KR20110138757A

KR20110138757A - Light emitting device

Info

Publication number: KR20110138757A
Application number: KR1020100058833A
Authority: KR
Inventors: 이창배
Original assignee: 엘지이노텍 주식회사
Priority date: 2010-06-22
Filing date: 2010-06-22
Publication date: 2011-12-28

Abstract

PURPOSE: A light emitting device is provided to form a metal material with high reflectivity on the bottom and the inner surfaces, thereby effectively extracting light emitted from a light emitting chip. CONSTITUTION: An insulating layer(12) is formed on a surface of a body(10). A first roughness layer and a second roughness layer are formed on the insulating layer. A first electrode layer(31) is formed on the first roughness layer. A second electrode layer(32) is formed on the second roughness layer. A light emitting chip(20) is electrically connected to the first and second electrode layers to generate light.

Description

[0001] LIGHT EMITTING DEVICE [0002]

An embodiment relates to a light emitting device.

Light emitting diodes (LEDs) are semiconductor light emitting devices that convert current into light. Recently, the light emitting diode is gradually increasing in brightness, and is being used as a light source for a display, an automotive light source, and an illumination light source. A light emitting diode that emits white light having high efficiency by using a fluorescent material or by combining various color light emitting diodes. It is also possible to implement.

How to improve the light extraction structure to further improve the brightness and performance of the light emitting diode, how to improve the structure of the active layer, how to improve the current spreading, how to improve the structure of the electrode, to improve the structure of the light emitting diode package Various methods, including the method, have been tried.

The embodiment provides a light emitting device, a light emitting device manufacturing method and a light unit having improved light emitting efficiency.

The light emitting device according to the embodiment includes a body; An insulation layer on the body; An electrode layer including a plurality of metal layers on the insulating layer; A roughness layer having a plurality of cluster shapes below or above any one metal layer of the electrode layer; And a light emitting chip disposed on the body and electrically connected to the electrode layer to generate light. The surface of the electrode layer includes an uneven surface formed by the roughness layer.

Method of manufacturing a light emitting device according to the embodiment, forming an insulating layer on the surface of the body; Forming a metal layer on the insulating layer; Heat treating the metal layer to form a roughness layer having a plurality of cluster shapes; Forming an electrode layer on the roughness layer; And disposing a light emitting chip on the electrode layer, wherein the surface of the electrode layer includes an uneven surface formed by the roughness layer.

The embodiment can provide a light emitting device, a light emitting device manufacturing method and a light unit having improved light emitting efficiency.

1 is a side cross-sectional view of a light emitting device according to an embodiment
2 is a diagram illustrating an example of a roughness layer.
3 is a diagram illustrating another example of the roughness layer.
4 to 11 are views for explaining the manufacturing method of the light emitting device of FIG.
12 to 14 show light units using light emitting elements according to embodiments.

In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure is formed "on" or "under" a substrate, each layer The terms " on "and " under " encompass both being formed" directly "or" indirectly " In addition, the criteria for the top or bottom of each layer will be described with reference to the drawings.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not necessarily reflect the actual size.

Hereinafter, a light emitting device and a method of manufacturing the light emitting device according to embodiments will be described with reference to the accompanying drawings.

1 is a side cross-sectional view of a light emitting device 100 according to an embodiment.

Referring to FIG. 1, the light emitting device 100 according to the embodiment may include a body 10, an insulating layer 12 formed on the surface of the body 10, and a first roughness formed on the insulating layer 12. A varnish layer 27 and a second roughness layer 28, at least a first electrode layer 31 formed on the first roughness layer 27, and at least on the second roughness layer 28. And a light emitting chip 20 installed on the second electrode layer 32 and the body 10 and electrically connected to the first electrode layer 31 and the second electrode layer 32 to generate light. have.

The body 10 is a resin material such as polyphthalamide (PPA), silicon (Si), metal material, photo sensitive glass (PSG), sapphire (Al ₂ O ₃ ), printed circuit board (PCB), ceramic It may be formed of at least one of the materials. However, in the embodiment will be described based on the body 10 is formed of a silicon (Si) material.

A cavity 15 may be formed in the body 10 to open the upper portion thereof. The cavity 15 may be formed in a cup shape, a concave container shape, or the like, and the inner surface of the cavity 15 may be a side perpendicular to the bottom surface or an inclined side surface. A metal material having high reflectivity is formed on the bottom surface and the inner surface of the cavity 15 to effectively extract the light emitted from the light emitting chip 20 to the outside.

In addition, the outer surface of the body 10 may be formed to be inclined. When the body 10 is formed of a silicon (Si) material in the process of classifying or separating the plurality of connected bodies 10 into individual device units by an etching process, according to the etching process on the outer surface of the body 10 An inclined surface may be formed.

The insulating layer 12 may be formed on the surface of the body 10. When the body 10 is formed of an electrically conductive material including a silicon (Si) material, the insulating layer 12 is formed on the surface of the body 10 so that the body 10 is the first and second electrode layers The electrical short with (31, 32) can be prevented.

At least one material of the insulating layer 12 may be selected from, for example, Si0 ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , and the like. It may be formed, preferably silicon oxide (SiO ₂ , Si _x O _y ), but is not limited thereto.

When the body 10 is formed of silicon (Si) material, the insulating layer 12 may be formed in the form of a silicon oxide film by a thermal oxidation method. Alternatively, the insulating layer 12 may be formed by being deposited by a method such as sputtering, plasma enhanced chemical vapor deposition (PECVD), or electron beam (E-beam) deposition, but is not limited thereto.

The first roughness layer 27 and the second roughness layer 28 may be formed on the insulating layer 12. The first roughness layer 27 and the second roughness layer 28 may include a metal material. For example, the metal material may be formed of silver (Ag).

The first and second cluster layers 27 and 28 may be formed in a plurality of cluster shapes, irregular clusters may be formed continuously or discontinuously, and adjacent clusters may be connected to each other, but the present invention is not limited thereto. In addition, the first and second roughness layers 27 and 28 may be formed in a random shape at irregular intervals.

First and second electrode layers 31 and 32 are formed on the first and second cluster layers 27 and 28, and the first and second electrode layers 31 and 32 are formed of the first and second roughness. Layers 27 and 28 may be transferred to form a rough surface.

The first and second electrode layers 31 and 32 may be formed on the insulating layer 12 as well as the first and second roughness layers 27 and 28. The first and second electrode layers 31 and 32 may be opened above and below the body, respectively, and the upper surface of the region where the first and second roughness layers 27 and 28 are not formed may be formed flat. Can be.

The first electrode layer 31 and the second electrode layer 32 are spaced apart from each other so as to be electrically separated from each other and provided on the insulating layer 12. The first electrode layer 31 and the second electrode layer 32 may be electrically connected to the light emitting chip 20 to supply power to the light emitting chip 20.

The first and second electrode layers 31 and 32 may be formed of a metal material, for example, titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), It may include at least one of platinum (Pt), tin (Sn), silver (Ag) or phosphorus (P).

In addition, the first and second electrode layers 31 and 32 may be formed to have a single layer or a multilayer structure. In this case, in particular, the uppermost layer of the first and second electrode layers 31 and 32 may be formed of a material having a high reflectance, for example, a metal or an alloy material including at least one of Ag, Al, Pd, Pt, or Cu to emit light. It is desirable to effectively reflect the light emitted from the chip 20. The first and second electrode layers 31 and 32 may include Cr / Au / Cu / Ni / Au, Cr / Cu / Cu / Ni / Au, Ti / Au / Cu / Ni / Au, Ta / Cu / Cu / Ni / Au, Ta / Ti / Cu / Cu / Ni / Au and the like can be selectively used. Surface roughness of the first and second electrode layers 31 and 32 may be formed to be 1nm ~ 50nm. In addition, the region in which the light emitting chip 20 is mounted and the region other than the light emitting chip 20 may be formed of the same metal or a different metal. Other areas may be formed of a material with good reflection.

The first and second roughness layers 27 and 28 may be transferred to the first electrode layer 31 and the second electrode layer 32 to form concave-convex surfaces 31a and 32a.

The uneven surfaces 31a and 32a may have a random uneven structure and may increase the amount of light extracted to the outside by scattering light emitted from the light emitting chip 20. That is, the uneven surfaces 31a and 32a may reflect incident light at various angles due to scattering effects, thereby improving luminous efficiency of the light emitting device 100 according to the embodiment.

The light emitting chip 20 may be installed on any one of the body 10, the first electrode layer 31, and the second electrode layer 32. For example, the light emitting chip 20 may be disposed as illustrated. ) May be installed on the chip bonding pad 22. The light emitting chip 20 may be electrically connected to the first and second electrode layers 31 and 32 to generate power by receiving power.

The light emitting chip 20 may include, for example, at least one light emitting diode (LED), and the light emitting diode may be formed of a visible ray series emitting light such as red, green, blue, and white light. At least one of a light emitting diode and an ultraviolet (UltraViolet) light emitting diode emitting ultraviolet rays may be, but is not limited thereto.

As illustrated, the light emitting chip 20 may be electrically connected to the first and second electrode layers 31 and 32 by wire bonding, or may be flip chip or die bonding. In some embodiments, the first and second electrode layers 31 and 32 may be electrically connected to each other.

An encapsulant 40 may be formed in the body 10 to seal and protect the light emitting chip 20. In FIG. 1, although the encapsulant 40 is formed in the cavity 15 of the body 10 to seal the light emitting chip 20, the present invention is not limited thereto.

The encapsulant 40 may be formed of a silicon or resin material, and the encapsulant 40 may include a phosphor. The phosphor may change the wavelength of light emitted from the light emitting chip 20. For example, when the light emitting chip 20 is a blue light emitting diode and the phosphor is a yellow phosphor, the yellow phosphor may be excited by blue light to emit yellow light, and the blue light and yellow light are mixed. Accordingly, the light emitting device 100 may provide white light. However, this is not limitative.

On the other hand, a lens 50 is further formed on the encapsulant 40 to adjust light distribution of light emitted from the light emitting device 100. In addition, a Zener diode may be further installed on the body 10 to improve the breakdown voltage.

2 shows an example of the roughness layers 27 and 28.

As shown in FIG. 2, a plurality of roughness layers 27 and 28 spaced apart from each other are formed on the insulating layer 12, and the roughness layers 27 and 28 are formed by a cluster or agglomeration by a cohesive action. It can be formed into). The roughness layers 27 and 28 formed by this coagulation action may be formed in a continuous or discontinuous shape instead of a continuous layer shape. The roughness layers 27 and 28 may have clusters having random shapes and sizes on the insulating layer 12 at random intervals. The roughness layers 27 and 28 may be defined as structures in which Ag clusters are formed.

In addition, electrode layers 31 and 32 are formed on the roughness layers 27 and 28, and the roughness layers 27 and 28 are transferred to the electrode layers 31 and 32 to form a random size and shape. It may be formed of the uneven surface (31a, 32a). The uneven surfaces 31a and 32a may include an uneven structure having a random size and shape formed on the surfaces of the electrode layers 31 and 32.

The roughness layers 27 and 28 may be formed between the layers of the electrode layers 31 and 32 or on the electrode layers 31 and 32 and not on the insulating layer 12. The electrode layers 31 and 32 may include the roughness layers 27 and 28 or may be defined as separate structures.

3 is a diagram illustrating an example in which a roughness layer is disposed between electrode layers.

Referring to FIG. 3, the roughness layers 27 and 28 may be formed on the metal layer 33, and the metal layer 33 may include at least one of a seed layer, a conductive layer, or an adhesive layer.

The metal layer 33 is formed to be open like an electrode layer structure, and includes titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), and platinum (Pt). , Tin (Sn), silver (Ag), or phosphorus (P).

In addition, when the electrode layers 31 and 32 have a multilayer structure, roughness layers 27 and 28 may be included on the metal layer 33 and the metal layer 33.

The uppermost layers of the electrode layers 31 and 32 are formed of a material having a high reflectance, for example, a metal or an alloy material including at least one of Ag, Al, Pd, Pt, or Cu, and are emitted from the light emitting chip 20. It is desirable to reflect light effectively. The first and second electrode layers 31 and 32 may be Au / Cu / Ni / Au, Cu / Cu / Ni / Au, Au / Cu / Ni / Au, Cu / Cu / Ni / Au, Ti / Cu / Cu It may be selected from a laminated structure, such as / Ni / Au.

The metal layer 33 of the electrode layers 31 and 32 may be formed as a seed layer, and the seed layer may be formed as a single layer or a multilayer, and the materials may include titanium (Ti), chromium (Cr), and tantalum (Ta). And the like, and may be formed to a thickness of about 900Å ± 200Å. In the case of the multilayer, the seed layer may have a structure such as Cr / Au, Cr / Cu, Ti / Au, Ta / Cu, Ta / Ti / Cu, or the like.

In addition, the metal layer 33 may further include a metal layer different from the seed layer, and the other metal layer may include, for example, a buffer layer and / or a barrier layer, and the buffer layer may be copper (Cu) or aluminum (Al). , Silver (Ag), gold (Au), and the like, and the barrier layer may be formed by a plating method using platinum (Pt), nickel (Ni), or the like.

The roughness layers 27 and 28 may be formed on the metal layer 33 as described above, and the electrode layers 31 and 32 may be formed on the roughness layers 27 and 28, and the electrode layers 31 and 32 may be formed. The surface of the surface may be formed of rough uneven surfaces 31a and 32a.

The electrode layers 31 and 32 may optionally include a buffer layer, a barrier layer, a bonding layer, an adhesive layer, and a reflective layer, and the buffer layer and the barrier layer may be formed of the above-described materials. The bonding layer includes Au, and the adhesive layer is formed for bonding between two adjacent metal layers, and may be used as titanium (Ti), chromium (Cr), tantalum (Ta), and the like. Can be. The reflective layer may use a metal or an alloy having excellent reflectivity, for example, aluminum (Al) or silver (Ag), or an alloy optionally including these, for reflecting light.

The bonding layer may be disposed in a bonding area under the light emitting chip, and the reflective layer may be disposed around a cavity, but is not limited thereto.

Hereinafter, a method of manufacturing the light emitting device 100 according to the embodiment will be described. However, the description overlapping with the above description will be omitted or briefly described.

4 to 11 illustrate a method of manufacturing the light emitting device 100 of FIG. 1.

4 and 5, the body 10 in which the cavity 15 is formed may be prepared, and the insulating layer 12 may be formed on the body 10.

The body 10 may be an etching process, and may be etched using a bulk etching method. The etching method may include a wet etching method, a dry etching method, a laser drilling method, or the like. It may be used, or two or more of the above methods may be used together. A typical method of the dry etching method is a deep reactive ion etching method.

When the body 10 is formed of silicon (Si), the insulating layer 12 may be formed in the form of a silicon oxide film by a thermal oxidation method. Alternatively, the insulating layer 12 may be formed by being deposited by a method such as sputtering, plasma enhanced chemical vapor deposition (PECVD), or electron beam (E-beam) deposition, but is not limited thereto.

6 and 7, the base metal layer 28a is formed on the insulating layer 12, and the base metal layer 28a is a silver (Ag) thin film and may be formed to have a thickness of 20 nm to several μm. Can be. The silver thin film may be deposited and formed by a method such as sputtering, plasma enhanced chemical vapor deposition (PECVD), and electron beam (E-beam) deposition, but is not limited thereto.

The base metal layer 28a is performed at a predetermined temperature, for example, in the range of 400 ° C to 700 ° C, and the temperature is heat treated to a temperature at which the silver material does not burn. Here, the silver thin films are each separated from the thin film during the rapid heat treatment in a vacuum condition of 400 ℃.

The silver thin film is formed into a layer as shown in (a) of FIG. 11, and then heat treated at 500 ° C. for 1 minute as shown in (b) to be separated into clusters having a random shape and size, and as shown in (c), 650 ° C. After 60 minutes of treatment, heat treatment can be performed to form clusters with random shapes and sizes. Here, the interval between the roughness may be spaced about 20 ~ 300nm, it is not limited thereto.

As shown in FIG. 7, the rough knee layers 27 and 28 are formed and then electrically opened to separate the first and second roughness layers 27 and 28, or the open regions when the base metal layer is formed. can do.

The rough knee layers 27 and 28 illustrated in FIG. 7 may be discontinuously formed as shown in FIG. 2 or 3, or adjacent clusters may be connected to each other. As another example, the roughness layers 27 and 28 may be formed after forming another metal layer on the insulating layer 12, and thus may be formed on the lower, middle, and uppermost portions of the electrode layer. It doesn't.

FIG. 8 shows first and second electrode layers 31 and 32 formed on the first and second roughness layers 27 and 28, and the first electrode layer 31 and the second electrode layer 32 are plated. Or it may be formed of a single layer or a multi-layer metal layer through a deposition method. The metal materials of the first and second metal layers 31 and 32 are not limited.

