KR101871503B1 - Light emitting device and method for fabricating the same - Google Patents

Abstract

A light emitting device according to an embodiment includes a light emitting structure layer including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; An electrode on the light emitting structure layer; A window layer below the second conductive semiconductor layer; A transparent electrode layer below the window layer; A mirror layer below the light-transmitting electrode layer; And a plurality of convex portions protruding in the direction of the mirror layer from the bottom surface of the window layer.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a light emitting device,

The embodiments relate to a light emitting device and a manufacturing method thereof.

BACKGROUND ART In general, semiconductor light emitting diodes (LEDs) are widely used as light sources in full color displays, image scanners, various signal systems, and optical communication devices. These LEDs generate and emit light in the active layer, which utilizes the recombination principle of electrons and holes.

The light emitting device of the AlGaInP series can emit laser light having a wavelength of about 670 nm in the case of a laser diode. In the case of an LED, it is possible to control the ratio of Al and Ga in the active layer, It is possible to emit high brightness light of 560 nm to 680 nm which is a red series, and as the Al component increases, the wavelength of light emitted becomes shorter and shorter.

Embodiments provide a light emitting device having a novel semiconductor structure.

The embodiment provides a light emitting device having a plurality of convex portions between a window layer and a light transmitting electrode layer.

Embodiments provide a light emitting device capable of diffusing a current by making a dopant concentration of a plurality of convex portions and a window layer different from each other and a method of manufacturing the same.

Embodiments provide a light emitting device including a mirror layer having a concave-convex structure below a window layer and a method of manufacturing the same.

A light emitting device according to an embodiment includes a light emitting structure layer including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; An electrode on the light emitting structure layer; A window layer below the second conductive semiconductor layer; A transparent electrode layer below the window layer; A mirror layer below the light-transmitting electrode layer; And a plurality of convex portions protruding in the direction of the mirror layer from the bottom surface of the window layer.

A method of manufacturing a light emitting device according to an embodiment of the present invention includes: forming a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a substrate; Forming a window layer on the first conductive semiconductor layer; Forming a plurality of mask patterns on the window layer; Forming a plurality of convex portions on the window layer between the plurality of mask patterns; Forming a transparent electrode layer on the plurality of convex portions and the window layer; Forming a mirror layer on the transparent electrode layer; Forming a conductive substrate on the mirror layer; Removing the substrate; And forming an electrode on the first conductive semiconductor layer from which the substrate is removed, wherein the window layer and the plurality of convex portions include a GaP-based semiconductor layer.

Embodiments can improve the light extraction efficiency.

The embodiment can provide a current diffusion effect through current blocking.

Embodiments can improve the reliability of an AlGaInP light emitting device, a light emitting device package including the same, and an illumination system.

1 is a side sectional view showing a light emitting device according to a first embodiment.
2 to 8 are views showing a manufacturing process of the light emitting device of FIG.
9 is a side sectional view showing a light emitting device according to the second embodiment.
10 is a side sectional view showing a light emitting device according to the third embodiment.
11 is a view showing a light emitting device package having the light emitting element of FIG.
12 is a perspective view showing a display device having the light emitting device package of FIG.
13 is a view showing another example of a display device having the light emitting device package of Fig.
14 is a view showing a lighting device having the light emitting device package of Fig.

In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be referred to as being "on" or "under" a substrate, each layer It is to be understood that the terms " on "and " under" include both " directly "or" indirectly " do. In addition, the criteria for above or below each layer will be described with reference to the drawings

However, the embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Further, the embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art. Accordingly, the shapes and sizes of the elements in the drawings may be exaggerated for clarity of description, and the elements denoted by the same reference numerals in the drawings are the same elements. First, a semiconductor light emitting device according to an embodiment will be described in detail through various embodiments, and a light emitting device package and a backlight device using such a semiconductor light emitting device will be described.

1 is a view showing a light emitting device according to a first embodiment.

1, the light emitting device 41 includes a first conductive semiconductor layer 12, an active layer 13, a second conductive semiconductor layer 14, a window layer 15, a plurality of convex portions 16, A transparent electrode layer 21, a mirror layer 23, a conductive substrate 25, an electrode layer 33, and an electrode 31. [

The first conductive semiconductor layer 12 is formed of a Group III-V compound semiconductor doped with a first conductive type dopant, and may be formed of Al _x Ga _y In _{1 -x- y} P (0? 1, 0? X + y? 1). When the first conductivity type semiconductor layer 12 is an n-type AlGaInP series semiconductor layer, the first conductivity type dopant is at least one of Si, Ge, Sn, Se, and Te as an n-type dopant . The first conductive semiconductor layer 12 may be formed as a single layer or a multilayer, but the present invention is not limited thereto.

A first cladding layer (not shown) may be formed between the first conductive semiconductor layer 12 and the active layer 13, and the first cladding layer may be formed of a GaP semiconductor. The first cladding layer serves to constrain the carrier. As another example, the first clad layer (not shown) may be formed in a superlattice structure using a group III-V compound semiconductor, but the present invention is not limited thereto. The first cladding layer may include n-type and / or p-type dopants, and may be formed of, for example, a first conductive type or a low conductive semiconductor layer.

An active layer 13 is formed under the first conductive semiconductor layer 12. The active layer 13 may be formed of at least one of a single well, a single quantum well, a multi-well, a multiple quantum well (MQW), a quantum wire, and a quantum dot structure. The active layer 13 may be a well layer and a barrier layer alternately arranged, and the well layer may be a well layer having a continuous energy level. Also, the well layer may be a quantum well in which the energy level is quantized. The well layer may be defined as a quantum well layer, and the barrier layer may be defined as a quantum barrier layer. The pair of the well layer and the barrier layer may be formed in 2 to 30 cycles. The well layer may be formed of a semiconductor material having a composition formula of Al _x Ga _y In _{1 -x- y} P (0? _X? 1, 0? _Y? 1, 0? _X + y? The barrier layer 133 is, for _{example, Al x Ga y In 1 -x-} y P (0≤x≤1, 0≤y≤ a semiconductor layer having a wider band gap than the band gap of the well layer 131 1, 0? X + y? 1).

The active layer 13 emits ultraviolet light or emits selective peak wavelengths within a wavelength range of 560 nm to 680 nm by controlling the ratio of Al and Ga.

A second conductive semiconductor layer 14 is formed under the active layer 13. The second conductive semiconductor layer 14 includes a dopant of a second conductivity type. The second conductivity type semiconductor layer 14 is formed of a semiconductor having a composition formula of Al _x Ga _y In _{1 -x- y} P (0? _X? 1, 0? _Y? 1, 0? _X + May be formed of a material. In the case where the second conductivity type semiconductor layer 14 is a p-type AlGaInP series semiconductor layer, the second conductivity type dopant is at least one of Mg, Zn, Ca, Sr, Ba and C as a p- .

The conductive type of the layers of the light emitting structure layer 11 may be reversely formed. For example, the second conductive type semiconductor layer may be an n-type semiconductor layer, and the first conductive type semiconductor layer 12 may be a p- . Also, an n-type semiconductor layer may be further formed on the second conductive semiconductor layer 14 as a third conductive semiconductor layer having a polarity opposite to the polarity of the second conductive type.

The light emitting device may be defined as a light emitting structure layer 11 of the first conductivity type semiconductor layer 12, the active layer 13, and the second conductivity type semiconductor layer 14, May include at least one of an np junction structure, a pn junction structure, an npn junction structure, and a pnp junction structure. In the np and pn junctions, the active layer 13 is disposed between two layers, and the npn junction or the pnp junction includes at least one active layer 13 between the three layers.

The second conductive type semiconductor layer 14 below the window layer 15 is formed, the window layer 15 is _{Al x Ga y In 1 -x- y} P (0≤x≤1, 0≤y≤ 1, 0? X + y? 1), and a second conductivity type dopant may be added. The window layer 15 may be formed of, for example, a p-type GaP semiconductor layer, and the p-type dopant may include at least one of Mg, Zn, Ca, Sr, C and Ba. The thickness of the window layer 15 may be in the range of 1 탆 or more, for example, 1 to 8 탆. Since the window layer 15 has a wide energy bandgap, the window layer 15 allows the light emitted from the active layer 13 to pass without being absorbed, and the thickness of the window layer 15 is relatively thick, so that the window layer 15 functions as a current diffusion layer.

