KR20080110750A - Red organic light emitting element and display device provided with same, donor substrate and transfer method using same, method of manufacturing display device, and system of manufacturing display device - Google Patents

Abstract

A red color organic light emitting element formed by a simple process of a thermal transfer method and a display device including the light emitting element are provided. A donor substrate (100) has a reflective layer (120) in a red color transfer layer preparation region (100R1) viewed from a front surface of a substrate (110), and the reflective layer (120) in a non-transfer region (100NP) viewed from a rear surface of the substrate (110). A red color transfer layer (200R) is entirely formed on the front surface of the substrate (110). Laser light (LB1) is irradiated from the front surface of the substrate (110) to form the red color transfer layer (200R) only in the red color transfer layer preparation region (100R1) and then a green color transfer layer (200G) is entirely formed on the front surface of the substrate (110). The donor substrate (100) is provided opposite to a base plate (11) and laser light (LB2) is irradiated from the rear surface of the substrate (110), so that the red color transfer layer (200R) and other portions than the non-transfer region (100NP) in a green color transfer layer (200G) are collectively transferred to the base plate (11). ® KIPO & WIPO 2009

Description

RED ORGANIC LIGHT EMITTING ELEMENT AND DISPLAY DEVICE PROVIDED WITH SAME, DONOR SUBSTRATE AND TRANSFER METHOD USING SAME, METHOD OF MANUFACTURING DISPLAY DEVICE, AND SYSTEM OF MANUFACTURING DISPLAY DEVICE}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a red organic light emitting element and display device formed by a thermal transfer method, a donor substrate and a transfer method that can be used for the manufacture thereof, a manufacturing method of a display device, and a manufacturing system of a display device.

As one of the manufacturing methods of an organic light emitting element, the pattern manufacturing method using thermal transfer is disclosed (for example, refer patent document 1 and patent document 2). In the conventional thermal transfer method, in order to form red, green, and blue tricolor organic light emitting elements, three transfers are generally required in the same manner as the number of emission colors. The same applies to the case where a common layer is employed as part of the organic layer (see Patent Document 3, for example).

Patent Document 1: Japanese Patent Application Laid-Open No. 9-167684

Patent Document 2: Japanese Patent Application Laid-Open No. 2002-216957

Patent Document 3: Japanese Patent Application Laid-Open No. 2005-235742

However, in the transfer method, various complicated processes such as alignment, separation, and laser irradiation of the donor substrate and the substrate to be transferred are required, resulting in complicated and high liquidity of the apparatus, and shortening the tact time. Was also difficult. Moreover, since the donor substrate used for each color is needed, there also existed a problem that running cost became high.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object thereof is to provide a red organic light emitting device which can be formed by a simple process using a thermal transfer method, a display device having the same, a donor substrate and a transfer method which can be used for the manufacture thereof A manufacturing method of a display apparatus and a manufacturing system of a display apparatus are provided.

The red organic light emitting element according to the present invention includes a first electrode, a red organic layer having a mixed layer containing a red light emitting material and a green light emitting material, and a second electrode on the substrate.

The display device according to the present invention includes the red organic light emitting element of the present invention.

In the red organic light emitting device according to the present invention or the display device according to the present invention, since the red organic layer has a mixed layer containing a red light emitting material and a green light emitting material, energy transfer occurs to a red with low energy level, and red light emission is achieved. Become dominant.

The first donor substrate according to the present invention is for transferring a transfer layer to another substrate by selectively forming a transfer layer on a part of the surface side of the substrate and irradiating radiation from the back surface side of the substrate. In view of this, a reflection layer is provided in the region where the transfer layer is to be formed, and an absorption layer is provided in a region other than the region where the transfer layer is to be formed.

The first transfer method according to the present invention is a method of transferring a transfer layer to another substrate from a donor substrate in which a transfer layer is selectively formed on a part of the substrate, which is a donor substrate, which is viewed from the surface side of the substrate. The reflective layer is provided in the formation area, and the absorption layer is provided in areas other than the formation area of the transfer layer, and the transfer layer is formed on the entire surface side of the substrate, and the radiation is irradiated from the surface side of the substrate. The step of selectively removing the transfer layer in the region where the absorber layer is formed when viewed from the surface side of the substrate, and placing the donor substrate and another substrate opposite to each other to irradiate radiation from the back surface side of the substrate, thereby providing And a step of transferring the transfer layer to another substrate.

The first transfer method according to the present invention uses the first donor substrate of the present invention, and after the transfer layer is formed on the entire surface side of the substrate, the radiation is irradiated from the surface side of the substrate to be viewed from the surface side of the substrate. At this time, the transfer layer in the region where the absorber layer is formed is selectively removed, and the transfer layer remains only on the reflective layer. Then, the donor substrate and the other substrate are disposed to face each other, and radiation is radiated from the back side of the substrate to transfer the transfer layer on the reflective layer.

The second donor substrate according to the present invention is for forming a transfer layer on the surface side of the substrate and selectively transferring a portion of the transfer layer to another substrate by irradiating radiation from the back side of the substrate. In view, a reflection layer is provided in the non-transfer region where the transfer layer is not transferred to another substrate, and an absorption layer is provided in regions other than the non-transfer region.

In the second transfer method according to the present invention, a portion of the transfer layer is selectively transferred to another substrate from the donor substrate having the transfer layer formed on the substrate, and the transfer layer is another substrate when viewed from the back side of the substrate as the donor substrate. A reflection layer is provided in the non-transfer region not transferred to the non-transfer region, and an absorbing layer is provided in the regions other than the non-transfer region, and the transfer layer is formed on the entire surface side of the substrate; And irradiating the radiation from the back side of the sea gas to selectively transfer a portion of the transfer layer other than the non-transfer region to another substrate.

The second transfer method according to the present invention uses the second donor substrate of the present invention, and after the transfer layer is formed on the entire surface side of the substrate, the donor substrate and the other substrate are disposed to face each other, and the radiation from the back surface side of the substrate. By irradiating, portions other than the non-transfer region in the transfer layer are selectively transferred to other substrates, and portions of the non-transfer region remain on the substrate without being transferred.

The manufacturing method of the display apparatus by this invention is a method of manufacturing the display apparatus provided with the red organic light emitting element, the green organic light emitting element, and the blue organic light emitting element on a board | substrate, when it sees from the surface side of a base material, The red transfer layer to be formed corresponding to the region where the red organic light emitting element is to be formed has a reflective layer and an absorbent layer to a region other than the red transfer layer to be formed, while the green transfer layer non-transfer region is to be seen from the back side of the substrate. By using a donor substrate having an absorbing layer in a region other than the reflective layer and the green transfer layer non-transfer region, forming a red transfer layer containing a red light emitting material on the entire surface side of the substrate, and irradiating radiation from the surface side of the substrate. The entire surface side of the substrate after selectively removing the red transfer layer in the region where the absorber layer is formed, A transfer layer forming step of forming a green transfer layer containing a green light emitting material, and a donor substrate and a substrate disposed opposite to each other to irradiate radiation from the back side of the substrate, thereby radiating the green transfer layer non-transfer region of the red transfer layer and the green transfer layer. It includes a batch transfer step of collectively transferring a portion other than the substrate.

A manufacturing system for a display device according to the present invention is a system for manufacturing a display device having a red organic light emitting element, a green organic light emitting element, and a blue organic light emitting element on a substrate, which is viewed from the surface side of the substrate. The red transfer layer to be formed corresponding to the region where the red organic light emitting element is to be formed has a reflective layer and an absorbent layer to a region other than the red transfer layer to be formed, while the green transfer layer non-transfer region is to be seen from the back side of the substrate. A red transfer layer forming portion for forming a red transfer layer containing a red light emitting material on the entire surface side of the substrate using a donor substrate having an absorbing layer in a region other than the reflective layer and the green transfer layer non-transfer region, and the surface side of the substrate. By irradiating the radiation from to selectively remove the red transfer layer in the region where the absorption layer is formed when viewed from the surface side of the substrate A transfer layer forming portion including a four-layer selective removing portion and a green transfer layer forming portion for forming a green transfer layer containing a green light emitting material on the entire surface side of the substrate; a donor substrate and the substrate are disposed to face each other; By irradiating the radiation in the above, a batch transfer portion for collectively transferring a portion of the red transfer layer and the green transfer layer other than the green transfer layer non-transfer region to the substrate is provided.

According to the red organic light emitting element of the present invention or the display device of the present invention, since the red organic layer has a mixed layer containing the red light emitting material and the green light emitting material, the red organic light emitting material containing the red light emitting material from the donor substrate by the thermal transfer method. The mixed layer may be formed by a simple process of collectively transferring the green transfer layer including the transfer layer and the green light emitting material.

According to the first transfer method of the present invention, since the first donor substrate of the present invention is used, after the transfer layer is formed on the entire surface side of the substrate, the transfer layer is selectively removed by irradiating radiation from the surface side of the substrate. The transfer layer can remain only on the reflective layer.

According to the second transfer method of the present invention, since the second donor substrate of the present invention is used, after the transfer layer is formed on the entire surface side of the substrate, the donor substrate and the substrate are disposed to face each other to radiate radiation from the back surface of the substrate. By irradiating, portions other than the non-transfer region in the transfer layer can be selectively transferred to the substrate, and remain on the substrate without transferring the portion of the non-transfer region.

According to the method of manufacturing the display device of the present invention or the manufacturing system of the display device of the present invention, the donor substrate of the present invention is used, and a red transfer layer and a green transfer layer are formed on the donor substrate to collectively transfer the substrate. The transfer for forming the red organic light emitting element and the green organic light emitting element can be performed at once, and can be produced by a simple process.

1 is a cross-sectional view illustrating a configuration of a display device according to an exemplary embodiment of the present invention.

FIG. 2 is a flowchart showing the flow of the manufacturing method of the display device shown in FIG. 1.

3 is a cross-sectional view showing the manufacturing method shown in FIG. 2 in the order of process.

4 is a cross-sectional view showing the configuration of a donor substrate used in the manufacturing method shown in FIG. 2.

FIG. 5 is a cross-sectional view showing a modification of the donor substrate shown in FIG. 4.

6 is a cross-sectional view illustrating a process following FIG. 3.

7 is a cross-sectional view illustrating a process following FIG. 6.

8 is a cross-sectional view illustrating a process following FIG. 7.

9 is a cross-sectional view illustrating a process following FIG. 8.

10 is a cross-sectional view showing the process of fabrication and regeneration of the donor substrate in the order of the steps.

11 is a cross-sectional view illustrating a process following FIG. 9.

FIG. 12 is a view schematically showing an example of a manufacturing system of a display device by the manufacturing method of the display device shown in FIG. 2.

It is sectional drawing which shows the structure of the donor substrate which concerns on the modification of this invention.

14 is a cross-sectional view showing a modification of the donor substrate shown in FIG. 13.

FIG. 15 is a cross-sectional view showing another modified example of the donor substrate shown in FIG. 13.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

1 illustrates a cross-sectional structure of a display device using a red organic light emitting diode according to an exemplary embodiment of the present invention. This display device can be used as an ultra-thin organic light emitting color display device or the like. For example, a red organic light emitting element 10R that emits red light on a substrate 11 made of glass or the like, and green. The green organic light emitting element 10G for generating light and the blue organic light emitting element 10B for generating blue light are sequentially formed in a matrix as a whole. Meanwhile, the red organic light emitting element 10R, the green organic light emitting element 10G, and the blue organic light emitting element 10B have an elongated paper-like planar shape, and the adjacent red organic light emitting element 10R and the green organic light emitting element 10G. ) And the blue organic light emitting element 10B constitute one pixel. Pixel pitch is 300 micrometers, for example.

The red organic light emitting element 10R has a first electrode 12 as an anode, an insulating film 13, a red organic layer 14R including a mixed layer 14RC described later, and a second as a cathode from the substrate 11 side. The electrodes 15 have a configuration in which they are stacked in this order. The green organic light emitting element 10G is, from the substrate 11 side, a green organic layer 14G including a first electrode 12, an insulating film 13, a green monochromatic layer 14GC described later, and a second electrode ( 15) has a stacked structure in this order. The blue organic light emitting element 1OB includes the first electrode 12, the insulating film 13, the blue organic layer 14B including the blue monochromatic layer 14D described later, and the second electrode from the substrate 11 side. (15) has a configuration laminated in this order.

The red organic light emitting element 10R, the green organic light emitting element 10G, and the blue organic light emitting element 1OB are covered with a protective film 16, and further, an adhesive layer 20 is interposed on the protective film 16. On the other hand, the sealing board 30 which consists of glass etc. is sealed by bonding over the whole surface.

The first electrode 12 is made of, for example, indium tin composite oxide (ITO). On the other hand, the first electrode 12 may be provided on a TFT (thin film transistor) formed on the substrate 11 and a planarization insulating film (all not shown) covering the substrate 11 so as to enable active matrix driving. In that case, the first electrode 12 is electrically connected to the TFT through the contact hole formed in the planarization insulating film.

The insulating film 13 is for ensuring the insulating property of the 1st electrode 12 and the 2nd electrode 15, and making a light emitting area into a desired shape correctly, For example, it is comprised from photosensitive resin, such as polyimide. Openings are formed in the insulating film 13 corresponding to the light emitting regions.

The red organic layer 14R is, for example, a hole injection layer 14A1, a hole transport layer 14A2, a mixed layer 14RC, a blue monochromatic layer 14D, and an electron transport layer 14E sequentially from the first electrode 12 side. ) Is laminated. The green organic layer 14G is, for example, a hole injection layer 14A1, a hole transport layer 14A2, a green monochrome layer 14GC, a blue monochrome layer 14D, and an electron transport layer sequentially from the first electrode 12 side. 14E was laminated | stacked. The blue organic layer 14B is, for example, a structure in which a hole injection layer 14A1, a hole transport layer 14A2, a blue monochrome layer 14D, and an electron transport layer 14E are laminated in order from the first electrode 12 side. Has Of these, the hole injection layer 14A1, the hole transport layer 14A2, the blue monochromatic layer 14D, and the electron transport layer 14E include the red organic light emitting element 10R, the green organic light emitting element 10G, and the blue organic light emitting element ( 10B) is the common layer. The hole injection layer 14A1 is a buffer layer for improving hole injection efficiency and preventing leakage. The hole transport layer 14A2 is for enhancing the hole transport efficiency to the mixed layer 14RC, the green monochrome layer 14GC, and the blue monochrome layer 14D which are light emitting layers. The mixed layer 14RC, the green monochrome layer 14GC, and the blue monochrome layer 14D are those in which electrons and holes are recombined and light is generated by applying an electric field. The electron transport layer 14E is for enhancing the electron transport efficiency to the mixed layer 14RC, the green monochrome layer 14GC, and the blue monochrome layer 14D. On the other hand, the hole injection layer 14A1, the hole transport layer 14A2, and the electron transport layer 14E can be provided as needed, and a structure may differ respectively depending on light emission color. An electron injection layer (not shown) made of LiF, Li ₂ O, or the like may be provided between the electron transport layer 14E and the second electrode 15.

The hole injection layer 14A1 has a thickness of, for example, 5 nm or more and 300 nm or less, for example, 25 nm, and 4,4 ', 4 "-tris (3-methylphenylphenylamino) triphenylamine (m-MTDATA). Or 4,4 ', 4 "-tris (2-naphthylphenylamino) triphenylamine (2-TNATA). The hole transport layer 14A2 has a thickness of, for example, 5 nm or more and 300 nm or less, for example, 30 nm, and 4,4'-bis (N-1-naphthyl-N-phenylamino) biphenyl (α-NPD). It consists of).

The mixed layer 14RC contains at least one of a red light emitting material, a hole transporting material, an electron transporting material, and both charge transporting materials. The red light emitting material may be fluorescent or phosphorescent. The mixed layer 14RC has a thickness of, for example, 10 nm or more and 100 nm or less, for example, 15 nm, and 2,6-bis [(4'-methok) as a red light emitting material in ADN (di (2-naphthyl) anthracene). It is comprised by mixing 30 weight% of cidiphenylamino) styryl] -1, 5- dicyano naphthalene (BSN).

The green monochromatic layer 14GC contains at least one of a green light emitting material, a hole transporting material, an electron transporting material, and both charge transporting materials. The green light emitting material may be fluorescent or phosphorescent. The green monochromatic layer 14GC has a thickness of, for example, 10 nm or more and 100 nm or less, for example, 15 nm, and is composed of 5% by weight of coumarin 6 mixed with ADN as a green light emitting material.

The blue monochromatic layer 14D contains at least one of a blue light emitting material, a hole transporting material, an electron transporting material, and both charge transporting materials. The blue light emitting material may be fluorescent or phosphorescent. The blue monochromatic layer 14D has a thickness of, for example, 10 nm or more and 100 nm or less, for example, 15 nm, and 4,4'-bis [2- {4- (N, N-diphenyl) as a blue light emitting material in ADN. It consists of a mixture of amino) phenyl} vinyl] biphenyl (DPAVBi) 2.5% by weight.

The electron transport layer 14E has, for example, a thickness of 5 nm or more and 300 nm or less, for example, 20 nm, and is composed of 8-hydroxyquinoline aluminum (Alq ₃ ).

The 2nd electrode 15 is comprised from the transparent electrode or the semi-permeable electrode, and the light generate | occur | produced in the mixed layer 14RC, the green monochromatic layer 14GC, and the blue monochromatic layer 14D is received from the 2nd electrode 15 side. It is supposed to be withdrawn. The second electrode 15 has a thickness of, for example, 5 nm or more and 50 nm or less, and is composed of a single element or an alloy of metal elements such as aluminum (Al), magnesium (Mg), calcium (Ca), and sodium (Na). have. Especially, the alloy of magnesium and silver (MgAg alloy) is preferable.

The protective film 16 is for preventing the ingress of moisture and the like into the red organic layer 14R, the green organic layer 14G, and the blue organic layer 14B. The protective film 16 is made of a material having low water permeability and low water absorption and has sufficient thickness. . The protective film 16 is made of a material having high transmittance to light generated in the mixed layer 14RC, the green monochrome layer 14GC, and the blue monochrome layer 14D, and having a transmittance of 80% or more, for example. . Such a protective film 16 is, for example, about 2 μm or 3 μm thick, and is made of an inorganic amorphous insulating material. Specifically, amorphous silicon (α-Si), amorphous silicon carbide (α-SiC), amorphous silicon nitride (α-Si _{1 - x} N _x ) and amorphous carbon (α-C) are preferable. Since these inorganic amorphous insulating materials do not comprise grain, it is low in water permeability and becomes the favorable protective film 16. FIG. The protective film 16 may be made of a transparent electrically conductive material such as ITO.

The adhesive layer 20 is made of, for example, a thermosetting resin or an ultraviolet curable resin.

The encapsulation substrate 30 is located on the second electrode 15 side of the red organic light emitting element 10R, the green organic light emitting element 10G, and the blue organic light emitting element 1OB, and is red together with the adhesive layer 20. The organic light emitting element 10R, the green organic light emitting element 10G, and the blue organic light emitting element 10B are sealed. In addition, the encapsulation substrate 30 is formed of a red organic light emitting element in order to extract light generated in the mixed layer 14RC, the green monochrome layer 14GC and the blue monochrome layer 14D from the second electrode 15 side. 10R), the green organic light emitting element 10G, and the blue organic light emitting element 10B.

This display device can be manufactured, for example, as follows.

FIG. 2 is a flowchart showing the flow of the manufacturing method of the display device, and FIGS. 3 to 11 show the manufacturing method shown in FIG.

First, as shown in Fig. 3A, the first electrode 12 made of the material described above is formed on the substrate 11 made of the material described above, for example, by a sputtering method. For example, it is molded into a predetermined shape by dry etching (step S101). On the other hand, at the predetermined position of the board | substrate 11, the alignment mark used for alignment with a donor board | substrate is formed in the collective transfer process mentioned later.

Subsequently, as shown in FIG. 3A, the photosensitive resin is applied over the entire surface of the substrate 11, and is molded by, for example, photolithography to correspond to the first electrode 12. An opening is formed in the film, and then fired to form the insulating film 13 (step S102).

Subsequently, as shown in Fig. 3B, for example, the hole injection layer 14A1 and the hole transport layer 14A2 made of the above-described thickness and material are sequentially formed by the vapor deposition method (step S103).

Thereafter, on the hole transport layer 14A2, the mixed layer 14RC is formed in the region 10R1 to be formed of the red organic light emitting element 10R by thermal transfer using a donor substrate, and the green organic light emitting element 10G is formed. The green monochromatic layer 14GC is formed in the region to be formed 10G1. This step includes a transfer layer forming step and a batch transfer step.

(Configuration of Donor Board)

4 shows the configuration of the donor substrate used in this step in an unused state in which no transfer layer is formed. The donor substrate 100 has a reflection layer 120 and an absorption layer 130 on the surface side of the base 110, that is, on the side opposite to the substrate 11. The base 110 is made of a material such as resin such as glass or acrylic, which has a rigidity capable of alignment with the substrate 11 and high transmittance to laser light. The reflective layer 120 is made of a metal material having a high reflectance such as silver (Ag) or an alloy containing silver (Ag). In addition, in the long wavelength region, the constituent material of the reflective layer 120 may be gold (Au), copper (Cu), or an alloy containing these. The absorber layer 130 is made of a metal material having a high absorptivity such as chromium (Cr), molybdenum (Mo), titanium (Ti), or an alloy containing these. The absorption layer 130 may be comprised from carbon (C) or a black pigment.

The donor substrate 100 is formed on the red transfer layer forming region 100R1 corresponding to the region to be formed of the red organic light emitting element 10R on the substrate 11 when viewed from the surface side of the substrate 110. The reflective layer 120 and other regions have an absorbing layer 130. As a result, in the donor substrate 100, the red transfer layer can be selectively formed only on the reflective layer 120.

In addition, the donor substrate 100 has a reflection layer 120 and other portions in the green transfer layer non-transfer region (hereinafter, simply referred to as "non-transfer region") 100NP as viewed from the back side of the substrate 110. The region has an absorbing layer 130. As a result, in the donor substrate 100, the green transfer layer of the non-transfer region 100NP can be left on the substrate 110 without being transferred to the substrate 11. This non-transfer region 100NP corresponds to the formation scheduled region 10B1 of the blue organic light emitting element 10B on the substrate 11.

The absorption layer 130 and the reflection layer 120 are formed in the red transfer layer formation plan area | region 100R1 sequentially from the base 110 side. By forming the absorbing layer 130 between the reflective layer 120 and the substrate 110 in this manner, the red transfer layer can be transferred onto the substrate 11 by irradiating laser light from the back surface side of the substrate 110.

In addition, the laminated structure of the reflecting layer 120 and the absorbing layer 130 on the base | substrate 110 is not limited to what is shown in FIG. For example, although FIG. 4 shows the structure which provided the absorbing layer 130 and the reflective layer 120 in the whole surface side surface of the base 110, as shown in FIG. 5, the surface of the base 110 is shown. The reflective layer 120 and partially the absorber layer 130 may be provided on the entire side surface.

(Transfer layer forming step)

With respect to the donor substrate 100, first, as shown in FIG. 6A, the red transfer layer containing the above-mentioned red light-emitting material on the entire surface side of the base 110, for example, by vacuum deposition. 200R is formed (step S201).

Subsequently, as shown in FIG. 6 (B), in the vacuum, the transparent substrate 300 for removing matters is brought close to or in close contact with the donor substrate 100, and the surface of the substrate 110 is passed through the transparent substrate 300. The laser light LB1 is irradiated from the side. Since the laser light LB1 is photothermally converted in the absorbing layer 130, the red transfer layer 200R in the region where the absorbing layer 130 is formed is selectively removed when viewed from the surface side of the substrate 110 (step S202). . As a result, the red transfer layer 200R is formed only in the red transfer layer forming region 100R1. At this time, since the reflective layer 120 is provided in the red transfer layer forming region 100R1, the complicated process of forming the spot shape of the laser light and selectively irradiating only a predetermined region as in the prior art is unnecessary, and thus the laser light LB1 is not formed. Without irradiating the entire surface, only the red transfer layer 200R on the reflective layer 120 may be left in an unremoved state. As the laser light LB1, for example, semiconductor laser light having a wavelength of 80 Onm is used, and as irradiation conditions, for example, it can be 0.3 mW / µm ² and a scanning speed of 50 mm / s.

Subsequently, as shown in FIG. 7, the green transfer layer 200G containing the above-mentioned green light emitting material is formed on the entire surface side of the base 110 by, for example, vacuum deposition (step S203). ). As described above, the donor substrate 100 having the red transfer layer 200R and the green transfer layer 200G formed on the entire surface side is formed on a part of the surface side of the base 110.

(Collective transfer process)

Subsequently, as shown in FIG. 8, the donor substrate 100 and the substrate 11 are disposed to face each other, and the red transfer layer 200R and the laser light LB2 are irradiated from the back surface side of the base 110. In the green transfer layer 200G, portions other than the non-transfer region 100NP are collectively transferred to the substrate 11 (step S300). As a result, as shown in FIG. 9, the mixed layer 14RC is formed in the region 10R1 to be formed of the red organic light emitting device 10R, and green is formed in the region 10G1 to be formed of the green organic light emitting device 10G. Monochromatic layer 14GC is formed. At this time, since the reflective layer 120 is formed in the non-transfer region 100NP, a complicated process of forming the spot shape of the laser light and selectively irradiating the predetermined region as in the prior art is unnecessary, and the whole without forming the laser light LB2 is required. While irradiating the surface, only the green transfer layer 200G of the non-transfer region 100NP can be left untransferred. As the laser light LB2, for example, semiconductor laser light having a wavelength of 80 Onm is used, and as irradiation conditions, for example, 0.3 mW / µm ² and a scanning speed of 50 mm / s can be used.

After the batch transfer process is performed, the donor substrate 100 is again subjected to the above-described transfer layer forming steps (steps S201, S202, S203) in order to re-use the red transfer layer 200R and the green transfer layer 200G. It forms, and performs a batch transfer process with respect to the other board | substrate 11. 10 shows the production and regeneration process of such donor substrate 100. For the donor substrate 100 in the unused state shown in FIG. 10 (A), as shown in FIG. 10 (B), the red transfer layer 200R is formed on the entire surface side of the substrate 110 (step) S201), after selectively removing the red transfer layer 200R by irradiation of the laser light LB1 as shown in FIG. 10 (C) (step S202), the substrate (as shown in FIG. 10 (D)). The green transfer layer 200G is formed on the entire surface side of the surface 110 (step S203). Subsequently, a batch transfer process is performed as shown in Fig. 10E (step S300). At this time, the green transfer layer 200G remains in the non-transfer region 100NP of the donor substrate 100. Subsequently, as shown in Fig. 10F, the red transfer layer 200R is formed on the surface side of the substrate 110 while the green transfer layer 200G remains in the non-transfer region 100NP ( When the laser beam LB1 is irradiated as shown in step S201 and FIG. 10C, the red transfer layer 200R is selectively removed and the green transfer layer 200G remaining in the non-transfer region 100NP. ) Can also be removed (step S202). Thereafter, as shown in Fig. 10D, a green transfer layer 200G is formed on the entire surface side of the base 110 (step S203). In this way, the closed loop of the process shown to FIG. 10 (C)-FIG. 10 (F) can be comprised, and the process and apparatus for cleaning and reusing the donor substrate 100 after batch transfer are no longer needed, and a donor The substrate can be used only once and can be used repeatedly without being discarded.

(Blue Monochromatic Layer Forming Process)

On the other hand, with respect to the substrate 11 after the batch transfer process, as illustrated in FIG. 11, for example, the blue monochromatic layer 14D including the blue light emitting material described above is entirely formed by vapor deposition (step). S401). As a result, it is not necessary to perform three transfers in the same manner as the number of emission colors as in the prior art, and the number of transfers can be reduced to one.

After the blue monochromatic layer 14D, for example, the electron transport layer 14E and the second electrode 15 are also entirely formed by vapor deposition (step S402). In this way, the red organic light emitting element 10R, the green organic light emitting element 10G, and the blue organic light emitting element 10B are formed.

After the red organic light emitting element 1OR, the green organic light emitting element 10G and the blue organic light emitting element 1OB are formed, a protective film 16 made of the above-described materials is formed on them (step S403). The method of forming the protective film 16 is preferably a film forming method in which the energy of the film-forming particles is small so as not to affect the base, for example, a vapor deposition method or a CVD method. Moreover, it is preferable to perform the protective film 16 continuously with formation of the 2nd electrode 15, without exposing the 2nd electrode 15 to air | atmosphere. This is because the red organic layer 14R, the green organic layer 14G, and the blue organic layer 14B can be suppressed from being deteriorated by moisture or oxygen in the air. In addition, in order to prevent the fall of the luminance by the deterioration of the red organic layer 14R, the green organic layer 14G, and the blue organic layer 14B, the film formation temperature of the protective film 16 is set to room temperature, and the protective film 16 In order to prevent peeling off, it is preferable to form the film under conditions in which the stress of the film is minimized.

Thereafter, an adhesive layer 20 is formed on the protective film 16, and the sealing substrate 30 is pasted with the adhesive layer 20 therebetween (step S404). As described above, the display device shown in FIG. 1 is completed.

FIG. 12 schematically shows an example of a manufacturing system for a display device by the manufacturing method shown in FIG. 2. This manufacturing system 400 is a hole injection layer which forms the hole injection layer 14A1 and the hole transport layer 14A2 in the board | substrate 11 in which the 1st electrode 12 and the insulating film 13 were formed, for example. The blue monochromatic layer and electron which form the hole transport layer formation part 410, the batch transfer part 420 which perform a batch transfer process, and the blue monochromatic layer 14D, the electron carrying layer 14E, and the 2nd electrode 15 The transport layer and the second electrode forming portion 430 and the protective film forming portion 440 for forming the protective film 16 are arranged in a line shape. The collective transfer part 420 is connected to the transfer layer forming part 450 which performs the above-mentioned transfer layer forming process. The transfer layer forming unit 450 includes a red transfer layer forming unit 451 that forms the red transfer layer 200R on the entire surface side of the base 110, and laser light LB1 from the surface side of the base 110. ), The transfer layer selective removal unit 452 for selectively removing the red transfer layer 200R, and the green transfer layer forming unit forming the green transfer layer 200G on the entire surface side of the substrate 110 ( 453 is arranged in a line shape. In addition, arrangement | positioning of each part is not necessarily limited to a linear form, It may be other arrangements, such as radial.

In this display device, a predetermined voltage is applied between the first electrode 12 and the second electrode 15 so that a current is injected into the mixed layer 14RC, the green monochrome layer 14GC, and the blue monochrome layer 14D. And holes and electrons recombine to emit light. This light passes through the second electrode 15, the protective film 16 and the sealing substrate 30 and is extracted. At this time, in the red organic light emitting element 10R, the red organic layer 14R has the mixed layer 14CR including the red light emitting material and the green light emitting material, and the blue monochromatic layer 14D including the blue light emitting material, but has the most energy. The energy shifts to the low red level, and the red light emission becomes dominant. In the green organic light emitting element 10G, the green organic layer 14G has a green monochromatic layer 14GC containing a green light emitting material and a blue monochromatic layer 14D containing a blue light emitting material, but has a lower energy level. Energy shifts to green and green luminescence dominates. In the blue light emitting element 10B, since the blue organic layer 14B has only the blue monochromatic layer 14D containing the blue light emitting material, blue light emission occurs.

As described above, in the present embodiment, since the red organic layer 14R has the mixed layer 14RC including the red light emitting material and the green light emitting material, the red transfer layer 200R is separated from the donor substrate 100 by the thermal transfer method. The mixed layer 14RC may be formed by a simple process of collectively transferring the green transfer layer 200G.

In addition, the donor substrate 100 is provided with the reflective layer 120 in the red transfer layer formation plan area | region 100R1 when it sees from the surface side of the base | substrate 110, Therefore, the red transfer layer in the whole surface side of the base | substrate 100 is provided. After the 200R is formed, the donor substrate 100 and the substrate 11 are disposed to face each other, and the red transfer layer 200R is selectively removed by irradiating the laser light LB1 from the surface side of the substrate 110, The red transfer layer 200R may remain only on the reflective layer 120.

In addition, since the reflecting layer 120 was provided in the non-transfer area | region 100NP in this donor substrate 100 from the back surface side of the base | substrate 110, the green transfer layer 200G on the whole surface side of the base | substrate 110 is carried out. ), And then the donor substrate 100 and the substrate 11 are disposed to face each other, and the laser light LB2 is irradiated from the rear surface side of the substrate 110 to make the green transfer layer 200G other than the non-transfer region 100NP. The portion of can be selectively transferred onto the substrate 11 and left on the substrate 110 without transferring the portion of the non-transfer region 100NP.

In addition, according to the manufacturing method or the manufacturing system of the display device of the present embodiment, the red transfer layer 200R and the green transfer layer 200G are formed on the donor substrate 100 so as to be collectively transferred to the substrate 11. The transfer for forming the red organic light emitting element 10R and the green organic light emitting element 10G can be performed once, and can be manufactured by a simple process.

In addition, complicated processes such as fitting, separating, and laser irradiation of the donor substrate 100 and the substrate 11 are reduced, and the device cost can be reduced by simplifying the device configuration, and the productivity can be improved by shortening the tact time. have. In addition, since the number of transfers can be reduced, defects due to transfer can be reduced, and the running cost can be reduced since the donor substrate 100 for each color is not required.

In addition, the red transfer layer 200R and the green transfer layer 200G are reformed by performing the transfer layer forming process on the donor substrate 100 after the batch transfer process is performed, and the other substrate 11 is collectively collected. When the transfer process is performed, not only a process or an apparatus for cleaning and reusing the donor substrate 100 after the batch transfer is necessary, but also the donor substrate 100 can be used only once and repeatedly used without discarding. Therefore, the device configuration can be simplified, and the device cost and the cost of the donor substrate can be further lowered.

After the batch transfer process, the blue monochromatic layer 14D common to the red organic light emitting element 10R, the green organic light emitting element 10G, and the blue organic light emitting element 10B is formed by vapor deposition or the like. Similarly, it is not necessary to perform three transfers in the same manner as the number of emission colors, and the number of transfers can be reduced to one.

(Variation example)

Fig. 13 shows the configuration of a donor substrate according to a modification of the present invention in an unused state. In the donor substrate 100, the non-transfer region 100NP corresponds to the boundary region between the red organic light emitting element 10R and the green organic light emitting element 10G in the substrate 11. Thereby, in this donor substrate 100, in the batch transfer process, the boundary of the mixed layer 14RC and the green monochromatic layer 14GC can be formed clearly, and mixing color can be suppressed reliably. Meanwhile, in FIG. 13, in the donor substrate 100 in which the absorption layer 130 is formed on the entire surface side of the substrate 110 as shown in FIG. 4, and the reflective layer 120 is partially formed, the boundary region is provided. Correspondingly, the reflective layer 120 is additionally formed between the absorber layer 130 and the base 110.

In addition, in the laminated structure of the reflection layer 120 and the absorption layer 130 for providing the non-transfer region NP in the boundary region, the reflection layer 120 is formed corresponding to the boundary region when viewed from the back side of the base 110. As long as it is, it is not limited to what is shown in FIG. 13, Another laminated structure may be sufficient. For example, as shown in FIG. 14, a portion of the absorber layer 130 may be removed corresponding to the boundary region 10M, and the region may be covered with the reflective layer 130. In addition, in the donor substrate 100 in which the reflective layer 130 is formed on the entire surface side of the substrate 110 as shown in FIG. 5, and the absorption layer 130 is partially provided, as shown in FIG. 15, A portion of the absorber layer 130 between the reflective layer 120 and the substrate 110 may be removed corresponding to the boundary region.

As mentioned above, although an Example was given and this invention was demonstrated, this invention is not limited to the said Example, A various deformation | transformation is possible. For example, in the said embodiment, although the case where laser beam was irradiated in the transfer layer formation process and the batch transfer process was demonstrated, other radiation, such as a lamp, can also be irradiated.

In addition, in the said Example, although the case where the reflective layer 120 and the absorption layer 130 were formed in the side which opposes the board | substrate 11 of the base | substrate 110 was demonstrated, the reflective layer 120 and the absorption layer 130 were mentioned above. As long as the conditions of one lamination structure are satisfied, it may be formed on the opposite side to the substrate 11 of the base 110. However, it is preferable to form the base 110 on the side opposite to the substrate 11 because the formation of the red transfer layer 200R and the green transfer layer 200G and the accuracy of the transfer position can be easily increased.

In addition, for example, the material and thickness of each layer described in the above embodiments, the film forming method, the film forming condition and the irradiation conditions of the laser lights LB1 and LB2 are not limited, and may be other materials and thicknesses. Or other film forming methods, film forming conditions and irradiation conditions. For example, the first electrode 12 may be made of IZO (indium zinc composite oxide) in addition to ITO. Moreover, you may comprise the 1st electrode 12 with a reflective electrode. In that case, it is preferable that the first electrode 12 have a thickness of, for example, 100 nm or more and 1000 nm or less, and have a reflectance as high as possible in terms of increasing the luminous efficiency. For example, the material constituting the first electrode 12 may be chromium (Cr), gold (Au), platinum (Pt), nickel (Ni), copper (Cu), tungsten (W), or silver (Ag). Single substance or alloy of metal elements, such as these, is mentioned. In addition, for example, the first electrode 12 may have a dielectric multilayer film.

In addition, for example, in the said embodiment, the 1st electrode 12, the organic layer 14, and the 2nd electrode 15 were laminated | stacked in order from the board | substrate 11 side on the board | substrate 11, and the sealing container Although the case where light was taken out from the board 30 side was demonstrated, the 2nd electrode 15, the organic layer 14, and the 1st electrode 12 were placed on the board | substrate 11 on the board | substrate 11 in reverse order. It can also be laminated in order from the 11) side, and light may be taken out from the board | substrate 11 side.

For example, in the said embodiment, although the case where the 1st electrode 12 was made into the anode and the 2nd electrode 15 was made into the cathode was demonstrated, the anode and the cathode were reversed, and the 1st electrode 12 was made into The cathode and the second electrode 15 can also be used as the anode. In addition, the first electrode 12 is a cathode and the second electrode 15 is an anode, and the second electrode 15, the organic layer 14, and the first electrode 12 are formed on the substrate 11. It can also be laminated in order from the board | substrate 11 side, and can extract light from the board | substrate 11 side.

In addition, although the structure of the red organic light emitting element 1OR, the green organic light emitting element 10G, and the blue organic light emitting element 10B has been described in detail in the above embodiment, it is not necessary to provide all the layers, and the other layers. It may further be provided. For example, an oxide mixed film of chromium (III) oxide (Cr ₂ O ₃ ), ITO (Indium-Tin Oxide: Indium, and Tin) between the first electrode 12 and the organic layer 14. Or a thin film layer for hole injection, which is composed of a layer or the like.

In addition, in the said Example, the 2nd electrode 15 is comprised from the semi-permeable electrode, and the light which generate | occur | produced in the mixed layer 14RC, the green monochromatic layer 14GC, and the blue monochromatic layer 14D from the 2nd electrode 15 side. Although the case of drawing out was demonstrated, the generated light can also be taken out from the 1st electrode 12 side. In this case, it is preferable that the second electrode 15 have as high a reflectance as possible in order to increase the luminous efficiency.

Claims (16)

A red organic light emitting element, comprising: a red organic layer having a mixed layer comprising a first electrode, a red light emitting material, and a green light emitting material; and a second electrode in a substrate. A substrate comprising a red organic light emitting element having a first electrode, a red organic layer having a mixed layer containing a red light emitting material and a green light emitting material, and a second organic light emitting element in sequence. The method of claim 2, And a green organic light emitting element having the first electrode, a green organic layer having a green monochromatic layer including a green light emitting material, and a green organic light emitting element having the second electrode. The method of claim 3, And a blue organic light emitting element having the first electrode, a blue organic layer having a blue monochromatic layer including a blue light emitting material, and a second organic electrode, and the red organic layer being the second electrode of the mixed layer. And a blue monochrome layer on the side, and the green organic layer has the blue monochrome layer on the second electrode side of the green monochrome layer. As a donor substrate for transferring a transfer layer to another substrate by selectively forming a transfer layer on a part of the surface side of the substrate and irradiating radiation from the back side of the substrate, A donor substrate, as viewed from the surface side of the substrate, wherein a reflection layer is formed in a region to be formed of the transfer layer, and an absorber layer is formed in a region other than the region to be formed of the transfer layer. The method of claim 5, A donor substrate, wherein the absorption layer and the reflection layer are formed in the transfer layer formation scheduled region sequentially from the base side. A transfer method for transferring a transfer layer to another substrate from a donor substrate on which a transfer layer is selectively formed on a part of the surface side of the substrate, As the donor substrate, as seen from the surface side of the base, a reflective layer is formed in a region to be formed of the transfer layer, and an absorber layer is formed in a region other than the region to be formed of the transfer layer, Forming a transfer layer on the entire surface side of the substrate; Selectively removing the transfer layer in the region where the absorption layer is formed when viewed from the surface side of the substrate by irradiating radiation from the surface side of the substrate, and Transferring the transfer layer on the reflective layer to the other substrate by arranging the donor substrate and the other substrate so as to irradiate radiation from the back side of the base; Transfer method comprising a. As a donor substrate which forms a transfer layer in the surface side of a base | substrate, and selectively transfers a part of said transfer layer to another board | substrate by irradiating a radiation from the back surface side of the said base body, A donor substrate, as viewed from the back side of the substrate, wherein a reflection layer is formed in a non-transfer region where the transfer layer is not transferred to the other substrate, and an absorption layer is formed in regions other than the non-transfer region. A transfer method for selectively transferring a portion of the transfer layer to another substrate from a donor substrate having a transfer layer formed on a substrate, As the donor substrate, as seen from the back side of the substrate, a reflective layer is formed in the non-transfer region, which does not transfer the transfer layer to the other substrate, and an absorber layer is formed in the regions other than the non-transfer region, Forming a transfer layer on the entire surface side of the substrate, and Selectively placing the donor substrate and the other substrate so as to irradiate radiation from the back side of the substrate to selectively transfer portions of the transfer layer other than the non-transfer region to the other substrate; Transfer method comprising a. A method of manufacturing a display device including a red organic light emitting device, a green organic light emitting device, and a blue organic light emitting device on a substrate, As seen from the surface side of the substrate, the substrate has a reflective layer in the red transfer layer formation scheduled region corresponding to the region where the red organic light emitting element is to be formed in the substrate, and an absorbing layer in a region other than the red transfer layer formation scheduled region. As seen from the back side of the substrate, a donor substrate having a reflective layer for the green transfer layer non-transfer region and an absorbing layer for regions other than the green transfer layer non-transfer region is used. By forming a red transfer layer containing a red light emitting material on the entire surface side of the substrate and irradiating radiation from the surface side of the substrate, the red transfer of the region where the absorption layer is formed when viewed from the surface side of the substrate A transfer layer forming step of selectively removing the layer, and then forming a green transfer layer comprising a green light emitting material on the entire surface side of the substrate; and The donor substrate and the substrate are disposed to face each other to irradiate radiation from the back surface side of the substrate, thereby collectively transferring a portion of the red transfer layer and the green transfer layer other than the green transfer layer non-transfer region to the substrate. step Method of manufacturing a display device comprising a. The method of claim 10, And the green transfer layer non-transfer region corresponds to a region to be formed of a blue organic light emitting element in the substrate. The method of claim 10, And the green transfer layer non-transfer region corresponds to a boundary region of a red organic light emitting element and a green organic light emitting element on the substrate. The method of claim 10, And re-forming the red transfer layer and the green transfer layer by performing the transfer layer forming step again after the batch transfer step, and performing the batch transfer step on another substrate. The method of claim 10, A blue monochromatic layer containing a blue light emitting material is formed in a region to be formed of the red organic light emitting element, the green organic light emitting element, and the blue organic light emitting element on the substrate after performing the batch transfer by the batch transfer step. And a blue monochromatic layer forming step. A manufacturing system of a display device having a red organic light emitting device, a green organic light emitting device, and a blue organic light emitting device on a substrate, As seen from the surface side of the substrate, the substrate has a reflective layer in the red transfer layer formation scheduled region corresponding to the region where the red organic light emitting element is to be formed in the substrate, and an absorbing layer in a region other than the red transfer layer formation scheduled region. As seen from the back side of the substrate, a donor substrate having a reflective layer for the green transfer layer non-transfer region and an absorbing layer for regions other than the green transfer layer non-transfer region is used. The red transfer layer forming part which forms the red transfer layer containing a red luminescent material on the surface side whole surface of the said base material, and the absorption layer is formed by irradiating radiation from the surface side of the said base material, and it is seen from the surface side of the said base material. A transfer layer forming portion including a transfer layer selective removing portion selectively removing the red transfer layer in the region, and a green transfer layer forming portion forming a green transfer layer including a green light emitting material on the entire surface side of the substrate; And The donor substrate and the substrate are disposed to face each other to irradiate radiation from the back surface side of the substrate, thereby collectively transferring a portion of the red transfer layer and the green transfer layer other than the green transfer layer non-transfer region to the substrate. part A manufacturing system of a display device comprising the. The method of claim 15, A blue monochromatic layer containing a blue light emitting material is formed in a region to be formed of the red organic light emitting element, the green organic light emitting element, and the blue organic light emitting element on the substrate after performing the batch transfer by the batch transfer unit. A blue monochromatic layer forming unit is provided.

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