Surfaces of the first and second electrode layers 31 and 32 may be formed on the uneven surfaces 31a and 32a by transferring the structures of the first and second roughness layers 27 and 28. The uneven surfaces 31a and 32a reflect and scatter light incident on the first and second electrode layers 31 and 32, thereby contributing to the improvement of light emission efficiency of the light emitting device according to the embodiment.

The first and second roughness layers 27 and 28 may be formed on an area that can substantially reflect light, for example, a bottom surface and a side surface of the cavity 15, or may be formed on an outer upper surface of the body 10. But it is not limited thereto.

Referring to FIG. 9, the light emitting chip 20 may be installed on any one of the body 10, the first electrode layer 31, and the second electrode layer 32. The light emitting chip 20 may be electrically connected to the first and second electrode layers 31 and 32.

For example, as illustrated, the light emitting chip 20 may be installed on the chip bonding pad 22. In this case, the chip bonding pad 22 may be, for example, an adhesive including a resin material, or an adhesive force. It may be a conductive adhesive containing such a good metal material.

Referring to FIG. 10, the light emitting device 100 according to the embodiment may be provided by forming the encapsulant 40 to seal the light emitting chip 20 on the body 10.

In addition, the lens 50 may be further formed on the body 10 and the encapsulant 40.

The roughness layer of the embodiment has been described as an example formed of one layer, but may be formed on different layers, respectively.

The light emitting device according to the embodiment may be applied to the light unit. The light unit includes a structure in which a plurality of light emitting elements are arranged, and includes a display device illustrated in FIGS. 12 and 13 and a lighting device illustrated in FIG. 14, and may include a lighting lamp, a traffic light, a vehicle headlamp, an electronic signboard, and the like. have.

12 is an exploded perspective view of a display device according to an exemplary embodiment.

Referring to FIG. 12, the display device 1000 according to the embodiment includes a light guide plate 1041, a light emitting module 1031 providing light to the light guide plate 1041, and a reflective member 1022 under the light guide plate 1041. ), An optical sheet 1051 on the light guide plate 1041, a display panel 1061, a light guide plate 1041, a light emitting module 1031, and a reflective member 1022 on the optical sheet 1051. The bottom cover 1011 may be included, but is not limited thereto.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 diffuses light to serve as a surface light source. The light guide plate 1041 is made of a transparent material, for example, acrylic resin-based such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN). It may include one of the resins.

The light emitting module 1031 provides light to at least one side of the light guide plate 1041, and ultimately serves as a light source of the display device.

The light emitting module 1031 may include at least one, and may provide light directly or indirectly at one side of the light guide plate 1041. The light emitting module 1031 may include a substrate 1033 and a light emitting device 100 according to the exemplary embodiment disclosed above, and the light emitting device 100 may be arranged on the substrate 1033 at predetermined intervals.

The substrate 1033 may be a printed circuit board (PCB) including a circuit pattern (not shown). However, the substrate 1033 may include not only a general PCB but also a metal core PCB (MCPCB, Metal Core PCB), a flexible PCB (FPCB, Flexible PCB) and the like, but is not limited thereto. When the light emitting device 100 is mounted on the side surface of the bottom cover 1011 or the heat dissipation plate, the substrate 1033 may be removed. Here, a part of the heat dissipation plate may contact the upper surface of the bottom cover 1011.

In addition, the plurality of light emitting devices 100 may be mounted on the substrate 1033 such that an emission surface from which light is emitted is spaced apart from the light guide plate 1041 by a predetermined distance, but is not limited thereto. The light emitting device 100 may directly or indirectly provide light to a light incident portion, which is one side of the light guide plate 1041, but is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflective member 1022 may improve the luminance of the light unit 1050 by reflecting light incident to the lower surface of the light guide plate 1041 and pointing upward. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be combined with the top cover, but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, and includes a first and second substrates of transparent materials facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 displays information by light passing through the optical sheet 1051. The display device 1000 may be applied to various portable terminals, monitors of notebook computers, monitors of laptop computers, televisions, and the like.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light transmissive sheet. The optical sheet 1051 may include at least one of a sheet such as, for example, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The diffusion sheet diffuses the incident light, the horizontal and / or vertical prism sheet focuses the incident light into the display area, and the brightness enhancement sheet reuses the lost light to improve the brightness. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

Here, the light guide plate 1041 and the optical sheet 1051 may be included as an optical member on the optical path of the light emitting module 1031, but are not limited thereto.

13 is a diagram illustrating a display device according to an exemplary embodiment.

Referring to FIG. 13, the display device 1100 includes a bottom cover 1152, a substrate 1120 on which the light emitting device 100 disclosed above is arranged, an optical member 1154, and a display panel 1155.

The substrate 1120 and the light emitting device 100 may be defined as a light emitting module 1060. The bottom cover 1152, at least one light emitting module 1060, and the optical member 1154 may be defined as a light unit.

The bottom cover 1152 may include an accommodating part 1153, but is not limited thereto.

Here, the optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, horizontal and vertical prism sheets, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a poly methy methacrylate (PMMA) material, and the light guide plate may be removed. The diffusion sheet diffuses the incident light, the horizontal and vertical prism sheets focus the incident light onto the display area, and the brightness enhancement sheet reuses the lost light to improve the brightness.

The optical member 1154 is disposed on the light emitting module 1060, and performs surface light source, diffusion, condensing, etc. of the light emitted from the light emitting module 1060.

14 is a perspective view of a lighting apparatus according to an embodiment.

Referring to FIG. 14, the lighting device 1500 may include a case 1510, a light emitting module 1530 installed in the case 1510, and a connection terminal installed in the case 1510 and receiving power from an external power source. 1520).

The case 1510 may be formed of a material having good heat dissipation, for example, may be formed of a metal material or a resin material.

The light emitting module 1530 may include a substrate 1532 and a light emitting device 100 according to an embodiment mounted on the substrate 1532. The plurality of light emitting devices 100 may be arranged in a matrix form or spaced apart at predetermined intervals.

The substrate 1532 may be a circuit pattern printed on an insulator. For example, a general printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, FR-4 substrates and the like.

In addition, the substrate 1532 may be formed of a material that reflects light efficiently, or a surface may be coated with a color, for example, white or silver, in which the light is efficiently reflected.

At least one light emitting device 100 may be mounted on the substrate 1532. Each of the light emitting devices 100 may include at least one light emitting diode (LED) chip. The LED chip may include a colored light emitting diode emitting red, green, blue or white colored light, and a UV emitting diode emitting ultraviolet (UV) light.

The light emitting module 1530 may be disposed to have a combination of various light emitting devices 100 to obtain color and luminance. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be combined to secure high color rendering (CRI).

The connection terminal 1520 may be electrically connected to the light emitting module 1530 to supply power. The connection terminal 1520 is inserted into and coupled to an external power source in a socket manner, but is not limited thereto. For example, the connection terminal 1520 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by a wire.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

In addition, the above description has been made with reference to the embodiment, which is merely an example, and is not intended to limit the present invention. Those skilled in the art to which the present invention pertains will be illustrated as above without departing from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

100 light emitting element 10 body
12: insulation layer 27, 28: roughness layer
20: light emitting chip 31,32: electrode layer
31a, 32a: uneven surface 40: encapsulant
50: Lens

Claims

Body;
An insulation layer on the body;
An electrode layer including a plurality of metal layers on the insulating layer;
A roughness layer having a plurality of cluster shapes below or above any one metal layer of the electrode layer; And
A light emitting chip disposed on the body and electrically connected to the electrode layer to generate light;
The surface of the electrode layer comprises a concave-convex surface formed by the roughness layer.

The light emitting device of claim 1, wherein the roughness layer comprises silver (Ag).

The light emitting device of claim 2, wherein the roughness layer is disposed between the insulating layer and the electrode layer.

The light emitting device of claim 2, wherein the roughness layer is disposed in the metal layer.

The method of claim 2 or 4, wherein the electrode layer is titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin A light emitting device comprising at least one of (Sn), silver (Ag) or phosphorus (P).

The method of claim 1, wherein the electrode layer comprises a first and a second electrode layer,
The roughness layer may include a first roughness layer corresponding to the uneven surface of the first electrode layer; And a second roughness layer corresponding to the uneven surface of the second electrode layer.

The light emitting device of any one of claims 1 to 4, wherein the body includes a cavity formed to open at an upper portion thereof, and the roughness layer is formed on a bottom surface and a side surface of the cavity.

The method of claim 7, wherein
Light emitting device comprising an encapsulant for sealing the light emitting chip on the body.

8. The light emitting device of claim 7, wherein the plurality of clusters include irregular intervals and sizes.