KR20100071708A - Thin film transistor substrate and organic light emitting display device using the same - Google Patents

Abstract

PURPOSE: A thin film transistor substrate and an organic light emitting display device using the same are provided to improve display quality by minimizing capacitance deviation between two electrodes to form a capacitor. CONSTITUTION: A gate(101) and a first electrode(105) are formed on a substrate. A first insulation layer(112) is formed on the gate and the first electrode. An active layer(113) is formed on the first insulation layer. A source(114a) and a drain(114b) are contacted with the active layer on the first insulation layer. A second electrode(114c) is connected to the source or drain. A second insulation layer(115) is located on the source, the drain, and the second electrode.

Description

Thin Film Transistor Substrate and Organic Light Emitting Display Device using the same}

Embodiments of the present invention relate to a thin film transistor substrate and an organic light emitting display device using the same.

With the development of information technology, the market for a display device, which is a connection medium between a user and information, is growing. Accordingly, flat panel displays (FPDs), such as liquid crystal displays (LCDs), organic light emitting diodes (OLEDs), and plasma display panels (PDPs), may be used. Usage is increasing. Among them, a liquid crystal display device capable of realizing high resolution and capable of large size as well as small size is widely used.

Some of the display devices as described above may be driven by data stored in the thin film transistor and the capacitor formed on the substrate to represent an image. The thin film transistor may include a gate, a semiconductor layer, a source, and a drain formed on the substrate, and the capacitor may include an insulating layer positioned between the gate, the source, and the drain of the thin film transistor.

A display device driven by using a thin film transistor is typically a liquid crystal display device and an organic light emitting display device. As described above, a display device driven using a thin film transistor forms a thin film transistor and a capacitor in one subpixel.

On the other hand, in the case of the conventional display device, when the capacitor is formed, capacitance variation occurs due to the dimensional deviation between the metal and the metal serving as the electrode of the capacitor as the photo process and the etching process are performed. In order to reduce the dimensional deviation, the process deviation should be reduced, but there is a difficulty in the process method or equipment, and a structural solution is required.

Embodiments of the present invention for solving the above-described problems of the background art provide an organic thin film transistor substrate capable of minimizing capacitance variation even when an area difference between two electrodes forming a capacitor is generated, thereby improving display quality. An electroluminescent display device is provided.

Embodiments of the present invention as a means for solving the above problems, the substrate; A gate disposed on the substrate and a first electrode spaced apart from the gate; A first insulating layer on the gate and the first electrode; An active layer positioned in a region corresponding to the gate on the first insulating layer; A source and a drain in contact with the active layer on the first insulating film; A second electrode connected to the source or the drain to cover the first electrode on the first insulating film; A second insulating layer on the source, drain, and second electrode; And a third electrode disposed on a region corresponding to the second electrode on the second insulating layer and having an area substantially smaller than that of the second electrode.

The third electrode may be formed of a transparent oxide electrode.

The third electrode may be electrically connected to the first electrode.

On the other hand, in another aspect, an embodiment of the present invention, the first substrate; A gate disposed on the first substrate and a first electrode spaced apart from the gate; A first insulating layer on the gate and the first electrode; An active layer positioned in a region corresponding to the gate on the first insulating layer; A source and a drain in contact with the active layer on the first insulating film; A second electrode connected to the source or the drain to cover the first electrode on the first insulating film; A second insulating layer on the source, drain, and second electrode; A third electrode on an area corresponding to the second electrode on the second insulating layer and having an area substantially smaller than that of the second electrode; A second substrate facing the first substrate; A sub pixel on the second substrate; Barrier ribs defining an area of a subpixel; And a spacer positioned in the sub-pixel and protruding so that the cathode and the source or the drain included in the sub-pixel are in electrical contact with each other.

The subpixel includes an anode formed on the second substrate, a bank layer formed on the anode and exposing a portion of the anode, an organic light emitting layer formed on the anode, and a cathode formed on the organic light emitting layer, and the cathode is a partition wall. By the sub-pixels can be formed separately.

The partition wall may be located on the bank layer.

The spacer may be located on the bank layer.

The contact electrode may further include a contact electrode connected to the source or drain, and the contact electrode may be in electrical contact with a cathode formed on the spacer.

The upper electrode may be formed of a transparent oxide electrode.

The third electrode may be electrically connected to the first electrode.

The embodiment of the present invention has an effect of providing an organic light emitting display device which can improve display quality by providing a thin film transistor substrate capable of minimizing capacitance variation even when an area difference between two electrodes forming a capacitor occurs. .

Hereinafter, with reference to the accompanying drawings, the specific content for the practice of the present invention will be described.

1 is a cross-sectional view of a thin film transistor substrate according to an exemplary embodiment of the present invention, FIG. 2 is a plan view of the capacitors shown in FIG. 1, and FIG. 3 is a diagram for adding a description of the capacitors shown in FIG. 1.

Referring to FIG. 1, the thin film transistor substrate may include a transistor T, a first capacitor C1, and a second capacitor C2, and may have a structure as follows.

The gate 101 and the first electrode 105 spaced apart from the gate 101 may be positioned on the substrate 110. The gate 101 may be a gate of the transistor T, and the first electrode 105 may be an electrode of the first capacitor C1. The gate 101 and the first electrode 105 may be formed of the same material. The gate 101 and the first electrode 105 are molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It may be made of any one or an alloy thereof selected from the group consisting of. In addition, the gate 101 and the first electrode 105 may include molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper. (Cu) may be any one selected from the group consisting of a multilayer or an alloy thereof. In addition, the gate 101 and the first electrode 105 may be a double layer of molybdenum / aluminum-neodymium or molybdenum / aluminum.

The first insulating layer 112 may be positioned on the gate 101 and the first electrode 105. The first insulating layer 112 may be a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or a multilayer thereof, but is not limited thereto.

The active layer 113 may be positioned on the first insulating layer 112. The active layer 113 may include amorphous silicon or polycrystalline silicon crystallized therefrom. Although not shown, the active layer 113 may include a channel region, a source region, and a drain region, and the source region and the drain region may be doped with P-type or N-type impurities. In addition, the active layer 113 may include an ohmic contact layer to lower the contact resistance.

The source 114a and the drain 114b may be in contact with the active layer 113 on the first insulating layer 112. The source 114a and drain 114b may consist of a single layer or multiple layers. When the source 114a and the drain 114b have a single layer, molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper ( Cu) may be made of any one or an alloy thereof selected from the group consisting of. In contrast, when the source 114a and the drain 114b are multiple layers, the double layer of molybdenum / aluminum-neodymium and the triple layer of molybdenum / aluminum / molybdenum or molybdenum / aluminum-neodymium / molybdenum may be used.

The second electrode 114c connected to the source 114a or the drain 114b may be disposed on the first insulating layer 112 to cover the first electrode 105. The second electrode 114c may be formed to extend from the source 114a or the drain 114b to cover the first electrode 105 on the first insulating layer 112. The second electrode 114c may form the first capacitor C1 together with the first electrode 105 and also serve as an electrode of the second capacitor C2. The second electrode 114c may be formed of the same material as the source 114a and the drain 114b.

The second insulating layer 115 may be positioned on the source 114a, the drain 114b, and the second electrode 114c. The second insulating layer 115 may be, but is not limited to, a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or a multilayer thereof.

The third electrode 116 may be positioned on the second insulating layer 115 to correspond to the second electrode 114c. The third electrode 116 may be formed to have a substantially narrower area than the second electrode 114c. The third electrode 116 forms a second capacitor C2 together with the second electrode 114c. The third electrode 116 may be formed of a transparent oxide electrode. The third electrode 116 may be electrically connected to the first electrode 105.

Referring to FIG. 2, the first capacitor C1 is formed by the first insulating layer 112 positioned between the first electrode 105 and the second electrode 114c, and the second electrode 114c and the third electrode. The second capacitor C2 is formed by the second insulating layer 115 positioned between the electrodes 116. In the illustrated first capacitor C1 and the second capacitor C2, the second electrode 114c is commonly used.

As described above, the transistor T, the first capacitor C1, and the second capacitor C2 formed on the thin film transistor substrate are stacked on the substrate 110 by a deposition process, a photo process, an exposure process, an etching process, or the like.

