JP2013069812A - 荷電粒子線照射装置、荷電粒子線描画装置及び物品製造方法 - Google Patents

荷電粒子線照射装置、荷電粒子線描画装置及び物品製造方法 Download PDF

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Publication number
JP2013069812A
JP2013069812A JP2011206557A JP2011206557A JP2013069812A JP 2013069812 A JP2013069812 A JP 2013069812A JP 2011206557 A JP2011206557 A JP 2011206557A JP 2011206557 A JP2011206557 A JP 2011206557A JP 2013069812 A JP2013069812 A JP 2013069812A
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JP
Japan
Prior art keywords
charged particle
particle beams
blocked
shielding plate
electron beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011206557A
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English (en)
Japanese (ja)
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JP2013069812A5 (https=
Inventor
Keiichi Arita
圭一 有田
Masahito Shinohara
正仁 篠原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2011206557A priority Critical patent/JP2013069812A/ja
Priority to US13/612,978 priority patent/US20130071791A1/en
Priority to KR1020120101434A priority patent/KR20130031788A/ko
Publication of JP2013069812A publication Critical patent/JP2013069812A/ja
Publication of JP2013069812A5 publication Critical patent/JP2013069812A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70208—Multiple illumination paths, e.g. radiation distribution devices, microlens illumination systems, multiplexers or demultiplexers for single or multiple projection systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements common to two or more basic types of discharge tubes or lamps
    • H01J3/08—Arrangements for controlling intensity of ray or beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements common to two or more basic types of discharge tubes or lamps
    • H01J3/26—Arrangements for deflecting ray or beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H01J2237/0453—Diaphragms with fixed aperture multiple apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24571—Measurements of non-electric or non-magnetic variables
    • H01J2237/24585—Other variables, e.g. energy, mass, velocity, time, temperature

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electron Beam Exposure (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2011206557A 2011-09-21 2011-09-21 荷電粒子線照射装置、荷電粒子線描画装置及び物品製造方法 Pending JP2013069812A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011206557A JP2013069812A (ja) 2011-09-21 2011-09-21 荷電粒子線照射装置、荷電粒子線描画装置及び物品製造方法
US13/612,978 US20130071791A1 (en) 2011-09-21 2012-09-13 Charged particle beam irradiation apparatus, charged particle beam drawing apparatus, and method of manufacturing article
KR1020120101434A KR20130031788A (ko) 2011-09-21 2012-09-13 하전 입자 빔 조사 장치, 하전 입자 빔 묘화 장치 및 물품 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011206557A JP2013069812A (ja) 2011-09-21 2011-09-21 荷電粒子線照射装置、荷電粒子線描画装置及び物品製造方法

Publications (2)

Publication Number Publication Date
JP2013069812A true JP2013069812A (ja) 2013-04-18
JP2013069812A5 JP2013069812A5 (https=) 2014-09-25

Family

ID=47880974

Family Applications (1)

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JP2011206557A Pending JP2013069812A (ja) 2011-09-21 2011-09-21 荷電粒子線照射装置、荷電粒子線描画装置及び物品製造方法

Country Status (3)

Country Link
US (1) US20130071791A1 (https=)
JP (1) JP2013069812A (https=)
KR (1) KR20130031788A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170059990A1 (en) * 2014-06-19 2017-03-02 Fujifilm Corporation Radiation-sensitive or actinic ray-sensitive resin composition, resist film using the same, mask blank, resist pattern forming method, electronic device manufacturing method, and electronic device
JP2018078250A (ja) * 2016-11-11 2018-05-17 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11532760B2 (en) 2017-05-22 2022-12-20 Howmedica Osteonics Corp. Device for in-situ fabrication process monitoring and feedback control of an electron beam additive manufacturing process
EP3597333A1 (en) 2018-07-19 2020-01-22 Howmedica Osteonics Corporation System and process for in-process electron beam profile and location analyses

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04361544A (ja) * 1991-06-10 1992-12-15 Fujitsu Ltd パターン検査装置
JPH06124884A (ja) * 1992-10-12 1994-05-06 Mitsubishi Electric Corp 電子線露光装置
JPH09134869A (ja) * 1995-11-10 1997-05-20 Fujitsu Ltd 荷電粒子ビーム露光方法及び装置
JPH11162811A (ja) * 1997-11-26 1999-06-18 Toshiba Mach Co Ltd 荷電粒子ビーム露光装置
JP2000243696A (ja) * 1999-02-18 2000-09-08 Asm Lithography Bv リソグラフィ投影装置
JP2000357484A (ja) * 1999-06-11 2000-12-26 Hitachi Ltd 電子線描画装置
JP2001028337A (ja) * 1999-06-16 2001-01-30 Nikon Corp 電子ビーム露光システムでの高安定性対称的ブランキング
JP2003077813A (ja) * 2001-09-05 2003-03-14 Nikon Corp 荷電粒子線露光装置の結像性能の評価方法、荷電粒子線露光装置の調整方法、ビームぼけ計測装置及び荷電粒子線露光装置
JP2005056923A (ja) * 2003-08-06 2005-03-03 Canon Inc マルチ荷電粒子線露光装置および方法ならびに該装置または方法を用いたデバイス製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5557105A (en) * 1991-06-10 1996-09-17 Fujitsu Limited Pattern inspection apparatus and electron beam apparatus
WO2002040980A1 (en) * 2000-11-17 2002-05-23 Ebara Corporation Wafer inspecting method, wafer inspecting instrument, and electron beam apparatus

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04361544A (ja) * 1991-06-10 1992-12-15 Fujitsu Ltd パターン検査装置
JPH06124884A (ja) * 1992-10-12 1994-05-06 Mitsubishi Electric Corp 電子線露光装置
JPH09134869A (ja) * 1995-11-10 1997-05-20 Fujitsu Ltd 荷電粒子ビーム露光方法及び装置
JPH11162811A (ja) * 1997-11-26 1999-06-18 Toshiba Mach Co Ltd 荷電粒子ビーム露光装置
JP2000243696A (ja) * 1999-02-18 2000-09-08 Asm Lithography Bv リソグラフィ投影装置
JP2000357484A (ja) * 1999-06-11 2000-12-26 Hitachi Ltd 電子線描画装置
JP2001028337A (ja) * 1999-06-16 2001-01-30 Nikon Corp 電子ビーム露光システムでの高安定性対称的ブランキング
JP2003077813A (ja) * 2001-09-05 2003-03-14 Nikon Corp 荷電粒子線露光装置の結像性能の評価方法、荷電粒子線露光装置の調整方法、ビームぼけ計測装置及び荷電粒子線露光装置
JP2005056923A (ja) * 2003-08-06 2005-03-03 Canon Inc マルチ荷電粒子線露光装置および方法ならびに該装置または方法を用いたデバイス製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170059990A1 (en) * 2014-06-19 2017-03-02 Fujifilm Corporation Radiation-sensitive or actinic ray-sensitive resin composition, resist film using the same, mask blank, resist pattern forming method, electronic device manufacturing method, and electronic device
JP2018078250A (ja) * 2016-11-11 2018-05-17 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置

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Publication number Publication date
US20130071791A1 (en) 2013-03-21
KR20130031788A (ko) 2013-03-29

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