KR20110050512A - 광기전력 디바이스를 형성하는 조성물 및 공정 - Google Patents

광기전력 디바이스를 형성하는 조성물 및 공정 Download PDF

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Publication number
KR20110050512A
KR20110050512A KR20117005773A KR20117005773A KR20110050512A KR 20110050512 A KR20110050512 A KR 20110050512A KR 20117005773 A KR20117005773 A KR 20117005773A KR 20117005773 A KR20117005773 A KR 20117005773A KR 20110050512 A KR20110050512 A KR 20110050512A
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KR
South Korea
Prior art keywords
metal
reactive metal
silicon
contact
reactive
Prior art date
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Abandoned
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KR20117005773A
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English (en)
Korean (ko)
Inventor
윌리엄 보란드
존-폴 마리아
Original Assignee
이 아이 듀폰 디 네모아 앤드 캄파니
노쓰 캐롤라이나 스테이트 유니버시티
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Application filed by 이 아이 듀폰 디 네모아 앤드 캄파니, 노쓰 캐롤라이나 스테이트 유니버시티 filed Critical 이 아이 듀폰 디 네모아 앤드 캄파니
Publication of KR20110050512A publication Critical patent/KR20110050512A/ko
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
KR20117005773A 2008-08-13 2009-08-11 광기전력 디바이스를 형성하는 조성물 및 공정 Abandoned KR20110050512A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US8850408P 2008-08-13 2008-08-13
US61/088,504 2008-08-13

Publications (1)

Publication Number Publication Date
KR20110050512A true KR20110050512A (ko) 2011-05-13

Family

ID=41669606

Family Applications (1)

Application Number Title Priority Date Filing Date
KR20117005773A Abandoned KR20110050512A (ko) 2008-08-13 2009-08-11 광기전력 디바이스를 형성하는 조성물 및 공정

Country Status (7)

Country Link
US (2) US8294024B2 (https=)
EP (1) EP2324511A2 (https=)
JP (1) JP2012500472A (https=)
KR (1) KR20110050512A (https=)
CN (1) CN102119445B (https=)
TW (1) TW201019488A (https=)
WO (1) WO2010019552A2 (https=)

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US8609451B2 (en) * 2011-03-18 2013-12-17 Crystal Solar Inc. Insitu epitaxial deposition of front and back junctions in single crystal silicon solar cells
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US20120285517A1 (en) * 2011-05-09 2012-11-15 International Business Machines Corporation Schottky barrier solar cells with high and low work function metal contacts
CN103022163A (zh) * 2011-09-22 2013-04-03 比亚迪股份有限公司 一种晶硅太阳能电池及其制备方法
ZA201208283B (en) * 2011-11-04 2013-07-31 Heraeus Precious Metals North America Conshohocken Llc Organic vehicle for electroconductive paste
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WO2014097741A1 (ja) * 2012-12-20 2014-06-26 株式会社カネカ 太陽電池およびその製造方法、ならびに太陽電池モジュール
CN103311367A (zh) * 2013-05-31 2013-09-18 浙江正泰太阳能科技有限公司 一种晶体硅太阳能电池的制备方法
KR102018649B1 (ko) * 2013-06-21 2019-09-05 엘지전자 주식회사 태양 전지
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CN103545405B (zh) * 2013-11-11 2016-03-30 天津三安光电有限公司 氮化物发光二极管
CN103943167B (zh) * 2014-04-18 2016-06-08 西安交通大学 一种Ag(V,Nb)/稀土晶体硅太阳电池合金浆料及其制备方法
CN105097503B (zh) * 2014-05-13 2017-11-17 复旦大学 一种调节硅化钛/硅肖特基接触势垒的方法
JP2017532755A (ja) * 2014-08-01 2017-11-02 ザ ガバメント オブ ザ ユナイテッド ステイツ オブ アメリカ， アズ リプレゼンテッド バイ ザ セクレタリー オブ ザ ネイビー 化合物半導体デバイスのためのエピタキシャル金属の遷移金属窒化物層
US10224481B2 (en) 2014-10-07 2019-03-05 The Trustees Of The University Of Pennsylvania Mechanical forming of resistive memory devices
CN113629155B (zh) * 2021-08-06 2023-03-24 常州时创能源股份有限公司 一种晶硅太阳能电池
CN117727491B (zh) * 2024-01-31 2024-06-18 江苏富乐华功率半导体研究院有限公司 一种用于氮化硅共烧的电子浆料及其制备方法
CN118946178A (zh) * 2024-08-22 2024-11-12 滁州捷泰新能源科技有限公司 一种钙钛矿/晶体硅叠层电池及其制备方法

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Also Published As

Publication number Publication date
EP2324511A2 (en) 2011-05-25
WO2010019552A3 (en) 2010-11-18
WO2010019552A2 (en) 2010-02-18
CN102119445A (zh) 2011-07-06
US20100037942A1 (en) 2010-02-18
CN102119445B (zh) 2013-07-24
JP2012500472A (ja) 2012-01-05
US8294024B2 (en) 2012-10-23
TW201019488A (en) 2010-05-16
US20130000709A1 (en) 2013-01-03

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