of the module substrate 32. The second protrusion 37 may protrude from an upper surface of the heat dissipation plate 36, and may protrude to a thickness or more than the thickness of the module substrate 32. The second protrusion 37 may have a lower width and an upper width, or may have a wider upper width than the lower width.

When viewed from above, the second hole 37-1 and the second protrusion 37 may include a circle, a polygon, a shape having a angular surface, or a shape having a curved surface. The second protrusion 37 may have a shape different from that of the first protrusion 361. An upper surface area of the second protrusion 37 may be formed to be narrower than an upper surface area of the first protrusion 361, and a height may be different from that of the first protrusion 361.

The second protrusion 37 of the heat dissipation plate 36 is inserted into the second hole 37-1 of the module substrate 32, and an upper end thereof is the second hole 37-1 of the module substrate 32. It is fitted to the upper end, or over the upper surface of the module substrate (32). Accordingly, the module substrate 32 may be prevented from being separated from the heat dissipation plate 36 or flowing.

Here, the tolerance between the second hole 37-1 and the second protrusion 37 may be formed within 50 μm, and the tolerance may be formed between the second protrusion 37 and the second hole 37-1. Coupling can be strengthened by surface contact, and insertion and separation of the second protrusions 37 can be achieved.

The second protrusion 37 and the second hole 37-1 may be disposed between the plurality of first protrusions 361 formed in the first frame part 36-1, but are not limited thereto.

According to the embodiment, when the module substrate 32 is coupled to the heat dissipation plate 36, the first hole 321 of the module substrate 32 is inserted into the first protrusion 361 of the heat dissipation plate 36. . In this case, a separate adhesive member may not be disposed between the module substrate 32 and the heat dissipation plate 36. In this case, the second hole 37-1 of the module substrate 32 and the heat dissipation plate ( By coupling the second protrusions 37 of 36 to each other, the module substrate 32 may be primarily fixed to the heat dissipation plate 36. Thereafter, the light emitting element 34 is bonded onto the first protrusion 361 of the heat dissipation plate 36 on the module substrate 32, thereby supporting the module substrate 32 with the light emitting element 34. Can be fixed secondarily.

5A, 5B, and 5C show modifications of the second protrusion 37 and the second hole 37-1 according to the embodiment.

Referring to FIG. 5A, when the groove 371-1 is formed through the pressure punching process through the lower portion of the first frame portion 36-1, the first frame portion 36-1 may be formed. A second protrusion 37A protruding to the opposite side of the groove 371-1 is formed at an upper portion thereof. The height of the second protrusion 37A protrudes higher than that of the module substrate 32. In this case, the second protrusion 37A is formed to have a wider width than the lower portion thereof, so that the second protrusion 37A is inserted through the second hole 37-1 of the module substrate 32 in a press fit manner, and an upper end of the module substrate 32 is formed. Can be combined to hang.

Referring to FIG. 5B, the fastening hole 371 of the first frame part 36-1 is inserted by inserting the second protrusion 37B through the second hole 37-1 of the module substrate 32. 3) is combined. Here, the second protrusion 37B may be a screw or rivet, and the fastening hole 371-3 may have a screw line or a stepped structure.

Referring to FIG. 5C, the second protrusion 37C is joined to the upper surface of the first frame 36-1 by a soldering process to protrude, and the second protrusion 37C is mounted on the module substrate 32. Can be combined with the second hole 37-1. The shape of the second protrusion 37C may be variously provided by being manufactured and bonded to a separate structure, thereby increasing the bonding force with the second hole 37-1.

6 and 7, the mounting structure of the light emitting device will be described.

6 and 7, the light emitting device 34 includes a body 341 having a first cavity 342, a first lead frame 345 and a second lead frame 346 disposed in the body 341. ), A heat dissipation frame 347 having a second cavity 342-1, light emitting chips 101, wires 348, and a molding member 349.

The body 341 may include at least one of a resin material such as polyphthalamide (PPA), silicon (Si), a metal material, photo sensitive glass (PSG), sapphire (Al ₂ O ₃ ), and a printed circuit board (PCB). It can be formed as one. For example, the body 341 may be made of a resin material such as polyphthalamide (PPA).

The top shape of the body 341 may have various shapes such as triangles, squares, polygons, and circles according to the use and design of the light emitting device 34. The first lead frame 345 and the second lead frame 346 may be disposed on the bottom of the body 341 to be mounted on the substrate in a top view type, and may be mounted on the side of the body 341. It may be disposed and mounted on the substrate in the side view type, but is not limited thereto.

The body 341 is open at the top and has a first cavity 342 having a side and a bottom. The first cavity 342 may include a cup structure or a recess structure recessed from an upper surface of the body 341, but is not limited thereto. Sides of the first cavity 342 may be perpendicular to or inclined with respect to the floor.

The shape of the first cavity 342 viewed from above may be a circular, elliptical, or polygonal shape. The edge of the first cavity 342 may be curved or flat.

The first lead frame 345 is disposed in a first region of the bottom region of the first cavity 342, and the second lead frame 346 is a second region of the bottom region of the first cavity 342. Is placed on. The first lead frame 345 and the second lead frame 346 are spaced apart from each other in the first cavity 342. The heat dissipation frame 347 is disposed between the first lead frame 345 and the second lead frame 346.

The first lead portion 345-1 of the first lead frame 345 is bent from the first lead frame 345 and disposed in a first region of the lower surface of the body 341. The first lead portion 345-1 may protrude more than the first side surface S1 of the body 341, but is not limited thereto.

The second lead part 346-1 of the second lead frame 346 is bent from the second lead frame 346 and disposed in the second region of the lower surface of the body 341. The second lead portion 346-1 may protrude more than the second side surface S2 opposite to the first side surface S1 of the body 341, but is not limited thereto.

The lower surface of the first lead portion 345-1 of the first lead frame 345 and the second lead portion 346-1 of the second lead frame 346 is flush with the lower surface of the body 341. It can be placed on.

The heat dissipation frame 347 includes a second cavity 342-1. The second cavity 342-1 is formed at the center of the heat dissipation frame 347, has a lower depth than the bottom of the first cavity 342, and includes a concave recess structure or a cup structure. Side surfaces of the second cavity 342-1 may be inclined or vertically bent from the bottom of the second cavity 342-1. The bottom shape of the second cavity 342-1 may be a circle or ellipse having a rectangular, square or curved surface. Two opposite sides of the side surface of the second cavity 342-1 may be inclined at the same angle or inclined at different angles. The heat dissipation frame 347 may be formed to be non-polar.

A portion of the heat dissipation frame 347 may be disposed on the bottom of the first cavity 342. The third lead part 347-1 of the heat dissipation frame 347 may be disposed under the body 341, and may be exposed to the bottom surface of the body 341.

The first lead frame 345, the second lead frame 346, and the heat dissipation frame 347 are made of a metal material, for example, titanium (Ti), copper (Cu), nickel (Ni), gold (Au), It may include at least one of chromium (Cr), tantalum (Ta), platinum (Pt), tin (Sn), silver (Ag), and phosphorus (P), and may be formed of a single metal layer or a multilayer metal layer. The thicknesses of the first and second lead frames 345 and 346 and the heat dissipation frame 347 may be formed to have the same thickness, but are not limited thereto.

In the body 341, other metal frames other than the first and second lead frames 345 and 346 and the heat dissipation frame 347 may be further disposed and used as a heat dissipation frame or an intermediate connection terminal, but embodiments of the present invention are not limited thereto. .

At least one light emitting chip 101 may be disposed in the second cavity 342-1 of the heat dissipation frame 347. The light emitting chip 101 is disposed on the bottom of the second cavity 342-1 of the heat dissipation frame 347, and is connected to the first lead frame 345 and the second lead frame 346 through a wire 348. Can be. The light emitting chip 101 may be attached to the bottom of the second cavity 342-1 with a thermally conductive adhesive or solder.

The light emitting chip 101 may selectively emit light in a range of visible light to ultraviolet light, and may be selected from, for example, a red LED chip, a blue LED chip, a green LED chip, and a yellow green LED chip. The light emitting chip 101 may include a compound semiconductor light emitting device of Group III to Group V elements.

A molding member 349 is disposed in at least one of the first cavity 342 and the second cavity 342-1 of the body 341, and the molding member 349 may be a light transmissive member such as silicone or epoxy. It includes a stratum layer and may be formed in a single layer or multiple layers. The molding member 349 or the light emitting chip 101 may include a phosphor for converting the wavelength of light emitted, and the phosphor excites a part of the light emitted from the light emitting chip 101 to It will emit light. The phosphor may be selectively formed from YAG, TAG, Silicate, Nitride, and Oxy-nitride based materials. The phosphor may include at least one of a red phosphor, a yellow phosphor, and a green phosphor, but the present invention is not limited thereto. The surface of the molding member 349 may be formed in a flat shape, concave shape, convex shape and the like, but is not limited thereto.

A lens may be further formed on an upper portion of the body 341, and the lens may include a concave or / and convex lens structure, and adjust light distribution of light emitted from the light emitting element 34. Can be.

A protection element may be disposed in the light emitting element 34. The protection element may be disposed in the bottom of the first cavity 342 and may be implemented as a thyristor, a zener diode, or a transient voltage suppression (TVS), and the protection element may be configured to provide ESD protection to the light emitting chip 101. from static discharge).

As illustrated in FIG. 6, the thickness T1 of the module substrate 32 may be the same as or different from the height of the first protrusion 361 of the first frame part 36-1. For example, the height of the top surface of the first protrusion 361 may be formed in a range of ± 50 μm from the top surface of the module substrate 32 based on the top surface of the module substrate 32.

The width D1 of the first protrusion 361 of the first frame part 36-1 may correspond to the third lead part 347-1 exposed on the body 341 of the lower surface of the heat dissipation frame 347. It may be the same width or narrower. The upper surface area of the first protrusion 361 is equal to the area of the third lead portion 347-1 exposed on the body 341 of the lower surface of the heat dissipation frame 347, or the lower surface of the heat dissipation frame 347. At least 60% or more of the third lead portion 347-1 exposed to the body 341 may be contacted. Contact here can include indirect contact through the solder and / or physical contact after removing the solder.

The first pad 322 and the second pad 323 disposed on the module substrate 32 are spaced apart from the first hole 321. The distance D2 between the first hole 321 and the first pad 322 may be spaced at least 180 μm or more, for example, 200 μm or more.

The tolerance between the first hole 321 of the module substrate 32 and the first protrusion 361 of the first frame portion 36-1 may be formed to be in a range of 1 μm or more, for example, 20 μm to 50 μm. have.

When the first hole 321 of the module substrate 32 is coupled to the first projection 361 of the first frame portion 36-1, the module substrate 32 is connected to the first frame portion 36-. It may be disposed on the upper surface of 1). An adhesive may not be used between the module substrate 32 and the first frame portion 36-1, and an adhesive member may be disposed when necessary.

As shown in FIG. 7, the first lead portion 345-1 of the light emitting diode 34 is bonded to the first pad 322 of the module substrate 32 by the first bonding member 371, and the second lead The portion 346-1 is bonded to the second pad 323 of the module substrate 32 by the second bonding member 372, and the third lead portion 347-1 of the heat dissipation frame 347 is The first projection 361 of the first frame portion 36-1 is joined to the first projection 371 by a third bonding member 373. The first to third bonding members 371, 372 and 373 may include a solder material, and as another example, may include a conductive tape. For example, since the solder material has a higher thermal conductivity than the conductive tape, the first to third bonding members 371, 372 and 373 may use a solder material.

Here, the third joining member 373 is inserted through the first hole 321 of the module substrate 32, so that the side surface and the top surface of the first protrusion 361 of the first frame portion 36-1. Can be contacted. Accordingly, the heat dissipation frame 347 of the light emitting element 34 is bonded to the first protrusion 361 of the first frame part 36-1 by the third bonding member 373, thereby providing the module substrate 32. A separate adhesive member for fixing the first frame portion 36-1 may not be necessary.