On the other hand, when manufacturing the thin film transistor substrate through the above process, the first and second capacitors (C1, C2) between the two electrodes (105, 114c and 114c, 116) and two electrodes (105, 114c and 114c, 116) It is formed by the insulating films 112 and 115 located at. The capacitance of the capacitor depends on the overlapping area between the electrodes. In the exemplary embodiment, the second capacitor C2 formed on the thin film transistor substrate is structurally complemented as follows so that capacitance variation does not occur due to dimensional variation.

Referring to FIG. 3, (a) is to form an area of the third electrode 116 positioned at the upper portion of the second capacitor C2 wider than an area of the second electrode 114c disposed at the lower portion thereof. On the contrary, in (b), the area of the third electrode 116 positioned at the upper portion of the second capacitor C2 is smaller than the area of the second electrode 114c positioned at the lower portion of the second capacitor C2.

In the case of (a), when the second electrode 114c is formed, a change occurs in the area of the third electrode 116 according to an area change in the x-axis direction and the y-axis direction, and thus, of course, the first capacitor C1 A capacitance difference with respect to the second capacitor C2 may occur. However, in the case of (b), even when an area change occurs in the x-axis direction and the y-axis direction when the second electrode 114c is formed, the third electrode 116 is formed narrower than the area of the second electrode 114c ( The capacitance difference as in a) does not occur. That is, (b) can reduce the capacitance variation of the capacitor due to the dimensional variation that may occur in manufacturing the thin film transistor substrate.

Hereinafter, an organic light emitting display device using an embodiment of the present invention will be described.

4 is a cross-sectional view of an organic light emitting display device according to an embodiment of the present invention, and FIG. 5 is a hierarchical structure diagram of an organic light emitting diode.

Referring to FIG. 4, an organic light emitting display device according to an exemplary embodiment of the present invention may include a transistor T, a first capacitor C1, a second capacitor C2, and an organic light emitting diode D. . The transistor T, the first capacitor C1, the second capacitor C, and the organic light emitting diode D may be formed on the first substrate 110. More specifically, the transistor T, the first capacitor C1, the second capacitor C, and the organic light emitting diode D may be formed as follows. Can be.

The gate 101 and the first electrode 105 spaced apart from the gate 101 may be positioned on the first substrate 110. The gate 101 may be a gate of the transistor T, and the first electrode 105 may be an electrode of the first capacitor C1. The gate 101 and the first electrode 105 may be formed of the same material.

The first insulating layer 112 may be positioned on the gate 101 and the first electrode 105. The first insulating layer 112 may be a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or a multilayer thereof, but is not limited thereto.

The active layer 113 may be positioned on the first insulating layer 112. The active layer 113 may include amorphous silicon or polycrystalline silicon crystallized therefrom. Although not shown, the active layer 113 may include a channel region, a source region, and a drain region, and the source region and the drain region may be doped with P-type or N-type impurities. In addition, the active layer 113 may include an ohmic contact layer to lower the contact resistance.

The source 114a and the drain 114b may be in contact with the active layer 113 on the first insulating layer 112. The source 114a and drain 114b may consist of a single layer or multiple layers.

The second electrode 114c connected to the source 114a or the drain 114b may be disposed on the first insulating layer 112 to cover the first electrode 105. The second electrode 114c may form the first capacitor C1 together with the first electrode 105 and also serve as an electrode of the second capacitor C2. The second electrode 114c may be formed of the same material as the source 114a and the drain 114b. The second electrode 114c may be formed to extend from the source 114a or the drain 114b to cover the first electrode 105 on the first insulating layer 112.

The second insulating layer 115 may be positioned on the source 114a, the drain 114b, and the second electrode 114c. The second insulating layer 115 may be, but is not limited to, a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or a multilayer thereof.

The third electrode 116 may be positioned on the second insulating layer 115 to correspond to the second electrode 114c. The third electrode 116 may be formed to have a substantially narrower area than the second electrode 114c. The third electrode 116 forms a second capacitor C2 together with the second electrode 114c. The third electrode 116 may be formed of a transparent oxide electrode. The third electrode 116 may be electrically connected to the first electrode 105.

The third insulating layer 117 may be positioned on the second insulating layer 115. The third insulating layer 117 may be a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or multiple layers thereof, but is not limited thereto.

