KR101318969B1 - Light emitting diode - Google Patents

Light emitting diode Download PDF

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Publication number
KR101318969B1
KR101318969B1 KR1020070031608A KR20070031608A KR101318969B1 KR 101318969 B1 KR101318969 B1 KR 101318969B1 KR 1020070031608 A KR1020070031608 A KR 1020070031608A KR 20070031608 A KR20070031608 A KR 20070031608A KR 101318969 B1 KR101318969 B1 KR 101318969B1
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KR
South Korea
Prior art keywords
light emitting
lead terminal
emitting diode
lead
groove
Prior art date
Application number
KR1020070031608A
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Korean (ko)
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KR20080088827A (en
Inventor
이재홍
Original Assignee
서울반도체 주식회사
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Priority to KR1020070031608A priority Critical patent/KR101318969B1/en
Publication of KR20080088827A publication Critical patent/KR20080088827A/en
Application granted granted Critical
Publication of KR101318969B1 publication Critical patent/KR101318969B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Abstract

The present invention relates to a light emitting diode, comprising: a lead frame comprising a first lead terminal, a second lead terminal spaced apart from the first lead terminal, a partition wall portion formed in a circumferential region of the lead frame, and a connection with the partition wall portion There is provided a light emitting diode comprising a reflector composed of a connecting portion formed in a space between the first lead terminal and the second lead terminal and a light emitting chip mounted on any one of the first lead terminal and the second lead terminal.

Light Emitting Diode, Light Emitting Chip, Reflector, Groove, Through Hole

Description

Light emitting diodes

1 is a schematic perspective view of a light emitting diode according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view of the light emitting diode shown in FIG. 1 taken along line II. FIG.

3 is a schematic perspective view of a light emitting diode according to a second embodiment of the present invention.

4 is a cross-sectional view taken along the line II-II of the light emitting diode shown in FIG. 3.

FIG. 5 is a plan view of a lead frame of the light emitting diode shown in FIG. 3.

6 is a schematic perspective view of a light emitting diode according to a third embodiment of the present invention.

7 and 8 are cross-sectional views of the light emitting diode shown in FIG. 6 taken along lines III-III and IV-IV.

FIG. 9 is a plan view of a lead frame of the light emitting diode shown in FIG. 6.

Description of the Related Art [0002]

100: lead frame 110: first lead terminal

120: second lead terminal 130: first groove

140: second groove 150: through hole

200: reflector 210: connection portion

220: partition portion 300: light emitting chip

400: wire 500: molding part

The present invention relates to a light emitting diode, and more particularly, to a light emitting diode having improved light reflection efficiency and heat dissipation performance.

The light emitting diode according to the prior art comprises a body, a lead frame disposed on the body, a light emitting chip mounted on the body or the lead frame, and a reflector formed around the light emitting chip. As such, the heat generated from the light emitting chip of the LED according to the prior art is only emitted through the lead frame disposed on the body, there is a problem that the heat radiation effect is inferior.

SUMMARY OF THE INVENTION The present invention has been made to overcome the above-mentioned conventional problems, and an object of the present invention is to provide a light emitting diode having improved light reflection efficiency and heat emission performance.

According to one embodiment of the present invention, a lead frame comprising a first lead terminal and a second lead terminal spaced apart from the first lead terminal; A connection part formed in a space between the first and second lead terminals; A light emitting chip mounted on any one of the first and second lead terminals; And a molding part encapsulating the light emitting chip, wherein the first and second lead terminals have one sidewall in contact with the connection part, and one sidewall of any one of the first and second lead terminals is provided with a first groove. There is provided a light emitting diode characterized in that the formed.
The first groove may be formed at a lower end of the one side wall.
The barrier rib may be further formed in a circumferential region of the lead frame.
The partition wall part may reflect light emitted from the light emitting chip.
The connection part and the partition wall part may include transparent resin.
The connection part and the partition wall part may include an opaque resin.
The opaque resin may be white including titanium oxide.
The partition wall portion may be formed integrally with the connection portion.
The display device may further include a second groove formed on an upper surface of any one of the first and second lead terminals.
The second groove may be formed in a direction parallel to the direction in which the first groove is formed.
A portion of the partition wall part may be disposed on the second groove.
It may further include a through hole formed in the peripheral area of any one of the first and second lead terminals.
The through hole may be formed in an area overlapping the second groove.
The connection part may be formed on a portion of an upper surface of at least one of the first and second lead terminals.

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Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.

FIG. 1 is a schematic perspective view of a light emitting diode according to a first embodiment of the present invention, and FIG. 2 is a cross-sectional view of the light emitting diode shown in FIG. 1 taken along the line I-I.

1 and 2, the light emitting diode includes a lead frame 100, a reflector 200, a light emitting chip 300, a wire 400, and a molding part 500.

The lead frame 100 includes a first lead terminal 110 and a second lead terminal 120, and the first lead terminal 110 and the second lead terminal 120 are spaced apart from each other by a predetermined interval.

The light emitting chip 300 is mounted on the lead frame 100. That is, the light emitting chip 300 is mounted on the first lead terminal 110 of the lead frame 100 and is electrically connected to the second lead terminal 120 through the wire 400.

In the present embodiment, the light emitting chip 300 is mounted on the first lead terminal 110, but is not limited thereto and may be mounted on the second lead terminal 120.

The light emitting chip 300 is a semiconductor PN junction diode. After the P and N semiconductors are bonded and voltage is applied, holes of the P-type semiconductor are directed toward the N-type semiconductor and gathered in the middle layer. Goes to the P-type semiconductor and gathers in the middle layer, the lowest point of the conduction band. These electrons naturally fall into the holes of the valence band, and at this point, they emit as much energy as the difference in height between the conduction band and the appliance band, that is, the energy gap, which is emitted in the form of light. In addition, various light emitting chips may be used. In addition, the light emitting chip 300 may emit light having various wavelengths. For this purpose, for example, the indium (In) content used as an active layer in a nitride-based light emitting diode may be adjusted, or light having different wavelengths may be used. A light emitting diode emitting light may be combined, or a light emitting chip emitting light of a predetermined wavelength such as ultraviolet light and a phosphor may be used in combination.

The reflector 200 includes a connection part 210 and a partition wall part 220, and the connection part 210 of the reflector 200 serves to connect the first lead terminal 110 and the second lead terminal 120. The barrier rib portion 220 serves to reflect light emitted from the light emitting chip 300 in a predetermined direction.

The connecting portion 210 of the reflector 200 is formed in a space between the first lead terminal 110 and the second lead terminal 120 to interconnect the first lead terminal 110 and the second lead terminal 120. Let's do it. In order to further strengthen the adhesive force between the connecting portion 210 and the first and second lead terminals 110 and 120, one sidewall of the first lead terminal 110 and one sidewall of the first lead terminal 110 are opposed to each other. First grooves 130 are formed on one sidewall of the second lead terminal 120, respectively. As such, when the first grooves 130 are formed, the contact area between the first and second lead terminals 110 and 120 and the connecting portion 210 is increased, thereby improving the adhesive force.

Meanwhile, in the present exemplary embodiment, both the first groove 130 has one sidewall of the first lead terminal 110 and one sidewall of the second lead terminal 120 facing one sidewall of the first lead terminal 110. Although described above, the present invention is not limited thereto and may be formed only in any one of the first lead terminal 110 and the second lead terminal 120. In addition, although the first groove is formed at the lower end of one sidewall of the first and second lead terminals, the present invention is not limited thereto, and the position and shape of the first groove may be variously modified.

The connection part 210 may be formed on a portion of the upper surface of the first lead terminal 110 and a portion of the upper surface of the second lead terminal 120. That is, the connection part 210 may be formed on the remaining areas except for the light emitting chip mounting area of the first lead terminal 110 and the wire bonding area of the second lead terminal 120.

The partition wall part 220 of the reflector 200 is connected to the connection part 210 and is formed at a predetermined height in the circumferential region of the lead frame 100. In this case, the partition wall part 220 and the connection part 210 are integrally formed by, for example, a transfer molding method. In addition, the reflector 200 may be made of an opaque resin or a transparent resin. If the light reflection efficiency is increased and a narrow light directivity is desired, the reflector may be formed of an opaque resin. On the contrary, when a wide light directivity is desired, the reflector may be formed of a transparent resin. In this case, the opaque resin may include a titanium oxide to implement a white reflector, but the material of the reflector is not limited thereto.

The molding part 500 is formed in the reflector 200 to encapsulate the light emitting chip 300. The molding part 500 uses a material such as a transparent resin, for example, a liquid epoxy resin or a silicone resin. In the molding part 500, a phosphor (not shown) that absorbs the light emitted from the light emitting chip 300 and converts the light into wavelengths thereof, or a diffusion agent (not shown) that evenly spreads the light is disposed on the light emitting chip. It may be mixed to locate.

3 is a schematic perspective view of a light emitting diode according to a second exemplary embodiment of the present invention, FIG. 4 is a cross-sectional view of the light emitting diode shown in FIG. 3 taken along the line II-II, and FIG. 5 is the light emitting shown in FIG. Top view of a lead frame of a diode. 3 to 5, the second embodiment of the present invention is different from that of the first embodiment described above, the second groove is additionally formed, the rest of the configuration is almost similar, the following different configuration It will be described in detail mainly.

3 to 5, the light emitting diode includes a lead frame 100, a reflector 200, a light emitting chip 300, a wire 400, and a molding part 500.

The lead frame 100 includes a first lead terminal 110 and a second lead terminal 120, and the first lead terminal 110 and the second lead terminal 120 are spaced apart from each other by a predetermined interval.

First grooves 130 are formed on one sidewall of the first lead terminal 110 and one sidewall of the second lead terminal 120 facing the sidewall of the first lead terminal 110.

In addition, a second groove 140 is formed on one surface of the first lead terminal 110, that is, the upper surface and the one surface of the second lead terminal 120. In this case, the second groove 140 has a V-shaped cross section, but the shape of the cross section of the second groove 140 may be variously modified. In addition, the second groove 140 is formed in a portion of the circumferential region of the first lead terminal 110 and the second lead terminal 120, that is, the second groove 140 is the direction in which the first groove 130 is formed It is formed outside the upper surface of the first lead terminal 110 and the upper surface of the second lead terminal 120 in a direction parallel to the. However, the shape, position and number of the second grooves 140 are not limited thereto and may be variously modified.

The reflector 200 includes a connection part 210 and a partition wall part 220, and the connection part 210 of the reflector 200 is formed in a space between the first lead terminal 110 and the second lead terminal 120. The first lead terminal 110 and the second lead terminal 120 are connected to each other. In addition, the connection part 210 may be formed on a portion of the upper surface of the first lead terminal 110 and a portion of the upper surface of the second lead terminal 120. That is, the connection part 210 may be formed on the remaining areas except for the light emitting chip mounting area of the first lead terminal 110 and the wire bonding area of the second lead terminal 120.

The partition wall part 220 of the reflector 200 is connected to the connection part 210, and the partition wall part 220 is formed at a predetermined height in the circumferential area of the lead frame 100. In this case, the partition wall part 220 and the connection part 210 are integrally formed by, for example, a transfer molding method. In addition, a portion of the partition wall part 220 is disposed on the second groove 140 formed in the first lead terminal 110 and the second lead terminal 120, respectively.

As a result, the first groove 130 formed on one sidewall of the first and second lead terminals 110 and 120 increases the contact area between the first and second lead terminals 110 and 120 and the connecting portion 210. The second groove 140 formed on the upper surfaces of the first and second lead terminals 110 and 120 increases the contact area between the first and second lead terminals 110 and 120 and the partition wall 220. As a result, the adhesion between the lead frame 100 and the reflector 200 is further improved.

6 is a schematic perspective view of a light emitting diode according to a third exemplary embodiment of the present invention, and FIGS. 7 and 8 are cross-sectional views taken along line III-III and IV-IV of the light emitting diode shown in FIG. 9 is a plan view of a lead frame of the light emitting diode shown in FIG. 6. 6 to 9 are different in that the through-holes are additionally formed in comparison with the above-described embodiments, and the rest of the configuration is almost similar. do.

6 to 9, the lead frame 100 includes a first lead terminal 110 and a second lead terminal 120, and the first lead terminal 110 and the second lead terminal 120 are connected to each other. It is arranged at a predetermined interval apart.

First grooves 130 are formed on one sidewall of the first lead terminal 110 and one sidewall of the second lead terminal 120 facing the sidewall of the first lead terminal 110, respectively. Second grooves 140 are formed on one surface of the terminal 110, that is, the upper surface and the one surface of the second lead terminal 120, that is, the upper surface.

In addition, a through hole 150 is formed in the peripheral region of the first lead terminal 110 and the second lead terminal 120. That is, the through hole 150 is formed in an area overlapping the second groove 140 formed in the first lead terminal 110 and the second lead terminal 120. Meanwhile, the formation position of the through hole 150 is not limited thereto, and may be formed on an area other than the second groove 140.

The reflector 200 includes a connection part 210 and a partition wall part 220, and the connection part 210 of the reflector 200 is formed in a space between the first lead terminal 110 and the second lead terminal 120. The first lead terminal 110 and the second lead terminal 120 are connected to each other. In addition, the connection part 210 may be formed on a portion of the upper surface of the first lead terminal 110 and a portion of the upper surface of the second lead terminal 120. That is, the connection part 210 may be formed on the remaining areas except for the light emitting chip mounting area of the first lead terminal 110 and the wire bonding area of the second lead terminal 120.

The partition wall part 220 of the reflector 200 is connected to the connection part 210, and the partition wall part 220 is formed at a predetermined height in the circumferential area of the lead frame 100. In addition, a portion of the partition wall part 220 is disposed on the second groove 140 and the through hole 150 formed in the first lead terminal 110 and the second lead terminal 120, respectively.

As a result, the first groove 130 formed on one sidewall of the first and second lead terminals 110 and 120 increases the contact area between the first and second lead terminals 110 and 120 and the connecting portion 210. The second groove 140 and the through hole 150 formed on the upper surfaces of the first and second lead terminals 110 and 120 may be disposed between the first and second lead terminals 110 and 120 and the partition wall 220. The contact area is increased, and as a result, the adhesion between the lead frame 100 and the reflector 200 is further improved.

What has been described above is merely exemplary embodiments according to the present invention, and the present invention is not limited to the above-described embodiments, and as claimed in the following claims, the present invention may be made without departing from the gist of the present invention. Anyone with ordinary knowledge in the field will have the technical spirit of the present invention to the extent that various modifications can be made.

According to the present invention as described above, by using the entire lead frame as the body of the light emitting diode, it is possible to improve the heat dissipation performance.

In addition, by forming a groove or through-hole on the lead frame, it is possible to improve the adhesive force between the lead frame and the reflector, it is possible to improve the mechanical stability.

Claims (14)

A lead frame including a first lead terminal and a second lead terminal spaced apart from the first lead terminal; A connection part formed in a space between the first and second lead terminals; A light emitting chip mounted on any one of the first and second lead terminals; And A molding part encapsulating the light emitting chip; The first and second lead terminals may have a sidewall contacting the connection portion, and a first groove may be formed on at least one sidewall of the first and second lead terminals. The light emitting diode of claim 1, wherein a second groove is formed in an upper surface of at least one of the first and second lead terminals. The method according to claim 1, The first groove is formed in the lower end of the one side wall. The method according to claim 1, The light emitting diode further comprises a partition wall formed in the peripheral region of the lead frame. The method of claim 3, The barrier rib portion reflects light emitted from the light emitting chip. The method of claim 3, The connecting portion and the partition wall portion comprises a transparent resin. The method of claim 3, The connecting portion and the partition wall light emitting diode, characterized in that containing an opaque resin. The method of claim 6, The opaque resin is a light emitting diode, characterized in that white including titanium oxide. The method of claim 3, The partition wall unit is characterized in that the light emitting diode is formed integrally with the connecting portion. delete The method of claim 3, The second groove is a light emitting diode, characterized in that formed in a direction parallel to the direction in which the first groove is formed. The method of claim 3, A portion of the partition wall portion is disposed on the second groove. The method of claim 3, The light emitting diode of claim 1, further comprising a through hole formed in a peripheral area of at least one of the first and second lead terminals. The method of claim 12, The through hole is formed in the light emitting diode, characterized in that overlapping with the second groove. The method according to claim 1, And the connection part is formed on a portion of an upper surface of at least one of the first and second lead terminals.
KR1020070031608A 2007-03-30 2007-03-30 Light emitting diode KR101318969B1 (en)

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KR1020070031608A KR101318969B1 (en) 2007-03-30 2007-03-30 Light emitting diode

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KR1020120147334A Division KR101337599B1 (en) 2012-12-17 2012-12-17 Light emitting diode

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KR101318969B1 true KR101318969B1 (en) 2013-10-17

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8610156B2 (en) 2009-03-10 2013-12-17 Lg Innotek Co., Ltd. Light emitting device package
TW201128812A (en) 2009-12-01 2011-08-16 Lg Innotek Co Ltd Light emitting device
WO2011122665A1 (en) 2010-03-30 2011-10-06 大日本印刷株式会社 Leadframe or substrate for led, semiconductor device, and method for manufacturing leadframe or substrate for led
US8933548B2 (en) 2010-11-02 2015-01-13 Dai Nippon Printing Co., Ltd. Lead frame for mounting LED elements, lead frame with resin, method for manufacturing semiconductor devices, and lead frame for mounting semiconductor elements
JP5939474B2 (en) * 2014-07-02 2016-06-22 大日本印刷株式会社 Lead frame and manufacturing method thereof, and semiconductor device and manufacturing method thereof
JP7189413B2 (en) * 2017-07-06 2022-12-14 日亜化学工業株式会社 light emitting device
US10707384B2 (en) * 2017-07-06 2020-07-07 Nichia Corporation Light-emitting device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100735325B1 (en) * 2006-04-17 2007-07-04 삼성전기주식회사 Light emitting diode package and fabrication method thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100735325B1 (en) * 2006-04-17 2007-07-04 삼성전기주식회사 Light emitting diode package and fabrication method thereof

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