KR20130021290A - Light emitting device, light emitting apparatus and fabricating method for light emitting device - Google Patents

Abstract

PURPOSE: A light emitting device, a light emitting module, and a method for manufacturing the light emitting device are provided to improve the efficiency of heat radiation by using a supporting member surrounding first and second electrodes. CONSTITUTION: A first electrode(135) is formed under a first conductive semiconductor layer. A reflection electrode layer(131) is arranged under a second conductive semiconductor layer. A second electrode(137) is formed under the reflection electrode layer. A supporting member(151) is arranged beneath the first conductive semiconductor layer and the reflection electrode layer. The supporting member is arranged along the circumference of the first and second electrodes.

Description

LIGHT EMITTING DEVICE, LIGHT EMITTING APPARATUS AND FABRICATING METHOD FOR LIGHT EMITTING DEVICE}

The embodiment relates to a light emitting device, a light emitting module, and a manufacturing method of the light emitting device.

III-V nitride semiconductors (group III-V nitride semiconductors) are widely recognized as key materials for light emitting devices such as light emitting diodes (LEDs) and laser diodes (LD) due to their physical and chemical properties. Ⅲ-Ⅴ nitride semiconductor is made of a semiconductor material having a compositional formula of normal _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1).

Light emitting diodes (LEDs) are a type of semiconductor device that transmits and receives signals by converting electricity into infrared rays or light using characteristics of a compound semiconductor.

 LEDs or LDs using such nitride semiconductor materials are widely used in light emitting devices for obtaining light, and have been applied to light sources of various products such as keypad light emitting units, display devices, electronic displays, and lighting devices of mobile phones.

The embodiment provides a new light emitting device.

The embodiment provides a wafer level packaged light emitting device.

The embodiment provides a light emitting device including a support member having a ceramic additive around a first electrode and a second electrode, and a method of manufacturing the same.

The embodiment provides a light emitting device including a convex portion on a surface opposite to a surface on which a semiconductor layer is formed among surfaces of a substrate of the light emitting device, and a method of manufacturing the same.

The embodiment provides a light emitting module, a light emitting device package and a lighting device having a light emitting device.

According to an embodiment, there is provided a light emitting device including: a light transmissive substrate having a plurality of convex portions on a first surface thereof; A first conductive semiconductor layer on a second side opposite to the first surface of the substrate; The second conductive semiconductor layer; A light emitting structure including an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer; A first electrode under the first conductive semiconductor layer; A reflective electrode layer disposed under the second conductive semiconductor layer; A second electrode under the reflective electrode layer; A support member disposed below the first conductive semiconductor layer and the reflective electrode layer and disposed around the first and second electrodes; A first connection electrode disposed at least partially within the support member and formed under the first electrode; And a second connection electrode disposed at least partially within the support member and formed below the second electrode, wherein the substrate has a thickness thinner than that of the support member.

The light emitting module according to the embodiment includes the above light emitting device; And a module substrate including a first electrode pad and a second electrode pad, wherein the light emitting devices are arrayed on the module substrate, and a first connection electrode of the light emitting devices is connected to the first electrode pad of the module substrate. The second electrode pad is connected to the second connection electrode of the light emitting device.

In one embodiment, a method of manufacturing a light emitting device includes: forming a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a second surface of a substrate; Etching to expose a portion of the first conductive semiconductor layer; Forming a reflective electrode layer on the light emitting structure; Forming an insulating layer on the reflective electrode layer and the light emitting structure; Forming a first electrode on the first conductive semiconductor layer and a second electrode on the reflective electrode layer; Forming a first connection electrode on the first electrode and a second connection electrode on the second electrode; Forming a support member on the insulating layer to have a height of upper surfaces of the first and second connection electrodes; And forming a thickness of the substrate to 30-50 μm or less, and forming a plurality of convex portions on the first surface opposite to the second surface of the substrate.

The embodiment can improve the mounting process of the light emitting device in the flip method.

The embodiment can provide a light emitting device packaged at the wafer level, thereby eliminating the packaging process, thereby reducing the manufacturing process.

The embodiment can improve the light extraction efficiency of the light emitting device.

The embodiment can improve the heat radiation efficiency of the light emitting device.

The embodiment can improve the reliability of the light emitting device, the display device, and the lighting device having the light emitting device mounted in a flip method.

1 is a side cross-sectional view of a light emitting device according to an embodiment.
FIG. 2 is a bottom view of the light emitting device of FIG. 1.
3 to 10 are views illustrating a manufacturing process of the light emitting device according to the first embodiment.
11 is a side cross-sectional view of a light emitting module in an embodiment.
12 is a view showing another example of a light emitting device according to the embodiment.
12 is a side cross-sectional view of a light emitting device according to the third embodiment.
13 is a view showing a light emitting device package having a light emitting device according to the embodiment.
14 is a diagram illustrating a display device according to an exemplary embodiment.
15 is a diagram illustrating another example of a display device according to an exemplary embodiment.
16 is a view showing a lighting apparatus according to an embodiment.
17 is a view illustrating luminous intensity according to a substrate thickness of a light emitting device according to an embodiment.

In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be formed "on" or "under" a substrate, each layer The terms " on "and " under " include both being formed" directly "or" indirectly " Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.

Hereinafter, the present invention will be described with reference to the accompanying drawings.

1 is a side cross-sectional view illustrating a light emitting device according to an embodiment, and FIG. 2 is a view illustrating an example of a bottom view of the light emitting device of FIG. 1.

1 and 2, the light emitting device 100 may include a substrate 111, a first semiconductor layer 113, a first conductive semiconductor layer 115, an active layer 117, and a second conductive semiconductor layer ( 119, the reflective electrode layer 131, the insulating layer 133, the first electrode 135, the second electrode 137, the first connection electrode 141, the second connection electrode 143, and the support member 151. ).

The substrate 111 may use a light transmissive, insulating or conductive substrate, for example, sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, Ga ₂ O ₃ At least one may be used. Hereinafter, the substrate 111 will be described as an example of a transparent substrate such as sapphire, the refractive index is a refractive index of the refractive index of the compound semiconductor layer (for example 2.4 to 2.5) or less, for example to have 2 or less or 1.6 to 1.8. do. A plurality of convex portions 111A may be formed on the top surface S1 of the substrate 111, and the plurality of convex portions 111A may be formed through etching of the substrate 111 or may have a separate roughness. It can form a pattern such as The convex portion 111A may have a hemispherical shape or a dome shape, and may be formed in a stripe shape or a matrix shape.

Each maximum width R1 of the convex portion 111A is wider than the height of the convex portion 111A, and may be, for example, 1.5 to 2.6 μm. The height R2 of each of the convex portions 111A is formed to be 1.0 to 1.5 μm, and the interval T4 between the convex portions 111A is wider than the width R1 of each of the convex portions 111A. May be spaced apart from each other, and may be arranged at equal intervals, for example, in a range of 3.5 ± 0.5 μm.

The thickness T3 of the substrate 111 may be 150 μm or less, and the thicker the thickness T3 of the substrate 111 is, the light intensity extracted through the top surface S1 of the substrate 111. Has a problem of deterioration. According to the embodiment, the thickness T3 of the substrate 111 includes 30 to 50 μm, and the luminous intensity extracted through the surface of the substrate 111 is improved by about 10% compared to a substrate having a thickness of 150 μm.

As shown in FIG. 17, when the light intensity according to the thickness of the substrate is not found, when the thickness T = 0 of the substrate 111 is absent, the light intensity is 72%, and the first thickness ST1 to the second thickness ST2 are measured. The range appears 10% or more higher than the third thickness ST3 and 20% higher than the fourth thickness ST4. FIG. 17 shows that the thickness of each substrate is set to 150 μm (ST3) at 100% to compare the respective thicknesses. When the thickness is ST1, light intensity is improved by 10% or more compared to the thickness (ST3) of 150 μm. Compared with the thickness ST4, there is a 20% or more brightness improvement effect. When the thickness of the substrate becomes thinner than 30 mu m, the luminous intensity drops rapidly to about 74.4%, and when it is thicker than 150 mu m, the efficiency decreases in terms of luminous intensity. The embodiment is to provide a substrate having a thickness of 30 ~ 50㎛ best luminous intensity. When the thickness of the substrate is 30 ~ 50㎛, compared with the thickness of 150㎛ has a brightness improvement effect of almost 10% or more, it is possible to maximize the light extraction efficiency according to the embodiment. Such brightness may represent the light extraction efficiency as described above by the plurality of convex portions formed on the top surface of the substrate and the thickness of the substrate.

The thickness T3 of the substrate 111 is a thickness excluding the convex portion 111A. When the thickness T3 of the substrate 111 is made too thin, the wafer may be convex or concave after the manufacturing process. As a critical thickness of the substrate 111 for improving the brightness while preventing such a problem, a thickness of 50 μm or less, for example, 30 to 50 μm may be used, and the thickness may include the strength and the thickness T1 of the support member 151. The value is considered. According to the embodiment, a plurality of convex portions 111A are arranged on the top surface of the light-transmissive substrate 111, and the thickness T3 of the substrate 111 is critically significant in light extraction efficiency, for example, 30 to 50 μm. It will be formed to a thickness of. In addition, in the embodiment, the thickness of the light emitting device 100 may be formed to a thickness of 100 to 150 μm. In this case, when the thickness T3 of the substrate 111 is 30 to 50 μm, the support member 151 may be formed. The thickness T1 may be formed in a range of 45 μm to 115 μm, and the thickness of the semiconductor structures 113 and 120 may be formed in a range of 5 μm to 8 μm. According to the thickness T1 of the support member 151, the thickness of the light emitting device may be 150 μm or more.

The thickness T3 of the substrate 111 may be formed in a thickness range of 1/3 to 1/5 of the thickness of the light emitting device, and may be formed at least thinner than the thickness T1 of the support member 151. Can be. In addition, the thickness T3 of the substrate 111 may be about 600% to 800% thicker than the thickness of the semiconductor structures 113 and 120.

In addition, when the light-transmitting substrate 111 is removed, a laser lift-off (LLO) method is used, which damages the semiconductor layer, particularly the active layer 117.

A semiconductor structure is disposed below the substrate 111. The semiconductor structure includes a plurality of compound semiconductor layers, and may be defined as semiconductor layers between the substrate and the reflective electrode layer.

The first semiconductor layer 113 may be formed under the substrate 111. The first semiconductor layer 113 may be formed using a group 2 to 6 compound semiconductor. The first semiconductor layer 113 may be formed of at least one layer or a plurality of layers using a group 2 to 6 compound semiconductor. The first semiconductor layer 113 may include, for example, at least one of a semiconductor layer using a group III-V compound semiconductor, for example, GaN, InN, AlN, InGaN, AlGaN, InAlGaN, or AlInN. The first semiconductor layer 113 may be formed of an oxide such as a ZnO layer, but is not limited thereto.

The first semiconductor layer 113 may be formed as a buffer layer, and the buffer layer may reduce the difference in lattice constant between the substrate and the nitride semiconductor layer.

The first semiconductor layer 113 may be formed of an undoped semiconductor layer. The undoped semiconductor layer may be implemented as a group III-V compound semiconductor, for example, a GaN-based semiconductor. The undoped semiconductor layer has a first conductivity type even when the dopant is not intentionally doped with the conductive type dopant in the manufacturing process, and has a lower concentration than that of the conductive type dopant of the first conductive semiconductor layer 115.

The first semiconductor layer 113 may be formed of at least one of a buffer layer and an undoped semiconductor layer, but is not limited thereto.

The light emitting structure 120 may be formed on the first semiconductor layer 113. The light emitting structure 120 includes a Group III-V compound semiconductor, for example, In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). It has a semiconductor which has a composition formula, and can emit a predetermined | prescribed peak wavelength within the wavelength range of an ultraviolet band to a visible light band.

The light emitting structure 120 is disposed between the first conductive semiconductor layer 115, the second conductive semiconductor layer 119, the first conductive semiconductor layer 115 and the second conductive semiconductor layer 119. The formed active layer 117 is included.

A first conductive semiconductor layer 115 may be formed under the first semiconductor layer 113. The first conductive semiconductor layer 115 is implemented as a Group III-V compound semiconductor doped with a first conductive dopant, and the first conductive semiconductor layer 115 is an N-type semiconductor layer. The conductive dopant is an N-type dopant and includes Si, Ge, Sn, Se, Te.

A super lattice structure in which different semiconductor layers are alternately stacked may be formed between the first conductive semiconductor layer 115 and the first semiconductor layer 113, and the super lattice structure may reduce lattice defects. Can be. Each layer of the super lattice structure may be laminated to a thickness of several A or more.

A first conductive clad layer may be formed between the first conductive semiconductor layer 115 and the active layer 117. The first conductive clad layer may be formed of a GaN-based semiconductor, and the band gap may be formed to be greater than or equal to the band gap of the active layer 117. The first conductive clad layer serves to constrain the carrier.

An active layer 117 is formed under the first conductive semiconductor layer 115. The active layer 117 may optionally include a single quantum well, a multiple quantum well (MQW), a quantum wire structure or a quantum dot structure, and may include a period of the well layer and the barrier layer. The well layer includes a composition formula of In _x Al _y Ga _{1 -x- y} N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1), and the barrier layer is In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) may be included.

The period of the well layer / barrier layer may be formed in one or more cycles using, for example, a laminated structure of InGaN / GaN, AlGaN / GaN, InGaN / AlGaN, InGaN / InGaN. The barrier layer may be formed of a semiconductor material having a band gap higher than that of the well layer.

A second conductive semiconductor layer 119 is formed below the active layer 117. The second conductive semiconductor layer 119 may be formed of any one of a semiconductor doped with a second conductive dopant, for example, a compound semiconductor such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, or AlInN. The second conductive semiconductor layer 119 is a P-type semiconductor layer, and the second conductive dopant is a P-type dopant and may include Mg, Zn, Ca, Sr, and Ba.

The second conductive semiconductor layer 119 may include a superlattice structure, and the superlattice structure may include an InGaN / GaN superlattice structure or an AlGaN / GaN superlattice structure. The superlattice structure of the second conductive semiconductor layer 119 may abnormally diffuse the current included in the voltage to protect the active layer 117.

In addition, the first conductive semiconductor layer 115 may be a P-type semiconductor layer, and the second conductive semiconductor layer 119 may be an N-type semiconductor layer. A third conductive semiconductor layer having a polarity opposite to that of the second conductive type may be formed on the second conductive semiconductor layer 119.

The light emitting device 100 may define the first conductive semiconductor layer 115, the active layer 117, and the second conductive semiconductor layer 119 as a light emitting structure 120, and the light emitting structure may be NP. It can be implemented with any one of a junction structure, a PN junction structure, an NPN junction structure, and a PNP junction structure. Herein, P is a P-type semiconductor layer, and N is an N-type semiconductor layer, and the - indicates a structure in which the P-type semiconductor layer and the N-type semiconductor layer are in direct contact or indirect contact. Hereinafter, for convenience of description, the uppermost layer of the light emitting structure 120 will be described as the second conductive semiconductor layer 119.

The reflective electrode layer 131 is formed under the second conductive semiconductor layer 119. The reflective electrode layer 131 includes at least one of an ohmic contact layer, a reflective layer, a diffusion barrier layer, and a protective layer.

The reflective electrode layer 131 may be formed of a structure of an ohmic contact layer / reflective layer / diffusion prevention layer / protective layer, a structure of a reflective layer / diffusion prevention layer / protective layer, or may be formed of a structure of an ohmic contact layer / reflective layer / protective layer It may be formed of a reflective layer / diffusion preventing layer or a reflective layer.

The ohmic contact layer may contact the bottom of the second conductive semiconductor layer 119, and the contact area of the ohmic contact layer may be 70% or more of the lower surface area of the second conductive semiconductor layer 119. The ohmic contact layer may include indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IZAZO), indium gallium zinc oxide (IGZO), and indium gallium tin oxide (IGTO). Selected from aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), SnO, InO, INZnO, ZnO, IrOx, RuOx, NiO, Ni, Cr, and optional compounds or alloys thereof , At least one layer. The ohmic contact layer may have a thickness of about 1 to about 1,000 mm 3.

The reflective layer may be selected from a material having a reflectance of 70% or more under the ohmic contact layer, for example, a metal of Al, Ag, Ru, Pd, Rh, Pt, Ir, or an alloy of two or more of the above metals. The metal of the reflective layer may be in ohmic contact under the second conductive semiconductor layer 119, in which case the ohmic contact layer may not be formed. The thickness of the reflective layer may be formed to 1 ~ 10,000Å.

The diffusion barrier layer may be selected from Au, Cu, Hf, Ni, Mo, V, W, Rh, Ru, Pt, Pd, La, Ta, Ti and two or more alloys thereof. The diffusion barrier layer prevents interlayer diffusion at the boundary between different layers. The thickness of the diffusion barrier layer may be formed to 1 ~ 10,000 ~.

The protective layer may be selected from Au, Cu, Hf, Ni, Mo, V, W, Rh, Ru, Pt, Pd, La, Ta, Ti and two or more alloys thereof, and the thickness is 1 to 10,000 Å. It can be formed as.

The reflective electrode layer 131 may include a laminated structure of a transparent electrode layer / reflective layer, and the transparent electrode layer may include indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), and indium aluminum zinc oxide), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), SnO, InO, INZnO, ZnO, IrOx , RuOx may be selected from the group. A reflective layer may be formed below the transparent electrode layer, and the reflective layer may include a structure in which a first layer having a first refractive index and a second layer having a second refractive index are alternately stacked in at least two pairs. The second refractive index is different from each other, and the first layer and the second layer may be formed of a material between 1.5 and 2.4, for example, a conductive or insulating material, and such a structure may be defined as a distributed bragg reflection (DBR) structure.

A light extraction structure such as roughness may be formed on a surface of at least one of the second conductive semiconductor layer 119 and the reflective electrode layer 131, and the light extraction structure may change a critical angle of incident light. Therefore, the light extraction efficiency can be improved.

The first electrode 135 may be formed under a portion A1 of the first conductive semiconductor layer 115, and the second electrode 137 may be formed under a portion of the reflective electrode layer 131. A first connection electrode 141 is formed below the first electrode 135, and a second connection electrode 143 is formed below the second electrode 137.

The first electrode 135 is electrically connected to a partial region A1 of the first conductive semiconductor layer 115. The first electrode 135 may include an electrode pad, but is not limited thereto.

The first electrode 135 is spaced apart from side surfaces of the active layer 117 and the second conductive semiconductor layer 119 and is formed to have a smaller area than the partial area A1 of the first conductive semiconductor layer 115. Can be.

The second electrode 137 may be in physical or / and electrical contact with the second conductive semiconductor layer 119 through the reflective electrode layer 131. The second electrode 137 includes an electrode pad.

The first electrode 135 and the second electrode 137 include at least one of an adhesive layer, a reflective layer, a diffusion barrier layer, and a bonding layer. The adhesive layer is in ohmic contact under a portion A1 of the first conductive semiconductor layer 115, and may be formed of Cr, Ti, Co, Ni, V, Hf, and an optional alloy thereof. May be formed to 1 ~ 1,000Å. The reflective layer is formed under the adhesive layer, the material may be formed of Ag, Al, Ru, Rh, Pt, Pd and an optional alloy thereof, the thickness may be formed of 1 ~ 10,000Å. The diffusion barrier layer is formed under the reflective layer, and the material may be formed of Ni, Mo, W, Ru, Pt, Pd, La, Ta, Ti, and optional alloys thereof, the thickness of which is 1 to 10,000Å. It includes. The bonding layer is a layer bonded to the first connection electrode 141, and the material may be formed of Al, Ru, Rh, Pt, and an optional alloy thereof. The thickness of the bonding layer may be 1 to 10,000 1. Can be.

The first electrode 135 and the second electrode 137 may have the same stacked structure or different stacked structures. The stack structure of the second electrode 137 may be smaller than that of the first electrode 135. For example, the first electrode 135 may be formed of an adhesive layer / reflection layer / diffusion prevention layer / bonding layer or an adhesive layer / diffusion layer. The prevention layer / bonding layer may be formed, and the second electrode 137 may be formed in the structure of the adhesive layer / reflective layer / diffusion prevention layer / bonding layer or the structure of the adhesive layer / diffusion prevention layer / bonding layer.

The upper surface area of the second electrode 137 may be the same area as the lower surface area of the reflective electrode layer 131 or at least larger than the upper surface area of the second connection electrode 143.

At least one of the first electrode 135 and the second electrode 137 may further have a current diffusion pattern such as an arm or finger structure branched from the electrode pad. In addition, one or more electrode pads of the first electrode 135 and the second electrode 137 may be formed, but are not limited thereto.

The first connection electrode 141 and the second connection electrode 143 provide a lead function for supplying power and a heat dissipation path. The first connection electrode 141 and the second connection electrode 143 may have a columnar shape, and may include, for example, a shape such as a spherical shape, a circular column, or a polygonal column or a random shape. Here, the polygonal pillar may be conformal or not conformal, but is not limited thereto. An upper surface or a lower surface of the first connection electrode 141 and the second connection electrode 143 may include a circle or a polygon, but is not limited thereto. Lower surfaces of the first connection electrode 141 and the second connection electrode 143 may be formed to have different areas from the upper surface. For example, the lower surface area may be larger or smaller than the upper surface area.

At least one of the first connection electrode 141 and the second connection electrode 143 may be formed smaller than the width of the lower surface of the light emitting structure 120, and larger than the width or diameter of the lower surface of each of the electrodes 135 and 137. Can be formed.

The diameter or width of the first connection electrode 141 and the second connection electrode 143 may be formed to 1㎛ ~ 100,000㎛, the height may be formed of 1㎛ ~ 100,000㎛. Here, the thickness H1 of the first connection electrode 141 may be longer than the thickness H2 of the second connection electrode 143, and the first connection electrode 141 and the second connection may be formed. The lower surface of the electrode 143 may be disposed on the same plane (ie, the horizontal surface).

The first connection electrode 141 and the second connection electrode 143 may be formed as a single layer using any one metal or alloy, and the width and height of the single layer may be formed to be 1 μm to 100,000 μm. For example, the thickness of the single layer layer may be formed at a height thicker than the thickness of the second electrode 143.

The first connection electrode 141 and the second connection electrode 143 are Ag, Al, Au, Cr, Co, Cu, Fe, Hf, In, Mo, Ni, Si, Sn, Ta, Ti, W and these It may be formed of any one of an optional alloy of metal. The first connection electrode 141 and the second connection electrode 143 may be formed of In, Sn, Ni, Cu, and an optional alloy thereof to improve adhesion between the first electrode 135 and the second electrode 137. It may be plated with either metal. At this time, the plating thickness is 1 ~ 100,000Å is applicable.

A plating layer may be further formed on surfaces of the first connection electrode 141 and the second connection electrode 143, and the plating layer may be formed of Tin or an alloy thereof, Ni or an alloy thereof, or a Tin-Ag-Cu alloy. And, the thickness may be formed to 0.5㎛ ~ 10㎛. Such a plating layer can improve the bonding with other bonding layers.

The insulating layer 133 may be formed under the reflective electrode layer 131. The insulating layer 133 is formed on a lower surface of the second conductive semiconductor layer 119, side surfaces of the second conductive semiconductor layer 119 and the active layer 117, and the first conductive semiconductor layer 115. The lower surface of the partial region A1 may be formed. The insulating layer 133 is formed in the lower region of the light emitting structure 120 except for the reflective electrode layer 131, the first electrode 135, and the second electrode 137. The lower part of the to be electrically protected.

The insulating layer 133 includes an insulating material or an insulating resin formed of at least one of an oxide, nitride, fluoride, and sulfide having at least one of Al, Cr, Si, Ti, Zn, and Zr. The insulating layer 133 may be selectively formed of, for example, SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , or TiO ₂ . The insulating layer 133 may be formed as a single layer or a multilayer, but is not limited thereto. The insulating layer 133 is formed to prevent an interlayer short of the light emitting structure 120 when a metal structure for flip bonding is formed under the light emitting structure 120.

The insulating layer 133 may not be formed on the bottom surface of the reflective electrode layer 131, but may be formed only on the surface of the light emitting structure 120. The insulating support member 151 is formed on the lower surface of the reflective electrode layer 131, so that the insulating layer 133 may not extend to the lower surface of the reflective electrode layer 131.

The insulating layer 133 may have a DBR structure in which a first layer and a second layer having different refractive indices are alternately arranged, and the first layer is formed of SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , Any one of TiO ₂ , and the second layer may be formed of any one of materials other than the first layer. In this case, the reflective electrode layer may not be formed.

The insulating layer 133 is formed to a thickness of 100 ~ 10,0001, each layer may be formed of a thickness of 1 ~ 50,000Å or 100 ~ 10,000Å for each layer when formed in a multi-layer structure. Here, in the insulating layer 133 of the multilayer structure, the thickness of each layer may change the reflection efficiency according to the emission wavelength.

The material of the first connection electrode 141 and the second connection electrode 143 is Ag, Al, Au, Cr, Co, Cu, Fe, Hf, In, Mo, Ni, Si, Sn, Ta, Ti, W and their optional alloys. In addition, the first connection electrode 141 and the second connection electrode 143 may be formed of In, Sn, Ni, Cu, and alloys thereof for adhesion between the first electrode 135 and the second electrode 137. It may include a plating layer using, the thickness of the plating layer may be formed to 1 ~ 100,000 ~. The first connection electrode 141 and the second connection electrode 143 may be used as solder balls or metal bumps, but are not limited thereto.

The material of the first connection electrode 141 and the second connection electrode 143 is Ag, Al, Au, Cr, Co, Cu, Fe, Hf, In, Mo, Ni, Si, Sn, Ta, Ti, W and their optional alloys. In addition, the first connection electrode 141 and the second connection electrode 143 may be formed of In, Sn, Ni, Cu, and alloys thereof for adhesion between the first electrode 135 and the second electrode 137. It may include a plating layer using, the thickness of the plating layer may be formed to 1 ~ 100,000 ~. The first connection electrode 141 and the second connection electrode 143 may be used as a single metal such as solder balls or metal bumps, but are not limited thereto.

The support member 151 is used as a support layer for supporting the light emitting device 100. The support member 151 is formed of an insulating material, and the insulating material is formed of a resin layer such as silicon or epoxy. As another example, the insulating material may include a paste or an insulating ink. The insulating material is polyacrylate resin, epoxy resin, phenolic resin, polyamides resin, polyimides rein, unsaturated polyesters resin, polyphenylene ether resin (PPE), polyphenilene oxide resin (PPO), polyphenylenesulfides resin, cyanate ester resin, benzocyclobutene (BCB), Polyamido-amine Dendrimers (PAMAM), and Polypropylene-imine, Dendrimers (PPI), and resins including PAMAM-OS (organosilicon) with PAMAM internal structure and organic-silicon exterior, alone or in combination thereof. Can be. The support member 151 may be formed of a material different from that of the insulating layer 133.

At least one of compounds such as oxides, nitrides, fluorides, and sulfides having at least one of Al, Cr, Si, Ti, Zn, and Zr may be added to the support member 151. Here, the compound added in the support member 151 may be a heat spreader, and the heat spreader may be used as powder particles, granules, fillers, and additives of a predetermined size. It will be described as a diffusion agent. Here, the heat spreader may be an insulating material or a conductive material, the size of the heat spreader can be used in 1Å ~ 100,000Å, it may be formed in 1,000Å ~ 50,000Å for heat diffusion efficiency. Particle shape of the heat spreader may include a spherical or irregular shape, but is not limited thereto.

The heat spreader comprises a ceramic material, the ceramic material is a low temperature co-fired ceramic (LTCC), high temperature co-fired ceramic (HTCC), alumina (alumina) co-fired , Quartz, calcium zirconate, forsterite, SiC, graphite, fusedsilica, mullite, cordierite, zirconia, beryllia ), And at least one of aluminum nitride. The ceramic material may be formed of a metal nitride having higher thermal conductivity than nitride or oxide among insulating materials such as nitride or oxide, and the metal nitride may include, for example, a material having a thermal conductivity of 140 W / mK or more. The ceramic material may be, for example, SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , BN, Si ₃ N ₄ , SiC (SiC-BeO), BeO, It may be a ceramic series such as CeO, AlN. The thermally conductive material may comprise a component of C (diamond, CNT).

The support member 151 may be formed in a single layer or multiple layers, but is not limited thereto. Since the support member 151 includes a powder of ceramic material therein, the strength of the support member 151 may be improved, and thermal conductivity may also be improved.

The heat spreader included in the support member 151 may be added at a content ratio of about 1 to 99 wt /%, and may be added at a content ratio of 50 to 99 wt% for efficient heat diffusion. By adding a heat spreader to the support member 151, the thermal conductivity in the interior can be further improved. In addition, the coefficient of thermal expansion of the support member 151 is 4-11 [x10 ⁶ / ° C.], and the coefficient of thermal expansion has a coefficient of thermal expansion equal to or similar to that of the substrate 111, for example, a sapphire substrate. The bending of the wafer due to the difference in thermal expansion with respect to the light emitting structure 120 formed thereon or the generation of defects can be suppressed to prevent the reliability of the light emitting device from being lowered.

Here, an area of the lower surface of the support member 151 may be formed to be substantially the same area as the upper surface of the substrate 111. The lower surface area of the support member 151 may be formed to have the same area as the upper surface area of the first conductive semiconductor layer 115. In addition, a width of a lower surface of the support member 151 may be equal to a width of an upper surface of the substrate 111 and an upper surface of the first conductive semiconductor layer 115. The support member 151 may be formed and then separated into individual chips, such that side surfaces of the support member 151, the substrate 111, and the first conductive semiconductor layer 115 may be disposed on the same plane. .

Referring to FIG. 2, the length of the first side D1 of the support member 151 is substantially the same as the length of the first side of the substrate 111, and the length of the second side D2 is the substrate ( It may be formed substantially the same as the length of the second side of 111. In addition, the distance D5 between the first connection electrode 141 and the second connection electrode 143 is a distance between each electrode pad, and may be spaced at least 1/2 of the length of one side of the light emitting device.

The lower surface of the support member 151 may be formed as a substantially flat surface or an irregular surface, but is not limited thereto.

The thickness T1 of the first region of the support member 151 may be formed at least thicker than the thickness H2 of the second connection electrode 143. As another example, the thickness T1 of the first region of the support member 151 may be formed to be thinner than the thickness H2 of the second connection electrode 143, which is a thickness of the insulating layer 133. By forming a thickness thicker than the thickness of the second connection electrode 137, the thickness of the support member 151 may be reduced. The thickness T2 of the second region of the support member 151 may be thicker than the thickness of the first connection electrode 141. The thickness T1 of the support member 151 may be formed in a range of 1 μm to 100,000 μm, and may be formed in another range of 45 μm or more, for example, 45 to 115 μm. Here, when the thickness of the support member 151 has a range of 45 μm to 1000 μm, the thickness of the light emitting device may also be changed according to the thickness of the support member 151.

The lower surface of the support member 151 is formed lower than the lower surfaces of the first electrode 135 and the second electrode 137, and the lower surface of the first connection electrode 141, the second connection electrode 143. May be disposed on the same plane (ie, horizontal plane) as the lower surface of

The support member 151 contacts the circumferential surfaces of the first electrode 135, the second electrode 137, the first connection electrode 141, and the second connection electrode 143. Accordingly, heat conducted from the first electrode 135, the second electrode 137, the first connection electrode 141, and the second connection electrode 143 is diffused through the support member 151, and radiates heat. Can be. At this time, the thermal conductivity of the support member 151 is improved by the heat spreading agent therein, and heat radiation is performed through the entire surface. Therefore, the light emitting device 100 may improve reliability by heat.

In addition, the side surface of the support member 151 may be disposed on the same plane (that is, vertical surface) with the side surfaces of the light emitting structure 120 and the substrate 111.

The light emitting device 100 is mounted in a flip-type manner, and most of the light is emitted toward the upper surface of the substrate 111, and some light is emitted through the side surface of the substrate 111 and the side surface of the light emitting structure 120. Since it is emitted, it is possible to reduce the light loss by the first electrode 135 and the second electrode 137. Accordingly, light extraction efficiency and heat radiation efficiency of the light emitting device 100 may be improved.

3 to 10 are views illustrating a manufacturing process of a light emitting device according to an embodiment. The following fabrication process is shown as an individual device for ease of description, but may be fabricated at the wafer level, and the individual device may be described as being fabricated through the process described below. In addition, the present invention is not limited to the manufacturing process described below, and may be manufactured in an additional process or fewer processes in a specific process of each process.

Referring to FIG. 3, the substrate 111 may be loaded onto growth equipment, and a compound semiconductor of group 2 to 6 elements may be formed in a layer or pattern form thereon. The substrate 111 is used as a growth substrate.

Here, the substrate 111 may be made of a light transmissive substrate, an insulating substrate or a conductive substrate, for example, sapphire substrate (Al ₂ 0 ₃ ), GaN, SiC, ZnO, Si, GaP, InP, Ga ₂ 0 ₃ , and GaAs and the like. A light extraction structure such as an uneven pattern may be formed on the upper surface of the substrate 111. The uneven pattern may change the critical angle of the light to improve the light extraction efficiency.

The growth equipment may be an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), dual-type thermal evaporator, sputtering, metal organic chemical (MOCVD) vapor deposition) and the like, and the present invention is not limited thereto.

A first semiconductor layer 113 may be formed on the substrate 111, and the first semiconductor layer 113 may be formed using a compound semiconductor of a group 3 to 5 group element. The first semiconductor layer 113 may be formed as a buffer layer to reduce a difference in lattice constant from the substrate 111. The first semiconductor layer 113 may be formed of an undoped semiconductor layer, and the undoped semiconductor layer may be formed of a GaN-based semiconductor that is not intentionally doped.

The light emitting structure 120 may be formed on the first semiconductor layer 113. The light emitting structure 120 may be formed in the order of the first conductive semiconductor layer 115, the active layer 117, and the second conductive semiconductor layer 119.

The first conductive semiconductor layer 115 is a compound semiconductor of a group III-V group element doped with a first conductive dopant, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like can be selected. When the first conductive type is an N type semiconductor, the first conductive type dopant includes an N type dopant such as Si, Ge, Sn, Se, Te, or the like. The first conductive semiconductor layer 115 may be formed as a single layer or a multilayer, but is not limited thereto. The first conductive semiconductor layer 115 may further include a superlattice structure having different materials, but is not limited thereto.

An active layer 117 is formed on the first conductive semiconductor layer 115, and the active layer 117 may include at least one of a single quantum well structure, a multiple quantum well structure, a quantum line structure, and a quantum dot structure. . The active layer 117 is a Group III -5 compound of an element using a semiconductor material _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1 Cycle of the well layer and barrier layer having a composition formula), e.g. It is not limited thereto.

A conductive cladding layer may be formed on or under the active layer 117, and the conductive cladding layer may be formed of an AlGaN-based semiconductor. The barrier layer of the active layer 117 may be higher than the band gap of the well layer, and the conductive clad layer may be formed higher than the band gap of the barrier layer.

The second conductive semiconductor layer 119 is formed on the active layer 117, and the second conductive semiconductor layer 119 is a compound semiconductor of a group III-V group element doped with a second conductive dopant. GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like. When the second conductive type is a P type semiconductor, the second conductive type dopant includes a P type dopant such as Mg and Zn. The second conductive semiconductor layer 119 may be formed as a single layer or a multilayer, but is not limited thereto. The second conductive semiconductor layer 119 may further include a superlattice structure having different materials, but is not limited thereto.

The first conductive semiconductor layer 115, the active layer 117, and the second conductive semiconductor layer 119 may be defined as a light emitting structure 120. In addition, a third conductive semiconductor layer, eg, an N-type semiconductor layer, having a polarity opposite to that of the second conductive type may be formed on the second conductive semiconductor layer 119. Accordingly, the light emitting structure 120 may be formed of at least one of an NP junction, a PN junction, an NPN junction, and a PNP junction structure.

Referring to FIG. 4, etching is performed on a portion A1 of the light emitting structure 120. A portion of the light emitting structure 120 may be exposed to the first conductive semiconductor layer 115, and an exposed portion of the first conductive semiconductor layer 115 may be formed on the top surface of the active layer 117. It can be formed at a lower height.

The etching process masks the upper surface area of the light emitting structure 120 in a mask pattern, and then performs dry etching on the partial area A1 of the light emitting structure 120. The dry etching may include at least one of Inductively Coupled Plasma (ICP) equipment, Reactive Ion Etching (RIE) equipment, Capacitive Coupled Plasma (CCP) equipment, and Electron Cyclotron Resonance (ECR) equipment. Another etching method may further include, but is not limited to, wet etching.

Here, the partial region A1 of the light emitting structure 120 may be set to an arbitrary region as an etching region, and the number of the regions A1 may be one or plural.

Referring to FIG. 5, the reflective electrode layer 131 is formed on the light emitting structure 120. The reflective electrode layer 131 may be formed to have a smaller area than the upper surface area of the second conductive semiconductor layer 119, which may prevent a short caused by the manufacturing process of the reflective electrode layer 131. The reflective electrode layer 131 is masked on a region spaced a predetermined distance D3 from an upper surface edge of the second conductive semiconductor layer 119 and a partial region A1 of the light emitting structure 120 with a mask. It can be deposited by sputter equipment or / and deposition equipment.

The reflective electrode layer 131 may include a metal material having a reflectance of at least 70% or at least 90%.

The reflective electrode layer 131 may be formed of a structure of an ohmic contact layer / reflective layer / diffusion prevention layer / protective layer, a structure of a reflective layer / diffusion prevention layer / protective layer, or may be formed of a structure of an ohmic contact layer / reflective layer / protective layer It may be formed as a reflective layer. The material and thickness of each layer will be referred to the description of FIG. 1.

