KR20090011372A - Semiconductor light emitting device and fabrication method thereof, and led package - Google Patents

Semiconductor light emitting device and fabrication method thereof, and led package Download PDF

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KR20090011372A
KR20090011372A KR1020070074882A KR20070074882A KR20090011372A KR 20090011372 A KR20090011372 A KR 20090011372A KR 1020070074882 A KR1020070074882 A KR 1020070074882A KR 20070074882 A KR20070074882 A KR 20070074882A KR 20090011372 A KR20090011372 A KR 20090011372A
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pad
semiconductor layer
conductive semiconductor
layer
substrate
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KR1020070074882A
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KR101448996B1 (en
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김희진
손효근
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엘지이노텍 주식회사
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Abstract

A semiconductor light emitting device and a method of manufacturing the same are provided to have the radiation via for the light emitting diode itself by using one or more pad and to improve the luminous efficiency. The semiconductor light emitting device(100) is comprised of the first conductivity semiconductor layer and the active layer(117) formed on the first conductivity semiconductor layer(115), and the second conductivity semiconductor layer(119) formed on the active layer and the first pad(125). The first pad is penetrated to the prescribed part of the second conductivity semiconductor layer and is connected to the second conductivity semiconductor layer. The first pad and the second pad are penetrated into each layer. The substrate(111) is formed beneath the first conductivity semiconductor layer. The first and the second pad are formed through the substrate.

Description

Semiconductor light emitting device and method for manufacturing same, semiconductor light emitting device package {Semiconductor light emitting device and fabrication method

An embodiment of the present invention relates to a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package.

The semiconductor light emitting device has a light emitting area covering ultraviolet, blue and green areas. In particular, GaN-based nitride semiconductor light emitting devices are applied to optical devices of blue / green LEDs, high-speed switching devices such as metal semiconductor field effect transistors (MESFETs), heterojunction field-effect transistors (HEMTs), and high power devices. It is becoming.

1 is a view showing a conventional semiconductor light emitting device.

Referring to FIG. 1, the semiconductor light emitting device 10 forms an n-type semiconductor layer 13, an active layer 15, and a p-type semiconductor layer 17 on a sapphire substrate 11. The p-type electrode 21 is formed on the n-type electrode 19 and the p-type semiconductor layer 17 on the n-type semiconductor layer 13 through a partial etching process.

The semiconductor light emitting device 10 has a forward bias between the p-type semiconductor layer 17 and the n-type semiconductor layer 13 when a voltage is applied to the p-type electrode 21 and the n-type electrode 19. Will take. At this time, electrons and holes are recombined in the active layer 15 to emit light.

An embodiment of the present invention provides a semiconductor light emitting device having at least one pad penetrating perpendicular to the light emitting device and a method of manufacturing the same.

An embodiment of the present invention provides a semiconductor light emitting device and a light emitting device package using the same that do not require a wire connection.

A semiconductor light emitting device according to an embodiment of the present invention includes a first conductive semiconductor layer; An active layer formed on the first conductive semiconductor layer; A second conductive semiconductor layer formed on the active layer; And a first pad penetrating from a lower end of the first conductive semiconductor layer to a predetermined portion of the second conductive semiconductor layer, insulated from other layers, and connected to the second conductive semiconductor layer.

A semiconductor light emitting device package according to an embodiment of the present invention includes a semiconductor light emitting device in which the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer are sequentially formed; At least one first pad penetrating the semiconductor light emitting device and insulated from another layer, and connected to the second conductive semiconductor layer; At least one second pad penetrated through a lower end of the first conductive semiconductor layer; A first lead frame having a lower end of the first pad mounted thereon; And a second lead frame having a lower end of the second pad mounted thereon.

A method of manufacturing a semiconductor light emitting device according to an embodiment of the present invention includes the steps of sequentially forming a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; Forming a first pad penetrating from the first conductive semiconductor layer to a predetermined portion of the second conductive semiconductor layer, insulated from another layer, and connected to the second conductive semiconductor layer; And forming a second pad penetrating through a portion of the first conductive semiconductor layer.

According to the semiconductor light emitting device, the method for manufacturing the same, and the semiconductor light emitting device package according to the present invention, it is possible to provide a semiconductor light emitting device and a package for which wire connection is unnecessary.

In addition, a heat dissipation path may be provided to the semiconductor light emitting device itself.

In addition, the active layer area can be used as it is, and the luminous efficiency can be improved.

Hereinafter, the present invention will be described with reference to the accompanying drawings.

2 is a side cross-sectional view illustrating a semiconductor light emitting device according to a first embodiment of the present invention, FIG. 3 is a plan view of FIG. 2, and FIG. 4 is a rear view of FIG. 2.

2, the semiconductor light emitting device 100 may include a substrate 111, a buffer layer 113, a first conductive semiconductor layer 115, an active layer 117, a second conductive semiconductor layer 119, and a first pad ( 125, a second pad 135.

The substrate 111 may be selected from the group consisting of sapphire substrate (Al 2 O 3 ), GaN, SiC, ZnO, Si, GaP and GaAs, and may be removed after growth of the semiconductor layer.

A buffer layer 113 is formed on the substrate 111. The buffer layer 113 may be selected from a group of semiconductor layers including GaN, InN, InGaN, AlGaN, or InAlGaN. In addition, an undoped semiconductor layer may be formed on the buffer layer 113 without dopants. At least one of the buffer layer 113 and the undoped semiconductor layer may be formed, or all layers may be removed.

The first conductive semiconductor layer 115 is formed on the buffer layer 113. The first conductive semiconductor layer 115 may be implemented with at least one or more n-type semiconductor layers, the n-type semiconductor layer may be selected from GaN, InN, AlN, AlGaN, InGaN, InAlGaN, Si, N-type dopants such as Ge, Sn, Se, Te, and the like are selectively doped.

An active layer 117 is formed on the first conductive semiconductor layer 115. The active layer 117 is formed of a single quantum well structure or a multiple quantum well structure.

The second conductive semiconductor layer 119 is formed on the active layer 117. The second conductive semiconductor layer 119 may be implemented with at least one p-type semiconductor layer, and the p-type semiconductor layer may be selected from GaN, InN, AlN, AlGaN, InGaN, InAlGaN, and the like. Dopants (eg Mg, Ze) are doped.

At least one of the third conductive semiconductor layer and the transparent electrode layer may be formed on the second conductive semiconductor layer 119. The semiconductor light emitting device 100 may be implemented as a pn junction structure or an np junction structure, or may be used as a structure such as npn or pnp in which a third conductive semiconductor layer (not shown) is formed on the second conductive semiconductor layer 119. have.

The semiconductor light emitting device 100 may include a first pad 125 and a second pad 135. The first pad 125 is formed in the first pad hole 121, and the first pad hole 121 is formed from the bottom of the substrate 111 to the top of the second conductive semiconductor layer 119. A first insulating layer 123 is formed in the first pad hole 121, and the first insulating layer 123 extends from the bottom of the substrate 111 to a portion of the second conductive semiconductor layer 119. Is formed around the perimeter. Accordingly, the first pad 125 is insulated from other materials from the bottom of the substrate to a part of the second conductive semiconductor layer 119 and is connected to the second conductive semiconductor layer 119. The first insulating layer 123 may be selected from insulating materials such as SiO 2 , Si 3 N 4 , Al 2 O 3 , TiO 2, and the like.

The second pad 135 is formed in the second pad hole 131, and the second pad hole 135 is formed from a lower end of the substrate 111 to a part of the first conductive semiconductor layer 119. Here, the first pad hole 121 and the second pad hole 131 may be formed vertically or inclined.

In the manufacturing process of the first pad hole 121, first, after forming the first pad hole 121 in the substrate itself, the semiconductor layers 113 to 119 are grown on the substrate. In this case, since the semiconductor layers 113 to 119 are not grown in the first pad hole 121, the first pad hole 121 may be maintained in the device. Second, after all the semiconductor layers are grown on the substrate, the first pad hole 121 may be formed by using a micro drill or a laser. The first pad hole 121 may be formed to a diameter of several tens to ten um (for example, 5 to 90 um).

In the manufacturing process of the second pad hole 131, the second pad hole 131 may be formed using a micro drill or a laser after growing all the semiconductor layers on the substrate. The second pad hole 131 may be formed to a diameter of several tens to several um (for example, 5 ~ 90um).

Here, the first pad 125 and the second pad 135 may use a conductive metal, for example, any one of Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, and Au. Two or more may be formed of a mixed material. In addition, the constituent elements of the conductive metal of the first and second pads 125 and 135 may not be the same. In addition, one or more pads 125 or 135 may be formed in the semiconductor light emitting device.

First and second electrode layers 127 and 137 may be formed at a lower end of the semiconductor light emitting device 100. The first electrode layer 127 is formed on the lower side of the first pad 125 and the lower side of the substrate 111, and the second electrode layer 137 is formed on the lower end of the second pad 135 and the lower substrate 111. It is formed on the other side. The first and second electrode layers 127 and 137 may be embodied as layers that are plated with one or more layers using metal materials such as Au, Cu, Ni, Al, and Ag.

The first and second electrode layers 127 and 137 are electrically opened by the second insulating layer 140 formed between the first and second electrode layers 127 and 137. The second insulating layer 140 may be formed to have a thickness greater than or equal to the thickness of the first and second electrode layers 127 and 137.

3 is a plan view of FIG. 2, in which only the first pad 125 is exposed on the second conductive semiconductor layer 119. FIG. 4 is a rear view of FIG. 2, and is formed between the first and second electrode layers 127 and 137. The second insulating film 140 is formed.

The first pad 125 at the bottom of the semiconductor light emitting device 100 may be mounted on a first lead frame (not shown) through the first electrode layer 127, and the second pad 135 may be a second electrode layer ( 137 may be mounted on the second lead frame (not shown). The semiconductor light emitting device 100 may secure its own heat dissipation path by the first pad 125 and the second pad 135, and may use the area of the active layer 117 as it is, thereby improving luminous efficiency.

In addition, only the first pad 125 may be formed in the semiconductor light emitting device 100, and the second pad 135 may not be formed in the case of a conductive substrate.

In the embodiment of the present invention, both the first pad 125 and the second pad 135 are provided to penetrate the semiconductor layer, but only one of the two pads 125 and 135 may be penetrated and the other one may be connected by a wire. .

In addition, the embodiment of the present invention can form a lower portion of the first pad hole 121 or / and the second pad hole 131 wider than the upper portion (for example, a horn shape), which is an electrical contact characteristics of the bottom of the pad You can do it nicely.

FIG. 5 is an example package package of the semiconductor light emitting device of FIG. 2.

Referring to FIG. 5, the lower end of the first pad 125 is directly mounted to the first lead frame 141 without the first electrode layer, and the lower end of the second pad 135 is the second lead frame 143 without the second electrode layer. Can be mounted directly).

6 is a semiconductor light emitting device according to a second embodiment of the present invention. This second embodiment will be denoted by the same reference numerals for the same parts as the first embodiment, and description thereof will be omitted.

Referring to FIG. 6, in the semiconductor light emitting device 100A, the diameter d2 of the second pad hole 131A of the substrate 111 is smaller than the diameter d1 of the first pad hole 121. Here, the first pad hole 121 may be formed by first forming a hole in the substrate itself and then growing a semiconductor layer, or by drilling a hole after all the semiconductor layers are grown.

The second pad hole 131A is formed by first forming a hole in the substrate itself, and then growing a semiconductor layer. At this time, a hole having a nano size diameter is formed in the substrate itself. The second pad hole 131A has a buffer layer 113 formed on the substrate, and when the semiconductor layer is grown on the second pad hole 131A when the buffer layer 113 is formed up to a part of the first conductive semiconductor layer. The first pad hole 131A is no longer held and is filled. Here, the second pad hole 131A may be formed to have a nano size diameter (for example, 5 to 90 nm), and the method of filling the second pad hole 131A may be controlled by increasing the growth temperature or growing pressure. In addition, since the hole size is small, it is possible to find and use the filling point in the process of growing the semiconductor layer.

The first pad 125 and the second pad 135A may be formed in the second pad hole 131A in the first pad hole 121.

7 is a semiconductor light emitting device according to a third embodiment of the present invention. This third embodiment will be denoted by the same reference numerals for the same parts as the first embodiment, and description thereof will be omitted.

Referring to FIG. 7, the substrate (111 of FIG. 2) is removed from the semiconductor light emitting device 100B. Such a semiconductor light emitting device 100B is sequentially formed from the buffer layer 113 to the second conductive semiconductor layer 119 on the substrate 111 of FIG. 2, and the first and second pad holes 121 and 131 are formed therein. Done. The substrate (111 of FIG. 2) under the buffer layer 113 may be removed by a laser lift off (LLO) method. The semiconductor light emitting device 100B can reduce the thickness.

8 to 17 illustrate a semiconductor light emitting device and a package structure thereof according to a fourth embodiment of the present invention. This fourth embodiment will be denoted by the same reference numerals for the same parts as the first embodiment, and description thereof will be omitted.

Referring to FIG. 8, the semiconductor light emitting device 100C may include a substrate 111, a buffer layer 113, a first conductive semiconductor layer 115, an active layer 117, a second conductive semiconductor layer 119, and a first pad ( 125, the second pad 135C.

The first pad hole 121 and the second pad hole 131C are formed in the substrate 111. The second pad hole 131C is formed from the lower end of the substrate 111 to the upper end of the second conductive semiconductor layer 119.

The second pad 135C and the third insulating film 133 are formed in the second pad hole 131C. The second pad 135C is formed in the first pad hole 131C from a lower portion of the substrate to a portion of the first conductive semiconductor layer 115, and the third insulating layer 133 is a portion of the second conductive semiconductor layer 115. In the second pad hole 131C to the upper end of the second conductive semiconductor layer 119. The second pad hole 131C may be formed by using a hole formed in the substrate itself or by drilling a hole after growth of the semiconductor layer.

9 illustrates pad holes 121 and 131C of the second conductive semiconductor layer 119 of FIG. 8, wherein the pad holes may be formed in a predetermined shape, for example, in the form of a hexagonal column.

FIG. 10 is a plan view of FIG. 8, in which a first pad 125 and a third insulating layer 133 are exposed on the second conductive semiconductor layer 119.

11 through 16 are views illustrating a manufacturing process of the semiconductor light emitting device 100C of FIG. 8.

Referring to FIG. 11, the first pad hole 121 and the second pad hole 131C are formed in the substrate 111 itself.

The buffer layer 113, the first conductive semiconductor layer 115, the active layer 117, and the second conductive semiconductor layer 119 are sequentially stacked on the substrate 111. In addition, an undoped semiconductor layer may be formed between the buffer layer 113 and the first conductive semiconductor layer 115, and at least one of the third conductive semiconductor layer and the transparent electrode layer may be formed on the second conductive semiconductor layer 119. have. One of the first conductive semiconductor layer 115 and the second conductive semiconductor layer 119 may be an n-type semiconductor layer, and the other may be implemented as a p-type semiconductor layer.

At this time, the semiconductor layer is not grown in the first pad hole 121 and the second pad hole 131C of the substrate 111 itself. Accordingly, as illustrated in FIG. 12, first and second pad holes 121 and 131C penetrate perpendicularly to the semiconductor light emitting device 100C.

Referring to FIG. 13, a first insulating layer 123 is formed in the first pad hole 121, wherein the first insulating layer 123 extends from the bottom of the substrate 111 to a part of the second conductive semiconductor layer 119. It is formed around the first pad hole 121. In forming the first insulating layer 123, the first insulating layer 123 is grown in the first pad hole 121, and then partially removed from the unnecessary insulating layer.

In addition, a third insulating layer 133 is formed on the second pad hole 131C. The third insulating layer 133 is formed from a portion of the first conductive semiconductor layer 115 to an upper end of the second conductive semiconductor layer 119.

The first insulating layer 123 and the third insulating layer 133 may be selected from insulating materials such as SiO 2 , Si 3 N 4 , Al 2 O 3 , TiO 2, and the like.

As shown in FIG. 14, the first pad 125 is formed by filling a conductive metal in the first pad hole 121 in which the first insulating layer 123 is formed, and the lower portion of the second pad hole 131C. Is filled with a conductive metal to form a second pad 135C. The first pad 125 is formed in the first pad hole 121 from the lower end of the substrate to the upper end of the second conductive semiconductor layer 119 and is electrically connected to the second conductive semiconductor layer 119. The second pad 135C is formed in the second pad hole 131C from a lower portion of the substrate to a portion of the first conductive semiconductor layer 115, and is electrically connected to the first conductive semiconductor layer 115. The conductive metal may be formed of a material in which one or two or more of Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, and Au are mixed.

As shown in FIG. 15, a second insulating layer 140 is formed under the substrate 111.

As shown in FIG. 16, a first electrode layer 127 is formed on a lower end of the first pad 125 and a lower part of the substrate 111, and the lower end of the second pad 135C and the substrate 111. The second electrode layer 137 is formed below. The first and second electrode layers 127 and 137 are electrically opened to each other by the second insulating layer 140.

The semiconductor light emitting device 100 may form at least one pad that vertically penetrates, and then the lower portion of the semiconductor light emitting device 100 may be directly mounted on the lead frame or mounted on the lead frame through the electrode layer. In addition, only the first pad 125 may be formed on the semiconductor light emitting device 100, and the second pad 135C may not be formed by arranging a conductive substrate.

17 is a side cross-sectional view schematically illustrating a package in which the semiconductor light emitting devices of FIG. 3 are mounted on the lead frames 141 and 143.

Referring to FIG. 17, the first electrode layer 127 connected to the first pad 125 of the semiconductor light emitting device 100C is mounted on the first lead frame 141 and the second connected to the second pad 135C. The electrode layer 137 is mounted on the second lead frame 143.

In this case, when the forward bias voltage is applied through the first lead frame 141 and the second lead frame 143, the second conductive semiconductor layer 119 is positively applied through the first electrode layer 127 and the first pad 125. A voltage of polarity is applied and a voltage of negative polarity is applied to the first conductive semiconductor layer 115 through the second electrode layer 137 and the second pad 135C, thereby recombining electrons and holes in the active layer 117. (recombination) to emit light.

In this case, the semiconductor light emitting device 100C may radiate heat generated therein to the bottom. For example, a first heat dissipation path through the first pad 125, the first electrode layer 127, and the first lead frame 141, the second pad 135C, the second electrode layer 137, and the second lead. A second heat dissipation path through the frame 143 may be provided.

In the description of an embodiment according to the present invention, each layer (film), region, pattern or structure is "on" or "under" the substrate, each layer (film), region, pad or patterns. In the case where it is described as being formed in, "on" and "under" include both the meanings of "directly" and "indirectly". In addition, the criteria for the top or bottom of each layer will be described with reference to the drawings.

Although the present invention has been described above with reference to the embodiments, these are only examples and are not intended to limit the present invention, and those skilled in the art to which the present invention pertains may have an abnormality within the scope not departing from the essential characteristics of the present invention. It will be appreciated that various modifications and applications are not illustrated.

For example, each component shown in detail in the embodiment of the present invention may be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

1 is a side cross-sectional view of a conventional semiconductor light emitting device.

2 is a side cross-sectional view showing a semiconductor light emitting device according to the first embodiment of the present invention.

3 is a plan view of FIG.

4 is a rear view of FIG. 2.

FIG. 5 is a side sectional view showing another example of mounting of the semiconductor light emitting device of FIG. 2; FIG.

6 is a side sectional view showing a semiconductor light emitting device according to a second embodiment of the present invention;

7 is a side cross-sectional view showing a semiconductor light emitting device according to a third embodiment of the present invention.

8 is a side sectional view showing a semiconductor light emitting device according to a fourth embodiment of the present invention.

FIG. 9 illustrates pad holes in the second conductive semiconductor layer of FIG. 8; FIG.

10 is a plan view of FIG. 8.

11 to 16 illustrate a process of manufacturing the semiconductor light emitting device of FIG. 8.

17 is a view showing a package of the semiconductor light emitting device of FIG.

<Explanation of symbols for main parts of drawing>

100,100A, 110B, 100C: semiconductor light emitting device

111 substrate 113 buffer layer

115: first conductive semiconductor layer 117: active layer

119: second conductive semiconductor layer 121,131,131A, 131C: pad hole

123,133,140: insulating film 125,135,135A, 135C: pad

127,137: electrode layer 141,143: lead frame

Claims (29)

A first conductive semiconductor layer; An active layer formed on the first conductive semiconductor layer; A second conductive semiconductor layer formed on the active layer; And a first pad penetrating from a lower end of the first conductive semiconductor layer to a predetermined portion of the second conductive semiconductor layer, insulated from other layers, and connected to the second conductive semiconductor layer. The method of claim 1, And a second pad formed through the bottom of the first conductive semiconductor layer to a part of the first conductive semiconductor layer. The method according to claim 1 or 2, The first pad and the second pad are penetrated perpendicular to each layer. The method of claim 2, And a substrate formed under the first conductive semiconductor layer, the substrate penetrating the first and second pads therethrough. The method of claim 4, wherein The substrate is a semiconductor light emitting device selected from the group consisting of sapphire substrate (Al 2 O 3 ), GaN, SiC, ZnO, Si, GaP and GaAs. The method of claim 4, wherein A semiconductor light emitting device is formed between the substrate and the first conductive semiconductor layer, and includes at least one of a buffer layer and an undoped semiconductor layer through which the first and second pads pass. The method of claim 1, And the first pad includes a first insulating layer electrically insulating the circumference of the first pad from another layer from a lower portion of the first conductive semiconductor layer to a portion of the second conductive semiconductor layer. The method of claim 2, And a third insulating layer formed on the second pad from a portion of the first conductive semiconductor layer to an upper end of the second conductive semiconductor layer. The method of claim 2, And a first electrode layer and a second electrode layer connected to lower ends of the first pad and the second pad, respectively. The method of claim 9, And a second insulating layer formed between the first electrode layer and the second electrode layer. The method according to any one of claims 8, 9 and 10, The insulating film is a semiconductor light emitting device is selectively formed from SiO 2 , Si 3 N 4 , Al 2 O 3 , TiO 2 material. The method of claim 2, The second pad is a semiconductor light emitting device having a diameter smaller than the diameter of the first pad. The method of claim 1, The first conductive semiconductor layer includes at least one n-type semiconductor layer, The second conductive semiconductor layer includes at least one p-type semiconductor layer. The method of claim 1, And at least one of a third conductive semiconductor layer and a transparent electrode layer on the second conductive semiconductor layer. A semiconductor light emitting device in which a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer are sequentially formed; At least one first pad penetrating the semiconductor light emitting device and insulated from another layer, and connected to the second conductive semiconductor layer; At least one second pad penetratingly connected to a portion of the first conductive semiconductor layer; A first lead frame having a lower end of the first pad mounted thereon; A semiconductor light emitting device package comprising a second lead frame on which the bottom of the second pad is mounted. The method of claim 15, A semiconductor light emitting device package formed under the first conductive semiconductor layer and including a substrate through which the first and second pads pass. The method of claim 16, And a first insulating layer formed to insulate the first pad from the first conductive semiconductor layer to a portion of the second conductive semiconductor layer. The method of claim 16, And a third insulating layer formed on a second pad between the upper ends of the second conductive semiconductor layers in a portion of the first conductive semiconductor layer. The method of claim 16, A first electrode layer formed on one side under the first pad; A second electrode layer formed on the other side under the second pad; A semiconductor light emitting device package comprising a second insulating film to insulate the first electrode layer and the second electrode layer from each other. Sequentially forming the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer; Forming a first pad penetrating from the first conductive semiconductor layer to a predetermined portion of the second conductive semiconductor layer, insulated from another layer, and connected to the second conductive semiconductor layer; And forming a second pad penetrating through a portion of the first conductive semiconductor layer. The method of claim 20, A substrate is disposed below the first conductive semiconductor layer, The first and second pad holes for penetrating the first pad and the second pad is formed on one side and the other side of the substrate. The method of claim 21, Forming the first pad, Forming a first pad hole vertically penetrating from a lower end side of the substrate to an upper end of a second conductive semiconductor layer; Forming a first insulating film around the first pad hole from a lower portion of the substrate to a portion of the second conductive semiconductor layer; And filling a conductive metal in the first pad hole to form a first pad. The method of claim 21, Forming the second pad, Forming a second pad hole vertically penetrating through the other lower end of the substrate to a portion of the first conductive semiconductor layer; And filling a conductive metal in the second pad hole to form a second pad. The method of claim 21, The second pad forming step is Forming a second pad hole vertically penetrating through the other lower end of the substrate to a second conductive semiconductor layer; Forming a third insulating film from a portion of the first conductive semiconductor layer to an upper end of the second conductive semiconductor layer; And forming a second pad by filling a conductive metal from a lower portion of the substrate to a portion of the first conductive semiconductor layer. The method of claim 21, Forming a second insulating layer on a lower central portion of the substrate; Forming a first electrode layer connected to a lower end of the first pad at one lower side of the substrate; And forming a second electrode layer connected to a lower end of the second pad on the other side of the lower side of the substrate. The method of claim 21, The first pad hole is formed with a diameter of 5 ~ 90um size, The second pad hole is a semiconductor light emitting device manufacturing method is formed with a diameter of 5 ~ 90nm size. The method of claim 21, A lower end diameter of the first pad hole and the second pad hole is larger than the upper diameter of the semiconductor light emitting device manufacturing method. The method of claim 21, At least one of the first pad hole and the second pad hole is formed before the semiconductor layer is grown on the substrate or after the semiconductor layer is grown on the substrate. The method of claim 20, The method of manufacturing a semiconductor light emitting device comprising at least one of a transparent electrode layer and a third conductive semiconductor layer on the second conductive semiconductor layer.
KR1020070074882A 2007-07-26 2007-07-26 Semiconductor light emitting device and fabrication method thereof, and LED package KR101448996B1 (en)

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KR20120006284A (en) * 2010-07-12 2012-01-18 삼성엘이디 주식회사 Light emitting device and manufacturing method of the same
KR20120045530A (en) * 2010-10-29 2012-05-09 엘지이노텍 주식회사 Light emitting device
KR20140145511A (en) * 2013-06-13 2014-12-23 엘지이노텍 주식회사 Light emitting device and light emitting device package
KR20160045397A (en) * 2014-10-17 2016-04-27 엘지이노텍 주식회사 Light emitting device package
KR20160124456A (en) * 2015-04-20 2016-10-28 엘지이노텍 주식회사 Light Emitting Device
WO2017068029A1 (en) * 2015-10-22 2017-04-27 Commissariat A L'energie Atomique Et Aux Energies Alternatives Microelectronic diode with optimised active surface
FR3042913A1 (en) * 2015-10-22 2017-04-28 Commissariat Energie Atomique MICROELECTRONIC DIODE WITH OPTIMIZED ACTIVE SURFACE
CN108140701A (en) * 2015-10-22 2018-06-08 原子能和替代能源委员会 Microelectronics diode with optimization active surface
US11075192B2 (en) 2015-10-22 2021-07-27 Commissariat A L'energie Atomique Et Aux Energies Alternatives Microelectronic diode with optimised active surface
CN108140701B (en) * 2015-10-22 2021-07-27 原子能和替代能源委员会 Microelectronic diode with optimized active surface

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