KR102356226B1 - Semiconductor device and Semiconductor device package - Google Patents

Abstract

The semiconductor device includes a first wavelength conversion layer on a substrate, a first semiconductor layer on the first wavelength conversion layer, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, a first semiconductor layer and electrical It includes a first electrode connected to the , and a second electrode electrically connected to the second semiconductor layer.
The active layer may emit light in the first wavelength region. The first wavelength conversion layer may be formed of two different semiconductor layers. The first wavelength conversion layer may emit light of the second wavelength region by the light of the first wavelength region generated in the active layer. The first wavelength region and the second wavelength region may be different from each other.

Description

Semiconductor device and semiconductor device package

The embodiment relates to a semiconductor device and a semiconductor device package.

A semiconductor device including a compound semiconductor material such as GaN or AlGaN has many advantages, such as having a wide and easily adjustable band gap energy, and thus can be used in various ways as a light emitting device, a light receiving device, and various diodes.

In particular, light emitting devices such as light emitting diodes or laser diodes using group 3-5 or group 2-6 compound semiconductor materials of semiconductors have developed red, green, and Various colors such as blue and ultraviolet light may be implemented. In the light emitting device, efficient white light can be realized by using a fluorescent material or combining colors. These light emitting devices have advantages of low power consumption, semi-permanent lifespan, fast response speed, safety, and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps.

A semiconductor device package for obtaining white light using such a light emitting device is being actively developed.

In a conventional semiconductor device package, a molding member including a red phosphor is disposed on the red light emitting device and the green light emitting device to obtain white light.

However, in the conventional semiconductor device package, the area occupied by the red light emitting device and the green light emitting device is increased to increase the size of the semiconductor device package, and since at least two light emitting devices must be used, the manufacturing cost is increased, and they are arranged horizontally with each other. There is a problem of color mixing between the red light emitting device and the green light emitting device.

In addition, in the conventional semiconductor device package, since the red light emitting device and the green light emitting device are individually driven, there is a problem in that driving control is complicated and power consumption is increased.

The embodiment provides a semiconductor device and a semiconductor device package capable of minimizing a size by emitting at least two color lights.

The embodiment provides a semiconductor device and a semiconductor device package capable of reducing manufacturing cost by emitting at least two color lights.

The embodiment provides a semiconductor device and a semiconductor device package in which at least two color lights are emitted in a vertical direction to minimize color mixing.

The embodiment provides a semiconductor device and a semiconductor device package capable of reducing power consumption by emitting at least two color lights.

A semiconductor device according to an embodiment includes a substrate; a first wavelength conversion layer on the substrate; a first semiconductor layer on the first wavelength conversion layer; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the second semiconductor layer.

The active layer may emit light in a first wavelength region.

The first wavelength conversion layer may be formed of two different semiconductor layers.

The first wavelength conversion layer may emit light of a second wavelength region by the light of the first wavelength region generated by the active layer.

The first wavelength region and the second wavelength region may be different from each other.

A semiconductor device package according to an embodiment, a body having a cavity; first and second leadframes within the body; and the semiconductor device.

According to an embodiment, in a single semiconductor device, for example, light of a first wavelength region may be generated as electroluminescence by a light emitting structure including an active layer, and light of a second wavelength region may be generated as photoluminescence by a wavelength conversion layer. , it is not necessary to separately manufacture the semiconductor device that generates the light of the first wavelength region and the light of the second wavelength region, respectively, so that the manufacturing cost can be reduced.

According to the embodiment, in a single semiconductor device, for example, light of a first wavelength region may be generated as electroluminescence by a light emitting structure, and light of a second wavelength region may be generated as photoluminescence by a wavelength conversion layer, so it is located on the upper part The light of the first wavelength region generated by the light emitting structure is emitted in all directions, and some of the light proceeds in the downward direction and is generated as light of the second wavelength region by the wavelength conversion layer located under the active layer of the light emitting structure Therefore, the possibility of occurrence of a color mixture of the light of the first wavelength region and the light of the second wavelength region may be remarkably reduced.

According to an embodiment, a voltage is applied only to the light emitting structure that generates light in the first wavelength region and no voltage needs to be applied to the wavelength conversion layer that generates light in the second wavelength region, so power consumption can be reduced.

According to an embodiment, when the semiconductor device manufactured as described above is mounted on the semiconductor device package, the size of the semiconductor device package may be reduced.

According to the embodiment, since the wavelength conversion layer may be grown together when the light emitting structure is grown, there is no need to separately form a phosphor, and thus the process may be simple and the structure may be simple.

According to the embodiment, the wavelength conversion layer is formed of a heat-resistant compound semiconductor material, so that it is possible to solve the problem of lowering the color rendering index (CRI) due to deformation due to heat when the conventional green phosphor is formed.

According to an embodiment, by increasing the doping concentration of the wavelength conversion layer to increase the intensity of light in the first wavelength region generated in the wavelength conversion layer, color gamut may be improved.

According to the embodiment, by disposing the fourth semiconductor layer between the first semiconductor layer and the wavelength conversion layer, it is possible to prevent loss of current generated by flowing down the wavelength conversion layer.

According to an embodiment, by disposing an active layer for generating light in the first wavelength region and first and second wavelength conversion layers for generating light in the second and third wavelength regions, respectively, for example, blue light, green light, and red light. Since all light is emitted to realize white light, there is no need for a process including an additional material or an additional layer for generating another color light when manufacturing a semiconductor device package, thereby reducing manufacturing cost and It is possible to simplify the structure, reduce power consumption, and reduce the number of electrical connection lines such as driving circuits and wires.

1 is a diagram illustrating a semiconductor device according to a first embodiment.
2 is a diagram illustrating an energy band diagram.
3 shows the intensity of light in the second wavelength region according to the doping concentration of the well layer of the wavelength conversion layer.
4 shows a horizontal type semiconductor device according to an embodiment.
5 shows a flip-type semiconductor device according to an embodiment.
6 is a diagram illustrating a semiconductor device according to a second embodiment.
7 is a diagram illustrating a semiconductor device according to a third embodiment.
8 shows a horizontal type semiconductor device according to an embodiment.
9 is a diagram illustrating a semiconductor device according to a fourth embodiment.
10 is a diagram illustrating a semiconductor device according to a fifth embodiment.
11 is a diagram illustrating a semiconductor device package according to an embodiment.

Hereinafter, embodiments for solving the above problems will be described with reference to the accompanying drawings.

In the description of the embodiment, in the case where each element is described as being formed on "on or under", under) includes both elements in which two elements are in direct contact with each other or in which one or more other elements are disposed between the two elements indirectly. In addition, when expressed as "up (up) or down (on or under)", the meaning of the downward direction as well as the upward direction based on one configuration may be included.

The semiconductor device may include various electronic devices such as a light emitting device and a light receiving device, and both the light emitting device and the light receiving device may include a light emitting structure including at least a first semiconductor layer, an active layer, and a second semiconductor layer. The semiconductor device according to the embodiment may be a light emitting device. The light emitting device emits light by recombination of a first carrier, that is, an electron and a second carrier, that is, a hole, and the wavelength of this light is determined by the material's inherent bandgap energy. Accordingly, the emitted light may vary depending on the composition of the material.

Instead of the light emitting device, it may be referred to as a semiconductor light emitting device.

Hereinafter, semiconductor devices of various embodiments will be described.

(Example 1)

1 is a diagram illustrating a semiconductor device according to a first embodiment.

Referring to FIG. 1 , the semiconductor device 10 according to the first embodiment may include a substrate 11 , a light emitting structure 13 , and a wavelength conversion layer 21 .

The light emitting structure 13 generates light of a first wavelength region by an electrically applied signal (voltage), that is, electroluminescence, and the wavelength conversion layer 21 emits light in the second wavelength region by the light of the first wavelength region. Can generate light.

The light of the first wavelength region may be, for example, blue light in a range of about 400 nm to about 470 nm, but is not limited thereto. The light of the second wavelength region may be, for example, green light in a range of about 500 nm to about 560 nm, but is not limited thereto.

The light emitting structure 13 generates light of a first wavelength region only when a current flows by applying a voltage, and the wavelength conversion layer 21 needs to absorb light of the first wavelength region to generate light of a second wavelength region. . That is, the light of the first wavelength region may be generated using a voltage as a driving source, and the light of the second wavelength region may be generated using the light of the first wavelength region as a driving source.

Accordingly, a voltage may be applied to the light emitting structure 13 to generate light in the first wavelength region. A current flows in the light emitting structure by the voltage applied to the light emitting structure 13, and light of the first wavelength region may be generated according to the current. When a portion of the generated light of the first wavelength region is absorbed by the wavelength conversion layer 21 , light of the second wavelength region may be generated by the light of the first wavelength region.

The light emitting structure 13 may be disposed on the substrate 11 . The wavelength conversion layer 21 may be disposed between the substrate 11 and the light emitting structure. The light emitting structure 13 and the wavelength conversion layer 21 may include a Group 3-5 or Group 2-6 compound semiconductor material.

The light emitting structure 13 may include a first semiconductor layer 15 , an active layer 17 , and a second semiconductor layer 19 .

The first semiconductor layer 15 may be disposed on the substrate 11 .

The substrate 11 may serve to support the light emitting structure 13 while growing the light emitting structure 13 . Accordingly, the substrate 11 may be formed of a material suitable for growth of a Group 3-5 or Group 2-6 compound semiconductor material, and may be formed of a material having a lattice constant and thermal stability similar to that of the light emitting structure 13 . For example, the substrate 11 is a conductive substrate or an insulating substrate, and may be formed of at least one selected from the group consisting of sapphire (Al2O3), SiC, Si, GaAs, GaN, ZnO, GaP, InP, and Ge.

The first semiconductor layer 15 may be formed of a compound semiconductor material of AlxInyGa(1-x-y)N (0≤x≤1, 0≤y≤1), but is not limited thereto. For example, the first semiconductor layer 15 may include at least one selected from the group consisting of InAlGaN, GaN, AlGaN, InGaN, AlN, InN, AlInN, GaAs, AlGaAs, GaAsP GaP, InP, GaInP, and AlGaInP. is not limited to

The first semiconductor layer 15 may have a thickness of about 1 μm to about 10 μm.

The first semiconductor layer 15 may include an n-type dopant such as Si, Ge, or Sn. The doping concentration of the first semiconductor layer 15 may be about 1×1017 cm −3 to about 2×1019 cm −3 . The first semiconductor layer 15 may provide electrons to the active layer 17 .

The active layer 17 may be disposed on the first semiconductor layer 15 .

The active layer 17 may generate light in the first wavelength region. The light in the first wavelength region is not generated by itself, but may be generated when a voltage is applied between the first semiconductor layer 15 and the second semiconductor layer 19 .

That is, in the active layer 17 , electrons injected through the first semiconductor layer 15 and holes injected through the second semiconductor layer 19 recombine with each other, so that the compound semiconductor material of the active layer 17 is It is possible to emit light in a wavelength region corresponding to the bandgap energy.

In other words, the active layer 17 may perform electroluminescence (EL) for converting an electrical signal supplied between the first semiconductor layer 15 and the second semiconductor layer 19 into light.

The active layer 17 may include any one of a multiple quantum well structure (MQW), a quantum dot structure, or a quantum wire structure. In the active layer 17 , the well layer and the barrier layer may be repeatedly formed with one cycle of the well layer and the barrier layer.

Since the repetition period of the well layer and the barrier layer can be modified according to the characteristics of the semiconductor device 10 , it is not limited thereto. When a period composed of a well layer and a barrier layer is defined as a pair, the active layer 17 may include, for example, 1 to 20 pairs of a well layer and a barrier layer, but is not limited thereto. .

The active layer 17 may include, for example, a well layer and a barrier layer such as InGaN/InGaN, InGaN/GaN, or InGaN/AlGaN. As shown in FIG. 2 , the bandgap energy of the barrier layer may be greater than the bandgap energy Eg1 of the well layer.

The light of the first wavelength region may be determined by the bandgap energy Eg1 of the well layer of the active layer 17 . Accordingly, the well layer of the active layer 17 may include a compound semiconductor material having a bandgap energy corresponding to light in the first wavelength region.

The well layer may have a thickness of approximately 1 nm to approximately 10 nm, and the barrier layer may have a thickness of approximately 1 nm to approximately 20 nm.

The active layer 17 may not include a dopant.

The active layer 17 may be doped with an n-type dopant such as Si, but is not limited thereto. The doping concentration of the active layer 17 may be 1×1017 cm −3 to 2×1019 cm −3 . Stress of the active layer 17 is relieved by the dopant doped into the active layer 17 , so that the efficiency of light in the first wavelength region generated by the active layer 17 may be improved.

The n-type dopant may be included in the well layer and/or the barrier layer of the active layer 17 .

The second semiconductor layer 19 may be disposed on the active layer 17 .

The second semiconductor layer 19 may be formed of a compound semiconductor material of AlxInyGa(1-xy)N (0≤x≤1, 0≤y≤1, 0≤x+y≤1), but is not limited thereto. does not For example, the second semiconductor layer 19 may include at least one selected from the group consisting of InAlGaN, GaN, AlGaN, InGaN, AlN, InN, AlInN, GaAs, AlGaAs, GaAsP GaP, InP, GaInP and AlGaInP, but this is not limited to

The second semiconductor layer 19 may have a thickness of about 1 μm or less.

The second semiconductor layer 19 may include a p-type dopant such as Mg, Zn, Ca, Sr, or Ba. The doping concentration of the second semiconductor layer 19 may be about 1×1017 cm −3 to about 2×1019 cm −3 .

The second semiconductor layer 19 may provide holes to the active layer 17 .

Although not shown, an electrode for applying a voltage may be disposed in a portion of each of the first semiconductor layer 15 and the second semiconductor layer 19 to supply a voltage.

Meanwhile, the wavelength conversion layer 21 may be disposed under the light emitting structure 13 . Specifically, the wavelength conversion layer 21 may be disposed under the first semiconductor layer 15 of the light emitting structure 13 .

The wavelength conversion layer 21 may generate light in the second wavelength region. The light of the second wavelength region may not be generated by itself, but may be generated using light of the first wavelength region.

That is, a portion of the light of the first wavelength region generated in the active layer 17 may travel downward of the active layer 17 and be absorbed by the wavelength conversion layer 21 . In this case, while electrons of the well layer of the wavelength conversion layer 21 are excited by the absorbed light of the first wavelength region and then stabilized, light of the second wavelength region may be generated. Accordingly, the wavelength conversion layer 21 may perform photoluminescence (PL) that converts an optical signal such as light of the first wavelength region into light.

The wavelength conversion layer 21 may include any one of a multiple quantum well structure (MQW), a quantum dot structure, or a quantum wire structure. In the wavelength conversion layer 21 , the well layer and the barrier layer may be repeatedly formed with one cycle of the well layer and the barrier layer. Since the repetition period of the well layer and the barrier layer can be modified according to the characteristics of the semiconductor device 10 , it is not limited thereto.

When a period composed of a well layer and a barrier layer is defined as a pair, the wavelength conversion layer 21 may include, for example, 1 to 20 pairs of a well layer and a barrier layer, but is limited thereto. I never do that.

The wavelength conversion layer 21 may include, for example, a well layer and a barrier layer such as InGaN/InGaN, InGaN/GaN, or InGaN/AlGaN. As shown in FIG. 2 , the bandgap energy of the barrier layer may be greater than the bandgap energy Eg2 of the well layer.

Light in the second wavelength region may be determined by the bandgap energy Eg2 of the well layer of the wavelength conversion layer 21 . Accordingly, the well layer of the wavelength conversion layer 21 may include a compound semiconductor material having a bandgap energy corresponding to light in the second wavelength region.

The well layer may have a thickness of approximately 1 nm to approximately 10 nm, and the barrier layer may have a thickness of approximately 1 nm to approximately 20 nm.

The wavelength conversion layer 21 may include an n-type dopant such as Si, but is not limited thereto. The doping concentration of the wavelength conversion layer 21 may be 1×1017 cm −3 to 2×1019 cm −3 .

The n-type dopant may be included in the well layer and/or the barrier layer of the wavelength conversion layer 21 .

In order to generate light in the second wavelength region in the wavelength conversion layer 21 , light in the first wavelength region must be absorbed. In order for the light of the first wavelength region to be absorbed by the wavelength conversion layer 21 , the energy hν of the light of the first wavelength region must be at least greater than the bandgap energy Eg2 of the well layer of the wavelength conversion layer 21 . Since the energy hν of light in the first wavelength region corresponds to the bandgap energy Eg1 of the well layer of the active layer 17 , as shown in FIG. 2 , the bandgap energy of the well layer of the wavelength conversion layer 21 . (Eg2) is less than the bandgap energy (Eg1) of the well layer of the active layer 17 .

Since the wavelength region is inversely proportional to the bandgap energy, when blue light is generated from the active layer 17 of the light emitting structure 13 as described above, the bandgap is smaller than the bandgap energy Eg1 of the well layer of the active layer 17 . In the wavelength conversion layer 21 having energy, green light having a larger wavelength range than that of the blue light generated by the active layer 17 may be generated.

Meanwhile, the third semiconductor layer 23 may be disposed between the substrate 11 and the wavelength conversion layer 21 . The third semiconductor layer 23 may serve to facilitate growth of the wavelength conversion layer 21 including a periodic well layer and a barrier layer on the substrate 11 . That is, when the wavelength conversion layer 21 is directly grown on the substrate 11 , a dislocation or v pit occurs in the wavelength conversion layer 21 due to a difference in lattice constant between the substrate 11 and the wavelength conversion layer 21 . Bonds such as pits may occur and the film quality may be deteriorated.

The third semiconductor layer 23 may be formed of a compound semiconductor material of AlxInyGa(1-xy)N (0≤x≤1, 0≤y≤1, 0≤x+y≤1), but is not limited thereto. does not For example, the third semiconductor layer 23 may include at least one selected from the group consisting of InAlGaN, GaN, AlGaN, InGaN, AlN, InN, AlInN, GaAs, AlGaAs, GaAsP GaP, InP, GaInP, and AlGaInP. is not limited to

The third semiconductor layer 23 may have a thickness of about 1 μm to about 10 μm.

The third semiconductor layer 23 may have the same conductivity type as that of the first semiconductor layer 15 . For example, the third semiconductor layer 23 may include an n-type dopant such as Si, Ge, or Sn. The doping concentration of the first semiconductor layer 15 may be about 1×1017 cm −3 to about 2×1019 cm −3 .

When a voltage is applied to the first semiconductor layer 15 and the second semiconductor layer 19 of the light emitting structure 13, current flows not only in the first semiconductor layer 15 but also in the third semiconductor layer 23, Electrons of the third semiconductor layer 23 as well as the first semiconductor layer 15 may be provided as the active layer 17 .

Meanwhile, although not shown, a buffer layer may be disposed between the substrate 11 and the third semiconductor layer 23 . The buffer layer may include a Group 3-5 or Group 2-6 compound semiconductor material.

The buffer layer may serve to alleviate a lattice constant difference between the substrate 11 and the light emitting structure 13 . Since the lattice constant difference between the substrate 11 and the light emitting structure 13 is alleviated by the lattice constant, the light emitting structure 13 can be stably grown without defects.

In the above, it has been described that the light emitting structure 13 includes the first semiconductor layer 15 , the active layer 17 , and the second semiconductor layer 19 , but the third semiconductor layer disposed under the wavelength converter 21 . (23) may also be included in the light emitting structure 13, but is not limited thereto.

Meanwhile, the third semiconductor layer 23 may not include a dopant. In this case, the third semiconductor layer 23 is simply referred to as a third semiconductor layer and may not be included in the light emitting structure 13 .

According to the semiconductor device of the first embodiment, in a single semiconductor device, for example, light of a first wavelength region is generated as electroluminescence by the light emitting structure 13 , and light of a second wavelength region is emitted by the wavelength conversion layer 21 . Since it can be generated by light emission, it is not necessary to separately manufacture semiconductor devices that respectively generate the light of the first wavelength region and the light of the second wavelength region, and thus the manufacturing cost can be reduced.

According to the semiconductor device of the first embodiment, in a single semiconductor device, for example, light of a first wavelength region is generated as electroluminescence by the light emitting structure 13 , and light of a second wavelength region is emitted by the wavelength conversion layer 21 . Since it can be generated by light emission, the light of the first wavelength region generated by the light emitting structure 13 positioned thereon is emitted in all directions, and some of the light proceeds in the lower direction to the active layer 17 of the light emitting structure 13 . ), since the light of the second wavelength region is generated by the wavelength conversion layer 21 positioned below, the possibility of occurrence of a mixture of the light of the first wavelength region and the light of the second wavelength region may be remarkably reduced.

According to the semiconductor device of the first embodiment, a voltage is applied only to the light emitting structure 13 that generates light in the first wavelength region, and a voltage needs to be applied to the wavelength conversion layer 21 that generates light in the second wavelength region. Therefore, power consumption can be reduced.

According to the semiconductor device of the first embodiment, when the manufactured semiconductor device is mounted on a semiconductor device package, the size of the semiconductor device package may be reduced.

According to the semiconductor device of the first embodiment, when the light emitting structure 13 is grown, the wavelength conversion layer 21 can also be grown, so that there is no need to separately form a phosphor, so the process can be simple and the structure can be simple.

According to the semiconductor device of the first embodiment, the wavelength conversion layer 21 is formed of a heat-resistant compound semiconductor material, and the color rendering index (CRI) is lowered due to deformation due to heat when the conventional green phosphor is formed. can solve the

Meanwhile, as shown in FIG. 3 , in the semiconductor device 10 according to the first embodiment, the intensity of light in the second wavelength region is relatively low compared to the intensity of light in the first wavelength region, so that the color gamut may be reduced. .

In order to prevent such a decrease in color gamut, the doping concentration of the wavelength conversion layer 21 may be relatively high.

3 shows the intensity of light in the second wavelength region according to the doping concentration of the wavelength conversion layer.

In FIG. 3, (a) is a case in which a dopant is not included in the wavelength conversion layer 21, (b) is a case in which the doping concentration of the wavelength conversion layer 21 is 1×1018 cm-3, (c) is This is a case in which the doping concentration of the wavelength conversion layer 21 is 5×10 18 cm −3 .

As shown in FIG. 3 , it can be seen that as the doping concentration of the wavelength conversion layer 21 increases, the intensity of light in the second wavelength region generated by the wavelength conversion layer 21 increases.

In order to improve color gamut, the doping concentration of the wavelength conversion layer 21 may be about 1×10 18 cm −3 or more, but is not limited thereto.

Meanwhile, the wavelength conversion layer 21 may be spaced apart from the active layer 17 of the light emitting structure 13 in a range of 1 μm to 10 μm.

When the distance between the wavelength conversion layer 21 and the active layer 17 of the light emitting structure 13 is 1 μm or less, the thickness of the first semiconductor layer 15 is thin, so that current spreading in the first semiconductor layer 15 is not performed well. Therefore, electrons are not uniformly injected into the active layer 17 in the entire region of the first semiconductor layer 15 . Accordingly, uniform light of the first wavelength region is not generated in the entire region of the active layer 17 .

When the distance between the wavelength conversion layer 21 and the active layer 17 of the light emitting structure 13 is 10 μm or more, the wavelength conversion layer 21 is generated in the active layer 17 away from the active layer 17 of the light emitting structure 13 . It is difficult for the light of the first wavelength region to reach the wavelength conversion layer 21 . Accordingly, light in the second wavelength region is not easily generated.

Each component of the semiconductor device 10 described above, that is, the third semiconductor layer 23 , the wavelength conversion layer 21 , the first semiconductor layer 15 , the active layer 17 and the second semiconductor layer 19 . can be sequentially grown using MOCVD equipment. That is, after the substrate 11 is introduced into the chamber of the MOCVD (Metal Organic Chemical Vapor Deposition) equipment, the third semiconductor layer 23 is formed on the substrate 11 using a Group 3-5 or Group 2-6 compound semiconductor material. ), the wavelength conversion layer 21 , the first semiconductor layer 15 , the active layer 17 , and the second semiconductor layer 19 may be sequentially grown. When the first semiconductor layer 15 , the wavelength conversion layer 21 , and the third semiconductor layer 23 are grown, an n-type dopant may be doped. When the second semiconductor layer 19 is grown, a p-type dopant may be doped.

Thereafter, after each component of the semiconductor device 10 is grown, the corresponding substrate 11 may be withdrawn from the chamber of the MOCVD equipment.

Instead of the above-described MOCVD equipment, for example, CVD equipment (Chemical Vapor Deposition), PECVD equipment (Plasma-Enhanced Chemical Vapor Deposition), MBE equipment (Molecular Beam Epitaxy), HVPE equipment (Hydride Vapor Phase Epitaxy) is the semiconductor device 10 ), but is not limited thereto.

The semiconductor device 10 according to the first embodiment may be manufactured as a horizontal type semiconductor device or a flip type semiconductor device.

4 shows a horizontal type semiconductor device according to an embodiment.

The horizontal semiconductor device according to the embodiment may be manufactured by adding a subsequent process to the semiconductor device 10 according to the first embodiment shown in FIG. 1 .

Referring to FIG. 4 , when the semiconductor device 10 according to the first embodiment shown in FIG. 1 is provided, mesa etching may be performed to remove a portion of the light emitting structure 13 . That is, edge regions of each of the second semiconductor layer 19 , the active layer 17 , and the first semiconductor layer 15 may be removed by the mesa etching. The upper part of the first semiconductor layer 15 is removed and the lower part is not removed.

Subsequently, the transparent electrode layer 25 may be formed on the second semiconductor layer 19 . The transparent electrode layer 25 may be formed using sputtering equipment, but is not limited thereto.

The transparent electrode layer 25 may include a transparent conductive material. The transparent electrode layer 25 may be formed of a material having excellent ohmic characteristics with the second semiconductor layer 19 and excellent current spreading characteristics. For example, the transparent electrode layer 25 is ITO, IZO (In-ZnO), GZO (Ga-ZnO), AZO (Al-ZnO), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), IrOx, RuOx , RuOx/ITO, Ni/IrOx/Au, and may include at least one selected from the group consisting of Ni/IrOx/Au/ITO, but is not limited thereto.

After the transparent electrode layer 25 is first formed, mesa etching may be performed.

Subsequently, a first electrode 27 may be formed on the first semiconductor layer 15 etched by mesa etching, and a second electrode 29 may be formed on a partial region of the transparent electrode layer 25 . The first electrode 27 and the second electrode 29 may be formed of a metal material having excellent conductivity. Each of the first electrode 27 and the second electrode 29 may include at least one or more layers.

The upper surface of the first electrode 27 is formed to be positioned lower than the active layer 17 of the light emitting structure 13 , so that light of the first wavelength region generated in the active layer 17 of the light emitting structure 13 is transmitted to the active layer 17 . It may not be reflected by the first electrode 27 when light is emitted from the side of the .

This and the moon, the upper surface of the first electrode 27 is formed to be positioned higher than the active layer 17 of the light emitting structure 13, so that the light of the first wavelength region generated in the active layer 17 of the light emitting structure 13 is When light is emitted from the side surface of the active layer 17 , it may be reflected by the side surface of the first electrode 27 .

Although not shown, an insulating layer may be formed between the transparent electrode layer 25 corresponding to the second electrode 29 and the second semiconductor layer 19 to prevent current concentration, but the present invention is not limited thereto.

In the horizontal semiconductor device according to the manufactured embodiment, when a voltage is applied to the first and second electrodes 27 and 29 , a current is generated between the second semiconductor layer 19 and the first semiconductor layer 15 . flows, holes in the second semiconductor layer 19 and electrons in the first semiconductor layer 15 are injected into the active layer 17, and the injected holes and electrons in the active layer 17 recombine to form an active layer ( 17), light of a first wavelength region corresponding to the bandgap energy Eg1 of the well layer formed by the compound semiconductor material may be generated. That is, light in the first wavelength region may be electrically generated in the active layer 17 .

Light of the first wavelength region generated by the active layer 17 may be emitted in all directions. A portion of the light in the first wavelength region may travel downward to reach the wavelength conversion layer 21 .

The well layer of the wavelength conversion layer 21 may be formed of a compound semiconductor material having a bandgap energy (Eg2) smaller than the energy (hν) of light in the first wavelength region. Accordingly, the light of the first wavelength region reaching the wavelength conversion layer 21 is absorbed by the wavelength conversion layer 21, and electrons of the wavelength conversion layer 21 by the light of the first wavelength region absorbed in this way After being excited, light of the second wavelength region corresponding to the bandgap energy of the well layer of the wavelength conversion layer 21 may be generated while being stabilized. In the wavelength conversion layer 21 , light in the second wavelength region may be generated as light emission.

As described above, the light of the first wavelength region is generated when a voltage is applied by using the voltage as the source, whereas the light of the second wavelength region is the light of the second wavelength region using the light of the first wavelength region as the source. It can be formed when absorbed.

As described above, in the horizontal semiconductor device according to the embodiment, by applying a voltage to the first and second electrodes 27 and 29, light in the first wavelength region is generated in the active layer 17 while the wavelength conversion layer ( 21), since light of the second wavelength region is generated, two color lights may be generated from one semiconductor device.

For example, when a semiconductor device package in which a molding member including a red phosphor is disposed on the horizontal semiconductor device according to the embodiment is manufactured, blue light is generated by electroluminescence in the active layer 17 of the semiconductor device, and the wavelength conversion layer In (21), green light is generated by photoluminescence, and red light is generated by photoluminescence from the red phosphor, so that white light can be obtained.

Therefore, since green light is generated in the semiconductor device, there is no need to separately include a green phosphor in the molding member, so that the structure is simple, the cost is reduced, and the deterioration of the color rendering index can be prevented.

5 shows a flip-type semiconductor device according to an embodiment.

The flip-type semiconductor device according to the embodiment may have a structure similar to that of the horizontal semiconductor device according to the embodiment, except that the reflective electrode layer 31 is formed instead of the transparent electrode layer 25 formed in the horizontal semiconductor device according to the embodiment. have.

That is, the reflective electrode layer 31 may be formed on the second semiconductor layer 19 . The reflective electrode layer 31 may include a metal material having excellent reflective properties.

Subsequently, mesa etching is performed to etch a partial region of the light emitting structure 13 , and a first electrode 27 is formed on the etched partial region, that is, the first semiconductor layer 15 , and the reflective electrode layer 31 is etched. The second electrode 29 may be formed on a partial region.

First, after mesa etching is performed, the reflective electrode layer 31 may be formed.

After the flip-type semiconductor device according to the manufactured embodiment is turned over, it may be electrically connected to a lead frame to manufacture a semiconductor device package.

In the flip-type semiconductor device according to the embodiment, the substrate 11 is disposed on top, and the third semiconductor layer 23 , the wavelength conversion layer 21 , the first semiconductor layer 15 , and the active layer are sequentially under the substrate 11 . (17), the second semiconductor layer 19 and the reflective electrode layer 31 may be disposed.

In the flip-type semiconductor device according to the embodiment having such a structure, the active layer 17 of the light emitting structure 13 may be disposed under the wavelength conversion layer 21 .

Light of the first wavelength region generated in the active layer 17 of the light emitting structure 13 by the voltage application may be emitted in all directions. In this case, a portion of the light of the first wavelength region generated in the active layer 17 is absorbed by the wavelength conversion layer 21 as it travels upward, so that the light of the second wavelength region may be generated in the wavelength conversion layer 21 . have. In addition, another portion of the light of the first wavelength region generated by the active layer 17 may travel downward and be reflected upwardly by the reflective electrode layer 31 . The reflected light of the first wavelength region may pass through the active layer 17 to the wavelength conversion layer 21 to generate light of the second wavelength region.

Therefore, according to the flip-type semiconductor device according to the embodiment, the light of the second wavelength region generated in the wavelength conversion layer 21 is generated in the active layer 17 and directly reached in the active layer 17 in addition to the light of the first wavelength region. Since it is generated by the light of the first wavelength region that is generated and reflected by the reflective electrode layer 31 and reached, the intensity of the light of the second wavelength region is further increased, thereby improving color gamut.

Meanwhile, in the flip-type semiconductor device shown in FIG. 5 , the uppermost substrate 11 may be removed. By removing the substrate 11 as described above, the thickness of the flip-type semiconductor device can be minimized, light loss that is lost while light passes through the substrate 11 can be prevented, and optical efficiency can be improved.

(Second embodiment)

6 is a diagram illustrating a semiconductor device according to a second embodiment.

The second embodiment is the same as the first embodiment except for the fourth semiconductor layer 33 . In the second embodiment, the same reference numerals are assigned to components having the same structure, shape or function as those of the first embodiment, and detailed descriptions thereof will be omitted. Parts omitted in the following description can be easily understood from the description of the first embodiment.

Referring to FIG. 6 , the semiconductor device 10A according to the second embodiment may include a wavelength conversion layer 21 and a light emitting structure 13 disposed on one side of the wavelength conversion layer 21 .

The light emitting structure 13 may include a first semiconductor layer 15 , an active layer 17 , and a second semiconductor layer 19 . A third semiconductor layer 23 may be disposed on the other side of the wavelength conversion layer 21 .

The fourth semiconductor layer 33 may be disposed between the wavelength conversion layer 21 and the light emitting structure 13 . Specifically, the fourth semiconductor layer 33 may be disposed between the wavelength conversion layer 21 and the first semiconductor layer 15 of the light emitting structure 13 .

When a voltage is applied to the light emitting structure 13 , the fourth semiconductor layer 33 prevents current loss by flowing in the third semiconductor layer 23 disposed under the wavelength conversion layer 21 . can give

The fourth semiconductor layer 33 may be formed of a compound semiconductor material of AlxInyGa(1-xy)N (0≤x≤1, 0≤y≤1, 0≤x+y≤1), but is not limited thereto. does not For example, the fourth semiconductor layer 33 may include at least one selected from the group consisting of InAlGaN, GaN, AlGaN, InGaN, AlN, InN, AlInN, GaAs, AlGaAs, GaAsP GaP, InP, GaInP and AlGaInP. is not limited to

The fourth semiconductor layer 33 may have a thickness of about 1 μm or less.

The fourth semiconductor layer 33 may have the same conductivity type as the second semiconductor layer 19 DT. For example, the fourth semiconductor layer 33 may include a p-type dopant such as Mg, Zn, Ca, Sr, or Ba. The doping concentration of the fourth semiconductor layer 33 may be about 1×1017 cm −3 to about 2×1019 cm −3 .

The third semiconductor layer 23 , the wavelength conversion layer 21 , the fourth semiconductor layer 33 , and the light emitting structure 13 may be grown on the substrate 11 using MOCVD equipment.

(Example 3)

7 is a diagram illustrating a semiconductor device according to a third embodiment.

The third embodiment is the same as the first and second embodiments except for the second wavelength conversion layer 35 that generates light in the third wavelength region. In the third embodiment, the same reference numerals are assigned to components having the same structure, shape or function as those of the first and second embodiments, and detailed descriptions thereof will be omitted. Parts omitted from the following description can be easily understood from the description of the first and second embodiments.

Referring to FIG. 7 , the semiconductor device 10B according to the third embodiment includes a light emitting structure 13 , a first wavelength conversion layer 21 disposed on one side of the light emitting structure 13 , and a light emitting structure 13 . It may include a second wavelength conversion layer 35 disposed on the other side. The first wavelength conversion layer 21 may be the wavelength conversion layer shown in FIGS. 1 to 6 .

The light emitting structure 13 may include a first semiconductor layer 15 , an active layer 17 , and a second semiconductor layer 19 .

Specifically, the first wavelength conversion layer 21 may be disposed under the first semiconductor layer 15 of the light emitting structure 13 . The second wavelength conversion layer 35 may be disposed on the second semiconductor layer 19 of the light emitting structure 13 .

The semiconductor device 10B according to the third embodiment may further include a third semiconductor layer 23 disposed under the first wavelength conversion layer 21 .

The third semiconductor layer 23 , the first wavelength conversion layer 21 , the light emitting structure 13 , and the second wavelength conversion layer 35 may be grown on the substrate 11 using MOCVD equipment.

Since the third semiconductor layer 23, the first wavelength conversion layer 21, and the light emitting structure 13 can be easily understood from the semiconductor devices 10 and 10A according to the first and second embodiments, a detailed description is given below. omit

The second wavelength conversion layer 35 may generate light in the third wavelength region. The light of the third wavelength region may be red light in a range of approximately 610 nm to approximately 760 nm, but is not limited thereto.

The light of the third wavelength region may not be generated by itself, but may be generated using the light of the first wavelength region. That is, a portion of the light of the first wavelength region generated by the active layer 17 may travel upward of the active layer 17 and be absorbed by the second wavelength conversion layer 35 . In this case, the light of the third wavelength region may be generated by the absorbed light of the first wavelength region.

Accordingly, the second wavelength conversion layer 35 may perform photo luminescence (PL) that converts light into another light, that is, light in the third wavelength region in response to the same optical signal as light in the first wavelength region. have.

The second wavelength conversion layer 35 may include any one of a multiple quantum well structure (MQW), a quantum dot structure, or a quantum wire structure. In the second wavelength conversion layer 35 , the well layer and the barrier layer may be repeatedly formed with the well layer and the barrier layer as one cycle. Since the repetition period of the well layer and the barrier layer can be changed according to the characteristics of the semiconductor device, it is not limited thereto.

When a period composed of a well layer and a barrier layer is defined as a pair, the second wavelength conversion layer 35 may include about 1 pair to about 20 pairs of a well layer and a barrier layer, but this is not limited to

The second wavelength conversion layer 35 may include, for example, a well layer and a barrier layer such as InGaAlP/InGaAlP, InGaAlP/GaN, InGaAlP/InGaP, or InGaP/InGaP. The bandgap energy of the barrier layer of the second wavelength conversion layer 35 may be greater than the bandgap energy Eg3 of the well layer.

Light in the third wavelength region may be determined by the bandgap energy Eg3 of the well layer of the second wavelength conversion layer 35 . Accordingly, the well layer of the second wavelength conversion layer 35 may include a compound semiconductor material having a bandgap energy Eg3 corresponding to light in the third wavelength region.

The well layer may have a thickness of approximately 1 nm to approximately 10 nm, and the barrier layer may have a thickness of approximately 1 nm to approximately 20 nm.

The second wavelength conversion layer 35 may not include a dopant.

The second wavelength conversion layer 35 may be doped with an n-type dopant such as Si, but is not limited thereto. The doping concentration of the second wavelength conversion layer 35 may be 1×1017 cm −3 to 2×1019 cm −3 . In this way, the intensity of light in the third wavelength region generated in the second wavelength conversion layer 35 may be increased by doping.

The n-type dopant may be included in the well layer and/or the barrier layer of the second wavelength conversion layer 35 .

In order for the second wavelength conversion layer 35 to generate light in the third wavelength region, light in the first wavelength region must be absorbed. In order for the light of the first wavelength region to be absorbed by the second wavelength conversion layer 35 , the energy hν of the light of the first wavelength region is at least greater than the bandgap energy Eg3 of the well layer of the second wavelength conversion layer 35 . should be big Since the energy hν of light in the first wavelength region corresponds to the bandgap energy Eg1 of the well layer of the active layer 17, the bandgap energy Eg3 of the well layer of the second wavelength conversion layer 35 is the active layer ( 17) is smaller than the bandgap energy (Eg1) of the well layer.

Since the wavelength region is inversely proportional to the band gap energy, as described above, when blue light is generated from the active layer 17 of the light emitting structure 13 , the band gap is smaller than the band gap energy Eg1 of the well layer of the active layer 17 . In the second wavelength conversion layer 35 having energy Eg3 , red light having a larger wavelength range than that of blue light generated in the active layer 17 may be generated.

In addition, the bandgap energy Eg3 of the well layer of the second wavelength conversion layer 35 may be smaller than the bandgap energy Eg2 of the well layer of the first wavelength conversion layer 21 . In this case, red light having a larger wavelength range than that of green light generated by the first wavelength conversion layer 21 may be generated.

In summary, the first active layer 17 of the light emitting structure 13 may generate light in the first wavelength region as electroluminescence by applying an electric voltage. The first wavelength conversion layer 21 disposed under the light emitting structure 13 may generate light in the second wavelength region as light emission by using the light in the first wavelength region. The second wavelength conversion layer 35 disposed on the light emitting structure 13 may generate light in the third wavelength region as light emission by using the light in the first wavelength region.

The light of the first wavelength region may be, for example, blue light in a range of about 400 nm to about 470 nm, but is not limited thereto. The light of the second wavelength region may be, for example, green light in a range of about 500 nm to about 560 nm, but is not limited thereto. The light of the third wavelength region may be red light in a range of approximately 610 nm to approximately 760 nm, but is not limited thereto.

Since the semiconductor device according to the third embodiment emits all of blue light, green light, and red light to realize white light, an additional material for generating another color light is included or an additional layer is used when manufacturing a semiconductor device package. Since a process including a layer is not required, it is possible to reduce the manufacturing cost and simplify the structure.

In the semiconductor device according to the third embodiment, the entire eye is applied to the light emitting structure 13 only to generate blue light, and green light or red light is generated using blue light, so that a separate voltage application is not required. It is possible to reduce power consumption and reduce the number of electrical connection lines such as driving circuits and wires.

Meanwhile, the first wavelength conversion layer 21 and the second wavelength conversion layer 35 may be exchanged with each other. That is, the second wavelength conversion layer 35 may be disposed at the position of the first wavelength conversion layer 21 , and the first wavelength conversion layer 21 may be disposed at the position of the second wavelength conversion layer 35 . In this case, the first wavelength conversion layer 21 may be disposed on the light emitting structure 13 , and the second wavelength conversion layer 35 may be disposed under the light emitting structure 13 .

8 shows a horizontal type semiconductor device according to an embodiment. That is, FIG. 8 shows a horizontal type semiconductor device manufactured using the semiconductor device 10B according to the third embodiment shown in FIG. 7 .

As shown in FIG. 8 , a portion of the second semiconductor layer 19 may be exposed by primarily mesa-etching the semiconductor device 10B according to the third embodiment shown in FIG. 7 . Subsequently, a portion of the first semiconductor layer 15 may be exposed by secondary mesa-etching of the corresponding semiconductor device 10B. The edge of the second wavelength conversion layer 35 may be partially removed due to the primary mesa etching. Edges of the second wavelength conversion layer 35 , the second semiconductor layer 19 , the active layer 17 , and the first semiconductor layer 15 may be partially removed due to the secondary mesa etching.

Subsequently, a first electrode 27 is formed on a partial region of the exposed first semiconductor layer 15 , and a second electrode is formed on a partial region of the second semiconductor layer of the exposed second semiconductor layer 19 . (29) can be formed.

In the horizontal semiconductor device according to the manufactured embodiment, when a voltage is electrically applied to the first and second electrodes 27 and 29, a current flows in the light emitting structure 13 by this voltage, so that electrons and holes Light of the first wavelength region may be generated by the recombination of . The generated light in the first wavelength region may be emitted in all directions.

A portion of the light in the first wavelength region may be absorbed by the first wavelength conversion layer 21 as it travels downward. In this case, the first wavelength conversion layer 21 may generate light in the second wavelength region as light emission by using the absorbed light in the first wavelength region.

Another portion of the light in the first wavelength region may be absorbed by the second wavelength conversion layer 35 by traveling upward. In this case, the second wavelength conversion layer 35 may generate light in the third wavelength region as light emission using the absorbed light in the first wavelength region.

When the horizontal type semiconductor device shown in FIG. 8 is turned over and adopted for a semiconductor device package, it may be used as a flip type semiconductor device. In this case, the reflective electrode layer 31 may be additionally formed on the second wavelength conversion layer 35 , but the present invention is not limited thereto.

(Example 4)

9 is a diagram illustrating a semiconductor device according to a fourth embodiment.

The fourth embodiment is the same as the first to third embodiments except that the second wavelength conversion layer 37 is disposed under the light emitting structure 13 . In the fourth embodiment, the same reference numerals are assigned to components having the same structure, shape, or function as those of the first to third embodiments, and detailed descriptions thereof will be omitted. Parts omitted from the following description can be easily understood from the description of the first to third embodiments.

Referring to FIG. 9 , the semiconductor device 10C according to the fourth embodiment includes a light emitting structure 13 , a first wavelength conversion layer 21 and a second wavelength conversion layer disposed on one side of the light emitting structure 13 ( 37) may be included.

The light emitting structure 13 may include a first semiconductor layer 15 , an active layer 17 , and a second semiconductor layer 19 .

The first wavelength conversion layer 21 may be disposed under the first semiconductor layer 15 of the light emitting structure 13 . The second wavelength conversion layer 37 may be disposed under the first wavelength conversion layer 21 .

The semiconductor device 10C according to the fourth embodiment may further include a third semiconductor layer 23 disposed under the second wavelength conversion layer 37 .

The third semiconductor layer 23 , the second wavelength conversion layer 37 , the first wavelength conversion layer 21 , and the light emitting structure 13 may be grown on the substrate 11 using MOCVD equipment.

In summary, the first active layer 17 of the light emitting structure 13 may generate light in the first wavelength region by applying an electric voltage, and may emit the generated light in the first wavelength region in all directions. A portion of the generated light in the first wavelength region may travel downward and pass through the first wavelength converter and the second wavelength converter. In this case, the first wavelength converter may absorb light in the first wavelength region and generate light in the second wavelength region as light emission using the absorbed light in the first wavelength region. The second wavelength converter may absorb light in the first wavelength region and generate light in the third wavelength region as light emission using the absorbed light in the first wavelength region.

According to the semiconductor device 10C according to the fourth embodiment, both the first wavelength conversion layer 21 and the second wavelength conversion layer 37 are disposed under the light emitting structure 13, so that the light emitting structure 13 generates Light propagating in a downward direction among the light of the first wavelength region may be used to generate light of the second wavelength region and light of the third wavelength region. Light in the remaining first wavelength region may be emitted to the outside of the semiconductor device without loss, thereby minimizing loss of light in the first wavelength region, thereby preventing a decrease in color gamut.

On the other hand, unlike the semiconductor device 10C according to the fourth embodiment shown in FIG. 9 , the second wavelength conversion layer 37 is disposed under the first semiconductor layer 15 of the light emitting structure 13 , The first wavelength conversion layer 21 may be disposed under the second wavelength conversion layer 37, but is not limited thereto. In this case, the third semiconductor layer 23 may be disposed under the first wavelength conversion layer 21 .

(Example 5)

10 is a diagram illustrating a semiconductor device according to a fifth embodiment.

The fifth embodiment is the same as the first to fourth embodiments except that the first wavelength conversion layer 21 and the second wavelength conversion layer 39 are spaced apart from each other. In the fifth embodiment, components having the same structure, shape, or function as those of the first to fourth embodiments are assigned the same reference numerals and detailed descriptions thereof will be omitted. Parts omitted from the following description can be easily understood from the description of the first to fourth embodiments.

Referring to FIG. 10 , a semiconductor device 10D according to the fifth embodiment includes a light emitting structure 13 , a first wavelength conversion layer 21 and a second wavelength conversion layer disposed on one side of the light emitting structure 13 ( 39) may be included.

The light emitting structure 13 may include a first semiconductor layer 15 , an active layer 17 , and a second semiconductor layer 19 .

The first wavelength conversion layer 21 may be disposed under the first semiconductor layer 15 of the light emitting structure 13 . The second wavelength conversion layer 39 may be disposed under the first wavelength conversion layer 21 .

The semiconductor device 10D according to the fifth embodiment may further include a third semiconductor layer 23 disposed under the second wavelength conversion layer 39 .

In addition, the semiconductor device 10D according to the fifth embodiment may further include a fifth semiconductor layer 41 disposed between the first wavelength conversion layer 21 and the second wavelength conversion layer 39 .

The fifth semiconductor layer 41 may be formed of a compound semiconductor material of AlxInyGa(1-xy)N (0≤x≤1, 0≤y≤1, 0≤x+y≤1), but is not limited thereto. does not For example, the fifth semiconductor layer 41 may include at least one selected from the group consisting of InAlGaN, GaN, AlGaN, InGaN, AlN, InN, AlInN, GaAs, AlGaAs, GaAsP GaP, InP, GaInP, and AlGaInP. is not limited to

The fifth semiconductor layer 41 may have a thickness of about 1 μm to about 10 μm. The thickness of the third semiconductor layer 23 may be smaller than the thickness of the first semiconductor layer 15 or the thickness of the third semiconductor layer 23 . The thickness of the third semiconductor layer 23 may be the same as or greater than the thickness of the fourth semiconductor layer 33 of the second embodiment.

The fifth semiconductor layer 41 may have the same conductivity type as the first semiconductor layer 15 or the third semiconductor layer 23 . For example, the fifth semiconductor layer 41 may have n such as Si, Ge, or Sn. It may contain a type dopant. The doping concentration of the fifth semiconductor layer 41 may be about 1×1017 cm −3 to about 2×1019 cm −3 . The fifth semiconductor layer 41 may provide electrons to the active layer 17 .

The third semiconductor layer 23 , the second wavelength conversion layer 39 , the fifth semiconductor layer 41 , the first wavelength conversion layer 21 , and the light emitting structure 13 are formed on the substrate 11 using MOCVD equipment. can be grown

According to the semiconductor device 10D according to the fifth embodiment, the first wavelength conversion layer 21 and the second wavelength conversion layer 39 are disposed to be spaced apart from each other via the fifth semiconductor layer 41, so that the first Color mixing or interference between the light of the second wavelength region generated by the wavelength conversion layer 21 and the light of the third wavelength region generated by the second wavelength conversion layer 39 may be minimized.

On the other hand, unlike the semiconductor device 10D according to the fifth embodiment shown in FIG. 10 , the second wavelength conversion layer 39 is disposed under the first semiconductor layer 15 of the light emitting structure 13 , The first wavelength conversion layer 21 may be disposed under the fifth semiconductor layer 41 , but is not limited thereto.

(Semiconductor device package)

11 is a diagram illustrating a semiconductor device package according to an embodiment.

11 , the semiconductor device package according to the embodiment includes a body 311 having a cavity 315 , a first lead frame 321 and a second lead frame 323 disposed in the body 311 . ), the semiconductor device 100 , wires 331 , and a molding member 341 .

The body 311 may include a conductive material or an insulating material. The body 311 may be formed of at least one of a resin material, a silicon material, a metal material, photo sensitive glass (PSG), sapphire (Al2O3), and a printed circuit board (PCB). The resin material may be polyphthalamide (PPA) or epoxy.

The body 311 has a cavity 315 having an open top and a side and a bottom. The cavity 315 may include a cup structure or a recess structure concave from the upper surface of the body 311 , but is not limited thereto.

The first leadframe 321 is disposed in a first area of the bottom area of the cavity 315 , and the second leadframe 323 is disposed in a second area of the bottom area of the cavity 315 . The first leadframe 321 and the second leadframe 323 may be spaced apart from each other in the cavity 315 .

The first and second leadframes 321 and 323 are made of a metal material, for example, titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), or tantalum (Ta). , platinum (Pt), tin (Sn), silver (Ag), may include at least one of phosphorus (P). The first and second leadframes 321 and 323 may be formed of a single metal layer or a multi-layered metal layer.

The semiconductor device 100 may be disposed on at least one of the first and second lead frames 321 and 223 . The semiconductor device 100 is, for example, disposed on the first leadframe 321 and connected to the first and second leadframes 321 and 223 with a wire 331 .

The semiconductor device 100 may emit light in at least two wavelength ranges. The semiconductor device 100 may include a group 3-5 or group 2-6 compound semiconductor material. The semiconductor device 100 may employ the technical features of FIGS. 1 to 10 .

A molding member 341 may be disposed in the cavity 315 of the body 311 . The molding member 341 may include a light-transmitting resin layer such as silicone or epoxy. The molding member 341 may be formed in a single layer or in multiple layers.

The molding member 341 may or may not include a phosphor for changing the wavelength of light emitted from the semiconductor device 100 .

For example, when the semiconductor device according to the first to second embodiments in which blue light and green light are generated is employed in the semiconductor device package according to the embodiment, the molding member 341 may include, for example, a red phosphor. Accordingly, white light may be obtained by the blue light and green light generated from the semiconductor device and the red light wavelength-converted by the red phosphor included in the molding member.

For example, when the semiconductor device according to the third to fifth embodiments in which all of blue light, green light, and red light are generated is adopted in the semiconductor device package according to the embodiment, the molding member 341 may not include a red phosphor. can Even in this case, if necessary, the molding member may include a phosphor for generating light of a color other than red light, but is not limited thereto.

The surface of the molding member 341 may be formed in a flat shape, a concave shape, a convex shape, or the like, but is not limited thereto.

A lens (not shown) may be further formed on the upper portion of the body 311 . The lens may include a structure of a concave and/or convex lens, and may control light distribution of light emitted from the semiconductor device 100 .

A protection device (not shown) may be disposed in the semiconductor device package. The protection device may be implemented as a thyristor, a Zener diode, or a transient voltage suppression (TVS).

The above-described semiconductor device package may be used, for example, as a light source of an image display device or a light source of a lighting device.

The light source of the image display device may include, for example, a backlight unit. The backlight unit may be classified into an edge type and a direct type according to the arrangement of the semiconductor device package. In the edge type, the semiconductor device package may be disposed on the side surface of the light guide plate. In the direct type, the semiconductor device package may be disposed under the display panel.

The light source of the lighting device may include a luminaire, a bulb-type lamp, and a light source of a mobile terminal.

Features, structures, effects, etc. described in the above embodiments are included in at least one embodiment, and are not necessarily limited to only one embodiment. Furthermore, features, structures, effects, etc. illustrated in each embodiment can be combined or modified for other embodiments by those of ordinary skill in the art to which the embodiments belong. Accordingly, the contents related to such combinations and modifications should be interpreted as being included in the scope of the embodiments.

In the above, the embodiment has been mainly described, but this is only an example and does not limit the embodiment, and those of ordinary skill in the art to which the embodiment belongs are provided with several examples not illustrated above in the range that does not deviate from the essential characteristics of the embodiment. It can be seen that the transformation and application of branches are possible. For example, each component specifically shown in the embodiment can be implemented by modification. And the differences related to these modifications and applications should be interpreted as being included in the scope of the embodiments set forth in the appended claims.

10, 10A, 10B, 10C, 10D: semiconductor device
11: Substrate
13: light emitting structure
15: first semiconductor layer
17: active layer
19: second semiconductor layer
21: wavelength conversion layer
23: third semiconductor layer
25: transparent electrode layer
27: first electrode
29: second electrode
31: reflective electrode layer
33: fourth semiconductor layer
35, 37, 39: second wavelength conversion layer
41: fifth semiconductor layer

Claims (18)

Board;
a first wavelength conversion layer on the substrate;
a first semiconductor layer on the first wavelength conversion layer;
an active layer on the first semiconductor layer;
a second semiconductor layer on the active layer;
a second wavelength conversion layer on the second semiconductor layer;
a first electrode electrically connected to the first semiconductor layer; and
a second electrode electrically connected to the second semiconductor layer; and
The active layer emits blue light in a first wavelength region,
The first wavelength conversion layer is made of two different semiconductor layers,
The first wavelength conversion layer emits green light in a second wavelength region by the blue light generated in the active layer,
The second wavelength conversion layer generates red light in a third wavelength region by the blue light generated in the active layer,
The second wavelength conversion layer and the second electrode are disposed on the same surface of the second semiconductor layer
semiconductor device. According to claim 1,
The active layer is made of two different semiconductor layers,
The two semiconductor layers of each of the active layer and the first wavelength conversion layer include a well layer and a barrier layer,
A second bandgap energy of the well layer of the first wavelength conversion layer is less than a first bandgap energy of the well layer of the active layer. 3. The method of claim 2,
a third semiconductor layer between the substrate and the first wavelength conversion layer; and
a fourth semiconductor layer between the first wavelength conversion layer and the first semiconductor layer; further comprising,
The active layer, the first wavelength conversion layer, and the second wavelength conversion layer include a compound semiconductor material,
The second wavelength conversion layer is a semiconductor device that generates red light in a third wavelength region by the blue light generated in the active layer. 4. The method of claim 3,
a third bandgap energy of the well layer of the second wavelength conversion layer is less than a first bandgap energy of the well layer of the active layer and less than a second bandgap energy of the well layer of the first wavelength conversion layer . delete delete delete delete delete delete delete delete delete delete delete delete delete delete

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