KR101813500B1 - Light-emitting device - Google Patents

Abstract

The light emitting device according to the embodiment may include a substrate, a first semiconductor layer sequentially disposed on the substrate, an active layer, and a second semiconductor layer, And a concavo-convex pattern formed on the substrate, the concavo-convex pattern including rounded sides and apexes formed by the side surfaces.

Description

Light-emitting device

An embodiment relates to a light emitting element.

LED (Light Emitting Diode) is a device that converts electrical signals into infrared, visible light or light using the characteristics of compound semiconductors. It is used in household appliances, remote controls, electric sign boards, displays, The use area of LED is becoming wider.

In general, miniaturized LEDs are made of a surface mounting device for mounting directly on a PCB (Printed Circuit Board) substrate, and an LED lamp used as a display device is also being developed as a surface mounting device type . Such a surface mount device can replace a conventional simple lighting lamp, which is used for a lighting indicator for various colors, a character indicator, an image indicator, and the like.

As the use area of the LED is widened as described above, it is important to increase the luminance of the LED as the brightness required for a lamp used in daily life and a lamp for a structural signal is increased.

The embodiment can provide a light emitting device having a structure that can improve the low current characteristics and the ESD characteristics of the light emitting device.

A light emitting device according to an embodiment includes a substrate, a first semiconductor layer sequentially disposed on the substrate, an active layer, and a second semiconductor layer, wherein the substrate has rounded sides, The concavo-convex pattern can be formed.

The light emitting device according to the embodiment has a structure in which a side surface is rounded to grow a light emitting structure on a substrate having a concave and convex pattern including apexes and arranging a light transmitting electrode layer having holes at positions corresponding to apexes of the concave and convex patterns on the light emitting structure, The current applied from the electrode disposed on the light-transmitting electrode layer is not applied to the leakage path formed up to the uppermost layer of the light emitting structure due to the vertex of the concavo-convex pattern when growing the light emitting element, thereby improving the low current characteristic and the ESD immunity scattering There is an advantage that the internal luminous efficiency and the external luminous efficiency can be improved.

1 is a cross-sectional view illustrating a cut-away surface of a light emitting device according to an embodiment.
2 is an operation diagram showing the current movement of the light emitting device shown in Fig.
3 is a perspective view showing an embodiment of the substrate and the translucent electrode layer shown in Fig.
4 is a cross-sectional view illustrating a light emitting device package including a light emitting device according to an embodiment.
5 is a perspective view illustrating a lighting device including a light emitting device according to an embodiment.
FIG. 6 is a cross-sectional view showing a cross-section taken along the line AA 'of the illumination device of FIG. 5;
7 is an exploded perspective view of a liquid crystal display device including the light emitting device according to the first embodiment.
8 is an exploded perspective view of a liquid crystal display device including a light emitting device according to the second embodiment.

Prior to the description of the practice, the terms "on "," under ", " under "Quot;, " on ", and " under " include everything that is directly formed, or formed "indirectly" In addition, the criteria for above or below each layer will be described with reference to the drawings.

In the drawings, the thickness and size of each layer are exaggerated, omitted, or schematically illustrated for convenience and clarity. Therefore, the size of each component does not entirely reflect the actual size.

In this specification, the angles and directions mentioned in the process of describing the structure of the light emitting device are based on those described in the drawings. In the description of the structure of the light emitting device in the specification, reference points and positional relationship with respect to angles are not explicitly referred to, refer to the related drawings.

1 is a cross-sectional view illustrating a cut-away surface of a light emitting device according to an embodiment.

1, a light emitting device 100 includes a substrate 110 and a first semiconductor layer 122, a second semiconductor layer 124, and first and second semiconductor layers 122 And an active layer 126 disposed between the active layer 126 and the active layer 126.

The substrate 110 is a substrate suitable for growing a nitride semiconductor single crystal, and is preferably formed using a material having translucency including sapphire. In addition to sapphire, the substrate 110 may be formed of zinc oxide (ZnO), gallium nitride (GaN), silicon carbide (SiC), and aluminum nitride (AlN).

A buffer layer 112 may be disposed on the substrate 110 to mitigate lattice mismatch between the substrate 110 and the light emitting structure 120. The buffer layer 112 can be formed in a low-temperature atmosphere and can be selected from materials such as GaN, InN, AlN, AlInN, InGaN, AlGaN, and InAlGaN.

Here, the substrate 110 may be patterned by forming a concavo-convex pattern z_1 to z_n using a chemical nickname or scratching using a laser beam before the light emitting structure 120 is disposed, The concave-convex patterns z_1 to z_n can be formed through the etching, and the concave-convex patterns z_1 to z_n can be formed. In this case, the etching method can be any one of a dry etching method and a wet etching method. I do not.

At this time, the concavo-convex patterns z_1 to z_n are rounded to form a curved surface, and the vertex can be formed as a vertex. In addition, the concavo-convex patterns z_1 to z_n may have a circular shape or a polygonal shape as the lower shape, but are not limited thereto.

The uneven patterns z_1 to z_n can increase the external quantum efficiency by increasing the light emitted to the light emitting surface of the light emitting device 100 by scattering the light generated in the light emitting structure 120, The growth in the lateral direction changes the direction of the vertical penetration type dislocation so that the density can be reduced and crystal defects can be reduced.

The buffer layer 112 and the light emitting structure 120 are grown on the concave and convex patterns z_1 to z_n and the concave and convex patterns z_1 to z_n are formed on the top of the concave and convex patterns z_1 to z_n from the flat substrate 110 between the concave- The buffer layer 112 and the light emitting structure 120 may be grown to the corresponding vertex portions.

That is, the active layer 126 disposed between the first semiconductor layer 122, the second semiconductor layer 124, and the first and second semiconductor layers 122 and 124 included in the buffer layer 112 and the light emitting structure 120, Each may merge at a vertex corresponding to the top of the concave-convex patterns z_1 to z_n, and a single leakage path may be formed in a linear shape.

At this time, the concavo-convex patterns z_1 to z_n are transmitted through the distance (C, chord) from the highest vertex to the point where the flat surface of the substrate 110 starts, and the radius (R, radius) It is possible to calculate the height difference (B, rise) with respect to the plane of the distance C from the rounding surface and the vertex at the top to the point where the flat surface of the substrate 110 starts.

This can be calculated by the following equation (1).

Rise (B) = R (Radius) (1-cos [(C (Chord) / 2) / R (Radius)

In other words, Equation (1) shows the height difference (B) with respect to the rounded portion of the corner as described above, and can be determined by the radius (R) and the distance (C, chord).

The light emitting structure 120 may include an active layer 126 disposed between the first semiconductor layer 122, the second semiconductor layer 124, and the first and second semiconductor layers 122 and 124.

That is, the first semiconductor layer 122 may be formed on the buffer layer 112 by supplying SiH ₄ gas containing a first dopant such as NH ₃ , TMGa, or Si, And a cladding layer can be further included.

The first semiconductor layer 122 may include an n-type semiconductor layer to provide electrons to the active layer 126. The first semiconductor layer 122 may be formed only of the first conductive semiconductor layer, (Not shown) under the conductive type semiconductor layer, but the present invention is not limited thereto.

For example, the first conductivity type semiconductor layer may have a composition represented by a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + For example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN or the like and may be doped with an n-type dopant such as Si, Ge or Sn.

The un-doped semiconductor layer is a layer formed for improving the crystallinity of the first conductivity type semiconductor layer. The first conductivity type semiconductor layer is a layer of the first conductivity type except for the n-type dopant is not doped and has lower electrical conductivity than the first conductivity type semiconductor layer. Lt; / RTI >

Accordingly, the active layer 126 and the second semiconductor layer 124 may be sequentially stacked on the first semiconductor layer 122.

First, the active layer 126 is a region where electrons and holes are recombined. As the electrons and the holes are recombined, the active layer 126 transitions to a low energy level and can generate light having a wavelength corresponding thereto.

The active layer 126 includes a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + y? 1) And may be formed of a single quantum well structure or a multi quantum well (MQW) structure. The well layer may be formed of a material having a band gap lower than the band gap of the barrier layer. It may also include a quantum wire structure or a quantum dot structure.

The second semiconductor layer 124 may be formed of, for example, a p-type semiconductor layer. The p-type semiconductor layer may be formed of In _x Al _y Ga _1-xy N semiconductor material having a composition formula of (0≤x≤1, 0≤y≤1, 0≤x + y≤1 ), for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN And a p-type dopant such as Mg, Zn, Ca, Sr, or Ba can be doped.

The first semiconductor layer 122, the active layer 126, and the second semiconductor layer 124 may be formed by, for example, metal organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD) A plasma enhanced chemical vapor deposition (PECVD), a molecular beam epitaxy (MBE), and a hydride vapor phase epitaxy (HVPE) It is not limited thereto.

A third conductive semiconductor layer (not shown) including an n-type or p-type semiconductor layer may be formed on the second semiconductor layer 124. The light emitting element 100 may include np, pn, npn, and a pnp junction structure.

The doping concentration of the conductive dopant in the first semiconductor layer 122 and the second semiconductor layer 124 can be uniformly or nonuniformly formed. That is, the structure of the plurality of semiconductor layers may be variously formed, but the structure is not limited thereto.

In addition, unlike the above, the first semiconductor layer 122 may include a p-type semiconductor layer, and the second semiconductor layer 124 may include an n-type semiconductor layer. That is, the positions of the first semiconductor layer 122 and the second semiconductor layer 124 formed around the active layer 126 may be changed. However, in the following description, the first semiconductor layer 122 includes the n- And are stacked on the substrate 110. In this embodiment,

A part of the active layer 126, the second semiconductor layer 124 and the first semiconductor layer 122 is mesa-etched to expose a part of the first semiconductor layer 122, and the exposed part of the first semiconductor layer 122 A first electrode 130 made of titanium (Ti) or the like may be formed.

The transmissive electrode layer 150 may be formed on the second semiconductor layer 124 and the second electrode 140 may be formed on the outer surface of the transmissive electrode layer 150 such as nickel (Ni).

The transparent electrode layer 150 may be formed of ITO, IZO (In-ZnO), GZO (Ga-ZnO), AZO (Al-ZnO), AGZO / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO, and may be formed on the entire outer surface or a part of the outer side of the second semiconductor layer 124 to prevent current crowding .

The light transmitting electrode layer 150 may be formed with holes 152 at positions corresponding to vertexes of the concave-convex patterns z_1 to z_n.

That is, since the leakage paths are formed in the vertical direction by the uppermost vertex of the concave-convex patterns z_1 to z_n in the lower part of the hole 152, the current supplied from the second electrode 140 is applied to the transparent electrode layer 150 It is possible to prevent the current from being concentrated in the leakage path when it is diffused and supplied to the second semiconductor layer 124.

The light emitting device 20 shown in the embodiment shows a horizontal type light emitting device, and a vertical type light emitting device capable of wire bonding can also be used, but is not limited thereto.

FIG. 2 is an operational view showing the current movement of the light emitting device shown in FIG. 1, and FIG. 3 is a perspective view showing an embodiment of the substrate and the light transmitting electrode layer shown in FIG.

2 and 3, a current (i) supplied from the second electrode 140 is diffused by a plurality of holes 152 formed in the light-transmitting electrode layer 150, (124).

At this time, the uppermost vertex of the concave-convex patterns z_1 to z_n formed on the substrate 110 can generate the leakage path i_d to the second semiconductor layer 124 which is the uppermost layer of the light emitting structure 120.

The vertexes of the concave-convex patterns z_1 to z_n correspond to the holes 152 so that the current i diffused by the translucent electrode layer 150 flows through the leakage path i_d to the substrate 110 It will not leak.

Also, since the diffusion mobility of electrons is low in the second semiconductor layer 122 even if the current (i) is supplied, leakage due to the leakage path i_d does not occur.

3 illustrates a substrate 110 and a light transmitting electrode layer 150. A light emitting structure 120 is disposed between the substrate 110 and the light transmitting electrode layer 150. In FIG. 3, the light emitting structure 120 is omitted do.

As shown in FIG. 3, the substrate 110 has concavo-convex patterns z_1 to z_n at positions corresponding to a plurality of holes 152 formed in the translucent electrode layer 150. [

1, the uppermost vertex of the concavo-convex patterns z_1 to z_n is arranged at the center of the hole 152, so that the hole 152 is formed by the leakage path generated upon growth of the light emitting device 100 It is possible to prevent a current supplied from the second electrode 140 from being supplied to the leakage path.

Here, the concavo-convex patterns z_1 to z_n may be formed in a circular shape and a polygonal shape in the bottom shape, and have a circular shape in FIG. 3, but are not limited thereto.

In addition, although the shape of the plurality of holes 152 is shown as a cylindrical shape, it may be formed in a polygonal columnar shape, but is not limited thereto.

Here, the light-transmitting electrode layer 150 may be disposed between the first electrode 130 and the first semiconductor layer 122, may have a plurality of holes 152, may have a lattice pattern, An electrode line and a connection electrode line connecting the plurality of electrode lines may be formed, but the present invention is not limited thereto.

At this time, the plurality of electrode lines are formed in a stripe structure, and the connection electrode line may electrically connect the plurality of electrode lines to each other, but is not limited thereto.

The transparent electrode layer 152 may be disposed only on the lower portion of the second electrode 140 when the transparent electrode layer 152 has only a stripe structure.

4 is a cross-sectional view illustrating a light emitting device package including a light emitting device according to an embodiment.

4, the light emitting device package 200 includes a body 210 having a cavity formed therein, a light emitting device 220 mounted on a bottom surface of the body 210, and a resin material 230 filled in the cavity 210 And the resin material 230 may include the fluorescent material 240.

The body 210 may be made of a resin material such as polyphthalamide (PPA), silicon (Si), aluminum (Al), aluminum nitride (AlN), liquid crystal polymer (PSG), polyamide 9T (SPS), a metal material, sapphire (Al2O3), beryllium oxide (BeO), a printed circuit board (PCB), and ceramics. The body 210 may be formed by injection molding, etching, or the like, but is not limited thereto.

The inner surface of the body 210 may be formed with an inclined surface. The reflection angle of the light emitted from the light emitting device 220 can be changed according to the angle of the inclined surface, thereby controlling the directivity angle of the light emitted to the outside.

The shape of the cavity formed in the body 210 may be circular, rectangular, polygonal, elliptical, or the like, and may be a curved shape, but is not limited thereto.

The light emitting device 220 is mounted on the bottom surface of the body 210. For example, the light emitting device 220 may be the light emitting device shown in FIG. The light emitting device 220 may be, for example, a colored light emitting device that emits light such as red, green, blue, or white, or a UV (Ultra Violet) light emitting device that emits ultraviolet light. In addition, one or more light emitting elements can be mounted.

Meanwhile, the body 210 may include a first electrode 252 and a second electrode 254. The first electrode 252 and the second electrode 254 may be electrically connected to the light emitting device 220 to supply power to the light emitting device 220.

The first electrode 252 and the second electrode 254 are electrically isolated from each other and can reflect light generated from the light emitting device 220 to increase the light efficiency, To the outside.

The first electrode 252 and the second electrode 254 may be formed of a metal material such as titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum Ta, Pt, Sn, Ag, P, Al, Pd, Co, Si, Ge, Ge), hafnium (Hf), ruthenium (Ru), and iron (Fe). The first electrode 252 and the second electrode 254 may have a single-layer structure or a multi-layer structure, but the present invention is not limited thereto.

The resin material 230 may be filled in the cavity and may include the fluorescent material 240. The resin material 230 may be formed of transparent silicone, epoxy, or other resin material, and may be filled in the cavity and then formed in a manner of ultraviolet ray or thermal curing.

The phosphor 240 may be selected according to the wavelength of the light emitted from the light emitting device 220 so that the light emitting device package 200 can realize white light.

The phosphor 240 included in the resin material 230 may be a blue light emitting phosphor, a blue light emitting phosphor, a green light emitting phosphor, a yellow light emitting phosphor, a yellow light emitting phosphor, , An orange light-emitting fluorescent substance, and a red light-emitting fluorescent substance may be applied.

That is, the phosphor 240 is excited by the light having the first light emitted from the light emitting device 220 to generate the second light. For example, when the light emitting element 220 is a blue light emitting diode and the phosphor 240 is a yellow phosphor, the yellow phosphor may be excited by blue light to emit yellow light, and blue light emitted from the blue light emitting diode and blue light The light emitting device package 200 can provide white light as yellow light generated by excitation by light is mixed.

Similarly, when the light emitting element 220 is a green light emitting diode, the magenta phosphor or the blue and red phosphors 240 are mixed. When the light emitting element 220 is a red light emitting diode, A case where a phosphor is used in combination is exemplified.

The fluorescent material 240 may be a known material such as YAG, TAG, sulfide, silicate, aluminate, nitride, carbide, nitridosilicate, borate, fluoride or phosphate.

FIG. 5 is a perspective view showing a lighting device including a light emitting device according to an embodiment, and FIG. 6 is a cross-sectional view taken along the line A-A 'of the lighting device of FIG.

In order to describe the shape of the illumination device 300 according to the embodiment in detail, the longitudinal direction Z of the illumination device 300, the horizontal direction Y perpendicular to the longitudinal direction Z, The direction Z and the horizontal direction Y and the vertical direction X perpendicular to the horizontal direction Y will be described.

6 is a cross-sectional view of the lighting apparatus 300 of FIG. 5 cut in the longitudinal direction Z and the height direction X and viewed in the horizontal direction Y. FIG.

5 and 6, the lighting device 300 may include a body 310, a cover 330 coupled to the body 310, and a finishing cap 350 positioned at opposite ends of the body 310 have.

The light emitting device module 340 is coupled to the lower surface of the body 310. The body 310 is electrically conductive so that heat generated from the light emitting device module 340 can be emitted to the outside through the upper surface of the body 310. [ And a metal material having an excellent heat dissipation effect.

The light emitting device module 340 includes a light emitting device package 344 including a PCB substrate 342 and a light emitting device (not shown), and the light emitting device package 344 is mounted on the PCB substrate 342 in a multi- They can be mounted to form an array, can be mounted at equal intervals, or can be mounted with various spacing distances as needed to adjust brightness and the like. As the PCB substrate 342, MCPCB (Metal Core PCB) or FR4 material PCB can be used.

The cover 330 may be formed in a circular shape so as to surround the lower surface of the body 310, but is not limited thereto.

The cover 330 protects the internal light emitting element module 340 from foreign substances or the like. In addition, the cover 330 may include diffusion particles to prevent glare of light generated in the light emitting device package 344 and uniformly emit light to the outside, and may include at least one of an inner surface and an outer surface of the cover 330 A prism pattern or the like may be formed on one side. Further, the phosphor may be coated on at least one of the inner surface and the outer surface of the cover 330.

Meanwhile, since the light generated in the light emitting device package 344 is emitted to the outside through the cover 330, the cover 330 should have a high light transmittance and sufficient heat resistance to withstand the heat generated in the light emitting device package 344 The cover 330 is preferably formed of a material including polyethylene terephthalate (PET), polycarbonate (PC), or polymethyl methacrylate (PMMA) .

The finishing cap 350 is located at both ends of the body 310 and can be used for sealing the power supply unit (not shown). In addition, the finishing cap 350 is provided with the power pin 352, so that the lighting device 300 according to the embodiment can be used immediately without a separate device on the terminal from which the conventional fluorescent lamp is removed.

7 is an exploded perspective view of a liquid crystal display device including the light emitting device according to the first embodiment.

7, the liquid crystal display device 400 may include a liquid crystal display panel 410 and a backlight unit 470 for providing light to the liquid crystal display panel 410 in an edge-light manner.

The liquid crystal display panel 410 can display an image using the light provided from the backlight unit 470. The liquid crystal display panel 410 may include a color filter substrate 412 and a thin film transistor substrate 414 facing each other with a liquid crystal therebetween.

The color filter substrate 412 can realize the color of the image to be displayed through the liquid crystal display panel 410.

