KR20110006677A - 이미지 센서 및 잔여 비-이미지 전하 배출 방법 - Google Patents

이미지 센서 및 잔여 비-이미지 전하 배출 방법 Download PDF

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Publication number
KR20110006677A
KR20110006677A KR1020107025157A KR20107025157A KR20110006677A KR 20110006677 A KR20110006677 A KR 20110006677A KR 1020107025157 A KR1020107025157 A KR 1020107025157A KR 20107025157 A KR20107025157 A KR 20107025157A KR 20110006677 A KR20110006677 A KR 20110006677A
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KR
South Korea
Prior art keywords
charge
image
shift register
charge storage
storage region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020107025157A
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English (en)
Korean (ko)
Inventor
에릭 존 메이센잘
Original Assignee
이스트맨 코닥 캄파니
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Application filed by 이스트맨 코닥 캄파니 filed Critical 이스트맨 코닥 캄파니
Publication of KR20110006677A publication Critical patent/KR20110006677A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/626—Reduction of noise due to residual charges remaining after image readout, e.g. to remove ghost images or afterimages
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020107025157A 2008-05-09 2009-05-07 이미지 센서 및 잔여 비-이미지 전하 배출 방법 Withdrawn KR20110006677A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/118,131 2008-05-09
US12/118,131 US8134630B2 (en) 2008-05-09 2008-05-09 System and method for draining residual charge from charge-coupled device (CCD) shift registers in image sensors having reset drains

Publications (1)

Publication Number Publication Date
KR20110006677A true KR20110006677A (ko) 2011-01-20

Family

ID=40983322

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107025157A Withdrawn KR20110006677A (ko) 2008-05-09 2009-05-07 이미지 센서 및 잔여 비-이미지 전하 배출 방법

Country Status (6)

Country Link
US (1) US8134630B2 (enExample)
EP (1) EP2301073B1 (enExample)
JP (1) JP2011524659A (enExample)
KR (1) KR20110006677A (enExample)
CN (1) CN102017155B (enExample)
WO (1) WO2009137079A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180031060A (ko) * 2015-08-14 2018-03-27 케이엘에이-텐코 코포레이션 저 노이즈 센서를 이용한 암시야 검사

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108174116B (zh) * 2017-12-28 2019-11-15 中国科学院西安光学精密机械研究所 一种ccd曝光时间控制方法
US11494628B2 (en) * 2018-03-02 2022-11-08 Aistorm, Inc. Charge domain mathematical engine and method
CN113661536B (zh) * 2020-01-21 2023-01-31 京东方科技集团股份有限公司 电子装置、驱动方法和采集方法
CN112383726B (zh) * 2020-10-30 2021-07-23 厦门大学 一种ccd高速信号采集方法和装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4593303A (en) * 1981-07-10 1986-06-03 Fairchild Camera & Instrument Corporation Self-aligned antiblooming structure for charge-coupled devices
DE69410147T2 (de) 1993-03-03 1998-12-03 Philips Electronics N.V., Eindhoven Ladungsgekoppelte Anordnung
JP3213529B2 (ja) * 1995-11-30 2001-10-02 三洋電機株式会社 撮像装置
US6693671B1 (en) 2000-03-22 2004-02-17 Eastman Kodak Company Fast-dump structure for full-frame image sensors with lod antiblooming structures
JP4338298B2 (ja) * 2000-10-04 2009-10-07 富士フイルム株式会社 電荷転送装置およびその駆動方法
JP2002335450A (ja) * 2001-05-09 2002-11-22 Fuji Film Microdevices Co Ltd 固体撮像素子の駆動方法および固体撮像素子
JP3795808B2 (ja) * 2002-01-28 2006-07-12 富士フイルムマイクロデバイス株式会社 固体撮像素子およびこれを用いた撮像装置
US7492404B2 (en) * 2004-08-27 2009-02-17 Eastman Kodak Company Fast flush structure for solid-state image sensors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180031060A (ko) * 2015-08-14 2018-03-27 케이엘에이-텐코 코포레이션 저 노이즈 센서를 이용한 암시야 검사

Also Published As

Publication number Publication date
CN102017155B (zh) 2013-07-17
EP2301073A1 (en) 2011-03-30
US8134630B2 (en) 2012-03-13
EP2301073B1 (en) 2014-11-19
CN102017155A (zh) 2011-04-13
JP2011524659A (ja) 2011-09-01
WO2009137079A1 (en) 2009-11-12
US20090278971A1 (en) 2009-11-12

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