KR20110126752A - 하이드록시플루오로알칸술핀산암모늄염의 제조 방법, 하이드록시플루오로알칸술폰산암모늄염의 제조 방법, 플루오로알칸술폰산오늄염의 제조 방법, 하이드록시플루오로알칸술핀산암모늄염 및 하이드록시플루오로알칸술폰산암모늄염 - Google Patents

하이드록시플루오로알칸술핀산암모늄염의 제조 방법, 하이드록시플루오로알칸술폰산암모늄염의 제조 방법, 플루오로알칸술폰산오늄염의 제조 방법, 하이드록시플루오로알칸술핀산암모늄염 및 하이드록시플루오로알칸술폰산암모늄염 Download PDF

Info

Publication number
KR20110126752A
KR20110126752A KR1020117023807A KR20117023807A KR20110126752A KR 20110126752 A KR20110126752 A KR 20110126752A KR 1020117023807 A KR1020117023807 A KR 1020117023807A KR 20117023807 A KR20117023807 A KR 20117023807A KR 20110126752 A KR20110126752 A KR 20110126752A
Authority
KR
South Korea
Prior art keywords
group
general formula
formula
represented
salt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020117023807A
Other languages
English (en)
Korean (ko)
Inventor
마사시 나가모리
유지 하기와라
다카시 마스부치
사토루 나리즈카
Original Assignee
샌트랄 글래스 컴퍼니 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 샌트랄 글래스 컴퍼니 리미티드 filed Critical 샌트랄 글래스 컴퍼니 리미티드
Publication of KR20110126752A publication Critical patent/KR20110126752A/ko
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C303/00—Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides
    • C07C303/32—Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides of salts of sulfonic acids
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C07C309/07—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton
    • C07C309/08—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing hydroxy groups bound to the carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C07C309/07—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton
    • C07C309/12—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C313/00—Sulfinic acids; Sulfenic acids; Halides, esters or anhydrides thereof; Amides of sulfinic or sulfenic acids, i.e. compounds having singly-bound oxygen atoms of sulfinic or sulfenic groups replaced by nitrogen atoms, not being part of nitro or nitroso groups
    • C07C313/02—Sulfinic acids; Derivatives thereof
    • C07C313/04—Sulfinic acids; Esters thereof
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
KR1020117023807A 2009-03-13 2010-03-12 하이드록시플루오로알칸술핀산암모늄염의 제조 방법, 하이드록시플루오로알칸술폰산암모늄염의 제조 방법, 플루오로알칸술폰산오늄염의 제조 방법, 하이드록시플루오로알칸술핀산암모늄염 및 하이드록시플루오로알칸술폰산암모늄염 Ceased KR20110126752A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2009-061240 2009-03-13
JP2009061240 2009-03-13
JP2010054089A JP5549289B2 (ja) 2009-03-13 2010-03-11 フルオロアルカンスルホン酸アンモニウム塩類およびその製造方法
JPJP-P-2010-054089 2010-03-11

Publications (1)

Publication Number Publication Date
KR20110126752A true KR20110126752A (ko) 2011-11-23

Family

ID=42728463

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117023807A Ceased KR20110126752A (ko) 2009-03-13 2010-03-12 하이드록시플루오로알칸술핀산암모늄염의 제조 방법, 하이드록시플루오로알칸술폰산암모늄염의 제조 방법, 플루오로알칸술폰산오늄염의 제조 방법, 하이드록시플루오로알칸술핀산암모늄염 및 하이드록시플루오로알칸술폰산암모늄염

Country Status (4)

Country Link
US (1) US9024058B2 (https=)
JP (1) JP5549289B2 (https=)
KR (1) KR20110126752A (https=)
WO (1) WO2010104178A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101723012B1 (ko) 2016-04-29 2017-04-04 인하대학교 산학협력단 셀룰로오스 나노섬유를 포함하는 미세조류 응집제 및 이를 이용한 미세조류 회수 및 지질 함량 증대 방법

