KR20110015128A - Manufacturing method for organic light emitting diode display device and organic light emitting diode display substrate for being applied in the same - Google Patents

Abstract

PURPOSE: A method for manufacturing an organic light emitting display device and a substrate for forming the organic light emitting diode display device are provided to block the inputted static electricity in a scribing process by including a static electricity preventing element between a cell and a cell connection unit. CONSTITUTION: A substrate(100) includes a plurality of separated display regions for a unit panel and a unit panel cutting part. A thin film transistor array is formed on the display region for each unit panel of a substrate. A static electricity preventing element(P) is formed on the unit panel cutting part. An organic EL array is formed on each thin film transistor array. An organic EL unit panel is formed by coating sealant on the edges of the display region for each unit panel and opposing a glass cap on the organic EL array. The unit panel cutting part is divided into a plurality of unit panels through scribing and breaking.

Description

Manufacturing Method for Organic Light Emitting Diode and Substrate for Organic Light Emitting Diode Formation Substrate for Organic Light Emitting Diode Display Substrate for being applied in the Same}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting device, and more particularly, to a method of manufacturing an organic light emitting display device having an antistatic device including a cell and a cell connection part in order to block static electricity flowing in a scribing process of separating the cell and the cell. The present invention relates to a substrate for forming an organic light emitting display element.

Recently, various flat panel displays have been developed to reduce weight and volume, which are disadvantages of cathode ray tubes. Such flat panel displays include liquid crystal displays (hereinafter referred to as "LCDs"), field emission displays (FEDs), plasma display panels (hereinafter referred to as PDPs), and organic fields. Also known as an EL-Electroluminescent Display Device (or Organic Light Emitting Dioide Display Device) using a light emitting display device (Electro-luminescence Display Device): Researches are being actively conducted to increase the display quality of such flat panel display devices and to attempt to enlarge the screens.

Among them, the organic light emitting device is a self-luminous device that emits light by itself, and has an advantage of fast response speed and high luminous efficiency, brightness, and viewing angle. Such an organic light emitting element includes a thin film transistor array portion formed on a transparent substrate and an organic EL array portion located on the thin film transistor array portion. In some cases, a glass cap may be included to isolate the external environment.

Such an organic light emitting diode display is classified into top emission and bottom emission according to its emission method. In the latter bottom emission method, light is emitted to the TFT array side, and the transparent substrate on which the TFT array is located is deposited in the order of the thin film transistor T, the transparent anode, the bank, the organic EL layer, and the cathode.

Hereinafter, a method of manufacturing a conventional organic light emitting display device will be described with reference to the accompanying drawings.

1 is a plan view illustrating the inflow of static electricity in the scribing step in manufacturing a conventional organic light emitting display device, and FIG. 2 is a circuit diagram illustrating a general organic light emitting display device.

As shown in FIG. 1, a unit panel encapsulated by a sealant (not shown) and a glass cap (not shown) including a thin film transistor array and an organic EL array portion on a substrate is scribed. And breaking through a breaking process.

Here, each of the unit panels has a matrix form in which pixels P disposed in an area defined by the intersection of the gate line GL and the data line DL are respectively formed in the display area A / A therein. It has a structure arranged as. The internal wires, such as the gate line and the data line, are connected to the shorting bar 20 through pad wires 13 extending outward, and flow a signal into the shorting bar 20 to check whether the internal wires are normal. In the subsequent scribing process, the shorting bar 20 is removed to separate internal wires connected together, and the pad wire 13 at one end of the internal wires is connected to a driving driver (not shown). . The shorting bar 20 not only checks the signal, but also induces an equipotential of the connected wiring in a pre-scribing process, and primarily blocks static electricity generated during the process.

Each of these unit panels has pixels P arranged in a matrix in the display area A / A therein, and each of the pixels P has data when a gate pulse is supplied to the gate line GL. The data signal from the line DL is supplied to generate light corresponding to the data signal.

To this end, each of the pixels P includes an organic EL cell EL having a cathode connected to the ground power supply line 12 (GND), a gate line GL, a data line DL, and a power supply voltage line 11. And a cell driver 60 connected to the VDD and connected to the anode of the organic EL cell EL to drive the organic EL cell EL. The cell driver 60 includes a switching thin film transistor T1, a driving thin film transistor T2, and a capacitor C.

The switching thin film transistor T1 is turned on when a scan pulse is supplied to the gate line GL, and supplies the data signal supplied to the data line DL to the first node N1. The data signal supplied to the first node N1 is charged to the capacitor C and supplied to the gate terminal of the driving thin film transistor T2. The driving thin film transistor T2 controls the amount of current I supplied from the power supply voltage line 11 (VDD) to the organic EL cell EL in response to the data signal supplied to the gate terminal. The amount of light emitted is controlled. Since the data signal is discharged from the capacitor C even when the switching thin film transistor T1 is turned off, the driving thin film transistor T2 is a current from the supply voltage source VDD until the data signal of the next frame is supplied. (I) is supplied to the organic EL cell EL so that the organic EL cell EL maintains light emission.

On the other hand, the organic light emitting display device, during the manufacturing process, the static influx (A) is severe in the scribing step, the static electricity enters the adjacent wiring, etc. to destroy the device in the encapsulated unit organic cell, Defects appear.

Particularly, in the unit panel and the unit panel and the connection portion of the side where the shorting bar 20 is not formed, static electricity is directly introduced and is vulnerable to static electricity. Accordingly, the static electricity destroys adjacent pixels to cause dark spots or bright point defects. Or, in severe cases, the static electricity may cause a short circuit of the corresponding line, which causes line failure. When the unit organic cell sealed by this is bad in driving, and a dark point, a bright point, or a line defect is severe, this unit organic cell will have to be discarded, and such static electricity is the biggest factor which reduces product yield.

The conventional method of manufacturing the organic light emitting display device has the following problems.

The OLED display requires at least three or more driving elements for each pixel in the matrix of the display unit, a gate line, a data line, a power supply voltage line, a ground voltage line, and the like to which a signal is applied. In order to operate the organic light emitting diode, a high current is required.

To this end, the organic light emitting diode display is more susceptible to heat generation or static electricity than other display apparatuses. In particular, when an instantaneous high voltage is applied, such as a scribing process, wirings adjacent to the unit panel and the unit panel and the connection portion are provided. The static electricity directly enters and easily affects, thus increasing the risk of damage.

In addition, even if the shorting bar induces an equipotential and primarily blocks static electricity, the unit panel, the unit panel, and the connection part corresponding to the scribing line on the side where the shorting bar is not formed are largely directly damaged by static electricity.

In particular, even after scribing, external static electricity may be generated instantaneously when adsorption of the panel or when the panel is lifted into the vacuum chuck. In this case, there is no provision for static electricity due to the removal of the shorting bar. Display element panel) cannot be protected.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems and to manufacture an organic light emitting display device having an antistatic device having a cell and a cell connection part in order to block static electricity flowing in the scribing process of separating the cell from the cell. It is an object of the present invention to provide a method and a substrate for forming an organic light emitting display device.

According to an aspect of the present invention, there is provided a method of manufacturing an organic light emitting display device, the method comprising: preparing a plurality of spaced unit panel display regions and a substrate in which a unit panel cutout is defined outside the display region; Forming a thin film transistor array in each unit panel display area of the substrate and an antistatic element in the unit panel cutout; forming an organic EL array on each of the thin film transistor arrays; Applying a sealant surrounding an edge of the display area for the panel, and forming an organic EL unit panel by opposing a glass cap on the organic EL array; And scribing and breaking the unit panel cutout to separate the unit panel into a plurality of unit panels.

Here, the forming of the antistatic device may be formed by electrically connecting the semiconductor layer pattern and the at least one metal layer to each other.

The forming of the antistatic element may include forming the semiconductor layer pattern and at least one metal layer connected to both sides of the unit panel cutout symmetrically to function as a diode, and to form diodes on both sides of the unit panel cutout. Link them together.

The thin film transistor array may include a plurality of gate lines and data lines intersecting each other in a display area for a unit panel on the substrate, a gate electrode and a protective layer formed thereon through a semiconductor layer and a gate insulating film. A first thin film transistor formed at an intersection of the gate line and the data line and a second thin film transistor connected to the organic light emitting array, the first thin film transistor having a source electrode and a drain electrode formed thereon; A power supply voltage line supplying a power supply voltage to the second thin film transistor; And a ground voltage line for supplying a ground voltage to the organic EL array.

In this case, the antistatic element is connected to both sides of the semiconductor layer pattern; a semiconductor layer pattern on the same layer as the semiconductor layer, a gate insulating film and a protective film on the semiconductor layer pattern, and on the protective film, And a metal layer pattern formed by being connected from a power supply voltage line.

The antistatic device of another embodiment may further include a semiconductor layer pattern in the same layer as the semiconductor layer, a gate insulating film on the semiconductor layer pattern, and a semiconductor layer pattern on the gate insulating film on the same layer as the gate line. A gate metal pattern spaced apart from the gate metal pattern; a protective film formed on the gate insulating layer to cover the gate metal pattern; and the power supply voltage connected to both sides of the gate metal pattern and the semiconductor layer pattern. Characterized in that it comprises a metal pattern formed by connecting from the line.

In addition, the substrate for forming an organic light emitting display device of the present invention for achieving the same object, a plurality of spaced unit panel display area, a substrate having a unit panel cut portion defined outside the display area; A thin film transistor array formed in each unit panel display area, and an antistatic element formed in the unit panel cutout; And an organic EL array formed on each of the thin film transistor arrays, wherein the antistatic element is formed by electrically connecting a semiconductor layer pattern and at least one metal layer to each other.

Here, the semiconductor layer pattern and at least one metal layer are connected to be adjacent to a boundary of the unit panel cutout so as to function as a diode.

In this case, it is preferable that the diodes on both sides of the unit panel cutout are formed to be electrically connected to each other.

The antistatic element is formed together in forming the thin film transistor array.

As described above, the method for manufacturing the organic light emitting diode display and the substrate for forming the organic light emitting diode display used therein have the following effects.

In order to block static electricity in the unit panel and the unit panel and the connection portion, a thin film transistor having a diode function is formed in the form of being connected to the power supply voltage line at the same time in the process of forming the thin film transistor of the organic light emitting display element. In this case, the formed antistatic thin film transistor has a connection relationship between metal / semiconductor layer / metal, and the antistatic thin film transistor acts as one resistor. Accordingly, the static electricity coming from the outside can pass into the panel only through the antistatic element, and when only low level of static electricity passes or excessive static electricity is introduced, the semiconductor layer of the antistatic element is destroyed, To block static electricity from entering the area.

Accordingly, external static electricity can be blocked even at the instantaneous high pressure in the scribing process, thereby preventing damage to the product due to static electricity. In addition, the antistatic element remaining near the panel cutout after scribing may block the inflow of external static electricity generated in the process line to protect the display area inside the panel.

Hereinafter, a method of manufacturing an organic light emitting display device and a substrate for forming an organic light emitting display device used therein will be described with reference to the accompanying drawings.

3 is a plan view illustrating an antistatic device for preventing static electricity from flowing in during a scribing step in manufacturing an organic light emitting display device of the present invention, and FIG. 4 is a diagram illustrating an internal configuration of a unit organic light emitting display device of the present invention.

3 and 4, each of the unit panels forming the organic light emitting diode display according to the present invention has a gate line 121 (GL) and a data line 122 (in the display area A / A therein). Pixels P (see FIG. 2) provided in regions defined by intersections of DLs are arranged in a matrix form.

The internal wires such as the gate line 121 and the data line 122 are connected to the shorting bar 180 through pad wires 170 (171 and 172) extending outwards, and signal to the shorting bar 180. Injecting the internal wiring to determine whether the internal wiring is normal, and in the subsequent scribing process, the shorting bar 180 is removed to separate the internal wirings connected together, and the pad wiring 170 at one end of these internal wirings. To a driving driver (not shown). The shorting bar 180 not only checks the signal but also induces an equipotential of the connected wiring in the pre-scribing process, and primarily blocks static electricity generated during the process.

In addition, power supply voltage lines 110a and 110b are formed around the display area and intersect the power supply voltage line 110b to form a ground voltage line 120. It is connected with the corresponding power supply voltage line and ground voltage line.

Then, the antistatic element P is formed at a connection portion between the unit panel and the unit panel on the side where the shorting bar 180 is not formed. In some cases, an antistatic device may be formed in the same manner on the side where the shorting bar 180 is formed.

Here, the antistatic device P may have a semiconductor layer pattern 105 disposed in an island shape on both sides of a scribing line between the unit panel and the unit panel, and the power voltage line contacted on both sides of the semiconductor layer pattern 105. The metal pattern 210a extends from 110b in a direction passing through the connection portion between the unit panel and the unit panel. In this case, the metal pattern 210a is integrally formed with the power voltage line 110b and overlaps with one side of the semiconductor layer pattern 105 at one side, and is separated from the center of the semiconductor layer pattern 105 at one side. The semiconductor layer pattern 105 and the metal pattern 210a are formed to be spaced apart from each other and overlap with the other side of the semiconductor layer pattern 105 on one side. It is formed symmetrically on the border of the panel cutout).

Here, each of the unit panels divided by the scribing line has a plurality of pixels P arranged in a matrix form in the display area A / A therein, and each of the pixels P may include a gate line ( When the gate pulse is supplied to the driver 121 through a driving driver (not shown) (B of FIG. 3), the data signal from the data line 122 is supplied to generate light corresponding to the data signal.

To this end, referring to FIG. 2, each of the pixels P may include an organic EL cell EL having a cathode connected to a ground power supply line GND, a gate line GL, a data line DL, and a power supply voltage. A cell driver 60 is connected to the line VDD and connected to the anode of the organic EL cell EL to drive the organic EL cell EL. The cell driver 60 includes a switching thin film transistor T1, a driving thin film transistor T2, and a capacitor C.

The switching thin film transistor T1 is turned on when a scan pulse is supplied to the gate line GL, and supplies a data signal supplied to the data line DL to the first node N1. The data signal supplied to the first node N1 is charged to the capacitor C and supplied to the gate terminal of the driving thin film transistor T2. The driving thin film transistor T2 controls the amount of light emitted from the power supply voltage line VDD to the organic EL cell EL in response to the data signal supplied to the gate terminal to reduce the amount of light emitted from the organic EL cell EL. Will be adjusted. Since the data signal is discharged from the capacitor C even when the switching thin film transistor T1 is turned off, the driving thin film transistor T2 is a current from the supply voltage source VDD until the data signal of the next frame is supplied. (I) is supplied to the organic EL cell EL so that the organic EL cell EL maintains light emission.

Specifically, referring to the method of manufacturing the organic light emitting diode display of the present invention, first, a plurality of spaced unit panel display areas and a substrate (a mother substrate) in which unit panel cutouts (scribe lines) are defined outside the display area Prepare (100).

Subsequently, a thin film transistor array (not shown) and an antistatic device P are formed in the unit panel cutout in each unit panel display area of the substrate. The forming of the antistatic device may be performed by electrically connecting a semiconductor layer pattern and at least one metal pattern to each other. At least one of the metal patterns connected to the semiconductor layer pattern is formed on the power supply voltage lines 110 (110a and 110b). In particular, the power supply voltage line 110b extending to the unit panel cutout is a metal of the same layer as the data line.

The forming of the antistatic element may include forming the semiconductor layer pattern and at least one metal pattern symmetrically connected to both sides of the unit panel cutout (scribing line) so as to function as a diode. The diodes on both sides of the unit panel cutout are connected to each other.

Next, an organic EL array (not shown) is formed on each of the thin film transistor arrays.

Subsequently, a sealant (not shown) surrounding the edge of each unit panel display area is applied, and an organic EL unit panel is formed by facing a glass cap (not shown) on the organic EL array.

Subsequently, the unit panel cut part is scribed and broken to separate the plurality of unit panels.

Here, if the static electricity is generated in the scribing and breaking step during the manufacturing method of the organic light emitting diode display of the present invention, the antistatic device sequentially passes through the metal layer / semiconductor layer / metal layer therein, and only weak static electricity When permeable or when a momentary strong high-voltage current flows, the semiconductor layer is destroyed and static electricity is prevented from flowing into the boundary.

Hereinafter, the formation method of the said antistatic element is demonstrated concretely.

5 is a cross-sectional view and a corresponding plan view of the antistatic device formed when the organic light emitting diode display according to the first exemplary embodiment of the present invention is manufactured.

As shown in FIG. 5, the antistatic element formed during fabrication of the organic light emitting diode display according to the first exemplary embodiment of the present invention is formed in the same process as the thin film transistor forming process on the substrate, and is formed on a predetermined portion on the substrate 100. A semiconductor layer pattern 105 of a silicon layer component, a gate insulating layer 106 formed on the substrate 100 and covering the semiconductor layer pattern 105, and a protective layer 108 formed on the gate insulating layer 106. ), A contact hole formed by exposing the both sides of the semiconductor layer pattern 105 by removing the protective film and the gate insulating layer 106 by a predetermined width, and filling the inside of the contact hole, and both sides of the semiconductor layer pattern 105. The metal pattern 210a partially overlaps the upper portion. Here, as described above, the metal pattern 210a is a metal extending from the power voltage lines 110 (110a and 110b) formed at the outside of the display area, and is formed on the same layer as the data line, for example.

The antistatic device described above has a diode function in which current flows in one direction, and is formed together in the same layers in the manufacture of a thin film transistor, and the current flows in the order of metal / semiconductor layer / metal, and thus The thin film transistor acts as a resistor.

In particular, the antistatic device of the present invention can block the static electricity inflow rate by sequentially providing a metal having a high electrical mobility and a relatively low semiconductor layer. In addition, the static electricity coming from the outside can pass through the antistatic device to enter the panel, when only a low level of static electricity, or when the static electricity flows, the semiconductor layer of the antistatic device is destroyed, Will block.

Accordingly, external static electricity can be blocked even at the instantaneous high pressure in the scribing process, thereby preventing damage to the product due to static electricity.

6 is a cross-sectional view illustrating an antistatic device formed when manufacturing an organic light emitting diode display according to a second exemplary embodiment of the present invention.

As shown in FIG. 6, the antistatic device formed during fabrication of the organic light emitting diode display according to the second exemplary embodiment of the present invention is formed in the same process as the thin film transistor forming process on the substrate, as described above. Compared with that, the gate metal pattern 107 is further formed at both ends of the antistatic device.

That is, the organic light emitting diode display according to the second embodiment of the present invention covers the semiconductor layer pattern 105 and the semiconductor layer pattern 105 of the polysilicon layer component formed on a predetermined portion on the substrate 100, A gate insulating layer 106 formed on the substrate 100, a gate metal pattern 107 formed on the gate insulating layer 106 and spaced apart from both ends of the semiconductor layer pattern 105, and the gate metal pattern ( 107 covering the protection layer 108 formed on the gate insulating layer 106, and removing the predetermined width of the protection layer 108 and the gate insulating layer 106 to expose both sides of the semiconductor layer pattern 105. Filling a first contact hole and a second contact hole in which the gate metal pattern 107 is exposed to a predetermined width, and filling the first and second contact holes, and partially overlapping the upper portions of both sides of the semiconductor layer pattern 105. A metal pattern overlapping the gate metal pattern 107 And 310a.

The antistatic device according to the second embodiment of the present invention has a diode function in which current flows in one direction, and is formed together in the same layers in the manufacture of a thin film transistor, and the current flows through a metal (metal pattern 310a, The gate metal pattern 107, the semiconductor layer pattern 105, the gate metal pattern 107, and the metal pattern 310a flow in the order of the gate metal pattern 107. More lightly, it is possible to more effectively block the inflow of static electricity than in the above-described first embodiment. At this time, the antistatic element is to act as a resistor.

7 is a cross sectional view showing the structure of a unit cell in an antistatic element and an active area (display area) of the present invention.

FIG. 7 shows that the antistatic element of the present invention is formed in the same process as a unit cell in an active area (display area), and shows, as an example, a first embodiment of the present invention.

That is, the semiconductor layer pattern 105 is formed on the same layer as the semiconductor layer 115 in the active region, and the metal pattern 210a is formed on both sides of the source electrode 104a and the semiconductor layer 115 in the active region. It is formed by the same patterning of the same layer as the drain electrode 104b. In this case, the difference is that the gate electrode 102 is further formed on the gate insulating layer 106 in correspondence between the source electrode 104a and the drain electrode 104b to form a thin film transistor for driving in the active region. It is a point.

The thin film transistor for driving in the active region overlaps the semiconductor layer 115, the gate electrode 102 on the semiconductor layer 115, and both sides of the semiconductor layer 115. And a source electrode 104a and a drain electrode 104b formed on the 115.

Next, one side of the drain electrode 104b is connected to the anode 111, and the driving thin film transistor on the protective film 108 including the anode 111, the source electrode 104a, and the drain electrode 104b. Corresponding to the bank 112 formed of an organic insulating film having a predetermined height, an organic light emitting layer 113 for emitting light between the banks 112, and a cathode formed on the banks 112 and the organic light emitting layer 113. 114).

FIG. 7 illustrates a state in which a sealant is applied to an outer periphery of the display area A / A in a state before a glass cap for encapsulation is formed on the substrate 100. Opposing the formation surface of the organic light emitting layer 113 of A), a glass cap (not shown) including a moisture absorber (getter) is further formed to form an organic light emitting device panel.

On the other hand, the present invention described above is not limited to the above-described embodiment and the accompanying drawings, it is possible that various substitutions, modifications and changes within the scope without departing from the technical spirit of the present invention. It will be apparent to those of ordinary skill in Esau.

1 is a plan view illustrating the inflow of static electricity in the scribing step in manufacturing a conventional organic light emitting display device

2 is a circuit diagram illustrating a general organic light emitting display device.

3 is a plan view illustrating an antistatic device for preventing static electricity from flowing in during a scribing step in manufacturing an organic light emitting display device of the present invention.

4 is a diagram illustrating an internal configuration of a unit organic light emitting display device according to the present invention.

5 is a cross-sectional view and a corresponding plan view of the antistatic device formed when the organic light emitting diode display device according to the first exemplary embodiment of the present invention is manufactured.

6 is a cross-sectional view illustrating an antistatic device formed when manufacturing an organic light emitting display device according to a second exemplary embodiment of the present invention.

7 is a process sectional view showing the configuration of the antistatic element and the unit cell in the active region of the present invention.

* Description of the symbols for the main parts of the drawings *

100 substrate 102 gate electrode

105: semiconductor layer pattern 106: gate insulating film

107: gate metal pattern 108: protective film

110: power supply voltage line 111: anode

112: bank 113: organic light emitting layer

114: cathode 120: ground voltage line

121: gate line 122: data line

170: dummy line 171: data dummy line

172: gate dummy lines 210a and 310a: metal pattern

Claims (10)

Preparing a plurality of spaced unit panel display areas and a substrate in which unit panel cutouts are defined outside the display area; Forming a thin film transistor array in each unit panel display area of the substrate and an antistatic element in the unit panel cutout; Forming an organic EL array on each of the thin film transistor arrays; Applying a sealant surrounding an edge of the display area for each unit panel, and forming an organic EL unit panel by opposing a glass cap on the organic EL array; And And scribing and breaking the unit panel cutout to separate the unit panel into a plurality of unit panels. The method of claim 1, Forming the antistatic element, A method of manufacturing an organic light emitting display device, characterized in that the semiconductor layer pattern and at least one metal layer are electrically connected to each other. 3. The method of claim 2, Forming the antistatic element, Organic light emitting diodes characterized in that the semiconductor layer pattern and at least one metal layer are symmetrically connected to both sides of the unit panel cutout so as to function as a diode, and the diodes of both sides of the unit panel cutout are connected to each other. The manufacturing method of a display element. The method of claim 1, The thin film transistor array, A plurality of gate lines and data lines crossing each other in a display area for a unit panel on the substrate; A first thin film transistor formed at an intersection of the gate line and the data line, the first thin film transistor comprising a semiconductor layer, a gate electrode formed thereon through a gate insulating film, and a source electrode and a drain electrode formed thereon through a protective film; A second thin film transistor connected to the thin film transistor and connected to the organic light emitting array; A power supply voltage line supplying a power supply voltage to the second thin film transistor; And And a ground voltage line for supplying a ground voltage to the organic EL array. The method of claim 4, wherein The antistatic element, A semiconductor layer pattern on the same layer as the semiconductor layer; A gate insulating film and a protective film on the semiconductor layer pattern; And a metal layer pattern connected to both sides of the semiconductor layer pattern and formed on the passivation layer, the metal layer pattern being connected from the power supply voltage line. The method of claim 4, wherein The antistatic element, A semiconductor layer pattern on the same layer as the semiconductor layer; A gate insulating film on the semiconductor layer pattern; A gate metal pattern formed on the same layer as the gate line and spaced apart from the semiconductor layer pattern on a gate insulating layer; A passivation layer covering the gate metal pattern and formed on the gate insulating layer; And a metal pattern connected to both sides of the gate metal pattern and the semiconductor layer pattern, the metal pattern being connected to the protective layer from the power supply voltage line. A substrate having a plurality of spaced unit panel display areas and a unit panel cutout portion defined outside the display area; A thin film transistor array formed in each unit panel display area of the substrate, and an antistatic element formed in the unit panel cutout; And It comprises an organic EL array formed on each thin film transistor array, The antistatic device may be formed by electrically connecting a semiconductor layer pattern and at least one metal layer to each other. The method of claim 7, wherein And the semiconductor layer pattern and at least one metal layer are connected to a boundary of the unit panel cutout to function as a diode. The method of claim 8, A substrate for forming an organic light emitting display element, wherein the diodes at both sides of the unit panel cutout portion are electrically connected to each other. The method of claim 7, wherein And the antistatic device is formed together with the thin film transistor array.

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