KR101719641B1 - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
KR101719641B1
KR101719641B1 KR1020100079233A KR20100079233A KR101719641B1 KR 101719641 B1 KR101719641 B1 KR 101719641B1 KR 1020100079233 A KR1020100079233 A KR 1020100079233A KR 20100079233 A KR20100079233 A KR 20100079233A KR 101719641 B1 KR101719641 B1 KR 101719641B1
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KR
South Korea
Prior art keywords
lead frame
led chip
light emitting
emitting device
cutout portion
Prior art date
Application number
KR1020100079233A
Other languages
Korean (ko)
Other versions
KR20120016786A (en
Inventor
한정아
김태광
Original Assignee
서울반도체 주식회사
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Publication date
Application filed by 서울반도체 주식회사 filed Critical 서울반도체 주식회사
Priority to KR1020100079233A priority Critical patent/KR101719641B1/en
Publication of KR20120016786A publication Critical patent/KR20120016786A/en
Application granted granted Critical
Publication of KR101719641B1 publication Critical patent/KR101719641B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)

Abstract

The present invention relates to a light emitting device capable of extending a connection region of a wiring in a lead frame by a cutout portion of an LED chip even if one surface of the lead frame facing each other is a vertical surface.
The LED chip includes a first lead frame, a second lead frame, and at least one LED chip mounted on the first lead frame, wherein the LED chip has a connection region of the wiring for the first lead frame A light emitting device including a cutout portion for extending the light emitting device is provided.

Description

[0001] LIGHT EMITTING DEVICE [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a light emitting device, and more particularly, to a light emitting device capable of extending a connection region of a wiring in a lead frame.

In general, a light emitting device is a device in which electrons and holes meet at a P-N junction (P-N junction) by applying a current and emits light, and is usually fabricated in a package structure in which a light emitting device is mounted.

Referring to FIG. 1, a conventional side light emitting device 1 includes a housing 11 having a lead frame 12 and a plurality of spaced-apart lead frames 11, and a cavity 111. The LED chip 14 is mounted inside the cavity 111 and the first and second wirings W1 and W2 and the light transmitting resin 16 for energizing the LED chip 14 are filled. The translucent resin 16 may contain a fluorescent substance. The housing 11 supports the lead frames 12 and 13 and is injection-molded by the injection molding.

The light emitting device 1 is made by using a PN diode, and operates with directional electrical characteristics. However, damage to the light emitting device 1 may occur due to a reverse current that may be erroneously applied. A zener diode 15 is mounted inside the cavity 111 in order to prevent the light emitting device 1 from being damaged by static electricity. The mounted Zener diode 15 is electrically connected to the LED chip 14 using the third wiring W3.

In the case of the light emitting device 1 in which the Zener diode 15 is mounted together, the Zener diode 15 and the LED chip 14 are electrically connected to any one of the lead frames 12 and 13 It is necessary to secure the wiring bonding space.

2 (a) and 2 (b) are views showing a part of a plane of the light emitting device shown in Fig. 2 (a) has lead frames 12 and 13 of an expanded size in order to secure a bonding space of the zener diode 15. When the size of the lead frames 12 and 13 is extended as shown in FIG. 2 (a), work efficiency and yield of the conventional light emitting device can be changed, and optical loss is generated compared to the conventional light emitting device due to a wider mounting space .

As shown in FIG. 2 (b), the one side surface of the lead frame facing each other is formed in such a shape that a straight line and a diagonal line intersect so that the bonding space of the Zener diode is ensured in a straight line. However, the shape of the lead frame can secure the bonding space of the zener diode, but there is a limitation that the mounting space of the zener diode is narrowed.

SUMMARY OF THE INVENTION An object of the present invention is to provide a light emitting device capable of extending a connection region of a wiring in a lead frame by a cutout portion of an LED chip.

According to an aspect of the present invention, there is provided a light emitting device including a first lead frame, a second lead frame, and at least one LED chip mounted on the first lead frame, And a cutout portion for extending the connection region of the wiring for the first lead frame.

The light emitting device according to an embodiment of the present invention may further include a semiconductor chip mounted on the first lead frame or the second lead frame.

Preferably, the semiconductor chip is a Zener diode, and the Zener diode is mounted on the second lead frame.

According to an embodiment of the present invention, there is provided a light emitting device including: a first wiring connecting a connection region exposed by the semiconductor chip and the cutout portion; And a second wiring electrically connecting the second lead frame and the LED chip.

The cut-out portion may be formed on at least one end of both side ends of the LED chip.

The cut-out portion may be formed in a square shape at a side end portion of the LED chip.

Further, the LED chip according to another embodiment of the present invention includes a first side, a second side opposite to the first side, a bottom surface, and a top surface, wherein the first side, the second side, And the cutout portion extends entirely from the top surface to the bottom surface.

Preferably, the cutout portion is located at at least one end of both ends of the first side surface.

Preferably, the cutout portion is formed in an intermediate portion of the first side surface.

According to the embodiment of the present invention, even if one side of the lead frame facing each other is a vertical surface, the LED chip having the cut-out portion on the side is mounted on the lead frame, thereby securing the wiring connection region in the lead frame. This cut-out portion can reduce the area of the lead frame covered by the LED chip, thereby ensuring both the mounting space and the bonding space of the Zener diode.

According to the embodiment of the present invention, the contact area where the paste covers the side surface of the LED chip is increased by the cutout portion of the LED chip, thereby improving the adhesion of the LED chip.

1 and 2 are views for explaining a conventional light emitting device.
3 is a view for explaining a light emitting device according to an embodiment of the present invention.
FIGS. 4 and 5 are views showing a modification of the LED chip shown in FIG. 3;
6 is a view for explaining a light emitting device according to another embodiment of the present invention.
7 is a view for explaining an LED chip applied to the light emitting device of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the width, length, thickness, and the like of the components may be exaggerated for convenience. Like reference numerals designate like elements throughout the specification.

FIG. 3 is a view for explaining a light emitting device according to an embodiment of the present invention, and FIGS. 4 and 5 are views showing a modified example of the LED chip shown in FIG.

3, the light emitting device 2 according to the embodiment of the present invention includes a first lead frame 22 and a second lead frame 23, an LED chip 24 for emitting light, A wirings W1, W2 and W3 for electrically connecting the LED chip 24 and the semiconductor chip 25 to the lead frames 22 and 23, a Zener diode 25 for protecting the lead frame 24 from the ESD, ). The semiconductor chip 25 may be mounted on the first lead frame 22 or the second lead frame 23 and the semiconductor chip 25 may be mounted on the second lead frame 23 by a zener diode However, the present invention is not limited thereto, and may be an LED chip.

The LED chip 24 is a compound semiconductor laminated structure having a P-N junction structure and utilizes a phenomenon in which light is emitted by recombination of minority carriers (electrons or holes). The LED chip 24 has a cutout portion to increase a connection area of the wiring to the first lead frame 22. [ The exposed space created by the cutout portion of the LED chip 24 can be used as a connection region of the wiring and can be used as a bonding space for bonding the wiring connected to the Zener diode 25 to the first lead frame 22 . The LED chip 24 may be formed with cutouts at both ends of the side surface as shown in FIG. 4, or a cutout may be formed in a square shape at the end of the side surface as shown in FIG.

The cut-out portion may have a shape in which a corner is cut, or a shape that is recessed inward from the side surface, and further, a shape that can reduce the area of the lead frame covered by the LED chip 24 is possible.

The first lead frame 22 and the second lead frame 23 are arranged apart from each other. Even if the first lead frame 22 and the second lead frame 23, which are vertically opposed to each other, are used, the connection area of the wiring can be expanded as the LED chip 24 having the cut-out portion is mounted on the side. The cutout portion of the LED chip 24 not only ensures sufficient bonding space for the zener diode 25 but also enables the mounting of the zener diodes 25 generated in the lead frame structure which is a conventional bent or intersection of a straight line and a diagonal line. The limit can be overcome.

The Zener diode 25 is mounted to protect the LED chip 24 from ESD (Electrostatic Discharge). That is, the zener diode 25 is a semiconductor device that uses a phenomenon in which when a voltage of a relatively large reverse voltage is applied by a semiconductor pn junction or an np junction, a sudden large current begins to flow at a certain voltage and the voltage is kept constant. When applied to the light emitting device 2, the constant voltage can be maintained even when the static electricity or the abrupt current is supplied, and the reliability of the product can be increased.

The LED chip 24 and the zener diode 25 are attached using a paste (not shown) on the first lead frame 22 and the second lead frame 23. The paste may be formed of a non-conductive material or a conductive material, for example, an epoxy resin, a silicone resin or the like may be used as the non-conductive material, and a silver paste may be used as the conductive material. The LED chip 24 may be attached by a non-conductive paste, and the zener diode 25 may be attached by a conductive paste. The LED chip 24 may be attached on the first lead frame 22 and the zener diode 25 may be attached on the second lead frame 23. [ Further, a plurality of LED chips having cut-out portions can be mounted on the first lead frame 22.

Particularly, the LED chip 24 is attached to the first lead frame 22 by paste. As the cutout portion is formed on the side surface of the LED chip 24, the paste is brought into contact with the bottom surface of the LED chip 24 The area of the LED chip 24 can be increased and the adhesion of the LED chip 24 can be improved. The LED chip 24 shown in Figs. 4 and 5 can further improve the adhesiveness than the LED chip 24 shown in Fig.

The wirings W1, W2 and W3 electrically connect the LED chip 24 and the zener diode 25 to the first and second lead frames 22 and 23. The wirings W1, W2, and W3 may be formed of gold (Au) or aluminum (Al) through a wiring bonding process or the like. The first wiring W1 electrically connects the LED chip 24 attached to the first lead frame 22 by the nonconductive paste to the first lead frame 22 and the second wiring W2 And is bonded to a bonding region provided in the second lead frame 23 to electrically connect the LED chip 24 to the first and second lead frames 22 and 23. The third wiring W3 is connected to the connection region of the first lead frame 22 exposed by the cutout portion of the LED chip 24 and is electrically connected to the zener diode 25 mounted on the second lead frame 23 And is electrically connected to the first and second lead frames 22 and 23. At this time, since the Zener diode 25 is electrically connected to the second lead frame 23 by the conductive paste, the additional wiring is not required.

Although not shown in the drawing, an encapsulating portion for encapsulating the LED chip 24 and the Zener diode 25 is further formed. The sealing portion may fix the first to third wires W1, W2 and W3 connected to the LED chip 24 and the zener diode 25. [ Since the encapsulation unit transmits light generated from the LED chip 24 to the outside, it is formed of a transparent resin such as an epoxy resin or a silicone resin, and the encapsulation unit may include a fluorescent material.

6 is a view for explaining a light emitting device according to another embodiment of the present invention.

6, the light emitting device 3 according to another embodiment of the present invention differs from the previous embodiment in that an LED chip 34 having a cutout portion 341 on one side facing the Zener diode 35 .

The Zener diode 35 mounted on the second lead frame 33, which is one vertical surface, is electrically connected to the LED chip 34 by the third wiring W3. As shown in FIG. 6, the third wiring W3 is bonded to the connection region of the first lead frame 32 exposed by the cutout portion 341.

Even if one end of the lead frame facing each other is a vertical surface, the exposed area of the lead frame can be widened by the structure in which the LED chip having the cutout portion is mounted. Therefore, it is possible to sufficiently secure a bonding space for bonding the wirings connected to the zener diode to the first lead frame 32, and sufficient space for mounting the zener diode can be ensured.

7 is a view for explaining an LED chip applied to the light emitting device of the present invention.

Referring to Fig. 7, the LED chip 34 includes a top surface 34a, a bottom surface 34b, a first side surface 34c, and a second side surface 34d opposed to the first side surface 34c.

An electrode is formed on the top surface 34a.

The cutout portion 341 is formed in the direction from the first side surface 34c to the second side surface 34. [ The cutout portion 341 extends entirely from the top surface 34a to the bottom surface 34b.

7 shows the cutout portion 341 formed at the central portion of the first side face 34c, the cutout portion 341 may be formed at either end of the first side face 34c or at either end of either end A cutout portion may be formed.

In a mounting view in which the LED chip 34 having the cutout portion 341 is mounted, for example, a lead frame, a cutout portion 341 of the LED chip 34 is further provided with a wiring connection region in the lead frame And one end of the wiring can be connected to the connection area.

The invention being thus described, it will be obvious that the same way may be varied in many ways. Such modifications are intended to be within the spirit and scope of the invention as defined by the appended claims.

2: light emitting device 22: first lead frame
23: second lead frame 24: LED chip
25: Zener diodes W1, W2, W3: First to third wirings

Claims (9)

A first lead frame and a second lead frame,
At least one LED chip mounted on the first lead frame,
And a semiconductor chip mounted on the second lead frame,
Wherein the LED chip includes a cutout portion for extending a connection region of the wiring for the first lead frame,
And the wiring connected to the semiconductor chip is bonded to the connection region exposed by the cutout portion. delete The method according to claim 1,
Wherein the semiconductor chip is a Zener diode. delete The method according to claim 1,
Wherein the cutout portion is formed on at least one end of both side ends of the LED chip. The method according to claim 1,
Wherein the cutout portion is formed in a square shape at a side end portion of the LED chip. The method according to claim 1,
Wherein the LED chip includes a first side, a second side opposite the first side, a bottom side, and a top side,
Wherein the cutout portion is recessed in a direction toward the second side surface on the first side surface,
Wherein the cutout portion extends entirely from the top surface to the bottom surface. delete The method of claim 7,
Wherein the cut-out portion is formed at an intermediate portion of the first side surface.
KR1020100079233A 2010-08-17 2010-08-17 Light emitting device KR101719641B1 (en)

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Application Number Priority Date Filing Date Title
KR1020100079233A KR101719641B1 (en) 2010-08-17 2010-08-17 Light emitting device

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Application Number Priority Date Filing Date Title
KR1020100079233A KR101719641B1 (en) 2010-08-17 2010-08-17 Light emitting device

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KR20120016786A KR20120016786A (en) 2012-02-27
KR101719641B1 true KR101719641B1 (en) 2017-03-24

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KR102158976B1 (en) * 2018-04-09 2020-09-24 중앙대학교 산학협력단 Micro device array substrate and manufacturing method thereof
KR102279094B1 (en) * 2019-08-05 2021-07-19 중앙대학교 산학협력단 Transfer catridge, and method for arraying micro device using the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100622817B1 (en) * 2005-09-27 2006-09-14 엘지전자 주식회사 High power light emitting diode and fabricating method thereof
JP2007027431A (en) * 2005-07-15 2007-02-01 Toshiba Corp Light emitting device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI284433B (en) * 2006-02-23 2007-07-21 Novalite Optronics Corp Light emitting diode package and fabricating method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007027431A (en) * 2005-07-15 2007-02-01 Toshiba Corp Light emitting device
KR100622817B1 (en) * 2005-09-27 2006-09-14 엘지전자 주식회사 High power light emitting diode and fabricating method thereof

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