KR20130023347A - 반도체 소자 그리고 반도체 소자를 제조하기 위한 방법 - Google Patents

반도체 소자 그리고 반도체 소자를 제조하기 위한 방법 Download PDF

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Publication number
KR20130023347A
KR20130023347A KR1020137001259A KR20137001259A KR20130023347A KR 20130023347 A KR20130023347 A KR 20130023347A KR 1020137001259 A KR1020137001259 A KR 1020137001259A KR 20137001259 A KR20137001259 A KR 20137001259A KR 20130023347 A KR20130023347 A KR 20130023347A
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South Korea
Prior art keywords
optical element
semiconductor device
semiconductor
semiconductor chip
molding compound
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Ceased
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KR1020137001259A
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English (en)
Korean (ko)
Inventor
미하엘 크루파
시몬 예레빅
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
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Publication of KR20130023347A publication Critical patent/KR20130023347A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00—Producing optical elements, e.g. lenses or prisms
    • B29D11/00009—Production of simple or compound lenses
    • B29D11/00432—Auxiliary operations, e.g. machines for filling the moulds
    • B29D11/00442—Curing the lens material
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/04—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of organic materials, e.g. plastics
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/095—Refractive optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01515—Forming coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Ophthalmology & Optometry (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
KR1020137001259A 2010-06-22 2011-05-25 반도체 소자 그리고 반도체 소자를 제조하기 위한 방법 Ceased KR20130023347A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102010024545.3 2010-06-22
DE102010024545.3A DE102010024545B4 (de) 2010-06-22 2010-06-22 Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
PCT/EP2011/058580 WO2011160913A1 (de) 2010-06-22 2011-05-25 Halbleiterbauelement und verfahren zur herstellung eines halbleiterbauelements

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020177033700A Division KR20170131724A (ko) 2010-06-22 2011-05-25 반도체 소자 그리고 반도체 소자를 제조하기 위한 방법

Publications (1)

Publication Number Publication Date
KR20130023347A true KR20130023347A (ko) 2013-03-07

Family

ID=44260354

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020137001259A Ceased KR20130023347A (ko) 2010-06-22 2011-05-25 반도체 소자 그리고 반도체 소자를 제조하기 위한 방법
KR1020177033700A Ceased KR20170131724A (ko) 2010-06-22 2011-05-25 반도체 소자 그리고 반도체 소자를 제조하기 위한 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020177033700A Ceased KR20170131724A (ko) 2010-06-22 2011-05-25 반도체 소자 그리고 반도체 소자를 제조하기 위한 방법

Country Status (8)

Country Link
US (2) US9368699B2 (cg-RX-API-DMAC10.html)
EP (1) EP2586069B1 (cg-RX-API-DMAC10.html)
JP (1) JP6315988B2 (cg-RX-API-DMAC10.html)
KR (2) KR20130023347A (cg-RX-API-DMAC10.html)
CN (2) CN102947959B (cg-RX-API-DMAC10.html)
DE (1) DE102010024545B4 (cg-RX-API-DMAC10.html)
TW (2) TWI545809B (cg-RX-API-DMAC10.html)
WO (1) WO2011160913A1 (cg-RX-API-DMAC10.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010024545B4 (de) 2010-06-22 2022-01-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
DE102014108368A1 (de) * 2014-06-13 2015-12-17 Osram Opto Semiconductors Gmbh Oberflächenmontierbares Halbleiterbauelement und Verfahren zu dessen Herstellung

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JPS6159406A (ja) 1984-08-31 1986-03-26 Fujitsu Ltd プレ−ナ型光ガイドの光結合構造およびその製造方法
DE10023353A1 (de) 2000-05-12 2001-11-29 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung
JP3991612B2 (ja) * 2001-04-09 2007-10-17 日亜化学工業株式会社 発光素子
DE10129785B4 (de) 2001-06-20 2010-03-18 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
JP2003224304A (ja) * 2002-01-28 2003-08-08 Kasei Optonix Co Ltd 発光装置
JP4241259B2 (ja) 2003-08-06 2009-03-18 セイコーエプソン株式会社 マイクロレンズの製造方法
DE10361650A1 (de) 2003-12-30 2005-08-04 Osram Opto Semiconductors Gmbh Optoelektronisches Modul und Verfahren zu dessen Herstellung
US7645397B2 (en) * 2004-01-15 2010-01-12 Nanosys, Inc. Nanocrystal doped matrixes
DE102005009066A1 (de) 2005-02-28 2006-09-07 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optischen und eines strahlungsemittierenden Bauelementes und optisches sowie strahlungsemittierendes Bauelement
RU2401846C2 (ru) * 2006-04-25 2010-10-20 Учреждение Российской академии наук Институт синтетических полимерных материалов им. Н.С. Ениколопова РАН (ИСПМ РАН) Функциональные полиорганосилоксаны и композиция, способная к отверждению на их основе
TWI338380B (en) 2006-10-11 2011-03-01 Chuan Yu Hung Light emitting diode incorporating high refractive index material
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US8029904B2 (en) 2006-12-01 2011-10-04 Rohm And Haas Company Aryl (thio)ether aryl polysiloxane composition and methods for making and using same
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JP5318383B2 (ja) 2007-08-07 2013-10-16 デクセリアルズ株式会社 光学部品封止材及び発光装置
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JP2009275196A (ja) 2008-05-19 2009-11-26 Sony Corp 硬化性樹脂材料組成物、光学材料、発光装置及びその製造方法、並びに電子デバイス
CN101740707B (zh) * 2009-12-11 2013-11-06 晶科电子（广州）有限公司 预成型荧光粉贴片及其与发光二极管的封装方法
DE102010024545B4 (de) 2010-06-22 2022-01-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements

Also Published As

Publication number Publication date
CN105529392B (zh) 2019-10-18
TWI545809B (zh) 2016-08-11
DE102010024545A1 (de) 2011-12-22
US9368699B2 (en) 2016-06-14
TW201541673A (zh) 2015-11-01
TWI497776B (zh) 2015-08-21
KR20170131724A (ko) 2017-11-29
EP2586069A1 (de) 2013-05-01
US9634207B2 (en) 2017-04-25
JP6315988B2 (ja) 2018-04-25
US20160247986A1 (en) 2016-08-25
JP2013534728A (ja) 2013-09-05
US20130240929A1 (en) 2013-09-19
TW201208148A (en) 2012-02-16
CN102947959B (zh) 2016-01-27
WO2011160913A1 (de) 2011-12-29
EP2586069B1 (de) 2017-03-01
CN105529392A (zh) 2016-04-27
CN102947959A (zh) 2013-02-27
DE102010024545B4 (de) 2022-01-13

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PA0104 Divisional application for international application

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St.27 status event code: A-0-1-A10-A16-div-PA0104

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000