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3480508B2 (ja) 1994-02-03 2003-12-22 株式会社岡部ロック 箱製函装置
TWI525066B (zh) * 2011-04-13 2016-03-11 住友化學股份有限公司 鹽、光阻組成物及製備光阻圖案之方法
JP6019849B2 (ja) * 2011-09-08 2016-11-02 セントラル硝子株式会社 含フッ素スルホン酸塩類、含フッ素スルホン酸塩樹脂、レジスト組成物及びそれを用いたパターン形成方法
JP5615860B2 (ja) * 2012-03-07 2014-10-29 信越化学工業株式会社 酸発生剤、化学増幅型レジスト材料、及びパターン形成方法
JP6037689B2 (ja) * 2012-07-10 2016-12-07 東京応化工業株式会社 アンモニウム塩化合物の製造方法、及び酸発生剤の製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4150509B2 (ja) 2000-11-20 2008-09-17 富士フイルム株式会社 ポジ型感光性組成物
US6749987B2 (en) 2000-10-20 2004-06-15 Fuji Photo Film Co., Ltd. Positive photosensitive composition
JP2004004561A (ja) 2002-02-19 2004-01-08 Sumitomo Chem Co Ltd ポジ型レジスト組成物
TWI314250B (en) 2002-02-19 2009-09-01 Sumitomo Chemical Co Positive resist composition
JP4103523B2 (ja) 2002-09-27 2008-06-18 Ｊｓｒ株式会社 レジスト組成物
JP4794835B2 (ja) * 2004-08-03 2011-10-19 東京応化工業株式会社 高分子化合物、酸発生剤、ポジ型レジスト組成物、およびレジストパターン形成方法
JP4816921B2 (ja) 2005-04-06 2011-11-16 信越化学工業株式会社 新規スルホン酸塩及びその誘導体、光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法
TWI332122B (en) 2005-04-06 2010-10-21 Shinetsu Chemical Co Novel sulfonate salts and derivatives, photoacid generators, resist compositions and patterning process
EP1897869A4 (en) * 2005-05-11 2010-05-05 Jsr Corp NOVEL COMPOUND, NOVEL POLYMER, AND NOVEL RADIATION SENSITIVE RESIN COMPOSITION
JP5124805B2 (ja) 2006-06-27 2013-01-23 信越化学工業株式会社 光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法
JP5124806B2 (ja) * 2006-06-27 2013-01-23 信越化学工業株式会社 光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法
US8361691B2 (en) * 2006-09-08 2013-01-29 Jsr Corporation Radiation-sensitive composition and process for producing low-molecular compound for use therein
US7956142B2 (en) 2006-11-10 2011-06-07 Jsr Corporation Polymerizable sulfonic acid onium salt and resin
KR20110133065A (ko) 2007-02-15 2011-12-09 샌트랄 글래스 컴퍼니 리미티드 광산발생제용 화합물 및 이를 사용한 레지스트 조성물, 패턴 형성방법
TWI438182B (zh) * 2007-07-25 2014-05-21 Sumitomo Chemical Co 適用於酸產生劑之鹽以及含有該鹽之化學放大正型抗蝕劑組成物

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101723012B1 (ko) 2016-04-29 2017-04-04 인하대학교 산학협력단 셀룰로오스 나노섬유를 포함하는 미세조류 응집제 및 이를 이용한 미세조류 회수 및 지질 함량 증대 방법

Also Published As

Publication number Publication date
US20120004447A1 (en) 2012-01-05
JP5549289B2 (ja) 2014-07-16
JP2010235601A (ja) 2010-10-21
US9024058B2 (en) 2015-05-05
WO2010104178A1 (ja) 2010-09-16

Similar Documents

Publication Publication Date Title
KR101234680B1 (ko) 2-(알킬카르보닐옥시)-1,1-디플루오르에탄술폰산염류 및 그 제조방법
KR101430058B1 (ko) 함불소 술폰산염 수지, 레지스트 조성물, 패턴 형성 방법, 중합성 함불소 술폰산염, 중합성 함불소 술폰산 및 중합성 함불소 술폰산오늄염의 제조 방법
KR20110126752A (ko) 하이드록시플루오로알칸술핀산암모늄염의 제조 방법, 하이드록시플루오로알칸술폰산암모늄염의 제조 방법, 플루오로알칸술폰산오늄염의 제조 방법, 하이드록시플루오로알칸술핀산암모늄염 및 하이드록시플루오로알칸술폰산암모늄염
JP5145776B2 (ja) 新規スルホン酸塩、スルホン酸オニウム塩及びスルホン酸誘導体とその製造方法
JP5151389B2 (ja) アルコキシカルボニルフルオロアルカンスルホン酸塩類の製造方法
JP5549288B2 (ja) フルオロアルカンスルホン酸アンモニウム塩類およびその製造方法
US7414148B2 (en) Process for producing alkoxycarbonylfluoroalkanesulfonates
KR101425133B1 (ko) 알콕시카르보닐플루오로알칸술폰산염류의 제조 방법

Legal Events

Date Code Title Description
A201 Request for examination
AMND Amendment
PA0105 International application

Patent event date: 20111010

Patent event code: PA01051R01D

Comment text: International Patent Application

PA0201 Request for examination
AMND Amendment
PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20121220

Patent event code: PE09021S01D

AMND Amendment
E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20130621

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20121220

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

AMND Amendment
PX0901 Re-examination

Patent event code: PX09011S01I

Patent event date: 20130621

Comment text: Decision to Refuse Application

Patent event code: PX09012R01I

Patent event date: 20130220

Comment text: Amendment to Specification, etc.

Patent event code: PX09012R01I

Patent event date: 20111117

Comment text: Amendment to Specification, etc.

Patent event code: PX09012R01I

Patent event date: 20111010

Comment text: Amendment to Specification, etc.

PX0601 Decision of rejection after re-examination

Comment text: Decision to Refuse Application

Patent event code: PX06014S01D

Patent event date: 20131010

Comment text: Amendment to Specification, etc.

Patent event code: PX06012R01I

Patent event date: 20130924

Comment text: Decision to Refuse Application

Patent event code: PX06011S01I

Patent event date: 20130621

Comment text: Amendment to Specification, etc.

Patent event code: PX06012R01I

Patent event date: 20130220

Comment text: Notification of reason for refusal

Patent event code: PX06013S01I

Patent event date: 20121220

Comment text: Amendment to Specification, etc.

Patent event code: PX06012R01I

Patent event date: 20111117

Comment text: Amendment to Specification, etc.

Patent event code: PX06012R01I

Patent event date: 20111010