CA2797497A1 - Microplasma generator and methods therefor - Google Patents
Microplasma generator and methods therefor Download PDFInfo
- Publication number
- CA2797497A1 CA2797497A1 CA2797497A CA2797497A CA2797497A1 CA 2797497 A1 CA2797497 A1 CA 2797497A1 CA 2797497 A CA2797497 A CA 2797497A CA 2797497 A CA2797497 A CA 2797497A CA 2797497 A1 CA2797497 A1 CA 2797497A1
- Authority
- CA
- Canada
- Prior art keywords
- plasma
- strip
- substrate
- array
- plasma generator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 title claims description 53
- 239000000758 substrate Substances 0.000 claims abstract description 71
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 25
- 230000008878 coupling Effects 0.000 claims abstract description 14
- 238000010168 coupling process Methods 0.000 claims abstract description 14
- 238000005859 coupling reaction Methods 0.000 claims abstract description 14
- 230000008021 deposition Effects 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 13
- 239000004033 plastic Substances 0.000 claims description 8
- 229920003023 plastic Polymers 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000012530 fluid Substances 0.000 claims description 5
- 239000011241 protective layer Substances 0.000 claims description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 239000003989 dielectric material Substances 0.000 claims description 4
- 229910000077 silane Inorganic materials 0.000 claims description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims 1
- 230000001939 inductive effect Effects 0.000 claims 1
- 230000005684 electric field Effects 0.000 abstract description 6
- 210000002381 plasma Anatomy 0.000 description 66
- 239000007789 gas Substances 0.000 description 21
- 239000010410 layer Substances 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 11
- 239000010408 film Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 239000011521 glass Substances 0.000 description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 238000009826 distribution Methods 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000003491 array Methods 0.000 description 6
- 230000005284 excitation Effects 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000005495 cold plasma Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 210000004027 cell Anatomy 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000000427 thin-film deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000013016 damping Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- 238000012994 industrial processing Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 235000002595 Solanum tuberosum Nutrition 0.000 description 1
- 244000061456 Solanum tuberosum Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000012905 input function Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- -1 photocopying Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007753 roll-to-roll coating process Methods 0.000 description 1
- 238000001686 rotational spectrum Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/137—Batch treatment of the devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32366—Localised processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32825—Working under atmospheric pressure or higher
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/461—Microwave discharges
- H05H1/4622—Microwave discharges using waveguides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Analytical Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17333409P | 2009-04-28 | 2009-04-28 | |
| US61/173,334 | 2009-04-28 | ||
| PCT/US2010/032571 WO2010129277A2 (en) | 2009-04-28 | 2010-04-27 | Microplasma generator and methods therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2797497A1 true CA2797497A1 (en) | 2011-11-11 |
Family
ID=43050726
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA2797497A Abandoned CA2797497A1 (en) | 2009-04-28 | 2010-04-27 | Microplasma generator and methods therefor |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9006972B2 (enExample) |
| EP (1) | EP2425459A4 (enExample) |
| JP (1) | JP5746147B2 (enExample) |
| KR (1) | KR20120023030A (enExample) |
| AU (1) | AU2010245048B2 (enExample) |
| CA (1) | CA2797497A1 (enExample) |
| WO (1) | WO2010129277A2 (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8785881B2 (en) | 2008-05-06 | 2014-07-22 | Massachusetts Institute Of Technology | Method and apparatus for a porous electrospray emitter |
| US10125052B2 (en) | 2008-05-06 | 2018-11-13 | Massachusetts Institute Of Technology | Method of fabricating electrically conductive aerogels |
| US10308377B2 (en) | 2011-05-03 | 2019-06-04 | Massachusetts Institute Of Technology | Propellant tank and loading for electrospray thruster |
| WO2013016497A2 (en) * | 2011-07-28 | 2013-01-31 | Trustees Of Tufts College | Microplasma generating array |
| US9960005B2 (en) | 2012-08-08 | 2018-05-01 | Massachusetts Institute Of Technology | Microplasma generation devices and associated systems and methods |
| US9669416B2 (en) | 2013-05-28 | 2017-06-06 | Massachusetts Institute Of Technology | Electrospraying systems and associated methods |
| US9330889B2 (en) * | 2013-07-11 | 2016-05-03 | Agilent Technologies Inc. | Plasma generation device with microstrip resonator |
| US9647414B2 (en) | 2014-01-30 | 2017-05-09 | Physical Sciences, Inc. | Optically pumped micro-plasma |
| WO2015183915A1 (en) * | 2014-05-27 | 2015-12-03 | The University Of Florida Research Foundation, Inc. | Glass interposer integrated high quality electronic components and systems |
| TWI569690B (zh) * | 2015-01-23 | 2017-02-01 | 國立臺灣大學 | 一種電漿產生裝置與其製備方法 |
| US9736920B2 (en) | 2015-02-06 | 2017-08-15 | Mks Instruments, Inc. | Apparatus and method for plasma ignition with a self-resonating device |
| CN104955259B (zh) * | 2015-04-27 | 2018-03-23 | 华东师范大学 | 一种平面小功率微波微等离子体圆环形阵列源 |
| US10832895B2 (en) | 2016-05-19 | 2020-11-10 | Plasmotica, LLC | Stand alone microfluidic analytical chip device |
| JP6316920B1 (ja) * | 2016-12-07 | 2018-04-25 | 國家中山科學研究院 | ガラス基板のセレン化及び硫化工程に用いる設備 |
| US10141855B2 (en) | 2017-04-12 | 2018-11-27 | Accion Systems, Inc. | System and method for power conversion |
| US11355317B2 (en) * | 2017-12-14 | 2022-06-07 | Applied Materials, Inc. | Methods and apparatus for dynamical control of radial uniformity in microwave chambers |
| JP7239134B2 (ja) * | 2018-05-18 | 2023-03-14 | 国立大学法人大阪大学 | 樹脂材と金属材との接合体およびその製造方法 |
| EP3806586B1 (en) * | 2018-05-30 | 2022-07-13 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Active gas generation device |
| CN110049614B (zh) * | 2019-04-28 | 2021-12-03 | 中国科学院微电子研究所 | 微波等离子体装置及等离子体激发方法 |
| US11545351B2 (en) | 2019-05-21 | 2023-01-03 | Accion Systems, Inc. | Apparatus for electrospray emission |
| EP3879946B1 (en) | 2019-11-12 | 2023-02-15 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Activated gas generation device |
| WO2021106100A1 (ja) | 2019-11-27 | 2021-06-03 | 東芝三菱電機産業システム株式会社 | 活性ガス生成装置 |
| FI129609B (en) | 2020-01-10 | 2022-05-31 | Picosun Oy | Substrate processing apparatus |
| EP4200218A4 (en) | 2020-08-24 | 2024-08-07 | Accion Systems, Inc. | PROPELLANT DEVICE |
| EP4260049A4 (en) * | 2020-12-11 | 2025-01-15 | Inficon, Inc. | HIGH TEMPERATURE CO-FIRED CERAMIC ANTENNA FOR PLASMA GENERATION |
| FR3131378B1 (fr) * | 2021-12-29 | 2024-05-31 | Centre Nat Etd Spatiales | Dispositif de déclenchement de décharge électrostatique et procédé d’utilisation associé. |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3830249A1 (de) | 1988-09-06 | 1990-03-15 | Schott Glaswerke | Plasmaverfahren zum beschichten ebener substrate |
| US5938854A (en) * | 1993-05-28 | 1999-08-17 | The University Of Tennessee Research Corporation | Method and apparatus for cleaning surfaces with a glow discharge plasma at one atmosphere of pressure |
| AU2003195A (en) * | 1994-06-21 | 1996-01-04 | Boc Group, Inc., The | Improved power distribution for multiple electrode plasma systems using quarter wavelength transmission lines |
| DE19943953A1 (de) * | 1999-09-14 | 2001-04-12 | Bosch Gmbh Robert | Vorrichtung und Verfahren zur Erzeugung eines lokalen Plasmas durch Mikrostrukturelektrodenentladungen mit Mikrowellen |
| KR100345543B1 (ko) | 2000-08-11 | 2002-07-26 | 최대규 | 플라즈마 세정 장치 |
| JP4013570B2 (ja) * | 2002-02-06 | 2007-11-28 | 松下電器産業株式会社 | プラズマ加工方法及び装置 |
| JP2004128159A (ja) * | 2002-10-01 | 2004-04-22 | Mitsubishi Heavy Ind Ltd | 高周波プラズマ発生装置および高周波プラズマ発生方法 |
| AU2003303538A1 (en) * | 2002-12-30 | 2004-07-29 | Northeastern University | Low power plasma generator |
| JP3858093B2 (ja) | 2003-01-15 | 2006-12-13 | 国立大学法人埼玉大学 | マイクロプラズマ生成装置、プラズマアレイ顕微鏡、及びマイクロプラズマ生成方法 |
| US7806077B2 (en) | 2004-07-30 | 2010-10-05 | Amarante Technologies, Inc. | Plasma nozzle array for providing uniform scalable microwave plasma generation |
| JP4631046B2 (ja) * | 2004-10-01 | 2011-02-16 | 国立大学法人 東京大学 | マイクロ波励起プラズマ装置及びシステム |
| US20070170996A1 (en) * | 2006-01-20 | 2007-07-26 | Dutton David T | Plasma generating devices having alternative ground geometry and methods for using the same |
| JP4916776B2 (ja) * | 2006-05-01 | 2012-04-18 | 国立大学法人 東京大学 | 吹き出し形マイクロ波励起プラズマ処理装置 |
| KR101240842B1 (ko) * | 2006-07-28 | 2013-03-08 | 도쿄엘렉트론가부시키가이샤 | 마이크로파 플라즈마원 및 플라즈마 처리장치 |
| JP4787104B2 (ja) | 2006-07-31 | 2011-10-05 | 株式会社新川 | ボンディング装置 |
| CN102836620B (zh) | 2006-09-20 | 2015-07-01 | 创想科学技术工程株式会社 | 内燃机、点火塞、等离子设备和使用等离子设备的装置 |
| KR101353684B1 (ko) | 2006-11-14 | 2014-01-20 | 엘지전자 주식회사 | 플라즈마 발생장치 및 방법 |
| WO2008090617A1 (ja) * | 2007-01-25 | 2008-07-31 | Nissin Inc. | 大気圧プラズマガス流の発生方法 |
| US20090065177A1 (en) | 2007-09-10 | 2009-03-12 | Chien Ouyang | Cooling with microwave excited micro-plasma and ions |
-
2010
- 2010-04-27 KR KR20117028361A patent/KR20120023030A/ko not_active Withdrawn
- 2010-04-27 AU AU2010245048A patent/AU2010245048B2/en not_active Expired - Fee Related
- 2010-04-27 US US13/266,396 patent/US9006972B2/en active Active
- 2010-04-27 WO PCT/US2010/032571 patent/WO2010129277A2/en not_active Ceased
- 2010-04-27 EP EP10772520.2A patent/EP2425459A4/en not_active Withdrawn
- 2010-04-27 CA CA2797497A patent/CA2797497A1/en not_active Abandoned
- 2010-04-27 JP JP2012508591A patent/JP5746147B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP2425459A2 (en) | 2012-03-07 |
| AU2010245048A1 (en) | 2011-12-15 |
| JP5746147B2 (ja) | 2015-07-08 |
| KR20120023030A (ko) | 2012-03-12 |
| WO2010129277A3 (en) | 2011-02-03 |
| AU2010245048B2 (en) | 2015-03-26 |
| WO2010129277A2 (en) | 2010-11-11 |
| US9006972B2 (en) | 2015-04-14 |
| EP2425459A4 (en) | 2014-07-16 |
| JP2012525684A (ja) | 2012-10-22 |
| US20120045863A1 (en) | 2012-02-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| AU2010245048B2 (en) | Microplasma generator and methods therefor | |
| EP0403418B1 (en) | High density plasma deposition and etching apparatus | |
| US10752994B2 (en) | Apparatus and method for depositing a coating on a substrate at atmospheric pressure | |
| US9460884B2 (en) | Microplasma generating array | |
| US5091049A (en) | High density plasma deposition and etching apparatus | |
| KR102389512B1 (ko) | 선형화된 활성 무선 주파수 플라즈마 이온 소스 | |
| Korzec et al. | Scaling of microwave slot antenna (SLAN): a concept for efficient plasma generation | |
| EP2087502B1 (en) | Method for forming an amorphous silicon film by deposition from a plasma | |
| CN101802259B (zh) | 用于大气压力下的甚高频等离子体辅助cvd的设备和方法及其应用 | |
| CN101978095A (zh) | 同轴型微波辅助沉积与蚀刻系统 | |
| Bienholz et al. | Multiple frequency capacitively coupled plasmas as a new technology for sputter processes | |
| Nagatsu et al. | Production of large-area surface-wave plasmas with an internally mounted planar cylindrical launcher | |
| JP5419055B1 (ja) | プラズマ処理装置およびプラズマ処理方法 | |
| US8635972B2 (en) | Device for forming a film by deposition from a plasma | |
| WO2008052708A1 (en) | Film deposition of amorphous films by electron cyclotron resonance | |
| CN101946366B (zh) | 具有阻抗转换部的集成微波波导 | |
| Liehr et al. | Large area microwave coating technology | |
| Smith et al. | Surface production of negative ions from pulse-biased nitrogen doped diamond within a low-pressure deuterium plasma | |
| Oechsner et al. | ECWR-Plasma CVD as a novel technique for phase controlled deposition of semiconductor films | |
| US9190249B2 (en) | Hollow cathode system, device and method for the plasma-assisted treatment of substrates | |
| JP4967784B2 (ja) | マイクロ波プラズマ発生装置 | |
| Song et al. | Stable microwave coaxial cavity plasma system at atmospheric pressure | |
| Sasai et al. | Magnet-free uniform sputtering of dielectric film by RF and microwave power superposition | |
| Sasai et al. | Production of atmospheric pressure microwave plasma with dielectric half-mirror resonator and its application to polymer surface treatment | |
| Wachtendorf et al. | Thin film growth from a low pressure plasma excited in a supersonic expanding gas jet |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Discontinued |
Effective date: 20160427 |