JP2009146715A - Donor substrate, and manufacturing method for display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a donor substrate capable of reducing the number of transfer, and a manufacturing method for an organic light-emitting element using the donor substrate. <P>SOLUTION: A partition 42 is provided on the donor substrate 40. A red color transfer layer 50R, a green color transfer layer 50G, and a blue color transfer layer 50B including light-emitting materials with various colors are formed on each zone partitioned by partitions 42, and all light-emitting layers of red color, green color, and blue color are formed on a transfer substrate by one transfer. When a width of the zone partitioned by the partition 42 is set up to be Wd and a width of a light-emitting zone 13C on the transfer substrate 11 is set up to be Ws, sections only where film thickness of the red color transfer layer 50R, the green color transfer layer 50G, and the blue color transfer layer 50B is uniform are transferred by satisfying the relationship of Wd>Ws. Furthermore, when a width of a light-heat conversion layer 43 is set up to be Wt, it is preferable that the relationship of Ws<Wt<Wd is satisfied. A laser beam LB can be irradiated on the whole surface of the donor substrate 40. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a donor substrate for forming a light emitting layer of an organic light emitting element by a transfer method and a method for manufacturing a display device using the donor substrate.

  2. Description of the Related Art In recent years, next-generation display devices have been actively developed, and an organic light-emitting element (organic EL (Electroluminescence) element) in which a first electrode, a plurality of organic layers including a light-emitting layer, and a second electrode are sequentially stacked on a driving substrate. An organic light emitting display device using the above has attracted attention. Since the organic light emitting display device is a self-luminous type, it has a wide viewing angle and does not require a backlight, so that it can be expected to save power, has high responsiveness, and can reduce the thickness of the device. Therefore, application to a large screen display device such as a television is strongly desired.

  In order to increase the size and productivity of such an organic light emitting display device, the use of a larger mother glass is being studied. At that time, in a method for forming a light emitting layer using a general metal mask, a light emitting material is deposited or applied through a metal mask having an opening pattern on a metal sheet, thereby patterning the R, G, and B light emitting layers. Therefore, it is necessary to enlarge the metal mask corresponding to the large substrate.

  However, due to the increase in the size of the metal mask, the deflection due to the weight of the mask and the thermal expansion during vapor deposition become significant, and the accuracy of the opening pattern of the metal mask itself decreases due to the increase in size. There is a problem that it will not be possible to obtain. In addition, damage to elements due to contact between the metal mask and the substrate, and defect defects due to foreign matters on the mask, etc., become serious as the size increases. For this reason, there is a need for a patterning technique that does not require a metal mask.

  As one of maskless patterning methods for large substrates, there is an ink jet method described in Patent Document 1. The inkjet method is a cost-effective method that does not require a vacuum facility, but has a problem in forming an element having a laminated structure. For example, when a first layer is deposited on a substrate on which a first layer has been formed by directly applying wet coating such as inkjet, the deposited layer is dissolved by the ink, so that an interlayer interface of the laminated structure is formed. There is a risk that the device characteristics will be greatly deteriorated. In order to prevent mutual dissolution between the upper and lower layers, for example, by depositing an oil-soluble material layer on a water-soluble material layer, stacking may be possible. Is greatly restricted, which hinders improvement of characteristics. In addition, the dried light emitting layer tends to become extremely thick or thin in the vicinity of the insulating layer around the pixel, and uneven brightness or chromaticity due to non-uniform film thickness within the pixel or current density distribution. There is also a problem that power consumption increases due to a decrease in device life or light extraction efficiency due to bias.

As another process for large substrates, there is a transfer method using radiation such as laser. In the transfer method, a donor element in which a transfer layer containing a luminescent material is formed on a support material is formed, and this donor element is placed opposite to a transfer substrate for forming an organic light emitting element, and radiation is emitted in a reduced pressure environment. In this method, the transfer layer is transferred to the transfer substrate by irradiation (see, for example, Patent Document 2 and Patent Document 3). The laser transfer method has two advantages over the conventional mask vapor deposition method in that high definition is possible and a large substrate can be used. Establishment of manufacturing technology for large substrates is considered essential for mass production of large-sized organic EL TVs, but the laser transfer method can keep the patterning accuracy constant even for large substrates. , Has become one of the leading candidates.
JP 1998-12377 A JP 2002-110350 A Special Table 2002-53482 JP 2004-87143 A

  However, in the conventional transfer methods described in Patent Document 2 and Patent Document 3, a transfer process is performed for each color of R, G, and B using donor elements of colors of R, G, and B. In general, at least three donor elements and three transfer steps are required in the manufacturing process for the substrate, which causes a decrease in production efficiency and an increase in cost due to an increase in the number of steps.

  Incidentally, Patent Document 4 discloses a method of forming R, G, B transfer layer patterns on donor elements in advance and forming multicolor light emitting layers by batch transfer in order to reduce the number of transfers. ing. However, in this method, when the R, G, B transfer layer is wet-formed on the donor element, the transfer layer on the donor element is formed in the same manner as when the light emitting layer is directly formed by the inkjet method described above. If the film is transferred as it is, the film thickness of the transferred light emitting layer becomes non-uniform and there is room for further improvement.

  The present invention has been made in view of such problems, and an object thereof is to provide a donor substrate capable of reducing the number of times of transfer and a method of manufacturing a display device using the donor substrate.

  The donor substrate according to the present invention is formed by forming a transfer layer containing a light emitting material, irradiating the transfer layer with the transfer layer facing the transfer substrate, sublimating or vaporizing the transfer layer, and transferring the transfer layer to the transfer substrate. A light emitting layer for forming a light emitting layer, comprising: a rigid support substrate; and a partition provided on the support substrate corresponding to a region where the light emitting layer is to be formed on the transfer substrate. It is.

  According to the display device manufacturing method of the present invention, a driving substrate includes a first electrode, an insulating layer having an opening corresponding to a light emitting region of the first electrode, a plurality of organic layers including the light emitting layer, and a second electrode. The organic light-emitting element is formed in order, and a step of forming a first substrate, an insulating layer, and a part of a plurality of organic layers on a driving substrate to form a substrate to be transferred, and light emission on a donor substrate Forming a light-emitting layer by forming a transfer layer containing a material, irradiating the transfer layer with the transfer layer facing the transfer substrate, irradiating the transfer layer, sublimating or vaporizing the transfer layer, and transferring to the transfer substrate; A step of forming the remainder of the plurality of organic layers and the second electrode, and using the donor substrate of the present invention as a donor substrate.

  In the donor substrate of the present invention, a partition wall is provided on a support substrate corresponding to a region (light emitting region) where a light emitting layer is desired to be formed on the transferred substrate. Therefore, it is possible to form a transfer layer containing a light emitting material of a different color for each region divided by the partition on the support substrate, and to form a light emitting layer of two or more colors on the substrate to be transferred by one transfer. .

