KR20090115915A - 포로겐, 포로겐화 전구체, 및 이들을 사용하여 낮은 유전 상수를 갖는 다공성 유기실리카 유리 필름을 제공하는 방법 - Google Patents

포로겐, 포로겐화 전구체, 및 이들을 사용하여 낮은 유전 상수를 갖는 다공성 유기실리카 유리 필름을 제공하는 방법 Download PDF

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KR20090115915A
KR20090115915A KR1020090038919A KR20090038919A KR20090115915A KR 20090115915 A KR20090115915 A KR 20090115915A KR 1020090038919 A KR1020090038919 A KR 1020090038919A KR 20090038919 A KR20090038919 A KR 20090038919A KR 20090115915 A KR20090115915 A KR 20090115915A
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cyclic
polyunsaturated
saturated
straight
monounsaturated
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Korean (ko)
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레이몬드 니콜라스 브르티스
마크 레너드 오닐
진 루이스 빈센트
아론 스코트 루카스
메리 캐서린 하스
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에어 프로덕츠 앤드 케미칼스, 인코오포레이티드
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6538—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by exposure to UV light
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

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  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
KR1020090038919A 2008-05-05 2009-05-04 포로겐, 포로겐화 전구체, 및 이들을 사용하여 낮은 유전 상수를 갖는 다공성 유기실리카 유리 필름을 제공하는 방법 Ceased KR20090115915A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/115,087 2008-05-05
US12/115,087 US20080268177A1 (en) 2002-05-17 2008-05-05 Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films with Low Dielectric Constants

Related Child Applications (1)

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KR1020120060323A Division KR20120073190A (ko) 2008-05-05 2012-06-05 포로겐, 포로겐화 전구체, 및 이들을 사용하여 낮은 유전 상수를 갖는 다공성 유기실리카 유리 필름을 제공하는 방법

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KR20090115915A true KR20090115915A (ko) 2009-11-10

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KR1020090038919A Ceased KR20090115915A (ko) 2008-05-05 2009-05-04 포로겐, 포로겐화 전구체, 및 이들을 사용하여 낮은 유전 상수를 갖는 다공성 유기실리카 유리 필름을 제공하는 방법
KR1020120060323A Ceased KR20120073190A (ko) 2008-05-05 2012-06-05 포로겐, 포로겐화 전구체, 및 이들을 사용하여 낮은 유전 상수를 갖는 다공성 유기실리카 유리 필름을 제공하는 방법
KR1020150061429A Ceased KR20150059149A (ko) 2008-05-05 2015-04-30 포로겐, 포로겐화 전구체, 및 이들을 사용하여 낮은 유전 상수를 갖는 다공성 유기실리카 유리 필름을 제공하는 방법
KR1020170092984A Active KR101911798B1 (ko) 2008-05-05 2017-07-21 포로겐, 포로겐화 전구체, 및 이들을 사용하여 낮은 유전 상수를 갖는 다공성 유기실리카 유리 필름을 제공하는 방법
KR1020170092987A Active KR101912534B1 (ko) 2008-05-05 2017-07-21 포로겐, 포로겐화 전구체, 및 이들을 사용하여 낮은 유전 상수를 갖는 다공성 유기실리카 유리 필름을 제공하는 방법

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KR1020120060323A Ceased KR20120073190A (ko) 2008-05-05 2012-06-05 포로겐, 포로겐화 전구체, 및 이들을 사용하여 낮은 유전 상수를 갖는 다공성 유기실리카 유리 필름을 제공하는 방법
KR1020150061429A Ceased KR20150059149A (ko) 2008-05-05 2015-04-30 포로겐, 포로겐화 전구체, 및 이들을 사용하여 낮은 유전 상수를 갖는 다공성 유기실리카 유리 필름을 제공하는 방법
KR1020170092984A Active KR101911798B1 (ko) 2008-05-05 2017-07-21 포로겐, 포로겐화 전구체, 및 이들을 사용하여 낮은 유전 상수를 갖는 다공성 유기실리카 유리 필름을 제공하는 방법
KR1020170092987A Active KR101912534B1 (ko) 2008-05-05 2017-07-21 포로겐, 포로겐화 전구체, 및 이들을 사용하여 낮은 유전 상수를 갖는 다공성 유기실리카 유리 필름을 제공하는 방법

Country Status (6)

