KR20100019522A - 태양 전지를 제조하기 위한 보호층 - Google Patents

태양 전지를 제조하기 위한 보호층 Download PDF

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Publication number
KR20100019522A
KR20100019522A KR1020097026224A KR20097026224A KR20100019522A KR 20100019522 A KR20100019522 A KR 20100019522A KR 1020097026224 A KR1020097026224 A KR 1020097026224A KR 20097026224 A KR20097026224 A KR 20097026224A KR 20100019522 A KR20100019522 A KR 20100019522A
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KR
South Korea
Prior art keywords
protective layer
solar cell
vapor deposition
substrate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020097026224A
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English (en)
Korean (ko)
Inventor
신-치아오 루안
피터 코우신스
Original Assignee
선파워 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 선파워 코포레이션 filed Critical 선파워 코포레이션
Publication of KR20100019522A publication Critical patent/KR20100019522A/ko
Withdrawn legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/60—Arrangements for cooling, heating, ventilating or compensating for temperature fluctuations
    • H10F77/63—Arrangements for cooling directly associated or integrated with photovoltaic cells, e.g. heat sinks directly associated with the photovoltaic cells or integrated Peltier elements for active cooling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020097026224A 2007-05-17 2008-05-13 태양 전지를 제조하기 위한 보호층 Withdrawn KR20100019522A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US93080007P 2007-05-17 2007-05-17
US60/930,800 2007-05-17
US12/106,561 2008-04-21
US12/106,561 US7670638B2 (en) 2007-05-17 2008-04-21 Protection layer for fabricating a solar cell

Publications (1)

Publication Number Publication Date
KR20100019522A true KR20100019522A (ko) 2010-02-18

Family

ID=40026447

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097026224A Withdrawn KR20100019522A (ko) 2007-05-17 2008-05-13 태양 전지를 제조하기 위한 보호층

Country Status (7)

Country Link
US (2) US7670638B2 (enExample)
EP (1) EP2158613A4 (enExample)
JP (1) JP2010527514A (enExample)
KR (1) KR20100019522A (enExample)
CN (1) CN101681944A (enExample)
AU (1) AU2008254968A1 (enExample)
WO (1) WO2008143885A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014099308A1 (en) * 2012-12-19 2014-06-26 Sunpower Corporation Solar cell with silicon oxynitride dielectric layer
KR20170123276A (ko) * 2016-04-28 2017-11-07 꼼미사리아 아 레네르지 아토미끄 에뜨 옥스 에너지스 앨터네이티브즈 게터 물질 층을 포함하는 전자파 검출 장치를 만드는 방법

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US9064999B2 (en) 2009-09-07 2015-06-23 Lg Electronics Inc. Solar cell and method for manufacturing the same
US8525018B2 (en) 2009-09-07 2013-09-03 Lg Electronics Inc. Solar cell
CN102714228A (zh) * 2010-01-18 2012-10-03 应用材料公司 制造具有高转换效率的薄膜太阳能电池
JP2011253987A (ja) 2010-06-03 2011-12-15 Mitsubishi Electric Corp 半導体受光素子及び光モジュール
CN103311320B (zh) * 2012-03-14 2016-12-14 江苏新源动力有限公司 太阳能电池用透明导电薄膜及其制备方法
CN102800716B (zh) 2012-07-09 2015-06-17 友达光电股份有限公司 太阳能电池及其制作方法
CN102779866B (zh) * 2012-08-17 2014-12-24 天津中环半导体股份有限公司 一种深孔交错背接触太阳能电池结构及其制造方法
TWI484647B (zh) * 2013-02-08 2015-05-11 Motech Ind Inc 太陽能電池及其模組
TWI612682B (zh) * 2013-12-10 2018-01-21 太陽電子公司 具氮氧化矽介電層之太陽能電池
CN105226110B (zh) * 2014-06-26 2017-02-15 英稳达科技股份有限公司 一种太阳能电池元件
CN105489667B (zh) * 2016-02-23 2018-01-02 深圳市创益科技发展有限公司 一种用背接触式太阳能电池加工制成小芯片的电极引出方法
USD822890S1 (en) 2016-09-07 2018-07-10 Felxtronics Ap, Llc Lighting apparatus
US10775030B2 (en) 2017-05-05 2020-09-15 Flex Ltd. Light fixture device including rotatable light modules
USD862777S1 (en) 2017-08-09 2019-10-08 Flex Ltd. Lighting module wide distribution lens
USD832494S1 (en) 2017-08-09 2018-10-30 Flex Ltd. Lighting module heatsink
USD833061S1 (en) 2017-08-09 2018-11-06 Flex Ltd. Lighting module locking endcap
USD877964S1 (en) 2017-08-09 2020-03-10 Flex Ltd. Lighting module
USD872319S1 (en) 2017-08-09 2020-01-07 Flex Ltd. Lighting module LED light board
USD846793S1 (en) 2017-08-09 2019-04-23 Flex Ltd. Lighting module locking mechanism
USD832495S1 (en) 2017-08-18 2018-10-30 Flex Ltd. Lighting module locking mechanism
USD862778S1 (en) 2017-08-22 2019-10-08 Flex Ltd Lighting module lens
USD888323S1 (en) 2017-09-07 2020-06-23 Flex Ltd Lighting module wire guard

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US4945065A (en) * 1988-06-02 1990-07-31 Mobil Solar Energy Corporation Method of passivating crystalline substrates
US4927770A (en) * 1988-11-14 1990-05-22 Electric Power Research Inst. Corp. Of District Of Columbia Method of fabricating back surface point contact solar cells
US5053083A (en) * 1989-05-08 1991-10-01 The Board Of Trustees Of The Leland Stanford Junior University Bilevel contact solar cells
US5360491A (en) * 1993-04-07 1994-11-01 The United States Of America As Represented By The United States Department Of Energy β-silicon carbide protective coating and method for fabricating same
US5871591A (en) * 1996-11-01 1999-02-16 Sandia Corporation Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process
JP3796069B2 (ja) 1999-07-15 2006-07-12 三洋電機株式会社 太陽電池モジュール
JP2004039751A (ja) 2002-07-01 2004-02-05 Toyota Motor Corp 光起電力素子
US7402448B2 (en) * 2003-01-31 2008-07-22 Bp Corporation North America Inc. Photovoltaic cell and production thereof
US7339110B1 (en) * 2003-04-10 2008-03-04 Sunpower Corporation Solar cell and method of manufacture
US7388147B2 (en) * 2003-04-10 2008-06-17 Sunpower Corporation Metal contact structure for solar cell and method of manufacture
US7354631B2 (en) * 2003-11-06 2008-04-08 Micron Technology, Inc. Chemical vapor deposition apparatus and methods
DE102005004410B4 (de) * 2005-01-31 2010-09-16 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Ausbilden einer Halbleiterstruktur mit Bemustern einer Schicht aus einem Material
US7554031B2 (en) * 2005-03-03 2009-06-30 Sunpower Corporation Preventing harmful polarization of solar cells

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014099308A1 (en) * 2012-12-19 2014-06-26 Sunpower Corporation Solar cell with silicon oxynitride dielectric layer
US9018516B2 (en) 2012-12-19 2015-04-28 Sunpower Corporation Solar cell with silicon oxynitride dielectric layer
US10304972B2 (en) 2012-12-19 2019-05-28 Sunpower Corporation Solar cell with silicon oxynitride dielectric layer
KR20170123276A (ko) * 2016-04-28 2017-11-07 꼼미사리아 아 레네르지 아토미끄 에뜨 옥스 에너지스 앨터네이티브즈 게터 물질 층을 포함하는 전자파 검출 장치를 만드는 방법

Also Published As

Publication number Publication date
WO2008143885A3 (en) 2009-02-05
EP2158613A4 (en) 2012-07-18
EP2158613A2 (en) 2010-03-03
WO2008143885A2 (en) 2008-11-27
US20080283490A1 (en) 2008-11-20
AU2008254968A1 (en) 2008-11-27
JP2010527514A (ja) 2010-08-12
US20100129955A1 (en) 2010-05-27
CN101681944A (zh) 2010-03-24
US7670638B2 (en) 2010-03-02

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Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20091216

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid