KR20130046286A - Light emitting device package and light uint - Google Patents

Abstract

PURPOSE: A light emitting device package and a light unit are provided to prevent a fluorescent substance from flowing down in a fluorescent substance coating process and to form a uniform coating layer. CONSTITUTION: At least one electrode(32,33) is formed on a package body. A light emitting device(100) is formed on the electrode. A molding material(37) covers the light emitting device on the package body. A plurality of cavities and a sidewall are formed in a light exit face. A fluorescent material layer is formed in the cavity.

Description

Light Emitting Device Package and Light Unit {LIGHT EMITTING DEVICE PACKAGE AND LIGHT UINT}

The embodiment relates to a light emitting device package and a light unit having the same.

A light emitting diode (LED) is a light emitting element that converts current into light. Recently, light emitting diodes have been increasingly used as a light source for displays, a light source for automobiles, and a light source for illumination because the luminance gradually increases.

In recent years, high output light emitting chips capable of realizing full color by generating short wavelength light such as blue or green have been developed. By applying a phosphor that absorbs a part of the light output from the light emitting chip and outputs a wavelength different from the wavelength of the light, the light emitting diodes of various colors can be combined and a light emitting diode emitting white light can be realized Do.

The embodiment provides a light emitting device package having a new structure.

The embodiment provides a light emitting device package having a light emitting device having improved luminous efficiency.

Embodiments include a package body; At least one electrode on the package body; A light emitting element on the electrode; And a molding member covering the light emitting device on the package body. The light emitting device includes at least one cavity on the exit surface of and provides a light emitting device package including a phosphor layer in the cavity.

The embodiment can improve the amount of light of the light emitting device.

The embodiment can prevent the phosphor layer from flowing down when the phosphor is coated on the light emitting device, so that the coating layer can be formed stably and uniformly.

In addition, by forming a cavity such that the area of the light emitting device is equal to the area of the coating layer, light emission efficiency may be improved while securing a light emitting area.

1 is a view showing a light emitting device package according to a first embodiment.
2 is a cross-sectional view of the light emitting device of FIG. 1.
3 illustrates a top surface of the light emitting device of FIG. 2.
4 to 8 illustrate various embodiments of the light emitting device.
9 is a view showing a light emitting device package according to a second embodiment.
10 is a cross-sectional view of the light emitting device of FIG. 9.
11 is a diagram illustrating a display device including a light emitting device package according to an exemplary embodiment.
12 is a diagram illustrating another example of a display device according to an exemplary embodiment.
13 is a view illustrating a display device including a light emitting device package according to an exemplary embodiment.

In the description of the embodiments, each layer, region, pattern, or structure is formed “on” or “under” of a substrate, each layer (film), region, pad, or pattern. When described as "on" and "under" include both "directly" or "indirectly through" another layer. In addition, the criteria for above or below each layer will be described with reference to the drawings.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.

Hereinafter, a light emitting device package according to an embodiment will be described with reference to the accompanying drawings.

Referring to FIG. 1, the light emitting device package 30 may include a package body 10, a first electrode 32 and a second electrode 33 installed on the package body 10, and the package body 10. The light emitting device 100 is installed in the first electrode 32 and the second electrode 33 and electrically connected to the light emitting device 100, and includes a molding member 37 surrounding the light emitting device 100.

The package body 10 may be formed of a synthetic resin material (for example, PPA), a silicon material (Si), a glass material, or a substrate having a metal layer on at least one layer.

The package body 10 includes a plurality of electrodes, and the plurality of electrodes includes a first electrode 32 and a second electrode 33.

The plurality of electrodes 32 and 33 may be arranged in a lead frame or a plating layer, and may be electrically spaced apart from each other. The plurality of electrodes 32 and 33 may be disposed on an upper surface of the package body 10 or may be disposed to penetrate the inside of the package body 10.

In addition to the first and second electrodes 32 and 33, the package body 10 may further include a layer or pattern made of another conductive layer, for example, a metal, and the layer or pattern may include the light emitting device 100. It may be disposed under the) and used as a heat dissipation plate, or may be formed in a via structure in the body 10.

A cavity 35 having an open upper portion may be formed in the package body 10, and at least one of the first electrode 32 and the second electrode 33 may be disposed in the cavity 35. Hereinafter, an example in which the first and second electrodes 32 and 33 are disposed in the cavity 35 will be described. The first and second electrodes 32 and 33 may selectively include a conductive material, for example, Cu, Al, Ag, Ni, Ti, or the like.

The first and second electrodes 32 and 33 disposed in the cavity 35 are disposed on the bottom surface of the cavity and spaced apart from each other.

The light emitting device 100 may be disposed on at least one electrode in the cavity 35, for example, the first electrode 32. The light emitting device 100 may be connected to the first electrode 32 and the second electrode 33 by a wire 36. The light emitting device 100 may be installed on the package body 10 rather than on an electrode, but is not limited thereto.

The light emitting device 100 may be electrically connected to the first electrode 32 and the second electrode 33 by any one of a wire method, a flip chip method, or a die bonding method.

The first electrode 32 and the second electrode 33 are electrically separated from each other, and provide power to the light emitting device 100. In addition, the first electrode 32 and the second electrode 33 may increase light efficiency by reflecting light generated from the light emitting device 100, and radiate heat conducted from the light emitting device 100. It will play a role.

The lower width of the cavity 35 may be smaller than the upper width, and the side surface of the cavity 35 may be inclined at an angle of less than 90 ° with respect to the bottom surface of the cavity, for example. The side surface of the cavity 35 may be formed as a step structure or a surface perpendicular to the bottom surface of the cavity, but is not limited thereto.

The molding member 37 covers the light emitting device 100 and protects the light emitting device 100. The molding member 37 is preferably formed using a rubber-based, acrylate-based, silicon-based, epoxy-based, vinyl-based, glass, or the like having high refractive index and light transmittance.

On the other hand, the light emitting device 100 includes a phosphor layer 150 on the top.

Referring to FIG. 2, the light emitting device 100 includes a substrate 111, a buffer layer 113, a low conductive layer 115, a first conductive semiconductor layer 117, a first conductive clad layer 119, and an active layer. And a second conductive semiconductor layer 125.

The substrate 111 may be a light transmissive, insulating or conductive substrate, for example, sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, Ga ₂ O ₃ , At least one of LiGaO ₃ may be used. A plurality of protrusions 112 may be formed on an upper surface of the substrate 111, and the plurality of protrusions 112 may be formed through etching of the substrate 111 or may have a light extraction structure such as a separate roughness. It can be formed as. The protrusion 112 may include a stripe shape, a hemispherical shape, or a dome shape. The thickness of the substrate 111 may be formed in the range of 30㎛ ~ 150㎛, but is not limited thereto.

A plurality of compound semiconductor layers may be grown on the substrate 111, and the growth equipment of the plurality of compound semiconductor layers may be an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), or plasma laser deposition (PLD). It can be formed by a dual-type thermal evaporator sputtering, metal organic chemical vapor deposition (MOCVD), and the like, but is not limited to such equipment.

A buffer layer 113 is formed on the substrate 111, and the buffer layer 113 may be formed of at least one layer using group 2 to group 6 compound semiconductors. The buffer layer 113 comprises a semiconductor layer using a group III -V compound semiconductor, for _{example, In x Al y Ga 1 -x-} y N (0≤x≤1, 0≤y≤1, 0≤x A semiconductor having a compositional formula of + y ≦ 1) includes at least one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, and the like. The buffer layer 113 may be formed in a super lattice structure by alternately arranging different semiconductor layers.

The buffer layer 113 may be formed to alleviate the difference in lattice constant between the substrate 111 and the nitride-based semiconductor layer, and may be defined as a defect control layer. The buffer layer 113 may have a value between lattice constants between the substrate 111 and the nitride-based semiconductor layer. The buffer layer 113 may be formed of an oxide such as a ZnO layer, but is not limited thereto. The buffer layer 113 may be formed in the range of 30 to 500 nm, but is not limited thereto.

A low conductive layer 115 is formed on the buffer layer 113, and the low conductive layer 115 is an undoped semiconductor layer and has a lower conductivity than that of the first conductive semiconductor layer 117. The low conductive layer 115 may be implemented as a GaN-based semiconductor using a group III-V compound semiconductor, and the undoped semiconductor layer may have a first conductivity type even without intentionally doping a conductive dopant. The undoped semiconductor layer may not be formed, but is not limited thereto.

The first conductive semiconductor layer 117 may be formed on the low conductive layer 115. The first conductive semiconductor layer 117 is formed of a Group III-V compound semiconductor doped with a first conductive dopant, and is, for example, In _x Al _y Ga _{1- x- y} N (0 _{≦ x ≦} 1, 0 Y? 1, 0? X + y? 1). When the first conductive semiconductor layer 117 is an N-type semiconductor layer, the dopant of the first conductive type is an N-type dopant and includes Si, Ge, Sn, Se, and Te.

At least one of the low conductive layer 115 and the first conductive semiconductor layer 117 may have a superlattice structure in which different first and second layers are alternately arranged, and the first layer And the thickness of the second layer may be formed to a number A or more.

A first conductive cladding layer 119 may be formed between the first conductive semiconductor layer 117 and the active layer 121. The first conductive cladding layer 119 may be formed of a GaN-based semiconductor, and the band gap may be formed to be greater than or equal to the band gap of the barrier layer of the active layer 121. The first conductive clad layer 119 serves to restrain the carrier.

An active layer 121 is formed on the first conductive clad layer 119. The active layer 121 may be formed of at least one of a single quantum well, a multiple quantum well (MQW), a quantum line, and a quantum dot structure. In the active layer 121, a well layer / barrier layer is alternately arranged, and the period of the well layer / barrier layer is, for example, InGaN / GaN, AlGaN / GaN, InGaN / AlGaN, InGaN / InGaN, or InAlGaN / InAlGaN. The structure can be formed in 2 to 30 cycles.

A second conductive cladding layer may be formed between the active layer 121 and the second conductive semiconductor layer 125, and the second conductive cladding layer may have a higher band gap than the band gap of the barrier layer. It may be formed of a material having, but is not limited thereto.

Meanwhile, a second conductive semiconductor layer 125 is formed on the active layer 121, and the second conductive semiconductor layer 125 includes a dopant of a second conductive type. The second conductive semiconductor layer 125 may be formed of any one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, and the like. When the second conductive semiconductor layer 125 is a P-type semiconductor layer, the second conductive dopant may include Mg, Zn, Ca, Sr, and Ba as a P-type dopant.

The conductive types of the layers of the light emitting structure 120 may be formed to be opposite to each other. For example, the second conductive semiconductor layers 125 may be an N type semiconductor layer, and the first conductive semiconductor layers 117 and 119 may be a P type. It may be implemented as a semiconductor layer. Further, an N-type semiconductor layer, which is a third conductive semiconductor layer having a polarity opposite to that of the second conductive type, may be further formed on the second conductive semiconductor layer 125. The semiconductor light emitting device 100 may include the first conductive semiconductor layer 117, the first conductive cladding layer 119, the active layer 121, and the second conductive semiconductor layer 125. The light emitting structure 120 may be implemented as any one of an NP junction structure, a PN junction structure, an NPN junction structure, and a PNP junction structure. The N-P and P-N junctions have an active layer disposed between the two layers, and the N-P-N junction or P-N-P junction includes at least one active layer between the three layers.

The light emitting structure 120 includes a phosphor layer 150.

A plurality of cavities 126 for accommodating the phosphor layer 150 are formed on an upper surface 151 of the second conductivity type semiconductor layer 125.

The plurality of cavities 126 may be formed such that sidewalls have a lattice structure as shown in FIG. 3.

In this case, sidewalls of the plurality of cavities 126 are formed on the top surface 151 of the light emitting structure so that the phosphor layer 150 forms a continuous surface with the phosphor layer 150 of the adjacent cavity 126. It has a shape converging on the upper surface 151 of.

Therefore, as shown in FIG. 2, the cross section of the side wall of the cavity 126 has a triangle and may be in contact with the line on the upper surface 151.

In the phosphor layer 150 formed in the plurality of cavities 126, phosphors are added to the transparent resin layer. The light transmissive resin layer may include a material such as silicon or epoxy, and the phosphor may be selectively formed among YAG, TAG, Silicate, Nitride, and Oxy-nitride-based materials. The phosphor includes at least one of a red phosphor, a yellow phosphor, and a green phosphor, and excites a part of the light emitted from the active layer 150 to emit light at a different wavelength. In addition, according to the component ratio doped to the phosphor can emit light of various colors, for example, the doping material may be an element or compound, such as Sr, Cl, Si, N, Al, Y, O, Ba, Ta and the like.

In this case, the width t of the cavity 126 is formed to have 15 μm or less, and the depth d1 of the cavity 126 is about 1/10 or less of the thickness of the entire light emitting device 100, for example, 120. It is formed to have a depth of 140㎛.

As such, the cavity 126 is formed on the upper surface 151 of the light emitting structure 120, and the phosphor layer 150 is formed in the cavity 126 to form the phosphor layer 150 by the conformal coating. When the phosphor layer 150 flows down, it is possible to prevent the thickness of the phosphor layer 150 from being uneven on the upper surface 151 of the light emitting structure 120.

In addition, the phosphor layer 150 having the same area as the light emitting structure 120 is formed on the upper surface 151 of the light emitting structure 120 to form a partition wall in the phosphor layer 150 while securing the light emitting area. ), The luminous efficiency can be improved and uniform formation of the phosphor layer 150 can be induced.

In FIG. 3, the sidewall of the cavity 126 is limited to have a lattice structure. Alternatively, the sidewall of the cavity 126 may have a stripe pattern or a circular or spiral structure.

Hereinafter, another embodiment of the light emitting device 100 will be described with reference to FIGS. 4 to 8.

4 to 8, the light emitting device 100A-100E of FIG. 4 has the same substrate 111 as that of FIG. 2, a buffer layer 113, a low conductive layer 115, a first conductive semiconductor layer 117, and a first conductive clad. Since the layer 119, the active layer 121, and the second conductive semiconductor layer 125 are included, description thereof will be omitted.

The light emitting device 100A of FIG. 4 has a plurality of cavities 126A on the second conductive semiconductor layer 125 on the light emitting structure 120.

The cavity 126A formed in the edge area A of the cavity 126A has a height different from that of the side wall of the cavity 126 formed in the center area.

As shown in FIG. 4, the sidewall of the edge region A is formed higher than the sidewall of the central region.

At this time, the difference d2 between the side wall of the edge region A and the side wall of the central region satisfies 10 to 20 μm or less.

Meanwhile, the cross section of the side wall of the cavity 126A may have a triangular shape as shown in FIG. 4, but the cross section of the cavity 126B may have an arc like the light emitting device 100 of FIG. 5. 6 may have a polygonal shape.

It is apparent that the embodiment of FIG. 4 may also be applied to the light emitting devices 100B and 100C as shown in FIGS. 5 and 6.

In the case of the light emitting device 100D of FIG. 7, the cavity 126D is formed like the light emitting device 100 of FIG. 2, and the plurality of protrusions 127 are formed on at least one of sidewalls and bottom surfaces of the cavity 126D. Is formed.

The protrusion 127 may have an arc as shown in FIG. 7, and may have a polygonal shape.

Meanwhile, in the light emitting device 100E of FIG. 8, the cavity 126 of any one of the cavities 126 of FIGS. 2 to 7 may have a shape, and different phosphor layers 126 may be formed in the plurality of cavities 126. 150).

That is, the phosphor layer 150 emitting different light may be formed in the neighboring cavity 126. The phosphor emitting red (R), blue (B), and green (G) light as shown in FIG. 8. The layer 150 may be arranged in various ways.

Hereinafter, a second embodiment will be described with reference to FIGS. 9 and 10.

Referring to FIG. 9, the light emitting device package 30A, like the light emitting device package 30 of FIG. 1, includes a package body 10, a first electrode 32 and a second electrode installed on the package body 10. (33), a light emitting device 200 installed on the package body 10 and electrically connected to the first electrode 32 and the second electrode 33, and a molding member surrounding the light emitting device 200. (37).

The description of the same configuration as in the first embodiment is omitted.

The light emitting device package 30A of FIG. 9 has a flip chip structure in which the light emitting device 200 and the first and second electrodes 31 and 32 are connected through the bumps 212.

Referring to FIG. 10, the light emitting device 200 includes a second conductive semiconductor layer 240, an active layer 230, and a first conductive semiconductor layer 220, and is disposed on the first conductive semiconductor layer 220. It has a substrate 210.

The second conductivity type semiconductor layer 240 includes a dopant of a second conductivity type. The second conductive semiconductor layer 240 may be formed of any one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, and the like. When the second conductive semiconductor layer 240 is a P-type semiconductor layer, the second conductive dopant may be a P-type dopant, and may include Mg, Zn, Ca, Sr, and Ba.

An active layer 230 is formed on the second conductive semiconductor layer 240. The active layer 230 may be formed of at least one of a single quantum well, a multiple quantum well (MQW), a quantum line, and a quantum dot structure. In the active layer 121, a well layer / barrier layer is alternately arranged, and the period of the well layer / barrier layer is, for example, InGaN / GaN, AlGaN / GaN, InGaN / AlGaN, InGaN / InGaN, or InAlGaN / InAlGaN. The structure can be formed in 2 to 30 cycles.

The first conductive semiconductor layer 220 may be formed on the active layer 230. The first conductive semiconductor layer 220 is implemented as a Group III-V compound semiconductor doped with a first conductive dopant, and is, for example, In _x Al _y Ga _{1 -x- y} N (0 _{≦ x ≦} 1, 0 Y? 1, 0? X + y? 1). When the first conductive semiconductor layer 220 is an N-type semiconductor layer, the dopant of the first conductive type is an N-type dopant and includes Si, Ge, Sn, Se, and Te.

The substrate 210 may be formed on the first conductive semiconductor layer 220.

The substrate 210 may be a growth substrate of a semiconductor layer, and the substrate 210 may use a light transmissive, insulating or conductive substrate. For example, sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, At least one of Si, GaP, InP, Ge, Ga ₂ O ₃ , and LiGaO ₃ may be used.

Although the simplified shape has been described above, an interlayer material layer as shown in FIG. 2 may be further formed between the stacked structures.

The first pad 221 and the second pad 241 are formed in the first conductive semiconductor layer 220 and the second conductive semiconductor layer 240 to be connected to the bumps 212, respectively.

In the light emitting device package 30A of the second embodiment, the light emitting device package 30A emits light through the substrate 210, and thus, a plurality of cavities 216 are formed on the top surface 251 of the substrate 210.

As shown in FIG. 10, the plurality of cavities 216 may be formed on the upper surface 251 of the substrate 210, and the phosphor layer 250 may be formed in the cavity 216 to change and output the wavelength of the output light.

In FIG. 10, the shape of the cavity 216 is illustrated as shown in FIG. 2, but is not limited thereto.

The light emitting device or the light emitting device package according to the embodiment may be applied to the light unit. The light unit includes a structure in which a plurality of light emitting devices or light emitting device packages are arranged, and includes a display device shown in FIGS. 11 and 12 and a lighting device shown in FIG. 13. Etc. may be included.

11 is an exploded perspective view of a display device according to an exemplary embodiment.

Referring to FIG. 11, the display device 1000 includes a light guide plate 1041, a light emitting module 1031 that provides light to the light guide plate 1041, a reflective member 1022 under the light guide plate 1041, and A bottom cover 1011 that houses an optical sheet 1051 on the light guide plate 1041, a display panel 1061 on the optical sheet 1051, the light guide plate 1041, a light emitting module 1031, and a reflective member 1022. ), But is not limited thereto.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 serves to diffuse the light provided from the light emitting module 1031 to make a surface light source. The light guide plate 1041 is made of a transparent material, for example, acrylic resin-based such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN). It may include one of the resins.

The light emitting module 1031 is disposed on at least one side of the light guide plate 1041 to provide light to at least one side of the light guide plate 1041, and ultimately serves as a light source of the display device.

The light emitting module 1031 may include at least one, and may provide light directly or indirectly at one side of the light guide plate 1041. The light emitting module 1031 may include a substrate 1033 and a light emitting device package 200 according to the above-described embodiment, and the light emitting device package 200 may be arranged on the substrate 1033 at predetermined intervals. have. The substrate may be a printed circuit board, but is not limited thereto. In addition, the substrate 1033 may include a metal core PCB (MCPCB, Metal Core PCB), flexible PCB (FPCB, Flexible PCB) and the like, but is not limited thereto. When the light emitting device package 200 is mounted on the side surface of the bottom cover 1011 or the heat dissipation plate, the substrate 1033 may be removed. A part of the heat radiation plate may be in contact with the upper surface of the bottom cover 1011. Therefore, heat generated in the light emitting device package 200 may be discharged to the bottom cover 1011 via the heat dissipation plate.

The plurality of light emitting device packages 200 may be mounted on the substrate 1033 such that an emission surface from which light is emitted is spaced apart from the light guide plate 1041 by a predetermined distance, but is not limited thereto. The light emitting device package 200 may directly or indirectly provide light to a light incident portion, which is one side of the light guide plate 1041, but is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflective member 1022 reflects the light incident on the lower surface of the light guide plate 1041 and supplies the reflected light to the display panel 1061 to improve the brightness of the display panel 1061. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be coupled to a top cover (not shown), but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, and includes a first and second substrates of transparent materials facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 displays information by transmitting or blocking light provided from the light emitting module 1031. The display device 1000 can be applied to video display devices such as portable terminals, monitors of notebook computers, monitors of laptop computers, and televisions.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light-transmitting sheet. The optical sheet 1051 may include at least one of a sheet such as a diffusion sheet, a horizontal / vertical prism sheet, a brightness enhanced sheet, and the like. The diffusion sheet diffuses incident light, and the horizontal and / or vertical prism sheet concentrates incident light on the display panel 1061. The brightness enhancing sheet reuses the lost light to improve the brightness I will. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

The light guide plate 1041 and the optical sheet 1051 may be included as an optical member on the optical path of the light emitting module 1031, but are not limited thereto.

12 is a view illustrating a display device having a light emitting device package according to an embodiment.

Referring to FIG. 12, the display device 1100 includes a bottom cover 1152, a substrate 1120 on which the light emitting device package 200 disclosed above is arranged, an optical member 1154, and a display panel 1155. .

The substrate 1120 and the light emitting device package 200 may be defined as a light emitting module 1060. The bottom cover 1152, at least one light emitting module 1060, and the optical member 1154 may be defined as a light unit (not shown).

The bottom cover 1152 may include an accommodating part 1153, but is not limited thereto.

The optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a poly methy methacrylate (PMMA) material, and the light guide plate may be removed. The diffusion sheet diffuses the incident light, and the horizontal and vertical prism sheets condense the incident light onto the display panel 1155. The brightness enhancing sheet reuses the lost light to improve the brightness .

The optical member 1154 is disposed on the light emitting module 1060, and performs surface light source, diffusion, condensing, etc. of the light emitted from the light emitting module 1060.

13 is a perspective view of a lighting apparatus according to an embodiment.

Referring to FIG. 13, the lighting device 1500 includes a case 1510, a light emitting module 1530 installed in the case 1510, and a connection terminal installed in the case 1510 and receiving power from an external power source. 1520).

The case 1510 may be formed of a material having good heat dissipation, for example, may be formed of a metal material or a resin material.

The light emitting module 1530 may include a substrate 1532 and a light emitting device package 200 according to an embodiment mounted on the substrate 1532. The plurality of light emitting device packages 200 may be arranged in a matrix form or spaced apart at predetermined intervals.

The substrate 1532 may be a circuit pattern printed on an insulator. For example, a general printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, FR-4 substrates and the like.

In addition, the substrate 1532 may be formed of a material that reflects light efficiently, or a surface may be coated with a color, for example, white or silver, in which the light is efficiently reflected.

At least one light emitting device package 200 may be mounted on the substrate 1532. Each of the light emitting device packages 200 may include at least one light emitting diode (LED) chip. The LED chip may include a light emitting diode in a visible light band such as red, green, blue, or white, or a UV light emitting diode emitting ultraviolet (UV) light.

The light emitting module 1530 may be arranged to have a combination of various light emitting device packages 200 to obtain color and luminance. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be combined to secure high color rendering (CRI).

The connection terminal 1520 may be electrically connected to the light emitting module 1530 to supply power. The connection terminal 1520 is inserted into and coupled to an external power source in a socket manner, but is not limited thereto. For example, the connection terminal 1520 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by a wire.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

30, 30A: light emitting device package,
100-100E, 200: light emitting element,
150, 250: phosphor layer

Claims (13)

Package body;
At least one electrode on the package body;
A light emitting element on the electrode; And
A molding member covering the light emitting device on the package body;
Including;
The light emitting device has a plurality of cavities and sidewalls formed between the cavities on an emission surface, and includes a phosphor layer in the cavities,
The light emitting device package of the side wall and the upper surface of the phosphor layer is in line contact. The method of claim 1,
The side wall is a light emitting device package surrounding the edge of the light emitting device. The method of claim 2,
And a sidewall of the edge is higher than the sidewall of the central region. The method of claim 2,
The side wall may have a grating structure, a stripe structure, a concentric circle structure, or a spiral light emitting device package. The method of claim 1,
Cross-section of the cavity is a light emitting device package having a polygonal or arc shape. The method of claim 1,
The plurality of cavities is a light emitting device package for receiving the phosphor layer for emitting light of different wavelengths. The method of claim 2,
The cavity is a light emitting device package including a plurality of patterns on the bottom surface or side. The method of claim 1,
The width of the cavity is 15μm or less light emitting device package. The method of claim 1,
The cavity of the cavity is less than 1/10 of the height of the light emitting device package. 10. The method of claim 9,
The cavity is a light emitting device package having a depth of 120 to 140㎛. The method of claim 1,
The light-
A first conductivity type semiconductor layer on the substrate,
An active layer on the first conductive semiconductor layer, and
The second conductivity type semiconductor layer on the active layer
/ RTI >
The cavity is a light emitting device package formed on the upper surface of the second conductive semiconductor layer. The method of claim 1,
The light-
A second conductivity type semiconductor layer,
An active layer on the second conductivity type semiconductor layer,
The first conductivity type semiconductor layer on the active layer, and
The first conductivity type semiconductor layer
/ RTI >
The cavity is a light emitting device package formed on the first conductive semiconductor layer. The light emitting device package of any one of claims 1 to 12;
The light unit comprising at least one of a light guide plate and an optical sheet on at least one side of the light emitting device package.

Images