JP2011524659A - （ｃｃｄ）シフトレジスタ内残留電荷排出 - Google Patents

（ｃｃｄ）シフトレジスタ内残留電荷排出 Download PDF

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Publication number
JP2011524659A
JP2011524659A JP2011508509A JP2011508509A JP2011524659A JP 2011524659 A JP2011524659 A JP 2011524659A JP 2011508509 A JP2011508509 A JP 2011508509A JP 2011508509 A JP2011508509 A JP 2011508509A JP 2011524659 A JP2011524659 A JP 2011524659A
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JP
Japan
Prior art keywords
charge
shift register
image
ccd shift
reset drain
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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JP2011508509A
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English (en)
Japanese (ja)
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JP2011524659A5 (enExample
Inventor
エリック ジョン マイセンザウル
Original Assignee
イーストマン コダック カンパニー
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Application filed by イーストマン コダック カンパニー filed Critical イーストマン コダック カンパニー
Publication of JP2011524659A publication Critical patent/JP2011524659A/ja
Publication of JP2011524659A5 publication Critical patent/JP2011524659A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/626—Reduction of noise due to residual charges remaining after image readout, e.g. to remove ghost images or afterimages
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2011508509A 2008-05-09 2009-05-07 （ｃｃｄ）シフトレジスタ内残留電荷排出 Pending JP2011524659A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/118,131 2008-05-09
US12/118,131 US8134630B2 (en) 2008-05-09 2008-05-09 System and method for draining residual charge from charge-coupled device (CCD) shift registers in image sensors having reset drains
PCT/US2009/002843 WO2009137079A1 (en) 2008-05-09 2009-05-07 Draining residual charge from (ccd) shift registers

Publications (2)

Publication Number Publication Date
JP2011524659A true JP2011524659A (ja) 2011-09-01
JP2011524659A5 JP2011524659A5 (enExample) 2012-06-21

Family

ID=40983322

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011508509A Pending JP2011524659A (ja) 2008-05-09 2009-05-07 （ｃｃｄ）シフトレジスタ内残留電荷排出

Country Status (6)

Country Link
US (1) US8134630B2 (enExample)
EP (1) EP2301073B1 (enExample)
JP (1) JP2011524659A (enExample)
KR (1) KR20110006677A (enExample)
CN (1) CN102017155B (enExample)
WO (1) WO2009137079A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10462391B2 (en) * 2015-08-14 2019-10-29 Kla-Tencor Corporation Dark-field inspection using a low-noise sensor
CN108174116B (zh) * 2017-12-28 2019-11-15 中国科学院西安光学精密机械研究所 一种ccd曝光时间控制方法
US11494628B2 (en) * 2018-03-02 2022-11-08 Aistorm, Inc. Charge domain mathematical engine and method
CN113661536B (zh) * 2020-01-21 2023-01-31 京东方科技集团股份有限公司 电子装置、驱动方法和采集方法
CN112383726B (zh) * 2020-10-30 2021-07-23 厦门大学 一种ccd高速信号采集方法和装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002112122A (ja) * 2000-10-04 2002-04-12 Fuji Film Microdevices Co Ltd 電荷転送装置、ｃｃｄイメージセンサおよびｃｃｄ撮像システム
JP2002335450A (ja) * 2001-05-09 2002-11-22 Fuji Film Microdevices Co Ltd 固体撮像素子の駆動方法および固体撮像素子
JP2003224255A (ja) * 2002-01-28 2003-08-08 Fuji Film Microdevices Co Ltd 固体撮像素子およびこれを用いた撮像装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4593303A (en) * 1981-07-10 1986-06-03 Fairchild Camera & Instrument Corporation Self-aligned antiblooming structure for charge-coupled devices
DE69410147T2 (de) 1993-03-03 1998-12-03 Philips Electronics N.V., Eindhoven Ladungsgekoppelte Anordnung
JP3213529B2 (ja) * 1995-11-30 2001-10-02 三洋電機株式会社 撮像装置
US6693671B1 (en) 2000-03-22 2004-02-17 Eastman Kodak Company Fast-dump structure for full-frame image sensors with lod antiblooming structures
US7492404B2 (en) * 2004-08-27 2009-02-17 Eastman Kodak Company Fast flush structure for solid-state image sensors

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002112122A (ja) * 2000-10-04 2002-04-12 Fuji Film Microdevices Co Ltd 電荷転送装置、ｃｃｄイメージセンサおよびｃｃｄ撮像システム
JP2002335450A (ja) * 2001-05-09 2002-11-22 Fuji Film Microdevices Co Ltd 固体撮像素子の駆動方法および固体撮像素子
JP2003224255A (ja) * 2002-01-28 2003-08-08 Fuji Film Microdevices Co Ltd 固体撮像素子およびこれを用いた撮像装置

Also Published As

Publication number Publication date
CN102017155B (zh) 2013-07-17
EP2301073A1 (en) 2011-03-30
US8134630B2 (en) 2012-03-13
EP2301073B1 (en) 2014-11-19
KR20110006677A (ko) 2011-01-20
CN102017155A (zh) 2011-04-13
WO2009137079A1 (en) 2009-11-12
US20090278971A1 (en) 2009-11-12

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