KR20110056241A - 박막 트랜지스터 구조체 및 그 관련 방법 - Google Patents

박막 트랜지스터 구조체 및 그 관련 방법 Download PDF

Info

Publication number
KR20110056241A
KR20110056241A KR1020100115336A KR20100115336A KR20110056241A KR 20110056241 A KR20110056241 A KR 20110056241A KR 1020100115336 A KR1020100115336 A KR 1020100115336A KR 20100115336 A KR20100115336 A KR 20100115336A KR 20110056241 A KR20110056241 A KR 20110056241A
Authority
KR
South Korea
Prior art keywords
film
layer
substrate
semiconductor material
polyimide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020100115336A
Other languages
English (en)
Korean (ko)
Inventor
브라이언 씨. 오만
토마스 에드워드 카니
코스탄티노스 쿠르타키스
살라 부사드
Original Assignee
이 아이 듀폰 디 네모아 앤드 캄파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이 아이 듀폰 디 네모아 앤드 캄파니 filed Critical 이 아이 듀폰 디 네모아 앤드 캄파니
Publication of KR20110056241A publication Critical patent/KR20110056241A/ko
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D179/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
    • C09D179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C09D179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
KR1020100115336A 2009-11-20 2010-11-19 박막 트랜지스터 구조체 및 그 관련 방법 Withdrawn KR20110056241A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/622,789 2009-11-20
US12/622,789 US8319299B2 (en) 2009-11-20 2009-11-20 Thin film transistor compositions, and methods relating thereto

Publications (1)

Publication Number Publication Date
KR20110056241A true KR20110056241A (ko) 2011-05-26

Family

ID=43902287

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100115336A Withdrawn KR20110056241A (ko) 2009-11-20 2010-11-19 박막 트랜지스터 구조체 및 그 관련 방법

Country Status (5)

Country Link
US (1) US8319299B2 (https=)
JP (1) JP5731171B2 (https=)
KR (1) KR20110056241A (https=)
CN (1) CN102074480B (https=)
DE (1) DE102010051851A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101125567B1 (ko) * 2009-12-24 2012-03-22 삼성모바일디스플레이주식회사 고분자 기판 및 그 제조 방법과 상기 고분자 기판을 포함하는 표시 장치 및 그 제조 방법
KR101728486B1 (ko) * 2010-03-31 2017-04-20 삼성디스플레이 주식회사 박막 트랜지스터, 그 제조 방법 및 이를 포함하는 플렉시블 디스플레이 장치
CN103354243B (zh) * 2013-06-28 2016-01-06 京东方科技集团股份有限公司 一种薄膜晶体管、其制备方法及相关装置
CN106893121B (zh) * 2015-12-17 2020-07-03 深圳瑞华泰薄膜科技股份有限公司 一种高尺寸稳定型聚酰亚胺薄膜及其制备方法
US10424670B2 (en) 2016-12-30 2019-09-24 Intel Corporation Display panel with reduced power consumption
CN113471249B (zh) * 2020-03-31 2024-09-20 华为技术有限公司 一种显示组件、显示装置和指纹识别方法
CN116067241B (zh) * 2023-03-02 2023-08-29 中国工程物理研究院激光聚变研究中心 一种纤维改性的三明治飞片结构及其制备方法

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS603430B2 (ja) * 1980-08-13 1985-01-28 石原産業株式会社 重合体組成物用二酸化チタン顔料
JPS63312328A (ja) 1987-06-15 1988-12-20 Tokai Carbon Co Ltd ＳｉＣウイスカ−強化ポリイミド樹脂の製造方法
US5837767A (en) 1994-10-31 1998-11-17 Ntn Corporation Stripping fingers
US6120588A (en) 1996-07-19 2000-09-19 E Ink Corporation Electronically addressable microencapsulated ink and display thereof
US6120839A (en) 1995-07-20 2000-09-19 E Ink Corporation Electro-osmotic displays and materials for making the same
US6017584A (en) 1995-07-20 2000-01-25 E Ink Corporation Multi-color electrophoretic displays and materials for making the same
US6124851A (en) 1995-07-20 2000-09-26 E Ink Corporation Electronic book with multiple page displays
US6118426A (en) 1995-07-20 2000-09-12 E Ink Corporation Transducers and indicators having printed displays
JP3679224B2 (ja) 1996-05-10 2005-08-03 Ｎｔｎ株式会社 分離爪
US5930026A (en) 1996-10-25 1999-07-27 Massachusetts Institute Of Technology Nonemissive displays and piezoelectric power supplies therefor
US5961804A (en) 1997-03-18 1999-10-05 Massachusetts Institute Of Technology Microencapsulated electrophoretic display
US6067185A (en) 1997-08-28 2000-05-23 E Ink Corporation Process for creating an encapsulated electrophoretic display
CN1085707C (zh) 1997-10-23 2002-05-29 上海市合成树脂研究所 钛酸钾晶须增强聚酰亚胺复合材料的制备方法
EP1075670B1 (en) 1998-04-27 2008-12-17 E-Ink Corporation Shutter mode microencapsulated electrophoretic display
KR100519366B1 (ko) * 1999-04-03 2005-10-07 엘지.필립스 엘시디 주식회사 멀티도메인 액정표시소자
US6372538B1 (en) 2000-03-16 2002-04-16 University Of Delaware Fabrication of thin-film, flexible photovoltaic module
KR100767233B1 (ko) * 2000-04-18 2007-10-17 이 잉크 코포레이션 박막 트랜지스터의 제조 공정 및 기판
US6710456B1 (en) * 2000-08-31 2004-03-23 Micron Technology, Inc. Composite interposer for BGA packages
CN100580014C (zh) * 2001-06-15 2010-01-13 株式会社钟化 半导电性聚酰亚胺膜及其制造方法
WO2002102882A1 (en) 2001-06-15 2002-12-27 Kaneka Corporation Semiconductive polyimide film and process for production thereof
US7271333B2 (en) 2001-07-20 2007-09-18 Ascent Solar Technologies, Inc. Apparatus and method of production of thin film photovoltaic modules
JP2003082231A (ja) 2001-09-17 2003-03-19 Kanegafuchi Chem Ind Co Ltd ポリイミド樹脂組成物、ポリイミドフィルムおよびポリイミド管状物
JP2003306553A (ja) * 2002-04-15 2003-10-31 Kanegafuchi Chem Ind Co Ltd ポリイミド成形体
JP2004035825A (ja) 2002-07-05 2004-02-05 Kanegafuchi Chem Ind Co Ltd 半導電性ポリイミドフィルムおよびその製造方法
JP4119700B2 (ja) 2002-07-26 2008-07-16 株式会社カネカ 樹脂添加用無機粉体分散液の製造方法、並びに、ポリイミドフィルムおよびポリアミドイミドフィルム
EP1529314A1 (de) 2002-08-16 2005-05-11 DaimlerChrysler AG KAROSSERIETEIL EINES FAHRZEUGES MIT EINER DüNNSCHICHTSOLARZELLE UND SEIN ERSTELLUNGSVERFAHREN
US20050072461A1 (en) 2003-05-27 2005-04-07 Frank Kuchinski Pinhole porosity free insulating films on flexible metallic substrates for thin film applications
JP2005105035A (ja) * 2003-09-29 2005-04-21 Asahi Schwebel Co Ltd プリプレグとその製造方法、及び積層板
US20050163968A1 (en) 2004-01-20 2005-07-28 Hanket Gregory M. Microfiller-reinforced polymer film
CN1320060C (zh) 2004-04-01 2007-06-06 中国科学院化学研究所 一种短纤维增强聚酰亚胺复合材料及制备方法和用途
JP2006028216A (ja) 2004-07-12 2006-02-02 Kaneka Corp ポリイミドフィルム及び該ポリイミドフィルムの製造方法
JP2007046045A (ja) * 2005-07-13 2007-02-22 Teijin Ltd ポリイミドフィルム基材
WO2007011742A2 (en) 2005-07-14 2007-01-25 Konarka Technologies, Inc. Cigs photovoltaic cells
TWI422913B (zh) * 2005-08-26 2014-01-11 Konica Minolta Opto Inc A thin film and a method for manufacturing the same, and a polarizing plate and a liquid crystal display device using the same
DE102006016307B4 (de) 2006-04-06 2011-07-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 80686 Thermisch stabile Matrixmikropartikel und Mikrokapseln für die Kunststoffadditivierung und Verfahren zu ihrer Herstellung und ihre Verwendung
TWI342323B (en) * 2007-01-22 2011-05-21 Chang Chun Plastics Co Ltd Thermoset resin modified polyimide resin composition
US8476735B2 (en) * 2007-05-29 2013-07-02 Taiwan Semiconductor Manufacturing Company, Ltd. Programmable semiconductor interposer for electronic package and method of forming
JP5489410B2 (ja) * 2008-02-18 2014-05-14 富士フイルム株式会社 薄膜電界効果型トランジスタおよびそれを用いた表示装置
US20120009406A1 (en) * 2008-05-20 2012-01-12 E.I. Du Pont De Nemours And Company Thermally and dimensionally stable polyimide films and methods relating thereto

Also Published As

Publication number Publication date
JP2011109108A (ja) 2011-06-02
US20110121296A1 (en) 2011-05-26
US8319299B2 (en) 2012-11-27
JP5731171B2 (ja) 2015-06-10
CN102074480B (zh) 2015-04-01
CN102074480A (zh) 2011-05-25
DE102010051851A1 (de) 2011-05-26

Similar Documents

Publication Publication Date Title
US8653512B2 (en) Thin film transistor compositions, and methods relating thereto
JP5346078B2 (ja) 熱および寸法安定性ポリイミドフィルム、ならびに、これに関する方法
KR20110056241A (ko) 박막 트랜지스터 구조체 및 그 관련 방법
US7968670B2 (en) Polyimide resin and liquid crystal alignment layer and polyimide film using the same
DE102010051850A1 (de) In Halbleiter-Packung-Anwendungen nützliche Interposerfilme und dazu in Beziehung stehende Verfahren
WO2008072914A1 (en) Polyimide resin and liquid crystal alignment layer and polyimide film using the same
JP5485847B2 (ja) 熱および寸法安定性ポリイミドフィルム、電極および光吸収層を備えるアセンブリ、ならびに、これに関する方法
JP2011109110A (ja) 光起電力構成物またはその前駆体、およびこれに関する方法
JP4940499B2 (ja) 低誘電率重合体
HK1177216A (en) Thin film transistor compositions, and methods relating thereto
HK1173849A (en) Assemblies comprising a polyimide film and an electrode, and methods relating thereto
HK1160290A (en) Interposer films useful in semiconductor packaging applications, and methods relating thereto
HK1176369A (en) Wire wrap compositions and methods relating thereto

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000