The light emitting chip 101 receives power from the first lead frame 345 and the second lead frame 346 to emit light, and heat generated from the light emitting chip 101 is transferred to the heat dissipation frame 347. Primary heat dissipation is achieved by conduction. In addition, the heat dissipation frame 347 directly conducts the heat to the first protrusion 361 of the first frame part 36-1, and thus, the first frame part 36-1 and the heat dissipation plate 36 having the same. Heat radiation is performed. Accordingly, since the temperature rise of the light emitting chip 101 can be suppressed, the light emitting chip 101 can operate stably, and the light efficiency of the light emitting device 34 can be improved.

FIG. 8 is a diagram illustrating a modified example of the heat dissipation plate of FIG. 1, and FIG. 9 is a diagram illustrating a coupling example of the light emitting module of FIG. 8.

Referring to FIG. 8, a plurality of first protrusions 361 are formed in the first frame part 36-1 of the heat dissipation plate 36, and the plurality of first protrusions 361 may be formed by an etching process. Can be. Accordingly, the grooves of FIG. 3 may be removed from the first frame 36-1.

Referring to FIG. 9, the light emitting device 44 includes a body 441 having a cavity 442, a first lead frame 445 and a second lead frame 446 disposed in the body 441, and a heat dissipation frame ( 447, light emitting chips 101, wires 448, and molding member 449.

Lower surfaces of the first lead frame 445, the second lead frame 446, and the heat dissipation frame 447 disposed on the lower surface of the body 441 are disposed on the same plane. The first lead frame 445 and the second lead frame 446 are connected to the first pad 322 and the second pad 323 of the module substrate 32. The upper portion of the heat dissipation frame 447 is disposed with the light emitting chip 101, and the lower portion is connected to the first protrusion 361 of the first frame portion 36-1.

The light emitting device 44 may also be applied to the first embodiment, but is not limited thereto.

10 is a second embodiment. The same configuration as in the first embodiment will be referred to the first embodiment.

10 and 11, the display device 100 includes a display panel 10 and a backlight unit 20, and the backlight unit 20 includes a bottom cover 40, a light emitting module 30A, and reflections. The member 45, the optical sheet 60, and the light guide plate 70 are included.

The light emitting module 30A includes a heat radiating plate 36A, a module substrate 32, and a light emitting element 54. A plurality of first protrusions 361 are formed in the heat dissipation plate 36A, a plurality of first holes 321 are formed in the module substrate 32, and a plurality of light emitting elements () are formed on the module substrate 32. 54).

The heat dissipation plate 36A is formed of a flat plate without a bent structure.

In the light emitting device 54, a region mounted on the module substrate 32 and a cavity region, which is a light exit surface, are vertically disposed. That is, the light emitting device 54 is mounted on the first and second pads 322 and 332 of the module substrate 32 in a side view type.

As shown in FIG. 12, the light emitting device 54 includes a body 541 having a cavity 542, a first lead frame 545 and a second lead frame 546 disposed in the body 541, and a heat dissipation frame 547. ), Light emitting chips 101, wires 548, and a molding member.

The heat dissipation plate 36A may be bonded to the recess 41B disposed at the bottom of the module substrate 32 by an adhesive member 52 or may be coupled to a coupling member such as a screw.

In the body 541 of the light emitting device 54, the surface S3 on which the cavity 542 is formed is disposed between the first side surface S1 and the second side surface S2, and the first lead portion 545-1. ) And the second lead portion 546-1 are formed at a right angle with the surface on which the second lead portion 546-1 is formed.

The first lead part 545-1 of the first lead frame 545 is bonded to the first pad 322 of the module substrate 32 by the first bonding member 571, and the second lead frame 546 is provided. The second lead portion 546-1 is bonded to the second pad 323 of the module substrate 32 by the second bonding member 572, and the third lead portion 547-1 of the heat dissipation frame 547 is formed. Is bonded to the first protrusion 361 of the heat dissipation plate 36A by a third joining member 573.

13 is a diagram illustrating a backlight unit according to a third embodiment.

Referring to FIG. 13, the light emitting module 30B includes a first light emitting element 34 and a second light emitting element 54, a first module substrate 32, a second module substrate 32-1, and a heat dissipation plate 36. ). The configuration of the first module substrate 32 and the first light emitting element 34 can be applied to the module substrate and the light emitting element of the first embodiment, and will be described with the same reference numerals.

The heat dissipation plate 36 may include a first frame portion 36-1 and a second frame portion 36-2, and the first frame portion 36-1 may include a first module substrate 32 and a first frame portion. The first light emitting device 34 is coupled, and the second module substrate 32-1 and the second light emitting device 54 are coupled to the second frame portion 36-2.

The first light emitting element 34 and the second light emitting element 54 are disposed to correspond to different regions of the light incident portion of the light guide plate 70.

A first protrusion 361 is formed in the first frame part 36-1, and a first hole 321 of the first module substrate 32 is coupled to the first protrusion 361. In the first light emitting device 34 disposed on the first module substrate 32, a heat dissipation frame is connected to the first protrusion 361 of the first frame part 36-1 to perform heat dissipation.

A third protrusion 364 is formed in the second frame portion 36-2, and a third hole 321-1 of the second module substrate 32-1 is coupled to the third protrusion 364. do. In the second light emitting device 54 disposed on the second module substrate 32-1, a heat dissipation frame 547 is connected to the third protrusion 364 of the second frame part 36-2 as shown in FIG. 12. Thus, the heat radiation efficiency of the second light emitting device 54 may be improved.

Here, the light emitting module 30B may selectively use a structure in which the top light emitting device 34 of the top view type is coupled to the light emitting devices of FIGS. 6 and 9, and the second light emitting device 54 is illustrated in FIG. 12. It is possible to use a structure in which the light emitting elements of are combined.

14 is a diagram illustrating a backlight unit according to a fourth embodiment.

Referring to FIG. 14, the light emitting module 30C includes a light emitting element 34, a module substrate 32, and a heat dissipation plate 36.

The heat dissipation plate 36 includes a first frame portion 36-1 and second and third frame portions 36-2 and 36-3 facing each other. The second and third frame parts 36-2 and 36-3 may be bent with respect to the first frame part 36-1, and the bent angle may be formed at about 70 ° to about 110 °. The second frame portion 36-2 is disposed under the light guide plate 70, and the third frame portion 36-3 is disposed over the light guide plate 70. An interval between the second frame part 36-2 and the third frame part 36-3 may be formed at least wider than the thickness of the light guide plate 70. The width L4 of the third frame part 36-3 may be narrower than that of the second frame part 36-2, but is not limited thereto.

The third frame part 36-3 of the heat dissipation plate 36 may prevent the light emitted from the light emitting element 34 from leaking.

15 is a diagram illustrating a backlight unit according to a fifth embodiment.

Referring to FIG. 15, the light emitting module 30D includes a first light emitting device 34, a second light emitting device 54, a first module board 32, a second module board 32-2, and a heat dissipation plate 36. ). The configuration of the first module substrate 32 and the first light emitting element 34 can be applied to the module substrate and the light emitting element of the first embodiment, and will be described with the same reference numerals.

The heat dissipation plate 36 includes a first frame portion 36-1 and second and third frame portions 36-2 and 36-3 facing each other. The second and third frame parts 36-2 and 36-3 may be bent from the first frame part 36-1, and the bent angles may be formed at about 70 ° to about 110 °, respectively. The second frame part 36-2 is disposed under the light guide plate 70, and a part of the third frame part 36-3 is disposed on the light guide plate 70. An interval between the second frame part 36-2 and the third frame part 36-3 may be formed at least wider than the thickness of the light guide plate 70. The width of the third frame portion 36-3 may be narrower than that of the second frame portion 36-2, but is not limited thereto.

The third frame part 36-3 of the heat dissipation plate 36 may prevent the light emitted from the light emitting element 34 from leaking.

The second module substrate 32-2 is coupled to the bottom of the third frame part 36-3, and the second light emitting device 54 is disposed on the second module substrate 32-2. As shown in FIG. 12, the heat dissipation frame 547 may be connected to the fourth protrusion 365 of the third frame part 36-3.

The light emitting module 30D arranges the top view first light emitting device 34 and the side view second light emitting device 54 in different areas of the light receiving part of the light guide plate 70 to increase light efficiency. Can give

16 is a view illustrating a light emitting chip according to an embodiment.

Referring to FIG. 16, the light emitting chip 101 may include a growth substrate 111, a buffer layer 113, a low conductive layer 115, a first conductive semiconductor layer 117, an active layer 119, and a second cladding layer ( 121, and a second conductive semiconductor layer 123.

The growth substrate 111 may be formed of a material suitable for growth of a semiconductor material, a carrier wafer. In addition, it may be formed of a material having excellent thermal conductivity, and may use a light transmissive, insulating or conductive substrate. For example, the growth substrate 111 may use at least one of sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, Ga ₂ O ₃ , LiGaO ₃ . A plurality of protrusions 112 may be formed on an upper surface of the growth substrate 111, and the plurality of protrusions 112 may be formed through etching of the growth substrate 111, or may include light such as a separate roughness. It may be formed into an extraction structure. The protrusion 112 may include a stripe shape, a hemispherical shape, or a dome shape. The growth substrate 111 may have a thickness in the range of 30 μm to 150 μm, but is not limited thereto.

A plurality of compound semiconductor layers may be grown on the growth substrate 111, and the growth equipment of the plurality of compound semiconductor layers may be an electron beam evaporator, a physical vapor deposition (PVD), a chemical vapor deposition (CVD), or a plasma laser deposition (PLD). Can be formed by dual-type thermal evaporator sputtering, metal organic chemical vapor deposition (MOCVD), and the like, but is not limited thereto.

A buffer layer 113 may be formed on the growth substrate 111, and the buffer layer 113 may be formed of at least one layer using a group II to group VI compound semiconductor. The buffer layer 113 comprises a semiconductor layer using a group III -V compound semiconductor, for _{example, In x Al y Ga 1 -x-} y N (0≤x≤1, 0≤y≤1, 0≤x A semiconductor having a compositional formula of + y ≦ 1) includes at least one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, and the like. The buffer layer 113 may be formed in a super lattice structure by alternately arranging different semiconductor layers.

The buffer layer 113 may be formed to alleviate the difference in lattice constant between the growth substrate 111 and the nitride-based semiconductor layer, and may be defined as a defect control layer. The buffer layer 113 may have a value between lattice constants between the growth substrate 111 and the nitride-based semiconductor layer. The buffer layer 113 may be formed of an oxide such as a ZnO layer, but is not limited thereto. The buffer layer 113 may be formed in the range of 30 to 500 nm, but is not limited thereto.

A low conductive layer 115 is formed on the buffer layer 113, and the low conductive layer 115 is an undoped semiconductor layer and has a lower electrical conductivity than the first conductive semiconductor layer 117. The low conductive layer 115 may be implemented as a GaN-based semiconductor using a group III-V compound semiconductor, and the undoped semiconductor layer may have a first conductivity type even without intentionally doping a conductive dopant. The undoped semiconductor layer may not be formed, but is not limited thereto. The low conductive layer 115 may be formed between the plurality of first conductive semiconductor layers 117.

The first conductive semiconductor layer 117 may be formed on the low conductive layer 115. The first conductive semiconductor layer 117 may be formed of a semiconductor compound. The first conductive semiconductor layer 117 may be implemented as a group III-V compound semiconductor doped with a first conductive dopant, for example, In _x Al _y Ga _{1 -x- y} N (0 _{≦ x ≦} 1 , 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). When the first conductive semiconductor layer 117 is an n-type semiconductor layer, the dopant of the first conductive type is an n-type dopant and includes Si, Ge, Sn, Se, and Te.

At least one of the low conductive layer 115 and the first conductive semiconductor layer 117 may have a superlattice structure in which different first and second layers are alternately arranged, and the first layer And the thickness of the second layer may be formed to a few Å or more.

A first cladding layer (not shown) may be formed between the first conductive semiconductor layer 117 and the active layer 119, and the first cladding layer may be formed of a GaN-based semiconductor. The first cladding layer serves to restrain the carrier. As another example, the first cladding layer (not shown) may be formed of an InGaN layer or an InGaN / GaN superlattice structure, but is not limited thereto. The first cladding layer may include an n-type and / or p-type dopant, and may be formed of, for example, a first conductive type or low conductivity semiconductor layer.

