KR20120060827A - 웨이퍼 바이어스 전위를 측정하기 위한 방법 및 장치 - Google Patents

웨이퍼 바이어스 전위를 측정하기 위한 방법 및 장치 Download PDF

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Publication number
KR20120060827A
KR20120060827A KR1020127004327A KR20127004327A KR20120060827A KR 20120060827 A KR20120060827 A KR 20120060827A KR 1020127004327 A KR1020127004327 A KR 1020127004327A KR 20127004327 A KR20127004327 A KR 20127004327A KR 20120060827 A KR20120060827 A KR 20120060827A
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KR
South Korea
Prior art keywords
wafer
contact
potential
edge ring
plasma
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Abandoned
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KR1020127004327A
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English (en)
Korean (ko)
Inventor
콘스탄틴 마크라체프
존 발코어
Original Assignee
램 리써치 코포레이션
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Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20120060827A publication Critical patent/KR20120060827A/ko
Abandoned legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • H01J37/32642Focus rings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/32935Monitoring and controlling tubes by information coming from the object and/or discharge
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06Apparatus for monitoring, sorting, marking, testing or measuring

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Plasma Technology (AREA)
KR1020127004327A 2009-08-21 2010-08-18 웨이퍼 바이어스 전위를 측정하기 위한 방법 및 장치 Abandoned KR20120060827A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/545,293 2009-08-21
US12/545,293 US9299539B2 (en) 2009-08-21 2009-08-21 Method and apparatus for measuring wafer bias potential
PCT/IB2010/053735 WO2011021160A2 (en) 2009-08-21 2010-08-18 Method and apparatus for measuring wafer bias potential

Publications (1)

Publication Number Publication Date
KR20120060827A true KR20120060827A (ko) 2012-06-12

Family

ID=43604835

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127004327A Abandoned KR20120060827A (ko) 2009-08-21 2010-08-18 웨이퍼 바이어스 전위를 측정하기 위한 방법 및 장치

Country Status (7)

Country Link
US (1) US9299539B2 (https=)
JP (1) JP5661113B2 (https=)
KR (1) KR20120060827A (https=)
CN (1) CN102484062B (https=)
SG (2) SG10201404395UA (https=)
TW (1) TWI562259B (https=)
WO (1) WO2011021160A2 (https=)

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Also Published As

Publication number Publication date
SG178285A1 (en) 2012-03-29
TWI562259B (en) 2016-12-11
JP2013502718A (ja) 2013-01-24
US20110043228A1 (en) 2011-02-24
CN102484062A (zh) 2012-05-30
WO2011021160A3 (en) 2011-08-11
US9299539B2 (en) 2016-03-29
JP5661113B2 (ja) 2015-01-28
WO2011021160A2 (en) 2011-02-24
TW201133678A (en) 2011-10-01
SG10201404395UA (en) 2014-10-30
CN102484062B (zh) 2015-03-04

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