KR20090119446A - 박막 트랜지스터 및 그의 제조방법 - Google Patents
박막 트랜지스터 및 그의 제조방법 Download PDFInfo
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- KR20090119446A KR20090119446A KR1020080045497A KR20080045497A KR20090119446A KR 20090119446 A KR20090119446 A KR 20090119446A KR 1020080045497 A KR1020080045497 A KR 1020080045497A KR 20080045497 A KR20080045497 A KR 20080045497A KR 20090119446 A KR20090119446 A KR 20090119446A
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- Prior art keywords
- layer
- transparent semiconductor
- semiconductor layer
- thin film
- substrate
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- 239000010409 thin film Substances 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims abstract description 30
- 239000010408 film Substances 0.000 claims abstract description 65
- 239000004065 semiconductor Substances 0.000 claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 238000005530 etching Methods 0.000 claims abstract description 21
- 230000001681 protective effect Effects 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 21
- 238000001312 dry etching Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000002161 passivation Methods 0.000 claims description 11
- 229910007717 ZnSnO Inorganic materials 0.000 claims description 9
- 238000000059 patterning Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229920003023 plastic Polymers 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 239000004033 plastic Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims 17
- 238000000206 photolithography Methods 0.000 claims 2
- 239000011241 protective layer Substances 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 5
- 230000007812 deficiency Effects 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical class [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
- G02F1/136236—Active matrix addressed cells for reducing the number of lithographic steps using a grey or half tone lithographic process
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
전자이동도(㎠/v.s) | 문턱전압(V) | S 팩터 | Ion/Ioff | |
실시예1 | 4.35 | 2.2 | 2.2 | 1.03×105 |
비교예 | 1.1 | 11.6 | 3.5 | 8.02×104 |
Claims (10)
- 기판상기 기판 상에 위치하는 게이트 전극상기 게이트 전극 상에 위치하는 게이트 절연막상기 게이트 절연막 상에 위치하는 투명 반도체층상기 투명 반도체층 상의 일부에 위치하는 식각 보호막 및상기 식각 보호막의 일부를 노출시키며 상기 보호막 상에 위치하며, 상기 투명 반도체층과 연결되는 소스/드레인 전극을 특징으로 하는 박막 트랜지스터.
- 제 1항에 있어서,상기 기판은 단결정 실리콘, 유리, 플라스틱, 사파이어 또는 석영기판 중 어느 하나로 이루어진 것을 특징으로 하는 박막 트랜지스터.
- 제 1항에 있어서,상기 투명 반도체층은 ZnO, ZnSnO, ZnlnO, ZnGaO, ZnlnGaO, ZnSnO 중 어느 하나로 이루어지는 것을 특징으로 하는 박막 트랜지스터.
- 제 1항에 있어서,상기 식각 보호막은 실리콘 산화막, 실리콘 질화막 또는 이들의 다중층인 것 을 특징으로 하는 박막 트랜지스터.
- 기판을 제공하고상기 기판 상에 버퍼층을 형성하고상기 버퍼층 상에 게이트 전극을 형성하고상기 기판 전면에 걸쳐 게이트 절연막을 형성하고상기 게이트 절연막 상에 투명 반도체 물질로 형성된 막을 형성하고상기 기판 전면에 걸쳐 보호막을 형성하고상기 보호막을 패터닝하여 식각 보호막을 형성하고상기 투명 반도체 물질로 형성된 막을 패터닝하여 투명 반도체층을 형성하고상기 보호막 상에 위치하되 보호막의 일부를 노출시키고, 상기 투명 반도체층과 일부가 연결되도록 건식식각하여 소스/드레인 전극을 형성하는 것을 특징으로 하는 박막 트랜지스터의 제조방법.
- 제 5항에 있어서,상기 패터닝은 포토리소그래피 공정을 사용하는 것을 특징으로 하는 박막 트랜지스터의 제조방법.
- 제 5항에 있어서,상기 포토리소그래피 과정은 백노광 공정을 포함하는 것을 특징으로 하는 박 막 트랜지스터의 제조방법.
- 제 5항에 있어서,상기 식각 보호막과 상기 투명 반도체층은 하프-톤 마스크를 사용하여 동시에 형성하는 것을 포함하는 박막 트랜지스터의 제조방법.
- 제 5항에 있어서,상기 투명 반도체층은 스퍼터링, 화학증착법 또는 원자막증착법에 의해 형성하는 것을 특징으로 하는 박막 트랜지스터의 제조방법.
- 제 5항에 있어서,상기 식각 보호막은 실리콘 산화막, 실리콘 질화막 또는 이들의 다중층으로 형성하는 것을 특징으로 하는 박막 트랜지스터의 제조방법.
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KR1020080045497A KR100944808B1 (ko) | 2008-05-16 | 2008-05-16 | 박막 트랜지스터 및 그의 제조방법 |
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KR1020080045497A KR100944808B1 (ko) | 2008-05-16 | 2008-05-16 | 박막 트랜지스터 및 그의 제조방법 |
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KR20090119446A true KR20090119446A (ko) | 2009-11-19 |
KR100944808B1 KR100944808B1 (ko) | 2010-02-26 |
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KR101835525B1 (ko) | 2011-02-17 | 2018-04-20 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
CN102543867A (zh) * | 2012-03-08 | 2012-07-04 | 南京中电熊猫液晶显示科技有限公司 | 一种金属氧化物薄膜晶体管阵列基板的制造方法 |
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KR101174776B1 (ko) * | 2005-10-12 | 2012-08-20 | 엘지디스플레이 주식회사 | Tft 어레이 기판 및 그 제조방법 |
KR101277218B1 (ko) * | 2006-06-29 | 2013-06-24 | 엘지디스플레이 주식회사 | 박막 트랜지스터 제조방법 및 액정표시소자의 제조방법 |
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