A plurality of convex portions 16 are formed under the window layer 15. The plurality of convex portions 16 protrude from the window layer 15 in the direction of the mirror layer 23 and the Al _x Ga _y In _1- x- _y P (0? _X? 1, 0? _Y? 1, 0? X + y? 1), and a second conductivity type dopant may be added. The plurality of convex portions 16 may be the same semiconductor as the window layer 15, or may be formed of a GaP-based semiconductor layer. At least one p-type dopant of Mg, Zn, Ca, Sr, C, and Ba may be added to the convex portion 16. The thickness of each of the convex portions 16 may be 3 m or less, for example, in the range of 1 to 3 m. Each of the convex portions 16 may be formed to have a smaller width than an upper surface width, but the present invention is not limited thereto.

The dopant concentration of the window layer 15 and the plurality of convex portions 16 may be the same, but the present invention is not limited thereto.

A transparent electrode layer 21 may be formed under the plurality of convex portions 16 and the window layer 15 and the transparent electrode layer 21 may be formed by a plurality of convex portions 16, As shown in FIG. The transparent electrode layer 21 is in ohmic contact with the lower surface of the window layer 15 and the surface of the convex portion 16 and diffuses the applied current. The transmissive electrode layer 21 may be formed of at least one selected from the group consisting of ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO oxide, AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), ZnO, IrOx, RuOx and NiO.

A mirror layer 23 is formed under the transparent electrode layer 21 and the mirror layer 23 includes a metal such as Al, Ag, Pd, Rh, Pt, Ir, Or more of the above-described alloys. The mirror layer 23 is formed in a concavo-convex structure on the upper surface thereof, so that light incident through the transmissive electrode layer 21 can be reflected to change the critical angle of light. The mirror layer 23 may comprise a bonding layer, which is bonded to the conductive substrate 25.

A conductive substrate 25 is disposed under the mirror layer 23, and the conductive substrate 25 includes a silicon-based material, for example, a p-type silicon substrate. The conductive substrate 25 may include a semiconductor substrate such as GaN, but the present invention is not limited thereto.

An electrode layer 33 is disposed under the conductive substrate 25 and the electrode layer 33 is formed of a metal such as Ti, Ru, Rh, Ir, Mg, Zn, Al, In, Ta, Pd, , Ag and Au, and alloys thereof.

An electrode 31 is disposed on the first conductive semiconductor layer 12 and the electrode 31 is formed of a metal such as Ti, Ru, Rh, Ir, Mg, Zn, Al, In, Ta, Pd, , Ge, Ag, Au, and their alloys.

An insulating layer may be further formed on the surface of the light emitting device 41 to protect the surface, but the present invention is not limited thereto.

2 to 8 are views showing a manufacturing process of the light emitting device of FIG.

Referring to FIG. 2, the substrate 1 is loaded into the growth equipment. The substrate 1 may be made of a light-transmitting, insulating or conductive substrate. For example, the substrate 1 may be made of a material such as sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge, Ga ₂ O ₃ , LiGaO ₃ May be used. A plurality of protrusions may be formed on the upper surface of the substrate 1, and the plurality of protrusions may be formed through etching of the substrate 1, or may be formed of a light extraction structure such as a separate roughness. The protrusions may include a stripe shape, a hemispherical shape, or a dome shape. The thickness of the substrate 1 may be in the range of 30 탆 to 400 탆, but is not limited thereto.

A compound semiconductor layer may be grown on the substrate 1. The growth equipment of the compound semiconductor layer may be an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD) For example, a dual-type thermal evaporator, sputtering, metal organic chemical vapor deposition (MOCVD), and the like.

A first conductive semiconductor layer 12, an active layer 13, a second conductive semiconductor layer 14, and a window layer 15 are sequentially formed on the substrate 1. The first conductivity type semiconductor layer 12, the active layer 13, and the second conductivity type semiconductor layer 14 are formed of Al _x Ga _y In _{1 -x- y} P (0? _X ? 1, 0? 0? X + y? 1). The first conductivity type semiconductor layer 12 may be formed of an n-type semiconductor layer doped with an n-type dopant, and the second conductivity type semiconductor layer 14 may be formed of a p-type semiconductor layer doped with a p- . The window layer 15 may be formed of a p-type GaP semiconductor layer and may be thicker than the second conductive semiconductor layer 14.

A buffer layer and / or a low conduction layer may be formed between the substrate 1 and the first conductivity type semiconductor layer 12, and the buffer layer and / or the low conduction layer may include at least one of Al, Ga, P), and may be formed by a combination of a semiconductor having a composition formula of Al _x Ga _y In _{1 -x- y} P (0? _X? 1, 0? _Y? 1, 0? _X + Layer.

Referring to FIG. 3, a mask pattern 16-1 is formed on the window layer 15. The mask patterns 16-1 may be spaced apart from each other, and the material may be formed of at least one of SiO ₂ , Si ₃ N ₄ , and Al ₂ O ₃ . As shown in FIG. 4, the mask pattern 16-1 includes a circular shape and its width may be formed in a range of 7 mu m +/- 3 mu m, and the interval between the mask patterns 16-1 is 3 mu m +/- 1 mu m As shown in FIG. As another example, the mask pattern 16-1 may be formed in a polygonal shape, and the width and the interval between the mask patterns may be formed within the above range.

A plurality of convex portions 16 are grown on the upper surface of the window layer 15 where the mask pattern 16-1 is not formed. The plurality of convex portions 16 include a group III-V group compound semiconductor layer, and are formed of Al _x Ga _y In _{1 -x- y} P (0? _X? 1, 0? Y? 1, Lt; = 1). The plurality of convex portions 16 may be formed of the same semiconductor as the window layer 15, but the present invention is not limited thereto.

The width of the upper surface of the plurality of convex portions 16 may be narrower than the bottom width D2 and the inclination angle? 1 of the side surfaces may be in a range of 30 to 80 degrees.

Referring to FIGS. 3 and 5, the mask pattern is removed, and the mask pattern-removed region 16-2 is exposed on the upper surface of the window layer 15.

6, a transmissive electrode layer 21 is formed on the upper surface of the window layer 15 and the surface of the convex portion 16, and the transmissive electrode layer 21 may be formed by sputtering or vapor deposition. The transparent electrode layer 21 is formed as a curved layer and may be in ohmic contact with the upper surface of the window layer 15 and the surface of the convex portion 16. The transmissive electrode layer 21 may be formed of at least one selected from the group consisting of ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO oxide, AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), ZnO, IrOx, RuOx and NiO.

Referring to FIG. 7, a mirror layer 23 is formed on the window layer 15, and the mirror layer 23 may be formed by vapor deposition, plating, or sputtering using a metal material. The mirror layer 23 may be selectively formed of Al, Ag, Pd, Rh, Pt, Ir, and alloys of two or more thereof.

A conductive substrate 25 is formed on the mirror layer 23. The conductive substrate 25 may be disposed on the mirror layer 23, but the present invention is not limited thereto. The conductive substrate 25 may be a silicon substrate or may include a semiconductor substrate such as GaN, but the present invention is not limited thereto.

An electrode layer 33 is formed on the conductive substrate 25 and the electrode layer 33 functions as a pad.

Referring to FIGS. 7 and 8, the substrate 1 is removed. The substrate removal method may be used by a laser lift off method or by a chemical method. When the substrate 1 is removed, the first conductivity type semiconductor layer 12 may be exposed.

In addition, an electrode 31 is formed on the surface of the first conductive type semiconductor layer 12 from which the substrate is removed, and the electrode 31 includes a pad.

9 is a view showing a light emitting device according to the second embodiment.

Referring to FIG. 9, the light emitting element makes the dopant concentration added to the window layer 15 and the convex portion 17 different. The convex portion 17 is formed of a GaP series layer having a dopant concentration higher than the dopant concentration of the window layer 15 and the window layer 15 has a lower dopant concentration than the convex portion 17 Gt; GaP < / RTI > The p-type dopant concentration of the window layer 15 may be less than or equal to 1 x 10 ¹⁸ cm ^-3 and the p-type dopant concentration of the plurality of convex portions 17 may be less than or equal to 5 x 10 ¹⁸ cm ^-3 . . The dopant added to the window layer 15 and the convex portion 17 may be formed of the same dopant.

As another example, the dopant species added to the window layer 15 and the convex portion 17 may be formed of other dopants. For example, the dopant added to the window layer 15 may be magnesium (Mg), and the dopant added to the convex portion 17 may be carbon (C). The dopant concentration added to the window layer 15 is 5 × 10 ¹⁸ cm ^-3 or less and the dopant concentration added to the convex portion 17 may be 1 × 10 ¹⁹ cm ^-3 or more.

The convex portion 17 serves as a layer for diffusing a current supplied to the light transmitting electrode layer 21 and the region of the window layer 15 between the convex portions 17 serves to block current do. Accordingly, the thickness of the window layer 15 can be less than 8 탆.

A region 21-1 corresponding to the electrode 31 among the regions of the transparent electrode layer 21 touching the lower surface of the window layer 15 is formed as a flat region in which the block portion 17 is not formed, For example, a width D3 that is at least larger than the width of the electrode 31, unlike the width of the electrode 31. This region 21-1 is disposed in correspondence with the thickness direction of the electrode 31 and the light emitting structure layer 11 to block a current to move to the electrode 31. [

Also, a channel layer 22 is formed on the upper surface of the transparent electrode layer 21, and the channel layer 22 may be formed of an insulating material. The channel layer 22 may be formed of a continuous structure such as a ring, a frame, and a band. The material may be SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O _3, TiO ₂ As shown in FIG.

The inner side of the channel layer 22 may contact the lower surface of the window layer 15 and the outer side may be spaced from the side surface S1 of the semiconductor structure. The channel layer 22 may separate the mirror layer 23 from the side surface S1 of the semiconductor structure to prevent electrical shorting on the side surface of the semiconductor structure.

10 is a view illustrating a light emitting device according to the third embodiment.

10, a plurality of convex portions 18 are formed between the window layer 15 and the transparent electrode layer 21, and each of the convex portions 18 includes a first layer 18-1 and a second layer 18-2. And a second layer 18-2. The first layer 18-1 is under the window layer 15 and the second layer 18-2 is disposed under the first layer 18-1. The first layer 18-1 and the second layer 18-2 may be formed of a GaP-based semiconductor material.

The first layer 18-1 and the second layer 18-2 may be stacked with different semiconductor materials, stacked with different thicknesses, or stacked with different dopant concentrations. Also, the pair of the first layer 18-1 and the second layer 18-2 may be repeatedly formed in 2 to 30 cycles, but the present invention is not limited thereto.

11 is a view showing a light emitting device package having the light emitting element of FIG.

11, the light emitting device package 50 includes a body 51, a first lead electrode 52 and a second lead electrode 53 at least partially disposed on the body 51, 51 which are electrically connected to the first lead electrode 52 and the second lead electrode 53 on the body 51 and the molding 51 surrounding the light emitting element 41 on the body 51, Member (57).

The body 51 may be formed of a silicon material, a synthetic resin material, or a metal material. The body 51 includes a reflection portion having a cavity 35 and an inclined surface around the body 35 when viewed from above.

The first lead electrode 52 and the second lead electrode 53 are electrically separated from each other and may be formed to pass through the inside of the body 51. That is, some of the first lead electrode 52 and the second lead electrode 53 may be disposed inside the cavity 35, and other portions may be disposed outside the body 51.

The first lead electrode 52 and the second lead electrode 53 may supply power to the light emitting device 41 and increase the light efficiency by reflecting the light generated from the light emitting device 41, And may also function to discharge heat generated in the light emitting element 41 to the outside.

The light emitting device 41 may be installed on the body 51 or on the first lead electrode 52 and / or the second lead electrode 53.

The wire 56 of the light emitting device 41 may be electrically connected to any one of the first lead electrode 52 and the second lead electrode 53. However, the present invention is not limited thereto.

The molding member 57 may surround the light emitting device 41 to protect the light emitting device 41. In addition, the molding member 57 includes a phosphor, and the wavelength of the light emitted from the light emitting device 41 may be changed by the phosphor.

The light emitting device or the light emitting device package according to the embodiment can be applied to a light unit. The light unit includes a structure in which a plurality of light emitting devices or light emitting device packages are arrayed, and includes the display device shown in Figs. 12 and 13 and the illuminating device shown in Fig. 14, and includes a lighting lamp, a traffic light, a vehicle headlight, And the like.

12 is an exploded perspective view of the display device according to the embodiment.

12, a display device 1000 includes a light guide plate 1041, a light emitting module 1031 for providing light to the light guide plate 1041, a reflection member 1022 under the light guide plate 1041, An optical sheet 1051 on the light guide plate 1041, a display panel 1061 on the optical sheet 1051, and a bottom cover 1011 for storing the light guide plate 1041, the light emitting module 1031 and the reflecting member 1022 , But is not limited thereto.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 diffuses the light from the light emitting module 1031 to convert the light into a surface light source. The light guide plate 1041 may be made of a transparent material such as acrylic resin such as polymethyl methacrylate (PET), polyethylene terephthalate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate Resin. ≪ / RTI >

The light emitting module 1031 is disposed on at least one side of the light guide plate 1041 to provide light to at least one side of the light guide plate 1041 and ultimately to serve as a light source of the display device.

The light emitting module 1031 may include at least one light source, and may provide light directly or indirectly from one side of the light guide plate 1041. The light emitting module 1031 includes a board 1033 and a light emitting device package 50 according to the embodiment described above. The light emitting device package 50 may be arrayed on the board 1033 at a predetermined interval have. The board may be, but is not limited to, a printed circuit board. The board 1033 may include a metal core PCB (MCPCB), a flexible PCB (FPCB), or the like, but is not limited thereto. When the light emitting device package 50 is mounted on the side surface of the bottom cover 1011 or on the heat radiation plate, the board 1033 can be removed. A part of the heat radiation plate may be in contact with the upper surface of the bottom cover 1011. Therefore, heat generated in the light emitting device package 50 can be emitted to the bottom cover 1011 via the heat radiation plate.

The plurality of light emitting device packages 50 may be mounted on the board 1033 such that the light emitting surface of the light emitting device package 50 is spaced apart from the light guiding plate 1041 by a predetermined distance. The light emitting device package 50 may directly or indirectly provide light to the light-incident portion, which is one side of the light guide plate 1041, but is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflective member 1022 reflects the light incident on the lower surface of the light guide plate 1041 and supplies the reflected light to the display panel 1061 to improve the brightness of the display panel 1061. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be coupled to a top cover (not shown), but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, including first and second transparent substrates facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 transmits or blocks light provided from the light emitting module 1031 to display information. The display device 1000 can be applied to video display devices such as portable terminals, monitors of notebook computers, monitors of laptop computers, and televisions.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light-transmitting sheet. The optical sheet 1051 may include at least one of a sheet such as a diffusion sheet, a horizontal / vertical prism sheet, a brightness enhanced sheet, and the like. The diffusion sheet diffuses incident light, and the horizontal and / or vertical prism sheet concentrates incident light on the display panel 1061. The brightness enhancing sheet reuses the lost light to improve the brightness I will. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

The optical path of the light emitting module 1031 may include the light guide plate 1041 and the optical sheet 1051 as an optical member, but the present invention is not limited thereto.

13 is a view illustrating a display device having a light emitting device package according to an embodiment.

13, the display device 1100 includes a bottom cover 1152, a board 1120 in which the light emitting device package 50 described above is arranged, an optical member 1154, and a display panel 1155 .

The board 1120 and the light emitting device package 50 may be defined as a light emitting module 1060. The bottom cover 1152, the at least one light emitting module 1060, and the optical member 1154 may be defined as a light unit (not shown).

The bottom cover 1152 may include a receiving portion 1153, but the present invention is not limited thereto.

The optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a PMMA (poly methy methacrylate) material, and such a light guide plate may be removed. The diffusion sheet diffuses the incident light, and the horizontal and vertical prism sheets condense the incident light onto the display panel 1155. The brightness enhancing sheet reuses the lost light to improve the brightness .

The optical member 1154 is disposed on the light emitting module 1060, and performs surface light source, diffusion, and light condensation of the light emitted from the light emitting module 1060.

14 is a perspective view of a lighting apparatus according to an embodiment.

14, the lighting apparatus 1500 includes a case 1510, a light emitting module 1530 installed in the case 1510, a connection terminal (not shown) installed in the case 1510 and supplied with power from an external power source 1520).

The case 1510 is preferably formed of a material having a good heat dissipation property, and may be formed of, for example, a metal material or a resin material.

The light emitting module 1530 may include a board 1532 and a light emitting device package 50 mounted on the board 1532. A plurality of the light emitting device packages 50 may be arrayed in a matrix form or spaced apart at a predetermined interval.

The board 1532 may be a printed circuit pattern on an insulator and may be a printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, FR-4 substrate, and the like.

In addition, the board 1532 may be formed of a material that efficiently reflects light, or may be a coating layer such as a white color, a silver color, or the like whose surface is efficiently reflected by light.

At least one light emitting device package 50 may be mounted on the board 1532. Each of the light emitting device packages 50 may include at least one light emitting diode (LED).

The light emitting module 1530 may be arranged to have a combination of various light emitting device packages 50 to obtain color and brightness. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be arranged in combination in order to secure a high color rendering index (CRI).

The connection terminal 1520 may be electrically connected to the light emitting module 1530 to supply power. The connection terminal 1520 is connected to the external power source by being inserted in a socket manner, but the present invention is not limited thereto. For example, the connection terminal 1520 may be formed in a pin shape and inserted into an external power source or may be connected to an external power source through wiring.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

11: light emitting element 12: first conductivity type semiconductor layer
13: active layer 14: second conductivity type semiconductor layer
15: window layer 16, 17, 18:
18-1, 18-2: channel layer 21: light-transmitting electrode layer
22: channel layer 23: mirror layer
25: conductive substrate 31: electrode
33: electrode layer

Claims (19)

A light emitting structure layer including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer;
An electrode on the light emitting structure layer;
A window layer below the second conductive semiconductor layer;
A transparent electrode layer below the window layer;
A mirror layer below the light-transmitting electrode layer; And
And a plurality of convex portions protruding from the bottom surface of the window layer in the direction of the mirror layer,
Wherein the window layer and the plurality of convex portions comprise GaP series semiconductor layers,
Wherein the window layer and the plurality of convex portions comprise a p-type dopant,
Wherein the plurality of convex portions have a dopant concentration higher than the dopant concentration of the window layer,
Wherein the convex portion includes a plurality of layers having different dopant concentrations. A light emitting structure layer including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer;
An electrode on the light emitting structure layer;
A window layer below the second conductive semiconductor layer;
A transparent electrode layer below the window layer;
A mirror layer below the light-transmitting electrode layer; And
And a plurality of convex portions protruding from the bottom surface of the window layer in the direction of the mirror layer,
Wherein the window layer and the plurality of convex portions comprise GaP series semiconductor layers,
Wherein the window layer and the plurality of convex portions comprise a p-type dopant,
Wherein the plurality of convex portions have a dopant concentration higher than the dopant concentration of the window layer,
Wherein a region of the light transmitting electrode layer corresponding to the electrode is formed to be flat with a region at least wider than the width of the electrode. The method according to claim 1,
Wherein the convex portion includes a first layer in contact with the bottom surface of the window layer and a second layer disposed under the first layer,
Wherein the first layer and the second layer are laminated with different semiconductor materials. The method of claim 3,
Wherein the first layer and the second layer are formed in one pair for 20 to 30 cycles. 3. The method of claim 2,
And a channel layer disposed around the upper surface of the transmissive electrode layer,
Wherein the channel layer is formed of an insulating material. 6. The method of claim 5,
And a part of the channel layer contacts the lower surface of the window layer. 3. The method according to claim 1 or 2,
Wherein the plurality of convex portions have a top width larger than a bottom width. 8. The method of claim 7,
Wherein the window layer has a thickness greater than the thickness of the convex portion.


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