Here, the order of the process of FIG. 4 and the process of FIG. 5 may be changed, but is not limited thereto.

Referring to FIG. 6, a first electrode 135 is formed on the first conductive semiconductor layer 115, and a second electrode 137 is formed on the reflective electrode layer 131. The first electrode 135 and the second electrode 137 may be formed by sputtering and / or deposition equipment after masking a region other than the electrode formation region with a mask, but are not limited thereto. The first electrode 135 and the second electrode 137 are Cr, Ti, Co, Ni, V, Hf, Ag, Al, Ru, Rh, Pt, Pd, Ni, Mo, W, La, Ta, Ti And optionally alloys thereof. The first electrode 135 and the second electrode 137 may be formed in multiple layers, and may include, for example, at least two layers of an adhesive layer / reflection layer / diffusion layer / bonding layer using the above materials. The first electrode 135 and the second electrode 137 may be formed in the same stacked structure in the same process, but is not limited thereto.

The second electrode 137 may be in physical contact with the reflective electrode layer 131 and the second conductive semiconductor layer 119.

Referring to FIG. 7, an insulating layer 133 is formed on the reflective electrode layer 131. The insulating layer 133 may be formed by sputtering or deposition. The insulating layer 133 is formed on an area except for the first electrode 135 and the second electrode 137, and has an upper surface of the reflective electrode layer 131 and the second conductive semiconductor layer 119. The exposed region of the first conductive semiconductor layer 115 is covered.

The insulating layer 133 includes an insulating material or an insulating resin such as oxides, nitrides, fluorides, sulfides, and the like of Al, Cr, Si, Ti, Zn, and Zr. The insulating layer 133 may be selectively formed of, for example, SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , or TiO ₂ . The insulating layer 133 may be formed as a single layer or a multilayer, but is not limited thereto.

Here, the process of forming the electrodes 135 and 137 of FIG. 6 and the process of forming the insulating layer 133 of FIG. 7 may be changed.

Referring to FIG. 8, a first connection electrode 141 is bonded on the first electrode 135, and a second connection electrode 143 is bonded on the second electrode 137. The first connection electrode 141 includes a conductive pad such as solder balls and / or metal bumps, and is bonded onto the first electrode 135. The first connection electrode 141 may be disposed in a direction perpendicular to the top surface of the first conductive semiconductor layer 115. The second connection electrode 143 includes a conductive pad such as solder balls or / and metal bumps, and is bonded onto the second electrode 137. The second connection electrode 143 may be disposed in a direction perpendicular to the top surface of the second conductive semiconductor layer 119.

Here, the thickness H1 of the first connection electrode 141 may be formed at least longer than the thickness H2 of the second connection electrode 143, and the first connection electrode 141 and the second connection may be formed. Lower surfaces of the electrodes 143 are disposed on different planes, and upper surfaces thereof are disposed on the same plane (ie, horizontal plane).

9, the support member 151 is formed on the insulating layer 133 by squeegeeing and / or dispensing.

The support member 151 is formed of an insulating support layer by adding a heat spreader to a resin material such as silicone or epoxy.

The heat spreader may include at least one of an oxide, a nitride, a fluoride, and a sulfide having a material such as Al, Cr, Si, Ti, Zn, Zr, for example, a ceramic material. The heat spreader may be defined as powder particles, granules, fillers, and additives of a predetermined size.

The heat spreader includes a ceramic material, and the ceramic material includes a low temperature co-fired ceramic (LTCC) or a high temperature co-fired ceramic (HTCC). The ceramic material may be formed of a metal nitride having higher thermal conductivity than nitride or oxide among insulating materials such as nitride or oxide, and the metal nitride may include, for example, a material having a thermal conductivity of 140 W / mK or more. The ceramic material may be SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , BN, Si ₃ N ₄ , SiC (SiC-BeO), BeO, CeO, It may be a ceramic series such as AlN. The thermally conductive material may comprise a component of C (diamond, CNT). The heat spreader may be included in the support member 151 in the range of about 1 to 99 Wt /%, and may be added to 50% or more for heat diffusion efficiency.

The support member 151 may be formed by mixing a polymer material in an ink or paste, and the method of mixing the polymer material may be a ball mill, an oil ball mill, an impeller mixing, a bead mill, a basket mill. In this case, a solvent and a dispersant may be used for even dispersion, and the solvent is added for viscosity control, and 3 to 400 Cps for ink and 1000 to 1 million Cps for paste are preferable. In addition, the type is water, methanol (ethanol), ethanol (isool), isopropanol (isopropanol), butylcabitol (butylcabitol), MEK, toluene (xylene), diethylene glycol (DiethyleneGlycol; DEG) , Formamide (FA), α-terpineol (TP), γ-butyrolactone (BL), methylcellosolve (MCS), propylmethylcellulose solution (Propylmethylcellosolve; PM) may include a single or a plurality of combinations. In order to increase the interparticle bonding, 1-Trimethylsilylbut-1-yne-3-ol, Allytrimethylsilane, Trimethylsilyl methanesulfonate, Trimethylsilyl

tricholoracetate, Methyl trimethylsilylacetate, Trimethylsilyl propionic acid

Silane-based additives such as these may enter, but in this case, risk of gelation

The choice of addition should be carefully.

Here, in the manufacturing process, a connection electrode such as solder bumps may be manufactured and bonded in advance, and then a support member may be formed around the connection electrode. On the contrary, the insulating layer, such as ink or paste, may be printed or dispensed, cured, and then formed with a hole corresponding to the connection electrode, and then filled with a conductive material to form the connection electrode.

The support member 151 may have a thickness having the same height as the top surface of the first connection electrode 141 and the second connection electrode 143.

The support member 151 is filled around the first connection electrode 141, the second connection electrode 143, the first electrode 135, and the second electrode 137. An upper surface of the first connection electrode 141 and the second connection electrode 143 is exposed on an upper surface of the support member 151.

The support member 151 is an insulating support layer and supports the circumferences of the plurality of connection electrodes 141 and 143. That is, the plurality of connection electrodes 141 and 143 may be inserted into the support member 151.

The thickness T1 of the support member 151 may be formed such that the top surfaces of the first connection electrode 141 and the second connection electrode 143 are exposed.

The support member 151 is cured within a predetermined temperature, for example, 200 ° C. ± 100 ° C., and the curing temperature is in a range that does not affect the semiconductor layer.

Here, after the supporting member 151 is formed, a connection electrode hole is formed in the supporting member 151, and then the first and second connection electrodes 141 and 143 may be formed.

Referring to FIG. 10, the thickness of the substrate 111 may be formed to a thickness of 50 μm or less by polishing the top surface area of the surface of the substrate 111 of FIG. 9. The top surface S1 of the substrate 111 may be formed to have a thickness in the range of 30 μm to 50 μm through a polishing process. The substrate 111 may have a thickness thinner than the thickness of the support member 151, but is not limited thereto. This is further provided by a separate support member 151 on the opposite side of the substrate 111 in the light emitting device 100, the substrate 111 is used as a layer for emitting light, the thickness of the substrate 111 is further It can be processed thinly. In this case, a polishing process such as a chemical mechanical polishing (CMP) process may be performed on the surfaces of the support member 151, the first connection electrode 141, and the second connection electrode 143.

The top surface of the substrate 111 is etched to form a plurality of convex portions 111A. Each of the plurality of convex portions 111A may have a maximum width R1 of 1.5 to 2.6 μm, and its height R2 is formed of 1.0 to 1.5 μm, and the interval T4 between the convex portions 111A. Are spaced at equal intervals from each other and may be formed, for example, in the range of 3.5 ± 0.5 μm.

The thickness T3 of the substrate 111 may be formed to 30 ~ 50㎛, as shown in FIG. The thickness T3 of the substrate 111 is a thickness excluding the convex portion 111A. When the thickness T3 is thicker than 50 μm, light extraction efficiency gradually decreases. For example, when the substrate thickness is about 300 μm, there is a problem that the brightness of about 20% is lowered compared to 50 μm. According to the embodiment, the plurality of convex portions 111A are arranged on the top surface of the light transmissive substrate 111, and the thickness T3 of the substrate 111 is a threshold value considering light extraction efficiency and preventing warping of the wafer. It may be formed in a micrometer.

In addition, when the light-transmitting substrate 111 is removed, a laser lift-off (LLO) method is used, which damages the semiconductor layer, particularly the active layer 117. In addition, when the substrate 111 is removed, there is a problem that the luminous intensity is further reduced by about 40%.

11 is a view showing a light emitting module equipped with a light emitting device according to the embodiment.

Referring to FIG. 11, the light emitting device 100 is mounted on the module substrate 170 by a flip method.

In the module substrate 170, an insulating layer 172 is disposed on the metal layer 171, and a first electrode pad 173 and a second electrode pad 174 are formed on the insulating layer 172. The first electrode pad 173 and the second electrode pad 174 are supplied as a land pattern to supply power. A passivation layer 175 is formed on the insulating layer 172 except for the electrode pads 173 and 174, and the passivation layer 175 is a solder resist layer and includes a white or green passivation layer. do. The protective layer 175 reflects the light efficiently, thereby improving the amount of reflected light.

The module substrate 170 may be a printed circuit board (PCB) including a circuit pattern (not shown). However, the module substrate 170 may include a resin-based PCB, a metal core PCB (MCPCB, Metal Core PCB), a flexible PCB (FPCB, Flexible PCB) and the like, but is not limited thereto.

The first connection electrode 141 of the light emitting device 100 corresponds to the first electrode pad 173, and the second connection electrode 143 of the light emitting device 100 corresponds to the second electrode pad 174. This corresponds. The first electrode pad 173 and the first connection electrode 141 are bonded by the bonding material 177, and the second electrode pad 174 and the second connection electrode 143 are bonded by the bonding material 177. Is bonded by

The light emitting device 100 is operated by power supplied from the first electrode pad 173 and the second electrode pad 174, and the generated heat is generated by the first connection electrode 141 and the second connection electrode ( After conducting through 143, heat may radiate through the entire surface of the support member 151. The bottom surface of the support member 151 may be spaced apart from the top surface of the module substrate 170, and the spaced distance may be spaced apart from the thickness of the bonding material 173.

Spaces between the bottom surface of the first connection electrode 141, the second connection electrode 143, and the support member 151 of the light emitting device 100 and the top surface of the module substrate 170 may be formed at the same interval. have.

Although the configuration in which one light emitting device 100 is mounted on the module substrate 170 is disclosed, a plurality of light emitting devices may be arrayed, but the embodiment is not limited thereto.

12 is a side cross-sectional view showing another example of a light emitting device according to the embodiment.

Referring to FIG. 12, the light emitting device includes a phosphor layer 161 formed on the top surface S1 of the substrate 111 opposite to the support member 151, that is, the light exit surface. The phosphor layer 161 may be a fluorescent film or a coated layer, and may be formed as a single layer or multiple layers.

Phosphor is added to the phosphor layer 161 in the light transmitting resin layer. The light transmissive resin layer may include a material such as silicon or epoxy, and the phosphor may be selectively formed among YAG, TAG, Silicate, Nitride, and Oxy-nitride-based materials. The phosphor includes at least one of a red phosphor, a yellow phosphor, and a green phosphor, and excites a part of the light emitted from the active layer 115 to emit light at a different wavelength.

The phosphor layer 161 is formed on the top surface S1 of the substrate 111, the substrate 111, and the side surface S2 of the light emitting structure 120. The phosphor layer 161 may have a thickness of 1 to 100,000 μm, and as another example, a thickness of 1 to 10,000 μm.

The phosphor layer 161 may include different phosphor layers, and the different phosphor layers may include one phosphor layer of a red, yellow, or green phosphor layer, and a second layer formed on the first layer. And a phosphor layer different from the first layer. The phosphor layer 161 may be disposed with different phosphor layers in the first and second regions that do not overlap. A protective layer made of a transparent resin material for protection may be further formed on the side of the phosphor layer 161 and the light emitting structure, but is not limited thereto.

13 is a view showing a light emitting device package mounted with a light emitting device according to the embodiment.

Referring to FIG. 13, the light emitting device package 200 may include a body portion 211, a first lead electrode 215 and a second lead electrode 217 installed on the body portion 211, and a molding member 217. , And the light emitting device 100.

The body portion 211 may be injection molded selectively from a high reflection resin series (eg, PPA), a polymer series, or a plastic series, or may be formed in a single layer or multilayer substrate stack structure. The body portion 211 includes a cavity 212 having an open top, and a circumferential surface of the cavity 212 may be inclined or formed perpendicular to the cavity bottom surface.

The first lead electrode 215 and the second lead electrode 217 are disposed in the cavity 212, and the first lead electrode 215 and the second lead electrode 217 are spaced apart from each other.

The light emitting device 100 is bonded to the first lead electrode 215 and the second lead electrode 217 by a flip method. That is, the first connection electrode 141 of the light emitting device 100 is bonded to the first lead electrode 215, and the second connection electrode 143 is bonded to the second lead electrode 217.

Upper surfaces of the first lead electrode 215 and the second lead electrode 217 and a lower surface of the light emitting device 100, that is, the first connection electrode 141, the second connection electrode 143, and the support member. Spaces between the lower surfaces of the 151 may be formed at the same interval.

The support member 151 of the light emitting device 100 is spaced apart on the first lead electrode 215 and the second lead electrode 217 and radiates heat through the entire surface.

A molding member 217 is formed in the cavity 212, and the molding member 217 may be formed of a light transmissive resin material such as silicon or epoxy, and may include a phosphor.

The light generated inside the light emitting device 100 may be extracted most of the light through the top and side surfaces of the light emitting device 100, and the extracted light may be emitted to the outside through the molding member 217. .

The light emitting device package 200 may be mounted as one or a plurality of light emitting devices of the above-described embodiments, but is not limited thereto. When the light emitting device package includes a light emitting device according to another embodiment having a phosphor layer, a separate phosphor may not be added to the molding member 217, and phosphors emitting different colors or similar colors may be added. Can be.

The light emitting device or the light emitting device package according to the embodiment may be applied to the light unit. The light unit includes a structure in which a plurality of light emitting devices or light emitting device packages are arranged. The display device shown in FIGS. 14 and 15 and the lighting device shown in FIG. 16 may be included, and a lighting lamp, a traffic light, a vehicle headlamp, an electronic signboard, and the like may be included.

14 is an exploded perspective view of a display device according to an exemplary embodiment.

Referring to FIG. 14, the display device 1000 according to the embodiment includes a light guide plate 1041, a light emitting module 1031 that provides light to the light guide plate 1041, and a reflective member 1022 under the light guide plate 1041. ), An optical sheet 1051 on the light guide plate 1041, a display panel 1061, a light guide plate 1041, a light emitting module 1031, and a reflective member 1022 on the optical sheet 1051. The bottom cover 1011 may be included, but is not limited thereto.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 diffuses light to serve as a surface light source. The light guide plate 1041 is made of a transparent material, for example, acrylic resin-based such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN). It may include one of the resins.

The light emitting module 1031 provides light to at least one side of the light guide plate 1041, and ultimately serves as a light source of the display device.