The thin film transistor substrate 414 is electrically connected to a printed circuit board 418 on which a plurality of circuit components are mounted through a driving film 417. The thin film transistor substrate 414 may apply a driving voltage provided from the printed circuit board 418 to the liquid crystal in response to a driving signal provided from the printed circuit board 418.

The thin film transistor substrate 414 may include a thin film transistor and a pixel electrode formed as a thin film on another substrate of a transparent material such as glass or plastic.

The backlight unit 470 includes a light emitting device module 420 that outputs light, a light guide plate 430 that changes the light provided from the light emitting device module 420 into a surface light source to provide the light to the liquid crystal display panel 410, A plurality of films 450, 466 and 464 for uniforming the luminance distribution of the light provided from the light guide plate 430 and improving the vertical incidence property and a reflective sheet 430 for reflecting the light emitted to the rear of the light guide plate 430 to the light guide plate 430 440).

The light emitting device module 420 may include a PCB substrate 322 for mounting a plurality of light emitting device packages 424 and a plurality of light emitting device packages 424 to form an array.

Meanwhile, the light emitting device included in the light emitting device package 424 is omitted from FIG. 1.

The backlight unit 470 includes a diffusion film 466 for diffusing light incident from the light guide plate 430 toward the liquid crystal display panel 410 and a prism film 450 for enhancing vertical incidence by condensing the diffused light. And may include a protective film 464 for protecting the prism film 450.

8 is an exploded perspective view of a liquid crystal display device including a light emitting device according to the second embodiment.

However, the parts shown and described in Fig. 7 are not repeatedly described in detail.

8, the liquid crystal display device 500 may include a liquid crystal display panel 510 and a backlight unit 570 for providing light to the liquid crystal display panel 510 in a direct-down manner.

Since the liquid crystal display panel 510 is the same as that described with reference to FIG. 7, detailed description is omitted.

The backlight unit 570 includes a plurality of light emitting element modules 523, a reflective sheet 524, a lower chassis 530 housing the light emitting element module 523 and the reflective sheet 524, A plurality of optical films 560, and a diffuser plate 540 disposed on the diffuser plate 540. [

The light emitting device module 523 may include a PCB substrate 521 to which a plurality of light emitting device packages 522 and a plurality of light emitting device packages 522 are mounted to form an array.

The reflection sheet 524 reflects light generated from the light emitting device package 522 in a direction in which the liquid crystal display panel 510 is positioned, thereby improving light utilization efficiency.

The light generated from the light emitting device module 523 is incident on the diffusion plate 540 and the optical film 560 is disposed on the diffusion plate 540. The optical film 560 may include a diffusion film 566, a prism film 550, and a protective film 564.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It will be appreciated that various modifications and applications are possible without departing from the scope of the present invention. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

Claims (8)

Board;
A light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer sequentially disposed on the substrate;
A buffer layer disposed between the substrate and the first semiconductor layer in contact with the substrate and the first semiconductor layer;
A first electrode disposed on the exposed upper surface of the first semiconductor layer;
A first transparent electrode layer disposed between the first electrode and the first semiconductor layer and having a plurality of holes or a lattice pattern;
A second transparent electrode layer disposed on the second semiconductor layer so as to be in contact with the second semiconductor layer and having a columnar hole; And
And a second electrode disposed on a part of the upper surface of the second transparent electrode layer,
Wherein the upper surface of the substrate includes a protruding and protruding pattern,
The concavo-
The side surface is rounded, the upper surface is the vertex of the side surface,
The height of the rounded side face of the concavo-convex pattern is calculated by the following formula:
Rise (B) = R (Radius) (1-cos [(C (Chord) / 2) / R (Radius)
(R is the radius of the rounded circle, C is the length of the rounded side, and B is the height of the rounded side). delete The method according to claim 1,
And the cylindrical hole is disposed at a position corresponding to the vertex of the concavo-convex pattern. 4. The semiconductor device according to claim 3, wherein the width of the columnar hole
And the width of the concave-convex pattern is smaller than the width of the concave-convex pattern delete 4. The semiconductor device according to claim 3, wherein at the center of the columnar hole,
And the vertexes are disposed.
delete delete

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