KR20090084849A - 무전해 도금에 의해 금속 박막을 형성한 도금물 및 그 제조방법 - Google Patents
무전해 도금에 의해 금속 박막을 형성한 도금물 및 그 제조방법 Download PDFInfo
- Publication number
- KR20090084849A KR20090084849A KR1020097009166A KR20097009166A KR20090084849A KR 20090084849 A KR20090084849 A KR 20090084849A KR 1020097009166 A KR1020097009166 A KR 1020097009166A KR 20097009166 A KR20097009166 A KR 20097009166A KR 20090084849 A KR20090084849 A KR 20090084849A
- Authority
- KR
- South Korea
- Prior art keywords
- metal
- thin film
- plating
- copper
- electroless
- Prior art date
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 201
- 239000002184 metal Substances 0.000 title claims abstract description 201
- 239000010409 thin film Substances 0.000 title claims abstract description 149
- 238000007772 electroless plating Methods 0.000 title claims abstract description 40
- 239000000463 material Substances 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000007747 plating Methods 0.000 claims abstract description 161
- 239000000956 alloy Substances 0.000 claims abstract description 78
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 78
- 230000003197 catalytic effect Effects 0.000 claims abstract description 36
- 230000004888 barrier function Effects 0.000 claims abstract description 30
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 97
- 229910052802 copper Inorganic materials 0.000 claims description 97
- 239000010949 copper Substances 0.000 claims description 97
- 238000006467 substitution reaction Methods 0.000 claims description 62
- 230000009467 reduction Effects 0.000 claims description 47
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 20
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 17
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 16
- 229910052707 ruthenium Inorganic materials 0.000 claims description 16
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 16
- 229910052721 tungsten Inorganic materials 0.000 claims description 16
- 239000010937 tungsten Substances 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 10
- 229910017052 cobalt Inorganic materials 0.000 claims description 10
- 239000010941 cobalt Substances 0.000 claims description 10
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 10
- 229910052742 iron Inorganic materials 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 229910052758 niobium Inorganic materials 0.000 claims description 10
- 239000010955 niobium Substances 0.000 claims description 10
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 10
- 229910052703 rhodium Inorganic materials 0.000 claims description 10
- 239000010948 rhodium Substances 0.000 claims description 10
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 239000011135 tin Substances 0.000 claims description 10
- 229910052718 tin Inorganic materials 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 7
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 238000001941 electron spectroscopy Methods 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052741 iridium Inorganic materials 0.000 claims description 5
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 239000011777 magnesium Substances 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 239000011701 zinc Substances 0.000 claims description 5
- 238000005477 sputtering target Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 239000003054 catalyst Substances 0.000 abstract description 18
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- 230000002829 reductive effect Effects 0.000 abstract description 3
- 238000006073 displacement reaction Methods 0.000 abstract 4
- 239000010410 layer Substances 0.000 description 42
- 238000006722 reduction reaction Methods 0.000 description 31
- 239000010408 film Substances 0.000 description 26