The light emitting module 1031 may include at least one, and may provide light directly or indirectly at one side of the light guide plate 1041. The light emitting module 1031 may include a module substrate 1033 and a light emitting device 100 according to the exemplary embodiment disclosed above, and the light emitting device 100 may be arranged on the module substrate 1033 at predetermined intervals. have. As another example, the light emitting device package 20 as illustrated in FIG. 20 may be arranged on the module substrate 1033.

The module substrate 1033 may be a printed circuit board (PCB) including a circuit pattern (not shown). However, the module substrate 1033 may include not only a general PCB but also a metal core PCB (MCPCB, Metal Core PCB), a flexible PCB (FPCB, Flexible PCB) and the like, but is not limited thereto. When the light emitting device 100 is mounted on the side surface of the bottom cover 1011 or the heat dissipation plate, the module substrate 1033 may be removed. Here, a part of the heat dissipation plate may contact the upper surface of the bottom cover 1011.

In addition, the plurality of light emitting devices 100 may be mounted on the module substrate 1033 such that an emission surface from which light is emitted is spaced apart from the light guide plate 1041 by a predetermined distance, but is not limited thereto. The light emitting device 100 may directly or indirectly provide light to a light incident portion that is at least one side of the light guide plate 1041, but is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflective member 1022 may improve the luminance of the light unit 1050 by reflecting light incident to the lower surface of the light guide plate 1041 and pointing upward. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be combined with the top cover, but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, and includes a first and second substrates of transparent materials facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 displays information by light passing through the optical sheet 1051. The display device 1000 may be applied to various portable terminals, monitors of notebook computers, monitors of laptop computers, televisions, and the like.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light transmissive sheet. The optical sheet 1051 may include at least one of a sheet such as, for example, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The diffusion sheet diffuses the incident light, the horizontal and / or vertical prism sheet focuses the incident light into the display area, and the brightness enhancement sheet reuses the lost light to improve the brightness. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

Here, the light guide plate 1041 and the optical sheet 1051 may be included as an optical member on the optical path of the light emitting module 1031, but are not limited thereto.

15 is a diagram illustrating a display device according to an exemplary embodiment.

Referring to FIG. 15, the display device 1100 includes a bottom cover 1152, a module substrate 1120 on which the light emitting device 100 disclosed above is arranged, an optical member 1154, and a display panel 1155. .

The module substrate 1120 and the light emitting device 100 may be defined as a light emitting module 1060. The bottom cover 1152, at least one light emitting module 1060, and the optical member 1154 may be defined as a light unit. The light emitting device according to the embodiment may be arrayed on the module substrate 1120, or the light emitting device package shown in FIG. 13 may be arrayed. The bottom cover 1152 may include an accommodating part 1153, but is not limited thereto.

Here, the optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, horizontal and vertical prism sheets, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a poly methy methacrylate (PMMA) material, and the light guide plate may be removed. The diffusion sheet diffuses the incident light, the horizontal and vertical prism sheets focus the incident light onto the display area, and the brightness enhancement sheet reuses the lost light to improve the brightness.

16 is a perspective view of a lighting apparatus according to an embodiment.

Referring to FIG. 16, the lighting device 1500 may include a case 1510, a light emitting module 1530 installed in the case 1510, and a connection terminal installed in the case 1510 and receiving power from an external power source. 1520).

The case 1510 may be formed of a material having good heat dissipation, for example, may be formed of a metal material or a resin material.

The light emitting module 1530 may include a module substrate 1532 and a light emitting device 100 according to an embodiment mounted on the module substrate 1532. The plurality of light emitting devices 100 may be arranged in a matrix form or spaced apart at predetermined intervals. The light emitting device may be flip-mounted on the module substrate 1532, or a package as illustrated in FIG. 20 may be arrayed.

The module substrate 1532 may be a circuit pattern printed on an insulator. For example, a printed circuit board (PCB), a metal core PCB, a flexible PCB, and a ceramic PCB may be used. And the like.

In addition, the module substrate 1532 may be formed of a material that reflects light efficiently, or a surface may be coated with a color, for example, white, silver, etc., in which the light is efficiently reflected.

At least one light emitting device package 200 may be mounted on the module substrate 1532. Each of the light emitting device packages 200 may include at least one light emitting diode (LED) chip. The LED chip may include a colored light emitting diode emitting red, green, blue or white colored light, and a UV emitting diode emitting ultraviolet (UV) light.

The light emitting module 1530 may be arranged to have a combination of various light emitting device packages 200 to obtain color and luminance. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be combined to secure high color rendering (CRI).

The connection terminal 1520 may be electrically connected to the light emitting module 1530 to supply power. The connection terminal 1520 is inserted into and coupled to an external power source in a socket manner, but is not limited thereto. For example, the connection terminal 1520 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by a wire.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in each embodiment may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

Although the above description has been made with reference to the embodiments, these are only examples and are not intended to limit the present invention, and those of ordinary skill in the art to which the present invention pertains should not be exemplified above without departing from the essential characteristics of the present embodiments. It will be appreciated that many variations and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

DESCRIPTION OF SYMBOLS 100 Light emitting element, 111 board | substrate, 111A: convex part, 113: buffer layer, 115: 1st conductive type semiconductor layer, 117: active layer, 119: 2nd conductive type semiconductor layer, 120: light emitting structure, 130,131: reflective electrode layer, 133: insulating layer, 135, 136: first electrode, 137, 138: second electrode, 141: first connection electrode, 143: second connection electrode, 151: support member, 170: module substrate, 200: light emitting device package

Claims (14)

A translucent substrate having a plurality of convex portions on the first surface;
A first conductive semiconductor layer on a second side opposite to the first surface of the substrate; The second conductive semiconductor layer; A semiconductor structure including an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer;
A first electrode under the first conductive semiconductor layer;
A reflective electrode layer disposed under the second conductive semiconductor layer;
A second electrode under the reflective electrode layer;
A support member disposed below the first conductive semiconductor layer and the reflective electrode layer and disposed around the first and second electrodes;
A first connection electrode disposed at least partially within the support member and formed under the first electrode; And
At least a part of the support member and a second connection electrode formed under the second electrode,
And the substrate has a thickness thinner than the thickness of the support member. The light emitting device of claim 1, wherein the substrate has a thickness of 50 μm or less. The light emitting device of claim 1, wherein the substrate has a thickness in a range of 30 to 50 μm. The light emitting device of claim 1, wherein a thickness of the substrate is 600 to 800% thicker than a thickness of the semiconductor structure. The light emitting device of claim 1, wherein the convex portion has a hemispherical shape. The light emitting device according to any one of claims 1 to 5, wherein a width of the convex portion is wider than a height of the convex portion. The light emitting device of claim 6, wherein each convex portion has a width of 1.5 μm to 2.6 μm, and each convex portion has a height of 1.0 μm to 1.5 μm. 8. The light emitting device of claim 7, wherein an interval between the convex portions is 3 to 4 µm. The light emitting device of claim 1, wherein the support member comprises an insulating resin layer disposed around the first electrode, the second electrode, the first connection electrode, and the second connection electrode. The light emitting device of claim 1, further comprising an insulating layer in a region between the support member, the reflective electrode layer, and the light emitting structure. The method of claim 1,
The support member has a flat lower surface, and has a thickness thicker than the thickness of the first connection electrode and the second connection electrode. The method of claim 1,
And a width of a lower surface of the support member is equal to a width of at least one of a first surface of the substrate and an upper surface of the first conductive semiconductor layer. The method according to claim 1 or 11,
A light emitting device comprising a phosphor layer on the first surface of the substrate. The light emitting device of any one of claims 1 to 3; And
A module substrate including a first electrode pad and a second electrode pad,
The light emitting device is arrayed on the module substrate,
And a first connection electrode of the light emitting device is connected to the first electrode pad of the module substrate, and a second connection electrode of the light emitting device is connected to the second electrode pad.

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