The lower electrode 121 connected to the source 114a or the drain 114b may be positioned on the third insulating layer 117. The lower electrode 121 may be selected as an anode or a cathode. When the lower electrode 121 is selected as the cathode, the material of the cathode may be formed of any one of aluminum (Al), aluminum alloy (Al alloy), and Almind (AlNd), but is not limited thereto. In addition, when the lower electrode 121 is selected as a cathode, it is advantageous to form a material having a high reflectivity as the material of the cathode.

The bank layer 123 exposing a portion of the lower electrode 121 may be disposed on the lower electrode 121. The bank layer 123 may include an organic material such as benzocyclobutene (BCB) -based resin, acrylic resin, or polyimide resin.

The organic emission layer 127 may be positioned on the lower electrode 121. The organic light emitting layer 127 may include an electron injection layer, an electron transport layer, a light emitting layer, a hole transport layer, and a hole injection layer according to the light emitting method.

The upper electrode 128 may be positioned on the organic emission layer 127. The upper electrode 128 may be selected as an anode or a cathode. When the upper electrode 128 is selected as the anode, the anode material may be formed of any one of indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), and znO doped al 2 oxide (AZO). However, the present invention is not limited thereto.

Referring to FIG. 5, the organic light emitting diode includes a lower electrode 121, an electron injection layer 127a, an electron transport layer 127b, an emission layer 127c, a hole transport layer 127d, a hole injection layer 127e, and an upper electrode. (128).

The electron injection layer 127a serves to facilitate the injection of electrons, and may be Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq or SAlq, but is not limited thereto.

The electron transport layer 127b serves to facilitate the transport of electrons, and may be made of any one or more selected from the group consisting of Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq, and SAlq. However, the present invention is not limited thereto.

The emission layer 127c may include materials emitting red, green, blue, and white light and may be formed using phosphorescent or fluorescent materials.

When the light emitting layer 127c is red, it includes a host material including CBP (carbazole biphenyl) or mCP (1,3-bis (carbazol-9-yl), and PIQIr (acac) (bis (1-phenylisoquinoline) acetylacetonate Phosphorescent light containing a dopant including any one or more selected from the group consisting of iridium), PQIr (acac) (bis (1-phenylquinoline) acetylacetonate iridium), PQIr (tris (1-phenylquinoline) iridium) and PtOEP (octaethylporphyrin platinum) It may be made of a material, alternatively may be made of a fluorescent material including PBD: Eu (DBM) 3 (Phen) or perylene, but is not limited thereto.

When the light emitting layer 127c is green, it may include a host material including CBP or mCP, and may be made of a phosphor including a dopant material including Ir (ppy) 3 (fac tris (2-phenylpyridine) iridium). And, alternatively, it may be made of a fluorescent material including Alq3 (tris (8-hydroxyquinolino) aluminum), but is not limited thereto.

When the light emitting layer 127c is blue, the light emitting layer 127c may include a host material including CBP or mCP and may be formed of a phosphor including a dopant material including (4,6-F2ppy) 2Irpic. Alternatively, it may be made of a fluorescent material including any one selected from the group consisting of spiro-DPVBi, spiro-6P, distilbenzene (DSB), distriarylene (DSA), PFO-based polymer and PPV-based polymer, but It is not limited.

The hole transport layer 127d serves to facilitate the transport of holes, NPD (N, N-dinaphthyl-N, N'-diphenyl benzidine), TPD (N, N'-bis- (3-methylphenyl) -N , N'-bis- (phenyl) -benzidine), s-TAD and MTDATA (4,4 ', 4 "-Tris (N-3-methylphenyl-N-phenyl-amino) -triphenylamine) It may be made of one or more, but is not limited thereto.

The hole injection layer 127e may play a role of smoothly injecting holes. CuPc (cupper phthalocyanine), PEDOT (poly (3,4) -ethylenedioxythiophene), PANI (polyaniline), and NPD (N, N-dinaphthyl) -N, N'-diphenyl benzidine) may be composed of any one or more selected from the group consisting of, but is not limited thereto.

Here, the embodiment of the present invention is not limited to FIG. 5, and at least one of the electron injection layer 127a, the electron transport layer 127b, the hole transport layer 127d, and the hole injection layer 127e may be omitted. .

The transistor T, the first capacitor C1, the second capacitor C2, and the organic light emitting diode D formed on the first substrate 110 are vulnerable to moisture or oxygen, and thus have a second substrate 140. The first substrate 110 and the second substrate 140 may be sealed and bonded with the adhesive member 150. The organic light emitting display device according to the exemplary embodiment may be sealed with a multilayered inorganic protective film instead of the second substrate 140.

6 is a cross-sectional view of an organic light emitting display device according to another embodiment of the present invention, and FIG. 7 is a hierarchical structure diagram of an organic light emitting diode.

Referring to FIG. 6, an organic light emitting display device according to another exemplary embodiment of the present invention may include a transistor T, a first capacitor C1, a second capacitor C2, and an organic light emitting diode D. . The transistor T, the first capacitor C1, and the second capacitor C may be formed on the first substrate 110, and the organic light emitting diode D may be formed on the second substrate 140. In more detail, it may be formed in the following structure.

The gate 101 and the first electrode 105 spaced apart from the gate 101 may be positioned on the first substrate 110. The gate 101 may be a gate of the transistor T, and the first electrode 105 may be an electrode of the first capacitor C1. The gate 101 and the first electrode 105 may be formed of the same material. The gate 101 and the first electrode 105 are molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It may be made of any one or an alloy thereof selected from the group consisting of. In addition, the gate 101 and the first electrode 105 may include molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper. It may be a multilayer formed of any one or an alloy thereof selected from the group consisting of (Cu). In addition, the gate 101 and the first electrode 105 may be a double layer of molybdenum / aluminum-neodymium or molybdenum / aluminum.

The first insulating layer 112 may be positioned on the gate 101 and the first electrode 105. The first insulating layer 112 may be a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or a multilayer thereof, but is not limited thereto.

The active layer 113 may be positioned on the first insulating layer 112. The active layer 113 may include amorphous silicon or polycrystalline silicon crystallized therefrom. Although not shown, the active layer 113 may include a channel region, a source region, and a drain region, and the source region and the drain region may be doped with P-type or N-type impurities. In addition, the active layer 113 may include an ohmic contact layer to lower the contact resistance.

The source 114a and the drain 114b may be in contact with the active layer 113 on the first insulating layer 112. The source 114a and drain 114b may consist of a single layer or multiple layers. When the source 114a and the drain 114b have a single layer, molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper ( Cu) may be made of any one or an alloy thereof selected from the group consisting of. Alternatively, when the source 114a and the drain 114b are multiple layers, the double layer of molybdenum / aluminum-neodymium and the triple layer of molybdenum / aluminum / molybdenum or molybdenum / aluminum-neodymium / molybdenum may be used.

The second electrode 114c connected to the source 114a or the drain 114b may be disposed on the first insulating layer 112 to cover the first electrode 105. The second electrode 114c may form the first capacitor C1 together with the first electrode 105 and also serve as an electrode of the second capacitor C2. The second electrode 114c may be formed of the same material as the source 114a and the drain 114b. The second electrode 114c may be formed to extend from the source 114a or the drain 114b to cover the first electrode 105 on the first insulating layer 112.

The second insulating layer 115 may be positioned on the source 114a, the drain 114b, and the second electrode 114c. The second insulating layer 115 may be, but is not limited to, a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or a multilayer thereof.

The third electrode 116 may be positioned on the second insulating layer 115 to correspond to the second electrode 114c. The third electrode 116 may be formed to have a substantially narrower area than the second electrode 114c. The third electrode 116 forms a second capacitor C2 together with the second electrode 114c. The third electrode 116 may be formed of a transparent oxide electrode. The third electrode 116 may be electrically connected to the first electrode 105.

The third insulating layer 117 may be positioned on the second insulating layer 115. The third insulating layer 117 may be a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or multiple layers thereof, but is not limited thereto.

The contact electrode 119 connected to the source 114a or the drain 114b may be positioned on the third insulating layer 117.

The lower electrode 121 may be positioned on the second substrate 140. The lower electrode 121 may be selected as an anode or a cathode. When the lower electrode 121 is selected as the anode, the anode material may be formed of any one of indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), and znO doped al 2 oxide (AZO). However, the present invention is not limited thereto.

The bank layer 123 exposing a portion of the lower electrode 121 may be disposed on the lower electrode 121. The bank layer 123 may include an organic material such as benzocyclobutene (BCB) -based resin, acrylic resin, or polyimide resin.

An auxiliary electrode 122 contacting the lower electrode 121 may be disposed under the bank layer 123. The auxiliary electrode 122 may be made of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), and the like. .

The barrier layer 124 and the protruding spacer 125 may be positioned on the bank layer 123. The partition wall 124 may be formed in an inverse taper shape surrounding the subpixels to define an area of the subpixels. The spacer 125 may have a shape in which the upper area is narrower than the base area.

The organic emission layer 127 divided by the partition wall 124 may be disposed on the lower electrode 121. The organic light emitting layer 127 may include an electron injection layer, an electron transport layer, a light emitting layer, a hole transport layer, and a hole injection layer according to the light emitting method.

 The upper electrode 128 formed on the surface of the spacer 125 and separated by the partition 124 may be disposed on the organic emission layer 127. The upper electrode 128 may be selected as a cathode or an anode. When the upper electrode 128 is selected as the cathode, the cathode material may be formed of any one of aluminum (Al), aluminum alloy (Al alloy), and Almind (AlNd), but is not limited thereto.

Referring to FIG. 7, the organic light emitting diode includes a lower electrode 121, a hole injection layer 127a, a hole transport layer 127b, a light emitting layer 127c, an electron transport layer 127d, an electron injection layer 127e, and an upper electrode ( 128).

The hole injection layer 127a may play a role of smoothly injecting holes. CuPc (cupper phthalocyanine), PEDOT (poly (3,4) -ethylenedioxythiophene), PANI (polyaniline), and NPD (N, N-dinaphthyl) -N, N'-diphenyl benzidine) may be composed of any one or more selected from the group consisting of, but is not limited thereto.

The hole transport layer 127b serves to facilitate the transport of holes, NPD (N, N-dinaphthyl-N, N'-diphenyl benzidine), TPD (N, N'-bis- (3-methylphenyl) -N , N'-bis- (phenyl) -benzidine), s-TAD and MTDATA (4,4 ', 4 "-Tris (N-3-methylphenyl-N-phenyl-amino) -triphenylamine) It may be made of one or more, but is not limited thereto.

The emission layer 127c may include materials emitting red, green, blue, and white light and may be formed using phosphorescent or fluorescent materials.

When the light emitting layer 127c is red, it includes a host material including CBP (carbazole biphenyl) or mCP (1,3-bis (carbazol-9-yl), and PIQIr (acac) (bis (1-phenylisoquinoline) acetylacetonate Phosphorescent light containing a dopant including any one or more selected from the group consisting of iridium), PQIr (acac) (bis (1-phenylquinoline) acetylacetonate iridium), PQIr (tris (1-phenylquinoline) iridium) and PtOEP (octaethylporphyrin platinum) It may be made of a material, alternatively may be made of a fluorescent material including PBD: Eu (DBM) 3 (Phen) or perylene, but is not limited thereto.

When the light emitting layer 127c is green, the light emitting layer 127c may include a host material including CBP or mCP, and may be formed of a phosphor including a dopant material including Ir (ppy) 3 (fac tris (2-phenylpyridine) iridium). Alternatively, the composition may be made of a fluorescent material including Alq3 (tris (8-hydroxyquinolino) aluminum), but is not limited thereto.

When the light emitting layer 127c is blue, the light emitting layer 127c may include a host material including CBP or mCP and may be formed of a phosphor including a dopant material including (4,6-F2ppy) 2Irpic. Alternatively, it may be made of a fluorescent material including any one selected from the group consisting of spiro-DPVBi, spiro-6P, distilbenzene (DSB), distriarylene (DSA), PFO-based polymer and PPV-based polymer, but It is not limited.

The electron transport layer 127d serves to facilitate electron transport, and may be made of any one or more selected from the group consisting of Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq, and SAlq. However, the present invention is not limited thereto.

The electron injection layer 127e serves to facilitate the injection of electrons, and may be Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq or SAlq, but is not limited thereto.

Here, the embodiment of the present invention is not limited to FIG. 7, and at least one of the hole injection layer 127a, the hole transport layer 127b, the electron transport layer 127d, and the electron injection layer 127e may be omitted. .

The transistor T, the first capacitor C1, the second capacitor C2, and the organic light emitting diode D formed on the first substrate 110 and the second substrate 140 are vulnerable to moisture or oxygen, and thus are adhered to each other. Sealing and bonding can be performed with the member 150. When the first substrate 110 and the second substrate 140 are hermetically bonded to each other, the contact electrode 119 connected to the source 114a or the drain 114b of the transistor T formed on the first substrate 110 may be connected to the first substrate 110. The upper electrode 128 of the organic light emitting diode D formed on the second substrate 140 is electrically connected by the protruding spacer 125.

Embodiments of the present invention provide an organic light emitting display device that can improve display quality by providing a thin film transistor substrate capable of minimizing capacitance variation even when an area difference between two electrodes forming a capacitor occurs.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood that the invention may be practiced. Therefore, the embodiments described above are to be understood as illustrative and not restrictive in all aspects. In addition, the scope of the present invention is represented by the claims to be described later rather than the detailed description. Also, it is to be construed that all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts are included in the scope of the present invention.

1 is a cross-sectional view of a thin film transistor substrate according to an embodiment of the present invention.

FIG. 2 is a plan view of the capacitors shown in FIG. 1. FIG.

3 is a diagram for adding a description to the capacitors shown in FIG.

4 is a cross-sectional view of an organic light emitting display device according to an embodiment of the present invention.

5 is a hierarchical structure diagram of an organic light emitting diode.

6 is a cross-sectional view of an organic light emitting display device according to another embodiment of the present invention.

7 is a hierarchical structure diagram of an organic light emitting diode.

<Explanation of symbols on main parts of the drawings>

101: gate 105: first electrode

112: first insulating film 113: active layer

114a: source 114b: drain

114c: second electrode 115: second insulating film

116: third electrode 121: lower electrode

127: organic light emitting layer 128: upper electrode

Claims (10)

Board; A gate positioned on the substrate and a first electrode spaced apart from the gate; A first insulating layer on the gate and the first electrode; An active layer on the first insulating layer in an area corresponding to the gate; A source and a drain contacting the active layer on the first insulating layer; A second electrode connected to the source or drain to cover the first electrode on the first insulating layer; A second insulating layer on the source, the drain and the second electrode; And And a third electrode on the second insulating layer, the third electrode being in a region corresponding to the second electrode and having an area substantially smaller than that of the second electrode. The method of claim 1, The third electrode, A thin film transistor substrate, characterized in that formed of a transparent oxide electrode. The method of claim 1, The third electrode, And a thin film transistor substrate electrically connected to the first electrode. First substrate; A gate positioned on the first substrate and a first electrode spaced apart from the gate; A first insulating layer on the gate and the first electrode; An active layer on the first insulating layer in an area corresponding to the gate; A source and a drain contacting the active layer on the first insulating layer; A second electrode connected to the source or drain to cover the first electrode on the first insulating layer; A second insulating layer on the source, drain, and second electrode; A third electrode on an area corresponding to the second electrode on the second insulating layer and having an area substantially smaller than that of the second electrode; A second substrate facing the first substrate; A sub pixel on the second substrate; Barrier ribs defining an area of the sub-pixels; And And a spacer positioned in the sub-pixel and protruding to electrically contact the cathode included in the sub-pixel and the source or drain. The method of claim 4, wherein The sub pixel is, An anode formed on the second substrate; A bank layer formed on the anode and exposing a portion of the anode; An organic light emitting layer formed on the anode, The cathode is formed on the organic light emitting layer, The cathode, And an organic light emitting display device, each of which is divided by the partition wall. The method of claim 5, The partition wall, And an organic light emitting display device on the bank layer. The method of claim 5, The spacer, And an organic light emitting display device on the bank layer. The method of claim 5, Further comprising a contact electrode connected to the source or drain, And the contact electrode is in electrical contact with the cathode formed on the spacer. The method of claim 4, wherein The third electrode, An organic light emitting display device, characterized in that formed of a transparent oxide electrode. The method of claim 4, wherein The third electrode, And an organic light emitting display device electrically connected to the first electrode.

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