KR20130026926A - Light emitting device and method for fabricating the same - Google Patents

Abstract

PURPOSE: A light emitting device and a manufacturing method thereof are provided to improve a current diffusion effect by differently forming the dopant density of a window layer and a plurality of convex parts. CONSTITUTION: A light emitting structure layer includes a first conductive semiconductor layer(12), an active layer(13), and a second conductive semiconductor layer(14). An electrode(31) is formed on the light emitting structure layer. A window layer(15) is formed under the second conductive semiconductor layer. A light transmissive electrode layer(21) is formed under the window layer. A mirror layer(23) is formed under the light transmissive electrode layer. A plurality of convex parts(16) protrude from the lower side of the window layer to the mirror layer.

Description

LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME}

The embodiment relates to a light emitting device and a method of manufacturing the same.

In general, semiconductor light emitting diodes (LEDs) are widely used as light sources in full color displays, image scanners, various signal systems, and optical communication devices. These LEDs generate and emit light in the active layer using the recombination principle of electrons and holes.

The AlGaInP series light emitting device can emit laser light having a wavelength range of about 670 nm when it is composed of a laser diode, and in the case of an LED, by adjusting the Al and Ga component ratios in the active layer, it is yellow or green. It can emit high brightness light from 560nm of series to 680nm of Red series. As the Al component increases, the wavelength of emitted light becomes shorter.

The embodiment provides a light emitting device having a new semiconductor structure.

The embodiment provides a light emitting device having a plurality of convex portions between a window layer and a transparent electrode layer.

The embodiment provides a light emitting device capable of diffusing current by varying dopant concentrations of a plurality of convex portions and a window layer, and a method of manufacturing the same.

The embodiment provides a light emitting device including a mirror layer having an uneven structure under the window layer, and a method of manufacturing the same.

The light emitting device according to the embodiment may include a light emitting structure layer including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; An electrode on the light emitting structure layer; A window layer under the second conductive semiconductor layer; A translucent electrode layer below the window layer; A mirror layer under the light transmitting electrode layer; And a plurality of convex portions protruding from the lower surface of the window layer in the direction of the mirror layer.

In one embodiment, a light emitting device manufacturing method includes: forming a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a substrate; Forming a window layer on the first conductive semiconductor layer; Forming a plurality of mask patterns on the window layer; Forming a plurality of convex portions on the window layer between the plurality of mask patterns; Forming a translucent electrode layer on the plurality of convex portions and the window layer; Forming a mirror layer on the light transmissive electrode layer; Forming a conductive substrate on the mirror layer; Removing the substrate; And forming an electrode on the first conductive semiconductor layer from which the substrate is removed, wherein the window layer and the plurality of convex portions include a GaP-based semiconductor layer.

The embodiment can improve light extraction efficiency.

The embodiment can give a current spreading effect through current blocking.

The embodiment may also improve the reliability of the AlGaInP-based light emitting device, the light emitting device package and the lighting system having the same.

1 is a side sectional view showing a light emitting device according to the first embodiment.
2 to 8 are views illustrating a manufacturing process of the light emitting device of FIG. 1.
9 is a side sectional view showing a light emitting device according to the second embodiment.
10 is a side sectional view showing a light emitting device according to the third embodiment.
FIG. 11 is a view illustrating a light emitting device package having the light emitting device of FIG. 1.
12 is a perspective view illustrating a display device having the light emitting device package of FIG. 11.
FIG. 13 is a diagram illustrating another example of a display device having the light emitting device package of FIG. 11.
FIG. 14 is a view illustrating a lighting device having the light emitting device package of FIG. 11.

In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be referred to as being "on" or "under" a substrate, each layer It is to be understood that the terms " on "and " under" include both " directly "or" indirectly " do. In addition, the criteria for the top or bottom of each layer will be described based on the drawings.

However, embodiments of the present invention may be modified in various other forms, and the scope of the present invention is not limited to the embodiments described below. Further, the embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art. Accordingly, the shapes and sizes of the elements in the drawings may be exaggerated for clarity of description, and the elements denoted by the same reference numerals in the drawings are the same elements. First, a semiconductor light emitting device according to an embodiment will be described in detail through various embodiments, and a light emitting device package and a backlight device using the semiconductor light emitting device will be described.

1 is a view showing a light emitting device according to a first embodiment.

Referring to FIG. 1, the light emitting device 41 may include a first conductive semiconductor layer 12, an active layer 13, a second conductive semiconductor layer 14, a window layer 15, and a plurality of convex portions 16. And a light transmissive electrode layer 21, a mirror layer 23, a conductive substrate 25, an electrode layer 33, and an electrode 31.

The first conductive semiconductor layer 12 is a first conductive type dopant is doped with a group III is implemented to -5 V compound semiconductor, for example, _{Al x Ga y In 1 -x- y} P (0≤x≤1, 0 Y? 1, 0? X + y? 1). When the first conductive semiconductor layer 12 is an n-type AlGaInP-based semiconductor layer, the dopant of the first conductive type is an n-type dopant and includes at least one of Si, Ge, Sn, Se, and Te. . The first conductive semiconductor layer 12 may be formed as a single layer or a multilayer, but is not limited thereto.

A first cladding layer (not shown) may be formed between the first conductive semiconductor layer 12 and the active layer 13, and the first cladding layer may be formed of a GaP-based semiconductor. The first cladding layer serves to restrain the carrier. As another example, the first clad layer (not shown) may be formed in a superlattice structure using a group III-V compound semiconductor, but is not limited thereto. The first cladding layer may include an n-type and / or p-type dopant, and may be formed of, for example, a first conductive type or low conductivity semiconductor layer.

An active layer 13 is formed under the first conductive semiconductor layer 12. The active layer 13 may be formed of at least one of a single well, a single quantum well, a multi well, a multi quantum well (MQW), a quantum line, and a quantum dot structure. The active layer 13 may alternately include a well layer and a barrier layer, and the well layer may be a well layer in which energy levels are continuous. In addition, the well layer may be a quantum well in which the energy level is quantized. The well layer may be defined as a quantum well layer, and the barrier layer may be defined as a quantum barrier layer. The pair of the well layer and the barrier layer may be formed in 2 to 30 cycles. The well layer is, for example, may be formed of a semiconductor material having a composition formula of _{Al x Ga y In 1 -x- y} P (0≤x≤1, 0≤y≤1, 0≤x + y≤1). The barrier layer 133 is, for _{example, Al x Ga y In 1 -x-} y P (0≤x≤1, 0≤y≤ a semiconductor layer having a wider band gap than the band gap of the well layer 131 1, 0 ≦ x + y ≦ 1).

The active layer 13 may emit light in an ultraviolet band, or may emit a selective peak wavelength within a wavelength range of 560 nm to 680 nm by adjusting the Al and Ga component ratios.

A second conductive semiconductor layer 14 is formed under the active layer 13. The second conductive semiconductor layer 14 includes a dopant of a second conductive type. The second semiconductor having a second conductivity type composition formula of the semiconductor layer 14 is, for _{example, Al x Ga y In 1 -x-} y P (0≤x≤1, 0≤y≤1, 0≤x + y≤1) It can be formed of a material. When the second conductive semiconductor layer 14 is a p-type AlGaInP-based semiconductor layer, the second conductive dopant is a p-type dopant and may include at least one of Mg, Zn, Ca, Sr, Ba, and C. Can be.

The conductive types of the layers of the light emitting structure layer 11 may be formed to be opposite to each other. For example, the second conductive semiconductor layer may be an n-type semiconductor layer, and the first conductive semiconductor layer 12 may be a p-type semiconductor layer. Can be. Further, an n-type semiconductor layer, which is a third conductive semiconductor layer having a polarity opposite to that of the second conductive type, may be further formed on the second conductive semiconductor layer 14.

The light emitting device may define the first conductive semiconductor layer 12, the active layer 13, and the second conductive semiconductor layer 14 as the light emitting structure layer 11, and the light emitting structure layer 11. May include at least one of an np junction structure, a pn junction structure, an npn junction structure, and a pnp junction structure. In the np and pn junctions, an active layer 13 is disposed between two layers, and an npn junction or a pnp junction includes at least one active layer 13 between three layers.

The second conductive type semiconductor layer 14 below the window layer 15 is formed, the window layer 15 is _{Al x Ga y In 1 -x- y} P (0≤x≤1, 0≤y≤ 1, 0 ≦ x + y ≦ 1), and a second conductive dopant may be added. The window layer 15 may be formed of, for example, a p-type GaP semiconductor layer, and the p-type dopant may include at least one of Mg, Zn, Ca, Sr, C, and Ba. The window layer 15 may have a thickness of about 1 μm or more, for example, about 1 μm to about 8 μm. Since the window layer 15 has a wide energy band gap, the window layer 15 passes through the light emitted from the active layer 13 without absorbing it, and also has a relatively thick thickness to perform the function of the current diffusion layer.

A plurality of convex portions 16 are formed under the window layer 15, and the plurality of convex portions 16 protrude from the window layer 15 in the direction of the mirror layer 23, and Al _x Ga _y In _{1 -x- y} P may be formed in a semiconductor layer having a composition formula of (0≤x≤1, 0≤y≤1, 0≤x + y≤1 ), may be a second conductive type dopant is added. The plurality of convex portions 16 may be the same semiconductor as the window layer 15 or may be formed of a GaP-based semiconductor layer. At least one p-type dopant among Mg, Zn, Ca, Sr, C, and Ba may be added to the convex portion 16. Each convex portion 16 may have a thickness of 3 μm or less, for example, in a range of 1 μm to 3 μm. Each of the convex portions 16 may be formed to have a smaller width than the upper surface width, but is not limited thereto.

The dopant concentrations of the window layer 15 and the plurality of convex portions 16 may be the same, but are not limited thereto.

A light transmissive electrode layer 21 may be formed under the plurality of convex portions 16 and the window layer 15, and the light transmissive electrode layer 21 may be bent by the plurality of convex portions 16. It can be formed as. The transmissive electrode layer 21 is in ohmic contact with the lower surface of the window layer 15 and the surface of the convex portion 16 to diffuse the applied current. The translucent electrode layer 21 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), and indium gallium tin (IGTO). oxide), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), ZnO, IrOx, RuOx, and NiO.

A mirror layer 23 is formed below the transparent electrode layer 21, and the mirror layer 23 includes a metal, and the material may be, for example, Al, Ag, Pd, Rh, Pt, Ir, and two of them. It may be formed selectively from the above alloys. The upper surface of the mirror layer 23 has a concave-convex structure, thereby reflecting light incident through the translucent electrode layer 21, thereby changing the critical angle of the light. The mirror layer 23 may include a bonding layer, and the bonding layer is bonded to the conductive substrate 25.

A conductive substrate 25 is disposed below the mirror layer 23, and the conductive substrate 25 includes a silicon-based material, for example, a p-type silicon substrate. The conductive substrate 25 may include a semiconductor substrate such as GaN, but is not limited thereto.

An electrode layer 33 is disposed below the conductive substrate 25, and the electrode layer 33 includes Ti, Ru, Rh, Ir, Mg, Zn, Al, In, Ta, Pd, Co, Ni, Si, Ge , Ag and Au and their optional alloys.

An electrode 31 is disposed on the first conductive semiconductor layer 12, and the electrode 31 includes Ti, Ru, Rh, Ir, Mg, Zn, Al, In, Ta, Pd, Co, Ni, and Si. , Ge, Ag and Au and their optional alloys.

An insulating layer may be further formed on the surface of the light emitting device 41 to protect the surface, but is not limited thereto.

2 to 8 are views illustrating a manufacturing process of the light emitting device of FIG. 1.

Referring to FIG. 2, the substrate 1 is loaded into growth equipment. The substrate 1 may be a translucent, insulating or conductive substrate, for example, sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge, Ga ₂ O ₃ , LiGaO ₃ At least one of may be used. A plurality of protrusions may be formed on an upper surface of the substrate 1, and the plurality of protrusions may be formed by etching the substrate 1 or may be formed of a light extraction structure such as a separate roughness. The protrusion may include a stripe shape, a hemispherical shape, or a dome shape. The thickness of the substrate 1 may be formed in the range of 30㎛ ~ 400㎛, but is not limited thereto.

The compound semiconductor layer may be grown on the substrate 1, and the growth equipment of the compound semiconductor layer may include an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), and dual heat It can be formed by a dual-type thermal evaporator sputtering, metal organic chemical vapor deposition (MOCVD), etc., but is not limited to such equipment.

The first conductive semiconductor layer 12, the active layer 13, the second conductive semiconductor layer 14, and the window layer 15 are sequentially formed on the substrate 1. The first conductive semiconductor layer 12, active layer 13 and second conductive type semiconductor layer 14 is _{Al x Ga y In 1 -x- y} P (0≤x≤1, 0≤y≤1, It may be formed of a semiconductor layer having a composition formula of 0≤x + y≤1). The first conductive semiconductor layer 12 may be formed of an n-type semiconductor layer to which an n-type dopant is added, and the second conductive semiconductor layer 14 may be formed of a p-type semiconductor layer to which a p-type dopant is added. Can be. The window layer 15 may be formed of a p-type GaP semiconductor layer, and may be formed thicker than the thickness of the second conductive semiconductor layer 14.

A buffer layer and / or a low conductive layer may be formed between the substrate 1 and the first conductive semiconductor layer 12, and the buffer layer and / or the low conductive layer may be formed of at least one of Al, Ga, and In. P) a can be formed by selectively combining, for example, a semiconductor having a composition formula of _{Al x Ga y in 1 -x- y} P (0≤x≤1, 0≤y≤1, 0≤x + y≤1) It can be formed in layers.

Referring to FIG. 3, a mask pattern 16-1 is formed on the window layer 15. The mask pattern 16-1 may be spaced apart from each other, and the material may be formed of at least one of SiO ₂ , Si ₃ N ₄ , and Al ₂ O ₃ . As shown in FIG. 4, the mask pattern 16-1 may have a circular shape, and a width thereof may be formed in a range of 7 μm ± 3 μm, and the interval between the mask patterns 16-1 is 3 μm ± 1 μm. It can be formed as. As another example, the mask pattern 16-1 may include a polygonal shape, and the width and the interval between the mask patterns may be formed within the above range.

A plurality of convex portions 16 are grown on the upper surface of the window layer 15 where the mask pattern 16-1 is not formed. Wherein the plurality of raised portions (16) comprises a Group III -5 compound semiconductor _{layer, Al x Ga y In 1 -x-} y P (0≤x≤1, 0≤y≤1, 0≤x + y It can be formed of a semiconductor layer having a composition formula of ≤1). The plurality of convex portions 16 may be formed of the same semiconductor as the window layer 15, but is not limited thereto.

The plurality of convex portions 16 may be formed to be narrower than the width D2 of the upper surface width, and the inclination angle θ1 of the side surface may be formed in the range of 30 to 80 °.

Referring to FIGS. 3 and 5, the mask pattern is removed and the mask pattern is removed from the upper surface of the window layer 15 in the region 16-2.

Referring to FIG. 6, a light transmissive electrode layer 21 is formed on an upper surface of the window layer 15 and a surface of the convex portion 16, and the light transmissive electrode layer 21 may be formed by sputtering or deposition. The transmissive electrode layer 21 may be formed as a curved layer, and may be in ohmic contact with the upper surface of the window layer 15 and the surface of the convex portion 16. The translucent electrode layer 21 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), and indium gallium tin (IGTO). oxide), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), ZnO, IrOx, RuOx, and NiO.

Referring to FIG. 7, a mirror layer 23 is formed on the window layer 15, and the mirror layer 23 may be formed using a metal material by deposition, plating, and sputtering. The mirror layer 23 may be selectively formed among Al, Ag, Pd, Rh, Pt, Ir, and two or more of these alloys.

The conductive substrate 25 is formed on the mirror layer 23. The conductive substrate 25 may be bonded to the mirror layer 23, but is not limited thereto. The conductive substrate 25 may be silicon-based or include a semiconductor substrate such as GaN, but is not limited thereto.

An electrode layer 33 is formed on the conductive substrate 25, and the electrode layer 33 functions as a pad.

7 and 8, the substrate 1 is removed. The substrate removal method may be used by a laser lift-off method or may be removed using a chemical method. When the substrate 1 is removed, the first conductive semiconductor layer 12 may be exposed.

In addition, the electrode 31 is formed on the surface of the first conductive semiconductor layer 12 from which the substrate is removed, and the electrode 31 includes a pad.

9 is a view showing a light emitting device according to a second embodiment.

Referring to FIG. 9, the light emitting device has different dopant concentrations added to the window layer 15 and the convex portion 17. The convex portion 17 is formed of a GaP-based layer having a higher dopant concentration than the dopant concentration of the window layer 15, and the window layer 15 has a lower dopant concentration than the convex portion 17. It can be formed of a GaP-based layer having. The p-type dopant concentration of the window layer 15 may be formed to be 1 × 10 ¹⁸ cm ⁻³ or less, and the p-type dopant concentration of the plurality of convex portions 17 is formed to be 5 × 10 ¹⁸ cm ⁻³ or more. Can be. The type of dopant added to the window layer 15 and the convex portion 17 may be formed of the same dopant.

