KR20090115355A - 극미세 결정립 폴리 실리콘 박막 증착 방법 - Google Patents
극미세 결정립 폴리 실리콘 박막 증착 방법 Download PDFInfo
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- KR20090115355A KR20090115355A KR1020080041177A KR20080041177A KR20090115355A KR 20090115355 A KR20090115355 A KR 20090115355A KR 1020080041177 A KR1020080041177 A KR 1020080041177A KR 20080041177 A KR20080041177 A KR 20080041177A KR 20090115355 A KR20090115355 A KR 20090115355A
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- Prior art keywords
- thin film
- gas
- oxygen
- depositing
- silicon
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- 239000010409 thin film Substances 0.000 title claims abstract description 53
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 32
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 30
- 238000000151 deposition Methods 0.000 title claims abstract description 27
- 239000007789 gas Substances 0.000 claims abstract description 75
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 30
- 239000001301 oxygen Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 23
- 239000010703 silicon Substances 0.000 claims abstract description 23
- 238000007736 thin film deposition technique Methods 0.000 claims description 15
- 238000005137 deposition process Methods 0.000 claims description 14
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 8
- 229910000077 silane Inorganic materials 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 4
- XSEBTKCWGCYIBB-UHFFFAOYSA-N disiline Chemical compound C1=C[SiH]=[SiH]C=C1 XSEBTKCWGCYIBB-UHFFFAOYSA-N 0.000 claims description 2
- 230000008021 deposition Effects 0.000 abstract description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 239000010408 film Substances 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- -1 N 2 O Chemical compound 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
Abstract
Description
Claims (8)
- 기판 상에 박막을 증착하는 증착 공정을 이용한 박막 증착 방법에 있어서,상기 기판이 로딩된 챔버 내에 소스 가스를 공급하여 상기 박막을 증착하되,상기 소스 가스는,실리콘 계열(silicon-based)의 가스 및 산소 계열(Oxygen-based)의 가스를 포함하는 것을 특징으로 하는 극미세 결정립 폴리 실리콘 박막 증착 방법.
- 청구항 1에 있어서,상기 실리콘 계열의 가스에 대한 상기 산소 계열의 가스의 혼합비율은,0.20 이하(0 제외)인 것을 특징으로 하는 극미세 결정립 폴리 실리콘 박막 증착 방법.
- 청구항 1에 있어서,상기 박막 내의 산소는,20atomic%(atomic percentage) 이하(0 제외)인 것을 특징으로 하는 극미세 결정립 폴리 실리콘 박막 증착 방법.
- 청구항 1에 있어서,상기 증착 공정의 온도가 580℃ 내지 650℃일 때 상기 증착 공정의 압력은 100torr 내지 300torr인 것을 특징으로 하는 극미세 결정립 폴리 실리콘 박막 증착 방법.
- 청구항 1에 있어서,상기 증착 공정의 온도가 650℃ 내지 750℃일 때 상기 증착 공정의 압력은 5torr 내지 100torr인 것을 특징으로 하는 극미세 결정립 폴리 실리콘 박막 증착 방법.
- 청구항 1에 있어서,상기 극미세 결정립 폴리 실리콘 박막 증착 방법은,상기 기판 상에 증착된 상기 박막에 대한 열처리 공정을 더 포함하여 수행하는 것을 특징으로 하는 극미세 결정립 폴리 실리콘 박막 증착 방법.
- 청구항 1에 있어서,상기 실리콘 계열의 가스는,SiH4(silane), Si2H6(disiline) 또는 Si를 포함하는 가스인 것을 특징으로 하는 극미세 결정립 폴리 실리콘 박막 증착 방법.
- 청구항 1에 있어서,상기 산소 계열의 가스는,N2O 또는 산소(Oxygen)를 포함하는 소스 가스인 것을 특징으로 하는 극미세 결정립 폴리 실리콘 박막 증착 방법.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080041177A KR101012102B1 (ko) | 2008-05-02 | 2008-05-02 | 극미세 결정립 폴리 실리콘 박막 증착 방법 |
CN2009801159135A CN102017086B (zh) | 2008-05-02 | 2009-04-29 | 用于沉积具有超细晶粒的多晶硅薄膜的方法 |
US12/990,629 US20110111582A1 (en) | 2008-05-02 | 2009-04-29 | Method for depositing ultra fine grain polysilicon thin film |
PCT/KR2009/002266 WO2009134080A2 (ko) | 2008-05-02 | 2009-04-29 | 극미세 결정립 폴리 실리콘 박막 증착 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020080041177A KR101012102B1 (ko) | 2008-05-02 | 2008-05-02 | 극미세 결정립 폴리 실리콘 박막 증착 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20090115355A true KR20090115355A (ko) | 2009-11-05 |
KR101012102B1 KR101012102B1 (ko) | 2011-02-07 |
Family
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KR1020080041177A KR101012102B1 (ko) | 2008-05-02 | 2008-05-02 | 극미세 결정립 폴리 실리콘 박막 증착 방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20110111582A1 (ko) |
KR (1) | KR101012102B1 (ko) |
CN (1) | CN102017086B (ko) |
WO (1) | WO2009134080A2 (ko) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US8765582B2 (en) * | 2012-09-04 | 2014-07-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for extreme ultraviolet electrostatic chuck with reduced clamp effect |
CN105529249A (zh) * | 2016-02-29 | 2016-04-27 | 上海华力微电子有限公司 | 一种多晶硅制备方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
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US4344985A (en) * | 1981-03-27 | 1982-08-17 | Rca Corporation | Method of passivating a semiconductor device with a multi-layer passivant system by thermally growing a layer of oxide on an oxygen doped polycrystalline silicon layer |
JPH0786515A (ja) * | 1993-09-16 | 1995-03-31 | Nec Corp | ポリシリコン抵抗体の形成方法 |
JP3432601B2 (ja) * | 1994-06-17 | 2003-08-04 | 東京エレクトロン株式会社 | 成膜方法 |
JP2874618B2 (ja) * | 1995-11-22 | 1999-03-24 | 日本電気株式会社 | シリコン半導体基板及びその製造方法 |
KR100212699B1 (ko) * | 1996-07-26 | 1999-08-02 | 윤종용 | 산소 화합물이 함께 도핑된 다결정 실리콘막 제조 방법 및 장치 |
US6455372B1 (en) * | 2000-08-14 | 2002-09-24 | Micron Technology, Inc. | Nucleation for improved flash erase characteristics |
US7005160B2 (en) * | 2003-04-24 | 2006-02-28 | Asm America, Inc. | Methods for depositing polycrystalline films with engineered grain structures |
JP4474596B2 (ja) | 2003-08-29 | 2010-06-09 | キヤノンアネルバ株式会社 | シリコンナノ結晶構造体の形成方法及び形成装置 |
JP4938243B2 (ja) * | 2005-03-04 | 2012-05-23 | ラピスセミコンダクタ株式会社 | 半導体装置及びその製造方法、並びに、半導体ウエハ及び半導体ウエハの製造方法 |
KR100784406B1 (ko) * | 2005-09-21 | 2007-12-11 | 주식회사 유진테크 | 싱글챔버식 씨브이디장치를 이용한 열산화막 제조방법 및그 제조장치 |
CN100446180C (zh) * | 2005-10-28 | 2008-12-24 | 南开大学 | 溶液法金属诱导晶化大晶粒多晶硅薄膜材料及制备和应用 |
KR100737829B1 (ko) * | 2005-10-31 | 2007-07-12 | 고려대학교 산학협력단 | 나노 결정 실리콘의 제조 방법 |
KR101012103B1 (ko) * | 2008-05-02 | 2011-02-07 | 주식회사 유진테크 | 극미세 결정립 폴리 실리콘 박막 증착 방법 |
-
2008
- 2008-05-02 KR KR1020080041177A patent/KR101012102B1/ko active IP Right Grant
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2009
- 2009-04-29 US US12/990,629 patent/US20110111582A1/en not_active Abandoned
- 2009-04-29 WO PCT/KR2009/002266 patent/WO2009134080A2/ko active Application Filing
- 2009-04-29 CN CN2009801159135A patent/CN102017086B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
KR101012102B1 (ko) | 2011-02-07 |
WO2009134080A3 (ko) | 2010-02-11 |
CN102017086B (zh) | 2012-10-10 |
CN102017086A (zh) | 2011-04-13 |
WO2009134080A2 (ko) | 2009-11-05 |
US20110111582A1 (en) | 2011-05-12 |
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