- HHLFWLYXYJOTON-UHFFFAOYSA-N glyoxylic acid Chemical compound OC(=O)C=O HHLFWLYXYJOTON-UHFFFAOYSA-N 0.000 description 10
- 239000007788 liquid Substances 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 238000005755 formation reaction Methods 0.000 description 6
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 5
- 229910001431 copper ion Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 229910000365 copper sulfate Inorganic materials 0.000 description 4
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 4
- 230000009257 reactivity Effects 0.000 description 4
- 230000001603 reducing effect Effects 0.000 description 4
- 239000002202 Polyethylene glycol Substances 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000003638 chemical reducing agent Substances 0.000 description 3
- 239000008139 complexing agent Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229920001223 polyethylene glycol Polymers 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- -1 sodium and potassium Chemical class 0.000 description 3
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical group N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000007429 general method Methods 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-M hydrosulfide Chemical compound [SH-] RWSOTUBLDIXVET-UHFFFAOYSA-M 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 239000003002 pH adjusting agent Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- VZCCTDLWCKUBGD-UHFFFAOYSA-N 8-[[4-(dimethylamino)phenyl]diazenyl]-10-phenylphenazin-10-ium-2-amine;chloride Chemical compound [Cl-].C1=CC(N(C)C)=CC=C1N=NC1=CC=C(N=C2C(C=C(N)C=C2)=[N+]2C=3C=CC=CC=3)C2=C1 VZCCTDLWCKUBGD-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000006193 liquid solution Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000000276 potassium ferrocyanide Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- WZWGGYFEOBVNLA-UHFFFAOYSA-N sodium;dihydrate Chemical compound O.O.[Na] WZWGGYFEOBVNLA-UHFFFAOYSA-N 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- XOGGUFAVLNCTRS-UHFFFAOYSA-N tetrapotassium;iron(2+);hexacyanide Chemical compound [K+].[K+].[K+].[K+].[Fe+2].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-] XOGGUFAVLNCTRS-UHFFFAOYSA-N 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/584—Non-reactive treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
- C23C18/1875—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment only one step pretreatment
- C23C18/1879—Use of metal, e.g. activation, sensitisation with noble metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
- C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/54—Contact plating, i.e. electroless electrochemical plating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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Abstract
Description
Claims (22)
- 기재상에, 무전해도금의 촉매 활성을 가진 금속(A)와, 무전해도금액에 함유된 금속 이온과 치환 도금이 가능한 금속(B)의 합금 박막이 형성되고, 그 위에 무전해치환 및 환원 도금에 의해 금속 박막이 형성된 도금물로서,상기 촉매 활성을 가진 금속(A)와, 상기 치환 도금 가능한 금속(B)의 합금 박막이, 촉매 활성을 가진 금속(A)를 5원자%이상, 40원자%이하로 하는 조성이며,상기 무전해치환 및 환원 도금에 의해 형성된 금속 박막이 두께 10nm이하이고 저항율 10μΩ·cm이하인 금속 박막인 것을 특징으로 하는 도금물.
- 제 1 항에 있어서, 무전해치환 및 환원 도금에 의해 형성된 금속 박막이 두께 10nm이하이고 저항율 5μΩ·cm이하인 것을 특징으로 하는 도금물.
- 제 1 항 또는 제 2 항에 있어서, 상기 금속 박막 위에 배선부가 도금으로 더 형성된 것을 특징으로 하는 도금물.
- 제 1 항 내지 제 3 항중의 어느 한 항에 있어서, 합금 박막과 무전해치환 및 환원 도금으로 형성된 금속 박막과의 계면의 산소 농도가 오제이 전자 분광법으로 분석하여 1원자%이하인 것을 특징으로 하는 도금물.
- 제 3 항 또는 제 4 항에 있어서, 촉매 활성을 가진 금속(A)가, 로듐, 루테늄, 이리듐으로부터 선택되는 적어도 1종의 금속이고,치환 도금 가능한 금속(B)가, 철, 니켈, 코발트, 텅스텐, 니오브, 주석, 마그네슘, 알루미늄, 아연, 납으로부터 선택되는 적어도 1종의 금속이며,합금 박막상에 무전해치환 및 환원 도금으로 형성된 금속 박막이, 금, 은, 구리, 니켈, 코발트, 철, 주석으로부터 선택되는 적어도 1종의 금속으로 이루어진 박막이고, 배선부가 구리 또는 구리를 주성분으로 하는 합금인 것을 특징으로 하는 도금물.
- 제 5 항에 있어서, 치환 도금 가능한 금속(B)가, 무전해치환 및 환원 도금으로 형성되는 금속 박막의 금속에 대해서 확산을 방지하는 배리어 기능을 가지는 것을 특징으로 하는 도금물.
- 제 5 항 또는 제 6 항에 있어서, 촉매 활성을 가진 금속(A)가, 로듐, 루테늄으로부터 선택되는 적어도 1종의 금속이고,치환 도금 가능한 금속(B)가, 텅스텐, 니오브로부터 선택되는 적어도 1종의 금속이며,합금 박막상에 무전해치환 및 환원 도금으로 형성된 금속 박막이 구리 또는 구리를 주성분으로 하는 합금 박막이고,배선부가 구리 또는 구리를 주성분으로 하는 합금인 것을 특징으로 하는 도 금물.
- 제 5 항 내지 제 7 항중의 어느 한 항에 있어서,촉매 활성을 가진 금속(A)가 루테늄이고,치환 도금 가능한 금속(B)가 텅스텐이며,합금 박막상에 무전해치환 및 환원 도금으로 형성된 금속 박막이 구리박막이고,배선부가 구리인 것을 특징으로 하는 도금물.
- 제 1 항 내지 제 8 항중의 어느 한 항에 있어서, 무전해치환 및 환원 도금에 의해 형성된 금속 박막이 다마신구리배선용 시드층인 것을 특징으로 하는 도금물.
- 제 1 항 내지 제 9 항중의 어느 한 항에 있어서, 합금 박막이 스퍼터링에 의해 형성된 것을 특징으로 하는 도금물.
- 제 1 항 내지 제 10 항중의 어느 한 항에 기재된 도금물을 구성에 포함하는 것을 특징으로 하는 반도체소자.
- 제 10 항에 기재된 도금물의 합금 박막을 형성하기 위해서 이용하는 스퍼터링 타깃.
- 기재상에, 무전해도금의 촉매 활성을 가진 금속(A)와, 무전해도금액에 함유된 금속 이온과 치환 도금이 가능한 금속(B)의 합금 박막을 형성하고, 그 위에 무전해치환 및 환원 도금에 의해 금속 박막을 형성하는 도금물의 제조방법으로서,상기 촉매 활성을 가진 금속(A)와, 상기 치환 도금 가능한 금속(B)의 합금 박막이, 촉매 활성을 가진 금속(A)를 5원자%이상, 40원자%이하로 하는 조성이며,상기 무전해치환 및 환원 도금에 의해 형성하는 금속 박막이 두께 10nm이하이고 저항율 10μΩ·cm이하인 금속 박막인 것을 특징으로 하는 도금물의 제조방법.
- 제 13 항에 있어서, 무전해치환 및 환원 도금에 의해 형성하는 금속 박막이 두께 10nm이하이고 저항율 5μΩ·cm이하인 것을 특징으로 하는 도금물의 제조방법.
- 제 13 항 또는 제 14 항에 있어서, 상기 금속 박막 위에 배선부를 도금으로 더 형성하는 것을 특징으로 하는 도금물의 제조방법.
- 제 13 항 내지 제 15 항중의 어느 한 항에 있어서, 합금 박막과 무전해치환 및 환원 도금으로 형성하는 금속 박막과의 계면의 산소 농도가 오제이 전자 분광법으로 분석하여 1원자% 이하인 것을 특징으로 하는 도금물의 제조방법.
- 제 15 항 또는 제 16 항에 있어서, 촉매 활성을 가진 금속(A)가, 로듐, 루테늄, 이리듐으로부터 선택되는 적어도 1종의 금속이고,치환 도금 가능한 금속(B)가, 철, 니켈, 코발트, 텅스텐, 니오브, 주석, 마그네슘, 알루미늄, 아연, 납으로부터 선택되는 적어도 1종의 금속이며,합금 박막상에 무전해치환 및 환원 도금으로 형성하는 금속 박막이, 금, 은, 구리, 니켈, 코발트, 철, 주석으로부터 선택되는 적어도 1종의 금속으로 이루어진 박막이고,배선부가 구리 또는 구리를 주성분으로 하는 합금인 것을 특징으로 하는 도금물의 제조방법.
- 제 17 항에 있어서, 치환 도금 가능한 금속(B)가, 무전해치환 및 환원 도금으로 형성하는 금속 박막의 금속에 대해서 확산을 방지하는 배리어 기능을 가진 것을 특징으로 하는 도금물의 제조방법.
- 제 17 항 또는 제 18 항에 있어서, 촉매 활성을 가진 금속(A)가, 로듐, 루테늄으로부터 선택되는 적어도 1종의 금속이고,치환 도금 가능한 금속(B)가, 텅스텐, 니오브로부터 선택되는 적어도 1종의 금속이며,합금 박막상에 무전해치환 및 환원 도금으로 형성하는 금속 박막이 구리 또 는 구리를 주성분으로 하는 합금 박막이고,배선부가 구리 또는 구리를 주성분으로 하는 합금인 것을 특징으로 하는 도금물의 제조방법.
- 제 17 항 내지 제 19 항 중의 어느 한 항에 있어서, 촉매 활성을 가진 금속(A)가 루테늄이고,치환 도금 가능한 금속(B)가 텅스텐이며,합금 박막상에 무전해치환 및 환원 도금으로 형성하는 금속 박막이 구리박막이며, 배선부가 구리인 것을 특징으로 하는 도금물의 제조방법.
- 제 13 항 내지 제 20 항중의 어느 한 항에 있어서, 무전해치환 및 환원 도금에 의해 형성하는 금속 박막이 다마신구리배선용 시드층인 것을 특징으로 하는 도금물의 제조방법.
- 제 13 항 내지 제 21 항중의 어느 한 항에 있어서, 합금 박막을 스퍼터링에 의해 형성하는 것을 특징으로 하는 도금물의 제조방법.
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EP (2) | EP2067879B1 (ko) |
JP (1) | JP4376959B2 (ko) |
KR (1) | KR101110447B1 (ko) |
CN (1) | CN101578393B (ko) |
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Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8394508B2 (en) * | 2007-07-31 | 2013-03-12 | Nippon Mining & Metals Co., Ltd. | Plated article having metal thin film formed by electroless plating |
KR101186714B1 (ko) | 2007-12-17 | 2012-09-27 | 닛코킨조쿠 가부시키가이샤 | 기판, 및 그 제조방법 |
EP2224472B8 (en) | 2007-12-17 | 2014-03-19 | JX Nippon Mining & Metals Corporation | Substrate and method for manufacturing the same |
EP2237313B1 (en) * | 2008-03-19 | 2014-07-30 | JX Nippon Mining & Metals Corporation | ELECTRONIC MEMBER WHEREIN a BARRIER-SEED LAYER IS FORMED ON a BASE layer |
WO2009116346A1 (ja) | 2008-03-19 | 2009-09-24 | 日鉱金属株式会社 | 基材上にバリア兼シード層が形成された電子部材 |
JP5388191B2 (ja) * | 2009-05-26 | 2014-01-15 | Jx日鉱日石金属株式会社 | 貫通シリコンビアを有するめっき物及びその形成方法 |
US8659359B2 (en) | 2010-04-22 | 2014-02-25 | Freescale Semiconductor, Inc. | RF power transistor circuit |
US9281283B2 (en) | 2012-09-12 | 2016-03-08 | Freescale Semiconductor, Inc. | Semiconductor devices with impedance matching-circuits |
US9438184B2 (en) | 2014-06-27 | 2016-09-06 | Freescale Semiconductor, Inc. | Integrated passive device assemblies for RF amplifiers, and methods of manufacture thereof |
US10432152B2 (en) | 2015-05-22 | 2019-10-01 | Nxp Usa, Inc. | RF amplifier output circuit device with integrated current path, and methods of manufacture thereof |
US9692363B2 (en) | 2015-10-21 | 2017-06-27 | Nxp Usa, Inc. | RF power transistors with video bandwidth circuits, and methods of manufacture thereof |
US9571044B1 (en) | 2015-10-21 | 2017-02-14 | Nxp Usa, Inc. | RF power transistors with impedance matching circuits, and methods of manufacture thereof |
KR101817930B1 (ko) * | 2016-01-19 | 2018-01-12 | 주식회사 써피스텍 | 연속반복 치환에 의한 후층 주석 도금 방법 |
WO2021020064A1 (ja) * | 2019-07-31 | 2021-02-04 | 昭和電工株式会社 | 積層体およびその製造方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN85100096B (zh) * | 1985-04-01 | 1988-12-07 | 清华大学 | 平面磁控溅射靶及其镀膜方法 |
US5824599A (en) * | 1996-01-16 | 1998-10-20 | Cornell Research Foundation, Inc. | Protected encapsulation of catalytic layer for electroless copper interconnect |
JPH11312680A (ja) * | 1998-04-30 | 1999-11-09 | Nec Corp | 配線の形成方法 |
US6236113B1 (en) | 1999-03-05 | 2001-05-22 | Sharp Laboratories Of America, Inc. | Iridium composite barrier structure and method for same |
KR100338112B1 (ko) * | 1999-12-22 | 2002-05-24 | 박종섭 | 반도체 소자의 구리 금속 배선 형성 방법 |
JP4083968B2 (ja) * | 2000-11-02 | 2008-04-30 | 株式会社東芝 | 半導体装置の製造方法 |
US6977224B2 (en) * | 2000-12-28 | 2005-12-20 | Intel Corporation | Method of electroless introduction of interconnect structures |
JP3768908B2 (ja) | 2001-03-27 | 2006-04-19 | キヤノン株式会社 | 電子放出素子、電子源、画像形成装置 |
US6824666B2 (en) * | 2002-01-28 | 2004-11-30 | Applied Materials, Inc. | Electroless deposition method over sub-micron apertures |
JP3819381B2 (ja) * | 2003-07-07 | 2006-09-06 | 株式会社半導体理工学研究センター | 多層配線構造の製造方法 |
US20060283716A1 (en) * | 2003-07-08 | 2006-12-21 | Hooman Hafezi | Method of direct plating of copper on a ruthenium alloy |
JP2005038086A (ja) | 2003-07-17 | 2005-02-10 | Bank Of Tokyo-Mitsubishi Ltd | ポイント管理方法、icカード及びicカード端末 |
JP2005113174A (ja) | 2003-10-03 | 2005-04-28 | Tanaka Kikinzoku Kogyo Kk | スパッタリング用ルテニウムターゲット及びスパッタリング用ルテニウムターゲットの製造方法 |
EP1681371B1 (en) | 2003-10-17 | 2014-06-04 | JX Nippon Mining & Metals Corporation | Plating solution for electroless copper plating |
US20050274221A1 (en) * | 2004-06-15 | 2005-12-15 | Heraeus, Inc. | Enhanced sputter target alloy compositions |
US20060251872A1 (en) * | 2005-05-05 | 2006-11-09 | Wang Jenn Y | Conductive barrier layer, especially an alloy of ruthenium and tantalum and sputter deposition thereof |
JP2007064348A (ja) | 2005-08-31 | 2007-03-15 | Ntn Corp | 一方向クラッチおよびクラッチ内蔵プーリ |
US7622382B2 (en) * | 2006-03-29 | 2009-11-24 | Intel Corporation | Filling narrow and high aspect ratio openings with electroless deposition |
JP5377831B2 (ja) | 2007-03-14 | 2013-12-25 | Jx日鉱日石金属株式会社 | ダマシン銅配線用シード層形成方法、及びこの方法を用いてダマシン銅配線を形成した半導体ウェハー |
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EP2067879A1 (en) | 2009-06-10 |
WO2009016980A1 (ja) | 2009-02-05 |
EP2554711B1 (en) | 2019-05-15 |
CN101578393B (zh) | 2011-08-03 |
TWI414631B (zh) | 2013-11-11 |
US20100038111A1 (en) | 2010-02-18 |
TW200925318A (en) | 2009-06-16 |
US8163400B2 (en) | 2012-04-24 |
KR101110447B1 (ko) | 2012-03-13 |
CN101578393A (zh) | 2009-11-11 |
JPWO2009016980A1 (ja) | 2010-10-14 |
JP4376959B2 (ja) | 2009-12-02 |
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EP2067879A4 (en) | 2012-08-08 |
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