KR20110079151A - Method for rework of abnormal metal layer - Google Patents
Method for rework of abnormal metal layer Download PDFInfo
- Publication number
- KR20110079151A KR20110079151A KR1020090136128A KR20090136128A KR20110079151A KR 20110079151 A KR20110079151 A KR 20110079151A KR 1020090136128 A KR1020090136128 A KR 1020090136128A KR 20090136128 A KR20090136128 A KR 20090136128A KR 20110079151 A KR20110079151 A KR 20110079151A
- Authority
- KR
- South Korea
- Prior art keywords
- liner
- tin
- layer
- metal layer
- abnormal
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 54
- 239000002184 metal Substances 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims abstract description 32
- 230000002159 abnormal effect Effects 0.000 title claims abstract description 26
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 239000013078 crystal Substances 0.000 claims abstract description 3
- 229910016570 AlCu Inorganic materials 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 230000008021 deposition Effects 0.000 description 4
- 230000005856 abnormality Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
The present invention relates to a method for reworking an abnormal metal layer, and more particularly, to reduce scrap rate by providing accurate criteria when reworking an abnormal metal layer, and to secure stability when forming a remetal line in a subsequent process. It relates to an abnormal metal layer rework method.
As is well known, in the manufacture of integrated circuits of semiconductor devices, the purpose of forming a metal layer (hereinafter referred to as a 'metal layer') is to use a low-resistance metal to supply power as well as electrical signals of a circuit. This is for supplying necessary functions for operation.
In general, the metal line forming method is a Liner Ti, Liner TiN or Liner Ti / TiN layer in order to improve the adhesion direction and the crystallographic direction of the aluminum film in a high vacuum chamber. Deposit.
In addition, a metal stack layer such as AlCu / TiN and AlCu / Ti / TiN may be formed of aluminum or an aluminum alloy.
In addition, pattern definition defines the aluminum wiring required by the device through a subsequent photo & etch process.
Rework may be performed due to such a system error or an abnormal process. In this case, as illustrated in FIG. 1, an abnormal metal line may be etched back. Abnormal metal line was removed.
However, such a method is difficult to control during etch back (damage) to damage the sub-layer (sub-layer) frequently (damage) was very low success rate due to rework was extremely low.
In addition, there is also a problem in the reliability is urgently requested to improve.
The present invention was created in view of the above-described problems in the prior art, and is an oxide layer that is a substrate layer due to etch back when reworking a metal layer when an abnormal metal layer occurs. Improved the way of damaging up to (oxide layer) to etch back only to Liner Ti / TiN layer, and to remove residual recipe or Liner Ti / TiN layer by CMP This prevents damage to the sub oxide layer / W plug and creates uniform rework conditions, thereby ensuring maximum stability when forming re-metal lines in subsequent processes. The main challenge is to provide an abnormal metal layer rework method.
The present invention is a means for achieving the above problems, by depositing a liner Ti, Liner TiN or Liner Ti / TiN layer in a high vacuum chamber in order to improve the adhesion direction and the crystal direction of the aluminum film when forming a metal line, AlCu / TiN A method of reworking an abnormal metal layer generated when forming a metal stack layer of AlCu / Ti / TiN; Etching the abnormal metal layer to remove only the Liner Ti / TiN rare layer; The second step of removing the remaining recipe or Liner Ti / TiN layer after the first step by CMP provides a method for reworking the abnormal metal layer.
At this time, in the second step, the recipe or liner Ti / TiN layer removed by CMP is characterized in that the 100 ~ 500Å.
In addition, the second step is characterized in that proceeds while checking the metal remains by measuring the review and EDX through SEM.
In addition, after the second step, the metal layer is reformed according to the normal AlCu Deposition Route, but it is also characterized by reconfirming the abnormality by measuring the PCM after the metal RIE.
The abnormal metal layer rework method according to the present invention provides the following effects.
First, when reworking an abnormal metal layer (Abnormal Metal Layer), it is possible to reduce the scrap rate by providing accurate criteria and to achieve a success rate close to 100%.
Secondly, the method of completely removing the Liner Ti / TiN layer during the blank etch-back of the conventional method inflicts damage to the substrate & plug, but the present invention damages the part. The success rate is very high.
Third, the same applies to the rework of abnormal metal layers in other processes.
Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment according to the present invention.
FIG. 2 is a schematic diagram of an exemplary metal layer illustrating a rework method according to the present invention, and FIG. 3 is a process cross-sectional view of the rework method according to the present invention.
According to the present invention, when a rework of a metal layer is required due to a system error or an abnormal process in forming a metal (metal) wiring, an etchback is applied to a liner Ti / Only TiN layer is carried out.
The remaining recipe or liner Ti / TiN layer may be removed by chemical mechanical polish (CMP) to prevent damage of the sub oxide layer / W plug.
In addition, it is possible to create a uniform rework condition through this process, thereby ensuring maximum stability when forming a re-metal line in a subsequent process.
For example, as shown in FIG. 2, when a normal metal layer is formed by deposition, it is the same as the example of (a) formed of Ti / TiN / AlCu / Ti / TiN.
However, when an abnormal metal layer is deposited as shown in (b), it must be reworked after the metal layer is removed through the same method as the present invention.
At this time, a blank etch back (Blank Etch) on the liner Ti / TiN by using a selection ratio of aluminum and Liner Ti / TiN in the metal etch chamber (metal line) to remove the abnormal metal layer Back)
In addition, as shown in FIG. 3, the remaining recipe or Liner Ti / TiN layer is polished by 100 to 500 A through W CMP and touch up to be completely removed.
Through this, the Liner Ti / TiN layers including the abnormal AlCu deposition layer can be removed cleanly, and W CMP and Touch Up are easy to control, without damaging the Sub Layer. The metal line of the abnormally formed metal layer can be accurately removed.
In this process, reviews and EDX (testing the electrical behavior of the device in the wafer) are measured by SEM to confirm the presence of metal.
In this way, after the rework process is completed, the metal layer is reformed according to the normal AlCu Deposition Route.
At this time, it is better to check the PCM (Process control monitor) after the metal RIE to check the abnormality again.
It is apparent to those skilled in the art that the present invention is not limited to the above embodiments and can be practiced in various ways without departing from the technical spirit of the present invention. will be.
1 is a cross-sectional view of a rework process of a metal layer according to the prior art;
2 is a schematic diagram of an exemplary metal layer illustrating a rework method according to the present invention, and
3 is a process cross-sectional view of the rework method according to the present invention.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020090136128A KR20110079151A (en) | 2009-12-31 | 2009-12-31 | Method for rework of abnormal metal layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020090136128A KR20110079151A (en) | 2009-12-31 | 2009-12-31 | Method for rework of abnormal metal layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20110079151A true KR20110079151A (en) | 2011-07-07 |
Family
ID=44918559
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020090136128A KR20110079151A (en) | 2009-12-31 | 2009-12-31 | Method for rework of abnormal metal layer |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR20110079151A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11654671B2 (en) | 2021-04-26 | 2023-05-23 | Samsung Display Co., Ltd. | Method for manufacturing a display device |
-
2009
- 2009-12-31 KR KR1020090136128A patent/KR20110079151A/en not_active Application Discontinuation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11654671B2 (en) | 2021-04-26 | 2023-05-23 | Samsung Display Co., Ltd. | Method for manufacturing a display device |
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