KR20130021711A - Light emitting device package - Google Patents

Abstract

The embodiment may include a light emitting structure including an active layer between a first semiconductor layer, a second semiconductor layer, and the first and second semiconductor layers, an electrode disposed in at least one of the first and second semiconductor layers; A light emitting device package is disposed in a second upper region except for the first upper region and includes a fluorescent layer in contact with at least one of an upper surface and a side surface of the electrode.

Description

A light emitting device package

An embodiment relates to a light emitting device package.

As a typical example of a light emitting device, a light emitting diode (LED) is a device for converting an electric signal into an infrared ray, a visible ray, or a light using the characteristics of a compound semiconductor, and is used for various devices such as household appliances, remote controllers, Automation equipment, and the like, and the use area of LEDs is gradually widening.

In general, miniaturized LEDs are made of a surface mounting device for mounting directly on a PCB (Printed Circuit Board) substrate, and an LED lamp used as a display device is also being developed as a surface mounting device type . Such a surface mount device can replace a conventional simple lighting lamp, which is used for a lighting indicator for various colors, a character indicator, an image indicator, and the like.

As the usage area of LEDs is expanded, researches are being conducted to remove luminescence brightness and odors in the air, which are required for electric light used for living, electric light for rescue signals, and the like.

Recently, in the light emitting device package forming a conformal coating fluorescent layer on the upper surface of the light emitting device, a study for preventing breakage of the fluorescent layer is in progress.

The embodiment provides a light emitting device package that is easy to prevent breakage of a conformal coated fluorescent layer on a portion of the light emitting structure.

The light emitting device package according to the embodiment may include a light emitting structure including an active layer between a first semiconductor layer, a second semiconductor layer, and the first and second semiconductor layers, and a first upper region of at least one of the first and second semiconductor layers. And a fluorescent layer disposed on the electrode disposed in the second upper region except for the first upper region and in contact with at least one of an upper surface and a side surface of the electrode.

In the light emitting device package according to the embodiment, after the electrode is disposed in the first upper region of the light emitting structure, a fluorescent layer is formed in the second upper region except for the first upper region, thereby fluorescing at least one of the side and the upper surface of the electrode. Since the airtightness to the contact of the layer can be secured, and breakage due to contact with the electrode can be prevented, the reliability and the light efficiency are improved.

1 is a cross-sectional view showing a light emitting device according to the embodiment.
FIG. 2 is a perspective view illustrating a light emitting device package including the light emitting device shown in FIG. 1.
3 is a cross-sectional view illustrating the light emitting device package illustrated in FIG. 2.
FIG. 4 is an enlarged view of a block 'P' shown in FIG. 3.
5 is a perspective view showing a lighting apparatus according to the embodiment.
6 is a cross-sectional view showing a cross section along AA of the lighting apparatus shown in FIG. 5.
7 is an exploded perspective view of a liquid crystal display according to a first embodiment.
8 is an exploded perspective view of a liquid crystal display according to a second embodiment.

In the description of the present embodiment, when one element is described as being formed on an "on or under" of another element, the above (above) or below (below) ( on or under includes both the two elements are in direct contact with each other (directly) or one or more other elements are formed indirectly between the two elements (indirectly). Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. Thus, the size of each component does not fully reflect its actual size.

In addition, angles and directions mentioned in the process of describing the structure of the light emitting device array in the present specification are based on those described in the drawings. In the description of the structure of the light emitting device array in the specification, if the reference point and the positional relationship with respect to the angle is not clearly mentioned, reference is made to related drawings.

1 is a cross-sectional view showing a light emitting device according to the embodiment.

Although the light emitting device 10 shown in FIG. 1 is shown as a horizontal type light emitting device, it may be a vertical type light emitting device, but is not limited thereto.

Referring to FIG. 1, the light emitting device 10 includes an active layer 25b between a substrate 25, a first semiconductor layer 25a, a second semiconductor layer 25c, and first and second semiconductor layers 25a and 25c. The light emitting structure (not shown) and the first semiconductor layer 25a on the first electrode 28 and the second semiconductor layer 25c on the second electrode 27 may include.

At this time, the substrate 25 may be made of a conductive substrate or an insulating substrate, for example, sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, and Ga ₂ It may be formed of at least one of 0 ₃ .

The substrate 25 may be wet-washed to remove impurities from the surface, and the substrate 25 may be patterned with a light extraction pattern (PSS) on the surface to improve the light extraction effect. It doesn't.

In addition, the substrate 25 may be made of a material that facilitates the release of heat to improve thermal stability.

Meanwhile, an anti-reflection layer (not shown) may be disposed on the substrate 25 to improve light extraction efficiency, and the anti-reflection layer is called an anti-reflective coating layer, and is basically reflected light from a plurality of interfaces. Use the interference phenomenon between each other. That is, the phase of the light reflected from the other interface is shifted by 180 degrees to cancel each other, and the intensity of the reflected light is weakened. However, the present invention is not limited thereto.

In addition, a buffer layer (not shown) may be disposed on the substrate 25 to mitigate lattice mismatch between the substrate 25 and the first semiconductor layer 25a and to easily grow a plurality of semiconductor layers.

Here, the first semiconductor layer 25a may be disposed on the substrate 25, and when implemented as an n-type semiconductor layer, for example, In _x Al _y Ga _{1 -x- y} N (0 _{≦ x ≦} 1 , 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1), for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, or the like, and for example, Si, N-type dopants such as Ge, Sn, Se, Te may be doped.

An active layer 25b may be disposed on the first semiconductor layer 25a, and the active layer 25b may be formed of a single or multiple quantum well structure and a quantum line using a compound semiconductor material of Group III-V elements. It may be formed of a structure, or a quantum dot (Quantum Dot) structure.

An active layer (25b) is a well having a composition formula of the case formed of a quantum well structure, for _{example, In x Al y Ga 1 -x-} y N (0≤x≤1, 0 ≤y≤1, 0≤x + y≤1) It can have a single or quantum well structure having a layer and a barrier layer having a composition formula of In _a Al _b Ga _{1 -a- b} N (0≤a≤1, 0≤b≤1, 0≤a + b≤1). have. The well layer may be formed of a material having a band gap smaller than the band gap of the barrier layer.

In addition, a conductive clad layer (not shown) may be disposed above or / and below the active layer 25b, and the conductive clad layer may be formed of an AlGaN-based semiconductor, rather than a band gap of the active layer 25b. It can have a large band gap.

The second semiconductor layer 25c may be disposed on the active layer 25b, and the second semiconductor layer 25c may be implemented as a p-type semiconductor layer, for example, In _x Al _{y. Ga 1 -x- y N (0≤x≤1,} 0 ≤y≤1, 0≤x + y≤1) , for a semiconductor material, for example, having a compositional formula of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, and the like, and p-type dopants such as Mg, Zn, Ca, Sr, and Ba may be doped.

The first semiconductor layer 25a, the active layer 25b, and the second semiconductor layer 25c described above may be, for example, metal organic chemical vapor deposition (MOCVD) or chemical vapor deposition (CVD). It may be formed using a plasma chemical vapor deposition (PECVD; Plasma-Enhanced Chemical Vapor Deposition), Molecular Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), etc. It does not limit to this.

In addition, the doping concentrations of the n-type and p-type dopants doped in the first semiconductor layer 25a and the second semiconductor layer 25c may be uniformly or non-uniformly formed. That is, the structure of the plurality of semiconductor layers may be variously formed, but is not limited thereto.

In addition, the first semiconductor layer 25a may be a p-type semiconductor layer, and the second semiconductor layer 25c may be an n-type semiconductor layer. Accordingly, the light emitting structure 120 may be an NP junction, a PN junction, or an NPN junction. And a PNP conjugation structure.

The first semiconductor layer 25a shown in FIG. 1 is an n-type semiconductor layer, and the second semiconductor layer 25c is described as a p-type semiconductor layer.

The first electrode 28 is mesa-etched and removed a portion of the second semiconductor layer 25c and the active layer 25b to expose a portion of the first semiconductor layer 25a, and on the exposed first semiconductor layer 25a. Can be arranged.

In this case, the second electrode 27 may be disposed in the first upper region (not shown) of the second semiconductor layer 25c.

At least one of the first and second electrodes 28 and 27 may include at least one of Au and Ti, or may be an alloy including at least one of Au and Ti, and at least one of the first and second electrodes 28 and 27. One cross-sectional shape may be polygonal, semi-circular or circular in shape, and metal powder may be layered, without being limited thereto.

