KR20110139514A - Light emitting device - Google Patents

Light emitting device Download PDF

Info

Publication number
KR20110139514A
KR20110139514A KR1020100059643A KR20100059643A KR20110139514A KR 20110139514 A KR20110139514 A KR 20110139514A KR 1020100059643 A KR1020100059643 A KR 1020100059643A KR 20100059643 A KR20100059643 A KR 20100059643A KR 20110139514 A KR20110139514 A KR 20110139514A
Authority
KR
South Korea
Prior art keywords
led chip
housing
emitting device
light emitting
lead frames
Prior art date
Application number
KR1020100059643A
Other languages
Korean (ko)
Other versions
KR101670951B1 (en
Inventor
한정아
장미연
최승리
Original Assignee
서울반도체 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 서울반도체 주식회사 filed Critical 서울반도체 주식회사
Priority to KR1020100059643A priority Critical patent/KR101670951B1/en
Publication of KR20110139514A publication Critical patent/KR20110139514A/en
Application granted granted Critical
Publication of KR101670951B1 publication Critical patent/KR101670951B1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Abstract

PURPOSE: A light emitting device is provided to optimize optical efficiency by including a groove in the inner wall of the cavity of a housing. CONSTITUTION: In a light emitting device, lead frames(22,23) are spaced from each other. An LED chip(24) is electrically connected to the lead frames. A housing(21) comprises a cavity which exposes the lead frame to outside. A Zener diode(25) is electrically connected to the LED chip. Groove portions(221,231) are included in the inner wall of the cavity. The groove portion connects the Zener diode to the LED chip through a wire.

Description

발광 장치{LIGHT EMITTING DEVICE}Light emitting device {LIGHT EMITTING DEVICE}

본 발명은 발광 장치에 관한 것으로, 특히 하우징의 캐비티 내벽에 와이어 연결을 위한 홈부를 구비한 구조에 의해, 제너다이오드와 함께 LED칩을 실장하더라도 광효율을 최적화할 수 있는 리드프레임의 크기를 구현할 수 있는 발광 장치에 관한 것이다.The present invention relates to a light emitting device, and in particular, by the structure having a groove for connecting wires to the inner wall of the housing, even when the LED chip is mounted with the zener diode, the size of the lead frame can be realized to optimize the light efficiency. It relates to a light emitting device.

일반적으로, 발광 소자는 전류 인가에 의해 P-N 반도체 접합(P-N junction)에서 전자와 정공이 만나 빛을 발하는 소자로서, 통상 발광소자가 탑재된 패키지의 구조로 제작된다.In general, a light emitting device is a device in which electrons and holes meet and emit light at a P-N semiconductor junction by application of current, and are generally manufactured in a package structure in which a light emitting device is mounted.

도 1을 참조하면 종래 측면형의 발광 장치(1)는 서로 이격되게 배치된 리드프레임들(12, 13)과, 캐비티(111)를 구비한 하우징(11)을 포함한다. 캐비티(111)의 내부에는 LED칩(14)이 실장되고, LED칩(14)과 통전을 위한 제 1 및 제 2 와이어(W1, W2), 투광성 수지(16)가 채워진다. 투광성 수지(16)에는 형광물질이 함유될 수 있다. 하우징(11)은 리드프레임들(12, 13)을 지지하며, 사출물에 의해 사출 성형된다.Referring to FIG. 1, the conventional side-shaped light emitting device 1 includes lead frames 12 and 13 spaced apart from each other, and a housing 11 having a cavity 111. The LED chip 14 is mounted in the cavity 111, and the LED chip 14 and the first and second wires W1 and W2 and the light-transmitting resin 16 for energizing the LED chip 14 are filled. The translucent resin 16 may contain a fluorescent material. The housing 11 supports the lead frames 12, 13 and is injection molded by an injection molding.

이러한 발광 장치(1)는 PN 다이오드(chip)를 이용하여 만들며, 방향성 있는 전기적 특성을 가지고 동작하게 된다. 하지만, 잘못 인가될 수 있는 역전류에 의해 발광 장치(1)의 손상이 일어날 수 있다. 이와 같이 발광 장치(1)의 정전기에 의한 불량을 방지하기 위하여 캐비티(111) 내부에 제너다이오드(15)를 함께 실장한다. 실장된 제너다이오드(15)는 제 3 와이어(W3)를 이용하여 LED칩(14)과 전기적으로 연결된다.The light emitting device 1 is made of a PN diode and operates with directional electrical characteristics. However, damage to the light emitting device 1 may occur due to reverse current which may be applied incorrectly. In this way, the zener diode 15 is mounted together inside the cavity 111 in order to prevent defects caused by static electricity of the light emitting device 1. The mounted zener diode 15 is electrically connected to the LED chip 14 using the third wire W3.

이와 같이 제너다이오드(15)를 함께 실장하는 발광 장치(1)의 경우, 리드프레임들(12, 13) 각각에 제너다이오드(15)가 실장될 수 있는 공간 및 와이어 본딩 공간을 별도로 확보해야 한다.As described above, in the case of the light emitting device 1 in which the zener diodes 15 are mounted together, a space in which the zener diodes 15 may be mounted and a wire bonding space may be separately provided in each of the lead frames 12 and 13.

도 2의 (a) 및 (b)는 도 1에 도시된 발광 장치의 평면 및 측면을 도시한 도면으로, 제너다이오드(15)의 실장공간 및 본딩 공간을 확보하기 위하여 확장된 크기의 리드프레임들(12, 13)을 구비한다. 도 2의 (a) 및 (b)와 같이 리드프레임(12, 13)의 크기를 확장한 경우, 기존의 발광 장치의 작업성과 수율이 달라질 수 있으며, 넓어진 실장 공간으로 인해 기존의 발광 장치에 비해 광학적 손실이 발생하게 된다. 또한 리드프레임들(12, 13)의 크기 확장으로 인해 사출물이 채워지는 공간이 줄어들게 되고, 사출물이 채워지는 공간이 작은 만큼 살 두께가 얇게 된다.2 (a) and 2 (b) show a plan view and a side surface of the light emitting device shown in FIG. 1, and leadframes having an extended size to secure a mounting space and a bonding space of the zener diode 15. And (12, 13). When the sizes of the lead frames 12 and 13 are extended as shown in FIGS. Optical loss occurs. In addition, due to the size expansion of the lead frames 12 and 13, the space filled with the injection molding is reduced, and the thickness of the flesh is thin as the space filled with the injection molding is small.

여기서 살 두께는 도 2의 (a) 내지 (d)에 도시된 'A', 'B', 'C, 'D'에 해당하며, 도 2의 (c) 및 (d)는 LED칩만 실장하는 기존의 발광 장치이다. 도 2에서 보듯이, 제너다이오드의 실장공간을 위해 리드프레임들의 크기가 확장된 도 2의 (a) 및 (b)에 도시된 발광 장치에 비해, 도 2의 (c) 및 (d)에 도시된 발광 장치의 살 두께가 두꺼움을 확인할 수 있다. 즉, 도 2의 (a) 및 (b)는 살 두께가 얇아져, 발광 장치의 결합력이 약해질 수 있다. 그리고 외부와 접하는 사출물의 살 두께가 얇아짐에 따라 외부로부터 수분 침투 경로도 짧아져서 발광 장치(1)의 신뢰성을 저하시킬 수 있다.Here, the flesh thickness corresponds to 'A', 'B', 'C,' D 'shown in (a) to (d) of FIG. 2, and (c) and (d) of FIG. It is a conventional light emitting device. As shown in FIG. 2, compared to the light emitting device shown in FIGS. 2A and 2B in which the size of the leadframes is expanded for the mounting space of the zener diode, it is shown in FIGS. 2C and 2D. It can be confirmed that the flesh thickness of the light emitting device is thick. That is, (a) and (b) of FIG. 2 may be thin in thickness, and thus may weaken the bonding force of the light emitting device. In addition, as the thickness of the flesh of the injection-molding material in contact with the outside becomes thinner, the moisture penetration path from the outside becomes shorter, thereby reducing the reliability of the light emitting device 1.

본 발명의 목적은, 하우징의 캐비티 내벽에 와이어 연결을 위한 홈부를 구비한 구조에 의해, 제너다이오드와 함께 LED칩을 실장하더라도 광효율을 최적화할 수 있는 리드프레임의 크기를 구현할 수 있는 발광 장치를 제공함에 있다.SUMMARY OF THE INVENTION An object of the present invention is to provide a light emitting device capable of realizing a size of a lead frame capable of optimizing light efficiency even when an LED chip is mounted together with a zener diode by a structure having a groove for connecting wires to an inner wall of a housing. Is in.

또한 본 발명의 목적은, 리드프레임들과 동일평면상에 위치하도록 캐비티 내부에 채워진 채움부에 의해 수분침투 지연 및 리드프레임들간의 틀어짐(tilt) 현상을 방지할 수 있는 발광 장치를 제공함에도 있다.It is also an object of the present invention to provide a light emitting device capable of preventing moisture penetration delay and tilt between lead frames by filling portions filled in the cavity to be coplanar with the lead frames.

상기 목적을 달성하기 위한 본 발명의 일 실시예에 따른 발광 장치는 서로 이격되게 배치된 리드프레임들; 상기 리드프레임들과 전기적으로 연결되는 LED칩; 상기 리드프레임들을 노출시키는 캐비티를 구비한 하우징; 및 상기 LED칩과 전기적으로 연결되는 제너다이오드를 포함하되, 상기 캐비티 내벽에는 상기 제너다이오드 및 상기 LED칩을 와이어로 연결하기 위한 홈부를 구비한 것을 특징으로 한다.The light emitting device according to an embodiment of the present invention for achieving the above object is a lead frame spaced apart from each other; An LED chip electrically connected to the lead frames; A housing having a cavity exposing the leadframes; And a zener diode electrically connected to the LED chip, wherein the cavity inner wall has a groove portion for connecting the zener diode and the LED chip with a wire.

상기 홈부는 상기 이격된 리드프레임과 인접하면서 서로 반대방향으로 함몰된 것이 바람직하다.Preferably, the grooves are recessed in opposite directions while adjacent to the spaced lead frames.

상기 홈부는 반원형, 직사각형, 또는 삼각형의 형상을 가지는 것이 바람직하다.The groove portion preferably has a semi-circular, rectangular, or triangular shape.

상기 홈부는 상기 LED칩과 연결되는 제 1 와이어가 본딩되는 제 1 홈부와, 상기 제너다이오드와 연결되는 제 2 와이어가 본딩되는 제 2 홈부를 포함하는 것이 바람직하다.Preferably, the groove portion includes a first groove portion to which a first wire connected to the LED chip is bonded, and a second groove portion to which a second wire connected to the zener diode is bonded.

상기 하우징은 상기 하우징의 저면과 상기 캐비티의 바닥면 사이의 제 1 살 두께와, 상기 하우징의 상면과 상기 캐비티의 바닥면 사이의 제 2 살 두께를 포함하고, 상기 제 1 살 두께와 상기 제 2 살 두께가 다른 것이 바람직하다.The housing includes a first flesh thickness between the bottom of the housing and the bottom surface of the cavity, and a second flesh thickness between the top surface of the housing and the bottom surface of the cavity, wherein the first flesh thickness and the second flesh thickness It is preferable that the flesh thickness is different.

상기 제 1 살 두께보다 상기 제 2 살 두께가 두껍게 사출 성형된 경우, 상기 하우징의 저면에는 반사층이 더 설치된 것이 바람직하다.When the second flesh thickness is injection molded to be thicker than the first flesh thickness, it is preferable that a reflective layer is further provided on the bottom of the housing.

상기 제 1 살 두께보다 상기 제 2 살 두께가 얇게 사출 성형된 경우, 상기 하우징의 상면에는 반사층이 더 설치된 것이 바람직하다.When the second flesh thickness is injection molded to be thinner than the first flesh thickness, it is preferable that a reflective layer is further provided on the upper surface of the housing.

본 발명의 일 실시예에 따른 발광 장치는 서로 이격되게 배치된 리드프레임들; 상기 리드프레임들과 전기적으로 연결되는 LED칩; 상기 LED칩을 노출시키는 캐비티를 구비한 하우징; 및 상기 LED칩과 전기적으로 연결되는 제너다이오드를 포함하되, 상기 리드프레임들 중 적어도 하나는 상기 제너다이오드 및 상기 LED칩을 와이어로 연결하기 위한 돌출부를 구비한 것을 특징으로 한다.A light emitting device according to an embodiment of the present invention includes lead frames spaced apart from each other; An LED chip electrically connected to the lead frames; A housing having a cavity exposing the LED chip; And a zener diode electrically connected to the LED chip, wherein at least one of the lead frames has a protrusion for connecting the zener diode and the LED chip with a wire.

상기 하우징은 상기 캐비티에 의해 노출되는 상기 리드프레임들과 동일평면상에 위치하도록 사출물이 더 채워진 채움부를 포함하는 것이 바람직하다.Preferably, the housing includes a filling portion filled with an injection material so as to be coplanar with the lead frames exposed by the cavity.

본 발명의 실시예에 따르면 하우징의 캐비티 내벽에 와이어 연결을 위한 홈부를 구비한 구조에 의해, 제너다이오드와 함께 LED칩을 실장하더라도 광효율을 최적화할 수 있는 리드프레임의 크기를 구현할 수 있는 효과가 있다.According to an embodiment of the present invention, the structure having the groove part for wire connection on the inner wall of the housing has the effect of realizing the size of the lead frame that can optimize the light efficiency even when the LED chip is mounted together with the zener diode. .

또한 본 발명의 실시예에 따르면 리드프레임들과 동일평면상에 위치하도록 캐비티 내부에 채워진 채움부에 의해 수분 침투 지연 및 리드프레임들간의 틀어짐(tilt) 현상을 방지할 수 있는 효과도 있다.In addition, according to an embodiment of the present invention there is an effect that can prevent the delay of moisture penetration and the tilt between the lead frames by the filling portion filled in the cavity to be located on the same plane as the lead frames.

도 1 및 도 2는 종래의 발광 장치를 도시한 도면.
도 3은 본 발명의 일 실시예에 따른 발광 장치를 설명하기 위한 도면.
도 4 및 도 5는 도 3에 도시된 제 1 및 제 2 홈부의 변형 도면.
도 6 및 도 7은 본 발명의 일 실시예에 따른 발광 장치에서 살 두께를 다르게 도시한 도면.
도 8은 본 발명의 다른 실시예에 따른 발광 장치를 설명하기 위한 도면.
도 9는 도 8에 도시된 발광 장치에서 살 두께를 보강한 발광 장치를 도시한 도면.1 and 2 show a conventional light emitting device.
3 is a view for explaining a light emitting device according to an embodiment of the present invention;
4 and 5 are modified views of the first and second groove portions shown in FIG.
6 and 7 are views showing different thicknesses of flesh in a light emitting device according to an embodiment of the present invention.
8 is a view for explaining a light-emitting device according to another embodiment of the present invention.
FIG. 9 is a view showing a light emitting device having reinforced flesh thickness in the light emitting device shown in FIG. 8; FIG.

이하, 첨부한 도면들을 참조하여 본 발명의 실시예들을 상세히 설명하기로 한다. 다음에 소개되는 실시예들을 당업자에게 본 발명의 사상이 충분히 전달될 수 있도록 하기 위해 예로서 제공되는 것이다. 따라서, 본 발명은 이하 설명되는 실시예들에 한정되지 않고 다른 형태로 구체화될 수도 있다. 그리고, 도면들에 있어서, 구성요소의 폭, 길이, 두께 등은 편의를 위하여 과장되어 표현될 수 있다. 명세서 전체에 걸쳐서 동일한 참조번호들은 동일한 구성요소들을 나타낸다.Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided as examples to sufficiently convey the spirit of the present invention to those skilled in the art. Accordingly, the present invention is not limited to the embodiments described below and may be embodied in other forms. And, in the drawings, the width, length, thickness, etc. of the components may be exaggerated for convenience. Like numbers refer to like elements throughout.

도 3은 본 발명의 일 실시예에 따른 발광 장치를 설명하기 위한 도면이고, 도 4 및 도 5는 도 3에 도시된 제 1 및 제 2 홈부의 변형 도면이다.3 is a view illustrating a light emitting device according to an exemplary embodiment of the present invention, and FIGS. 4 and 5 are modified views of the first and second grooves shown in FIG. 3.

도 3을 참조하면, 본 발명의 일 실시예에 따른 발광 장치(2)는 캐비티(211)를 구비한 하우징(21)과, 하우징(21)의 내측에서 노출되며 외측으로 돌출 형성된 리드프레임들(22, 23)과, 광을 방출하기 위한 LED칩(24)과, LED칩(24)을 ESD로 보호하기 위한 제너다이오드(25)와, LED칩(24) 및 제너다이오드(25)를 리드프레임들(22, 23)과 전기적으로 연결하기 위한 와이어들(W1, W2, W3)과, LED칩(24)을 봉지하는 봉지부(26)를 포함한다.Referring to FIG. 3, the light emitting device 2 according to the exemplary embodiment may include a housing 21 having a cavity 211 and lead frames exposed from the inside of the housing 21 and protruding outwards. 22, 23, an LED chip 24 for emitting light, a zener diode 25 for protecting the LED chip 24 with ESD, and an LED chip 24 and a zener diode 25 Wires W1, W2, and W3 for electrically connecting the fields 22 and 23, and an encapsulation part 26 encapsulating the LED chip 24.

하우징(21)의 캐비티(211) 내벽에는 본딩 영역 확장을 위한 홈부(221, 231)가 형성된다. 홈부(221, 231에 의해 노출된 리드프레임의 영역은 LED칩(24)과 제너다이오드(25)를 와이어로 연결하기 위한 본딩영역이다. 본 실시예예서는 캐비티(211)의 내벽에 두개의 홈부(221, 231)가 형성된 것으로 설명하고 있지만, 제너다이오드(25)를 와이어로 연결하기 위한 하나의 홈부가 형성된 것도 고려될 수 있다.Grooves 221 and 231 are formed on the inner wall of the cavity 21 to expand the bonding area. The area of the lead frame exposed by the grooves 221 and 231 is a bonding area for connecting the LED chip 24 and the zener diode 25 with wires. In this embodiment, two grooves (2) are formed on the inner wall of the cavity 211. Although 221 and 231 are described as being formed, one groove portion for connecting the zener diode 25 with a wire may also be considered.

홈부(221, 231)는 이격된 리드프레임들(22, 23)에 인접하게 각각 위치하되, 서로 반대방향으로 함몰된 형상을 갖는다. 본 실시예에서는 본딩(bonding)이 가능한 크기의 반원 형상의 홈부(221, 231)가 캐비티(211)의 내벽에 구비된 것으로 도시하고 있지만, 도 4 및 도 5에 도시된 바와 같은 형상도 LED칩와 제너다이오드를 와이어로 연결하기 위한 본딩 영역을 충분히 확보할 수 있다.The grooves 221 and 231 are positioned adjacent to the lead frames 22 and 23 spaced apart from each other, but have recessed shapes in opposite directions. In the present exemplary embodiment, the semicircular grooves 221 and 231 having a size that can be bonded are illustrated on the inner wall of the cavity 211. However, the shapes as shown in FIGS. It is possible to sufficiently secure the bonding area for connecting the zener diodes with wires.

이와 같은 홈부(221, 231)가 캐비티(211)의 내벽에 각각 형성된 구조에 의해, LED칩(24)과 함께 제너다이오드(25)를 실장하더라도 종래 리드프레임들의 전체 크기를 확장시킨 발광장치에 비해 광손실을 줄일 수 있다. 즉, 종래의 발광 장치(1)는 제너다이오드의 실장을 위하여 리드프레임들의 크기를 전체적으로 확장함에 따라 넓어진 리드프레임으로 인해 광학적 손실이 발생하였는데, 본 실시예에서는 홈부(221, 231)를 제외하고 기존의 리드프레임들과 동일한 크기를 가짐에 따라 리드프레임의 전체적인 확장으로 인한 광 손실을 방지할 수 있다.The grooves 221 and 231 are formed on the inner wall of the cavity 211, respectively, so that even when the zener diode 25 is mounted together with the LED chip 24, the light emitting device in which the overall size of the lead frames is expanded, is compared. Light loss can be reduced. That is, in the conventional light emitting device 1, optical loss occurs due to a wider lead frame as the lead frames are enlarged as a whole for mounting the zener diodes. By having the same size as the leadframes of the can be prevented light loss due to the overall expansion of the leadframe.

상술된 홈부(221, 231)를 구비하면서 리드프레임들(22, 23)을 지지하도록 하우징(21)이 사출 성형된다. 하우징(21)은 발광 장치(2)의 전체 구조를 지지하며 보호하기 위한 몸체로서, 폴리프탈아미드(Poly Phthal Amid; PPA) 또는 액정 고분자 수지(Liquid Crystal Polymer; LCP) 등과 같은 전기 절연성 물질로 제작될 수 있다.The housing 21 is injection molded to support the lead frames 22, 23 with the grooves 221, 231 described above. The housing 21 is a body for supporting and protecting the entire structure of the light emitting device 2. The housing 21 is made of an electrically insulating material such as poly phthalamide (PPA) or liquid crystal polymer (LCP). Can be.

LED칩(24)의 상부를 개방시키는 캐비티(211)는 소정의 기울기를 가진다. LED칩(24)은 캐비티(211)의 바닥면에 실장될 수 있고, 일 리드프레임(22)에 부착될 수도 있다. 리드프레임들(22, 23)은 LED칩(24)에 외부 전원을 인가하기 위한 것으로, 리드프레임들(22, 23)의 일부분은 하우징(21)의 내측에서 노출되고, 나머지 일부분은 하우징(21) 외측에 돌출되어 외부 전원을 인가받을 수 있도록 형성된다.The cavity 211 which opens the upper part of the LED chip 24 has a predetermined inclination. The LED chip 24 may be mounted on the bottom surface of the cavity 211, and may be attached to the lead frame 22. The lead frames 22 and 23 are for applying an external power source to the LED chip 24. A part of the lead frames 22 and 23 is exposed inside the housing 21, and the other part is the housing 21. Protrude outward to form an external power source.

LED칩(24)은 P-N 접합 구조를 갖는 화합물 반도체 적층 구조로서, 소수 캐리어(전자 또는 정공)들의 재결합에 의하여 발광되는 현상을 이용한다.The LED chip 24 is a compound semiconductor stacked structure having a P-N junction structure, and utilizes a phenomenon in which light is emitted by recombination of minority carriers (electrons or holes).

제너다이오드(25)는 ESD(ElectroStatic Discharge)로부터 LED칩(24)을 보호하도록 실장된다. 즉, 제너다이오드(25)는 반도체 p-n 접합 또는 n-p 접합으로 비교적 큰 역방향의 전압을 가했을 때, 어떤 전압으로 급격하게 큰 전류가 흐르기 시작하고, 그 전압이 일정하게 유지되는 현상을 이용한 반도체 소자로서, 발광 장치(2)에 적용되면 정전기 혹은 급격한 전류가 공급되는 경우에도 정전압을 유지할 수 있어 제품에 대한 신뢰성을 증대시킬 수 있다.The zener diode 25 is mounted to protect the LED chip 24 from electrostatic discharge (ESD). That is, the zener diode 25 is a semiconductor device using the phenomenon that when a relatively large reverse voltage is applied to a semiconductor pn junction or an np junction, a large current starts to flow at a certain voltage and the voltage is kept constant. When applied to the light emitting device 2, it is possible to maintain a constant voltage even when static electricity or a rapid current is supplied, thereby increasing the reliability of the product.

LED칩(24) 및 제너다이오드(25)는 하우징(24) 상에 페이스트(미도시)를 이용하여 부착된다. 페이스트는 비도전성 물질 또는 도전성 물질로 형성할 수 있는데, 비도전성 물질은 에폭시 수지, 실리콘 수지 등을 이용하고, 도전성 물질은 은 페이스트를 이용할 수 있다. LED칩(24)은 비도전성 페이스트에 의해 부착되며, 제너다이오드(25)는 도전성 페이스트에 의해 부착될 수 있다. 또한 LED칩(24)은 제 2 리드프레임(23) 또는 하우징(21) 상에 부착될 수 있고, 제너다이오드(25)는 제 1 리드프레임(22) 상에 부착될 수 있다.The LED chip 24 and the zener diode 25 are attached to the housing 24 using a paste (not shown). The paste may be formed of a non-conductive material or a conductive material. The non-conductive material may use an epoxy resin, a silicone resin, or the like, and the conductive material may use a silver paste. The LED chip 24 may be attached by a non-conductive paste, and the zener diode 25 may be attached by a conductive paste. In addition, the LED chip 24 may be attached on the second lead frame 23 or the housing 21, and the zener diode 25 may be attached on the first lead frame 22.

와이어들(W1, W2, W3)은 LED칩(24) 및 제너다이오드(25)를 리드프레임들(22,23)과 전기적으로 연결한다. 와이어들(W1, W2, W3)은 와이어 접합 공정 등을 통해 금(Au) 또는 알루미늄(Al)으로 형성될 수 있다. 제 1 와이어(W1)은 제 2 리드프레임(23) 상에 비도전성 물질에 의해 부착된 LED칩(24)과, 제 2 리드프레임(23)을 전기적으로 연결시키고, 제 2 와이어(W2)는 제 1 리드프레임(22)에 마련된 제 1 홈부(221)에 본딩되어 LED칩(24)을 제 1 및 제 2 리드프레임(22, 23)과 전기적으로 연결시킨다. 또한 제 3 와이어(W3)는 제 2 리드프레임(23)에 마련된 제 2 홈부(231)에 본딩되어, 제 1 리드프레임(22)에 실장된 제너다이오드(25)를 제 1 및 제 2 리드프레임(22, 23)과 전기적으로 연결시킨다. 이때, 제너다이오드(25)는 도전성 페이스트에 의해 제 1 리드프레임(22)과 전기적으로 연결되어 부착되기 때문에 별도의 와이어가 필요없게 된다.The wires W1, W2 and W3 electrically connect the LED chip 24 and the zener diode 25 to the lead frames 22 and 23. The wires W1, W2, and W3 may be formed of gold (Au) or aluminum (Al) through a wire bonding process. The first wire W1 electrically connects the LED chip 24 attached by the non-conductive material to the second lead frame 23 and the second lead frame 23, and the second wire W2 is It is bonded to the first groove 221 provided in the first lead frame 22 to electrically connect the LED chip 24 with the first and second lead frames 22 and 23. In addition, the third wire W3 is bonded to the second groove part 231 provided in the second lead frame 23 to replace the zener diode 25 mounted on the first lead frame 22 with the first and second lead frames. Electrical connection with (22, 23). At this time, since the zener diode 25 is electrically connected to and attached to the first lead frame 22 by the conductive paste, a separate wire is not required.

봉지부(26)는 LED칩(24) 및 제너다이오드(25)를 봉지하고 LED칩(24) 및 제너다이오드(25)와 연결된 와이어들(W1, W2, W3)을 고정시키는 역할을 한다. 또한 봉지부(26)는 LED칩(24)에서 발생되는 광을 모아주는 렌즈의 역할도 할 수 있다. 이러한 봉지부(26)는 LED칩(24)에서 발생된 광을 외부로 투과시켜야 하므로, 에폭시 수지 또는 실리콘 수지 등과 같은 투명 수지로 형성된다. 또한 봉지부(26)에는 LED칩(24)으로부터 방출된 광을 산란에 의해 더 확산시킴으로써 균일하게 발광시키기 위해 확산제(미도시)를 더 첨가할 수 있다. 또한 봉지부(26) 내부에는 형광체(미도시)를 더 첨가할 수 있다. 형광체는 LED칩(24)으로부터 발생된 광의 일부를 흡수하여 흡수된 광과 상이한 파장의 광을 방출하며, 임자결정(Host Lattice)의 적절한 위치에 불순물이 혼입된 활성 이온으로 구성된다. 활성이온은 발광 과정에 관여하는 에너지 준위를 결정함으로써 발광색을 결정하며, 그 발광색은 결정 구조 내에서 활성 이온이 갖는 기저 상태와 여기 상태의 에너지 차(Energy Gap)에 의해 결정된다.The encapsulation part 26 encapsulates the LED chip 24 and the zener diode 25 and fixes the wires W1, W2, and W3 connected to the LED chip 24 and the zener diode 25. In addition, the encapsulation part 26 may also serve as a lens for collecting light generated from the LED chip 24. Since the encapsulation part 26 must transmit the light generated by the LED chip 24 to the outside, it is formed of a transparent resin such as an epoxy resin or a silicone resin. In addition, a diffusion agent (not shown) may be further added to the encapsulation part 26 to uniformly emit light by further diffusing the light emitted from the LED chip 24 by scattering. In addition, a phosphor (not shown) may be further added to the encapsulation part 26. The phosphor absorbs a part of the light generated from the LED chip 24 and emits light having a wavelength different from that of the absorbed light, and is composed of active ions in which impurities are incorporated at appropriate positions of the host crystal. The active ion determines the emission color by determining the energy level involved in the light emission process, and the emission color is determined by the energy gap between the ground state and the excited state of the active ion in the crystal structure.

도 6 및 도 7은 본 발명의 일 실시예에 따른 발광 장치의 살 두께를 다르게 도시한 도면이다.6 and 7 illustrate different flesh thicknesses of the light emitting device according to the exemplary embodiment.

도 6 및 도 7은 제 1 및 제 2 살 두께(A, B)가 앞선 실시예와 상이하다. 이와 같이 상이한 살 두께를 가지도록 사출 성형되는 하우징(51, 61)에 의해 목표로 하는 광을 원하는 방향으로 방출시킬 수 있다.6 and 7 are different from the embodiment in which the first and second flesh thicknesses A and B are earlier. Thus, the target light can be emitted in a desired direction by the housings 51 and 61 which are injection molded to have different flesh thicknesses.

도 6을 참조하면, 본 발명의 다른 실시예에 따른 발광 장치(6)의 살 두께는 측면형 타입의 발광 장치의 경우, 서로 이격되게 배치된 리드프레임들(52, 53)을 기준으로 하우징(51)의 상면(U)과 하우징(51)의 저면(D) 사이의 두께를 말한다.Referring to FIG. 6, the thickness of the flesh of the light emitting device 6 according to another embodiment of the present invention is based on the lead frames 52 and 53 spaced apart from each other in the case of the side type light emitting device. The thickness between the upper surface U of 51 and the lower surface D of the housing 51 is referred to.

본 발명의 다른 실시예에 따른 발광 장치(5)는 제 1 살 두께(A)가 제 2 살 두께(B) 보다 얇은 구조를 갖는다. 제 1 및 제 2 살 두께(A, B)를 포함하는 하우징(51)의 캐비티(511) 내부에 실장된 LED칩(54)에서 광이 얇은 제 1 살 두께(A)를 투과될 수 있다. 이에 따라, 하우징(51)의 상면(U)에는 반사층(513)이 설치되는 것이 바람직하다. 반사층(513)은 고반사율을 가지는 재료로 구성될 수 있다. 한편, 실장회로기판측에 있어서 반사율을 향상시킬 수 없는 경우, 또는 향상하는 것이 용이하지 않는 경우, 또는 발광 장치(5)가 탑재될 제품의 구조 제약이 있는 경우 제 2 살 두께(B)를 가지는 하우징(51)의 저면(D)을 실장회로기판측의 실장면으로 하는 것도 좋다.The light emitting device 5 according to another embodiment of the present invention has a structure in which the first thickness A is thinner than the second thickness B. FIG. In the LED chip 54 mounted inside the cavity 511 of the housing 51 including the first and second flesh thicknesses A and B, light may pass through the thin first flesh thickness A. FIG. Accordingly, the reflective layer 513 is preferably provided on the upper surface U of the housing 51. The reflective layer 513 may be made of a material having a high reflectance. On the other hand, when the reflectance cannot be improved on the mounting circuit board side, or when it is not easy to improve, or when there is a structural limitation of the product on which the light emitting device 5 is to be mounted, it has a second thickness B. The bottom surface D of the housing 51 may be a mounting surface on the mounting circuit board side.

도 6의 발광 장치(5)와 반대인 도 7에 도시된 발광 장치(6)는 제 2 살 두께(B)가 제 1 살 두께(A) 보다 얇은 구조를 갖는다. 얇은 제 2 살 두께(B)를 가지는 하우징(61)의 저면(D)이 실장회로기판에 실장된다. 따라서, 하우징(61)의 저면(D)에 반사층(613)이 설치되거나, 또는 실장회로기판에 고반사율을 가지는 금속을 도금하여 제 2 살 두께(B)를 투과한 광을 실장회로기판에서 반사시켜 충분한 반사율을 확보하는 것도 가능하다.The light emitting device 6 shown in FIG. 7 opposite to the light emitting device 5 of FIG. 6 has a structure in which the second flesh thickness B is thinner than the first flesh thickness A. FIG. The bottom surface D of the housing 61 having a thin second thickness B is mounted on the mounting circuit board. Therefore, the reflective layer 613 is provided on the bottom surface D of the housing 61, or the metal having high reflectivity is plated on the mounting circuit board to reflect the light transmitted through the second thickness B on the mounting circuit board. It is also possible to ensure sufficient reflectance.

이하에서는 앞선 실시예들의 홈부 대신에, 본딩 영역을 확장하기 위해 리드프레임들에 형성된 돌출부를 가지는 발광장치에 대하여 설명하기로 한다.Hereinafter, a light emitting device having protrusions formed in the lead frames in order to extend the bonding area, instead of the grooves of the foregoing embodiments, will be described.

도 8은 본 발명의 다른 실시예에 따른 발광 장치를 설명하기 위한 도면이다.8 is a view for explaining a light emitting device according to another embodiment of the present invention.

도 8을 참조하면, 본 발명의 실시예에 따른 발광 장치(7)는 LED칩(74)과 제너다이오드(75)를 와이어로 연결하기 위한 돌출부(721, 723)가 형성된다. 돌출부(721, 723)의 형상은 본딩이 가능한 크기의 형상으로, 반원형상, 삼각형상, 사각 형상등이 채택될 수 있다. 돌출부(721, 723)는 이격된 리드프레임들(72, 73)과 인접하면서도 서로 반대방향으로 돌출되어 있다.Referring to FIG. 8, in the light emitting device 7 according to the exemplary embodiment, protrusions 721 and 723 for connecting the LED chip 74 and the zener diode 75 with wires are formed. The protrusions 721 and 723 have a shape that can be bonded, and a semicircle shape, a triangle shape, a square shape, or the like may be adopted. The protrusions 721 and 723 protrude in opposite directions while adjacent to the spaced lead frames 72 and 73.

이와 같은 돌출부(721, 723)가 리드프레임들(72, 73)에 각각 형성된 구조에 의해 LED칩(74)과 함께 제너다이오드(75)를 실장하더라도 종래의 리드프레임들의 전체적인 크기를 확장시킨 발광장치에 비해 광 손실을 줄일 수 있다.Although the protrusions 721 and 723 are formed on the lead frames 72 and 73 respectively, the light emitting device which extends the overall size of the conventional lead frames even when the zener diode 75 is mounted together with the LED chip 74. Compared with this, the light loss can be reduced.

도 9는 도 8에 도시된 발광 장치에서 살 두께를 보강한 발광 장치를 도시한 도면이다.FIG. 9 is a view illustrating a light emitting device having reinforced flesh thickness in the light emitting device shown in FIG. 8.

도 9를 참조하면, 본 발명의 또 다른 실시예에 따른 발광 장치(8)는 홈부를 구비한 앞선 실시예들의 발광 장치와 달리, 리드프레임들(52, 53)의 크기를 줄이고, 줄인 공감만큼 사출물이 더 채워져 발광 장치(8)의 살 두께를 보강할 수 있다. Referring to FIG. 9, the light emitting device 8 according to another embodiment of the present invention reduces the size of the lead frames 52 and 53 and reduces the size of the lead frames 52 and 53, unlike the light emitting devices of the previous embodiments having grooves. The injection molding may be further filled to reinforce the flesh thickness of the light emitting device 8.

본 실시예에서, 하우징(81)의 상면(U)과 그 하우징(81)의 상면(U)에 인접한 리드프레임 사이를 제 1 살 두께(A)라고 하고, 하우징(81)의 저면(D)과 그 하우징(81)의 저면(D)에 인접한 리드프레임 사이를 제 2 살 두께(B)라고 하며, 제 1 및 제 2 살 두께(A, B)가 동일한 두께를 가지도록 사출 성형될 수 있다.In the present embodiment, between the upper surface U of the housing 81 and the lead frame adjacent to the upper surface U of the housing 81 is called the first thickness A and the bottom surface D of the housing 81 Between the lead frame adjacent to the bottom surface D of the housing 81 is called the second thickness B, and the first and second thickness A and B may be injection molded to have the same thickness. .

하우징(81)에는 리드프레임들(82, 83)과 동일평면상에 있도록 사출물이 더 채워지는 채움부(812)를 구비할 수 있다. 이러한 채움부(812)에 의해 발광 장치(8)의 상면에서 LED칩(84)으로 향하는 수분 침투를 지연시킬 수 있고, 리드프레임 양극간의 틀어짐(tilt)을 막을 수 있다.The housing 81 may include a filling part 812 that is further filled with the injection material so as to be coplanar with the lead frames 82 and 83. This filling portion 812 can delay the penetration of moisture from the upper surface of the light emitting device 8 to the LED chip 84, and can prevent the tilt between the lead frame anodes.

이상의 본 발명은 상기에 기술된 실시예들에 의해 한정되지 않고, 당업자들에 의해 다양한 변형 및 변경을 가져올 수 있으며, 이는 첨부된 청구항에서 정의되는 본 발명의 취지와 범위에 포함된다.The invention being thus described, it will be obvious that the same way may be varied in many ways. Such modifications are intended to be within the spirit and scope of the invention as defined by the appended claims.

2 : 발광 장치 21 : 하우징
211 : 캐비티 22, 23 : 리드프레임들
221, 231 : 홈부 24 : LED칩
25 : 제너다이오드 26 : 봉지부
W1, W2, W3 : 제 1 내지 제 3 와이어2: light emitting device 21: housing
211: cavity 22, 23: leadframes
221, 231 groove 24 LED chip
25 zener diode 26 encapsulation
W1, W2, W3: first to third wire

Claims (9)

서로 이격되게 배치된 리드프레임들;
상기 리드프레임들과 전기적으로 연결되는 LED칩;
상기 리드프레임들을 노출시키는 캐비티를 구비한 하우징; 및
상기 LED칩과 전기적으로 연결되는 제너다이오드를 포함하되,
상기 캐비티 내벽에는 상기 제너다이오드 및 상기 LED칩을 와이어로 연결하기 위한 홈부를 구비한 것을 특징으로 하는 발광 장치.Lead frames spaced apart from each other;
An LED chip electrically connected to the lead frames;
A housing having a cavity exposing the leadframes; And
Including zener diode electrically connected to the LED chip,
And a groove portion formed at an inner wall of the cavity to connect the zener diode and the LED chip with a wire. 청구항 1에 있어서,
상기 홈부는 상기 이격된 리드프레임과 인접하면서 서로 반대방향으로 함몰된 것을 특징으로 하는 발광 장치.The method according to claim 1,
And the groove portion is adjacent to the spaced lead frame and recessed in opposite directions to each other. 청구항 1 또는 청구항 2에 있어서,
상기 홈부는 반원형, 직사각형, 또는 삼각형의 형상을 가지는 것을 특징으로 하는 발광 장치.The method according to claim 1 or 2,
And the groove portion has a semi-circular, rectangular, or triangular shape. 청구항 1에 있어서,
상기 홈부는
상기 LED칩과 연결되는 제 1 와이어가 본딩되는 제 1 홈부와,
상기 제너다이오드와 연결되는 제 2 와이어가 본딩되는 제 2 홈부를 포함하는 것을 특징으로 하는 발광 장치.The method according to claim 1,
The groove portion
A first groove portion to which a first wire connected to the LED chip is bonded;
And a second groove portion to which a second wire connected to the zener diode is bonded. 청구항 1에 있어서,
상기 하우징은 상기 하우징의 저면과 상기 캐비티의 바닥면 사이의 제 1 살 두께와, 상기 하우징의 상면과 상기 캐비티의 바닥면 사이의 제 2 살 두께를 포함하고,
상기 제 1 살 두께와 상기 제 2 살 두께가 다른 것을 특징으로 하는 발광 장치.The method according to claim 1,
The housing comprises a first flesh thickness between a bottom of the housing and a bottom surface of the cavity and a second flesh thickness between an upper surface of the housing and a bottom surface of the cavity,
The first flesh thickness and the second flesh thickness are different light emitting device. 청구항 5에 있어서,
상기 제 1 살 두께보다 상기 제 2 살 두께가 두껍게 사출 성형된 경우, 상기 하우징의 저면에는 반사층이 더 설치된 것을 특징으로 하는 발광 장치.The method according to claim 5,
When the second flesh thickness is injection molded thicker than the first flesh thickness, the light emitting device, characterized in that the reflective layer is further provided on the bottom surface of the housing. 청구항 5에 있어서,
상기 제 1 살 두께보다 상기 제 2 살 두께가 얇게 사출 성형된 경우, 상기 하우징의 상면에는 반사층이 더 설치된 것을 특징으로 하는 발광 장치.The method according to claim 5,
The light emitting device of claim 1, wherein when the second thickness is thinner than the first thickness, the reflective layer is further provided on the upper surface of the housing. 서로 이격되게 배치된 리드프레임들;
상기 리드프레임들과 전기적으로 연결되는 LED칩;
상기 LED칩을 노출시키는 캐비티를 구비한 하우징; 및
상기 LED칩과 전기적으로 연결되는 제너다이오드를 포함하되,
상기 리드프레임들 중 적어도 하나는 상기 제너다이오드 및 상기 LED칩을 와이어로 연결하기 위한 돌출부를 구비한 것을 특징으로 하는 발광 장치.Lead frames spaced apart from each other;
An LED chip electrically connected to the lead frames;
A housing having a cavity exposing the LED chip; And
Including zener diode electrically connected to the LED chip,
At least one of the lead frames includes a protrusion for connecting the zener diode and the LED chip with a wire. 청구항 8에 있어서,
상기 하우징은 상기 캐비티에 의해 노출되는 상기 리드프레임들과 동일평면상에 위치하도록 사출물이 더 채워진 채움부를 포함하는 것을 특징으로 하는 발광 장치.The method according to claim 8,
And the housing includes a filling part filled with an injection material so as to be coplanar with the lead frames exposed by the cavity.
KR1020100059643A 2010-06-23 2010-06-23 Light emitting device KR101670951B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020100059643A KR101670951B1 (en) 2010-06-23 2010-06-23 Light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100059643A KR101670951B1 (en) 2010-06-23 2010-06-23 Light emitting device

Publications (2)

Publication Number Publication Date
KR20110139514A true KR20110139514A (en) 2011-12-29
KR101670951B1 KR101670951B1 (en) 2016-10-31

Family

ID=45504986

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100059643A KR101670951B1 (en) 2010-06-23 2010-06-23 Light emitting device

Country Status (1)

Country Link
KR (1) KR101670951B1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140035215A (en) * 2012-09-13 2014-03-21 엘지이노텍 주식회사 Light emitting device and lighting system
KR20170025322A (en) * 2015-08-28 2017-03-08 엘지이노텍 주식회사 Light emitting device package
KR20190025868A (en) * 2019-02-28 2019-03-12 엘지이노텍 주식회사 A light emitting device package
KR20190100144A (en) * 2019-08-21 2019-08-28 엘지이노텍 주식회사 Light emitting device and lighting system

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100774251B1 (en) * 2006-10-17 2007-11-07 주식회사 우리이티아이 Led package for having to round type inner reflected layer in the lead frame
JP2009200321A (en) * 2008-02-22 2009-09-03 Toshiba Corp Light-emitting device and its manufacturing method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140035215A (en) * 2012-09-13 2014-03-21 엘지이노텍 주식회사 Light emitting device and lighting system
KR20170025322A (en) * 2015-08-28 2017-03-08 엘지이노텍 주식회사 Light emitting device package
WO2017039237A1 (en) * 2015-08-28 2017-03-09 엘지이노텍(주) Light emitting device package and light emitting apparatus
CN107949921A (en) * 2015-08-28 2018-04-20 Lg 伊诺特有限公司 Light emitting device package and light-emitting device
US10593848B2 (en) 2015-08-28 2020-03-17 Lg Innotek Co., Ltd. Light emitting device package and light emitting apparatus
KR20190025868A (en) * 2019-02-28 2019-03-12 엘지이노텍 주식회사 A light emitting device package
KR20190100144A (en) * 2019-08-21 2019-08-28 엘지이노텍 주식회사 Light emitting device and lighting system

Also Published As

Publication number Publication date
KR101670951B1 (en) 2016-10-31

Similar Documents

Publication Publication Date Title
KR100981214B1 (en) Light emitting diode package
JP5999929B2 (en) Light emitting device package and lighting system using the same
JP6312999B2 (en) LIGHT EMITTING ELEMENT AND LIGHTING SYSTEM HAVING THE SAME
US9059386B2 (en) Light emitting diode package
US20070246729A1 (en) High efficiency LED package
US9899587B2 (en) Lead frame and light emitting diode package having the same
KR20090044306A (en) Light emitting diode package
KR101318969B1 (en) Light emitting diode
KR101670951B1 (en) Light emitting device
US20190355888A1 (en) Light emitting chip and associated package structure
JP5405602B2 (en) LED package and frame for LED package
KR101886073B1 (en) Light emitting device and light unit having thereof
KR101719641B1 (en) Light emitting device
KR101121728B1 (en) Led package with heat radiating structure
CN110859052B (en) Light emitting diode package
KR20120030475A (en) Light emitting diode package
KR20100136050A (en) Heat dissipating led package
TWI531096B (en) Sideview light emitting diode package and method for manufacturing the same
KR20070025008A (en) Lens mount type light emitting diode package
KR20110051176A (en) Lens mount type light emitting diode package
KR20110039228A (en) Lens mount type light emitting diode package
KR101337600B1 (en) Lens mount type light emitting diode package
KR101337599B1 (en) Light emitting diode
KR101146656B1 (en) Optical package and manufacturing method of the same
JP2013229355A (en) Lead frame for led package, led package, and led light emitting element using the same

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant