KR20090011372A - Semiconductor light emitting device and fabrication method thereof, and led package - Google Patents
Semiconductor light emitting device and fabrication method thereof, and led package Download PDFInfo
- Publication number
- KR20090011372A KR20090011372A KR1020070074882A KR20070074882A KR20090011372A KR 20090011372 A KR20090011372 A KR 20090011372A KR 1020070074882 A KR1020070074882 A KR 1020070074882A KR 20070074882 A KR20070074882 A KR 20070074882A KR 20090011372 A KR20090011372 A KR 20090011372A
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Abstract
Description
An embodiment of the present invention relates to a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package.
The semiconductor light emitting device has a light emitting area covering ultraviolet, blue and green areas. In particular, GaN-based nitride semiconductor light emitting devices are applied to optical devices of blue / green LEDs, high-speed switching devices such as metal semiconductor field effect transistors (MESFETs), heterojunction field-effect transistors (HEMTs), and high power devices. It is becoming.
1 is a view showing a conventional semiconductor light emitting device.
Referring to FIG. 1, the semiconductor
The semiconductor
An embodiment of the present invention provides a semiconductor light emitting device having at least one pad penetrating perpendicular to the light emitting device and a method of manufacturing the same.
An embodiment of the present invention provides a semiconductor light emitting device and a light emitting device package using the same that do not require a wire connection.
A semiconductor light emitting device according to an embodiment of the present invention includes a first conductive semiconductor layer; An active layer formed on the first conductive semiconductor layer; A second conductive semiconductor layer formed on the active layer; And a first pad penetrating from a lower end of the first conductive semiconductor layer to a predetermined portion of the second conductive semiconductor layer, insulated from other layers, and connected to the second conductive semiconductor layer.
A semiconductor light emitting device package according to an embodiment of the present invention includes a semiconductor light emitting device in which the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer are sequentially formed; At least one first pad penetrating the semiconductor light emitting device and insulated from another layer, and connected to the second conductive semiconductor layer; At least one second pad penetrated through a lower end of the first conductive semiconductor layer; A first lead frame having a lower end of the first pad mounted thereon; And a second lead frame having a lower end of the second pad mounted thereon.
A method of manufacturing a semiconductor light emitting device according to an embodiment of the present invention includes the steps of sequentially forming a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; Forming a first pad penetrating from the first conductive semiconductor layer to a predetermined portion of the second conductive semiconductor layer, insulated from another layer, and connected to the second conductive semiconductor layer; And forming a second pad penetrating through a portion of the first conductive semiconductor layer.
According to the semiconductor light emitting device, the method for manufacturing the same, and the semiconductor light emitting device package according to the present invention, it is possible to provide a semiconductor light emitting device and a package for which wire connection is unnecessary.
In addition, a heat dissipation path may be provided to the semiconductor light emitting device itself.
In addition, the active layer area can be used as it is, and the luminous efficiency can be improved.
Hereinafter, the present invention will be described with reference to the accompanying drawings.
2 is a side cross-sectional view illustrating a semiconductor light emitting device according to a first embodiment of the present invention, FIG. 3 is a plan view of FIG. 2, and FIG. 4 is a rear view of FIG. 2.
2, the semiconductor
The
A
The first
An
The second
At least one of the third conductive semiconductor layer and the transparent electrode layer may be formed on the second
The semiconductor
The
In the manufacturing process of the
In the manufacturing process of the
Here, the
First and
The first and
3 is a plan view of FIG. 2, in which only the
The
In addition, only the
In the embodiment of the present invention, both the
In addition, the embodiment of the present invention can form a lower portion of the
FIG. 5 is an example package package of the semiconductor light emitting device of FIG. 2.
Referring to FIG. 5, the lower end of the
6 is a semiconductor light emitting device according to a second embodiment of the present invention. This second embodiment will be denoted by the same reference numerals for the same parts as the first embodiment, and description thereof will be omitted.
Referring to FIG. 6, in the semiconductor
The
The
7 is a semiconductor light emitting device according to a third embodiment of the present invention. This third embodiment will be denoted by the same reference numerals for the same parts as the first embodiment, and description thereof will be omitted.
Referring to FIG. 7, the substrate (111 of FIG. 2) is removed from the semiconductor
8 to 17 illustrate a semiconductor light emitting device and a package structure thereof according to a fourth embodiment of the present invention. This fourth embodiment will be denoted by the same reference numerals for the same parts as the first embodiment, and description thereof will be omitted.
Referring to FIG. 8, the semiconductor
The
The
9 illustrates pad holes 121 and 131C of the second
FIG. 10 is a plan view of FIG. 8, in which a
11 through 16 are views illustrating a manufacturing process of the semiconductor
Referring to FIG. 11, the
The
At this time, the semiconductor layer is not grown in the
Referring to FIG. 13, a first insulating
In addition, a third
The first insulating
As shown in FIG. 14, the
As shown in FIG. 15, a second insulating
As shown in FIG. 16, a
The semiconductor
17 is a side cross-sectional view schematically illustrating a package in which the semiconductor light emitting devices of FIG. 3 are mounted on the lead frames 141 and 143.
Referring to FIG. 17, the
In this case, when the forward bias voltage is applied through the
In this case, the semiconductor
In the description of an embodiment according to the present invention, each layer (film), region, pattern or structure is "on" or "under" the substrate, each layer (film), region, pad or patterns. In the case where it is described as being formed in, "on" and "under" include both the meanings of "directly" and "indirectly". In addition, the criteria for the top or bottom of each layer will be described with reference to the drawings.
Although the present invention has been described above with reference to the embodiments, these are only examples and are not intended to limit the present invention, and those skilled in the art to which the present invention pertains may have an abnormality within the scope not departing from the essential characteristics of the present invention. It will be appreciated that various modifications and applications are not illustrated.
For example, each component shown in detail in the embodiment of the present invention may be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.
1 is a side cross-sectional view of a conventional semiconductor light emitting device.
2 is a side cross-sectional view showing a semiconductor light emitting device according to the first embodiment of the present invention.
3 is a plan view of FIG.
4 is a rear view of FIG. 2.
FIG. 5 is a side sectional view showing another example of mounting of the semiconductor light emitting device of FIG. 2; FIG.
6 is a side sectional view showing a semiconductor light emitting device according to a second embodiment of the present invention;
7 is a side cross-sectional view showing a semiconductor light emitting device according to a third embodiment of the present invention.
8 is a side sectional view showing a semiconductor light emitting device according to a fourth embodiment of the present invention.
FIG. 9 illustrates pad holes in the second conductive semiconductor layer of FIG. 8; FIG.
10 is a plan view of FIG. 8.
11 to 16 illustrate a process of manufacturing the semiconductor light emitting device of FIG. 8.
17 is a view showing a package of the semiconductor light emitting device of FIG.
<Explanation of symbols for main parts of drawing>
100,100A, 110B, 100C: semiconductor light emitting device
111
115: first conductive semiconductor layer 117: active layer
119: second conductive semiconductor layer 121,131,131A, 131C: pad hole
123,133,140: insulating film 125,135,135A, 135C: pad
127,137: electrode layer 141,143: lead frame
Claims (29)
Priority Applications (1)
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KR1020070074882A KR101448996B1 (en) | 2007-07-26 | 2007-07-26 | Semiconductor light emitting device and fabrication method thereof, and LED package |
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KR1020070074882A KR101448996B1 (en) | 2007-07-26 | 2007-07-26 | Semiconductor light emitting device and fabrication method thereof, and LED package |
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KR20090011372A true KR20090011372A (en) | 2009-02-02 |
KR101448996B1 KR101448996B1 (en) | 2014-10-10 |
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Cited By (8)
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KR20110108830A (en) * | 2010-03-30 | 2011-10-06 | 엘지이노텍 주식회사 | Light emitting device and fabrication method thereof |
KR20120006284A (en) * | 2010-07-12 | 2012-01-18 | 삼성엘이디 주식회사 | Light emitting device and manufacturing method of the same |
KR20120045530A (en) * | 2010-10-29 | 2012-05-09 | 엘지이노텍 주식회사 | Light emitting device |
KR101252032B1 (en) * | 2010-07-08 | 2013-04-10 | 삼성전자주식회사 | Semiconductor light emitting device and method of manufacturing the same |
KR20140145511A (en) * | 2013-06-13 | 2014-12-23 | 엘지이노텍 주식회사 | Light emitting device and light emitting device package |
KR20160045397A (en) * | 2014-10-17 | 2016-04-27 | 엘지이노텍 주식회사 | Light emitting device package |
KR20160124456A (en) * | 2015-04-20 | 2016-10-28 | 엘지이노텍 주식회사 | Light Emitting Device |
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JP2004311677A (en) * | 2003-04-07 | 2004-11-04 | Matsushita Electric Works Ltd | Semiconductor light emitting device |
JP4116587B2 (en) * | 2004-04-13 | 2008-07-09 | 浜松ホトニクス株式会社 | Semiconductor light emitting device and manufacturing method thereof |
JP2005322722A (en) | 2004-05-07 | 2005-11-17 | Korai Kagi Kofun Yugenkoshi | Light emitting diode |
KR20090010623A (en) * | 2007-07-24 | 2009-01-30 | 삼성전기주식회사 | Light emitting diode device |
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KR20110108830A (en) * | 2010-03-30 | 2011-10-06 | 엘지이노텍 주식회사 | Light emitting device and fabrication method thereof |
KR101252032B1 (en) * | 2010-07-08 | 2013-04-10 | 삼성전자주식회사 | Semiconductor light emitting device and method of manufacturing the same |
KR20120006284A (en) * | 2010-07-12 | 2012-01-18 | 삼성엘이디 주식회사 | Light emitting device and manufacturing method of the same |
KR20120045530A (en) * | 2010-10-29 | 2012-05-09 | 엘지이노텍 주식회사 | Light emitting device |
KR20140145511A (en) * | 2013-06-13 | 2014-12-23 | 엘지이노텍 주식회사 | Light emitting device and light emitting device package |
KR20160045397A (en) * | 2014-10-17 | 2016-04-27 | 엘지이노텍 주식회사 | Light emitting device package |
KR20160124456A (en) * | 2015-04-20 | 2016-10-28 | 엘지이노텍 주식회사 | Light Emitting Device |
WO2017068029A1 (en) * | 2015-10-22 | 2017-04-27 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Microelectronic diode with optimised active surface |
FR3042913A1 (en) * | 2015-10-22 | 2017-04-28 | Commissariat Energie Atomique | MICROELECTRONIC DIODE WITH OPTIMIZED ACTIVE SURFACE |
CN108140701A (en) * | 2015-10-22 | 2018-06-08 | 原子能和替代能源委员会 | Microelectronics diode with optimization active surface |
US11075192B2 (en) | 2015-10-22 | 2021-07-27 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Microelectronic diode with optimised active surface |
CN108140701B (en) * | 2015-10-22 | 2021-07-27 | 原子能和替代能源委员会 | Microelectronic diode with optimized active surface |
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