KR20120023030A - 마이크로플라즈마 생성기 및 마이크로플라즈마 생성 방법들 - Google Patents

마이크로플라즈마 생성기 및 마이크로플라즈마 생성 방법들 Download PDF

Info

Publication number
KR20120023030A
KR20120023030A KR20117028361A KR20117028361A KR20120023030A KR 20120023030 A KR20120023030 A KR 20120023030A KR 20117028361 A KR20117028361 A KR 20117028361A KR 20117028361 A KR20117028361 A KR 20117028361A KR 20120023030 A KR20120023030 A KR 20120023030A
Authority
KR
South Korea
Prior art keywords
plasma
substrate
strip
array
plasma generator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR20117028361A
Other languages
English (en)
Korean (ko)
Inventor
제프리 에이. 호프우드
Original Assignee
트러스티즈 오브 터프츠 칼리지
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 트러스티즈 오브 터프츠 칼리지 filed Critical 트러스티즈 오브 터프츠 칼리지
Publication of KR20120023030A publication Critical patent/KR20120023030A/ko
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/137—Batch treatment of the devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32825—Working under atmospheric pressure or higher
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges
    • H05H1/4622—Microwave discharges using waveguides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
KR20117028361A 2009-04-28 2010-04-27 마이크로플라즈마 생성기 및 마이크로플라즈마 생성 방법들 Withdrawn KR20120023030A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17333409P 2009-04-28 2009-04-28
US61/173,334 2009-04-28

Publications (1)

Publication Number Publication Date
KR20120023030A true KR20120023030A (ko) 2012-03-12

Family

ID=43050726

Family Applications (1)

Application Number Title Priority Date Filing Date
KR20117028361A Withdrawn KR20120023030A (ko) 2009-04-28 2010-04-27 마이크로플라즈마 생성기 및 마이크로플라즈마 생성 방법들

Country Status (7)

Country Link
US (1) US9006972B2 (enExample)
EP (1) EP2425459A4 (enExample)
JP (1) JP5746147B2 (enExample)
KR (1) KR20120023030A (enExample)
AU (1) AU2010245048B2 (enExample)
CA (1) CA2797497A1 (enExample)
WO (1) WO2010129277A2 (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8785881B2 (en) 2008-05-06 2014-07-22 Massachusetts Institute Of Technology Method and apparatus for a porous electrospray emitter
US10125052B2 (en) 2008-05-06 2018-11-13 Massachusetts Institute Of Technology Method of fabricating electrically conductive aerogels
US10308377B2 (en) 2011-05-03 2019-06-04 Massachusetts Institute Of Technology Propellant tank and loading for electrospray thruster
WO2013016497A2 (en) * 2011-07-28 2013-01-31 Trustees Of Tufts College Microplasma generating array
US9960005B2 (en) 2012-08-08 2018-05-01 Massachusetts Institute Of Technology Microplasma generation devices and associated systems and methods
US9669416B2 (en) 2013-05-28 2017-06-06 Massachusetts Institute Of Technology Electrospraying systems and associated methods
US9330889B2 (en) * 2013-07-11 2016-05-03 Agilent Technologies Inc. Plasma generation device with microstrip resonator
US9647414B2 (en) 2014-01-30 2017-05-09 Physical Sciences, Inc. Optically pumped micro-plasma
WO2015183915A1 (en) * 2014-05-27 2015-12-03 The University Of Florida Research Foundation, Inc. Glass interposer integrated high quality electronic components and systems
TWI569690B (zh) * 2015-01-23 2017-02-01 國立臺灣大學 一種電漿產生裝置與其製備方法
US9736920B2 (en) 2015-02-06 2017-08-15 Mks Instruments, Inc. Apparatus and method for plasma ignition with a self-resonating device
CN104955259B (zh) * 2015-04-27 2018-03-23 华东师范大学 一种平面小功率微波微等离子体圆环形阵列源
US10832895B2 (en) 2016-05-19 2020-11-10 Plasmotica, LLC Stand alone microfluidic analytical chip device
JP6316920B1 (ja) * 2016-12-07 2018-04-25 國家中山科學研究院 ガラス基板のセレン化及び硫化工程に用いる設備
US10141855B2 (en) 2017-04-12 2018-11-27 Accion Systems, Inc. System and method for power conversion
US11355317B2 (en) * 2017-12-14 2022-06-07 Applied Materials, Inc. Methods and apparatus for dynamical control of radial uniformity in microwave chambers
JP7239134B2 (ja) * 2018-05-18 2023-03-14 国立大学法人大阪大学 樹脂材と金属材との接合体およびその製造方法
EP3806586B1 (en) * 2018-05-30 2022-07-13 Toshiba Mitsubishi-Electric Industrial Systems Corporation Active gas generation device
CN110049614B (zh) * 2019-04-28 2021-12-03 中国科学院微电子研究所 微波等离子体装置及等离子体激发方法
US11545351B2 (en) 2019-05-21 2023-01-03 Accion Systems, Inc. Apparatus for electrospray emission
EP3879946B1 (en) 2019-11-12 2023-02-15 Toshiba Mitsubishi-Electric Industrial Systems Corporation Activated gas generation device
WO2021106100A1 (ja) 2019-11-27 2021-06-03 東芝三菱電機産業システム株式会社 活性ガス生成装置
FI129609B (en) 2020-01-10 2022-05-31 Picosun Oy Substrate processing apparatus
EP4200218A4 (en) 2020-08-24 2024-08-07 Accion Systems, Inc. PROPELLANT DEVICE
EP4260049A4 (en) * 2020-12-11 2025-01-15 Inficon, Inc. HIGH TEMPERATURE CO-FIRED CERAMIC ANTENNA FOR PLASMA GENERATION
FR3131378B1 (fr) * 2021-12-29 2024-05-31 Centre Nat Etd Spatiales Dispositif de déclenchement de décharge électrostatique et procédé d’utilisation associé.

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3830249A1 (de) 1988-09-06 1990-03-15 Schott Glaswerke Plasmaverfahren zum beschichten ebener substrate
US5938854A (en) * 1993-05-28 1999-08-17 The University Of Tennessee Research Corporation Method and apparatus for cleaning surfaces with a glow discharge plasma at one atmosphere of pressure
AU2003195A (en) * 1994-06-21 1996-01-04 Boc Group, Inc., The Improved power distribution for multiple electrode plasma systems using quarter wavelength transmission lines
DE19943953A1 (de) * 1999-09-14 2001-04-12 Bosch Gmbh Robert Vorrichtung und Verfahren zur Erzeugung eines lokalen Plasmas durch Mikrostrukturelektrodenentladungen mit Mikrowellen
KR100345543B1 (ko) 2000-08-11 2002-07-26 최대규 플라즈마 세정 장치
JP4013570B2 (ja) * 2002-02-06 2007-11-28 松下電器産業株式会社 プラズマ加工方法及び装置
JP2004128159A (ja) * 2002-10-01 2004-04-22 Mitsubishi Heavy Ind Ltd 高周波プラズマ発生装置および高周波プラズマ発生方法
AU2003303538A1 (en) * 2002-12-30 2004-07-29 Northeastern University Low power plasma generator
JP3858093B2 (ja) 2003-01-15 2006-12-13 国立大学法人埼玉大学 マイクロプラズマ生成装置、プラズマアレイ顕微鏡、及びマイクロプラズマ生成方法
US7806077B2 (en) 2004-07-30 2010-10-05 Amarante Technologies, Inc. Plasma nozzle array for providing uniform scalable microwave plasma generation
JP4631046B2 (ja) * 2004-10-01 2011-02-16 国立大学法人 東京大学 マイクロ波励起プラズマ装置及びシステム
US20070170996A1 (en) * 2006-01-20 2007-07-26 Dutton David T Plasma generating devices having alternative ground geometry and methods for using the same
JP4916776B2 (ja) * 2006-05-01 2012-04-18 国立大学法人 東京大学 吹き出し形マイクロ波励起プラズマ処理装置
KR101240842B1 (ko) * 2006-07-28 2013-03-08 도쿄엘렉트론가부시키가이샤 마이크로파 플라즈마원 및 플라즈마 처리장치
JP4787104B2 (ja) 2006-07-31 2011-10-05 株式会社新川 ボンディング装置
CN102836620B (zh) 2006-09-20 2015-07-01 创想科学技术工程株式会社 内燃机、点火塞、等离子设备和使用等离子设备的装置
KR101353684B1 (ko) 2006-11-14 2014-01-20 엘지전자 주식회사 플라즈마 발생장치 및 방법
WO2008090617A1 (ja) * 2007-01-25 2008-07-31 Nissin Inc. 大気圧プラズマガス流の発生方法
US20090065177A1 (en) 2007-09-10 2009-03-12 Chien Ouyang Cooling with microwave excited micro-plasma and ions

Also Published As

Publication number Publication date
EP2425459A2 (en) 2012-03-07
AU2010245048A1 (en) 2011-12-15
CA2797497A1 (en) 2011-11-11
JP5746147B2 (ja) 2015-07-08
WO2010129277A3 (en) 2011-02-03
AU2010245048B2 (en) 2015-03-26
WO2010129277A2 (en) 2010-11-11
US9006972B2 (en) 2015-04-14
EP2425459A4 (en) 2014-07-16
JP2012525684A (ja) 2012-10-22
US20120045863A1 (en) 2012-02-23

Similar Documents

Publication Publication Date Title
US9006972B2 (en) Microplasma generator and methods therefor
CN105122042B (zh) 使用介质谐振器的微波等离子体谱仪
EP0403418B1 (en) High density plasma deposition and etching apparatus
US20200118792A1 (en) Rf antenna producing a uniform near-field poynting vector
US9460884B2 (en) Microplasma generating array
JP2021502688A (ja) 線形化されたエネルギーの無線周波数プラズマイオン供給源
WO2008070002A1 (en) Wide area radio frequency plasma apparatus for processing multiple substrates
CN101802259B (zh) 用于大气压力下的甚高频等离子体辅助cvd的设备和方法及其应用
Latrasse et al. Self-matching plasma sources using 2.45 GHz solid-state generators: microwave design and operating performance
Sobolewski et al. Electrical optimization of plasma-enhanced chemical vapor deposition chamber cleaning plasmas
JP5419055B1 (ja) プラズマ処理装置およびプラズマ処理方法
JP2008300873A (ja) プラズマ表面処理方法及びプラズマ表面処理装置
CA2401220C (en) High frequency plasma beam source
JP2003086581A (ja) 大面積プラズマ生成用アンテナ
Sintsov et al. Measurement of electron temperature in a non-equilibrium discharge of atmospheric pressure supported by focused microwave radiation from a 24 GHz gyrotron
WO2013121467A1 (ja) プラズマ処理装置およびプラズマ処理方法
JP2022525938A (ja) Ｖｈｆプラズマ処理のためのシステム及び方法
US7090742B2 (en) Device for producing inductively coupled plasma and method thereof
JP3396399B2 (ja) 電子デバイス製造装置
CN1270349C (zh) 通过微波微结构电极放电产生局部等离子区的装置及方法
JP4471589B2 (ja) プラズマ発生用アンテナ装置及びプラズマ処理装置
JP2005149887A (ja) プラズマ発生装置用アンテナの整合方法及びプラズマ発生装置
CN101946366B (zh) 具有阻抗转换部的集成微波波导
Oechsner et al. ECWR-Plasma CVD as a novel technique for phase controlled deposition of semiconductor films
WO2007129520A1 (ja) 大気圧プラズマ発生装置及び発生方法

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20111128

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid