KR20090044371A - 항온조 수정 발진기 - Google Patents
항온조 수정 발진기 Download PDFInfo
- Publication number
- KR20090044371A KR20090044371A KR1020070110449A KR20070110449A KR20090044371A KR 20090044371 A KR20090044371 A KR 20090044371A KR 1020070110449 A KR1020070110449 A KR 1020070110449A KR 20070110449 A KR20070110449 A KR 20070110449A KR 20090044371 A KR20090044371 A KR 20090044371A
- Authority
- KR
- South Korea
- Prior art keywords
- crystal oscillator
- crystal
- crystal element
- ptc
- constant temperature
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 119
- 239000000919 ceramic Substances 0.000 claims abstract description 58
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 abstract description 13
- 239000000463 material Substances 0.000 abstract description 10
- 239000000853 adhesive Substances 0.000 description 11
- 230000001070 adhesive effect Effects 0.000 description 11
- 230000010355 oscillation Effects 0.000 description 10
- 229920000642 polymer Polymers 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- -1 BaTiO 3 Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 229910021386 carbon form Inorganic materials 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
- H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/08—Holders with means for regulating temperature
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
- H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/0014—Structural aspects of oscillators
- H03B2200/002—Structural aspects of oscillators making use of ceramic material
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Oscillators With Electromechanical Resonators (AREA)
Abstract
Description
항목 | 세라믹 PTC | 폴리머 PTC |
저항 범위 | 300밀리오옴 이하 불가 | 5밀리오옴까지 가능 |
사용온도 범위 | 300도씨에서 사용가능 | 90도씨 이상 불가 |
열전달 속도 | 빠르다 | 느리다 |
사용전류 범위 | 약 2A 내 | 약 10A 내 |
전기적 신뢰성 | 양호 | 보통 |
Claims (4)
- 진동을 발생하는 수정 소자;상기 수정 소자가 수용되는 세라믹 패키지;상기 세라믹 패키지 내에서 상기 수정 소자의 하면과 이격하여 배치되며 상기 수정 소자가 일정 온도를 유지하도록 열을 공급하는 PTC를 포함하는 것을 특징으로 하는 항온조 수정 발진기.
- 제 1 항에 있어서,상기 PTC는 상기 수정 소자의 형상에 대응하는 패널 형상으로 형성된 것을 특징으로 하는 항온조 수정 발진기.
- 제 1 항에 있어서,상기 PTC는 세라믹 물질로 이루어진 것을 특징으로 하는 항온조 수정 발진기.
- 제 1 항에 있어서,상기 수정소자는 SC-cut 수정 진동자인 것을 특징으로 하는 항온조 수정 발진기.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070110449A KR100920398B1 (ko) | 2007-10-31 | 2007-10-31 | 항온조 수정 발진기 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070110449A KR100920398B1 (ko) | 2007-10-31 | 2007-10-31 | 항온조 수정 발진기 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20090044371A true KR20090044371A (ko) | 2009-05-07 |
KR100920398B1 KR100920398B1 (ko) | 2009-10-07 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070110449A KR100920398B1 (ko) | 2007-10-31 | 2007-10-31 | 항온조 수정 발진기 |
Country Status (1)
Country | Link |
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KR (1) | KR100920398B1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101469005B1 (ko) * | 2013-01-31 | 2014-12-08 | (주)파트론 | 수정디바이스 및 그 제조 방법 |
JP7420225B2 (ja) | 2020-03-30 | 2024-01-23 | 株式会社大真空 | 恒温槽型圧電発振器 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05243894A (ja) * | 1992-02-29 | 1993-09-21 | Nippon Dempa Kogyo Co Ltd | Scカットの水晶振動子を用いた発振器 |
JPH07135421A (ja) * | 1993-11-11 | 1995-05-23 | Hokuriku Electric Ind Co Ltd | 水晶発振器 |
JPH0832348A (ja) * | 1994-07-18 | 1996-02-02 | Nippon Dempa Kogyo Co Ltd | Scカットの水晶振動子を用いた発振器 |
JP2000183649A (ja) | 1998-12-18 | 2000-06-30 | Toyo Commun Equip Co Ltd | 高安定圧電発振器 |
-
2007
- 2007-10-31 KR KR1020070110449A patent/KR100920398B1/ko active IP Right Grant
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101469005B1 (ko) * | 2013-01-31 | 2014-12-08 | (주)파트론 | 수정디바이스 및 그 제조 방법 |
JP7420225B2 (ja) | 2020-03-30 | 2024-01-23 | 株式会社大真空 | 恒温槽型圧電発振器 |
Also Published As
Publication number | Publication date |
---|---|
KR100920398B1 (ko) | 2009-10-07 |
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