An active layer 119 is formed on the first conductive semiconductor layer 117. The active layer 119 may be formed of at least one of a double junction, a single well, a single quantum well, a multi well, a multi quantum well (MQW), a quantum line, and a quantum dot structure. In the active layer 119, a well layer and a barrier layer are alternately disposed, and the well layer may be a well layer having a continuous energy level. In addition, the well layer may be a quantum well in which the energy level is quantized. The well layer may be defined as a quantum well layer, and the barrier layer may be defined as a quantum barrier layer. The pair of the well layer and the barrier layer may be formed in 2 to 30 cycles. The well layer is, for example, may be formed of a semiconductor material having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1). The barrier layer is a semiconductor layer having a band gap wider than the band gap of the well layer. For example, In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + It can be formed from a semiconductor material having a compositional formula of y≤1). The pair of the well layer and the barrier layer may include, for example, at least one of InGaN / GaN, AlGaN / GaN, InGaN / AlGaN, InGaN / InGaN.

The active layer 119 may selectively emit light in the wavelength range of the ultraviolet band to the visible light band, for example, may emit a peak wavelength in the range of 420nm to 450nm.

The second clad layer 121 is formed on the active layer 119, and the second clad layer 121 has a higher band gap than the band gap of the barrier layer of the active layer 119. The compound semiconductor may be formed of, for example, a GaN-based semiconductor. For example, the second clad layer 121 may include GaN, AlGaN, InAlGaN, InAlGaN superlattice structure, or the like. The second clad layer 121 may include an n-type and / or p-type dopant, and may be formed of, for example, a second conductive or low conductivity semiconductor layer.

A second conductive semiconductor layer 123 is formed on the second clad layer 121 and may be formed of a semiconductor compound. The second conductive semiconductor layer 123 includes the second conductive semiconductor layer 123 and a second conductive dopant. The second conductive semiconductor layer 123 may be formed of at least one of a group III-V compound semiconductor, for example, a compound semiconductor such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, etc., and may include a single layer or a multilayer. . When the second conductive semiconductor layer 123 is a p-type semiconductor layer, the second conductive dopant may be a p-type dopant and may include Mg, Zn, Ca, Sr, and Ba.

The conductive types of the layers of the light emitting structure 150 may be formed to be opposite to each other. For example, the second conductive semiconductor layer 123 may be an n-type semiconductor layer, and the first conductive semiconductor layer 117 may be a p-type semiconductor layer. It can be implemented as. An n-type semiconductor layer, which is a third conductive semiconductor layer having a polarity opposite to that of the second conductive type, may be further formed on the second conductive semiconductor layer 123. The light emitting chip 101 may define the first conductive semiconductor layer 117, the active layer 119, and the second conductive semiconductor layer 123 as a light emitting structure 150. ) May include at least one of an np junction structure, a pn junction structure, an npn junction structure, and a pnp junction structure. In the n-p and p-n junctions, an active layer is disposed between two layers, and an n-p-n junction or a p-n-p junction includes at least one active layer between three layers.

An electrode layer 141 and a second electrode 145 are formed on the light emitting structure 150, and a first electrode 143 is formed on the first conductive semiconductor layer 117.

The electrode layer 141 is a current diffusion layer, and may be formed of a material having transparency and electrical conductivity. The electrode layer 141 may be formed to have a refractive index lower than that of the compound semiconductor layer.

The electrode layer 141 is formed on an upper surface of the second conductive semiconductor layer 123, and the material may be indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), or indium aluminum (AZO). zinc oxide (IGZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), ZnO, IrOx, RuOx, NiO, etc. Selected, and may be formed of at least one layer. The electrode layer 141 may be formed as a reflective electrode layer, and the material may be selectively formed among, for example, Al, Ag, Pd, Rh, Pt, Ir, and two or more alloys thereof.

The second electrode 145 may be formed on the second conductive semiconductor layer 123 and / or the electrode layer 141, and may include an electrode pad. The second electrode 145 may further include a current spreading pattern having an arm structure or a finger structure. The second electrode 145 may be made of a metal having the characteristics of an ohmic contact, an adhesive layer, and a bonding layer, but is not limited thereto.

A first electrode 143 is formed on a portion of the first conductive semiconductor layer 117. The first electrode 143 and the second electrode 145 are Ti, Ru, Rh, Ir, Mg, Zn, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Au and Au It can be chosen from the optional alloys.

An insulating layer may be further formed on the surface of the light emitting device 101, and the insulating layer may prevent an interlayer short of the light emitting structure 150 and prevent moisture penetration.

The light emitting module according to the embodiment may be applied not only to a backlight unit such as a portable terminal, a computer, but also to a lighting device such as a lighting lamp, a traffic light, a vehicle headlight, an electric sign, a street lamp, and the like, but is not limited thereto. The light guide plate may not be disposed in the top view type light emitting module, but the present invention is not limited thereto. In addition, a light transmitting material such as a lens or glass may be disposed on the light emitting module, but is not limited thereto.

It is not intended to be limited to the above-described embodiments and the accompanying drawings, but is limited by the appended claims. It will be apparent to those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined in the appended claims, As will be described below.

100: display device 10: display panel
20: backlight unit 30, 30A, 30B, 30C, 30D: light emitting module
32, 32-1, 32-2: Module substrate 34, 44, 54: Light emitting element
36,36A: heat dissipation plate 36-1: first frame portion
36-2: second frame part 36-3: third frame part
45: reflective member 60: optical sheet
70: LGP 37,37A, 37B, 37C, 361,364,365: Protrusion
321,321-1,321-2,37-1: holes

Claims (16)

A module substrate including a plurality of pads, a plurality of first holes between the plurality of pads, and a second hole spaced from the first hole;
A heat dissipation plate including a plurality of first protrusions inserted into the first holes of the module substrate;
A second protrusion formed on the heat dissipation plate and coupled to a second hole of the module substrate;
And a plurality of light emitting devices having a heat dissipation frame disposed on the first protrusion of the heat dissipation plate and disposed on the module substrate and connected to pads of the module substrate. The light emitting module of claim 1, wherein a plurality of second holes and the second protrusions of the module substrate are formed. The light emitting module of claim 2, wherein a distance between the plurality of second holes is further spaced apart from a distance between the first holes disposed at the outermost part of the module substrate. The light emitting module of claim 1, wherein an upper surface area of the second protrusion is narrower than an upper surface area of the first protrusion. The light emitting module of claim 1, wherein the second protrusion protrudes from the heat dissipation plate. The light emitting module of claim 1, wherein the second protrusion is bonded to an upper surface of the heat dissipation plate. The light emitting module of claim 1 or 2, wherein the second protrusion includes a screw and is fastened to the heat dissipation plate. The light emitting module of claim 1, wherein the module substrate comprises a resin substrate. The light emitting module of claim 1, wherein the first protrusion of the heat dissipation plate protrudes to the same height as the thickness of the module substrate. The light emitting module of claim 1, further comprising a bonding member between the first protrusion of the heat dissipation plate and the heat dissipation frame of the light emitting element. The light emitting module of claim 10, wherein the bonding member is a solder or a conductive tape. The light emitting module of claim 1, wherein the heat dissipation plate comprises an Al material. The heat dissipation plate of claim 10, wherein the heat dissipation plate comprises: a first frame part on which the plurality of first and second protrusions are disposed; And a second frame portion bent at a predetermined angle from the first frame portion and spaced apart from the module substrate. The method of claim 10, wherein the light emitting device is a cavity formed body; A first lead frame and a second lead frame disposed in the body and connected to a plurality of pads of the module substrate; The heat dissipation frame connected to the first protrusion of the heat dissipation plate between the first and second lead frames; Light emitting module comprising a light emitting chip on the heat dissipation frame. The light emitting module of claim 1;
A light guide plate corresponding to the light emitting element of the light emitting module; And
And a bottom cover accommodating the light guide plate and having a heat dissipation plate disposed thereon. The light unit of claim 15, further comprising an adhesive member between the first side portion of the bottom cover and the first frame portion of the heat dissipation plate.

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