  According to the donor substrate of the present invention, the partition wall is provided on the support substrate corresponding to the region (light emission region) on which the light emitting layer is to be formed on the transfer substrate. A transfer layer including a light emitting material having a different color for each region can be formed. Therefore, when a display device is manufactured using this donor substrate, it is possible to form light emitting layers of two or more colors on the substrate to be transferred in one transfer, and the number of transfers can be reduced.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

(Display device)
FIG. 1 shows a configuration of a display device according to an embodiment of the present invention. This display device is used as an ultra-thin organic light emitting color display device or the like. For example, a plurality of organic light emitting elements 10R, 10G, and 10B described later are arranged in a matrix on a driving substrate 11 made of glass. A display area 110 is formed, and a signal line driving circuit 120 and a scanning line driving circuit 130 which are drivers for displaying images are formed around the display area 110.

  A pixel drive circuit 140 is formed in the display area 110. FIG. 2 illustrates an example of the pixel driving circuit 140. The pixel driving circuit 140 is formed below the first electrode 13 to be described later, and includes a driving transistor Tr1 and a writing transistor Tr2, a capacitor (holding capacitor) Cs therebetween, a first power supply line (Vcc), and a second power source line (Vcc). This is an active drive circuit having an organic light emitting element 10R (or 10G, 10B) connected in series to the drive transistor Tr1 between power supply lines (GND). The driving transistor Tr1 and the writing transistor Tr2 are configured by a general thin film transistor (TFT (Thin Film Transistor)), and the configuration may be, for example, an inverted staggered structure (so-called bottom gate type) or a staggered structure (top gate type). There is no particular limitation.

  In the pixel driving circuit 140, a plurality of signal lines 120A are arranged in the column direction, and a plurality of scanning lines 130A are arranged in the row direction. An intersection between each signal line 120A and each scanning line 130A corresponds to one of the organic light emitting elements 10R, 10G, and 10B (sub pixel). Each signal line 120A is connected to the signal line drive circuit 120, and an image signal is supplied from the signal line drive circuit 120 to the source electrode of the write transistor Tr2 via the signal line 120A. Each scanning line 130A is connected to the scanning line driving circuit 130, and a scanning signal is sequentially supplied from the scanning line driving circuit 130 to the gate electrode of the writing transistor Tr2 via the scanning line 130A.

  FIG. 3 illustrates an example of a planar configuration of the display area 110. In the display area 110, an organic light emitting element 10R that generates red light, an organic light emitting element 10G that generates green light, and an organic light emitting element 10B that generates blue light are sequentially formed in a matrix. Has been. The organic light emitting elements 10R, 10G, and 10B have a rectangular planar shape, and constitute a red element row 110R, a green element row 110G, and a blue element row 110B arranged in the longitudinal direction (column direction) for each color. The red element column 110R, the green element column 110G, and the blue element column 110B are sequentially arranged in the row direction in the display region 110. A combination of adjacent organic light emitting elements 10R, 10G, and 10B constitutes one pixel (pixel) 10. The pixel pitch is, for example, 300 μm.

  FIG. 4 illustrates a cross-sectional configuration of the organic light emitting devices 10R, 10G, and 10B illustrated in FIG. The organic light emitting devices 10R, 10G, and 10B are respectively anodes from the side of the driving substrate 11 with the driving transistor (not shown) and the planarization insulating film (not shown) of the pixel driving circuit 140 described above in between. The first electrode 13 as an insulating layer, the insulating layer 14, the organic layer 15 including a light emitting layer 15C described later, and the second electrode 16 as a cathode are stacked in this order.

  Such organic light-emitting elements 10R, 10G, and 10B are covered with a protective film 17 such as silicon nitride (SiNx), and further, a sealing substrate 30 made of glass or the like with an adhesive layer 20 in between the protective film 17. Is sealed by being bonded over the entire surface.

  The first electrode 13 is made of, for example, ITO (indium / tin composite oxide) or IZO (indium / zinc composite oxide). Moreover, you may comprise the 1st electrode 13 with a reflective electrode. In that case, the first electrode 13 has a thickness of, for example, 100 nm or more and 1000 nm or less, and it is desirable that the first electrode 13 has a reflectivity as high as possible in order to increase luminous efficiency. For example, the material constituting the first electrode 13 is a metal such as chromium (Cr), gold (Au), platinum (Pt), nickel (Ni), copper (Cu), tungsten (W), or silver (Ag). An elemental element or an alloy is mentioned.

  The insulating layer 14 is used to ensure insulation between the first electrode 13 and the second electrode 16 and to accurately form the light emitting region in a desired shape. For example, the insulating layer 14 is made of a photosensitive resin such as silicon oxide or polyimide. Has been. The insulating layer 14 is provided with an opening corresponding to the light emitting region 13A of the first electrode 13, and also functions as a partition on the driving substrate 11 side corresponding to a partition 42 of the donor substrate 40 described later. Have. The organic layer 15 and the second electrode 16 may be continuously provided not only on the light emitting region 13A but also on the insulating layer 14, but light emission occurs only in the opening of the insulating layer 14. .

The organic layer 15 has a structure in which a hole injection layer and a hole transport layer 15AB, a light emitting layer 15C, an electron transport layer and an electron transport layer 15DE are stacked in this order from the first electrode 13 side. A layer other than 15C may be provided as necessary. The organic layer 15 may have a different configuration depending on the emission color of the organic light emitting elements 10R, 10G, and 10B. The hole injection layer is a buffer layer for improving hole injection efficiency and preventing leakage. The hole transport layer is for increasing the efficiency of transporting holes to the light emitting layer 15C. The light emitting layer 15C generates light by applying an electric field to recombine electrons and holes. The electron transport layer is for increasing the efficiency of electron transport to the light emitting layer 15C. The electron injection layer has a thickness of about 0.3 nm, for example, and is made of LiF, Li ₂ O, or the like. In FIG. 4, the hole injection layer and the hole transport layer are one layer (hole injection layer and hole transport layer 15AB), and the electron transport layer and the electron injection layer are one layer (electron transport layer and electron injection layer 15DE). Represents.

The hole injection layer of the organic light emitting device 10R has, for example, a thickness of 5 nm to 300 nm, and 4,4 ′, 4 ″ -tris (3-methylphenylphenylamino) triphenylamine (m-MTDATA) or 4, It is composed of 4 ′, 4 ″ -tris (2-naphthylphenylamino) triphenylamine (2-TNATA). The hole transport layer of the organic light emitting element 10R has, for example, a thickness of 5 nm to 300 nm and is made of bis [(N-naphthyl) -N-phenyl] benzidine (α-NPD). The light emitting layer 15C of the organic light emitting element 10R has, for example, a thickness of 10 nm or more and 100 nm or less, and 2,10≡bis [4′≡methoxydiphenylamino) to 9,10-di- (2-naphthyl) anthracene (ADN). Stylyl] ≡1,5≡dicyanonaphthalene (BSN) mixed at 30% by weight. The electron transport layer of the organic light emitting element 10R has, for example, a thickness of 5 nm to 300 nm and is made of 8≡hydroxyquinoline aluminum (Alq ₃ ).

