US7670638B2 - Protection layer for fabricating a solar cell - Google Patents

Protection layer for fabricating a solar cell Download PDF

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Publication number
US7670638B2
US7670638B2 US12/106,561 US10656108A US7670638B2 US 7670638 B2 US7670638 B2 US 7670638B2 US 10656108 A US10656108 A US 10656108A US 7670638 B2 US7670638 B2 US 7670638B2
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protection layer
vapor deposition
layer
substrate
arc
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US20080283490A1 (en
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Hsin-Chiao Luan
Peter Cousins
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Maxeon Solar Pte Ltd
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SunPower Corp
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Assigned to SUNPOWER CORPORATION reassignment SUNPOWER CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: COUSINS, PETER, LUAN, HSIN-CHIAO
Priority to US12/106,561 priority Critical patent/US7670638B2/en
Priority to EP08754454A priority patent/EP2158613A4/en
Priority to CN200880015716A priority patent/CN101681944A/zh
Priority to JP2010508414A priority patent/JP2010527514A/ja
Priority to AU2008254968A priority patent/AU2008254968A1/en
Priority to KR1020097026224A priority patent/KR20100019522A/ko
Priority to PCT/US2008/006165 priority patent/WO2008143885A2/en
Publication of US20080283490A1 publication Critical patent/US20080283490A1/en
Priority to US12/687,810 priority patent/US20100129955A1/en
Publication of US7670638B2 publication Critical patent/US7670638B2/en
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Assigned to Maxeon Solar Pte. Ltd. reassignment Maxeon Solar Pte. Ltd. ASSIGNMENT OF ASSIGNOR'S INTEREST Assignors: SUNPOWER CORPORATION
Assigned to DB TRUSTEES (HONG KONG) LIMITED reassignment DB TRUSTEES (HONG KONG) LIMITED SECURITY INTEREST Assignors: Maxeon Solar Pte. Ltd.
Assigned to DB TRUSTEES (HONG KONG) LIMITED reassignment DB TRUSTEES (HONG KONG) LIMITED SECOND LIEN SECURITY INTEREST AGREEMENT Assignors: Maxeon Solar Pte. Ltd
Assigned to DB TRUSTEES (HONG KONG) LIMITED reassignment DB TRUSTEES (HONG KONG) LIMITED SECURITY INTEREST Assignors: Maxeon Solar Pte. Ltd.
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/60—Arrangements for cooling, heating, ventilating or compensating for temperature fluctuations
    • H10F77/63—Arrangements for cooling directly associated or integrated with photovoltaic cells, e.g. heat sinks directly associated with the photovoltaic cells or integrated Peltier elements for active cooling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • Embodiments of the present invention are in the field of Semiconductor Fabrication and, in particular, Solar Cell Fabrication.
  • Photovoltaic cells are well known devices for direct conversion of solar radiation into electrical energy.
  • solar cells are fabricated on a semiconductor wafer or substrate using semiconductor processing techniques to form a p-n junction near a surface of the substrate.
  • Solar radiation impinging on the surface of the substrate creates electron and hole pairs in the bulk of the substrate, which migrate to p-doped and n-doped regions in the substrate, thereby generating a voltage differential between the doped regions.
  • the doped regions are coupled to metal contacts on the solar cell to direct an electrical current from the cell to an external circuit coupled thereto.
  • the surface of the solar cell to receive radiation is textured and/or coated with a layer or coating of an anti-reflective material to decrease the reflection of light, thereby increasing the efficiency of the solar cell.
  • the fabrication of such solar cells involves a number of complicated process steps including the deposition, doping and etching of many different layers of material. These process steps are performed or carried out with low variation tolerances using many different processing tools under controlled environmental conditions.
  • FIG. 1 depicts a Flowchart representing a series of operations in a method for fabricating a solar cell, in accordance with an embodiment of the present invention.
  • FIG. 2A illustrates a cross-sectional view of a substrate, corresponding to operation 102 from the Flowchart of FIG. 1 , in accordance with an embodiment of the present invention.
  • FIG. 2B illustrates a cross-sectional view of a substrate having an anti-reflective coating (ARC) layer formed thereon, corresponding to operation 104 from the Flowchart of FIG. 1 , in accordance with an embodiment of the present invention.
  • ARC anti-reflective coating
  • FIG. 2C illustrates a cross-sectional view of a substrate having a protection layer formed thereon, corresponding to operation 106 from the Flowchart of FIG. 1 , in accordance with an embodiment of the present invention.
  • FIG. 2D illustrates a cross-sectional view of a substrate having a masking layer formed thereon, in accordance with an embodiment of the present invention.
  • FIG. 2E illustrates a cross-sectional view of a substrate having a plurality of contact openings formed thereon, in accordance with an embodiment of the present invention.
  • FIG. 2F illustrates a cross-sectional view of a substrate having the protection layer and the masking layer removed, in accordance with an embodiment of the present invention.
  • FIG. 2G illustrates a cross-sectional view of a substrate having a plurality of contacts formed in the plurality of contact openings, in accordance with an embodiment of the present invention.
  • a substrate having a light-receiving surface may be provided in a process chamber.
  • an anti-reflective coating (ARC) layer is then formed, in the process chamber, above the light-receiving surface of the substrate.
  • a protection layer also known as an etch mask
  • the protection layer comprises amorphous carbon.
  • the protection layer comprises amorphous silicon.
  • Formation of a protection layer on an ARC layer may enable preservation of the ARC layer during various process operations in the fabrication of a solar cell.
  • a protection layer is used to maintain the integrity of an ARC layer disposed on a solar cell substrate during exposure of the solar cell substrate to a buffered oxide etch (BOE).
  • BOE buffered oxide etch
  • the protection layer may be fabricated in the same process tool as the ARC layer.
  • an ARC layer is first formed on a solar cell substrate in a process chamber. Then, without removing the substrate from the process chamber, the protection layer is formed on the ARC layer.
  • FIG. 1 depicts a Flowchart 100 representing a series of operations in a method for fabricating a solar cell, in accordance with an embodiment of the present invention.
  • FIGS. 2A-2G illustrate cross-sectional views representing operations in the fabrication of a solar cell, in accordance with an embodiment of the present invention.
  • FIG. 2A illustrates a cross-sectional view of a substrate, corresponding to operation 102 from Flowchart 100 , in accordance with an embodiment of the present invention.
  • a substrate having a light-receiving surface is provided in a process chamber.
  • a substrate 200 has a light-receiving surface 202 and a back surface 204 .
  • light-receiving surface 202 is textured, as depicted in FIG. 2A , to mitigate undesirable reflection during solar radiation collection efficiency.
  • a plurality of active region 206 is formed at back surface 204 of substrate 200 .
  • the plurality of active regions 206 includes alternating N+ and P+ regions, as depicted in FIG. 2A .
  • substrate 200 is composed of silicon, the N+ regions include phosphorous dopant impurity atoms and the P+ regions include boron dopant impurity atoms.
  • a dielectric layer 208 is disposed on back surface 204 of substrate 200 .
  • dielectric layer 208 is composed of a material such as, but not limited to, silicon dioxide.
  • FIG. 2B illustrates a cross-sectional view of a substrate having an anti-reflective coating (ARC) layer formed thereon, corresponding to operation 104 from Flowchart 100 , in accordance with an embodiment of the present invention.
  • ARC anti-reflective coating
  • an ARC layer 220 is formed above and conformal with light-receiving surface 202 of substrate 200 .
  • ARC layer 220 is composed of a material such as, but not limited to, silicon nitride, silicon dioxide or titanium oxide.
  • ARC layer 220 is a multi-layer stack including a silicon dioxide portion directly adjacent to light-receiving surface 202 and a silicon nitride portion directly adjacent to the silicon dioxide portion.
  • ARC layer 220 may be formed by any technique suitable to dispose a conformal layer above light-receiving surface 202 , as depicted in FIG. 2B .
  • ARC layer 220 is formed by a technique such as, but not limited to, chemical vapor deposition, plasma-enhanced chemical vapor deposition, atmospheric-pressure chemical vapor deposition or physical vapor deposition.
  • ARC layer 220 is composed of silicon nitride deposited by a plasma-enhanced chemical vapor deposition process and formed to a thickness approximately in the range of 10-100 nanometers.
  • FIG. 2C illustrates a cross-sectional view of a substrate having a protection layer formed thereon, corresponding to operation 106 from Flowchart 100 , in accordance with an embodiment of the present invention. Referring to operation 106 of Flowchart 100 and corresponding FIG. 2C , without removing substrate 200 from the process chamber, a protection layer is formed above ARC layer 220 .
  • protection layer 230 is formed above and conformal with ARC layer 220 .
  • Protection layer 230 may be composed of a material and formed by a technique suitable to provide conformal coverage of ARC layer 220 .
  • protection layer 230 is composed of amorphous carbon.
  • protection layer 230 is formed by vapor deposition using a gas such as, but not limited to, methane (CH 4 ), ethane (C 2 H 6 ), propane (C 3 H 8 ), ethylene (C 2 H 4 ) or propylene (C 3 H 6 ).
  • protection layer 230 is formed by using a liquid hydrocarbon precursor such as, but not limited to, toluene (C 7 H 8 ) transported by a carrier gas such as, but not limited to, argon (Ar), nitrogen (N 2 ), helium (He) or hydrogen (H 2 ).
  • a carrier gas such as, but not limited to, argon (Ar), nitrogen (N 2 ), helium (He) or hydrogen (H 2 ).
  • protection layer 230 is composed of amorphous carbon and is formed at a temperature of less than approximately 500 degrees Celsius and, more preferably, at a temperature of less than approximately 400 degrees Celsius.
  • protection layer 230 is composed of amorphous silicon.
  • protection layer 230 is formed by vapor deposition using a gas such as, but not limited to, silane (SiH 4 ) gas.
  • Protection layer 230 may be formed to a thickness suitable to provide a pin-hole-free coverage of ARC layer 220 while being sufficiently easy to remove at a subsequent processing step. In one embodiment, protection layer 230 is formed to a thickness approximately in the range of 1-30 nanometers. In a specific embodiment, protection layer 230 is resistant to a BOE.
  • protection layer 230 is formed directly after the formation of, and in the same process chamber as, ARC layer 220 .