In addition, a fluorescent layer 15 including phosphor or fluorescent particles may be formed on a second upper region (not shown) in the second semiconductor layer 25c except for the first upper region.

Although the fluorescent layer 15 illustrated in FIG. 1 is disposed on a portion of the second semiconductor layer 25c, the fluorescent layer 15 may be disposed in a region in which the first electrode 28 is not disposed in the first semiconductor layer 25a. 15 may be arranged, but is not limited thereto.

Here, the fluorescent layer 15 may be disposed in the second upper region after the second electrode 27 is disposed in the first upper region.

In addition, the fluorescent layer 15 may be in contact with at least one of the top and side surfaces of the second electrode 27, and the side surface of the fluorescent layer 15, which is in contact with the side surface of the second electrode 27, may be the fluorescent layer 15. May have a constant slope from the lower surface to the upper surface.

The side surface of the fluorescent layer 15 may have the same shape as the side surface of the second electrode 27, and the side surface roughness of the fluorescent layer 15 may be the same as or smaller than the side surface roughness of the second electrode 27. Can be.

The thickness d of the fluorescent layer 15 may be the same as or thicker than the thickness of the second electrode 27, but is not limited thereto.

In addition, a translucent electrode layer (not shown) may be disposed between the second electrode 27 and the second semiconductor layer 25c, but is not limited thereto.

In the light emitting device 10 illustrated in FIG. 1, after the second electrode 27 is disposed in the first upper region of the second semiconductor layer 25c, the circumference of the second electrode 27, that is, the first upper region, is disposed. Formed by conformal coating the fluorescent layer 15 in the second upper region except for, between the side and the top surface of the fluorescent layer 15 in contact with the side of the second electrode 27 when curing the fluorescent layer 15 It is possible to prevent the cracks at the corners of the.

FIG. 2 is a perspective view illustrating a light emitting device package including the light emitting device of FIG. 1, and FIG. 3 is a cross-sectional view of the light emitting device package of FIG. 2.

1 is a transparent perspective view illustrating a part of the light emitting device package 100, and in the embodiment, the light emitting device package 100 is shown as a top view type, but may be a side view type, but is not limited thereto.

2 and 3, the light emitting device package 100 may include a light emitting device 10 and a body 20 on which the light emitting device 10 is disposed.

The light emitting element 10 is explained as being the light emitting element 10 shown in FIG.

The body 20 may include a first partition wall 22 disposed in a first direction (not shown) and a second partition wall 24 disposed in a second direction (not shown) that crosses the first direction. The first and second barrier ribs 22 and 24 may be integrally formed with each other, and may be formed by injection molding, an etching process, or the like, without being limited thereto.

That is, the first and second partitions 22 and 24 may be made of a resin material such as polyphthalamide (PPA), silicon (Si), aluminum (Al), aluminum nitride (AlN), AlO _x , and liquid crystal polymer (PSG). , photo sensitive glass, polyamide 9T (PA9T), neogeotactic polystyrene (SPS), metal, sapphire (Al ₂ O ₃ ), beryllium oxide (BeO), ceramic, and printed circuit board (PCB) It may be formed of at least one of).

The top shape of the first and second barrier ribs 22 and 24 may have various shapes such as triangles, squares, polygons, and circles depending on the use and design of the light emitting device 10, but is not limited thereto.

In addition, the first and second partitions 22 and 24 form a cavity s in which the light emitting device 10 is disposed, and the cross-sectional shape of the cavity s may be formed in a cup shape, a concave container shape, or the like. The first and second partitions 22 and 24 constituting the cavity s may be inclined downward.

In addition, the planar shape of the cavity s may have various shapes such as triangles, squares, polygons, and circles, without being limited thereto.

First and second lead frames 13 and 14 may be disposed on the lower surface of the body 20, and the first and second lead frames 13 and 14 may be formed of a metal material, for example, titanium (Ti) or copper. (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin (Sn), silver (Ag), phosphorus (P), aluminum (Al), It may include one or more materials or alloys of indium (In), palladium (Pd), cobalt (Co), silicon (Si), germanium (Ge), hafnium (Hf), ruthenium (Ru), and iron (Fe). .

In addition, the first and second lead frames 13 and 14 may be formed to have a single layer or a multilayer structure, and the present invention is not limited thereto.

Inner surfaces of the first and second barrier ribs 22 and 24 are formed to be inclined at a predetermined inclination angle with respect to any one of the first and second lead frames 13 and 14, and according to the inclination angle, The reflection angle of the light emitted may vary, and thus the directivity angle of the light emitted to the outside may be adjusted. The concentration of light emitted from the light emitting device 10 to the outside increases as the directivity of the light decreases, while the concentration of light emitted from the light emitting device 10 to the outside decreases as the directivity of the light increases.

The inner surface of the body 20 may have a plurality of inclination angles, but is not limited thereto.

The first and second lead frames 13 and 14 are electrically connected to the light emitting device 10, and are connected to the positive and negative poles of an external power source (not shown), respectively, to provide the light emitting device 10. ) Can be powered.

In an embodiment, the light emitting device 10 is disposed on the first lead frame 13, and the second lead frame 14 is described as being spaced apart from the first lead frame 13. Die-bonded with the first lead frame 13 and wire-bonded by the second lead frame 14 and a wire (not shown), so that power can be supplied from the first and second lead frames 13 and 14.

Here, the light emitting device 10 may be bonded to the first lead frame 13 and the second lead frame 14 with different polarities.

In addition, the light emitting device 10 may be wire-bonded or die-bonded to each of the first and second lead frames 13 and 14, and the connection method is not limited.

In the embodiment, the light emitting device 10 is described as being disposed in the first lead frame 13, but is not limited thereto.

The light emitting device 10 may be adhered to the first lead frame 13 by an adhesive member (not shown).

Here, an insulating dam 16 may be formed between the first and second lead frames 13 and 14 to prevent electrical shorts (shorts) of the first and second lead frames 13 and 14.

In an embodiment, the insulating dam 16 may be formed in a semicircular shape at an upper portion thereof, but is not limited thereto.

The body 13 may be formed with a cathode mark 17. The cathode mark 17 distinguishes the polarity of the light emitting element 10, that is, the polarity of the first and second lead frames 13 and 14, so that the cathode marks 17 are confused when the first and second lead frames 13 and 14 are electrically connected. May be used to prevent this.

The light emitting device 10 may be a light emitting diode. The light emitting diode may be, for example, a colored light emitting diode emitting red, green, blue, or white light, or an ultraviolet (UV) emitting diode emitting ultraviolet light, but is not limited thereto. There may be a plurality of light emitting devices 10 mounted on the frame 13, and at least one light emitting device 10 may be mounted on the first and second lead frames 13 and 14, respectively. The number and mounting positions of 10) are not limited.

A fluorescent layer (not shown) including a phosphor or fluorescent particles may be disposed on the upper surface of the light emitting device 10.

In this case, the fluorescent layer may be conformal coating, but is not limited thereto.

In addition, the body 20 may include a resin material 18 filled in the cavity (s). That is, the resin material 18 may be formed in a double molding structure or a triple molding structure, but is not limited thereto.

In addition, the resin material 18 may be formed in a film form, and may include at least one of at least one kind of phosphor and a light diffusing material, and a translucent silicon material may be used, but is not limited thereto.

FIG. 4 is an enlarged view of a block 'P' shown in FIG. 3.

FIG. 4 omits or briefly describes a configuration overlapping with the light emitting device 10 shown in FIG. 1.

Referring to FIG. 4, the light emitting device package 100 may include a wire w bonded to the first electrode 28 and the second electrode 27 of the light emitting device 10.

Here, the light emitting element 10 has the same structure as the light emitting element 10 shown in FIG. 1, and the same reference numerals are used.

That is, the light emitting device 10 may be disposed on the first lead frame 13.

In this case, the wire w having one side bonded to the first electrode 28 is bonded to the second lead frame 14 at the other side, and the wire w having one side bonded to the second electrode 27 at the other side thereof. 1 may be bonded to the lead frame 13.

Here, one side of the wire w bonded to the first electrode 28 includes a first ball 29a on the first electrode 28, and the wire w bonded to the second electrode 27. One side may include a second ball 29b on the second electrode 27.

In the embodiment, the second ball 29b will be described, and the first ball 29a may be the same as the second ball 29b, but is not limited thereto.

Here, the light emitting device 10 includes a light emitting structure (not shown) including an active layer 25b between the first semiconductor layer 25a, the second semiconductor layer 25c, and the first and second semiconductor layers 25a and 25c. It may include.

That is, the second electrode 27 is disposed in the first upper region (not shown) of the second semiconductor layer 25c, and the fluorescent layer 15 is disposed in the second upper region (not shown) except for the first upper region. This can be formed.

Here, the width b2 of the second ball 29b may be the same as or smaller than the width b1 of the second electrode 27.

Therefore, the second ball 29b may be spaced apart from the top surface of the fluorescent layer 15, and the bottom surface of the second ball 29b may not be in contact with the top surface of the fluorescent layer 15.

Therefore, when the second ball 29b is bonded to the second electrode 27, the fluorescent layer 15 can prevent breakage due to the pressure acting when the second ball 29b is formed.

5 is a perspective view illustrating a lighting apparatus according to an embodiment, and FIG. 6 is a cross-sectional view illustrating an A-A cross section of the lighting apparatus illustrated in FIG. 5.

Hereinafter, in order to describe the shape of the lighting apparatus 300 according to the embodiment in more detail, the longitudinal direction (Z) of the lighting apparatus 300, the horizontal direction (Y) perpendicular to the longitudinal direction (Z), and the length The height direction X perpendicular to the direction Z and the horizontal direction Y will be described.

That is, FIG. 6 is a cross-sectional view of the lighting apparatus 300 of FIG. 5 cut in the plane of the longitudinal direction Z and the height direction X, and viewed in the horizontal direction Y. FIG.

5 and 6, the lighting device 300 may include a body 310, a cover 330 fastened to the body 310, and a closing cap 350 positioned at both ends of the body 310. have.

The light emitting device array 340 is fastened to the lower surface of the body 310, and the body 310 is conductive so that heat generated from the light emitting device package 344 can be discharged to the outside through the upper surface of the body 310. And it may be formed of a metal material having an excellent heat dissipation effect.

The light emitting device array 340 may include a light emitting device package 344 and a substrate 342.

The light emitting device package 344 may be mounted on the substrate 342 in a multicolored or multi-row array to form an array, and may be mounted at the same interval or may be mounted at various separation distances as necessary to adjust brightness. The substrate 342 may be a metal core PCB (MCPCB) or a PCB made of FR4.

The cover 330 may be formed in a circular shape to surround the lower surface of the body 310, but is not limited thereto.

Here, the cover 330 may protect the light emitting device array 340 from foreign matters.

In addition, the cover 330 may prevent glare of light generated from the light emitting device package 344, and a prism pattern may be formed on at least one of an inner surface and an outer surface of the cover 330. In addition, a phosphor may be applied to at least one of an inner surface and an outer surface of the cover 330.

On the other hand, since the light generated from the light emitting device package 344 is emitted to the outside through the cover 330, the cover 330 should have excellent light transmittance, and has sufficient heat resistance to withstand the heat generated by the light emitting device package 344. The cover 330 is preferably formed of a material including polyethylene terephthalate (PET), polycarbonate (PC), polymethyl methacrylate (PMMA), or the like. .

Closing cap 350 is located at both ends of the body 310 may be used for sealing the power supply (not shown). In addition, the closing cap 350 is formed with a power pin 352, the lighting device 300 according to the embodiment can be used immediately without a separate device to the terminal from which the existing fluorescent lamps are removed.

7 is an exploded perspective view of a liquid crystal display according to a first embodiment.

7 is an edge-light method, the liquid crystal display device 400 may include a liquid crystal display panel 410 and a backlight unit 470 for providing light to the liquid crystal display panel 410.

The liquid crystal display panel 410 may display an image using light provided from the backlight unit 470. The liquid crystal display panel 410 may include a color filter substrate 412 and a thin film transistor substrate 414 facing each other with the liquid crystal interposed therebetween.

The color filter substrate 412 may implement a color of an image displayed through the liquid crystal display panel 410.

The thin film transistor substrate 414 is electrically connected to the printed circuit board 418 on which a plurality of circuit components are mounted through the driving film 417. The thin film transistor substrate 414 may apply a driving voltage provided from the printed circuit board 418 to the liquid crystal in response to a driving signal provided from the printed circuit board 418.

The thin film transistor substrate 414 may include a thin film transistor and a pixel electrode formed of a thin film on another substrate of a transparent material such as glass or plastic.

The backlight unit 470 may include a light emitting element array 420 for outputting light, a light guide plate 430 for changing the light provided from the light emitting element array 420 into a surface light source form, and providing the light to the liquid crystal display panel 410. Reflective sheet reflecting the light emitted to the light guide plate 430 to the plurality of films 450, 466, 464 and the light guide plate 430 to uniform the luminance distribution of the light provided from the light source 430 and to improve vertical incidence ( 447).

The light emitting device array 420 may include a PCB substrate 422 such that a plurality of light emitting device packages 424 and a plurality of light emitting device packages 424 may be mounted to form an array.

On the other hand, the backlight unit 470 is a diffusion film 466 for diffusing light incident from the light guide plate 430 toward the liquid crystal display panel 410, and a prism film 450 for condensing the diffused light to improve vertical incidence. ), And may include a protective film 464 for protecting the prism film 450.

8 is an exploded perspective view of a liquid crystal display according to a second embodiment.

However, the parts shown and described in Fig. 7 are not repeatedly described in detail.

8, the liquid crystal display device 500 may include a liquid crystal display panel 510 and a backlight unit 570 for providing light to the liquid crystal display panel 510.

Since the liquid crystal display panel 510 is the same as that described with reference to FIG. 7, a detailed description thereof will be omitted.

The backlight unit 570 includes a plurality of light emitting element arrays 523, a reflective sheet 524, a lower chassis 530 in which the light emitting element arrays 523 and the reflective sheet 524 are accommodated, and an upper portion of the light emitting element arrays 523. It may include a diffusion plate 540 and a plurality of optical film 560 disposed in the.

The light emitting device array 523 may include a PCB substrate 521 such that a plurality of light emitting device packages 522 and a plurality of light emitting device packages 522 are mounted to form an array.

The reflective sheet 524 reflects the light generated from the light emitting device package 522 in the direction in which the liquid crystal display panel 510 is positioned to improve light utilization efficiency.

On the other hand, the light generated from the light emitting element array 523 is incident on the diffusion plate 540, the optical film 560 is disposed on the diffusion plate 540. The optical film 560 may include a diffusion film 566, a prism film 550, and a protective film 564.

Here, the lighting device 300 and the liquid crystal display device (400, 500) may be included in the lighting system, in addition to the light emitting device package, and the purpose of the lighting may also be included in the lighting system.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in each embodiment may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

In addition, the above description has been made with reference to the embodiment, which is merely an example, and is not intended to limit the present invention. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

Claims (13)

A light emitting structure including an active layer between a first semiconductor layer, a second semiconductor layer, and the first and second semiconductor layers;
An electrode disposed in at least one first upper region of the first and second semiconductor layers; And
And a fluorescent layer disposed on a second upper region excluding the first upper region and in contact with at least one of an upper surface and a side surface of the electrode. The method of claim 1, wherein the thickness of the fluorescent layer,
Equal to the thickness of the electrode,
Or a light emitting device package thicker than the thickness of the electrode. The method of claim 1, wherein the side surface of the fluorescent layer,
Light emitting device package having a constant slope from the lower surface to the upper surface of the fluorescent layer. The surface roughness of the fluorescent layer of claim 1,
Is equal to the side roughness of the electrode,
Or a light emitting device package having a lower side roughness of the electrode. The method of claim 1, wherein the fluorescent layer,
A light emitting device package comprising at least one kind of phosphor. The cross-sectional shape of the electrode of claim 1,
A light emitting device package comprising at least one of polygonal, semicircular and circular shape. The method of claim 1, wherein the electrode,
At least one of Au and Ti, or
A light emitting device package which is an alloy containing at least one of Au and Ti. The method of claim 1,
And a light emitting structure, a lead frame electrically connected to the electrode, and a body including a cavity having an open top surface. The method of claim 8,
It includes; resin filled in the cavity;
The resin material,
Light emitting device package comprising a light diffusion material. The method of claim 8,
And a wire electrically connecting the electrode and the lead frame.
The wire,
And a ball disposed on at least one of the electrode and the lead frame. The method of claim 10, wherein the width of the ball,
Equal to the width of the electrode,
A light emitting device package smaller than the width of the electrode. The method of claim 10, wherein the lower surface of the ball,
A light emitting device package spaced apart from the upper surface of the fluorescent layer. An illumination system comprising the light emitting device of any one of claims 1 to 12.

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