The hole injection layer of the organic light emitting element 10G has a thickness of 5 nm to 300 nm, for example, and is made of m-MTDATA or 2-TNATA. The hole transport layer of the organic light emitting element 10G has, for example, a thickness of 5 nm or more and 300 nm or less, and is configured by α-NPD. The light emitting layer 15C of the organic light emitting element 10G has, for example, a thickness of 10 nm to 100 nm, and is configured by mixing 5% by volume of coumarin 6 with ADN. The electron transport layer of the organic light emitting element 10G has, for example, a thickness of 5 nm to 300 nm and is made of Alq ₃ .

The hole injection layer of the organic light emitting element 10B has, for example, a thickness of 5 nm to 300 nm and is made of m-MTDATA or 2-TNATA. The hole transport layer of the organic light emitting device 10B has, for example, a thickness of 5 nm to 300 nm and is made of α-NPD. The light emitting layer 15C of the organic light emitting device 10B has, for example, a thickness of 10 nm or more and 100 nm or less, and 4,4′≡bis [2≡ {4≡ (N, N≡diphenylamino) phenyl} vinyl] biphenyl (DPAVBi ) Is mixed with 2.5% by weight. The electron transport layer of the organic light emitting element 10B has, for example, a thickness of 5 nm to 300 nm and is made of Alq ₃ .

  For example, the second electrode 16 has a thickness of 5 nm or more and 50 nm or less, and is made of a single element or alloy of a metal element such as aluminum (Al), magnesium (Mg), calcium (Ca), or sodium (Na). Among these, an alloy of magnesium and silver (MgAg alloy) or an alloy of aluminum (Al) and lithium (Li) (AlLi alloy) is preferable.

The protective film 17 is for preventing moisture and the like from entering the organic layer 15 and is made of a material having low permeability and water absorption and has a sufficient thickness. Further, the protective film 17 is made of a material having a high transmittance with respect to the light generated in the light emitting layer 15C and having a transmittance of, for example, 80% or more. Such a protective film 17 has a thickness of about 2 μm to 3 μm, for example, and is made of an inorganic amorphous insulating material. Specifically, amorphous silicon (α-Si), amorphous silicon carbide (α-SiC), amorphous silicon nitride (α-Si _1-x N _x ), and amorphous carbon (α-C) are preferable. Since these inorganic amorphous insulating materials do not constitute grains, the water permeability is low and a good protective film 17 is obtained. The protective film 17 may be made of a transparent conductive material such as ITO.

  The adhesive layer 20 is made of, for example, a thermosetting resin or an ultraviolet curable resin.

  The sealing substrate 30 is positioned on the second electrode 16 side of the organic light emitting elements 10R, 10G, and 10B, and seals the organic light emitting elements 10R, 10G, and 10B together with the adhesive layer 20, and emits organic light. It is made of a material such as glass that is transparent to the light generated by the elements 10R, 10G, and 10B. The sealing substrate 30 is provided with, for example, a color filter (not shown), and extracts light generated in the organic light emitting elements 10R, 10G, and 10B, and the organic light emitting elements 10R, 10G, and 10B, and a portion therebetween. The external light reflected by the wiring may be absorbed to improve the contrast.

  The color filter may be provided on either side of the sealing substrate 30, but is preferably provided on the organic light emitting element 10R, 10G, or 10B side. This is because the color filter is not exposed on the surface and can be protected by the adhesive layer 20. In addition, since the distance between the light emitting layer 15C and the color filter is narrowed, it is possible to prevent the light emitted from the light emitting layer 15C from entering the adjacent color filters of the adjacent colors and causing color mixing. is there. The color filter has a red filter, a green filter, and a blue filter (all not shown), and is sequentially arranged corresponding to the organic light emitting elements 10R, 10G, and 10B.

  Each of the red filter, the green filter, and the blue filter is, for example, rectangular and has no gap. These red filter, green filter and blue filter are each composed of a resin mixed with a pigment, and by selecting the pigment, the light transmittance in the target red, green or blue wavelength region is high, The light transmittance in the wavelength range is adjusted to be low.

(Donor substrate)
Next, a donor substrate used in the method for manufacturing the display device will be described.

  FIG. 5 shows the configuration of the donor substrate. The donor substrate 40 is used in a step of forming the light emitting layer 15C by a transfer method, and has a stripe-shaped partition wall 42 on a rigid support substrate 41.

  As will be described later, the support substrate 41 is for forming a transfer layer containing a light emitting material that constitutes the light emitting layer 15C. The support substrate 41 has a rigidity that enables alignment with a transfer target substrate described later, and a laser. It is made of a material having a high light transmittance, such as glass.

  A photothermal conversion layer 43 that absorbs laser light and a protective layer 44 are provided on the surface of the support substrate 41. The photothermal conversion layer 43 is made of a metal material having high absorptance such as molybdenum (Mo), titanium (Ti), chromium (Cr), or an alloy containing these, and is formed in a part of the region divided by the partition wall 42. For example, it is formed in a stripe shape. The protective layer 44 is for protecting the light emitting material from contamination from the photothermal conversion layer 43, and is made of silicon nitride (SiNx), silicon oxide, or the like. The protective layer 44 may be omitted as shown in FIG.

  The partition wall 42 is provided on the support substrate 41 in correspondence with a region where the light emitting layer 15C on the driving substrate 11 is to be formed (light emitting region 13A). Thereby, in this donor substrate 40, a transfer layer containing a light emitting material of a different color is formed for each region divided by the partition wall 42, so that the number of times of transfer can be reduced. For example, the partition wall 42 has a height of about 1 μm to 3 μm and is made of polyimide or acrylic resin. Further, the partition wall 42 may be formed by processing the support substrate 41 by etching or sandblasting as shown in FIG. 7, for example.

  The donor substrate 40 can be manufactured, for example, as follows.

First, the photothermal conversion layer 43 made of the above-described material is formed on the support substrate 41 made of the above-described material by, for example, sputtering, and is formed into a predetermined shape by photolithography and etching. Next, the protective layer 44 made of the above-described material is formed by, for example, a CVD (Chemical Vapor Deposition) method . Subsequently, a photosensitive resin is applied over the entire surface of the support substrate 41, formed into a predetermined shape by, for example, a photolithography method, and baked to form the partition wall 42. Thus, the donor substrate 40 shown in FIG. 5 is formed.

  The donor substrate 40 can also be manufactured as follows.

  First, the support substrate 41 made of the above-described material is processed by etching or sand blasting to form the partition wall 42. Next, the photothermal conversion layer 43 made of the above-described material is formed by, for example, sputtering, and formed into a predetermined shape by photolithography and etching. Next, the protective layer 44 made of the above-described material is formed by, eg, CVD. Thus, the donor substrate 40 shown in FIG. 7 is formed.

(Manufacturing method of display device)
This display device can be manufactured, for example, as follows.

  First, the first electrode 13, the insulating layer 14, the hole injection layer, and the hole transport layer 15AB are formed on the driving substrate 11, and the transfer substrate 11A is formed.

  That is, a driving substrate 11 made of the above-described material is prepared, a pixel driving circuit 140 is formed on the driving substrate 11, and then a photosensitive resin is applied to the entire surface to apply a planarization insulating film (not shown). ) And patterned into a predetermined shape by exposure and development, and a connection hole (not shown) between the drive transistor Tr1 and the first electrode 13 is formed and baked.

  Next, the first electrode 13 made of the above-described material is formed by, for example, sputtering, and is formed into a predetermined shape by, for example, dry etching. An alignment mark used for alignment with the donor substrate in a transfer step described later may be formed at a predetermined position of the driving substrate 11.

  Subsequently, the insulating layer 14 is formed over the entire surface of the driving substrate 11, and an opening is provided corresponding to the light emitting region 13A of the first electrode 13, for example, by photolithography.

  After that, the hole injection layer and the hole transport layer 15AB made of the above-described thickness and material are sequentially formed by, for example, an evaporation method using an area mask. Thereby, the transfer substrate 11A is formed.

After forming the transfer substrate 11A, the red transfer layer 50R, the green transfer layer 50G, and the blue transfer layer 50B are formed on the donor substrate 40 by, for example, an inkjet method. That is, first, as shown in FIGS. 8A and 8B, a green light emitting material is dissolved in a solvent to prepare ink 51, and this ink 51 is dropped from an inkjet nozzle 52 to thereby form a donor. A green transfer layer 50G containing a green light emitting material is applied to the region divided by the partition wall 42 of the substrate 40, and dried in a baking furnace or the like in a vacuum or in an inert gas atmosphere. Ink jet film formation is preferably performed in an inert atmosphere such as N _{2 in} order to prevent material deterioration.

  Next, as shown in FIGS. 8B and 8C, a red transfer layer 50R containing a red light emitting material is applied to the adjacent region divided by the partition wall 42 in the same manner as the green transfer layer 50G. And dry.

  Subsequently, as shown in FIGS. 8C and 8D, a blue transfer layer 50B containing a blue light emitting material is formed in a further adjacent region divided by the partition wall 42 in the same manner as the red transfer layer 50R. Apply and dry. As described above, the red transfer layer 50R, the green transfer layer 50G, and the blue transfer layer 50B containing light emitting materials of different colors are formed for the regions divided by the partition wall 42.

  The order of application of the red transfer layer 50R, the green transfer layer 50G, and the blue transfer layer 50B is not particularly limited. Further, as a pretreatment, a fluorine plasma treatment or the like may be performed in order to impart ink repellency to the partition wall 42 to prevent color mixing. The drying process may be performed after application of each color, or may be performed collectively after application of all colors. However, it is more desirable to dry after applying each color from the viewpoint of film thickness uniformity. As a coating method, in addition to the ink jet method, other methods such as a flexographic printing method may be used.

  After the red transfer layer 50R, the green transfer layer 50G, and the blue transfer layer 50B are formed on the donor substrate 40, the light emitting layer 15C is formed by a transfer method. That is, as shown in FIG. 9A, the red transfer layer 50R, the green transfer layer 50G, and the blue transfer layer 50B are arranged to face the transfer substrate 11A. At this time, the donor substrate 40 and the transfer target substrate 11A are brought into close contact with each other in a vacuum environment, and are carried out to an atmospheric pressure environment while maintaining a vacuum between the two substrates with a vacuum holding frame. As a result, the donor substrate 40 is uniformly adhered to the transfer substrate 11 due to the pressure difference between the inside and outside of the substrate. However, insulation is provided between the surfaces of the red transfer layer 50R, the green transfer layer 50G, and the blue transfer layer 50B on the donor substrate 40 and the surfaces of the hole injection layer and the hole transport layer 15AB on the transfer substrate 11. A distance corresponding to the sum of the thickness (height) of the layer 14 and the height of the partition wall 42 is maintained.

  Next, as shown in FIG. 9B and FIG. 9C, the entire surface of the donor substrate 40 is irradiated with laser light LB from the back side of the donor substrate 40, and the red transfer layer 50R, the green transfer layer 50G, and the blue color are transferred. The transfer layer 50B is sublimated or vaporized and transferred to the transfer substrate 11A to form the light emitting layer 15C.

  At this time, the donor substrate 40 is formed with the red transfer layer 50R, the green transfer layer 50G, and the blue transfer layer 50B containing light emitting materials of different colors for each region divided by the partition wall 42 on the support substrate 41. All the R, G, and B light emitting layers 15C can be formed on the transfer substrate 11A by one transfer. Therefore, the usage efficiency of the light emitting material can be improved, and the running cost can be reduced. Further, the number of times of transfer can be reduced, and the cost of the manufacturing apparatus can be reduced and the production capacity can be increased.

  As shown in FIGS. 10 and 11, the width of the region divided by the partition wall 42 on the support substrate 41 is Wd, and the region where the light emitting layer 15C is to be formed on the transferred substrate 11, that is, the width of the light emitting region 13C. Is Ws, it is preferable to satisfy Wd> Ws.

  The reason is as follows. When the red transfer layer 50R, the green transfer layer 50G, and the blue transfer layer 50B are formed by a wet process such as an inkjet method, the dried red transfer layer 50R, the green transfer layer 50G, and the blue transfer layer 50B are extremely close to the partition wall 42. If this is transferred as it is, there is a possibility that the film thickness in the pixel is not uniform in the light emitting layer 15C. On the other hand, by satisfying Wd> Ws, it is possible to transfer only the portions where the red transfer layer 50R, the green transfer layer 50G, and the blue transfer layer 50B have a uniform thickness, and the pixels of the light emitting layer 15C. The uniformity of the inner film thickness can be improved. Therefore, the luminance unevenness or chromaticity unevenness in the pixel of the light emitting layer 15C can be suppressed, and by reducing the bias of the current density distribution, the reduction of the element life or the light extraction efficiency is improved, and the power consumption is increased. It can also be suppressed. As described above, since the red transfer layer 50R, the green transfer layer 50G, and the blue transfer layer 50B can be formed on the donor substrate 40 without degrading the image quality, the cost of the manufacturing apparatus can be reduced. Become.

  Furthermore, when the width of the photothermal conversion layer 43 is Wt, it is more preferable that Ws <Wt <Wd is satisfied. This is because, when the entire surface of the donor substrate 40 is irradiated with the laser beam LB, only the portions where the film thicknesses of the red transfer layer 50R, the green transfer layer 50G, and the blue transfer layer 50B are uniform can be transferred.

  The arrangement interval (pitch) Wdt of the partition walls 42 is equal to the width Wst of the organic light emitting elements 10R, 10G, and 10B. Here, the arrangement interval Wdt of the partition walls 42 is a distance between the center lines in the width direction of the adjacent partition walls 42, and the widths of the organic light emitting elements 10R, 10G, and 10B are the width direction of the insulating film 14 of the transferred substrate 11A. The distance between the center lines.

  After forming the light emitting layer 15C of the organic light emitting elements 10R, 10G, and 10B, as shown in FIG. 9D, the donor substrate 40 and the transferred substrate 11A are separated. On the transfer substrate 11A, the electron transport layer and the electron injection layer 15DE and the second electrode 16 are formed, for example, by vapor deposition. In this way, the organic light emitting elements 10R, 10G, and 10B are formed. On the other hand, the used donor substrate 40 can be cleaned and regenerated using a cleaning liquid that is usually used for shadow mask cleaning for organic EL, for example, “OEL Clean series” manufactured by Kanto Chemical Co., Ltd. Therefore, by providing the partition wall 42 on the donor substrate 40, there is no possibility of a large loss in terms of running cost.

  After the organic light emitting elements 10R, 10G, and 10B are formed, the protective film 17 made of the above-described material is formed thereon. As a method for forming the protective film 17, a film forming method in which the energy of the film forming particles is small to such an extent that the protective film 17 is not affected, for example, a vapor deposition method or a CVD method is preferable. Further, it is desirable that the protective film 17 be performed continuously with the formation of the second electrode 16 without exposing the second electrode 16 to the atmosphere. This is because deterioration of the organic layer 15 due to moisture and oxygen in the atmosphere can be suppressed. Further, in order to prevent a decrease in luminance due to deterioration of the organic layer 15, the film forming temperature of the protective film 17 is set to room temperature, and in order to prevent the protective film 17 from being peeled off, the film stress is minimized. It is desirable to film.

  Further, for example, a red filter material is formed on the sealing substrate 30 made of the above-described material by applying a red filter material by spin coating or the like, and patterning and baking by a photolithography technique. Subsequently, similarly to the red filter, a blue filter and a green filter are sequentially formed.

  After that, an adhesive layer 20 is formed on the protective film 17, and the sealing substrate 30 is bonded with the adhesive layer 20 in between. In that case, it is preferable to arrange | position the surface in which the color filter of the sealing substrate 30 was formed in the organic light emitting element 10R, 10G, 10B side. Thus, the display device shown in FIG. 1 is completed.

  In the display device thus obtained, a scanning signal is supplied to each pixel from the scanning line driving circuit 130 via the gate electrode of the writing transistor Tr2, and an image signal is supplied from the signal line driving circuit 120 to the writing transistor. It is held in the holding capacitor Cs via Tr2. That is, the driving transistor Tr1 is controlled to be turned on / off in accordance with the signal held in the holding capacitor Cs, whereby the driving current Id is injected into each of the organic light emitting elements 10R, 10G, and 10B, so that holes, electrons, Recombine to emit light. This light passes through the second electrode 16, the color filter, and the sealing substrate 30 and is extracted.

  As described above, in this embodiment, the partition wall 42 is provided on the support substrate 41 of the donor substrate 40 so as to correspond to the region (the light emitting region 13A) where the light emitting layer 15A on the transferred substrate 11A is to be formed. A red transfer layer 50R, a green transfer layer 50G, and a blue transfer layer 50B containing light emitting materials of different colors are formed for each region divided by the partition wall 42 on the support substrate 41, and R is transferred to the transfer target substrate 11A by one transfer. , G, and B can be formed. Therefore, the number of times of transfer can be reduced.

(Modification 1)
FIG. 12 shows the configuration of the donor substrate 40 according to the first modification of the present invention. The donor substrate 40 of this modification has the same configuration as that of the above embodiment except that the photothermal conversion layer 43 is provided on the entire surface of the support substrate 41. For example, the protective layer 44 may be omitted as shown in FIG. Further, as shown in FIG. 14, the partition wall 42 may be formed by processing the support substrate 41 by etching or sandblasting.

  The donor substrate 40 of this modification can be manufactured in the same manner as in the above embodiment except that the photothermal conversion layer 43 is formed on the entire surface of the support substrate 41.

  Next, a method for manufacturing a display device using the donor substrate 40 of this modification will be described.

  First, in the same manner as in the above embodiment, the first electrode 13, the insulating layer 14, the hole injection layer, and the hole transport layer 15AB are formed on the driving substrate 11, and the transfer substrate 11A is formed.

  Next, the red transfer layer 50R, the green transfer layer 50G, and the blue transfer layer 50B are formed on the donor substrate 40 by the process shown in FIG.

  Subsequently, the light emitting layer 15C is formed by a transfer method. That is, as shown in FIG. 15A, the red transfer layer 50R, the green transfer layer 50G, and the blue transfer layer 50B are transferred by the process shown in FIG. It is arranged opposite to the substrate 11A.

  After that, as shown in FIG. 15B, laser light LB is irradiated from the back side of the donor substrate 40, and the red transfer layer 50R, the green transfer layer 50G, and the blue transfer layer 50B are sublimated or vaporized to be transferred. The light emitting layer 15C is formed by transferring to the substrate 11A.

  At this time, as shown in FIGS. 16 and 17, it is preferable to satisfy Ws <Wt <Wd, where the irradiation width of the laser beam LB is Wt. This is because when the photothermal conversion layer 43 is formed on the entire surface of the donor substrate 40, only the portions where the film thicknesses of the red transfer layer 50R, the green transfer layer 50G, and the blue transfer layer 50B are uniform can be transferred.

  After forming the light emitting layer 15C of the organic light emitting devices 10R, 10G, and 10B, as shown in FIG. 15D, the donor substrate 40 and the transferred substrate 11A are separated. In the same manner as in the above embodiment, the electron transport layer and the electron injection layer 15DE and the second electrode 16 are formed on the transfer substrate 11A by, for example, vapor deposition. In this way, the organic light emitting elements 10R, 10G, and 10B are formed.

  After the organic light emitting elements 10R, 10G, and 10B are formed, the protective film 17 made of the above-described material is formed thereon as in the above embodiment. After that, the adhesive layer 20 is formed on the protective film 17, and the sealing substrate 30 on which the color filter is formed is bonded with the adhesive layer 20 in between. Thus, the display device shown in FIG. 1 is completed.

(Modification 2)
FIG. 18 shows a configuration of a donor substrate 40 according to the second modification of the present invention. The donor substrate 40 of the present modified example has the same configuration as that of the modified example 1 except that a reflective layer 45 that reflects the laser beam LB is provided below the partition wall 42.

  The reflective layer 45 is formed so as to avoid the central portion of the region divided by the partition wall 42 on the support substrate 41. As a result, in the second modification, even when the photothermal conversion layer 43 is provided on the entire surface of the support substrate 41, the entire surface of the donor substrate 40 is irradiated with the laser beam LB in the transfer step as in the above embodiment. be able to. Further, when the distance between adjacent reflective layers is Wt, it is preferable to satisfy Ws <Wt <Wd.

  The donor substrate 40 of this modification can be manufactured in the same manner as in the above embodiment except that the reflective layer 45 is formed under the partition wall 42. In addition, a method for manufacturing a display device using the donor substrate 40 of the present modification is the same as that in the above embodiment.

  In the above-described embodiment and modification, the case where the partition wall 42 of the donor substrate 40 is formed in a stripe shape has been described. However, the partition wall 42 may be formed of the organic light emitting device 10R as illustrated in FIG. 19 or FIG. , 10G, and 10B may have a rectangular planar shape (strip shape). However, in order to avoid thermal damage due to irradiation of the laser beam LB to the partition wall 42, the partition wall 42 is preferably formed in a stripe shape.

  Furthermore, specific examples of the present invention will be described.

Example 1
A display device was manufactured in the same manner as in the above embodiment mode. First, the first electrode 13, the insulating layer 14, the hole injection layer, and the hole transport layer 15AB were formed on the driving substrate 11 made of glass to form the transfer substrate 11A (see FIG. 9A). . In that case, the 1st electrode 13 was made into the laminated structure of the alloy (Ag-Pd-Cu alloy) layer of 120 nm-thick silver, palladium, and copper, and the 10-nm-thick ITO layer. The insulating layer 14 was formed by forming a silicon oxide with a thickness of 2 μm by a sputtering method, and providing an opening corresponding to the light emitting region 13A of the first electrode 13 by photolithography. The width Ws of the light emitting region 13A was 60 μm. The hole injection layer and the hole transport layer 15AB were formed by an evaporation method, the hole injection layer was m-MTDATA having a thickness of 25 nm, and the hole transport layer was α-NPD having a thickness of 30 nm.

  Next, a donor substrate 40 was manufactured (see FIG. 5). A photothermal conversion layer 43 made of chromium (Cr) was formed to a thickness of 200 nm on a support substrate 41 made of glass by sputtering, and formed into a stripe shape having a width of 70 μm and a pitch of 100 μm, for example, by photolithography. That is, the width Wt of the photothermal conversion layer 43 was set to 70 nm. Next, a protective layer 44 made of silicon nitride was formed to a thickness of 100 nm by a CVD method. Subsequently, the partition wall 42 made of silicon oxide was formed with a thickness of 3 μm by sputtering, and formed into a stripe shape with a width of 20 μm by photolithography. That is, the width Wd of the region divided by the partition wall 42 was 80 μm.

  As described above, the width Wd of the region divided by the partition 42 on the support substrate 41 is 80 μm, the region where the light emitting layer 15C on the transferred substrate 11 is to be formed, that is, the width Ws of the light emitting region 13C is 60 nm, and the photothermal conversion layer. The width Wt of 43 was 70 μm, and these satisfied Ws <Wt <Wd.

  A red transfer layer 50R, a green transfer layer 50G, and a blue transfer layer 50B were formed on the donor substrate 40 by an inkjet method in a nitrogen atmosphere (see FIG. 8). At that time, as the ink for the blue transfer layer 50B, a mixed solvent of toluene 50% and tetralin 50%, a blue light emitting material, ADN as a host material, 1.0% by weight, and DPAVBi, a dopant material, are set to 0.00%. What dissolved 025 weight% was used. As the ink for the green transfer layer 50G, an ink in which 1.0% by weight of ADN and 0.05% by weight of coumarin 6 were dissolved in the above mixed solvent was used. As the ink for the red transfer layer 50R, an ink prepared by dissolving 1.0% by weight of ADN and 0.3% by weight of BSN in the above mixed solvent was used. After coating, the solvent was removed by drying on a hot plate in a nitrogen atmosphere at 150 ° C. for 30 minutes. The thickness of each color transfer layer 50R, 50G, 50B after drying (thickness of the portion having a uniform film thickness excluding the extremely thickened or thinned portion near the partition wall 42) was 30 nm.

Subsequently, the donor substrate 40 was placed on the transfer substrate 11A and adhered in a vacuum (see FIG. 9A). A distance of about 5 μm corresponding to the sum of the thickness (height) 2 μm of the insulating layer 14 and the height 3 μm of the partition wall 42 was maintained between the two substrates. In this state, the entire surface of the donor substrate 40 was irradiated with laser light LB having a wavelength of 800 nm from the back side of the donor substrate 40 (see FIGS. 9B and 9C). The spot size of the laser beam LB was fixed to 100 μm × 20 μm, and the laser beam LB was scanned in a direction orthogonal to the longitudinal direction of the spot size. The energy density of the laser light was 2.6E ⁻³ J / μm ² .

  By laser irradiation, as shown in FIG. 21, portions of the color transfer layers 50R, 50G, and 50B, which are present on the photothermal conversion layer 43 and have relatively good film thickness uniformity, are selectively vaporized and covered. The light-emitting layer 15C was formed by being transferred to the transfer substrate 11. On the other hand, the relatively thick film portion in the vicinity of the partition wall 42 was not heated and vaporized because it did not have the photothermal conversion layer 43 and was left on the donor substrate 40. The in-pixel film thickness distribution of the light emitting layer 15C transferred to the transfer substrate 11 was within 30 nm ± 4%, and good uniformity was obtained.

  After forming the light emitting layer 15C, the electron transport layer and the electron injection layer 15DE and the second electrode 16 were formed by vapor deposition. The electron transport layer was Alq3 having a thickness of 20 nm, and the electron injection layer was LiF having a thickness of 0.3 nm (deposition rate: 0.01 nm / sec). The second electrode 16 was MgAg having a thickness of 10 nm. After that, the protective film 17 and the adhesive layer 20 were formed, and the sealing substrate 30 was bonded to form a display device.

(Example 2)
The transfer substrate 11A was formed in the same manner as in Example 1. That is, the region where the light emitting layer 15C is desired to be formed on the transferred substrate 11, that is, the width Ws of the light emitting region 13C was 60 nm.

  When the donor substrate 40 was formed, the width of the photothermal conversion layer 43 was set to 60 μm. Further, the width Wd of the region divided by the partition 42 on the support substrate 41 was set to 60 μm by setting the width of the partition 42 to 40 μm. That is, the width Wd of the region divided by the partition wall 42 on the support substrate 41 is 60 μm, the region where the light emitting layer 15C is to be formed on the transferred substrate 11, that is, the width Ws of the light emitting region 13C is 60 nm, and the width of the photothermal conversion layer 43 Wt was 60 μm, and these did not satisfy Ws <Wt <Wd.

  The color transfer layers 50R, 50G, and 50B were formed on the donor substrate 40 in the same manner as in Example 1. The in-pixel film thickness distribution of each color transfer layer 50R, 50G, 50B after drying was 30 nm ± 30% or more, and the film thickness uniformity was lower than that of Example 1.

  Using this donor substrate 40, laser irradiation was performed in the same manner as in Example 1 above. As shown in FIG. 22, the relatively thick film portion in the vicinity of the partition wall 42 had variations in transferability, and the transfer residue 53 was also present on the donor substrate 40. After that, a display device was manufactured in the same manner as in Example 1.

  Regarding the obtained display devices of Examples 1 and 2, when the light emission state was confirmed visually, the light emission unevenness and the brightness unevenness were suppressed in Example 1 as compared with Example 2. That is, the width Wd of the region divided by the partition wall 42 on the support substrate 41, the region where the light emitting layer 15C is to be formed on the transferred substrate 11, that is, the width Ws of the light emitting region 13C, and the width Wt of the photothermal conversion layer 43 are Ws. It was found that if <Wt <Wd is satisfied, the in-pixel film thickness uniformity of the light emitting layer 15C can be improved, and the display quality can be improved.

(Modules and application examples)
Hereinafter, application examples of the display device described in each of the above-described embodiments will be described. The display device in each of the above embodiments is a television device, a digital camera, a notebook personal computer, a mobile terminal device such as a mobile phone, or a video camera, such as an externally input video signal or an internally generated video signal. The present invention can be applied to display devices for electronic devices in various fields that display images or videos.

(module)
The display device of each of the above embodiments is incorporated into various electronic devices such as application examples 1 to 5 described later, for example, as a module as illustrated in FIG. In this module, for example, a region 210 exposed from the sealing substrate 30 and the adhesive layer 20 is provided on one side of the transfer substrate 11, and the signal line driving circuit 120 and the scanning line driving circuit 130 are provided in the exposed region 210. The wiring is extended to form an external connection terminal (not shown). The external connection terminal may be provided with a flexible printed circuit (FPC) 220 for signal input / output.

(Application example 1)
FIG. 24 illustrates an appearance of a television device to which the display device of each of the above embodiments is applied. The television apparatus has, for example, a video display screen unit 300 including a front panel 310 and a filter glass 320, and the video display screen unit 300 is configured by the display device according to each of the above embodiments. .

(Application example 2)
FIG. 25 shows the appearance of a digital camera to which the display device of each of the above embodiments is applied. The digital camera includes, for example, a flash light emitting unit 410, a display unit 420, a menu switch 430, and a shutter button 440. The display unit 420 is configured by the display device according to each of the above embodiments. Yes.

(Application example 3)
FIG. 26 shows the appearance of a notebook personal computer to which the display device of each of the above embodiments is applied. The notebook personal computer has, for example, a main body 510, a keyboard 520 for inputting characters and the like, and a display unit 530 for displaying an image. The display unit 530 is a display according to each of the above embodiments. It is comprised by the apparatus.

(Application example 4)
FIG. 27 shows the appearance of a video camera to which the display device of each of the above embodiments is applied. This video camera has, for example, a main body 610, a subject photographing lens 620 provided on the front side surface of the main body 610, a start / stop switch 630 at the time of photographing, and a display 640. Reference numeral 640 denotes the display device according to each of the above embodiments.

(Application example 5)
FIG. 28 shows an appearance of a mobile phone to which the display device of each of the above embodiments is applied. For example, this mobile phone is obtained by connecting an upper housing 710 and a lower housing 720 with a connecting portion (hinge portion) 730, and includes a display 740, a sub-display 750, a picture light 760, and a camera 770. Yes. The display 740 or the sub-display 750 is configured by the display device according to each of the above embodiments.

  The present invention has been described with reference to the embodiments and examples. However, the present invention is not limited to the above embodiments and examples, and various modifications can be made. For example, in the above embodiments and examples, the case of irradiating laser light in the transfer process has been described. However, other radiation such as a lamp may be irradiated.

  In the above embodiment, the case where all the R, G, and B light emitting layers 15C are formed by the transfer method has been described. However, after forming only the red and green light emitting layers 15C by the transfer method, the blue common layer is formed. The entire surface may be formed by vapor deposition. At this time, in the organic light emitting device 10R, the light emitting layer 15C including the red light emitting material and the blue common layer including the blue light emitting material are formed. However, energy transfer occurs in red having the lowest energy level, and red light emission occurs. Becomes dominant. In the organic light emitting device 10G, a light emitting layer 15C containing a green light emitting material and a blue common layer containing a blue light emitting material are formed. Energy transfer occurs in green having a lower energy level, and green light emission is dominant. It becomes. Since the organic light emitting device 10B has only the blue common layer, blue light emission occurs.

  Further, for example, the materials and thicknesses of the respective layers described in the above embodiments and examples, or the film forming method, film forming conditions, and laser light irradiation conditions are not limited, and other materials and thicknesses may be used. Alternatively, other film forming methods, film forming conditions, and irradiation conditions may be used. For example, the first electrode 13 may have a dielectric multilayer film.

  In addition, for example, in the above embodiment, the first electrode 13, the organic layer 15, and the second electrode 16 are sequentially stacked on the driving substrate 11 from the driving substrate 11 side, and the sealing substrate 30. In the above description, the light is extracted from the side of the substrate 11. However, the stacking order is reversed, and the second electrode 16, the organic layer 15, and the first electrode 13 are placed on the side of the substrate for driving 11 on the driving substrate 11. Alternatively, the light can be extracted from the side of the driving substrate 11.

  Furthermore, for example, in the above embodiment, the case where the first electrode 13 is the anode and the second electrode 16 is the cathode has been described. However, the anode and the cathode are reversed, and the first electrode 13 is the cathode and the second electrode. 16 may be an anode. Further, the first electrode 13 is a cathode, the second electrode 16 is an anode, and the second electrode 16, the organic layer 15, and the first electrode 13 are stacked on the driving substrate 11 in order from the transfer substrate 11 side. In addition, light can be extracted from the driving substrate 11 side.

In addition, in the above-described embodiment, the configuration of the organic light emitting elements 10R, 10G, and 10B has been specifically described. However, it is not necessary to include all layers, and other layers may be further included. Good. For example, between the first electrode 13 and the organic layer 15, chromium oxide (III) (Cr ₂ O ₃ ), ITO (Indium-Tin Oxide: mixed oxide film of indium (In) and tin (Sn)), etc. A hole injecting thin film layer may be provided.

