JP2009266451A - Method for manufacturing display, and transfer substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a display for removing an organic layer on an auxiliary electrode by a simple procedure, with no limit on material quality and layout on the side of device substrate. <P>SOLUTION: A lower electrode 5 and an auxiliary electrode 5a are formed in pattern on a substrate 1, being insulated from each other, on which organic layers 13, 15b and 17 are fill-formed. A transfer substrate 30 is prepared which includes a photothermal conversion layer 23 provided with a hole pattern 23a and a film thickness adjusting layer (organic transfer layer) 19 above it. The transfer substrate 30 and the substrate 1 are superposed each other in such manner as the film thickness adjusting layer 19 and the electron transportation layer (organic layer) 17 face each other while the hole pattern 2a and the auxiliary electrode 5a face each other. Laser beam Lh is radiated from the side of transfer substrate 30 to the photothermal conversion layer 23 so that the film thickness adjusting layer 19 on the photothermal conversion layer 23 is thermally transferred on the lower electrode 5, forming a film thickness adjusting layer (organic transfer pattern). The auxiliary electrode 5a is irradiated with the laser beam Lh to remove an organic layer on the auxiliary electrode 5a. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a display device and a transfer substrate, and more particularly to a method for manufacturing a display device including an organic electroluminescent element in which an organic layer is sandwiched between electrodes, and a transfer substrate used in the method.

  Organic electroluminescent devices using electroluminescence of organic materials are attracting attention as light emitting devices capable of emitting light with high brightness by low voltage direct current drive. In such an active matrix display device using an organic electroluminescent element, a pixel driving circuit using a thin film transistor is provided for each pixel on the substrate, and the organic electroluminescent element is formed on an interlayer insulating film covering the pixel driving circuit. Has been.

  Each organic electroluminescent element includes a lower electrode patterned for each pixel in a state connected to the pixel driving circuit, and an isolation insulating film that exposes a central portion of the lower electrode as a pixel opening and covers the periphery thereof . An organic layer is provided on the lower electrode in the pixel opening in the isolation insulating film, and the upper electrode is provided so as to cover the organic layer. Among these, the upper electrode is formed, for example, as a solid film that covers a plurality of pixels, and is used as an upper common electrode common to the plurality of pixels.

  In the active matrix display device having the above-described configuration, a so-called top surface light extraction structure (hereinafter referred to as a top surface emission type) that extracts light from the opposite side of the substrate in order to ensure the aperture ratio of the organic electroluminescence element. ) Is effective. For this reason, the upper electrode is required to be thin in order to ensure optical transparency, and this tends to increase the resistance value and cause a voltage drop. Therefore, an auxiliary electrode made of the same layer as the lower electrode is formed while maintaining insulation with respect to the lower electrode, and the auxiliary electrode is connected to the upper electrode to prevent a voltage drop of the upper electrode.

  In the manufacture of the display device as described above, a transfer method capable of increasing the size of a substrate is attracting attention as a technique for forming an organic layer as compared with a conventional mask vapor deposition method. In the formation of the organic layer by the transfer method, a transfer substrate provided with an organic layer on the photothermal conversion layer is prepared, and the substrate and the transfer substrate are overlapped with the organic layer side facing the lower electrode. The laser light irradiated from the transfer substrate side is thermally converted by the photothermal conversion layer, and the organic layer on the photothermal conversion layer is thermally transferred onto the lower electrode.

  Here, among the organic layers to be thermally transferred, the light emitting layer is patterned for each color pixel, and the organic layers common to the respective color pixels such as other hole transport layers are collectively formed on the substrate. For this reason, it is necessary to remove the common organic layer formed on the auxiliary electrode after the thermal transfer.

  Therefore, a method of selectively removing the organic layer on the auxiliary electrode by laser irradiation from the organic layer side after the formation of the organic layer has been proposed (see Patent Document 1 below). A method of performing such laser irradiation from the substrate side has also been proposed. In this case, a light-transmitting substrate is used as the substrate, and a photothermal conversion layer is disposed between the substrate and the auxiliary electrode, or the auxiliary electrode itself is used as the photothermal conversion layer, thereby selecting an organic layer on the auxiliary electrode. (Refer to the following Patent Document 2).

JP 2005-11810 A JP 2006-286493 A

  However, in the method of removing the organic layer by laser irradiation from the organic layer side, thermal transfer of the organic layer using the transfer substrate is performed in the laser irradiation unit of the manufacturing apparatus, and then the substrate of the laser irradiation unit is transferred to the transfer substrate separating unit. The transfer substrate is separated and removed from the substrate by moving the substrate. Then, laser irradiation from the organic layer side is performed again in the laser irradiation unit. For this reason, the movement frequency of a board | substrate is high in a manufacturing apparatus, and becomes the factor of a through-put reduction.

  Further, in the method of removing the organic layer on the auxiliary electrode by laser light irradiation from the substrate side, a material layer that absorbs the laser light cannot be disposed between the auxiliary electrode and the substrate, and the layout of the active matrix pixel driving circuit is not possible. Is limited. In addition, the materials of the substrate and the auxiliary electrode are also limited, which increases the component cost.

  Therefore, the present invention can remove the organic layer on the auxiliary electrode by a simpler procedure without restricting the layout and material on the device substrate side, thereby improving the throughput and reducing the manufacturing cost. It is an object of the present invention to provide a method for manufacturing a display device and a transfer substrate.

  In order to achieve such an object, the method for manufacturing a display device of the present invention is characterized by performing the following steps. First, in the first step, a pattern is formed on the substrate with the lower electrode and the auxiliary electrode kept insulative. In the next second step, an organic layer is formed on the substrate. Next, in a third step, a transfer substrate provided with a photothermal conversion layer provided with a hole pattern and an organic transfer layer on top of this is prepared and superimposed on the substrate. At this time, the organic transfer layer on the transfer substrate and the organic layer on the substrate are made to face each other, and the hole pattern on the transfer substrate side and the auxiliary electrode on the substrate side are made to face each other. Thereafter, in the fourth step, the photothermal conversion layer is irradiated with energy rays from the transfer substrate side, whereby the organic transfer layer on the photothermal conversion layer is thermally transferred onto the lower electrode to form an organic transfer pattern. In the fifth step performed before and after the fourth step, the organic layer on the auxiliary electrode is removed by irradiating the auxiliary electrode with energy rays from the transfer substrate side through the hole pattern. In the subsequent sixth step, the upper electrode is formed on the substrate in a state where it is laminated on the organic transfer pattern and in contact with the auxiliary electrode from which the organic layer has been removed.

  The present invention is also a transfer substrate used in such a manufacturing method, and is provided on a substrate through a light transmissive substrate, a photothermal conversion layer provided on the substrate with a hole pattern, and the photothermal conversion layer. An organic transfer layer.

  According to the above configuration, energy beam irradiation for forming an organic transfer pattern on the substrate and energy beam irradiation for selectively removing the already formed organic layer from the auxiliary electrode are performed. Are continuously performed via one transfer substrate. For this reason, it is not necessary to separate and remove the transfer substrate from the substrate between the two energy beam irradiations. In addition, since the energy rays are irradiated from the transfer substrate side, there is no restriction on the layout, material, and the like on the substrate side on which the lower electrode is formed.

  As described above, according to the present invention, the organic layer on the auxiliary electrode can be removed by a simpler procedure without limiting the layout and material on the device substrate side. This makes it possible to improve throughput and reduce manufacturing costs in the manufacture of display devices having organic electroluminescent elements.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In each embodiment, a manufacturing process of an active matrix display device using an organic electroluminescence element and a configuration of a transfer substrate used in the manufacturing process will be described with reference to cross-sectional process diagrams.

<First Embodiment>
First, as shown in FIG. 1, a thin film transistor Tr is formed on each pixel a on a substrate 1 made of glass, for example. Although not shown here, on the substrate 1, signal lines and scanning lines connected to the thin film transistor Tr and peripheral circuits are formed on the substrate 1 by the same process as the formation of the thin film transistor Tr. The pixels a constitute a single display pixel by combining the pixels a (R), a (G), and a (B) of each color, and are arranged on the substrate 1 in a matrix.

  Next, an interlayer insulating film 3 is formed on the substrate 1 so as to cover the pixel driving circuit including the thin film transistor Tr. The interlayer insulating film 3 is formed as a planarized insulating film having a flat surface, and is provided with a connection hole 3a reaching the thin film transistor Tr.

  Next, on the substrate 1 whose surface is covered with the interlayer insulating film 3 as described above, the lower electrodes 5 connected to the respective thin film transistors Tr through the connection holes 3a are arranged and formed as pixel electrodes. The lower electrode 5 is used, for example, as an anode of an organic electroluminescent element, and is formed using chromium (Cr) as an example. In addition, the auxiliary electrode 5a is formed at a position where the insulation with the lower electrode 5 is maintained in the same process as the formation of the lower electrode 5. The auxiliary electrode 5a is disposed between the lower electrodes 5-5, for example, in a lattice shape.

  Next, an isolation insulating film 7 that covers the periphery of the lower electrode 5 is patterned on the substrate 1. The isolation insulating film 7 includes a pixel opening 7a that opens widely in the center of the lower electrode 5, and a connection hole 7b that reaches the auxiliary electrode 5a. The connection hole 7b should just be provided in the position which does not affect a display. For this reason, the isolation insulating film 7 has a lattice pattern, and is formed in a shape in which connection holes 7b are provided at the respective positions of the lattice. The pattern formation of the isolation insulating film 7 is performed by applying, for example, a lithography technique. In this case, the pixel opening 7a and the connection hole 7b are formed by performing a lithography process on the coated polyimide film using a photosensitive composition such as polyimide.

  Next, in a state where the exposed surface of the lower electrode 5 is completely covered, a hole supply layer 13 formed by laminating a hole injection layer and a hole transport layer in this order is formed as an organic layer. At this time, first, as the hole injection layer, for example, m-MTDATA [4,4,4-tris (3-methylphenylphenylamino) triphenylamine] is vapor-deposited to a thickness of 25 nm. Next, α-NPD [4,4-bis (N-1-naphthyl-N-phenylamino) biphenyl] is deposited as a hole transport layer to a thickness of 30 nm.

  Thereby, the hole supply layer (organic layer) 13 having a laminated structure of the hole injection layer and the hole transport layer is not only on the lower electrode 5 on the bottom of the pixel opening 7a but also on the isolation insulating film 7 and the connection hole. A film is also formed on the upper portion of the auxiliary electrode 5a at the bottom of 7b.

  Next, as shown in FIG. 1B, a green light emitting layer 15g is formed as an organic transfer pattern above the lower electrode 5 in the green pixel a (G) by a transfer method using the transfer substrate 20g.

  At this time, first, a transfer substrate 20g is prepared. The transfer substrate 20g is provided with a photothermal conversion layer 23 on a light transmissive substrate 21 made of glass or plastic material. This photothermal conversion layer 23 is formed by depositing chromium (Cr) with a film thickness of 200 nm by sputtering, for example. On the photothermal conversion layer 23, a silicon nitride film (SiNx) is formed as a protective layer 25 with a thickness of 90 nm by a CVD method. On the protective layer 25, a light emitting transfer layer 15G containing a green light emitting material is formed with a film thickness of 25 nm. The green light emitting material used here may be fluorescent or phosphorescent. In addition to the green light emitting material, the light emitting transfer layer 15G includes at least one of a hole transporting material, an electron transporting material, and a charge transporting material. Such a light-emitting transfer layer 15G is composed of, for example, a mixture of di (2-naphthyl) anthracene (ADN) and 5% by weight of coumarin 6 as a green light-emitting material.

  Transfer using the transfer substrate 20g having the above-described configuration is performed as follows. First, in a vacuum atmosphere, the substrate 1 on which the hole supply layer (organic layer) 13 is formed and the transfer substrate 20g are overlapped with the hole supply layer (organic layer) 13 and the light emitting transfer layer 15G facing each other. Match. At this time, the isolation insulating film 7 on the substrate 1 functions as a spacer. Thereby, even when the substrate 1 and the transfer substrate 20g are overlapped, the hole supply layer (organic layer) 13 on the lower electrode 5 on the substrate 1 side and the light-emitting transfer layer 15G on the transfer substrate 20g side are interposed. A vacuum state space is formed.

In this state, the laser beam Lh, for example, is applied as an energy ray to the photothermal conversion layer 23 from the transfer substrate 20g side. At this time, only the portion corresponding to the green light emitting pixel a (G) is selectively irradiated with the laser light Lh, and heat is generated in the laser light Lh irradiation portion of the photothermal conversion layer 23. As the laser light Lh, for example, a semiconductor laser light having a wavelength of 800 nm is used, and the irradiation conditions are, for example, 0.3 mW / μm ² and a scanning speed of 250 mm / sec. Then, the portion of the light emitting transfer layer 15G corresponding to the irradiated portion of the laser light Lh is thermally transferred to the pixel a (G) portion on the substrate 1 side, and the green light emitting layer 15g as an organic transfer pattern is formed above the lower electrode 5 of the substrate 1. The pattern is formed.

  After this transfer, the overlapping substrate 1 and the transfer substrate 20g are separated.

  Next, as shown in FIG. 2A, a red light emitting layer 15r is formed as an organic transfer pattern above the lower electrode 5 in the red pixel a (R) by a transfer method using the transfer substrate 20r.

  At this time, first, a transfer substrate 20r is prepared. This transfer substrate 20r uses a light emitting transfer layer 15R containing a red light emitting material instead of the light emitting transfer layer (15G) containing a green light emitting material in the transfer substrate used when transferring the green light emitting layer 15g. It may be a configuration. The light emitting transfer layer 15R containing the red light emitting material is formed with a film thickness of, for example, 30 nm. The red light emitting material used here may be fluorescent or phosphorescent. In addition to the red light emitting material, the light emitting transfer layer 15R includes at least one of a hole transporting material, an electron transporting material, and both charge transporting materials. Such a light-emitting transfer layer 15R is made of, for example, di (2-naphthyl) anthracene (ADN), 2,6≡bis [(4′≡methoxydiphenylamino) styryl] ≡1,5≡dicyanonaphthalene, which is a red light emitting material. It is assumed that it is composed of 30% by weight of (BSN).

  The transfer using the transfer substrate 20r having the above-described configuration may be performed in the same manner as the transfer using the green transfer substrate 20g. That is, first, in a vacuum atmosphere, the substrate 1 on which the green light emitting layer 15g is formed and the transfer substrate 20r are overlapped with the hole supply layer (organic layer) 13 and the light emitting transfer layer 15R facing each other. . At this time, the isolation insulating film 7 on the substrate 1 functions as a spacer. Accordingly, even when the substrate 1 and the transfer substrate 20r are overlapped, the hole supply layer (organic layer) 13 on the lower electrode 5 on the substrate 1 side and the light-emitting transfer layer 15G on the transfer substrate 20r side are interposed. Similarly, a vacuum space is formed.

In this state, the laser beam Lh, for example, is applied as an energy ray to the photothermal conversion layer 23 from the transfer substrate 20r side. At this time, only the portion corresponding to the red light emitting pixel a (R) is selectively irradiated with the laser light Lh, and heat is generated in the laser light Lh irradiation portion of the photothermal conversion layer 23. As the laser light Lh, for example, a semiconductor laser light having a wavelength of 800 nm is used, and the irradiation conditions are, for example, 0.3 mW / μm ² and a scanning speed of 250 mm / sec. Then, the portion of the light emitting transfer layer 15R corresponding to the irradiated portion of the laser light Lh is thermally transferred to the pixel a (R) portion on the substrate 1 side, and the red light emitting layer 15r as an organic transfer pattern is formed above the lower electrode 5 of the substrate 1. The pattern is formed.

  After the transfer, the overlapping substrate 1 and transfer substrate 20r are separated.

  Either the pattern formation by transferring the green light emitting layer 15g or the pattern formation by transferring the red light emitting layer 15r may be performed first.

  Next, as shown in FIG. 2B, a blue light emitting layer 15b is formed on the entire surface of the substrate 1 including the blue pixels a (B). The blue light emitting layer 15b is formed by the same vapor deposition method as the hole injection layer and the hole transport layer.

  The light emitting transfer layer containing the blue light emitting material is formed with a film thickness of, for example, 30 nm. The blue light emitting material used here may be fluorescent or phosphorescent. The blue light-emitting transfer layer contains at least one of a hole transporting material, an electron transporting material, and a charge transporting material in addition to the blue light emitting material. Such a light-emitting transfer layer is formed by, for example, di (2-naphthyl) anthracene (ADN) and 4,4′≡bis [2≡ {4≡ (N, N≡diphenylamino) phenyl} vinyl], which is a blue light-emitting material. It is assumed that it is composed of a mixture of 2.5% by weight of biphenyl (DPAVBi).

  The light emitting layer 15b as an organic layer formed on the entire surface of the substrate 1 in this way functions as a layer for adjusting the resonance film thickness in the red pixel a (R) and the green pixel a (G). To do.

  Next, on the blue light emitting layer 15b formed on the entire surface of the substrate 1, the electron transport layer 17 is formed as an organic layer with a film thickness of about 20 nm. The electron transport layer 17 is made of, for example, 8≡hydroxyquinoline aluminum (Alq3), and is formed on the entire surface by vapor deposition.

  After the above, as shown in FIG. 3, the film thickness adjusting layer 19 for adjusting the resonant film thickness is formed above the electron transport layer 17 in the blue pixel a (B) by the transfer method using the transfer substrate 30. Are formed as an organic transfer pattern. The first embodiment is characteristic from this step.

  At this time, first, a transfer substrate 30 is prepared. The transfer substrate 30 is formed of a chromium (Cr) film having a thickness of 200 nm as a photothermal conversion layer 23 on a light-transmitting substrate 21 made of glass or plastic material by a sputtering method. The photothermal conversion layer 23 is characterized in that a hole pattern 23a is provided by etching using, for example, a resist pattern formed by a lithographic method as a mask. The hole pattern 23a is provided at a position corresponding to the connection hole 7a formed in the isolation insulating film 7 on the substrate 1 side.

  On the photothermal conversion layer 23 having such a hole pattern 23a, a silicon nitride film (SiNx) is formed as a protective layer 25 with a thickness of 90 nm by a CVD method. On the protective layer 25, 8≡hydroxyquinoline aluminum (Alq 3) is formed as a film thickness adjusting layer 19 with a film thickness of 120 nm.

  Transfer using the transfer substrate 30 configured as described above is performed as follows. First, in a vacuum atmosphere, the substrate 1 and the transfer substrate 30 are overlapped with the electron transport layer (organic layer) 17 and the film thickness adjusting layer 19 facing each other. At this time, it is important that the connection hole 7b of the isolation insulating film 7 formed on the substrate 1 side and the hole pattern 23a of the photothermal conversion layer 23 formed on the transfer substrate 30 are opposed to each other. In addition, the isolation insulating film 7 on the substrate 1 functions as a spacer, and even when the substrate 1 and the transfer substrate 30 are overlapped, a vacuum space is formed between them, as in the transfer of each layer described above. It is.

  In this state, for example, the laser beam Lh is irradiated from the transfer substrate 30 side to the photothermal conversion layer 23 as an energy ray. At this time, only the portion corresponding to the blue light emitting pixel a (B) is selectively irradiated with the same laser beam Lh as described above, and the film thickness adjusting layer 19 corresponding to the irradiated portion of the laser light Lh is formed. Thermal transfer is performed on the pixel a (B) portion on the substrate 1 side as an organic transfer pattern.

  Thereafter, as shown in FIG. 4, the laser beam Lh is selectively irradiated to the hole pattern 23 a portion of the photothermal conversion layer 23 formed on the transfer substrate 30 from the same transfer substrate 30 side. As a result, the laser beam Lh is irradiated to the auxiliary electrode 5a at the bottom of the connection hole 7b formed in the isolation insulating film 7 on the substrate 1 side through the hole pattern 23a, and the laser beam Lh is irradiated by photothermal conversion at the auxiliary electrode 7a. Generate heat in the part. Then, the organic layer on the auxiliary electrode 7a corresponding to the irradiated portion of the laser beam Lh, that is, the hole supply layer 13, the blue light emitting layer 15b, and the electron transport layer 17 are sublimated and removed.

  After the organic layer is removed, the overlapping substrate 1 and transfer substrate 30 are separated.

  It should be noted that either the film thickness adjusting layer transfer step or the organic layer removal step, which is performed by superimposing the same transfer substrate 30 on the substrate 1, may be performed first.

  Further, the photothermal conversion layer 23 of the transfer substrate 30 and the auxiliary electrode 7a used as the photothermal conversion layer when removing the organic layers (the hole supply layer 13, the blue light emitting layer 15b, and the electron transport layer 17) are the same. It can also be comprised with Cr which is material. For this reason, by extending the irradiation range of the laser beam Lh for pattern transfer of the film thickness adjusting layer 19 shown in FIG. 3 to the auxiliary electrodes 7a on both sides, this portion of the laser beam Lh can be irradiated with one irradiation of the laser beam Lh. The organic layer can also be removed.

  After the above, as shown in FIG. 5, the film thickness adjusting layer 19 is pattern-transferred, and the upper electrode 41 common to each pixel a is formed on the substrate 1 from which the organic layer on the auxiliary electrode 5a has been removed. The upper electrode 41 is in contact with the auxiliary electrode 5a exposed at the bottom of the hole 7b. The upper electrode 41 is used as, for example, a cathode of an organic electroluminescence device. The upper electrode 41 and the lower electrode 5 are organic material layers including light emitting layers 15a, 15g, and 15b of each color made of an organic material. The organic electroluminescence element EL for emitting each color is formed in the sandwiched portion.

  Here, each organic electroluminescent element EL is a microresonator that resonates the light emitted from the light emitting layers 15a, 15g, and 15b of each color between the lower electrode 5 and the upper electrode 41 and extracts from the upper electrode 41 side. It is formed as a top emission type formed as a structure. For this reason, the upper electrode 41 is made of a semi-transmissive and semi-reflective material, and is made of, for example, magnesium silver (MgAg) with a thickness of 10 nm. In such an upper electrode 41, the upper common electrode is formed by a film forming method in which the energy of the film forming particles is small enough not to affect the base, for example, a vapor deposition method or a CVD (chemical vapor deposition) method. I will do it. Desirably, the upper electrode 41 is continuously formed in the same apparatus as the formation of each layer made of an organic material without exposing the layer made of the organic material to the atmosphere, so that Prevents deterioration of the layer of material.

  Next, an insulating or conductive protective film 43 is provided on the upper electrode 41. At this time, the protective film 43 is formed by, for example, a vapor deposition method or a CVD (chemical vapor deposition) method with a film formation method in which the energy of the film formation particles is small so as not to affect the base. . The protective film 43 is formed continuously in the same apparatus as the formation of the upper electrode 41 without exposing the upper electrode 41 to the atmosphere. This prevents deterioration of the organic layer due to moisture and oxygen in the atmosphere.

  The protective film 43 is formed with a sufficient film thickness using a material having low water permeability and water absorption for the purpose of preventing moisture from reaching the organic layer. Further, when the display device is a top emission type, this protective film is made of a material that transmits light generated in the organic layer, and has a transmittance of, for example, about 80%.

  In particular, here, the protective film 43 is formed of an insulating material, that is, the insulating protective film 43 is directly formed on the upper electrode 41 having a single layer structure made of a metal thin film. As such a protective film 43, an inorganic amorphous insulating material such as amorphous silicon (α-Si), amorphous silicon carbide (α-SiC), amorphous silicon nitride (α-Si1-xNx), and amorphous carbon ( α-C) and the like can be preferably used. Such an inorganic amorphous insulating material does not constitute grains, and thus has low water permeability and becomes a good protective film.

  For example, when forming the protective film 43 made of amorphous silicon nitride, it is formed to a thickness of 0.5 to 3 μm by the CVD method. However, at this time, the film formation temperature is set to room temperature in order to prevent a decrease in luminance due to the deterioration of the organic layer, and further, film formation is performed under conditions that minimize film stress in order to prevent the protective film 43 from peeling off. It is desirable.

  When the protective film 43 is made of a conductive material, a transparent conductive material such as ITO or IXO is used.

  After the protective film 43 is formed as described above, a glass substrate is fixed on the protective film 43 with an ultraviolet curable resin as necessary to complete the display device 45.

  According to the first embodiment as described above, as described with reference to FIGS. 3 and 4, irradiation of the laser beam Lh for forming the film thickness adjusting layer (organic transfer pattern) 19a on the substrate 1 is performed. And one irradiation of the laser beam Lh for selectively removing the organic layer (hole supply layer 13, blue light emitting layer 15b, electron transport layer 17) already formed from the auxiliary electrode 5a. This is performed continuously via the transfer substrate 30. Therefore, it is not necessary to separate and remove the transfer substrate 30 from the substrate 1 between the two irradiations of the laser light Lh. Further, since the laser beam Lh is all irradiated from the transfer substrate 30 side, there is no restriction on the layout, material, and the like on the substrate 1 side on which the lower electrode 5 is formed.

  Therefore, the organic layer on the auxiliary electrode 5a can be removed by a simpler procedure without limiting the layout and material on the substrate 1 side of the display device 45. As a result, in the manufacture of the display device 45 having the organic electroluminescent element EL, it becomes possible to improve the throughput and reduce the manufacturing cost.

Second Embodiment
6 and 7 are cross-sectional process diagrams showing the characteristic part of the manufacturing method of the second embodiment. The manufacturing method of the second embodiment will be described below. In addition, the same code | symbol is attached | subjected to the component same as a 1st form, and the overlapping description is abbreviate | omitted.

  First, the steps up to forming the electron transport layer 17 on the entire surface of the substrate 1 are performed in the same procedure as described with reference to FIGS. 1 and 2 in the first embodiment. Thereafter, a step of forming a film thickness adjusting layer for adjusting the resonant film thickness as an organic transfer pattern above the electron transport layer 17 in the blue pixel a (B) is performed. In the second embodiment, This process is characteristic.

  That is, first, as shown in FIG. 6, a transfer substrate 32 characteristic of the second embodiment is prepared. In this transfer substrate 32, the photothermal conversion layer 23 is patterned in a portion corresponding to the blue pixel a (B) on the light-transmitting substrate 21 made of glass or plastic material. The photoelectric conversion layer 23 is made of a chromium (Cr) film having a film thickness of 200 nm formed by a sputtering method, and is patterned by etching using, for example, a resist pattern formed by a lithography method.

  A characteristic is that the light reflection layer 35 is patterned in the same layer as the photothermal conversion layer 23. The light reflecting layer 35 may be made of, for example, a material that reflects a laser beam as an energy ray to be used later, and is made of, for example, Ag, Al, or an alloy mainly containing these metals. The light reflection layer 35 is characterized in that, for example, a hole pattern 35a and an opening window 35b are provided by etching using a resist pattern formed by a lithographic method as a mask. Of these, the hole pattern 33a is provided at a position corresponding to the connection hole 7a formed in the isolation insulating film 7 on the substrate 1 side. The opening window 35b is provided in a portion corresponding to the blue pixel a (B). The photothermal conversion layer 23 is arranged in the opening window 35b. It is assumed that the hole pattern 23a is also provided at a position corresponding to the connection hole 7a between the photothermal conversion layer 23 and between the photothermal conversion layer 23 and the light reflection layer 35.

  A silicon nitride film (SiNx) is formed as a protective layer 25 with a thickness of 90 nm on the light-to-heat conversion layer 23 and the light reflection layer 35 having such hole patterns 23a and 35a by the CVD method. On the protective layer 25, 8≡hydroxyquinoline aluminum (Alq 3) is formed as a film thickness adjusting layer 19 with a film thickness of 120 nm.

  Transfer using the transfer substrate 32 having the above-described configuration is performed as follows. First, in a vacuum atmosphere, the substrate 1 and the transfer substrate 32 are overlapped with the electron transport layer (organic layer) 17 and the film thickness adjusting layer 19 facing each other. At this time, it is important that the connection holes 7b of the isolation insulating film 7 formed on the substrate 1 side and the hole patterns 23a and 35a formed on the transfer substrate 30 are arranged to face each other. In addition, the isolation insulating film 7 on the substrate 1 functions as a spacer, and even when the substrate 1 and the transfer substrate 30 are overlapped, a vacuum space is formed between them, as in the transfer of each layer described above. It is.

In this state, the entire surface on the transfer substrate 32 side is irradiated with, for example, laser light Lh as energy rays. As the laser light Lh, a wavelength that is absorbed by the photothermal conversion layer 23 and the auxiliary wiring 5a to generate heat and has a high reflectance with respect to the light reflection layer 35 is selected. As such a laser beam Lh, for example, a semiconductor laser beam having a wavelength of 800 nm is used, and irradiation conditions are, for example, 0.3 mW / μm ² and a scanning speed of 250 mm / sec. Thereby, in the part in which the photothermal conversion layer 23 is arranged, the film thickness adjusting layer 19 is thermally transferred to the pixel a (B) portion on the substrate 1 side as an organic transfer pattern. Further, since the laser light Lh is reflected at the portion where the light reflecting layer 35 is disposed, the transfer of the film thickness adjusting layer 19 does not occur. Further, in the portion where the hole patterns 23a and 35a are arranged, the auxiliary electrode 5a at the bottom of the connection hole 7b formed in the separation insulating film 7 on the substrate 1 side is irradiated with the laser light Lh via the hole patterns 23a and 35a. Heat is generated in the laser light Lh irradiation part by photothermal conversion at the auxiliary electrode 7a. Then, the organic layer on the auxiliary electrode 7a corresponding to the irradiated portion of the laser beam Lh, that is, the hole supply layer 13, the blue light emitting layer 15b, and the electron transport layer 17 are sublimated and removed.

  After the organic layer is removed, the overlapping substrate 1 and transfer substrate 32 are separated.

  Thereafter, in the same manner as described with reference to FIG. 5 in the first embodiment, the film thickness adjustment layer 19 is pattern-transferred and is common to each pixel a on the substrate 1 from which the organic layer on the auxiliary electrode 5a is removed. The upper electrode 41 is formed. Thereby, the organic electroluminescent element EL of each color emission is formed in the part which sandwiches the organic material layer including the light emitting layers 15a, 15g and 15b of each color made of the organic material by the upper electrode 41 and the lower electrode 5. Furthermore, an insulating or conductive protective film 43 is provided on the upper electrode 41, and a glass substrate is fixed on the protective film 43 with an ultraviolet curable resin as necessary to complete the display device 45.

  In the second embodiment as described above, as described with reference to FIG. 7, the irradiation with the laser beam Lh for forming the film thickness adjusting layer (organic transfer pattern) 19a on the substrate 1 is already formed. Irradiation with the laser beam Lh for selectively removing the organic layers (the hole supply layer 13, the blue light emitting layer 15b, and the electron transport layer 17) from the auxiliary electrode 5a. Done at the same time. Compared with the first embodiment, the throughput can be further improved. Further, since the laser beam Lh is all irradiated from the transfer substrate 30 side, there is no restriction on the layout, material, and the like on the substrate 1 side on which the lower electrode 5 is formed, and the manufacturing cost is reduced. This is possible as in the first embodiment.

<Third Embodiment>
8 to 14 are cross-sectional process diagrams for explaining the manufacturing method of the third embodiment, and the third embodiment will be described below with reference to these drawings. In addition, the same code | symbol is attached | subjected and demonstrated to the component same as a 1st form.

  First, the process is performed until the hole supply layer (organic layer) 13 is formed on the entire surface of the substrate 1 in the same procedure as described with reference to FIG.

  Thereafter, a step of forming a green light emitting layer as an organic transfer pattern above the electron transport layer 17 in the green-blue pixel a (G) is performed. This step is characteristic in the third embodiment.

  That is, first, as shown in FIG. 8, a transfer substrate 20g 'characteristic of the third embodiment is prepared. The transfer substrate 20 ′ is formed by sputtering a chromium (Cr) film having a thickness of 200 nm as a light-to-heat conversion layer 23 on a light-transmitting substrate 21 made of glass or a plastic material. The photothermal conversion layer 23 is characterized in that a hole pattern 23a is provided by etching using, for example, a resist pattern formed by a lithographic method as a mask. The hole pattern 23a is provided at a position corresponding to the connection hole 7a formed in the isolation insulating film 7 on the substrate 1 side.

  On the photothermal conversion layer 23 having such a hole pattern 23a, a silicon nitride film (SiNx) is formed as a protective layer 25 with a thickness of 90 nm by a CVD method. On the protective layer 25, a light emitting transfer layer 15G containing a green light emitting material is formed with a film thickness of 25 nm. The green light emitting material used here may be fluorescent or phosphorescent. In addition to the green light emitting material, the light emitting transfer layer 15G includes at least one of a hole transporting material, an electron transporting material, and a charge transporting material. Such a light-emitting transfer layer 15G is composed of, for example, a mixture of di (2-naphthyl) anthracene (ADN) and 5% by weight of coumarin 6 as a green light-emitting material.

  Transfer using the transfer substrate 20g 'having the above-described configuration is performed as follows. First, in a vacuum atmosphere, the substrate 1 on which the hole supply layer (organic layer) 13 is formed and the transfer substrate 20g ′ are placed in a state where the hole supply layer (organic layer) 13 and the light emitting transfer layer 15G face each other. Overlapping. At this time, the isolation insulating film 7 on the substrate 1 functions as a spacer. Thereby, even when the substrate 1 and the transfer substrate 20g are overlapped, the hole supply layer (organic layer) 13 on the lower electrode 5 on the substrate 1 side and the light-emitting transfer layer 15G on the transfer substrate 20g side are interposed. A vacuum state space is formed.

In this state, as shown in FIG. 9, the laser beam Lh, for example, is applied as an energy beam to the photothermal conversion layer 23 from the transfer substrate 20g ′ side. At this time, only the portion corresponding to the green light emitting pixel a (G) is selectively irradiated with the laser light Lh, and heat is generated in the laser light Lh irradiation portion of the photothermal conversion layer 23. As the laser light Lh, for example, a semiconductor laser light having a wavelength of 800 nm is used, and the irradiation conditions are, for example, 0.3 mW / μm ² and a scanning speed of 250 mm / sec. Then, the portion of the light emitting transfer layer 15G corresponding to the irradiated portion of the laser light Lh is thermally transferred to the pixel a (G) portion on the substrate 1 side, and the green light emitting layer 15g as an organic transfer pattern is formed above the lower electrode 5 of the substrate 1. The pattern is formed.

  After that, as shown in FIG. 10, the laser beam Lh is selectively irradiated from the same transfer substrate 20g ′ side to the hole pattern 23a portion of the photothermal conversion layer 23 formed on the transfer substrate 20g ′. As a result, the laser beam Lh is irradiated to the auxiliary electrode 5a at the bottom of the connection hole 7b formed in the isolation insulating film 7 on the substrate 1 side through the hole pattern 23a, and the laser beam Lh is irradiated by photothermal conversion at the auxiliary electrode 7a. Generate heat in the part. Then, the organic layer on the auxiliary electrode 7a corresponding to the irradiated portion of the laser beam Lh, that is, the hole supply layer 13, is sublimated and removed.

  After the organic layer is removed, the overlapping substrate 1 and the transfer substrate 20g 'are separated.

  Note that the transfer step of the green light emitting layer 15g and the removal step of the hole supply layer (organic layer) 13 performed by superposing the same transfer substrate 20g ′ on the substrate 1 may be performed first. good.

  In the subsequent steps, the same procedure as that described in the first embodiment with reference to FIGS. 2 to 5 may be performed.

  That is, first, as shown in FIG. 11A, a red light emitting layer 15r is formed as an organic transfer pattern above the lower electrode 5 in the red pixel a (R) by a transfer method using a transfer substrate 20r.

  At this time, first, a transfer substrate 20r is prepared. This transfer substrate 20r uses a light emitting transfer layer 15R containing a red light emitting material instead of the light emitting transfer layer (15G) containing a green light emitting material in the transfer substrate used when transferring the green light emitting layer 15g. It may be a configuration. The light emitting transfer layer 15R containing the red light emitting material is formed with a film thickness of, for example, 30 nm. The red light emitting material used here may be fluorescent or phosphorescent. In addition to the red light emitting material, the light emitting transfer layer 15R includes at least one of a hole transporting material, an electron transporting material, and both charge transporting materials. Such a light-emitting transfer layer 15R is made of, for example, di (2-naphthyl) anthracene (ADN), 2,6≡bis [(4′≡methoxydiphenylamino) styryl] ≡1,5≡dicyanonaphthalene, which is a red light emitting material. It is assumed that it is composed of 30% by weight of (BSN).

  The transfer using the transfer substrate 20r having the above-described configuration may be performed in the same manner as the transfer using the green transfer substrate 20g. That is, first, in a vacuum atmosphere, the substrate 1 on which the green light emitting layer 15g is formed and the transfer substrate 20r are overlapped with the hole supply layer (organic layer) 13 and the light emitting transfer layer 15R facing each other. . At this time, the isolation insulating film 7 on the substrate 1 functions as a spacer. Accordingly, even when the substrate 1 and the transfer substrate 20r are overlapped, the hole supply layer (organic layer) 13 on the lower electrode 5 on the substrate 1 side and the light-emitting transfer layer 15G on the transfer substrate 20r side are interposed. Similarly, a vacuum space is formed.

In this state, the laser beam Lh, for example, is applied as an energy ray to the photothermal conversion layer 23 from the transfer substrate 20r side. At this time, only the portion corresponding to the red light emitting pixel a (R) is selectively irradiated with the laser light Lh, and heat is generated in the laser light Lh irradiation portion of the photothermal conversion layer 23. As the laser light Lh, for example, a semiconductor laser light having a wavelength of 800 nm is used, and the irradiation conditions are, for example, 0.3 mW / μm ² and a scanning speed of 250 mm / sec. Then, the portion of the light emitting transfer layer 15R corresponding to the irradiated portion of the laser light Lh is thermally transferred to the pixel a (R) portion on the substrate 1 side, and the red light emitting layer 15r as an organic transfer pattern is formed above the lower electrode 5 of the substrate 1. The pattern is formed.

  After the transfer, the overlapping substrate 1 and transfer substrate 20r are separated.

  The pattern formation by transferring the green light emitting layer 15g and the removal of the hole supply layer 13 on the auxiliary electrode 5a and the pattern formation by transferring the red light emitting layer 15r may be performed first. Further, when the red light emitting layer 15r is transferred, a transfer substrate having a photothermal conversion layer having a hole pattern is used to form a pattern by transferring the red light emitting layer 15r and the hole supply layer 13 on the auxiliary electrode 5a. The removal may be performed through the same transfer substrate.

  Next, as shown in FIG. 11B, a blue light emitting layer 15b and an electron transporting layer 17 are formed in this order on the entire surface of the substrate 1 including the blue pixel a (B). The blue light emitting layer 15b and the electron transport layer 17 are formed by vapor deposition. Further, the blue light emitting layer 15b as an organic layer formed on the entire surface of the substrate 1 in this way is a layer for adjusting the resonance film thickness in the red pixel a (R) and the green pixel a (G). Functioning is the same as in the first embodiment.

  After the above, as shown in FIG. 12, a film thickness adjusting layer 19 for adjusting the resonant film thickness is formed above the electron transport layer 17 in the blue pixel a (B) by the transfer method using the transfer substrate 30. As an organic transfer pattern, subsequently, as shown in FIG. 13, the organic layer on the auxiliary electrode 7a, that is, the blue light emitting layer 15b and the electron transport layer 17 are sublimated and removed.

  In the same manner as described with reference to FIGS. 3 and 4 in the first embodiment, these steps are performed twice through one transfer substrate 30 having the photothermal conversion layer 23 having the hole pattern 23a. This is performed by irradiation with the laser beam Lh.

  After the organic layer is removed, the overlapping substrate 1 and transfer substrate 30 are separated.

  It should be noted that either the film thickness adjusting layer transfer step or the organic layer removal step, which is performed by superimposing the same transfer substrate 30 on the substrate 1, may be performed first.

  Further, the photothermal conversion layer 23 of the transfer substrate 30 and the auxiliary electrode 7a used as the photothermal conversion layer when removing the organic layers (the blue light emitting layer 15b and the electron transport layer 17) are made of Cr which is the same material. You can also. For this reason, by extending the irradiation range of the laser beam Lh for pattern transfer of the film thickness adjusting layer 19 shown in FIG. 12 to the auxiliary electrodes 7a on both sides, this portion of the laser beam Lh can be irradiated by one irradiation. The organic layer can also be removed as in the first embodiment.

  After the above, as shown in FIG. 14, the film thickness adjusting layer 19 is pattern-transferred, and the upper electrode 41 common to each pixel a is formed on the substrate 1 from which the organic layer on the auxiliary electrode 5a has been removed, The upper electrode 41 is brought into contact with the auxiliary electrode 5a exposed at the bottom of the connection hole 7b. The upper electrode 41 is used as, for example, a cathode of an organic electroluminescence device. The upper electrode 41 and the lower electrode 5 are organic material layers including light emitting layers 15a, 15g, and 15b of each color made of an organic material. The organic electroluminescence element EL for emitting each color is formed in the sandwiched portion. Furthermore, an insulating or conductive protective film 43 is provided on the upper electrode 41, and a glass substrate is fixed on the protective film 43 with an ultraviolet curable resin as necessary to complete the display device 45.

  In the third embodiment as described above, as described with reference to FIG. 10, the hole pattern 23a is provided in the photothermal conversion layer 23 of the transfer substrate 20g ′ used for forming the green light emitting layer 15g, and the hole pattern 25a is interposed therebetween. In this configuration, the hole supply layer (organic layer) 13 on the auxiliary electrode 5a is removed by irradiation with all the laser beams Lh. For this reason, when the film thickness adjusting layer (organic transfer pattern) 19a is formed as described with reference to FIG. 12, the auxiliary electrode 5a is exposed by irradiation with the laser light Lh through the same transfer substrate 30. In other words, the hole supply layer (organic layer) 13 has already been removed from the auxiliary electrode 5a.

  In other words, the removal of the organic layer by the laser beam Lh irradiation for exposing the auxiliary electrode 5a is performed in two steps, so that the laser intensity required at one time can be reduced, and particularly on the substrate 1 side. Damage to the electrode 5a can be suppressed.

<Fourth embodiment>
15 and 16 are cross-sectional process diagrams showing the characteristic part of the manufacturing method of the fourth embodiment. The fourth embodiment is an embodiment in which the second embodiment and the third embodiment are combined.

  First, the process is performed until the hole supply layer (organic layer) 13 is formed on the entire surface of the substrate 1 in the same procedure as described with reference to FIG.

  Thereafter, a step of forming a green light emitting layer as an organic transfer pattern above the electron transport layer 17 in the green-blue pixel a (G) is performed. This step is characteristic in the fourth embodiment.

  That is, first, as shown in FIG. 15, a transfer substrate 20g ″ characteristic of the fourth embodiment is prepared. This transfer substrate 20 ″ is a green pixel on a light-transmitting substrate 21 made of glass or plastic material. The photothermal conversion layer 23 is patterned in a portion corresponding to a (B). The photoelectric conversion layer 23 is made of a chromium (Cr) film having a film thickness of 200 nm formed by a sputtering method, and is patterned by etching using, for example, a resist pattern formed by a lithography method.

  A characteristic is that the light reflection layer 35 is patterned in the same layer as the photothermal conversion layer 23. The light reflecting layer 35 may be made of, for example, a material that reflects a laser beam as an energy ray to be used later, and is made of, for example, Ag, Al, or an alloy mainly containing these metals. The light reflection layer 35 is characterized in that, for example, a hole pattern 35a and an opening window 35b are provided by etching using a resist pattern formed by a lithographic method as a mask. Among these holes, the hole pattern 35a is provided at a position corresponding to the connection hole 7a formed in the isolation insulating film 7 on the substrate 1 side. The opening window 35b is provided in a portion corresponding to the green pixel a (G). The photothermal conversion layer 23 is arranged in the opening window 35b. It is assumed that the hole pattern 23a is also provided at a position corresponding to the connection hole 7a between the photothermal conversion layer 23 and between the photothermal conversion layer 23 and the light reflection layer 35.

  A silicon nitride film (SiNx) is formed as a protective layer 25 with a thickness of 90 nm on the light-to-heat conversion layer 23 and the light reflection layer 35 having such hole patterns 23a and 35a by the CVD method. On the protective layer 25, a light emitting transfer layer 15G containing a green light emitting material is formed with a film thickness of 25 nm. The green light emitting material used here may be fluorescent or phosphorescent. In addition to the green light emitting material, the light emitting transfer layer 15G includes at least one of a hole transporting material, an electron transporting material, and a charge transporting material. Such a light-emitting transfer layer 15G is composed of, for example, a mixture of di (2-naphthyl) anthracene (ADN) and 5% by weight of coumarin 6 as a green light-emitting material.

  The transfer using the transfer substrate 20g ″ having the above configuration is performed as follows. First, in a vacuum atmosphere, the substrate 1 and the transfer substrate 20 ″ are emitted from the hole supply layer (organic layer) 13 and the light emission. The transfer layers 15G are overlapped with each other facing each other. At this time, the isolation insulating film 7 on the substrate 1 functions as a spacer. Thereby, even when the substrate 1 and the transfer substrate 20g are overlapped, the hole supply layer (organic layer) 13 on the lower electrode 5 on the substrate 1 side and the light-emitting transfer layer 15G on the transfer substrate 20g side are interposed. A vacuum state space is formed.

In this state, as shown in FIG. 16, the entire surface of the transfer substrate 20g ″ is irradiated with, for example, laser light Lh as energy rays. The laser light Lh is absorbed by the photothermal conversion layer 23 and the auxiliary wiring 5a to generate heat. And a wavelength having a high reflectance with respect to the light reflection layer 35. As such laser light Lh, for example, a semiconductor laser light having a wavelength of 800 nm is used, and irradiation conditions are, for example, 0.3 mW / μm ² and a scanning speed of 250 mm / Thus, in the portion where the photothermal conversion layer 23 is disposed, the green light-emitting transfer layer 15G is thermally transferred to the pixel a (B) portion on the substrate 1 side as a transfer light-emitting layer (organic transfer pattern) 15g. Further, since the laser beam Lh is reflected at the portion where the light reflecting layer 35 is disposed, the transfer of the light emitting transfer layer 15G does not occur. In the portion where the gates 23a and 35a are arranged, the auxiliary electrode 5a at the bottom of the connection hole 7b formed in the separation insulating film 7 on the substrate 1 side is irradiated with the laser light Lh via the hole patterns 23a and 35a. Heat is generated in the laser light Lh irradiation part by photothermal conversion at the auxiliary electrode 7a, and the organic layer on the auxiliary electrode 7a corresponding to the laser light Lh irradiation part, that is, the hole supply layer 13 is sublimated and removed. .

  After the organic layer is removed, the overlapping substrate 1 and the transfer substrate 20g ″ are separated.

  Thereafter, the display device 45 is completed by performing the same steps as those described in the third embodiment with reference to FIGS.

  In the fourth embodiment as described above, as described with reference to FIG. 16, the irradiation with the laser beam Lh for forming the green light emitting layer (organic transfer pattern) 15g on the substrate 1 is already formed. The laser beam Lh for selectively removing the organic layer (hole supply layer 13) from the auxiliary electrode 5a is simultaneously performed via one transfer substrate 29g ". Compared with the embodiment, the throughput can be further improved.

<Application example>
The display device obtained by the manufacturing method according to the present invention described above includes various electronic devices shown in FIGS. 17 to 21, such as a digital camera, a notebook personal computer, a mobile terminal device such as a mobile phone, a video camera, etc. The present invention can be applied to display devices of electronic devices in various fields that display video signals input to electronic devices or video signals generated in electronic devices as images or videos. An example of an electronic device to which the present invention is applied will be described below.

  FIG. 17 is a perspective view showing a television to which the present invention is applied. The television according to this application example includes a video display screen unit 101 including a front panel 102, a filter glass 103, and the like, and is created by using the display device according to the present invention as the video display screen unit 101.

  18A and 18B are diagrams showing a digital camera to which the present invention is applied. FIG. 18A is a perspective view seen from the front side, and FIG. 18B is a perspective view seen from the back side. The digital camera according to this application example includes a light emitting unit 111 for flash, a display unit 112, a menu switch 113, a shutter button 114, and the like, and is manufactured by using the display device according to the present invention as the display unit 112.

  FIG. 19 is a perspective view showing a notebook personal computer to which the present invention is applied. A notebook personal computer according to this application example includes a main body 121 including a keyboard 122 that is operated when characters and the like are input, a display unit 123 that displays an image, and the like. It is produced by using.

  FIG. 20 is a perspective view showing a video camera to which the present invention is applied. The video camera according to this application example includes a main body 131, a lens 132 for shooting an object on a side facing forward, a start / stop switch 133 at the time of shooting, a display unit 134, and the like. It is manufactured by using such a display device.

  FIG. 21 is a diagram showing a mobile terminal device to which the present invention is applied, for example, a mobile phone, in which (A) is a front view in an opened state, (B) is a side view thereof, and (C) is in a closed state. (D) is a left side view, (E) is a right side view, (F) is a top view, and (G) is a bottom view. The mobile phone according to this application example includes an upper housing 141, a lower housing 142, a connecting portion (here, a hinge portion) 143, a display 144, a sub display 145, a picture light 146, a camera 147, and the like. And the sub display 145 is manufactured by using the display device according to the present invention.

FIG. 6 is a cross-sectional process diagram (part 1) illustrating the method for manufacturing the display device according to the first embodiment; FIG. 4 is a sectional process diagram (part 2) of the method for manufacturing the display device of the first embodiment. FIG. 6 is a sectional process diagram (part 3) of the method for manufacturing the display device of the first embodiment; FIG. 6 is a cross-sectional process diagram (part 4) illustrating the method for manufacturing the display device of the first embodiment; FIG. 9 is a sectional process diagram (part 5) illustrating the method for manufacturing the display device according to the first embodiment; It is sectional process drawing (the 1) about the manufacturing method of the display apparatus of 2nd Embodiment. It is sectional process drawing (the 2) about the manufacturing method of the display apparatus of 2nd Embodiment. It is sectional drawing (the 1) about the manufacturing method of the display apparatus of 3rd Embodiment. It is sectional process drawing (the 2) about the manufacturing method of the display apparatus of 3rd Embodiment. It is sectional process drawing (the 3) about the manufacturing method of the display apparatus of 3rd Embodiment. It is sectional process drawing (the 4) about the manufacturing method of the display apparatus of 3rd Embodiment. It is sectional process drawing (the 5) about the manufacturing method of the display apparatus of 3rd Embodiment. It is sectional process drawing (the 6) about the manufacturing method of the display apparatus of 3rd Embodiment. It is sectional process drawing (the 7) about the manufacturing method of the display apparatus of 3rd Embodiment. It is sectional process drawing (the 1) about the manufacturing method of the display apparatus of 4th Embodiment. It is sectional process drawing (the 2) about the manufacturing method of the display apparatus of 4th Embodiment. It is a perspective view which shows the television to which this invention is applied. It is a figure which shows the digital camera to which this invention is applied, (A) is the perspective view seen from the front side, (B) is the perspective view seen from the back side. 1 is a perspective view showing a notebook personal computer to which the present invention is applied. It is a perspective view which shows the video camera to which this invention is applied. BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows the portable terminal device to which this invention is applied, for example, a mobile telephone, (A) is the front view in the open state, (B) is the side view, (C) is the front view in the closed state , (D) is a left side view, (E) is a right side view, (F) is a top view, and (G) is a bottom view.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Board | substrate, 5 ... Lower electrode, 5a ... Auxiliary electrode, 7 ... Isolation insulation film, 7a ... Pixel opening, 7b ... Connection hole, 13 ... Hole supply layer (organic layer), 15b ... Blue light emitting layer (organic layer) ), 15r, 15g, 15b ... light emitting layer, 17 ... electron transport layer (organic layer), 19a ... organic transfer pattern, 21 ... light transmissive substrate, 23 ... photothermal conversion layer, 23a, 35a ... hole pattern, 35b ... Opening window, organic transfer layer, 20g ', 20g ", 30, 32 ... transfer substrate, 35 ... light reflection layer, 41 ... upper electrode, 45 ... display device, Lh ... laser beam (energy beam)

Claims (11)

A first step of forming a pattern on the substrate while maintaining insulation between the lower electrode and the auxiliary electrode;
A second step of forming an organic layer on the substrate on which the lower electrode and the auxiliary electrode are formed;
A transfer substrate provided with a light-to-heat conversion layer provided with a hole pattern and an organic transfer layer above this is prepared, and the organic transfer layer and the organic layer are opposed to each other, and the hole pattern and the auxiliary electrode are opposed to each other. And a third step of superimposing the transfer substrate and the substrate,
A fourth step of forming an organic transfer pattern by thermally transferring the organic transfer layer on the photothermal conversion layer onto the lower electrode by irradiating the photothermal conversion layer with energy rays from the transfer substrate side;
A fifth step of removing the organic layer on the auxiliary electrode by irradiating the auxiliary electrode with energy rays from the transfer substrate side through the hole pattern;
And a sixth step of forming an upper electrode on the substrate while being laminated on the organic transfer pattern and in contact with the auxiliary electrode. After the first step and before the second step,
The method for manufacturing a display device according to claim 1, wherein a step of forming an isolation insulating film having a pixel opening exposing the lower electrode and a connection hole exposing the auxiliary electrode on the substrate is performed. In the third step, the transfer substrate and the substrate are overlapped so that the connection hole of the isolation insulating film and the hole pattern are opposed to each other.
The method for manufacturing a display device according to claim 2, wherein in the fifth step, the organic layer on the auxiliary electrode exposed at the bottom of the connection hole is removed. The organic transfer pattern formed in the fourth step constitutes an uppermost part of a layer made of an organic material sandwiched between the lower electrode and the upper electrode. The manufacturing method of the display apparatus as described in 2. The display device according to claim 1, wherein the organic transfer pattern formed in the fourth step is a film thickness adjusting layer for adjusting a distance between the lower electrode and the upper electrode. Manufacturing method. The method for manufacturing a display device according to claim 1, wherein the organic transfer pattern formed in the fourth step includes a light emitting layer. A light reflecting layer having a hole pattern and an opening window is provided below the organic transfer layer in the transfer substrate,
The method for manufacturing a display device according to claim 1, wherein the photothermal conversion layer is provided at least in an opening window of the light reflection layer. In the third step, the transfer substrate and the substrate are overlapped in a state where the hole pattern of the reflective layer and the term pattern of the photothermal conversion layer are opposed to the auxiliary electrode,
The method for manufacturing a display device according to claim 7, wherein the irradiation of energy rays in the fourth step and the fifth step is performed collectively from the transfer substrate side. The display device manufacturing method according to claim 8, wherein the photothermal conversion layer and the auxiliary electrode have comparable photothermal conversion efficiency. A light transmissive substrate;
A photothermal conversion layer provided on the substrate with a hole pattern;
A transfer substrate comprising: an organic transfer layer provided on the substrate via the photothermal conversion layer. Between the substrate and the organic transfer layer, a light reflection layer having a hole pattern and an opening window is provided,
The transfer substrate according to claim 10, wherein the photothermal conversion layer is provided at least in an opening window of the light reflecting layer.

Images