KR20130031788A - 하전 입자 빔 조사 장치, 하전 입자 빔 묘화 장치 및 물품 제조 방법 - Google Patents

하전 입자 빔 조사 장치, 하전 입자 빔 묘화 장치 및 물품 제조 방법 Download PDF

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Publication number
KR20130031788A
KR20130031788A KR1020120101434A KR20120101434A KR20130031788A KR 20130031788 A KR20130031788 A KR 20130031788A KR 1020120101434 A KR1020120101434 A KR 1020120101434A KR 20120101434 A KR20120101434 A KR 20120101434A KR 20130031788 A KR20130031788 A KR 20130031788A
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KR
South Korea
Prior art keywords
charged particle
energy
particle beams
shielding member
time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020120101434A
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English (en)
Korean (ko)
Inventor
게이이치 아리타
마사히토 시노하라
Original Assignee
캐논 가부시끼가이샤
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Publication date
Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR20130031788A publication Critical patent/KR20130031788A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70208—Multiple illumination paths, e.g. radiation distribution devices, microlens illumination systems, multiplexers or demultiplexers for single or multiple projection systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements common to two or more basic types of discharge tubes or lamps
    • H01J3/08—Arrangements for controlling intensity of ray or beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements common to two or more basic types of discharge tubes or lamps
    • H01J3/26—Arrangements for deflecting ray or beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H01J2237/0453—Diaphragms with fixed aperture multiple apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24571—Measurements of non-electric or non-magnetic variables
    • H01J2237/24585—Other variables, e.g. energy, mass, velocity, time, temperature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electron Beam Exposure (AREA)
  • Electron Sources, Ion Sources (AREA)
KR1020120101434A 2011-09-21 2012-09-13 하전 입자 빔 조사 장치, 하전 입자 빔 묘화 장치 및 물품 제조 방법 Ceased KR20130031788A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2011-206557 2011-09-21
JP2011206557A JP2013069812A (ja) 2011-09-21 2011-09-21 荷電粒子線照射装置、荷電粒子線描画装置及び物品製造方法

Publications (1)

Publication Number Publication Date
KR20130031788A true KR20130031788A (ko) 2013-03-29

Family

ID=47880974

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120101434A Ceased KR20130031788A (ko) 2011-09-21 2012-09-13 하전 입자 빔 조사 장치, 하전 입자 빔 묘화 장치 및 물품 제조 방법

Country Status (3)

Country Link
US (1) US20130071791A1 (https=)
JP (1) JP2013069812A (https=)
KR (1) KR20130031788A (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101847429B1 (ko) * 2014-06-19 2018-04-10 후지필름 가부시키가이샤 감방사선성 또는 감활성광선성 수지 조성물과 그것을 이용한 레지스트막, 마스크 블랭크, 레지스트 패턴 형성 방법, 전자 디바이스의 제조 방법, 및 전자 디바이스
JP2018078250A (ja) * 2016-11-11 2018-05-17 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置
US11532760B2 (en) 2017-05-22 2022-12-20 Howmedica Osteonics Corp. Device for in-situ fabrication process monitoring and feedback control of an electron beam additive manufacturing process
EP3597333A1 (en) 2018-07-19 2020-01-22 Howmedica Osteonics Corporation System and process for in-process electron beam profile and location analyses

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3107593B2 (ja) * 1991-06-10 2000-11-13 富士通株式会社 パターン検査装置
US5557105A (en) * 1991-06-10 1996-09-17 Fujitsu Limited Pattern inspection apparatus and electron beam apparatus
JPH06124884A (ja) * 1992-10-12 1994-05-06 Mitsubishi Electric Corp 電子線露光装置
JP3489644B2 (ja) * 1995-11-10 2004-01-26 富士通株式会社 荷電粒子ビーム露光方法及び装置
JP3393983B2 (ja) * 1997-11-26 2003-04-07 東芝機械株式会社 荷電粒子ビーム露光装置
TW405062B (en) * 1999-02-18 2000-09-11 Asm Lithography Bv Lithographic projection apparatus
JP3146201B2 (ja) * 1999-06-11 2001-03-12 株式会社日立製作所 電子線描画装置
US6483117B1 (en) * 1999-06-16 2002-11-19 Nikon Corporation Symmetric blanking for high stability in electron beam exposure systems
WO2002040980A1 (en) * 2000-11-17 2002-05-23 Ebara Corporation Wafer inspecting method, wafer inspecting instrument, and electron beam apparatus
JP2003077813A (ja) * 2001-09-05 2003-03-14 Nikon Corp 荷電粒子線露光装置の結像性能の評価方法、荷電粒子線露光装置の調整方法、ビームぼけ計測装置及び荷電粒子線露光装置
JP4738723B2 (ja) * 2003-08-06 2011-08-03 キヤノン株式会社 マルチ荷電粒子線描画装置、荷電粒子線の電流の測定方法及びデバイス製造方法

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US20130071791A1 (en) 2013-03-21
JP2013069812A (ja) 2013-04-18

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