JP2008270271A - Donor substrate and method of fabricating the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a donor substrate which can enhance the fabrication yield of organic light emitting element, and to provide a method of fabricating the same. <P>SOLUTION: The donor substrate 2 has a reflective layer 32A patterned in a region 40B corresponding to blue, a light and heat conversion layer 34 formed on the entire surface of a supporting substrate 30 to cover the reflective layer 32A, and a reflective layer 32B patterned in a region 40R corresponding to red sequentially from the surface of the supporting substrate. When laser light L is irradiated from the surface of the supporting substrate 30, the laser light L is reflected on the reflective layer 32B in the region 40R corresponding to red and light and heat conversion is carried out by the light and heat conversion layer 34 in the region other than the region 40R corresponding to red. When the laser light L is irradiated from the backside of the supporting substrate 30, the laser light L is reflected on the reflective layer 32B in the region 40B corresponding to blue and light and heat conversion is carried out by the light and heat conversion layer 34 in the region other than the region 40B corresponding to blue. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a donor substrate used for manufacturing, for example, an organic light emitting device and a method for manufacturing the donor substrate.

In the manufacturing process of an organic light emitting device, a technique for pattern transfer of a light emitting layer by irradiating a donor substrate on which a transfer layer is formed with laser light is disclosed (for example, refer to Patent Documents 1 and 2). In such a conventional transfer method, in order to form organic light emitting elements of three colors of red, green, and blue, it is necessary to transfer three times, which is generally the number of emission colors. Alternatively, a method is disclosed in which the blue light-emitting layer is formed as a common layer among the three color elements to perform the transfer twice (for example, see Patent Document 3).
JP 9-167684 A JP 2002-216957 A JP 2005-235742 A

  However, in the method of the above-mentioned patent document, the number of times of transfer is as many as 3, and the spot shape of the laser beam has to be formed and only a predetermined area must be selectively irradiated, so the manufacturing process becomes complicated and the yield decreases. There was a problem of doing.

  The present invention has been made in view of such problems, and an object of the present invention is to provide a donor substrate and a method for manufacturing the donor substrate that can improve the yield, for example, in the manufacture of an organic light emitting device.

  The donor substrate according to the present invention has a transfer layer formed on the surface side of a light-transmitting support substrate, and is used for transferring the transfer layer to a transfer medium by irradiating the support substrate with light. A light-to-heat conversion layer for converting light energy into heat energy is provided between the layers. The photothermal conversion layer has a first region having a first light reflection layer on the support substrate side, and a second region having a second light reflection layer on the transfer layer side of the photothermal conversion layer.

  In the donor substrate according to the present invention, a photothermal conversion layer is provided between the support substrate and the transfer layer, the first region having the first light reflection layer on the support substrate side of the photothermal conversion layer, and the photothermal conversion layer By having the second region having the second light reflection layer on the transfer layer side, the second light reflection layer is formed when light is irradiated from the surface side of the support substrate. While the irradiation light is reflected in the region, the irradiation light is photothermally converted in the photothermal conversion layer in the region where the second light reflection layer is not formed. On the other hand, when light is irradiated from the back surface side of the support substrate, the irradiation light is reflected in the first region where the first light reflection layer is formed, but the first light reflection layer is not formed. In the region, the irradiation light is photothermally converted in the photothermal conversion layer. Therefore, by irradiating light from each direction of the front surface side or the back surface side of the support substrate, a transfer layer in a selective region among the transfer layers formed on the front surface side of the support substrate is transferred.

  In particular, the transfer layer is provided in the second region and includes a red transfer layer including a red organic light emitting material and a green transfer layer including a green organic light emitting material provided to cover the red transfer layer. Thus, when light is irradiated from the back side of the support substrate, the red transfer layer and the green transfer layer formed in the second region are transferred, and at the same time, to either the first region or the second region The green transfer layer formed in the region not including the film is transferred.

  In addition, since the first adhesion layer is provided between the support substrate and the first light reflection layer, the adhesion of the first light reflection layer to the support substrate is increased, and the first light reflection layer is It becomes difficult to peel off from the support substrate.

  In the method for producing a donor substrate according to the present invention, a transfer layer is formed on the surface side of a light-transmitting support substrate, and is used for transferring the transfer layer to a transfer object by light irradiation to the support substrate. Forming a first light reflecting layer in a first region on the surface side of the substrate, and covering the first light reflecting layer with a light-to-heat conversion layer for converting light energy into heat energy on the surface side of the support substrate And a step of forming a second light reflecting layer for reflecting light to the second region on the surface side of the support substrate after forming the photothermal conversion layer.

  According to the donor substrate and the donor substrate manufacturing method of the present invention, the photothermal conversion layer is provided between the support substrate of the donor substrate and the transfer layer, and the first light reflection layer is provided on the support substrate side of the photothermal conversion layer. Since the first region has the second region having the second light reflecting layer on the transfer layer side of the photothermal conversion layer, the transfer layer is formed on the surface side of the support substrate, and the support substrate By irradiating light from the respective directions of the front surface side or the back surface side, it is possible to transfer the transfer layer in a selective region among the transfer layers formed on the front surface side of the support substrate. This eliminates the need to form a light spot shape so that only a predetermined region is irradiated with light, and it is possible to transfer a transfer layer in a desired region while irradiating the entire surface of the donor substrate. Thus, the manufacturing yield can be improved.

  In particular, the transfer layer is provided in the second region and includes a red transfer layer including a red organic light emitting material and a green transfer layer including a green organic light emitting material provided to cover the red transfer layer. Thus, when light is irradiated from the back side of the support substrate, the red transfer layer and the green transfer layer formed in the second region, and the region not included in any of the first region and the second region The green transfer layer formed on the substrate can be transferred at once.

  Further, if the first light reflection layer is formed on the support substrate via the first adhesion layer that improves the adhesion of the first light reflection layer to the support substrate, the first light reflection layer becomes the support substrate. It is difficult to peel off from the film, which is advantageous for improving the yield.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  FIG. 1 shows a cross-sectional structure of a display device 1 according to an embodiment of the present invention. The display device 1 is used as a thin organic light emitting color display device or the like. For example, a red organic light emitting element 10R that generates red light and a green light that generates green light on a driving substrate 10. The organic light emitting element 10G and the blue organic light emitting element 10B that generates blue light are repeatedly arranged in order, and are formed in a matrix as a whole. The red organic light emitting element 10R, the green organic light emitting element 10G, and the blue organic light emitting element 10B are covered with a protective film 18 and sealed with a sealing substrate 20 with an adhesive layer 19 interposed therebetween. In this display device 1, the combination of the adjacent red organic light emitting element 10 </ b> R, green organic light emitting element 10 </ b> G, and blue organic light emitting element 10 </ b> B constitutes one pixel, and light of three colors LR and LG from the upper surface of the sealing substrate 20. , LB is a top emission type display device.

  The drive substrate 10 includes, for example, a switching element such as a TFT (Thin Film Transistor) element, a wiring such as a gate line and a source line connected to the switching element, and a planarization insulating layer (flattening insulating layer ( (None of which are shown) and the like are laminated. Note that a contact hole is provided in the planarization insulating layer and is electrically connected to the TFT element and the red organic light emitting element 10R, the green organic light emitting element 10G, and the blue organic light emitting element 10B on the driving substrate 10.

  The red organic light-emitting element 10R includes, for example, the first electrode 11, the insulating film 12, the hole injection layer 13, the hole transport layer 14, the red mixed layer 15R, and the blue common from the driving substrate 10 side. The layer 15B, the electron injection layer 16, and the second electrode 17 are sequentially stacked. The green organic light emitting element 10G includes a first electrode 11, an insulating film 12, a hole injection layer 13, a hole transport layer 14, a green monochromatic layer 15G, and a blue common layer 15B from the driving substrate 10 side. Then, the electron injection layer 16 and the second electrode 17 are sequentially laminated. The blue organic light emitting device 10B includes a first electrode 11, an insulating film 12, a hole injection layer 13, a hole transport layer 14, a blue common layer 15B, and an electron injection layer 16 from the drive substrate 10 side. And the second electrode 17 are sequentially stacked.

  The first electrode 11 functions as, for example, an anode electrode and is made of, for example, a metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), silver (Ag), or an alloy of these metals. It may be a layered structure or a laminated structure. In the case of the bottom emission type, for example, a transparent electrode such as ITO or IZO (indium zinc oxide) may be used. The first electrode 11 is formed with a thickness of, for example, 50 nm to 1000 nm.

  The insulating film 12 ensures electrical insulation between the red organic light emitting element 10R, the green organic light emitting element 10G, and the blue organic light emitting element 10B. For example, the insulating film 12 is photosensitive such as polybenzoxazole, polyimide, and acrylic. It is comprised with resin and thickness is 2.0 micrometers, for example. The insulating film 12 is provided with an opening corresponding to each light emitting region.

  The hole injection layer 13, the hole transport layer 14, the blue common layer 15B, and the electron injection layer 16 are layers common to the red organic light emitting element 10R, the green organic light emitting element 10G, and the blue organic light emitting element 10B. Note that the hole injection layer 14A1, the hole transport layer 14A2, and the electron transport layer 14E may be provided as necessary, and may have different configurations depending on the emission color.

  The hole injection layer 13 is a buffer layer for improving hole injection efficiency and preventing leakage. The hole injection layer 13 has, for example, a thickness of 5 nm to 300 nm, for example, 25 nm, and 4,4 ′, 4 ″ -tris (3-methylphenylphenylamino) triphenylamine (m-MTDATA) or 4, It is composed of 4 ′, 4 ″ -tris (2-naphthylphenylamino) triphenylamine (2-TNATA).

  The hole transport layer 14 is for increasing the efficiency of hole transport to the red mixed layer 15R, the green monochrome layer 15G, and the blue common layer 15B. The hole transport layer 14A2 has, for example, a thickness of 5 nm to 300 nm, for example, 30 nm, and is composed of 4,4′-bis (N-1-naphthyl-N-phenylamino) biphenyl (α-NPD). Yes.

  The red mixed layer 15R, the green monochrome layer 15G, and the blue common layer 15B function as a light emitting layer that generates light by recombination of electrons and holes when an electric field is applied.

  The red mixed layer 15R includes a red light emitting material, a green light emitting material, and at least one of a hole transporting material, an electron transporting material, and both charge transporting materials, and has a thickness of, for example, 10 to 100 nm. For example, it is 45 nm. The red light emitting material may be fluorescent or phosphorescent. For example, 2,6-bis [(4′-methoxydiphenylamino) styryl] -1 is added to ADN (di (2-naphthyl) anthracene). , 5-dicyanonaphthalene (BSN) mixed with 30% by weight. The green light emitting material may be fluorescent or phosphorescent, and is composed of, for example, ADN mixed with 5% by weight of Coumarin 6.

  The green monochromatic layer 15G includes a green light emitting material and at least one of a hole transporting material, an electron transporting material, and a charge transporting material, and has a thickness of 10 nm to 100 nm, for example, about 15 nm. It is. As the green light emitting material, the same materials as the above materials can be used.

  The blue common layer 15B includes a blue light emitting material and at least one of a hole transporting material, an electron transporting material, and both charge transporting materials, and has a thickness of 10 nm to 100 nm, for example, 15 nm. The blue light-emitting material may be fluorescent or phosphorescent, and 4,4′-bis [2- {4- (N, N-diphenylamino) phenyl} vinyl] biphenyl (DPAVBi) is added to ADN. It is composed of a mixture of 2.5% by weight.

The electron injection layer 16 is for increasing electron injection efficiency, and is made of, for example, LiF, Li ₂ O, or the like, and has a thickness of, for example, 3.0 nm or less, for example, 0.3 nm. It should be noted that an electron transport layer that increases electron transport efficiency may be provided between the electron injection layer 16 and the blue common layer 15B.

  The second electrode 17 functions as, for example, a cathode electrode, and is configured by, for example, a transparent electrode or a semi-transmissive electrode, and has a thickness of, for example, 5 nm to 50 nm. In the case of a top emission type, the second electrode is preferably made of a material having a low work function so that electrons can be efficiently injected into the organic layer. For example, magnesium (Mg), It is composed of silver and aluminum (Al). Moreover, it is preferable that such a 2nd electrode 17 is formed by the method with small energy of the film-forming particle | grains like a vapor deposition method.

The protective film 18 is for preventing moisture, oxygen, and the like from entering the red organic light emitting element 10R, the green organic light emitting element 10G, and the blue organic light emitting element 10B. It is composed of a thick film. Further, the protective film 18 is made of a material having a high transmittance with respect to light generated in the mixed red mixed layer 15R, the green monochrome layer 15G, and the blue common layer 15B, and having a transmittance of 80% or more, for example. Such a protective film 18 has a thickness of, for example, about 2 μm to 3 μm and is made of an inorganic amorphous insulating material. Specifically, amorphous silicon (α-Si), amorphous silicon carbide (α-SiC), amorphous silicon nitride (α-Si _1-x N _x ), and amorphous carbon (α-C) are preferable. Since these inorganic amorphous insulating materials do not constitute grains, the water permeability is low and a good protective film is obtained. The protective film 18 may be made of a transparent conductive material such as ITO or IXO.

  The adhesive layer 20 is made of, for example, a thermosetting resin or an ultraviolet curable resin.

  The sealing substrate 30 is made of a material such as glass that is transparent to light generated in the red mixed layer 15R, the green monochrome layer 15G, and the blue common layer 15B.

  Next, in the manufacturing method of the display device 1 having the above-described configuration, a transfer process using a donor substrate will be described with reference to FIGS.

  FIG. 2 shows a cross-sectional configuration of the donor substrate 2 used for manufacturing the display device 1, and FIGS. 3 to 8 show a method for manufacturing the donor substrate 2 in the order of steps. 9 and 10 show the method of forming the element forming substrate 3 in the order of steps. 11 to 14 show the transfer method using the donor substrate 2 in the order of steps. However, the donor substrate 2 will be described with an example in which a transfer layer is formed on the donor substrate of the present invention.

  First, the configuration of the donor substrate 2 will be described. As shown in FIG. 2, the donor substrate 2 includes a support substrate 30, and on the surface side of the support substrate 30, a reflection layer 32 </ b> A (first light reflection layer) and an antireflection layer 33 </ b> A (first light An antireflection layer), a photothermal conversion layer 34, an antireflection layer 33B (second light reflection prevention layer), a reflection layer 32B (second light reflection layer), a protective layer 35, and a red transfer layer 36R. The green transfer layer 36G is provided in this order. In particular, the reflective layer 32A and the reflective layer 32B are provided in selective regions that do not oppose each other, and are provided between the support substrate 30 and the reflective layer 32A, between the reflective layer 32A and the antireflection layer 33A, and between the antireflection layers. An adhesion layer 31A (first adhesion layer), an adhesion layer 31B (second adhesion layer), and an adhesion layer 31C (third adhesion layer) are provided between 33B and the reflective layer 32B, respectively. .

  In such a configuration, when viewed from the surface side of the support substrate 30, the region facing the reflective layer 32A is the blue corresponding region 40B (first region), and the region facing the reflective layer 32B is the red corresponding region 40R (second region). Region), the region that does not oppose any of the reflective layer 32A and the reflective layer 32B is a green corresponding region 40G, and the blue organic light emitting device 10B, the red organic light emitting device 10R, and the green organic light emitting device on the driving substrate 10, respectively. This corresponds to the element 10G.

  The support substrate 30 has a sufficient heat resistance and rigidity and is made of a material having high transparency to laser light, for example, a resin such as glass or acrylic.

  The adhesion layer 31A has adhesion of the reflection layer 32A to the support substrate 30, the adhesion layer 31B has adhesion of the reflection layer 32A to the antireflection layer 33B, and the adhesion layer 31C has adhesion of the reflection layer 32B to the reflection prevention layer 33B. , Each to enhance. These adhesion layers 31A, 31B, and 31C are made of a material having optical transparency such as ITO. The adhesion layer 31C is configured to be formed on the entire surface of the antireflection layer 33B. However, the present invention is not limited to this, and the pattern is formed only in the red corresponding region 40R as in the reflection layer 32B. Also good. In addition, the adhesion layer 31A, the reflective layer 32A, and the adhesion layer 31B are configured to be formed only in the blue corresponding region 40B by patterning, but the adhesion layer 31A is configured to be formed on the entire surface of the support substrate 30. May be.

  The reflective layers 32A and 32B are made of a highly reflective metal material such as silver (Ag), gold (Au), copper (Cu), aluminum (Al), or an alloy containing these, and has a thickness of, for example, 50 nm. ˜500 nm, for example 100 nm. The reflectance of the reflective layer 32A is preferably 90% or more.

  The antireflection layers 33A and 33B are made of a material having low reflectivity, for example, amorphous silicon (α-Si), and have a thickness of 34 nm to 35 nm, for example.

  The photothermal conversion layer 34 is made of a material that absorbs light energy and converts it into heat energy, for example, chromium (Cr), molybdenum (Mo), titanium (Ti), or an alloy containing these, and has a high absorption rate. Preferably it is comprised with molybdenum. The photothermal conversion layer 34 has a sufficient thickness that does not transmit light, for example, 100 nm.

The protective layer 35 is made of amorphous silicon such as SiN _x , for example, and prevents the photothermal conversion layer 34 from being oxidized and increases the absorptance of the photothermal conversion layer 34.

  The red transfer layer 36 </ b> R includes a red light emitting material and at least one of a hole transporting material, an electron transporting material, and a charge transporting material, and the red mixed layer of the red organic light emitting element 10 </ b> R described above. The layer 15R is formed. The red transfer layer 36R is provided in a red corresponding region 40R on the protective layer 35, that is, a region facing the reflective layer 32B, and has a thickness of, for example, 1 nm to 100 nm, for example, 30 nm.

  The green transfer layer 36G is provided on the entire surface of the protective film 35 so as to cover the red transfer layer 36R, and has a thickness of 5 nm to 70 nm, for example, 15 nm. Therefore, in the red corresponding area 40R, the red transfer layer 36R and the green transfer layer 36G are laminated, and in the green corresponding area 40G and the blue corresponding area 40B, the green transfer layer 36G is a single color layer.

  Next, a method for manufacturing the donor substrate 2 will be described with reference to FIGS.

  First, as shown in FIG. 3A, the adhesion layer 31-1, the reflection layer 32-1, and the adhesion layer 31-2 are formed in this order on the support substrate 30 by using, for example, a sputtering method. Subsequently, as shown in FIG. 3B, portions of the formed adhesion layer 31-1, the reflective layer 32-1, and the adhesion layer 31-2 other than the blue corresponding region 40B by, for example, patterning by photolithography. Remove. Thereby, the laminated structure of the adhesion layer 31A, the reflective layer 32A, and the adhesion layer 31B is formed only on the blue-corresponding region 40B on the surface of the support substrate 30.

  Subsequently, as shown in FIG. 4A, an antireflection layer 33A is formed on the entire surface of the support substrate 30 by, for example, CVD so as to cover the patterned adhesion layer 31A, reflection layer 32A, and adhesion layer 31B. It is formed by the (Chemical Vapor Deposition) method. Next, after the photothermal conversion layer 34 is formed on the entire surface with a sufficient thickness by, for example, sputtering, the antireflection layer 33B is formed by, for example, CVD. Thereafter, the adhesion layer 31C and the reflection layer 31-2 are formed in this order on the formed antireflection layer 33B by, for example, a sputtering method. Subsequently, as shown in FIG. 4B, portions of the formed reflective layer 31-2 other than the red corresponding region 40R are removed by, for example, patterning by photolithography. Thereby, the reflective layer 32 </ b> B is formed only in the red corresponding region 40 </ b> R on the surface side of the support substrate 30.

  Subsequently, as illustrated in FIG. 5, the protective layer 35 is formed on the adhesion layer 31 </ b> C so as to cover the reflective layer 32 </ b> B by, for example, a CVD method. However, the deposition temperature of the protective layer 35 and the above-described antireflection layers 33A and 33B is preferably 300 ° C. or lower. This is because if the film is formed at a temperature higher than 300 ° C., when silver or a silver alloy is used for the reflective layers 32A and 32B, silver may be altered and the reflectance may be lowered.

Subsequently, as shown in FIG. 6, a red transfer layer 36R-1 is formed on the entire surface of the protective layer 35 by, for example, vacuum deposition. Next, with the vacuum state maintained, as shown in FIG. 7, the counter substrate 100 side in the state where the counter substrate 100 made of glass or the like is brought close to or in close contact with the red transfer layer 36 </ b> R- 1. Then, the laser beam L is irradiated. As the laser light L, for example, a semiconductor laser light having a wavelength of 800 nm can be used. As irradiation conditions, for example, 0.3 mW / μm ² and a scanning speed of 50 mm / s can be used. Thus, the red transfer layer 36R is formed in the red corresponding region 40R as shown in FIG.

  Finally, the green transfer layer 36G is formed on the entire surface of the protective layer 35 so as to cover the red transfer layer 36R, for example, by vacuum deposition, whereby the donor substrate 2 shown in FIG. 2 can be obtained.

  Next, a method for forming the element forming substrate 3 will be described with reference to FIGS.

  First, as shown in FIG. 9A, the first electrode 11 is formed on the driving substrate 10 by, for example, a sputtering method, and then formed into a predetermined shape by etching, for example, after patterning by photolithography. Since the driving substrate 10 is provided with wirings such as TFT elements, gate lines, and source lines (not shown), a planarization insulating film for planarizing these is formed, and contact holes are formed in the planarization insulating film. The driving substrate 10 and the first electrode 11 are electrically connected.

  Subsequently, as shown in FIG. 9B, a photosensitive resin is applied to the entire surface of the driving substrate 10 by, for example, a spin coating method, and is applied to a portion corresponding to the first electrode 11 by, for example, a photolithography method. After forming into a shape having an opening, the insulating film 12 is formed by baking.

  Subsequently, as shown in FIG. 10, by sequentially forming the hole injection layer 13 and the hole transport layer 14 by, for example, vapor deposition so as to cover the formed first electrode 11 and insulating film 12, An element formation substrate 3 having a red element formation region 10R-1, a green element formation region 10G-1, and a blue element formation region 10B-1 is formed.

  Next, a transfer method using the donor substrate 2 will be described with reference to FIGS.

  As shown in FIG. 11, the surface side of the donor substrate 2 (the side on which the red transfer layer 36R and the green transfer layer 36G are formed) and the element formation region on the driving substrate 10 are arranged to face each other. The laser beam L is irradiated from the back side of the donor substrate 2. At this time, the red corresponding region 40R, the green corresponding region 40G, and the blue corresponding region 40B of the donor substrate 2 are respectively the red element forming region 10R-1, the green element forming region 10G-1, and the blue element forming of the element forming substrate 3. Positioning is performed so as to correspond to the region 10B-1. In this manner, the red transfer layer 36R and the green transfer layer 36G other than the blue corresponding region 40B are collectively transferred to the element forming substrate 3. Thereby, as shown in FIG. 12, the red mixed layer 15R is formed in the red element forming region 10R-1, and at the same time, the green monochromatic layer 15G is formed in the green element forming region 10G-1.

  Subsequently, as shown in FIG. 13, the blue common layer 15B is formed on the entire surface of the substrate by, for example, vapor deposition. Thereafter, the electron injection layer 16 and the second electrode 17 are sequentially formed by, for example, vacuum deposition. In this manner, the red organic light emitting element 10R, the green organic light emitting element 10G, and the blue organic light emitting element 10B are formed on the driving substrate 10.

  After the red organic light emitting element 10R, the green organic light emitting element 10G, and the blue organic light emitting element 10B are formed as described above, the protective film 18 is formed thereon. At this time, a film forming method in which the energy of the film forming particles is small, for example, an evaporation method or a CVD method is preferable so as not to affect the base. Further, it is preferable that the second electrode 17 is continuously formed with the second electrode 17 without exposing the second electrode 17 to the atmosphere. This is because it is possible to suppress deterioration of the red organic light emitting element 10R, the green organic light emitting element 10G, and the blue organic light emitting element 10B due to moisture and oxygen in the atmosphere. Further, in order to prevent the luminance of the red organic light emitting element 10R, the green organic light emitting element 10G, and the blue organic light emitting element 10B from being lowered, it is preferable that the film forming temperature of the protective film 18 is set to room temperature, and the protective film 18 is peeled off. In order to prevent this, it is desirable to form the film under conditions that minimize the stress on the film.

  Finally, an adhesive layer 20 is formed on the protective film 18, and the sealing substrate 30 is bonded with the adhesive layer 20 in between. Thereby, the display device 1 shown in FIG. 1 is completed.

  Next, functions and effects of the donor substrate 2 and the display device 1 according to the present embodiment will be described.

  As shown in FIG. 2, the donor substrate 2 is formed on the entire surface of the substrate so as to cover the reflective layer 32A and the reflective layer 32A patterned in the blue corresponding region 40B in order from the surface side of the support substrate 30. When the laser light L is irradiated from the surface side of the support substrate 30 by having the photothermal conversion layer 34 and the reflective layer 32B patterned in the red corresponding region 40R, the laser light L is In the red corresponding region 40R, the irradiated laser light L is reflected by the reflective layer 32B, while in the green corresponding region 40G and the blue corresponding region 40B, the laser light L is absorbed by the light-to-heat conversion layer 34 and photothermally converted. Therefore, the red transfer layer 36R-1 is formed on the surface side of the reflective layer 32B, the counter substrate 100 is bonded to the red transfer layer 36R-1, and the laser light L is irradiated from the counter substrate 100 side. The red transfer layer 36R remains only in the red corresponding region 40R. On the other hand, the red transfer layer 36R-1 in the green corresponding region 40G and the blue corresponding region 40B is transferred to the counter substrate 100 and removed from the donor substrate 2.

  On the other hand, when the laser beam L is irradiated from the back surface side of the support substrate 30 of the donor substrate 2, the laser beam L is reflected by the reflective layer 32B in the blue corresponding region 40B, while the green corresponding region 40G and the red corresponding region. In 40R, it is absorbed by the photothermal conversion layer 34 and is photothermally converted. Therefore, the green transfer layer 36G is formed on the entire surface of the support substrate 30 so as to cover the red transfer layer 36R, and the surface on which these transfer layers are formed faces the element formation substrate 3. The green transfer layer 36G remains only in the blue corresponding region 40B by arranging and irradiating the laser beam L from the back surface side of the support substrate 30 of the donor substrate 2. On the other hand, in the red corresponding area 40R, the red transfer layer 36R and the green transfer layer 36G are transferred, and in the green corresponding area 40G, the green transfer layer 36G is transferred. As a result, the red mixed layer 15R and the green monochromatic layer 15G are collectively transferred to the red element forming region 10R-1 and the green element forming region 10G-1 of the element forming substrate 3, respectively.

  As described above, by performing transfer using the donor substrate 2 of the present embodiment, only selective regions of the transfer layer can be transferred collectively. In addition, the complicated process of forming a laser beam spot shape and selectively irradiating only a predetermined region as in the prior art is not required. Only these regions can be transferred or left. Therefore, the number of transfer processes is reduced, the tact time is shortened, and the manufacturing yield is improved.

  Further, since the adhesion layer 31A for improving the adhesion of the reflection layer 32A to the support substrate 30 is formed between the support substrate 30 and the reflection layer 32, the antireflection layer 33A and the photothermal conversion layer 34 are formed. The reflective layer 32A is less likely to be peeled off from the support substrate 30. Therefore, it becomes easy to obtain a desired pattern configuration.

For example, the support substrate 30 is made of glass, the reflective layers 32A and 32B are silver alloy with a thickness of 100 nm, the adhesion layers 31A, 31B, and 31C are ITO with a thickness of 10 nm, and the antireflection layers 33A and 33B are amorphous silicon with a thickness of 34 nm to 35 nm. Then, the photothermal conversion layer 34 was patterned using molybdenum having a thickness of 100 nm, and the protective layer 35 was patterned using SiN _x having a thickness of 100 nm, so that the donor substrate shown in FIG. 5 was produced. The photograph which observed this produced donor substrate from the surface side of the support substrate 30 is shown in FIG. As described above, one pixel P is patterned into three regions, and corresponds to the blue corresponding region 40B, the green corresponding region 40G, and the red corresponding region 40R, respectively.

  Further, the reflectance with respect to the wavelength of the laser beam when the laser beam was irradiated from the front surface side and the back surface side of the support substrate 30 of the donor substrate manufactured in this way was measured, and the result is shown in FIG. Show. In addition, A in the figure is a reflectance in the blue corresponding region 40B when the laser beam L is irradiated from the back side of the support substrate 30 as shown in FIG. 15B, and B is from the back side of the support substrate 30. The reflectance in the green corresponding region 40G when irradiated with the laser light L, C is the reflectance in the red corresponding region 40R when irradiated with the laser light L from the surface side of the support substrate 30, and D is from the surface side of the support substrate 30. When the laser beam L is irradiated, the reflectance in the green corresponding region 40G and E indicates the reflectance in the blue corresponding region 40B.

  As shown in FIG. 15A, the case where the reflective layer 32A is provided on the side irradiated with the laser light L (A) and the case where the reflective layer 32B is provided on the side irradiated with the laser light L (C). The reflectivity was high. This result indicates that when the laser beam L is irradiated from the surface side of the support substrate 30, the irradiated laser beam is reflected and does not reach the photothermal conversion layer 34 in the red corresponding region 40R. On the other hand, when the laser beam L is irradiated from the back side of the support substrate 30, the blue corresponding region 40 </ b> B indicates that the irradiated laser beam is reflected and does not reach the photothermal conversion layer 34.

  On the other hand, in the case of having the photothermal conversion layer 34 on the side irradiated with the laser beam L (B, D, and E), the reflectance was low. This result shows that when the laser beam L is irradiated from the surface side of the support substrate 30, the laser beam L is absorbed by the photothermal conversion layer 34 in the green corresponding region 40G and the blue corresponding region 40B. On the other hand, when the laser beam L is irradiated from the back surface side of the support substrate 30, the laser light L is absorbed by the photothermal conversion layer 34 in the green corresponding region 40G and the red corresponding region 40R.

  From these results, it can be seen that the transfer layer can be transferred or remain in a selective region even if the entire surface of the support substrate 30 is irradiated with the laser light L from the respective directions on the front surface side and the back surface side. Moreover, even if the adhesion layer 31A for preventing the reflection layer 32A from being peeled off is provided between the reflection layer 32A and the support substrate 30, it is understood that the reflection layer 32A maintains a high reflectance. In particular, when the wavelength of the laser beam L is 700 nm or more, the reflectance in B, D, and E can be suppressed to 10% or less while securing the reflectance in A and C to 90% or more. This is preferable because it can be accurately transferred.

  In addition, since the red transfer layer 36R and the green transfer layer 36G are formed again on the donor substrate 2 after the red transfer layer 36R and the green transfer layer 36G are collectively transferred, the batch transfer can be repeatedly performed, thereby recycling. Is possible. For this reason, it is preferable that the support substrate 30 is made of a material having heat resistance and rigidity such as glass.

  In the display device 1, the blue common layer 15B is provided in common to the red organic light emitting element 10R, the green organic light emitting element 10G, and the blue organic light emitting element 10B. Since the blue common layer 15B as the blue light emitting layer is formed as a layer common to the three color elements, the mixed layer 15R including the material and the green light emitting material is formed, so that each element has a low energy level. Energy transitions occur in order. Therefore, red light emission is dominant in the red organic light emitting element 10R, green light emission is dominant in the green organic light emitting element 10G, and blue light emission is dominant in the blue organic light emitting element 10B. Therefore, by forming the blue light emitting layer as a common layer for each element, it is not necessary to perform the transfer three times as in the conventional case, and the number of times of transfer can be reduced to one.

  While the present invention has been described with reference to the embodiment, the present invention is not limited to the above embodiment, and various modifications can be made. For example, in the above-described embodiment, the case of transferring by irradiating laser light has been described. However, for example, other radiation such as a lamp may be irradiated.

  In addition, the donor substrate 2 has been described by taking as an example a configuration in which the transfer layer is formed on the surface side of the support substrate 30, but the present invention is not limited to this, and the support substrate 30 of the photothermal conversion layer 34 and the photothermal conversion layer 34 is not limited thereto. The effect of the present invention can be achieved if the structure includes the reflective layer 32A patterned on the side of the light and the reflective layer 32B patterned on the side on which the transfer layer of the photothermal conversion layer 34 is formed.

  Moreover, although the case where the display apparatus 1 is a top emission type was demonstrated, it is not limited to this, A transmission type or a bottom emission type may be sufficient. Moreover, although the case where the 2nd electrode 17 was used as a cathode electrode was demonstrated, you may make it use as an anode electrode. For example, in the case of the transmission type, when the second electrode is used as an anode electrode, it is made of a highly reflective conductive material. When the second electrode is used as a cathode electrode, the work function is small and the conductivity is high. It is made up of materials.

  Further, the material and thickness of each layer described in the above embodiment, the film forming method, the film forming condition, the irradiation condition of the laser beam L, and the like are not limited, and other materials and thicknesses may be used. The film forming method, film forming conditions, and irradiation conditions may be used.

In the above embodiment, the configurations of the red organic light emitting element 10R, the green organic light emitting element 10G, and the blue organic light emitting element 10B have been specifically described. However, it is not necessary to provide all the layers, A layer may be further provided. For example, a thin film layer for hole injection made of chromium oxide (III) (Cr ₂ O ₃ ), ITO or the like may be provided between the first electrode 11 and the hole injection layer 13.

It is sectional drawing showing the structure of the display apparatus which concerns on one embodiment of this invention. It is sectional drawing showing the structure of the donor substrate which concerns on one embodiment of this invention. FIG. 3 is a cross-sectional view illustrating a method for manufacturing the donor substrate illustrated in FIG. 2 in the order of steps. FIG. 4 is a cross-sectional view illustrating a process following FIG. 3. FIG. 5 is a cross-sectional view illustrating a process following FIG. 4. FIG. 6 is a cross-sectional view illustrating a process following FIG. 5. FIG. 7 is a cross-sectional view illustrating a process following FIG. 6. FIG. 8 is a cross-sectional diagram illustrating a process following the process in FIG. 7. It is sectional drawing showing the formation method of the element formation board | substrate in order of a process. It is sectional drawing showing the structure of the board | substrate for element formation. It is sectional drawing showing the transcription | transfer process using the donor substrate shown in FIG. FIG. 12 is a cross-sectional diagram illustrating a process following the process in FIG. 11. FIG. 13 is a cross-sectional diagram illustrating a process following the process in FIG. 12. It is the photograph which image | photographed the donor substrate before transfer layer formation from the surface side of the support substrate. It is a figure for demonstrating the reflectance with respect to the laser beam of the donor substrate shown in FIG.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10R ... Red organic light emitting element, 10G ... Green organic light emitting element, 10B ... Blue organic light emitting element, 1 ... Display apparatus, 2 ... Donor substrate, 10 drive substrate, 11 ... 1st electrode, 12 ... Insulating film, 13 ... Positive Hole injection layer, 14 ... hole transport layer, 15R ... red mixed layer, 15G ... green monochromatic layer, 15B ... blue common layer, 16 ... electron injection layer, 17 ... second electrode, 18 ... protective film, 19 ... adhesive layer 20 ... sealing substrate, 30 ... support substrate, 31A, 31B, 31C ... adhesion layer, 32A, 32B ... reflection layer, 33A, 33B ... antireflection layer, 34 ... photothermal conversion layer, 36R ... red transfer layer, 36G ... green transfer layer, 40R ... red corresponding area, 40G ... green corresponding area, 40B ... blue corresponding area.

Claims (14)

A transfer substrate is formed on the surface side of a light-transmitting support substrate, and is a donor substrate used for transferring the transfer layer to a transfer medium by irradiating the support substrate with light,
A photothermal conversion layer for converting light energy into heat energy is provided between the support substrate and the transfer layer,
A first region having a first light reflecting layer on the support substrate side of the photothermal conversion layer, and a second region having a second light reflecting layer on the transfer layer side of the photothermal conversion layer. A donor substrate comprising: The donor substrate according to claim 1, wherein the transfer layer is integrated on a surface side of the support substrate. The transfer layer is
A red transfer layer provided in the second region and including a red organic light emitting material;
The donor substrate according to claim 1, further comprising a green transfer layer that is provided so as to cover the red transfer layer and includes a green organic light emitting material. The donor substrate according to claim 1, wherein a first adhesion layer is provided between the support substrate and the first light reflection layer in the first region. A first antireflection layer on the support substrate side of the photothermal conversion layer, and a second antireflection layer on the transfer layer side of the photothermal conversion layer,
The first light reflection preventing layer is provided between the first light reflecting layer and the photothermal conversion layer in the first region,
The donor substrate according to claim 1, wherein the second light reflection preventing layer is provided between the second light reflection layer and the photothermal conversion layer in the second region. The donor substrate according to claim 5, wherein a second adhesion layer is provided between the first light reflection layer and the first light reflection prevention layer in the first region. The donor substrate according to claim 5, wherein a third adhesion layer is provided between the second light reflection layer and the second light reflection prevention layer in the second region. The donor substrate according to claim 1, further comprising a protective layer for preventing oxidation of the photothermal conversion layer on the transfer layer side of the photothermal conversion layer. The donor substrate according to claim 1, wherein the support substrate is made of a material having heat resistance and rigidity. The donor substrate according to claim 1, wherein the first light reflection layer and the second light reflection layer are made of a metal containing silver (Ag). The donor substrate according to claim 4, wherein the first adhesion layer is made of ITO (Indium Tin Oxide). A transfer layer is formed on the surface side of a light-transmissive support substrate, and a method for producing a donor substrate used for transferring the transfer layer to a transfer target by irradiating the support substrate with light,
Forming a first light reflecting layer in a first region on the surface side of the support substrate;
Forming a photothermal conversion layer for converting light energy into heat energy on the surface side of the support substrate so as to cover the first light reflection layer;
Forming a second light reflecting layer for reflecting light in a second region on the surface side of the support substrate after forming the light-to-heat conversion layer. Forming a red light emitting layer containing a red light emitting material on the surface side of the support substrate after forming the second light reflecting layer; and
The supporting substrate is configured such that a counter substrate that transmits light is disposed to face the red light emitting layer, and a part of the red light emitting layer is transferred to the counter substrate by irradiating light from the counter substrate side. Forming a red transfer layer thereon;
The method for producing a donor substrate according to claim 12, further comprising: forming a green transfer layer containing a green light emitting material so as to cover the red transfer layer after forming the red transfer layer. Forming the first light reflection layer in the first region on the surface side of the support substrate via a first adhesion layer for improving the adhesion of the first light reflection layer to the support substrate; The method for producing a donor substrate according to claim 12.

Images