KR20110096315A - Optical element device and fabricating method thereof - Google Patents

Optical element device and fabricating method thereof Download PDF

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Publication number
KR20110096315A
KR20110096315A KR1020100015692A KR20100015692A KR20110096315A KR 20110096315 A KR20110096315 A KR 20110096315A KR 1020100015692 A KR1020100015692 A KR 1020100015692A KR 20100015692 A KR20100015692 A KR 20100015692A KR 20110096315 A KR20110096315 A KR 20110096315A
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KR
South Korea
Prior art keywords
substrate
base material
optical element
optical device
insulating layer
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KR1020100015692A
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Korean (ko)
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KR101124254B1 (en
Inventor
남기명
송태환
전영철
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(주)포인트엔지니어링
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Priority to KR1020100015692A priority Critical patent/KR101124254B1/en
Publication of KR20110096315A publication Critical patent/KR20110096315A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector

Abstract

The present invention discloses an optical element device capable of easily dissipating heat and preventing a short circuit between electrodes, and a method of manufacturing the same.
For example, a substrate including a first substrate, an insulating layer formed to surround the first substrate, and a second substrate formed to surround the insulating layer, an optical element formed on the first substrate; Disclosed is an optical device comprising a conductive wire electrically connecting the second substrate and the optical device, and a protective layer formed to surround the optical device and the conductive wire.

Description

Optical device device and manufacturing method thereof

The present invention relates to an optical device and a method of manufacturing the same.

Optical devices refer to devices that generate light by receiving an electrical signal. Such optical devices are used in various fields, and among them, research of optical devices is being actively conducted as the display field grows gradually.

Among the optical devices, light emitting diodes (LEDs) are rapidly increasing in use because they can generate light with high efficiency and high luminance compared to conventional photons.

Such light emitting diodes generate light by a combination of electrons and holes, which inevitably generate heat in addition to light. If the heat of the light emitting diode is not dissipated, there is a risk of device damage and operation efficiency is lowered.

In addition, in the case of packaging a light emitting diode to form a device, when the electrodes formed on the substrate are short-circuited, the light emitting diode is broken, which also causes a problem of reliability. Therefore, there is a need for a structure of a device that can easily perform heat dissipation of a light emitting diode and prevent short-circuits between electrodes.

The present invention provides an optical element device and a method of manufacturing the same that can easily perform heat dissipation and prevent short circuits between electrodes.

An optical device according to the present invention comprises a substrate comprising a first substrate, an insulating layer formed to surround the first substrate and a second substrate formed to surround the insulating layer; An optical element formed on the first substrate; A conductive wire electrically connecting the second substrate and the optical device; And it may include a protective layer formed to surround the optical device and the conductive wire.

Here, the insulating layer may be formed while entirely covering the side surface of the first substrate through the thickness of the substrate.

The insulating layer may separate the second substrate into at least two regions.

In addition, the insulating layer may protrude from one edge of the first substrate to separate the second substrate.

In addition, the insulating layer may be formed in at least two ring shapes with respect to the center of the center of the first substrate.

In addition, the insulating layer may be formed by anodizing at least one of the side surfaces of the second substrate.

The substrate may further include a pinned layer formed on at least one of the upper and lower surfaces of the substrate to correspond to the insulating layer.

In addition, the pinned layer may be made of any one selected from poly phthalamide (Poly Phthal Amid, PPA), epoxy resin, photosensitive partition paste, and mixtures thereof.

In addition, the first substrate may have a groove formed in the center of the upper surface thereof, and a reflecting plate may be further formed along the groove of the first substrate.

In addition, the optical device may be formed on the reflective plate.

In addition, the first substrate and the second substrate may be coupled to each other through an adhesive.

In addition, the first substrate may be made of any one selected from copper, copper alloy, aluminum, aluminum alloy, aluminum nitride, and silicon carbide.

In addition, the second substrate may be made of any one selected from copper, copper alloy, aluminum, aluminum alloy, aluminum nitride, and silicon carbide.

In addition, the method of manufacturing an optical device according to the present invention includes an anodizing step of anodizing a plurality of grooves formed along at least one of the surfaces of the base material along the longitudinal direction; Positioning the plurality of the base material to be engaged with each other, the coupling step of coupling the base material and the member by positioning the member inside the groove; A substrate separation step of separating the substrates by cutting the bonded base material and the member in the stacking direction of the base material; An optical element attaching step of attaching an optical element on an upper portion of the first substrate formed corresponding to the member in the region of the substrate; An electrical connection step of connecting a second substrate formed in a region of the substrate corresponding to the base material with the optical element and a conductive wire; And a protective layer forming step of forming a protective layer on the substrate to surround the optical device and the conductive wire.

The anodizing step may be anodizing only the groove or anodizing the entire surface of the base material on which the groove is formed.

And the bonding step may be to combine the base material and the member with each other through an adhesive.

In addition, the manufacturing method of the optical device according to the present invention comprises the anodizing step of anodizing the inside of the through hole penetrating the corresponding opposite surface from one surface of the base material; Combining the base material and the member by placing a member whose volume is contracted by being exposed to an environment of a temperature lower than room temperature in the through hole; A temperature raising step of raising the combined base material and the member to fill the inside of the through hole; A substrate separation step of separating the substrates by cutting the bonded base material and the member in the stacking direction of the base material; An optical element attaching step of attaching an optical element on an upper portion of the first substrate formed corresponding to the member in the region of the substrate; An electrical connection step of connecting a second substrate formed in a region of the substrate corresponding to the base material with the optical element and a conductive wire; And a protective layer forming step of forming a protective layer on the substrate to surround the optical device and the conductive wire.

Here, the temperature raising step may be to heat the combined base material and the member to expand the volume of the member.

And the step of raising the temperature may be to leave the combined base material and the member at room temperature to expand the volume of the member.

An optical device according to the present invention comprises a first substrate formed of any one selected from the group consisting of copper, copper alloy, aluminum, aluminum alloy, aluminum nitride and silicon carbide in the center, copper, copper alloy, aluminum, A second substrate formed of any one selected from aluminum alloy, aluminum nitride, and silicon carbide may be used to easily dissipate heat generated in an optical device to a lower portion of the substrate.

In addition, the optical device according to the present invention can improve the reliability by separating the first substrate and the second substrate through the insulating layer to prevent the electrodes of the optical device connected to the first substrate and the second substrate to be short-circuited. .

1 is a cross-sectional view of an optical device according to an embodiment of the present invention.
2 is a plan view illustrating an optical device formed on a substrate used in an optical device according to an exemplary embodiment of the present invention.
3 is a cross-sectional view of an optical device according to another embodiment of the present invention.
4 is a plan view showing that an optical device is formed on a substrate used in another optical device according to the present invention.
5 is a cross-sectional view of an optical device according to another embodiment of the present invention.
6 is a plan view showing that an optical element is formed on a substrate used in another optical element device of the present invention.
7 is a cross-sectional view of an optical device according to another embodiment of the present invention.
8 is a flowchart for explaining a method of manufacturing an optical device according to an embodiment of the present invention.
9 to 18 are views for explaining a method of manufacturing an optical device according to an embodiment of the present invention.
19 to 24 are views for explaining a method of manufacturing an optical device according to another embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, so that those skilled in the art can easily carry out the present invention.

Hereinafter, the configuration of an optical device according to an embodiment of the present invention.

1 is a cross-sectional view of an optical device according to an embodiment of the present invention. 2 is a plan view illustrating an optical device formed on a substrate used in an optical device according to an exemplary embodiment of the present invention.

1 and 2, an optical device 100 according to an embodiment of the present invention includes a substrate 110, an optical device 130, a conductive wire 140, and a protective layer 160. In addition, the pinned layer 120 may be further formed on the substrate 110, and the partition wall 150 may be further formed on the upper edge of the substrate 110.

The substrate 110 is formed in a plate shape formed in one direction as a whole. The substrate 110 supports the optical device 130 and is connected to an external PCB.

The substrate 110 may include a first substrate 111 positioned in the center, a second substrate 112 surrounding the edge of the first substrate 111, and the space between the first substrate 111 and the second substrate 112. An insulating layer 113 formed on the substrate 110 and a plating layer 114 formed under the substrate 110.

The first substrate 111 is located approximately in the center of the region of the substrate 110. The first substrate 111 partitions an area for mounting the optical device 130. The first substrate 111 may have a planar shape of a polygon such as a circle, a quadrilateral, or a pentagon. However, the content of the present invention is not limited to the planar shape of the first substrate 111. The first substrate 111 may be electrically connected to one of the electrodes of the optical device 130 through the lower surface of the optical device 130. The first substrate 111 may be formed of any one material selected from copper, copper alloy, aluminum, aluminum alloy, aluminum nitride, and silicon carbide having excellent thermal conductivity in order to perform excellent heat dissipation function to the optical device 130. Can be. In addition, an electrical signal may be easily transmitted to the optical device 130 through the first substrate 111.

