KR20120076065A - Touch type organic electro luminescent device - Google Patents

Abstract

PURPOSE: A touch type organic electro-luminescence device is provided to prevent the damage of a pad electrode and reflection of laser beam by spreading a frit pattern on a non-display domain between a first substrate having an array element and a second substrate having a touch sensor. CONSTITUTION: A second substrate is opposite to a first substrate(110). An organic electro-luminescence diode is formed on the first substrate. A touch sensor is formed at the outer surface of the second substrate. A plurality of pad electrodes(188) is connected with a touch sensor of a non-display domain of the second substrate. The touch pad electrode comprises a pad electrode(172) and an auxiliary pad electrode(190). A frit pattern(197) is formed as a form crossing with the touch pad electrode.

Description

Touch type organic electroluminescent device

The present invention relates to an organic electroluminescent device, and more particularly to a touch type organic electroluminescent device capable of minimizing damage due to laser welding in a frit encapsulator structure.

Organic light emitting diodes, which are one of flat panel displays (FPDs), have high luminance and low operating voltage characteristics. In addition, the self-luminous self-illuminating type provides high contrast ratio, enables ultra-thin display, easy response time with several microsecond response time, no restriction on viewing angle, and stable at low temperatures. Since it is driven at a low voltage of 5 to 15V DC, it is easy to manufacture and design a driving circuit.

Such organic light emitting devices are used in various applications such as TVs, mobile phones, PDAs, and the like.

On the other hand, recently, a product having a function to operate by touching a screen with a built-in touch sensor in a mobile phone, PDA or laptop, which is personally portable, has been attracting much attention of users.

Along with this trend, various attempts have recently been made to have a touch function in organic light emitting devices that are used as display devices in various applications.

For example, in the organic light emitting device of the top emission type, a touch function is provided by attaching a touch sensor built-in panel in which an on-cell type separate touch sensor is embedded, that is, a touch screen.

The touch screen is used as an output means for displaying an image, and at the same time, it is used as an input means for receiving a user's command by touching a specific portion of the displayed image. It may be classified into an ultrasonic method and the like.

That is, when the user touches the touch screen while viewing the image displayed on the display area of the organic light emitting diode, the touch screen detects the position information of the corresponding region and compares the detected position information with the position information of the image to instruct the user's command. I can recognize it.

However, when the on-cell type touch panel embedded in the touch sensor is attached to the surface of the organic light emitting diode, the thickness increases and becomes heavier, resulting in a trend against the trend of lighter and thinner display devices.

Therefore, recently, a lightweight thin touch type organic light emitting diode has been implemented by using a second substrate for encapsulation facing the first substrate having an organic light emitting diode and an array element as a touch screen.

In the conventional touch type organic light emitting device, a first substrate including an array element and an organic light emitting diode and a second substrate including a touch sensor are disposed to face each other.

In the first substrate, a display area and a non-display area are defined outside the display area, and the display area includes a plurality of pixel areas defined as areas captured by gate wirings and data wirings. Power supply wiring is provided in parallel with the data wiring. Each of the pixel regions includes a switching and driving thin film transistor, and is connected to the driving thin film transistor and has a first electrode formed thereon.

In addition, an organic light emitting layer including a light emitting material pattern emitting red, green, and blue colors is formed on the first electrode, and a second electrode is formed on the entire surface of the organic light emitting layer. It is.

In addition, a second substrate faces the encapsulation to correspond to the first substrate provided with the above-described components, and the display region is located outside the display regions of the first and second substrates. A frit pattern is provided to keep the panel state by joining the two substrates together.

However, in the conventional touch type organic light emitting diode having the above-described configuration, in the step of bonding the second substrate including the touch sensor and the first substrate including the array element and the organic light emitting diode through the frit pattern, A large amount of defects are occurring.

The failure occurring in the bonding step will be described further.

As shown in FIG. 1 (sectional view of welding a frit pattern by laser beam irradiation in a conventional touch type organic light emitting device manufacturing step), a frit is formed on the first substrate 10. After forming the frit pattern 97 by applying a syringe or the like to a non-display area between the second substrates 70 in a line form, the first and second substrates 10 and 70 are bonded to each other. The touch type organic EL device 1 is completed by performing laser welding on the frit pattern 97 by irradiating a laser beam on the second substrate 70 to cure the frit pattern 97.

However, as shown in FIG. 2 (a plan view of a pad part overlapping with the frit pattern in the second substrate having the touch sensor), the upper portion of the second substrate 70 is formed on the portion where the prepattern 97 is formed. A plurality of pad electrodes 72 made of an opaque low resistance metal material and a conductive material connected to the first and second sensing electrodes (not shown) and the like are provided at regular intervals.

The plurality of pad electrodes 72 having such a structure are disconnected by heating when the laser beam is irradiated, and the laser beam reaches the frit pattern 97 provided on the first substrate (10 in FIG. 1). There is a problem that welding to the frit pattern 97 is not performed by hindering and smoothing the same.

The present invention has been made to solve the above problems, an object of the present invention to provide a touch type organic light emitting device that can be welded to the frit pattern smoothly by the laser beam irradiation.

In the touch type organic light emitting device according to the exemplary embodiment of the present invention, a display area including a plurality of pixel areas and a non-display area are defined outside thereof, and switching and driving thin film transistors are formed in each pixel area. A first substrate having an organic light emitting diode including a first electrode connected to the drain electrode of the driving thin film transistor, an organic light emitting layer, and a second electrode formed over the display area; A second substrate facing the first substrate; A touch sensor formed on an outer surface of the second substrate; A plurality of touch pad electrodes formed on the non-display area of the second substrate and connected to the touch sensor; And a frit pattern formed in a non-display area between the first substrate and the second substrate so as to surround the display area and cross the touch pad electrode, wherein each of the plurality of touch pad electrodes is made of a low resistance metal material. A second pad electrode is formed of a transparent conductive material in contact with the first pad electrode through an insulating layer exposing a first pad electrode and the first pad electrode. The first pad electrode overlaps the frit pattern. The pad electrode is removed so that only the second pad electrode is provided.

In this case, the touch sensor may include a plurality of first sensing electrodes connected to each other by a first connection pattern or a first sensing wiring on the second substrate, the insulating layer formed on the first sensing electrode, and The plurality of second sensing electrodes overlapping the first sensing electrode on the insulating layer and connected by a second connecting pann or a second sensing wiring in the second direction is characterized in that the plurality of second sensing electrodes are connected to each other.

In addition, the low resistance metal material is any one of aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, molybdenum (Mo), molybdenum (MoTi), the transparent conductive material is indium-tin Preferred is -oxide (ITO) or indium-zinc-oxide (IZO).

The insulating layer may have a plurality of openings corresponding to the first pad electrode to expose the first pad electrode, or a first pad contact hole to expose the first pad electrode.

In addition, a protective layer having a pad contact hole exposing the second pad electrode may be provided on the touch sensor.

In addition, a gate line and a data line intersecting with each other are provided at the boundary of each pixel region of the first substrate, and power lines are provided in parallel with the gate line or data line.

The touch type organic light emitting device according to the present invention includes a pad electrode made of a transparent conductive material only at a portion of the second substrate on which the touch sensor is provided and overlaps the frit pattern, and the first substrate having the array element. The frit pattern is applied to the non-display area between the second substrates provided with the touch sensor and the laser beam is irradiated to prevent the laser beam from being reflected or damaging the pad electrode during welding of the frit.

Furthermore, damage to the pad electrode is prevented during laser welding, thereby improving the yield.

1 is a cross-sectional view of the step of performing the welding of the frit pattern by the laser beam irradiation step of manufacturing a conventional touch type organic light emitting device.
FIG. 2 is a plan view of a pad part overlapping with a frit pattern in a second substrate having a touch sensor; FIG.
3 is a cross-sectional view of a part of a display area of a touch recognition organic light emitting diode according to an exemplary embodiment of the present invention.
Figure 4 is a plan view of a portion of the pad portion of the second substrate with a touch sensor in the touch recognition organic light emitting device according to an embodiment of the present invention.
FIG. 5 is a cross-sectional view of a portion cut along the cutting line VV in FIG. 4. FIG.
6 is a cross-sectional view of a pad portion of a second substrate of a touch type organic light emitting diode according to a modification of the embodiment of the present invention;

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

3 is a cross-sectional view of a part of a display area of a touch recognition organic light emitting diode according to an embodiment of the present invention, and FIG. 4 is a touch sensor provided in the touch recognition organic light emitting diode according to an embodiment of the present invention. 5 is a cross-sectional view of a portion of the pad portion of the second substrate, and FIG. 5 is a cross-sectional view of the portion cut along the cutting line VV. FIG. A switching region (not shown) and a region where a driving thin film transistor is to be formed are defined as a driving region DA.

As illustrated, the touch type organic light emitting diode 101 according to the embodiment of the present invention may include a first substrate 110 on which a driving and switching thin film transistor DTr (not shown) and an organic light emitting diode E are formed. And a second substrate 170 having a touch sensor TS.

First, the configuration of the first substrate 110 including the driving and switching thin film transistor DTr (not shown) will be described.

The first substrate 110 is formed of pure polysilicon corresponding to a switching and driving region DA (not shown) in each pixel region P, and a central portion of the first substrate 110 forms a channel. The semiconductor layer 113 including the second region 113b doped with a high concentration of impurities is formed on both sides of the first region 113a.

Although not shown in the drawings, a buffer layer (not shown) made of an inorganic insulating material, for example, silicon oxide (SiO ₂ ) or silicon nitride (SiNx), is formed on the entire surface of the first substrate 110 under the semiconductor 113 layer. It may be formed on the front surface.

The buffer layer (not shown) may prevent deterioration of characteristics of the semiconductor layer 113 due to the release of alkali ions emitted from the inside of the first substrate 110 itself when the semiconductor layer 113 formed thereon is crystallized. This is for the sake of brevity, and may be omitted when the semiconductor layer does not undergo a crystallization process.

In addition, a gate insulating layer 116 is formed on the entire surface of the semiconductor layer 113, and the gate electrode 116 is formed on the gate insulating layer 116 to correspond to the first region 113a of the semiconductor layer 113. 120 is formed.

The gate insulating layer 116 is connected to a gate electrode (not shown) to form a switching thin film transistor (not shown), extends in one direction, and a gate wiring (not shown) is formed.

In addition, an interlayer insulating layer 123 is formed over the gate electrode 120 and the gate wiring (not shown). In this case, a semiconductor layer contact hole 125 exposing each of the second regions 113b located on both sides of the first region 113a is formed in the interlayer insulating layer 123 and the gate insulating layer 116 below. .

On the other hand, an upper portion of the interlayer insulating layer 123 including the semiconductor layer contact hole 125 may include a data line (not shown) that defines each pixel region P while crossing the gate line (not shown), and the data line. Power wirings (not shown) are formed to be spaced apart from (not shown). In this case, the power line (not shown) may be formed on the gate insulating layer 116 spaced apart from the gate line (not shown).

Source and drain electrodes that are spaced apart from each other in the driving area DA and the switching area (not shown) on the interlayer insulating layer 123 and contact the second area 113b exposed through the semiconductor layer contact hole 125, respectively. 133 and 136 are formed. In this case, the semiconductor layer 113 including the source and drain electrodes 133 and 136, the second region 113b contacting the two electrodes 133 and 136, respectively, and an upper portion of the semiconductor layer 113. The formed gate insulating layer 116 and the gate electrode 120 form a driving thin film transistor DTr and a switching thin film transistor (not shown), respectively. In this case, the switching thin film transistor (not shown) is electrically connected to the driving thin film transistor DTr, the gate line (not shown), and the data line (not shown). The power line (not shown) is connected to the driving thin film transistor DTr.

Meanwhile, the driving and switching thin film transistor DTr (not shown) may form a p-type or n-type thin film transistor according to impurities doped in the second region 113b. In the case of the p-type thin film transistor, the second region 113b is formed by doping element 3, for example, boron (B), and holes are used as carriers.

Therefore, the first electrode 147 connected to the drain electrode 136 of the driving thin film transistor DTr serves as an anode or a cathode according to the type of the driving thin film transistor DTr. In the exemplary embodiment of the present invention, the first electrode 147 connected to the drain electrode 136 of the driving thin film transistor DTr serves as an anode electrode.

Meanwhile, in the touch recognition organic light emitting device 101 according to the embodiment of the present invention, the driving thin film transistor DTr and the switching thin film transistor (not shown) have a semiconductor layer 113 of polysilicon and have a top gate type. The driving and switching thin film transistor DTr (not shown) may be configured as a bottom gate type having a semiconductor layer of amorphous silicon.

When the driving and switching thin film transistor is configured as a bottom gate type, the stacked structure is spaced apart from the active layer of the gate electrode / gate insulating film / pure amorphous silicon and spaced apart from the semiconductor layer made of an ohmic contact layer of impurity amorphous silicon. It is made of a source and a drain electrode. In this case, the gate line is formed to be connected to the gate electrode of the switching thin film transistor on the layer where the gate electrode is formed, and the data line is formed to be connected to the source electrode on the layer where the source electrode of the switching thin film transistor is formed.