As another example, the type of dopant added to the window layer 15 and the convex portion 17 may be formed of other dopants. For example, the dopant added to the window layer 15 may be magnesium (Mg), and the dopant added to the convex portion 17 may be carbon (C). The dopant concentration added to the window layer 15 may be 5 × 10 ¹⁸ cm ⁻³ or less, and the dopant concentration added to the convex portion 17 may be 1 × 10 ¹⁹ cm ⁻³ or more.

The convex portion 17 serves as a layer for diffusing the current supplied to the transparent electrode layer 21, and an area of the window layer 15 between the convex portions 17 serves to block the current. do. Accordingly, the window layer 15 may have a thickness of 8 μm or less.

The region 21-1 corresponding to the electrode 31 of the region of the transparent electrode layer 21 contacting the bottom surface of the window layer 15 is formed as a flat region in which the block portion 17 is not formed. Different from the width of the electrode 31, for example, it may be formed of a width (D3) at least larger than the width of the electrode (31). The region 21-1 is disposed to correspond to the thickness direction of the electrode 31 and the light emitting structure layer 11, thereby blocking a current to be moved to the electrode 31.

In addition, a channel layer 22 is formed around the upper surface of the transparent electrode layer 21, and the channel layer 22 may be formed of an insulating material. The channel layer 22 may be formed in a continuous structure such as a ring, a frame, and a band, and the material may be SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N _4. , Al ₂ O ₃ , TiO ₂ It may include at least one of.

The inner portion of the channel layer 22 may contact the lower surface of the window layer 15, and the outer portion may be spaced apart from the side surface S1 of the semiconductor structure. The channel layer 22 may be spaced apart from the mirror layer 23 and the side surface S1 of the semiconductor structure, thereby preventing electrical short at the side surface of the semiconductor structure.

10 is a view showing a light emitting device according to a third embodiment.

Referring to FIG. 10, in the light emitting device, a plurality of convex portions 18 are formed between the window layer 15 and the transparent electrode layer 21, and each of the convex portions 18 may be formed of the first layer 18-1. The second layer 18-2 is included. The first layer 18-1 is in contact with the window layer 15, and the second layer 18-2 is disposed under the first layer 18-1. The first layer 18-1 and the second layer 18-2 may be formed of a GaP-based semiconductor material.

The first layer 18-1 and the second layer 18-2 may be stacked with different semiconductor materials, stacked with different thicknesses, or stacked with different dopant concentrations. In addition, the pair of the first layer 18-1 and the second layer 18-2 may be repeatedly formed in 2 to 30 cycles, but is not limited thereto.

FIG. 11 is a view illustrating a light emitting device package having the light emitting device of FIG. 1.

Referring to FIG. 11, the light emitting device package 50 includes a body 51, a first lead electrode 52 and a second lead electrode 53 at least partially disposed on the body 51, and the body ( A molding for enclosing the light emitting element 41 on the body 51 and the light emitting element 41 electrically connected to the first lead electrode 52 and the second lead electrode 53. And a member 57.

The body 51 may include a silicon material, a synthetic resin material, or a metal material. The body 51 includes a cavity 35 therein and a reflecting portion having an inclined surface around the cavity 35 when viewed from above.

The first lead electrode 52 and the second lead electrode 53 are electrically separated from each other, and may be formed to penetrate the inside of the body 51. That is, some of the first lead electrode 52 and the second lead electrode 53 may be disposed inside the cavity 35, and other portions of the first lead electrode 52 and the second lead electrode 53 may be disposed outside the body 51.

The first lead electrode 52 and the second lead electrode 53 may supply power to the light emitting device 41, and may reflect light generated from the light emitting device 41 to increase light efficiency. It may also function to discharge the heat generated by the light emitting element 41 to the outside.

The light emitting element 41 may be installed on the body 51 or on the first lead electrode 52 and / or the second lead electrode 53.

The wire 56 of the light emitting element 41 may be electrically connected to either the first lead electrode 52 or the second lead electrode 53, but is not limited thereto.

The molding member 57 may surround the light emitting element 41 to protect the light emitting element 41. In addition, the molding member 57 may include a phosphor, and the wavelength of the light emitted from the light emitting element 41 may be changed by the phosphor.

The light emitting device or the light emitting device package according to the embodiment may be applied to the light unit. The light unit includes a structure in which a plurality of light emitting devices or light emitting device packages are arranged, and includes a display device shown in FIGS. 12 and 13 and a lighting device shown in FIG. 14. Etc. may be included.

12 is an exploded perspective view of a display device according to an exemplary embodiment.

Referring to FIG. 12, the display device 1000 includes a light guide plate 1041, a light emitting module 1031 providing light to the light guide plate 1041, a reflective member 1022 under the light guide plate 1041, and the light guide plate 1041. A bottom cover 1011 that houses an optical sheet 1051 on the light guide plate 1041, a display panel 1061 on the optical sheet 1051, the light guide plate 1041, a light emitting module 1031, and a reflective member 1022. ), But is not limited thereto.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 serves to diffuse the light provided from the light emitting module 1031 to make a surface light source. The light guide plate 1041 is made of a transparent material, for example, acrylic resin-based such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN). It may include one of the resins.

The light emitting module 1031 is disposed on at least one side of the light guide plate 1041 to provide light to at least one side of the light guide plate 1041, and ultimately serves as a light source of the display device.

The light emitting module 1031 may include at least one, and may provide light directly or indirectly at one side of the light guide plate 1041. The light emitting module 1031 may include a board 1033 and a light emitting device package 50 according to the embodiment disclosed above, and the light emitting device package 50 may be arrayed on the board 1033 at predetermined intervals. have. The board may be a printed circuit board, but is not limited thereto. In addition, the board 1033 may include a metal core PCB (MCPCB, Metal Core PCB), flexible PCB (FPCB, Flexible PCB) and the like, but is not limited thereto. When the light emitting device package 50 is mounted on the side surface of the bottom cover 1011 or the heat dissipation plate, the board 1033 may be removed. A part of the heat radiation plate may be in contact with the upper surface of the bottom cover 1011. Therefore, heat generated in the light emitting device package 50 may be discharged to the bottom cover 1011 via the heat dissipation plate.

The plurality of light emitting device packages 50 may be mounted on the board 1033 such that an emission surface on which light is emitted is spaced apart from the light guide plate 1041 by a predetermined distance, but is not limited thereto. The light emitting device package 50 may directly or indirectly provide light to a light incident portion that is one side of the light guide plate 1041, but is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflective member 1022 reflects the light incident on the lower surface of the light guide plate 1041 and supplies the reflected light to the display panel 1061 to improve the brightness of the display panel 1061. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be coupled to a top cover (not shown), but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, and includes a first and second substrates of transparent materials facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 displays information by transmitting or blocking light provided from the light emitting module 1031. The display device 1000 can be applied to video display devices such as portable terminals, monitors of notebook computers, monitors of laptop computers, and televisions.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light-transmitting sheet. The optical sheet 1051 may include at least one of a sheet such as a diffusion sheet, a horizontal / vertical prism sheet, a brightness enhanced sheet, and the like. The diffusion sheet diffuses incident light, and the horizontal and / or vertical prism sheet concentrates incident light on the display panel 1061. The brightness enhancing sheet reuses the lost light to improve the brightness I will. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

The light guide plate 1041 and the optical sheet 1051 may be included as an optical member on the optical path of the light emitting module 1031, but are not limited thereto.

13 is a diagram illustrating a display device having a light emitting device package according to an exemplary embodiment.

Referring to FIG. 13, the display device 1100 includes a bottom cover 1152, a board 1120 on which the light emitting device package 50 disclosed above is arranged, an optical member 1154, and a display panel 1155. .

The board 1120 and the light emitting device package 50 may be defined as a light emitting module 1060. The bottom cover 1152, at least one light emitting module 1060, and the optical member 1154 may be defined as a light unit (not shown).

The bottom cover 1152 may include an accommodating part 1153, but is not limited thereto.

The optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a poly methy methacrylate (PMMA) material, and the light guide plate may be removed. The diffusion sheet diffuses the incident light, and the horizontal and vertical prism sheets condense the incident light onto the display panel 1155. The brightness enhancing sheet reuses the lost light to improve the brightness .

The optical member 1154 is disposed on the light emitting module 1060, and performs surface light source, diffusion, condensing, etc. of the light emitted from the light emitting module 1060.

14 is a perspective view of a lighting apparatus according to an embodiment.

Referring to FIG. 14, the lighting device 1500 may include a case 1510, a light emitting module 1530 installed in the case 1510, and a connection terminal installed in the case 1510 and receiving power from an external power source. 1520).

The case 1510 may be formed of a material having good heat dissipation, for example, may be formed of a metal material or a resin material.

The light emitting module 1530 may include a board 1532 and a light emitting device package 50 according to an embodiment mounted on the board 1532. The plurality of light emitting device packages 50 may be arranged in a matrix form or spaced apart at predetermined intervals.

The board 1532 may be a circuit pattern printed on an insulator. For example, a printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, FR-4 substrates and the like.

In addition, the board 1532 may be formed of a material that reflects light efficiently, or a surface may be coated with a color such as white, silver, etc., in which the light is efficiently reflected.

At least one light emitting device package 50 may be mounted on the board 1532. Each of the light emitting device packages 50 may include at least one light emitting diode (LED).

The light emitting module 1530 may be arranged to have a combination of various light emitting device packages 50 to obtain color and luminance. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be combined to secure high color rendering (CRI).

The connection terminal 1520 may be electrically connected to the light emitting module 1530 to supply power. The connection terminal 1520 is inserted into and coupled to an external power source in a socket manner, but is not limited thereto. For example, the connection terminal 1520 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by a wire.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in each embodiment may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

11: light emitting element 12: first conductive semiconductor layer
13: active layer 14: second conductive semiconductor layer
15: window layer 16, 17, 18: convex portion
18-1, 18-2: Channel layer 21: Translucent electrode layer
22: channel layer 23: mirror layer
25 conductive substrate 31 electrode
33: electrode layer

Claims (19)

A light emitting structure layer including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;
An electrode on the light emitting structure layer;
A window layer under the second conductive semiconductor layer;
A translucent electrode layer below the window layer;
A mirror layer under the light transmitting electrode layer; And
And a plurality of convex portions protruding from the lower surface of the window layer in the direction of the mirror layer. The light emitting device of claim 1, wherein the window layer and the plurality of convex portions comprise a GaP-based semiconductor layer. The light emitting device of claim 2, wherein the window layer and the plurality of convex portions include a p-type dopant. The light emitting device of claim 3, wherein the window layer and the plurality of convex portions have different dopant concentrations. The light emitting device of claim 4, wherein the plurality of convex portions have a dopant concentration higher than that of the window layer. The light emitting device of claim 5, wherein a dopant of the window layer and the plurality of convex portions is different from each other. The light emitting device of claim 5, wherein the convex portion includes a plurality of layers having different dopant concentrations. The light emitting device according to any one of claims 1 to 7, further comprising an insulating channel layer between the window layer and the light transmissive electrode layer. The light emitting device of claim 1, wherein a region of the convex portion corresponding to the electrode is formed to have a width that is at least larger than the width of the electrode. The light emitting device according to any one of claims 1 to 7, wherein the window layer has a thickness thicker than that of the convex portion. The light emitting device of claim 10, wherein the convex portion has a thickness of 3 μm or less. The light emitting device of claim 10, wherein the mirror layer comprises a metal material, and the upper surface is formed of an uneven surface. The light emitting device of claim 1, further comprising a conductive substrate under the mirror layer. The light emitting device of claim 13, wherein the conductive substrate is a silicon-based substrate. The light emitting device of claim 14, further comprising an electrode layer under the conductive substrate. The light emitting device of claim 5, wherein a region of the light transmissive electrode layer corresponding to the electrode is flat and has a region that is at least wider than the width of the electrode. The light emitting device according to any one of claims 1 to 6, wherein the plurality of convex portions have an upper surface width that is wider than a lower surface width. Forming a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on the substrate;
Forming a window layer on the first conductive semiconductor layer;
Forming a plurality of mask patterns on the window layer;
Forming a plurality of convex portions on the window layer between the plurality of mask patterns;
Forming a translucent electrode layer on the plurality of convex portions and the window layer;
Forming a mirror layer on the light transmissive electrode layer;
Forming a conductive substrate on the mirror layer;
Removing the substrate; And
Forming an electrode on the first conductive semiconductor layer from which the substrate is removed;
The window layer and the plurality of convex portions include a GaP-based semiconductor layer manufacturing method. The method of claim 18, wherein the window layer and the plurality of convex portions are formed at different p-type dopant concentrations.

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