The second substrate 112 is formed along an edge of the first substrate 111. The second substrate 112 is formed while surrounding the circumference of the first substrate 111. At this time, the second substrate 112 is separated from the first substrate 111 through the insulating layer 113, and is electrically independent. In addition, the second substrate 112 may be provided in two and may be coupled to each other with the first substrate 111 interposed therebetween. The second substrate 112 may be electrically connected between the second substrate 112 by the insulating layer 113. Can be independent. The second substrate 112 is connected to at least one electrode of the optical device 130 by the conductive wire 140. The second substrate 112 easily transmits an electrical signal applied to the optical device 130 and easily heats the heat of the optical device 130, and copper, copper alloy, aluminum, aluminum alloy, and nitride It may be formed of any one selected from aluminum and silicon carbide. Accordingly, heat generated in the optical device 130 may be easily radiated to the lower portion of the substrate 110 through the second substrate 112.

The insulating layer 113 is formed between the first substrate 111 and the second substrate 112. The insulating layer 113 is formed penetrating through the thickness from the top to the bottom of the substrate 110. The insulating layer 113 is formed along the circumference of the first substrate 111 and is formed to have a predetermined thickness on the outer circumference of the first substrate 111. In addition, the insulating layer 113 may be formed in a substantially ring shape along the shape of the first substrate 111. The insulating layer 113 further protrudes from one edge of the first substrate 111 to separate the second substrate 112. The insulating layer 113 may be formed by anodizing the second substrate 112. Accordingly, the insulating layer 113 may be formed by oxidizing any one selected from copper, copper alloy, aluminum, aluminum alloy, aluminum nitride, and silicon carbide constituting the second substrate 112.

The plating layer 114 may be formed under the second substrate 112. The plating layer 114 is formed by plating any one selected from copper, nickel, silver, gold, or a combination thereof under the second substrate 112, and the second substrate 112 is easily coupled to an external PCB. To be possible.

The pinned layer 120 is formed above or below the substrate 110. The pinned layer 120 is formed to correspond to an upper portion of the insulating layer 113, and is formed to a peripheral region of the insulating layer 113 to be formed on the upper or lower portion of the substrate 110. The pinned layer 120 is coupled to the substrate 110 in a state in which the insulating layer 113 is wrapped. The pinned layer 120 may protect the insulating layer 113, which is relatively less durable than the first and second substrates 111 and 112, from pressure. The pinned layer 120 may be formed using poly phthalamide (PPA), epoxy resin, photosensitive paste, or a mixture thereof.

The optical device 130 is formed on the substrate 110. The optical device 130 is attached to the upper portion of the first substrate 111 through the adhesive 131. The optical device 130 is provided with at least one, may be provided in plurality. In addition, the optical device 130 may be attached to the upper portion of the first substrate 111 through soldering instead of the adhesive 131. The optical device 130 may emit light and emit light toward the upper portion of the substrate 110. The optical device 130 may be formed of a light emitting diode (LED). In addition, the optical device 130 is electrically connected to the second substrate 112 through the conductive wire 140. Accordingly, the signal of the power input through the second substrate 112 is transmitted to the optical device 150 through the conductive wire 140.

The conductive wire 140 connects the second substrate 112 with the optical device 130. The conductive wire 140 may be formed of two (140, 141) to be connected to each electrode of the optical device 130. The conductive wire 140 is typically formed of gold, copper or aluminum with high electrical conductivity. In particular, when the conductive wire 140 is gold or copper, the electrical conductivity is excellent, but since the bonding strength with the second substrate 112 is low, selective plating may be additionally added on the upper portion of the second substrate 112. Can be. On the other hand, when the conductive wire 140 is aluminum, the electrical conductivity is lower than that of gold or copper, but has an advantage of excellent bonding force with the second substrate 112. The conductive wire 140 may be formed by forming a ball bonding region in the optical device 130 at one end and a stitch bonding region in the second substrate 112 at the other end. Of course, the conductive wire 140 may be formed by forming a ball bonding region on the second substrate 112 with one end and a stitch bonding region on the optical device 130 with the other end.

The partition wall 150 is formed on the substrate 110. The partition wall 150 is formed at an edge of the second substrate 112. The partition wall 150 protrudes from the upper surface of the second substrate 112 in a vertical direction. The partition wall 150 partitions an area for accommodating the protective layer 160. The barrier rib 150 may be formed of an epoxy resin having good light reflectivity, a photosensitive barrier rib paste (PSR), or a mixture thereof, and in some cases, may be formed of silicon.

The protective layer 160 is formed on the substrate 110 and is formed in an area partitioned by the partition wall 150. The protective layer 160 is formed to surround the optical device 130 and the conductive wires 140 and 141 therein. The protective layer 160 protects the optical device 130 and the conductive wire 140 from external pressure.

In addition, the protective layer 160 may be formed by mixing a conventional fluorescent material with an epoxy resin. The fluorescent material is excited when the visible light or the ultraviolet light generated from the optical device 130 is applied and is then stabilized to generate visible light. Accordingly, the protective layer 160 formed of a fluorescent material may convert light generated from the optical device 130 into red cyan light (RGB) light or white light. Therefore, the optical device device 100 according to an embodiment of the present invention can be used as a backlight unit (BLU) of a liquid crystal display panel (Liqiud Crystal Display Panel).

As described above, the optical device device 100 according to an exemplary embodiment of the present invention may include a first substrate 111 formed of copper at the center of the substrate 110, and aluminum or the circumference of the first substrate 111. The second substrate 112 may be formed of an aluminum alloy, and heat generated from the optical device 130 may be easily radiated downward through the substrate 110. In addition, since the first substrate 111 and the second substrate 112 are separated through the insulating layer 113, the optical device 130 connected to the first substrate 111 and the second substrate 112 is separated. It is possible to improve the reliability by preventing the short circuit of the electrodes.

Hereinafter, the configuration of an optical device according to another embodiment of the present invention will be described.

3 is a cross-sectional view of an optical device according to another embodiment of the present invention. 4 is a plan view showing that an optical device is formed on a substrate used in another optical device according to the present invention. Parts having the same configuration and operation as those of the foregoing embodiment are denoted by the same reference numerals, and will be described below with emphasis on differences.

3 and 4, an optical device device 200 according to another embodiment of the present invention may include a substrate 210, a pinned layer 120, an optical device 130, a conductive wire 140, and a partition wall 150. And a protective layer 160.

The substrate 210 includes a first substrate 111 positioned substantially at the center, a second substrate 212 formed while surrounding a circumference of the first substrate 111, the first substrate 111, and a second substrate 212. Insulation layer 213, the plating layer 114 is positioned between.

Here, the first substrate 111 as in the previous embodiment has a planar shape of approximately circular or polygonal, and is formed of any one material selected from copper, copper alloy, aluminum, aluminum alloy, aluminum nitride and silicon carbide. The first substrate 111 contacts the bottom surface of the optical device 130 through the adhesive 131. In addition, when the adhesive 131 is a conductive adhesive or when the optical device 130 is coupled to the upper portion of the first substrate 111 through soldering, the first substrate 111 is the optical device 130. It may be electrically connected to any one of the electrodes. As a result, the first substrate 111 has one polarity, for example, a positive polarity.

The second substrate 212 is formed along the outer circumference of the first substrate 111. Therefore, the second substrate 212 is provided with any one selected from copper, copper alloy, aluminum, aluminum alloy, aluminum nitride, and silicon carbide, and has a ring-shaped planar shape along the first substrate 111. The second substrate 212 is connected to the other one of the electrodes of the optical device 130, for example, a cathode and the conductive wire 140. Therefore, the second substrate 212 has the polarity of the cathode as a whole. In addition, as described above, a plating layer 114 may be further formed on the bottom surface of the second substrate 212 so that the second substrate 212 may be easily coupled to an external PCB.

The insulating layer 213 is formed between the first substrate 111 and the second substrate 212. Like the previous embodiment, the insulating layer 213 is formed by anodizing any one selected from copper, copper alloy, aluminum, aluminum alloy, aluminum nitride, and silicon carbide constituting the second substrate 212. However, the insulating layer 213 is provided only between the first substrate 111 and the second substrate 212 and does not partition an area of the second substrate 212. Thus, the second substrate 212 is formed in a single shape, and has a single polarity.

As described above, the optical device device 200 according to another embodiment of the present invention, the substrate 110 is made of any one material selected from copper, copper alloy, aluminum, aluminum alloy, aluminum nitride and silicon carbide By forming the substrate 111 and the second substrate 212 made of any one selected from copper, copper alloy, aluminum, aluminum alloy, aluminum nitride, and silicon carbide, the heat of the optical device 130 can be easily radiated. have. In addition, by separating the first substrate 111 and the second substrate 212 through the insulating layer 213, it is possible to prevent the short circuit between the electrodes. In addition, since at least one optical device 130 is electrically connected to the first substrate 111 through the adhesive 131, the conductive wire can be reduced, and the electrical characteristics are excellent.

Hereinafter, the configuration of an optical device according to another embodiment of the present invention.

5 is a cross-sectional view of an optical device according to another embodiment of the present invention. 6 is a plan view showing that an optical element is formed on a substrate used in another optical element device of the present invention.