Meanwhile, a passivation layer 140 having a flat surface is formed on the driving and switching thin film transistor DTr (not shown).

In this case, the protective layer 140 is provided with a drain contact hole 143 exposing the drain electrode 136 of the switching and driving thin film transistor (DTr), respectively, although not shown in the figure, the protective layer The gate contact hole (not shown) exposing the gate electrode 120 of the driving thin film transistor DTr is provided at the 140 and the interlayer insulating layer 123.

Next, the drain electrode 136 and the drain contact hole 143 of the driving thin film transistor DTr are disposed on the passivation layer 140 provided with the drain contact hole 143 and the gate contact hole (not shown). In contact with each other, a first electrode 147 is formed for each pixel region P. FIG.

In this case, the first electrode 147 is made of a transparent conductive material having a large work function value such as indium tin oxide (ITO) or indium zinc oxide (IZO) to serve as an anode electrode. In order to maximize the light efficiency of the light emitted from the organic light emitting layer 155, the lower portion of the first electrode 147 is a metal material having excellent reflection efficiency, for example, aluminum (Al), aluminum alloy (AlNd), silver (Ag) A reflection plate 146 made of any one material is provided.

In the drawing, the reflector plate 146 is formed to have the same area and the same shape in plan view as the first electrode 147.

Although not shown in the drawings, the drain contact exposing the drain electrode (not shown) of the switching thin film transistor (not shown) and the gate electrode 120 of the driving thin film transistor DTr are respectively disposed on the passivation layer 140. A drain gate connection pattern simultaneously contacting the drain electrode 136 of the switching thin film transistor (not shown) and the gate electrode 120 of the driving thin film transistor DTr through the hole 143 and the gate contact hole (not shown). (Not shown) is being formed.

Next, a bank 150 is formed on the boundary of each pixel region P above the first electrode 147 to overlap the edge of the first electrode 147 in a form surrounding the pixel region P. . In this case, the bank 150 is made of one of an organic insulating material, for example, polyimide, photo acryl, and benzocyclobutene (BCB).

An organic light emitting layer 155 is formed on the first electrode 147 in each pixel area P surrounded by the bank 150, and the organic light emitting layer 155 emits white light. The second electrode 158 is formed over the entire display area for displaying an image.

In this case, the second electrode 158 is a metal material having a relatively low work function to act as a cathode electrode, such as aluminum (Al), aluminum alloy (AlNd), silver (Ag), magnesium (Mg), and gold (Au). , Aluminum-magnesium alloy (AlMg), magnesium-silver alloy (MgAg) is made of any one material.

The first electrode 147, the organic emission layer 155, and the second electrode 158 that are sequentially stacked in each pixel region P form an organic light emitting diode E.

Although not shown in the figure, a multilayer structure is formed between the first electrode 147 and the organic light emitting layer 155 and between the organic light emitting layer 155 and the second electrode 158 to improve the luminous efficiency of the organic light emitting layer 155, respectively. The first light emitting compensation layer (not shown) and the second light emitting compensation layer (not shown) may be further formed.

In this case, the multilayer first emission compensation layer (not shown) is sequentially stacked from the first electrode 147 and includes a hole injection layer and a hole transporting layer, and the second emission The compensation layer (not shown) includes an electron transporting layer and an electron injection layer from the organic light emitting layer 155. The first emission compensation layer (not shown) and the second emission compensation layer (not shown) of the multi-layer structure may be formed in the form of a plate on the front of the display area, or may be formed separately for each pixel area (P). have.

On the other hand, corresponding to the first substrate 110 having the above-described configuration plays a role of encapsulation to prevent the penetration of oxygen and moisture into the organic light emitting diode, the touch sensor for implementing a touch screen on the outer surface ( A second substrate 170 with TS) is provided.

More specifically, the components provided in the second substrate 170 will be described in detail.

The outer surface of the second substrate 170 is formed of a transparent conductive material, for example, indium tin oxide (ITO) or indium zinc oxide (IZO), corresponding to the display area, and has a rectangular, hexagonal, or rhombus shape. A plurality of first sensing electrodes 171 having a is provided. At this time, the first sensing electrode 171 is formed to be electrically connected between the patterns formed in the same row by a first connection pattern (not shown), or is configured to be connected by a first sensing wiring (not shown). Is characteristic.

An insulating layer 175 is disposed over the entire display area on the first sensing electrode 171.

In addition, an upper portion of the insulating layer 175 overlaps the first sensing electrode 171 with a transparent conductive material, and has a shape such as a square, hexagon, rhombus, and the like, and is spaced apart from each other. 180 is being formed.

In this case, the second sensing electrode 180 is configured to be electrically connected between the patterns formed in the same column by a second connection pattern (not shown) or by a second sensing wiring (not shown). .

The second protective layer 183 is formed to cover the second sensing electrode 180.

The first substrate and the second substrate 170 having the above-described configuration are adhered by the frit pattern 197 formed along the non-display area of the first substrate 110 and the second substrate 170 to form a panel state. As a result, the touch recognition organic light emitting diode 101 according to the embodiment of the present invention is achieved.

In this case, although not shown in the drawing, the non-display area outside the display area displaying the image of the second substrate 110 is connected to the first sensing electrode 171 and the second sensing electrode 180 and has a low resistance metal. A pad electrode 172 made of a material and a plurality of touch pad electrodes 188 made of an auxiliary pad electrode 190 made of a transparent conductive material are provided, and the flexible circuit corresponds to each of the touch pad electrodes 188. An external driving circuit board (not shown) having an X-direction sensing circuit (not shown) and a Y-direction sensing circuit (not shown) is mounted through a substrate (not shown).

The organic light emitting device 101 according to the exemplary embodiment of the present invention having the above-described configuration has a top light emitting method, and when an appropriate voltage is applied to the first and second sensing electrodes 171 and 180, they overlap each other. A capacitance having a constant magnitude is generated between the two electrodes 171 and 180 over the entire display area.

In this state, when the user looks at the outer surface of the second substrate 170 and the user touches the outer surface of the second substrate 170 using a finger or the like, the first contact portion overlaps each other at the portion where the finger is in contact. And a capacitance change of the capacitor generated between the second sensing electrodes 171 and 180, and the position of the touch-produced portion is automatically recognized by the X and Y direction sensing circuits (not shown) connected thereto. The touch recognition organic light emitting diode 101 performs an operation corresponding to a portion where a touch is generated.

In the touch type organic light emitting device 101 according to the embodiment of the present invention having the above configuration, the pad part PA on the second substrate 170 having the touch pad electrode 188 having the most characteristic configuration is formed. Explain about.

4 and 5, in the non-display area of the second substrate 170 having the touch sensor, the pad part PA includes a low resistance metal material such as aluminum (Al), aluminum alloy (AlNd), and copper. A pad electrode 172 made of any one of Cu, copper alloy, molybdenum (Mo), and molybdenum (MoTi) is provided to be spaced apart at a predetermined interval, and overlaps the pad electrode 172 and is a transparent conductive material. An auxiliary pad electrode 190 is provided. In this case, each of the pad electrodes 172 is connected to a first sensing electrode (171 in FIG. 3) or a second sensing electrode (180 in FIG. 3) formed in the same row or column provided in the display area through the link wiring 173. have.

At this time, the frit pattern 197 is positioned on the inner side of the second substrate to adhere the first substrate (110 of FIG. 3) and the second substrate 170 to the pad part PA. In the region where the pattern 197 is formed (hereinafter referred to as frit region FA), the pad electrode 172 made of the low-resistance metal material is removed to form only the auxiliary pad electrode 190 made of a transparent conductive material. Is characteristic.

As described above, in the second substrate 170, the pad electrode 172 made of the low resistance metal material is removed from the frit region FA in order to cure the frit pattern 197. The laser beam is irradiated from the upper portion of the second substrate 170 in correspondence with the frit area FA.

In this case, when the pad electrode 172 made of a low resistance metal material is positioned on the second substrate 170, the pad electrode 172 is melted by laser beam irradiation or is irradiated to the frit pattern 197 by reflecting the laser beam. It is an obstacle to avoid.

Therefore, in order to prevent such a problem, in the embodiment of the present invention, the touch pad electrode 188 is divided into a third region and a fourth region to form a structure of the touch pad electrode 188 differently. to be.

That is, the pad electrode 172 made of an opaque low resistance metal material corresponding to the third region A1 including the frit region FA in which the frit pattern 197 is formed among the regions where the touch pad electrode 188 is formed. Pad electrodes 172 are formed only in correspondence with the fourth region A2, and a plurality of openings are provided in the insulating layer 175 formed in the fourth region A2. The pad electrode 172 is exposed in contact with the pad electrode 172 and is formed so that only the auxiliary pad electrode 190 made of a transparent conductive material is formed.

In the frit region FA in which the frit pattern 197 is formed by the configuration of the touch pad electrode 188, the auxiliary pad electrode 190 made of a transparent conductive material even though the laser beam is irradiated for curing the frit pattern 197. By passing through and reaching 90% or more of the frit pattern 197, the frit pattern 197 can be stably cured.

In addition, the touch type organic light emitting diode according to the embodiment of the present invention does not have a pad electrode 172 made of a low resistance metal material in the frit region FA, so that a defect such as reflection of the laser beam and melting of the pad electrode may be broken. It also has a suppressed effect.

Meanwhile, referring to FIG. 5, the plurality of touch pad electrodes 188 provided on the outer surface of the second substrate 170 are pads made of a low resistance metal material in the fourth area A2 of the pad part PA. The insulating layer 175 is provided in the form of the electrode 172 and the number of openings thereon, and the auxiliary pad electrode 190 made of a transparent conductive material is formed on the insulating layer 175 having the plurality of openings. The pad electrode 172 contacts the pad electrode 172 through the plurality of openings oa and extends to the third region A1.

In addition, a second passivation layer 183 having a pad contact hole (ch) exposing the auxiliary pad electrode 190 is formed on the auxiliary pad electrode 190.

Meanwhile, the touch pad electrode 188 having the above-described configuration may be modified as shown in FIG. 6 (cross section of the pad portion of the second substrate of the touch type organic light emitting diode according to the modification of the embodiment of the present invention). It may be.

That is, the plurality of touch pad electrodes 188 provided on the outer surface of the second substrate 170 may include a pad electrode 172 made of a low resistance metal material in the fourth area A2 of the pad part PA, and the pad electrode 172. An insulating layer 175 having a first pad contact hole ch1 exposing the pad electrode 172 is provided thereon, and a transparent conductive layer is formed on the insulating layer 175 having the first pad contact hole ch1. The auxiliary pad electrode 190 made of a material may be formed to be in contact with the pad electrode 172 through the first pad contact hole ch1 and extend to the third region A1.

110: second substrate 172: pad electrode
173: pad link wiring 188: touch pad electrode
190: auxiliary pad electrode 197: frit pattern
A1: third area A2: fourth area
ch: pad contact hole oa: opening (of insulation layer)
FA: Frit area PA: Pad part

Claims (6)

A display area including a plurality of pixel areas and a non-display area are defined outside thereof, and switching and driving thin film transistors are provided in each pixel area, the first electrode and the organic light emitting layer connected to the drain electrode of the driving thin film transistor, A first substrate having an organic light emitting diode comprising a second electrode formed over the display area;
A second substrate facing the first substrate;
A touch sensor formed on an outer surface of the second substrate;
A plurality of touch pad electrodes formed on the non-display area of the second substrate and connected to the touch sensor;
A frit pattern formed around the display area and intersecting the touch pad electrode in a non-display area between the first and second substrates.
Each of the plurality of touch pad electrodes includes a first pad electrode made of a low resistance metal material and a transparent conductive material contacting the first pad electrode through an insulating layer exposing the first pad electrode. 2. The touch type organic light emitting device of claim 2, wherein the first pad electrode is removed from the second pad electrode, and the second pad electrode is provided at a portion overlapping with the frit pattern.
The method of claim 1,
The touch sensor may include a plurality of first sensing electrodes connected to each other by a first connection pattern or a first sensing wiring on the second substrate, the insulating layer formed on the first sensing electrode, and the insulating layer. And a plurality of second sensing electrodes overlapping the first sensing electrodes and connected to each other by a second connecting pann or a second sensing wiring in the second direction.
The method of claim 1,
The low resistance metal material is any one of aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, molybdenum (Mo), molybdenum (MoTi),
The transparent conductive material is an indium tin oxide (ITO) or indium zinc oxide (IZO) touch type organic light emitting device, characterized in that.
The method of claim 1,
The insulating layer has a plurality of openings corresponding to the first pad electrodes to expose them, or
Or a first pad contact hole exposing the first pad electrode.
The method of claim 1,
And a protective layer having a pad contact hole exposing the second pad electrode on the touch sensor.
The method of claim 1,
A touch type organic light emitting device according to claim 1, wherein a gate line and a data line intersecting each other are provided at a boundary of each pixel region of the first substrate, and a power line line is arranged in parallel with the gate line or data line.

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