Country Link
US (1) US20080268177A1 (https=)
EP (1) EP2116632A3 (https=)
JP (2) JP5270442B2 (https=)
KR (5) KR20090115915A (https=)
CN (2) CN101575700A (https=)
TW (1) TWI397606B (https=)

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WO2011106218A3 (en) * 2010-02-25 2012-01-12 Applied Materials, Inc. Ultra low dielectric materials using hybrid precursors containing silicon with organic functional groups by plasma-enhanced chemical vapor deposition
WO2011103282A3 (en) * 2010-02-17 2012-02-02 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude VAPOR DEPOSITION METHODS OF SiCOH LOW-K FILMS

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US8703625B2 (en) * 2010-02-04 2014-04-22 Air Products And Chemicals, Inc. Methods to prepare silicon-containing films
EP2363512A1 (en) * 2010-02-04 2011-09-07 Air Products And Chemicals, Inc. Methods to prepare silicon-containing films
CN102859666B (zh) * 2010-02-09 2015-05-13 西江大学校产学协力团 纳米多孔超低介电薄膜及其包括高温臭氧处理的制备方法
CN101789418B (zh) * 2010-03-11 2011-12-28 复旦大学 一种多孔超低介电常数材料薄膜及其制备方法
US8460753B2 (en) * 2010-12-09 2013-06-11 Air Products And Chemicals, Inc. Methods for depositing silicon dioxide or silicon oxide films using aminovinylsilanes
US8441006B2 (en) * 2010-12-23 2013-05-14 Intel Corporation Cyclic carbosilane dielectric films
US8772154B2 (en) * 2011-06-17 2014-07-08 GlobalFoundries, Inc. Integrated circuits including barrier polish stop layers and methods for the manufacture thereof
US9054110B2 (en) 2011-08-05 2015-06-09 Taiwan Semiconductor Manufacturing Company, Ltd. Low-K dielectric layer and porogen
DE102013215400A1 (de) * 2013-08-06 2015-02-12 Robert Bosch Gmbh Silicat-Aerogel und Verfahren zu seiner Herstellung
CN104008997A (zh) * 2014-06-04 2014-08-27 复旦大学 一种超低介电常数绝缘薄膜及其制备方法
US9922818B2 (en) * 2014-06-16 2018-03-20 Versum Materials Us, Llc Alkyl-alkoxysilacyclic compounds
KR102058595B1 (ko) * 2015-02-06 2019-12-23 버슘머트리얼즈 유에스, 엘엘씨 탄소 도핑된 규소 함유 필름을 위한 조성물 및 이의 사용 방법
US20180047898A1 (en) * 2015-03-09 2018-02-15 Versum Materials Us, Llc Process for depositing porous organosilicate glass films for use as resistive random access memory
US20170125241A1 (en) * 2015-10-30 2017-05-04 Applied Materials, Inc. Low temp single precursor arc hard mask for multilayer patterning application
US10249489B2 (en) * 2016-11-02 2019-04-02 Versum Materials Us, Llc Use of silyl bridged alkyl compounds for dense OSG films
US11749563B2 (en) * 2018-06-27 2023-09-05 Taiwan Semiconductor Manufacturing Co., Ltd. Interlayer dielectric layer
EP4325548A3 (en) * 2018-08-10 2024-04-10 Versum Materials US, LLC Silicon compounds and methods for depositing films using same
KR102373339B1 (ko) 2018-08-10 2022-03-10 버슘머트리얼즈 유에스, 엘엘씨 규소 화합물 및 이를 사용하여 막을 증착시키는 방법
CN113166937A (zh) * 2018-11-27 2021-07-23 弗萨姆材料美国有限责任公司 1-甲基-1-异丙氧基-硅杂环烷烃和由其制备的致密有机硅膜
US11512171B2 (en) * 2019-08-09 2022-11-29 Merck Patent Gmbh Low dielectric constant siliceous film manufacturing composition and methods for producing cured film and electronic device using the same
TW202111153A (zh) * 2019-09-13 2021-03-16 美商慧盛材料美國責任有限公司 單烷氧基矽烷及二烷氧基矽烷和使用其製造的密有機二氧化矽膜
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CN103147066A (zh) 2013-06-12
JP2009272632A (ja) 2009-11-19
EP2116632A2 (en) 2009-11-11
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