5 and 6, an optical device device 300 according to another embodiment of the present invention may include a substrate 310, a fixed layer 120, an optical device 130, a conductive wire 140, and a partition wall 150. ), And a protective layer 160.

The substrate 310 includes a first substrate 111, a second substrate 212, a first insulating layer 213, a third substrate 314, and a second insulating layer 315. Here, the first substrate 111, the second substrate 212 and the first insulating layer 213 are the same as in the previous embodiment.

The third substrate 314 is formed along the outer circumference of the second substrate 212. The third substrate 314 is formed to have a ring-shaped plane shape on the outer periphery of the second substrate 212. The third substrate 314 has a high thermal conductivity to easily dissipate heat generated from the optical device 130, and has an electrical conductivity to easily transmit electrical signals input and output to the optical device 130. It is preferably formed of a high material. To this end, the third substrate 314 may also be formed of aluminum or an aluminum alloy. In addition, the third substrate 314 is electrically independent of the second substrate 212 through the second insulating layer 315. Therefore, the third substrate 314 may have a different polarity than the second substrate 212.

The second insulating layer 315 is formed between the second substrate 212 and the third substrate 314. The second insulating layer 315 is also formed through the thickness from the top to the bottom of the substrate 110. The second insulating layer 315 may be formed by anodizing either the second substrate 212 or the third substrate 314. The second insulating layer 315 electrically separates the second substrate 212 and the third substrate 314, so that the respective signals pass through the second substrate 212 and the third substrate 314. It provides a path to be applied to the optical device 130.

As described above, the optical device device 300 according to another embodiment of the present invention, the substrate 110 is made of copper, the first substrate 111, copper, copper alloy, aluminum, aluminum alloy, aluminum nitride and carbide The second substrate 212 and the third substrate 314 formed of any one selected from silicon may be formed to easily dissipate heat of the optical device 130. In addition, the first insulating layer 213 and the second insulating layer 315 electrically separate the first substrate 111 to the third substrate 314 so that a short circuit between electrodes of the optical device 130 occurs. Can be prevented.

Hereinafter, the configuration of an optical device according to another embodiment of the present invention.

7 is a cross-sectional view of an optical device according to another embodiment of the present invention.

Referring to FIG. 7, an optical device device 400 according to another embodiment of the present invention may include a substrate 410, a reflective layer 420, an optical device 130, a conductive wire 140, and a barrier wall 150. Layer 160.

The substrate 410 includes a first substrate 411, a second substrate 212, a first insulating layer 213, a third substrate 314, a second insulating layer 315, and a plating layer 114. . The second substrate 212, the first insulating layer 213, the third substrate 314, the second insulating layer 315, and the plating layer 114 are the same as in the previous embodiment.

The first substrate 411 is similar to the first substrate 111 mentioned in the above embodiments. However, the first substrate 411 includes a groove formed inward from the top surface in the center. In addition, the reflective layer 420 is positioned inside the groove, and the optical device 130 is mounted on the reflective layer 420.

The reflective layer 420 is located inside the groove of the first substrate 411. The reflective layer 420 reflects the light reaching the first substrate 111 among the light generated from the optical device 130. In order to increase the amount of light reflected from the reflective layer 420, the reflective layer 420 may be made of silver (Ag). Accordingly, the optical device device 400 according to another embodiment of the present invention can increase the light efficiency through the reflective layer 420 while increasing the heat radiation effect of the optical device 160.

As described above, the optical device device 400 according to another embodiment of the present invention is the substrate 410 is made of any one material selected from copper, copper alloy, aluminum, aluminum alloy, aluminum nitride and silicon carbide The first substrate 411 and the second substrate 212 and the third substrate 314 made of any one selected from copper, a copper alloy, aluminum, an aluminum alloy, aluminum nitride, and silicon carbide form a row of the optical device 130. The heat dissipation can be easily dissipated, and a short circuit between the electrodes can be prevented through the first insulating layer 213 and the second insulating layer 315. In addition, by providing a groove from the top surface of the first substrate 411 to the inside, and forming a reflective layer 420 inside the groove, the light efficiency of the optical device 130 can be reflected upward, thereby improving the light efficiency.

Hereinafter, a method of manufacturing an optical device according to an embodiment of the present invention will be described.

8 is a flowchart for explaining a method of manufacturing an optical device according to an embodiment of the present invention. 9 to 18 are views for explaining a method of manufacturing an optical device according to an embodiment of the present invention.

Referring to FIG. 8, a method of manufacturing an optical device device 100 according to an embodiment of the present invention includes an anodizing step S1, a bonding step S2, a substrate separation step S3, a fixed layer forming step S4, A barrier rib forming step S5, an optical device attaching step S6, an electrical connection step S7, and a protective layer forming step S8 are included. Hereinafter, each step of FIG. 8 will be described with reference to FIGS. 9 to 18.

8, 9, and 10, the anodizing step S1 includes a base material 10 and anodizing one surface of the base material 10.

Referring to FIG. 9, the base material 10 is made of any one selected from copper, a copper alloy, aluminum, an aluminum alloy, aluminum nitride, and silicon carbide, and has a groove 10a on at least one surface thereof. The groove 10a is formed along the longitudinal direction of the base material 10, and a plurality of grooves 10 are spaced apart at regular intervals.

Referring to FIG. 10, anodizing is performed on a surface provided with the groove 10a among the surfaces forming the base material 10. The anodizing is oxidized to a certain thickness along the shape of the surface of the base material 10 to form an anodizing layer (11).

In addition, after the anodizing step S1, pores having a fine size existing inside the anodizing layer 11 may be filled using any one or a combination thereof selected from benzocyclobuten (BCB) and an insulating organic material, or fine pores of the pores. Sealing step to block the entrance of the can be made further. Since the anodizing layer 11 has brittleness easily broken by force applied from the outside, by filling the pores which are the most vulnerable parts with the materials, the mechanical strength of the anodizing layer 11 is improved and the insulation performance is improved. To do so. And when the pores are sealed using BCB or an insulating organic material, a heat curing step of applying heat to cure at a predetermined temperature may be further performed.

8 and 11, the coupling step S2 is a step of engaging the base material 10 and the member 20 by placing the member 20 between the pair of base materials 10. The base material 10 is coupled to abut between the anodizing layer 11, the member 20 is formed in a cylindrical shape corresponding to the engagement shape of the anodizing layer (11). In addition, the member 20 is formed of any one material selected from copper, copper alloy, aluminum, aluminum alloy, aluminum nitride, and silicon carbide, and is matched with the anodizing layer 11 of the base material 10. At this time, an adhesive may be used between the base 10 and the member 20 in contact with each other to increase the bonding force. In addition, although not separately illustrated, a process of forming roughness on the member 20 through sand blasting or the like may be further performed to increase the bonding force between the base material 10 and the member 20.

8, 12, 13A and 13B, the substrate separating step S3 is a step of forming the individual substrate 110 by cutting the base material 10 and the member 20 in a bonded state. .

As shown in FIG. 12, the base material 10 and the member 20 are cut to have a constant size. 13A and 13B, the substrate 110 thus formed includes a first substrate 111 corresponding to the member 20, a second substrate 112 corresponding to the base material 10, An insulating layer 113 corresponding to the anodizing layer 11 of the base material 10 is formed. The first substrate 111 and the second substrate 112 are spaced apart from the insulating layer 113, and are also electrically independent.

8 and 14, the fixing layer forming step S4 is a step of forming the fixing layer 120 on at least one of an upper surface and a lower surface of the substrate 110. The pinned layer 120 may be formed using poly phthalamide (PPA), epoxy resin, photosensitive paste, or a mixture thereof. The pinned layer 120 may protect the insulating layer 113, which is relatively less durable than the first and second substrates 111 and 112, from pressure.

In addition, before and after the pinned layer 120 is formed, a plating layer 114 may be formed below the second substrate 112. The plating layer 114 is formed by performing plating with any one selected from copper, nickel, silver, gold, or a combination thereof on the exposed portion of the second substrate 112.

8 and 15, the partition wall forming step S5 is a step of forming the partition wall 150 on the second substrate 112. The partition wall 150 protrudes from the upper surface of the second substrate 112 in a vertical direction. The partition wall 150 may be formed using a screen printing method or a mold method, and the material may include poly phthalamide (PPA), an epoxy resin, a photosensitive partition paste (PSR), or a mixture thereof. Or may be formed using silicon.

8 and 16, the optical device attaching step S6 is a step of attaching the optical device 130 to the upper portion of the substrate 110. In this case, the optical device 130 may be a light emitting diode (LED). The optical device 130 may be attached to the upper portion of the first substrate 111 through the adhesive 131 on the lower surface.

8 and 17, the electrical connection step S7 is a step of connecting the second substrate 112 and the optical device 130 using the conductive wires 140 and 141. The external signal transmitted to the substrate 112 is transmitted to the optical device 130 through the conductive wires 140 and 141 to control the light emission of the optical device 130.

8 and 18, the protective layer forming step S8 is a step of forming the protective layer 160 by applying a fluorescent material to a region partitioned by the barrier wall 150. The protective layer 160 is formed on the substrate 110 to surround the optical device 130 and the conductive wires 140 and 141. The protective layer 160 protects the optical device 130 from an external impact. In addition, the protective layer 160 may convert the light generated by the optical device 130 into white light.

Hereinafter, a method of manufacturing an optical device according to another exemplary embodiment of the present invention will be described.

Hereinafter, a method of manufacturing an optical device according to another exemplary embodiment of the present invention will be described.

19 is a flowchart for explaining a method of manufacturing an optical device according to another embodiment of the present invention. 20 to 24 are views for explaining a method of manufacturing an optical device according to another embodiment of the present invention.

Referring to FIG. 19, a method of manufacturing an optical device device 200 according to another exemplary embodiment of the present invention may include an anodizing step S1, a coupling step S2, a temperature raising step S3, a substrate separation step S4, and a fixed layer. Forming step (S5), barrier rib forming step (S6), optical element attaching step (S7), electrical connection step (S8), protective layer forming step (S9). Hereinafter, each step of FIG. 19 will be described with reference to FIGS. 20 to 24.

19, 20 and 21, the anodizing step (S1) is a copper, copper alloy, aluminum, aluminum alloy, aluminum nitride formed with at least one through hole (10b) from one surface to the corresponding opposite surface And a base material 10 made of any one selected from silicon carbide, and anodizing the inside of the through hole 10b. The anodizing is performed by oxidizing to a predetermined thickness along the shape of the through hole 10b, and as a result, the anodizing layer 11 is formed. Of course, as described above, after the anodizing step S1, pores having a fine size existing inside the anodizing layer 11 may be filled using any one or a combination thereof selected from benzocyclobuten (BCB) and an insulating organic material. A sealing step or a curing step for blocking the inlet of the micropores of the pores may be further made.

19 and 22, the bonding step S2 is a step of bonding the contracted member 20 ′ to the inside of the anodizing layer 11. Here, the contracted member 20 'is made of any one selected from copper, copper alloy, aluminum, aluminum alloy, aluminum nitride, and silicon carbide, and the anodizing layer 11 in a state in which the volume is shrunk by being exposed to a cryogenic environment. ) Is combined inside. At this time, the diameter of the contracted member 20 'is smaller than the inner diameter of the anodizing layer 11, so that the contracted member 20' is easily located inside the anodizing layer 11. can do.

19 and 23, the temperature raising step S3 is a step of raising the temperature in a state in which the base material 10 and the contracted member 20 'are coupled to each other. The temperature raising step (S3) may be increased by heating, or may be made by standing at room temperature without additional heating. In addition, in the temperature increasing step S3, the contracted member 20 ′ expands in volume to fill the inside of the anodizing layer 11 of the base material 10. As a result, the member 20 can be firmly fixed to the inside of the anodizing layer 11 without a separate adhesive.

19 and 24, the substrate separating step S4 is a step of forming the individual substrate 210 by cutting the base material 10 and the member 20 in a bonded state. The substrate 210 thus formed includes a first substrate 111 corresponding to the member 20, a second substrate 212 corresponding to the base material 10, and an anodizing layer 11 of the base material 10. An insulating layer 213 is formed. The first substrate 111 and the second substrate 212 are spaced apart from the insulating layer 213 and are electrically independent.

Meanwhile, in addition, the fixed layer forming step (S5) to the protective layer forming step (S9) is the same as the fixed layer forming step (S4) to the protective layer forming step (S8) of the manufacturing method described above. Therefore, detailed description of the above steps will be omitted.

In addition, although the manufacturing method of the optical device device 200 according to another embodiment of the present invention has been described, when the manufacturing method is used, the planar shape of the first substrate 111 is not only circular but also polygonal or Even when a part of the first substrate 111 is protruded, it can be easily manufactured.

What has been described above is just one embodiment for carrying out the optical device according to the present invention and a manufacturing method thereof, and the present invention is not limited to the above embodiment, and as claimed in the following claims, the present invention Without departing from the gist of the present invention, those skilled in the art to which the present invention pertains to the technical spirit of the present invention to the extent that various changes can be made.

100, 200, 300, 400; Optical device
110, 210, 310, 410; Board
111, 411; First substrate 112, 212; Second substrate
113, 213; First insulating layer 314; Third substrate
315; Second insulating layer 120; Fixed layer
130; Optical elements 140 and 141; Conductive wire
150; Bulkhead 160; Protective layer
420; Reflective layer

Claims (19)

A substrate comprising a first substrate, an insulating layer formed to surround the first substrate, and a second substrate formed to surround the insulating layer;
An optical element formed on the first substrate;
A conductive wire electrically connecting the second substrate and the optical device; And
And a protective layer formed to surround the optical element and the conductive wire. The method of claim 1,
And the insulating layer penetrates through the thickness of the substrate and entirely surrounds the side surface of the first substrate. The method of claim 1,
And the insulating layer separates the second substrate into at least two regions. The method of claim 3, wherein
And the insulating layer protrudes from one side edge of the first substrate to separate the second substrate. The method of claim 3, wherein
The insulating layer is an optical element device formed in at least two ring shape with respect to the center of the center of the first substrate, The method of claim 5, wherein
And the insulating layer is formed by anodizing at least one of the side surfaces of the second substrate. The method of claim 1,
And a pinned layer formed on at least one of an upper surface and a lower surface of the substrate to correspond to the insulating layer. The method of claim 7, wherein
The pinned layer is any one selected from poly phthalamide (Poly Phthal Amid, PPA), epoxy resin, photosensitive partition paste, and mixtures thereof. The method of claim 1,
The first substrate has a groove formed in the center of the upper surface toward the inside, the optical element device further formed with a reflector along the groove of the first substrate. The method of claim 9,
An optical element device, wherein the optical element is formed on the reflection plate. The method of claim 1,
And the first substrate and the second substrate are coupled to each other via an adhesive. The method of claim 1,
And the first substrate is any one selected from copper, copper alloy, aluminum, aluminum alloy, aluminum nitride, and silicon carbide. The method of claim 1,
The second substrate is any one selected from copper, copper alloy, aluminum, aluminum alloy, aluminum nitride and silicon carbide. An anodizing step of anodizing a plurality of grooves formed along at least one surface of the base material along a length direction;
Positioning the plurality of the base material to be engaged with each other, the coupling step of coupling the base material and the member by positioning the member inside the groove;
A substrate separation step of separating the substrates by cutting the bonded base material and the member in the stacking direction of the base material;
An optical element attaching step of attaching an optical element on an upper portion of the first substrate formed corresponding to the member in the region of the substrate;
An electrical connection step of connecting a second substrate formed in a region of the substrate corresponding to the base material with the optical element and a conductive wire; And
A protective layer forming step of forming a protective layer on top of the substrate to surround the optical element and the conductive wire. The method of claim 14,
And the anodizing step anodizes only the grooves or anodizes the entire surface of the base material on which the grooves are formed. The method of claim 14,
The bonding step is a method of manufacturing an optical element device for bonding the base material and the member to each other through an adhesive. Anodizing step of anodizing the inside of the through hole penetrating the corresponding opposite surface from one surface of the base material;
Combining the base material and the member by placing a member whose volume is contracted by being exposed to an environment of a temperature lower than room temperature in the through hole;
A temperature raising step of raising the combined base material and the member to fill the inside of the through hole;
A substrate separation step of separating the substrates by cutting the bonded base material and the member in the stacking direction of the base material;
An optical element attaching step of attaching an optical element on an upper portion of the first substrate formed corresponding to the member in the region of the substrate;
An electrical connection step of connecting a second substrate formed in a region of the substrate corresponding to the base material with the optical element and a conductive wire; And
A protective layer forming step of forming a protective layer on top of the substrate to surround the optical element and the conductive wire. The method of claim 17,
The heating step is a method of manufacturing an optical element device to heat the base material and the member bonded to expand the volume of the member. The method of claim 17,
Wherein the step of raising the temperature of the optical element device to allow the volume of the member to expand by leaving the combined base material and the member at room temperature.
KR1020100015692A 2010-02-22 2010-02-22 Optical Element Device Substrate and the Optical Element Device thereby and fabricating method thereof KR101124254B1 (en)

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US9913381B2 (en) 2013-08-16 2018-03-06 Point Engineering Co., Ltd. Base substrate which prevents burrs generated during the cutting process and method for manufacturing the same
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JP2006303548A (en) 2001-04-17 2006-11-02 Nichia Chem Ind Ltd Light-emitting device
KR100616692B1 (en) 2005-08-01 2006-08-28 삼성전기주식회사 Led package comprising metal substrate and menufacturing method thereof
KR100869530B1 (en) 2007-06-13 2008-11-19 서울반도체 주식회사 Led package for back light and back light unit comprising the same
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US9913381B2 (en) 2013-08-16 2018-03-06 Point Engineering Co., Ltd. Base substrate which prevents burrs generated during the cutting process and method for manufacturing the same
KR20210147524A (en) * 2020-05-29 2021-12-07 주식회사 옵토웰 Optical sensor module and manufacturing method of optical sensor module

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