  • ARC layer 220 is first formed in the process chamber and then, without removing substrate 200 from the process chamber, protection layer 230 is formed on ARC layer 220 .
  • at least one complete process step is eliminated from an integration scheme for fabricating a solar cell.
  • ARC layer 220 and protection layer 230 are formed by the same technique such as, but not limited to, chemical vapor deposition, plasma-enhanced chemical vapor deposition, atmospheric-pressure chemical vapor deposition or physical vapor deposition.
  • ARC layer 220 and protection layer 230 are formed by first flowing, in a process chamber, at least a first process gas and a second process gas to form ARC layer 220 above light-receiving surface 202 of substrate 200 . Then, without removing substrate 200 from the process chamber, at least the first process gas, but not the second process gas, is flowed to form protection layer 230 above ARC layer 220 .
  • ARC layer 220 is composed of a material such as, but not limited to, silicon nitride, silicon oxy-nitride or carbon-doped silicon oxide
  • protection layer 230 is composed of amorphous silicon
  • the first process gas is silane (SiH 4 ) and the second process gas is ammonia (NH 3 ).
  • dielectric layer 208 may be patterned to form a plurality of contact openings to the plurality of active regions 206 at back surface 204 of substrate 200 .
  • FIG. 2D illustrates a cross-sectional view of a substrate having a mask layer formed thereon, in accordance with an embodiment of the present invention.
  • a mask layer 240 is disposed on dielectric layer 208 .
  • the pattern of mask layer 240 determines the location where a plurality of contact openings will subsequently be formed.
  • mask layer 240 is composed of a material such as, but not limited to, an organic ink or an organic photo-resist.
  • FIG. 2E illustrates a cross-sectional view of a substrate having a plurality of contact openings formed thereon, in accordance with an embodiment of the present invention.
  • a plurality of contact openings 250 is formed in dielectric layer 208 in regions determined by mask layer 240 .
  • the plurality of contact openings 250 is formed by etching dielectric layer 208 using a BOE.
  • protection layer 230 protects ARC layer 220 during the forming of the plurality of contact openings 250 with the BOE.
  • the BOE is composed of an aqueous solution that includes hydrofluoric acid (HF) and ammonium fluoride (NH 4 F).
  • the HF:NH 4 F ratio is approximately in the range of 1:4-1:10 and the BOE is applied to dielectric layer 208 for a duration approximately in the range of 3-10 minutes at a temperature approximately in the range of 30-40 degrees Celsius.
  • FIG. 2F illustrates a cross-sectional view of a substrate having the protection layer and the masking layer removed, in accordance with an embodiment of the present invention.
  • protection layer 230 is removed to re-expose the top surface of ARC layer 220 and mask layer 240 is removed to re-expose the top surface of dielectric layer 208 .
  • protection layer 230 need only be retained throughout the patterning of dielectric layer 208 to form the plurality of contact openings 250 .
  • protection layer 230 and mask layer 240 are removed in the same process step.
  • protection layer 230 is composed of amorphous carbon and is removed by using a wet etchant that includes sulfuric acid (H 2 SO 4 ) and hydrogen peroxide (H 2 O 2 ) and is applied for a duration in the range of 10-30 seconds.
  • protection layer 230 is composed of amorphous silicon and is removed by using a wet etchant that includes potassium hydroxide (KOH) and water and is applied for a duration sufficiently long to completely remove the amorphous silicon protection layer, but sufficiently short as to mitigate any detrimental loss of silicon from the exposed portions of back surface 204 of substrate 200 .
  • the loss of silicon from the exposed portions of back surface 204 of substrate 200 is targeted to be less than approximately 10 nanometers.
  • FIG. 2G illustrates a cross-sectional view of a substrate having a plurality of contacts formed in the plurality of contact openings, in accordance with an embodiment of the present invention.
  • a plurality of contacts 260 is formed by depositing a metal-containing material into the plurality of contact openings 250 .
  • the metal-containing material is composed of a metal such as, but not limited to, aluminum, silver, palladium or alloys thereof.
  • a back side contact solar cell 290 is thus formed.
  • Back side contact solar cells are also disclosed in U.S. Pat. Nos. 5,053,083 and 4,927,770, the entire contents of which are hereby incorporated by reference herein.
  • a method for fabricating a solar cell has been disclosed.
  • a substrate having a light-receiving surface is provided in a process chamber.
  • An ARC layer is then formed, in the process chamber, above the light-receiving surface of the substrate.
  • a protection layer is formed above the ARC layer.
  • the protection layer comprises amorphous carbon.
  • the protection layer comprises amorphous silicon.
  • the advantages of the method for fabricating solar cells of the present invention over previous or conventional cells and methods may include: (i) substantial savings in the cost of fabricating solar cells through the elimination of the need for a dedicated tool to form a protection layer for an ARC layer, (ii) significant reduction in the time needed to fabricate solar cells through the combining of the ARC layer and protection layer deposition steps, and (iii) improved yield through the reduced handling of the substrate achieved through the deposition of the protection layer in the same process chamber used to form an ARC layer.

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
US12/106,561 2007-05-17 2008-04-21 Protection layer for fabricating a solar cell Active 2028-04-22 US7670638B2 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
US12/106,561 US7670638B2 (en) 2007-05-17 2008-04-21 Protection layer for fabricating a solar cell
PCT/US2008/006165 WO2008143885A2 (en) 2007-05-17 2008-05-13 Protection layer for fabricating a solar cell
CN200880015716A CN101681944A (zh) 2007-05-17 2008-05-13 用于制备太阳能电池的保护层
JP2010508414A JP2010527514A (ja) 2007-05-17 2008-05-13 太陽電池を製造するための保護層
AU2008254968A AU2008254968A1 (en) 2007-05-17 2008-05-13 Protection layer for fabricating a solar cell
KR1020097026224A KR20100019522A (ko) 2007-05-17 2008-05-13 태양 전지를 제조하기 위한 보호층
EP08754454A EP2158613A4 (en) 2007-05-17 2008-05-13 PROTECTIVE LAYER FOR MANUFACTURING A SOLAR CELL
US12/687,810 US20100129955A1 (en) 2007-05-17 2010-01-14 Protection layer for fabricating a solar cell

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US93080007P 2007-05-17 2007-05-17
US12/106,561 US7670638B2 (en) 2007-05-17 2008-04-21 Protection layer for fabricating a solar cell

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US12/687,810 Continuation US20100129955A1 (en) 2007-05-17 2010-01-14 Protection layer for fabricating a solar cell

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US20080283490A1 US20080283490A1 (en) 2008-11-20
US7670638B2 true US7670638B2 (en) 2010-03-02

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US12/687,810 Abandoned US20100129955A1 (en) 2007-05-17 2010-01-14 Protection layer for fabricating a solar cell

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US (2) US7670638B2 (enExample)
EP (1) EP2158613A4 (enExample)
JP (1) JP2010527514A (enExample)
KR (1) KR20100019522A (enExample)
CN (1) CN101681944A (enExample)
AU (1) AU2008254968A1 (enExample)
WO (1) WO2008143885A2 (enExample)

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US20110174362A1 (en) * 2010-01-18 2011-07-21 Applied Materials, Inc. Manufacture of thin film solar cells with high conversion efficiency
JP2011253987A (ja) 2010-06-03 2011-12-15 Mitsubishi Electric Corp 半導体受光素子及び光モジュール
CN103311320B (zh) * 2012-03-14 2016-12-14 江苏新源动力有限公司 太阳能电池用透明导电薄膜及其制备方法
CN102800716B (zh) 2012-07-09 2015-06-17 友达光电股份有限公司 太阳能电池及其制作方法
CN102779866B (zh) * 2012-08-17 2014-12-24 天津中环半导体股份有限公司 一种深孔交错背接触太阳能电池结构及其制造方法
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TWI612682B (zh) * 2013-12-10 2018-01-21 太陽電子公司 具氮氧化矽介電層之太陽能電池
CN105226110B (zh) * 2014-06-26 2017-02-15 英稳达科技股份有限公司 一种太阳能电池元件
CN105489667B (zh) * 2016-02-23 2018-01-02 深圳市创益科技发展有限公司 一种用背接触式太阳能电池加工制成小芯片的电极引出方法
FR3050870B1 (fr) * 2016-04-28 2018-05-25 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de realisation d’un dispositif de detection de rayonnement electromagnetique comportant une couche en un materiau getter

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