  Furthermore, in the above-described embodiment, the case where the second electrode 16 is configured by a semi-transmissive electrode and the light generated in the light emitting layer 15C is extracted from the second electrode 16 side has been described. You may make it take out from the electrode 13 side. In this case, it is desirable to increase the luminous efficiency so that the second electrode 16 has as high a reflectance as possible.

  In addition, in each of the above embodiments, the case of an active matrix display device has been described. However, the present invention can also be applied to a passive matrix display device. Furthermore, the configuration of the pixel driving circuit for active matrix driving is not limited to that described in each of the above embodiments, and a capacitor or a transistor may be added as necessary. In that case, a necessary driving circuit may be added in addition to the signal line driving circuit 120 and the scanning line driving circuit 130 described above in accordance with the change of the pixel driving circuit.

It is a figure showing the structure of the display apparatus which concerns on one embodiment of this invention. It is a figure showing an example of the pixel drive circuit shown in FIG. It is a top view showing the structure of the display area shown in FIG. It is sectional drawing showing the structure of the organic light emitting element shown in FIG. It is sectional drawing and the top view showing the structure of the donor substrate used for the manufacturing method of the display apparatus shown in FIG. It is sectional drawing showing the modification of a donor substrate. It is sectional drawing showing the other modification of a donor substrate. It is sectional drawing showing the formation method of the transfer layer to a donor substrate in order of a process. FIG. 3 is a cross-sectional view illustrating a method of manufacturing the display device illustrated in FIG. 1 in order of steps. It is sectional drawing showing the positional relationship of a to-be-transferred substrate and a donor substrate. It is a top view showing the positional relationship of a to-be-transferred substrate and a donor substrate. It is sectional drawing and the top view showing the structure of the donor substrate which concerns on the modification 1 of this invention. It is sectional drawing showing the modification of a donor substrate. It is sectional drawing showing the other modification of a donor substrate. It is sectional drawing showing the manufacturing method of the display apparatus using the donor substrate shown in FIG. 12 in order of a process. It is sectional drawing showing the positional relationship of a to-be-transferred substrate and a donor substrate. It is a top view showing the positional relationship of a to-be-transferred substrate and a donor substrate. It is sectional drawing and the top view showing the structure of the donor substrate which concerns on the modification 2 of this invention. It is a top view showing the modification of a donor substrate. It is a top view showing the other modification of a donor substrate. FIG. 6 is a diagram illustrating the result of Example 1. FIG. 6 is a diagram illustrating a result of Example 2. It is a top view showing schematic structure of the module containing the display apparatus of each said embodiment. It is a perspective view showing the external appearance of the application example 1 of the display apparatus of each said embodiment. (A) is a perspective view showing the external appearance seen from the front side of the application example 2, (B) is a perspective view showing the external appearance seen from the back side. 12 is a perspective view illustrating an appearance of application example 3. FIG. 14 is a perspective view illustrating an appearance of application example 4. FIG. (A) is a front view of the application example 5 in an open state, (B) is a side view thereof, (C) is a front view in a closed state, (D) is a left side view, and (E) is a right side view, (F) is a top view and (G) is a bottom view.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Pixel, 10R, 10G, 10B ... Organic light emitting element, 11 ... Driving substrate, 11A ... Transfer substrate, 13 ... First electrode, 14 ... Insulating layer, 15 ... Organic layer, 15AB ... Hole injection layer and positive Hole transport layer, 15C ... light emitting layer, 15DE ... electron transport layer and electron injection layer, 16 ... second electrode, 17 ... protective film, 20 ... adhesive layer, 30 ... sealing substrate, 40 ... donor substrate, 50R ... red Transfer layer, 50G ... green transfer layer, 50B ... blue transfer layer

Claims (11)

A transfer layer containing a light emitting material is formed, the transfer layer is disposed opposite to the transfer substrate, irradiated with radiation, and the transfer layer is sublimated or vaporized to transfer to the transfer substrate to form a light emitting layer. A donor substrate for
A rigid support substrate;
A donor substrate comprising: a partition provided on the support substrate in correspondence with a region where the light emitting layer is to be formed on the transfer substrate. When the width of the region divided by the partition on the support substrate is Wd, and the width of the region where the light emitting layer is to be formed on the transfer substrate is Ws,
Wd> Ws
The donor substrate according to claim 1, wherein: A photothermal conversion layer that absorbs the radiation is formed in at least part of the region divided by the partition on the support substrate, and the width of the photothermal conversion layer is Wt.
Ws <Wt <Wd
The donor substrate according to claim 2, wherein: When the irradiation width of the radiation is Wt,
Ws <Wt <Wd
The donor substrate according to claim 2, wherein: A part of the region divided by the partition on the support substrate is avoided, a reflection layer that reflects the radiation is formed, and the distance between the adjacent reflection layers is Wt,
Ws <Wt <Wd
The donor substrate according to claim 2, wherein: Display for forming a first electrode, an insulating layer having an opening corresponding to a light emitting region of the first electrode, a plurality of organic layers including a light emitting layer, and an organic light emitting element having a second electrode in order on a driving substrate A device manufacturing method comprising:
Forming a part of the first electrode, the insulating layer, and the plurality of organic layers on the driving substrate to form a transferred substrate;
A transfer layer containing a light emitting material is formed on a donor substrate, the transfer layer is disposed opposite to the transfer target substrate, irradiated with radiation, and the transfer layer is sublimated or vaporized to be transferred to the transfer substrate to emit light. Forming a layer;
Forming the remainder of the plurality of organic layers and the second electrode,
A method for manufacturing a display device, comprising: a donor substrate having a rigid support substrate; and a partition provided on the support substrate in correspondence with the light emitting region on the transfer substrate. . When the width of the region divided by the partition on the support substrate is Wd and the width of the light emitting region on the transfer substrate is Ws,
Wd> Ws
The method for manufacturing a display device according to claim 6, wherein: A photothermal conversion layer that absorbs the radiation is formed in at least part of the region divided by the partition on the support substrate, and the width of the photothermal conversion layer is Wt.
Ws <Wt <Wd
The method for manufacturing a display device according to claim 7, wherein: When the irradiation width of the radiation is Wt,
Ws <Wt <Wd
The method for manufacturing a display device according to claim 7, wherein: A part of the region divided by the partition on the support substrate is avoided, a reflection layer that reflects the radiation is formed, and the distance between the adjacent reflection layers is Wt,
Ws <Wt <Wd
The method for manufacturing a display device according to claim 7, wherein: A transfer layer containing a light emitting material of a different color is formed for each region divided by the partition on the support substrate, and the light emitting layer of two or more colors is formed on the substrate to be transferred by one transfer. A method for manufacturing a display device according to any one of claims 6 to 10.

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