CN102017155B - 从(ccd)移位寄存器排出剩余电荷 - Google Patents

从(ccd)移位寄存器排出剩余电荷 Download PDF

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Publication number
CN102017155B
CN102017155B CN200980115859.4A CN200980115859A CN102017155B CN 102017155 B CN102017155 B CN 102017155B CN 200980115859 A CN200980115859 A CN 200980115859A CN 102017155 B CN102017155 B CN 102017155B
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CN
China
Prior art keywords
shift register
storage region
charge storage
charge
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200980115859.4A
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English (en)
Chinese (zh)
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CN102017155A (zh
Inventor
E·J·梅森萨勒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Components Industries LLC
Original Assignee
Chu Saisi Imaging Co ltd
Eastman Kodak Co
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Application filed by Chu Saisi Imaging Co ltd, Eastman Kodak Co filed Critical Chu Saisi Imaging Co ltd
Publication of CN102017155A publication Critical patent/CN102017155A/zh
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Publication of CN102017155B publication Critical patent/CN102017155B/zh
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/626—Reduction of noise due to residual charges remaining after image readout, e.g. to remove ghost images or afterimages
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN200980115859.4A 2008-05-09 2009-05-07 从(ccd)移位寄存器排出剩余电荷 Expired - Fee Related CN102017155B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/118,131 2008-05-09
US12/118,131 US8134630B2 (en) 2008-05-09 2008-05-09 System and method for draining residual charge from charge-coupled device (CCD) shift registers in image sensors having reset drains
PCT/US2009/002843 WO2009137079A1 (en) 2008-05-09 2009-05-07 Draining residual charge from (ccd) shift registers

Publications (2)

Publication Number Publication Date
CN102017155A CN102017155A (zh) 2011-04-13
CN102017155B true CN102017155B (zh) 2013-07-17

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980115859.4A Expired - Fee Related CN102017155B (zh) 2008-05-09 2009-05-07 从(ccd)移位寄存器排出剩余电荷

Country Status (6)

Country Link
US (1) US8134630B2 (enExample)
EP (1) EP2301073B1 (enExample)
JP (1) JP2011524659A (enExample)
KR (1) KR20110006677A (enExample)
CN (1) CN102017155B (enExample)
WO (1) WO2009137079A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10462391B2 (en) * 2015-08-14 2019-10-29 Kla-Tencor Corporation Dark-field inspection using a low-noise sensor
CN108174116B (zh) * 2017-12-28 2019-11-15 中国科学院西安光学精密机械研究所 一种ccd曝光时间控制方法
US11494628B2 (en) * 2018-03-02 2022-11-08 Aistorm, Inc. Charge domain mathematical engine and method
CN113661536B (zh) * 2020-01-21 2023-01-31 京东方科技集团股份有限公司 电子装置、驱动方法和采集方法
CN112383726B (zh) * 2020-10-30 2021-07-23 厦门大学 一种ccd高速信号采集方法和装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4593303A (en) * 1981-07-10 1986-06-03 Fairchild Camera & Instrument Corporation Self-aligned antiblooming structure for charge-coupled devices
EP0614225A1 (en) * 1993-03-03 1994-09-07 Koninklijke Philips Electronics N.V. Charge coupled device
US6040859A (en) * 1995-11-30 2000-03-21 Sanyo Electric Co., Ltd. Image sensing apparatus and method for discharging dark current charge stored therein
EP1137071A2 (en) * 2000-03-22 2001-09-26 Eastman Kodak Company Fast-dump structure for full-frame image sensors with lateral overflow drain antiblooming structures

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4338298B2 (ja) * 2000-10-04 2009-10-07 富士フイルム株式会社 電荷転送装置およびその駆動方法
JP2002335450A (ja) * 2001-05-09 2002-11-22 Fuji Film Microdevices Co Ltd 固体撮像素子の駆動方法および固体撮像素子
JP3795808B2 (ja) * 2002-01-28 2006-07-12 富士フイルムマイクロデバイス株式会社 固体撮像素子およびこれを用いた撮像装置
US7492404B2 (en) * 2004-08-27 2009-02-17 Eastman Kodak Company Fast flush structure for solid-state image sensors

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4593303A (en) * 1981-07-10 1986-06-03 Fairchild Camera & Instrument Corporation Self-aligned antiblooming structure for charge-coupled devices
EP0614225A1 (en) * 1993-03-03 1994-09-07 Koninklijke Philips Electronics N.V. Charge coupled device
US6040859A (en) * 1995-11-30 2000-03-21 Sanyo Electric Co., Ltd. Image sensing apparatus and method for discharging dark current charge stored therein
EP1137071A2 (en) * 2000-03-22 2001-09-26 Eastman Kodak Company Fast-dump structure for full-frame image sensors with lateral overflow drain antiblooming structures

Also Published As

Publication number Publication date
EP2301073A1 (en) 2011-03-30
US8134630B2 (en) 2012-03-13
EP2301073B1 (en) 2014-11-19
KR20110006677A (ko) 2011-01-20
CN102017155A (zh) 2011-04-13
JP2011524659A (ja) 2011-09-01
WO2009137079A1 (en) 2009-11-12
US20090278971A1 (en) 2009-11-12

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