JP2009277606A - Film-forming method and production method of light-emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a film-forming method, as well as a production method of a light-emitting device, of smoothly obtaining a desired pattern shape of material layers while improving a throughput in laminating a plurality of different material layers on a substrate. <P>SOLUTION: Material layers are selectively formed beforehand by pump pressure layers at positions overlapping a light-absorbing layer on a first substrate. The first substrate and a second substrate to be a film-formed substrate are arranged in opposition, light is irradiated on the light-absorbing layer to heat it, and a film is formed on the second substrate. The light-absorbing layer may be provided on a whole face or part of it. If the light-absorbing layer is in a partially provided desired pattern shape, a film-forming pattern reflecting the pattern shape of the light-absorbing layer on which light is irradiated is deposited on the substrate later to be a part of the display panel. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

The present invention relates to a film forming method used for forming a layer containing an organic compound. Further, the present invention relates to a method for manufacturing a light-emitting device using a layer containing an organic compound as a light-emitting layer.

  A light-emitting element using an organic compound having characteristics such as thin and light weight, high-speed response, and direct current low-voltage driving as a light emitter is expected to be applied to a next-generation flat panel display. In particular, a display device in which light emitting elements are arranged in a matrix is considered to be superior to a conventional liquid crystal display device in that it has a wide viewing angle and excellent visibility.

  The light-emitting mechanism of the light-emitting element is such that when a voltage is applied with an EL layer sandwiched between a pair of electrodes, electrons injected from the cathode and holes injected from the anode are recombined at the emission center of the EL layer. It is said that when excitons are formed and the molecular excitons relax to the ground state, they emit energy and emit light. Singlet excitation and triplet excitation are known as excited states, and light emission is considered to be possible through either excited state.

  The EL layer included in the light-emitting element has at least a light-emitting layer. In addition, the EL layer can have a stacked structure including a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and the like in addition to the light-emitting layer.

  Further, EL materials for forming the EL layer are roughly classified into low molecular (monomer) materials and high molecular (polymer) materials. In general, a low molecular weight material is often formed using a vapor deposition method, and a high molecular weight material is often formed using an ink jet method or a spin coat method.

The present applicant discloses in Patent Document 1 and Patent Document 2 that an EL layer is formed using an inkjet method.

In addition, the present applicant discloses a technique in which an organic EL material is applied by “line” from a nozzle instead of applying by “dot” as in the ink jet method in Patent Document 3.

Patent Document 4 also discloses a technique for applying an organic EL material by a method different from the ink jet method, that is, a film forming method using a so-called nozzle printing apparatus.
JP 2001-52864 A JP 2001-102170 A JP 2001-189192 A JP2002-75640

The ink jet method disclosed in Patent Document 1 and Patent Document 2 is prepared by preparing a liquid containing a material by dissolving or dispersing the material to be deposited in a solvent or the like in order to eject it from a nozzle. The liquid is discharged from the nozzle to form a film on the film formation substrate. In the ink jet method, film formation can be selectively performed on a deposition target substrate by controlling the amount of droplets discharged from a nozzle and the droplet dropping position.

Also, the methods disclosed in Patent Document 3 and Patent Document 4 once prepare and prepare a liquid containing a material. The methods disclosed in Patent Document 3 and Patent Document 4 are superior to the inkjet method in that the viscosity of the material liquid that can be used is wide and clogging due to drying of the nozzle tip is not a problem. . The disadvantage of the inkjet method is that the nozzle with a narrow mouth clogs for some reason, and if there is a place where ejection is not performed unintentionally, the result is a display panel with point defects or line defects. It is to become.

Note that in any of Patent Documents 1 to 4, the deposition target substrate becomes a part of the display panel later.

When these wet processes are used, it is difficult to form a laminated structure on a deposition target substrate that will later become a part of the display panel. For example, when the second material layer of the second layer is stacked on the first material layer of the first layer, the surface of the first material layer of the first layer is easily dissolved, and the first material layer There is a possibility that the contained organic material may be mixed into the second material layer.

In addition, these wet processes are configured to perform a drying process for evaporating the solvent and the like each time the film is further stacked on the film formation substrate which will be a part of the display panel later, depending on the material liquid and the solvent to be used. Since the time required for the drying process is from 30 minutes to 1 hour or longer, the throughput increases as the number of stacked layers increases. In addition, since the baking temperature differs depending on the material and solvent used, for example, when the baking temperature of the uppermost material layer is higher than the melting temperature of the lower material layer, the interface disappears and mixing occurs unintentionally. There is a fear.

In order to solve the above problems, a film forming method and a light-emitting device that smoothly obtain a desired pattern shape of a material layer while improving throughput when laminating a plurality of different material layers on a substrate that will be a part of a display panel later It is an object to provide a manufacturing method.

Therefore, instead of selectively forming a material layer on a substrate that will be a part of the display panel later, the material liquid is selectively applied in advance on the deposition substrate and baked, and then the deposition substrate is formed. And a substrate that will be a part of the display panel later, and a substrate that will be a part of the display panel later by irradiating light and heating the material layer formed on the film formation substrate. A material layer is selectively formed thereon.

A film-forming substrate is provided with at least a light absorption layer in advance. The light absorption layer may be provided on the entire surface or may be provided partially. If the light absorption layer has a desired pattern shape that is partially provided, a film formation pattern that reflects the pattern shape of the light absorption layer irradiated with light is formed on a substrate that later becomes a part of the display panel. Note that a pattern upper surface shape of the material layer that is substantially the same as the pattern upper surface shape of the light absorption layer is obtained on a substrate that will be a part of the display panel later.

In particular, when a plurality of strip-shaped light absorption layers are arranged in a stripe shape, and a material liquid is ejected from a nozzle by pumping to form a material layer that overlaps the light absorption layer, the partition wall exists only on both sides of the light absorption layer, Since the application is performed in one direction in which the nozzle and the substrate are relatively moved, the film thickness uniformity in the application direction can be improved. The formation of a striped material layer on a substrate that will be a part of the display panel later can be designed with a narrow pixel interval in the coating direction, which contributes to an improvement in aperture ratio.

The stripe shape includes an elongated rectangular shape having an aspect ratio of 2 or more, and an elongated elliptical shape having a major axis and a minor axis of 2 or more.

Further, even when there is unevenness due to wiring or the like on the surface of the substrate that will be part of the display panel later, film formation with high film thickness uniformity can be performed. The film formation substrate is not provided with wiring, but a light absorption layer is formed. However, if a material layer having a uniform film thickness can be formed on the light absorption layer, light is absorbed. By irradiating the layer, a film reflecting the uniformity of the film thickness can be obtained on a substrate which later becomes a part of the display panel. In particular, when an active matrix light-emitting device is used, a wiring or a switching element is provided on a substrate surface which will be a part of the display panel later before the EL layer is formed, and has unevenness. The invention is useful. When coating is performed by a conventional method using a low-viscosity material, the film thickness may be uneven due to unevenness on the surface of the substrate that will later become a part of the display panel.

Further, even if the material liquid is discharged to a portion that does not overlap with the light absorption layer that is partially provided, a part of the material layer that overlaps with the light absorption layer is heated. It is possible to prevent film formation. The material layer can be formed with a single stroke on the deposition substrate without temporarily stopping the discharge of the material liquid from the nozzle. Further, even in so-called multi-planar manufacturing in which a plurality of panels are manufactured on one substrate, film formation can be performed selectively, so that a striped material layer is formed on the surface of the substrate that will be a part of the display panel later. Can be formed.

In addition, the present invention is the same as that from the nozzle by pumping by controlling the flow meter and pressure gauge without using a piezo element and a heater for generating bubbles, compared to the ink jet method using a piezo element and a heater for generating bubbles. The material liquid can be discharged at a flow rate, and the film thickness is excellent. The nozzle used in the present invention is less expensive than the head used in the ink jet method.

In the present invention, after the material layer is once formed on the film formation substrate, another substrate is placed opposite to the substrate, and the material layer is heated by light irradiation to the light absorption layer. Film formation is performed on the other surface of the substrate. Therefore, the material liquid used in the present invention is a material liquid having a viscosity that can be discharged from a nozzle by pumping, and a material liquid containing an organic compound material that can be evaporated by heat, specifically a low-molecular organic compound. It is a material liquid containing a material. That is, in the present invention, a material capable of both coating film formation and dry film formation is used as the EL material included in the material layer.

9- [4- (10-phenyl-9-anthryl) phenyl] -9H-carbazole (abbreviation: CzPA), 9- {4- [10- (4-tert-butylphenyl) -9-anthryl] phenyl}- A carbazole derivative typified by 9H-carbazole (abbreviation: PTBCzPA), an aromatic hydrocarbon compound typified by 2-tert-butyl-9,10-di (2-naphthyl) anthracene (abbreviation: t-BuDNA), , Metal complexes represented by bis (2-methyl-8-quinolinolato) (4-phenylphenolato) aluminum (III) (abbreviation: BAlq), N, N′-bis (3-methylphenyl) -N, An aromatic amine compound typified by N′-diphenyl- [1,1′-biphenyl] -4,4′-diamine (abbreviation: TPD) is used for coating film formation and Both ShikiNarumaku are mentioned as materials possible.

As the solvent used for the preparation of the material liquid, more types of solvents can be used than in the ink jet method. For example, halogen solvents such as chloroform, tetrachloromethane, dichloromethane, 1,2-dichloroethane, or chlorobenzene, acetone , Ketone solvents such as methyl ethyl ketone, diethyl ketone, n-propyl methyl ketone, or cyclohexanone, aromatic solvents such as benzene, toluene, xylene, or anisole, ethyl acetate, n-propyl acetate, n-butyl acetate, propionic acid Ester solvents such as ethyl, γ-butyrolactone or diethyl carbonate, ether solvents such as diethyl ether, tetrahydrofuran or dioxane, amide solvents such as dimethylformamide or dimethylacetamide, Ethanol, isopropanol, 2-methoxyethanol, or alcohol solvents such as 2-ethoxyethanol, dimethylsulfoxide, may be used hexane, or water. Moreover, you may mix and use these solvent multiple types. By using the film formation method of the present invention, the utilization efficiency of the material can be increased and the manufacturing cost can be reduced. In addition, the fact that more types of solvents can be used than in the ink jet method leads to an increase in the types of organic compounds that can be used in comparison with the ink jet method. The membrane method has.

Note that when xylene or toluene is used as a solvent to be added to adjust the material solution, the solvent volatilizes in a short time and is naturally dried, so that the time required for the drying process can be shortened or eliminated.

Various materials can be used for the light absorption layer. For example, a metal nitride such as titanium nitride, tantalum nitride, molybdenum nitride, or tungsten nitride, a metal such as titanium, molybdenum, or tungsten, or carbon can be used. In addition, since the kind of material suitable for a light absorption layer changes according to the wavelength of the irradiated light, it is necessary to select a material suitably. Further, the light absorption layer is not limited to a single layer and may be composed of a plurality of layers. For example, a stacked structure of metal and metal nitride may be used. Note that the light absorption layer can be formed by various methods. For example, it can be formed by sputtering, electron beam vapor deposition, vacuum vapor deposition, or the like.

  Moreover, although the film thickness of a light absorption layer changes with materials, it can convert into the heat | fever without wasting the irradiated light by setting it as the film thickness which the irradiated light does not permeate | transmit. Therefore, the film thickness is preferably 10 nm or more and 2 μm or less. In addition, when the light absorption layer is thinner, the entire light absorption layer can be heated with light of smaller energy. Therefore, the thickness of the light absorption layer is more preferably 10 nm or more and 600 nm or less. For example, when light having a wavelength of 532 nm is irradiated, by setting the thickness of the light absorption layer to 50 nm or more and 200 nm or less, the irradiated light can be efficiently absorbed and generated.

  Note that the light-absorbing layer is irradiated if it can be heated to a temperature at which a material included in the material layer can be formed (a temperature at which at least part of the material included in the material layer is formed on the deposition target substrate). Part of the light may be transmitted.

As light to be irradiated, light from a lamp light source or laser light from a laser light source can be used.

As a lamp light source, a flash lamp (such as a xenon flash lamp or a krypton flash lamp), a discharge lamp such as a xenon lamp or a metal halide lamp, or a heating lamp such as a halogen lamp or a tungsten lamp can be used. The flash lamp can irradiate a large area repeatedly and with a very high intensity in a short time (0.1 ms to 10 seconds), so it can be heated efficiently and uniformly regardless of the area of the film-forming substrate. can do. In addition, heating of the film formation substrate can be controlled by changing the time interval of light emission. Moreover, since the flash lamp has a long life and low power consumption during light emission standby, the running cost can be kept low.

As the laser light, gas laser such as Ar laser, Kr laser, excimer laser, single crystal YAG, YVO ₄ , forsterite (Mg ₂ SiO ₄ ), YAlO ₃ , GdVO ₄ , or polycrystalline (ceramic) is used. YAG, Y ₂ O ₃ , YVO ₄ , YAlO ₃ , GdVO ₄ with one or more of Nd, Yb, Cr, Ti, Ho, Er, Tm, Ta added as dopants are used as the medium. Lasers, glass lasers, ruby lasers, alexandrite lasers, Ti: sapphire lasers, fiber lasers and other solid lasers that are oscillated from one or more types can be used. Also, second harmonics, third harmonics, and higher harmonics oscillated from the solid-state laser can be used. Note that the use of a solid-state laser whose laser medium is solid has the advantage that a maintenance-free state can be maintained for a long time and the output is relatively stable.

The shape of the laser spot is preferably linear or rectangular. By making the shape linear or rectangular, the processing substrate can be efficiently scanned with laser light. Therefore, the time required for film formation (takt time) is shortened and productivity is improved.

By using the film formation method described above, at least one EL layer included in the light-emitting element, for example, a light-emitting layer can be formed. In addition, it is possible to form a film only in a desired region by using a partition wall having an opening that allows the light absorption layer to have an area that is approximately the same as that of the pixel portion and the material liquid has a desired pattern shape. is there. In addition, by forming the light absorption layer in a desired pattern shape, it is possible to form a film only in a desired region. In this manner, since a film can be formed only in a desired region, a fine pattern can be formed, and a high-definition light-emitting device can be manufactured.

In the case of manufacturing a full-color light-emitting device, it is necessary to separately create a light-emitting layer. Therefore, the light-emitting layer can be easily formed by using the film forming method of the present invention. For example, at least a nozzle for discharging a first material liquid containing a red light emitting material, a nozzle for discharging a second material liquid containing a green light emitting material, and a nozzle for discharging a third material liquid containing a blue light emitting material are included. Three kinds of light-emitting layers can be formed on a single film formation substrate using the film device. In addition, a single film-forming substrate on which each of the three types of light-emitting layers is formed is irradiated with light, and the film-forming substrate (a substrate that will become a part of the display panel later) disposed oppositely is short. Three types of light emitting layers can be formed in time. Further, according to the present invention, three types of light emitting layers can be formed with high positional accuracy by performing only one position alignment.

As a first material liquid containing a red light emitting material for forming a red light emitting layer to be formed on the film formation substrate, discharge is performed using 2-methoxyethanol as a solvent, and TPD and (acetyl) are used with BAlq as a host. A red light-emitting layer containing acetonato) bis (2,3,5-triphenylpyrazinato) iridium (III) (abbreviation: Ir (tppr) ₂ (acac)) can be formed. In addition, as a second material liquid containing a green light emitting material for forming a green light emitting layer to be formed on a film formation substrate, discharge is performed using toluene as a solvent, and CzPA is used as a host, and N- (9, A green light-emitting layer containing 10-diphenyl-2-anthryl) -N, 9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCAPA) can be formed. In addition, as a third material liquid containing a blue light emitting material for forming a blue light emitting layer to be formed on the deposition substrate, discharge is performed using toluene as a solvent, CzPA is used as a host, N, 9 A blue light-emitting layer containing -diphenyl-N- [4- (10-phenyl-9-anthryl) phenyl] -9H-carbazol-3-amine (abbreviation: PCAPA) can be formed.

Depending on the irradiation area of the light applied to the light absorption layer of the film formation substrate, a plurality of different material layers may be heated at the same time, but a pair of substrates at the time of light irradiation (a film formation substrate and a display later) Color mixing can be prevented by narrowing the distance between a total of two substrates that are part of the panel. In this specification, the substrate interval is defined as the shortest distance between the two substrate surfaces facing each other.

Furthermore, in addition to the light-emitting layer, a stacked structure including a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and the like can be formed.

In addition, a partition wall is provided on the deposition substrate in order to prevent the material liquid from spreading around the light absorption layer. The partition wall provided on the deposition substrate can precisely control the volume of the space surrounded by the entire partition wall by the height of the partition wall, so that the material liquid is discharged to the region surrounded by the partition wall and held in the region surrounded by the partition wall. The amount of liquid to be controlled can be controlled. Therefore, the height of the partition wall is preferably higher than the film thickness of the light absorption layer. Further, even if the discharged material liquid passes over the height of the partition wall and overflows and adheres to the outside of the partition wall, the material attached to the outer part of the partition wall does not evaporate even when irradiated with light.

Further, the cross-sectional shape of the partition wall provided with the partition wall on the deposition substrate is not particularly limited, but is rectangular or trapezoidal. Further, a surface treatment for imparting lyophilicity to the liquid to be discharged may be performed on the surface of the partition wall, or a surface treatment for imparting liquid repellency may be performed on the surface of the partition wall. Also, if the surface is made lyophilic due to the influence of the side wall of the partition wall, the film thickness near the side surface becomes thicker than the central part (the central part of the region surrounded by the partition wall), and if the surface is lyophobic, The film thickness in the vicinity tends to be thinner than the central part. Therefore, in order to avoid this non-uniform film thickness, the partition and the light absorption layer may be spaced apart.

In the structure of the invention disclosed in this specification, a light absorption layer is formed on one surface of a first substrate, a partition wall surrounding the light absorption layer is selectively formed, and a material liquid is discharged from a nozzle by pumping. Then, a material layer in contact with the partition wall and the light absorption layer is selectively formed, and the surface of the first substrate on which the material layer is formed and the deposition surface of the second substrate are opposed to each other. The light absorption layer is irradiated with light from the other surface side, and at least a part of the material layer in a position overlapping with the light absorption layer is selectively heated to form a film on the film formation surface of the second substrate. It is a film forming method characterized by performing.

The present invention solves at least one of the above problems.

  In the case of an active matrix light-emitting device, a partition wall having openings in a lattice shape is provided on the surface of a substrate that will be a part of the display panel later. In another aspect of the invention, a light absorption layer is formed on one surface of the first substrate, a first partition surrounding the light absorption layer is selectively formed, and a material liquid is discharged from the nozzle by pumping. A material layer in contact with the first partition and the light absorption layer is selectively formed, and a surface of the first substrate on which the material layer is formed and a film formation surface of the second substrate having the first electrode The light absorption layer is irradiated with light from the other surface side of the first substrate, and at least a part of the material layer in a position overlapping with the light absorption layer is selectively heated to cover the second substrate. A layer containing an organic compound is formed on the first electrode provided on the film formation surface, a second electrode is formed on the layer containing the organic compound, and the film formation surface of the second substrate is A method for manufacturing a light-emitting device, comprising: a plurality of first electrodes, and a second partition wall that insulates each other.

  In the manufacturing method, the top shape of the first partition and the second partition are different. The first partition wall has a top surface shape having openings in a stripe shape, and the second partition wall has a top surface shape in which openings are provided in a lattice shape. In the second partition, the openings are arranged in a matrix in the X direction (row direction) and the Y direction (column direction), but the interval between adjacent openings is different in the X direction and the Y direction.

In the case of manufacturing an active matrix light-emitting device, light is transmitted to a region where a light absorption layer is not provided when the film formation substrate is irradiated with light, and light is irradiated to an element or a wiring. Or damage the wiring. In order to prevent damage, a light reflecting layer may be selectively provided over the deposition substrate. By selectively forming the reflective layer, a film to be formed on the substrate that will be a part of the display panel later can be selectively formed in a fine pattern reflecting the pattern of the reflective layer.

The reflective layer is a layer for reflecting light irradiated to other portions in order to selectively irradiate light to a portion of the light absorption layer during film formation. Therefore, the reflective layer is preferably formed of a material having a high reflectance with respect to the light to be irradiated. Specifically, the reflection layer has a reflectance of 85% or more, more preferably 90% or more, with respect to the irradiated light.

As a material that can be used for the reflective layer, for example, silver, gold, platinum, copper, an alloy containing aluminum, an alloy containing silver, or indium oxide-tin oxide can be used.

The thickness of the reflective layer varies depending on the material, but is preferably 100 nm or more. By setting it as a film thickness of 100 nm or more, it can suppress that the irradiated light permeate | transmits a reflective layer.

Moreover, when providing a reflection layer, it is preferable to form a heat insulation layer between light absorption layers. The heat insulating layer is preferably formed using a material having a transmittance of 60% or more with respect to the light to be irradiated and a thermal conductivity smaller than that of the material used for the reflective layer and the light absorbing layer. When the thermal conductivity of the heat insulating layer is low, heat obtained from the irradiated light can be efficiently used for film formation. As a material used for the heat insulating layer, for example, titanium oxide, silicon oxide, silicon nitride oxide, zirconium oxide, silicon carbide, or the like can be used.

  Unlike the case where an EL layer is formed using a conventional wet method, it is not necessary to consider the solubility of an already formed layer, so that the choice of the type of material for film formation is widened. Further, the number of layers to be stacked can be freely set. Therefore, a light-emitting device having a desired stacked structure can be manufactured using a desired material. In particular, when the substrate is increased in size, it is important in terms of improving the performance of the light-emitting device that the type of material used and the laminated structure can be freely designed.

  Embodiments of the present invention will be described below.

(Embodiment 1)
In this embodiment mode, a deposition substrate and a deposition method using the deposition substrate according to the present invention will be described. Note that in this embodiment mode, a case where a red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer are formed with a space therebetween is described with reference to FIGS. In this specification, a substrate provided with a material to be deposited and used for deposition on a deposition target substrate is hereinafter referred to as a deposition substrate (first substrate). In addition, a substrate that later becomes a part of the display panel is referred to as a second substrate.

A light absorption layer 102 is formed on the first substrate 104 which is a deposition substrate. For example, a glass substrate, a quartz substrate, or the like can be used as the first substrate 104. A glass substrate or a quartz substrate is less likely to adsorb or adhere impurities (such as moisture) than a film substrate or the like. Thus, impurities can be prevented from being mixed during film formation.

The light absorption layer 102 is patterned so as to correspond to a region desired to be formed on the second substrate. Here, the upper surface shape of the light absorption layer 102 is a rectangle. A first partition 101 is provided between the plurality of light absorption layers 102. The first partition 101 is preferably subjected to a liquid repellent treatment on the surface in advance, and serves to assist the position control of the material liquid discharged from the nozzle.

First, as shown in FIG. 1A, the material liquid is discharged from the nozzle by pumping. A bottle that stores the material liquid is connected to a material liquid pressure feed pump via a tube that serves as a flow path for the material liquid, and the material liquid is discharged from the opening of the nozzle by the pressure of the material liquid pressure feed pump. A pump such as a sand pump, a piston pump, or a squeeze pump, or a tank type device can be used as the material liquid pressure feed pump. In addition, a flow meter, a pressure meter, a thermometer, a filter for removing foreign matter, and the like are provided between the material liquid feed pump and the nozzle, and control is performed so that a certain amount of flow flows from the nozzle opening. The material liquid is drawn by relatively moving the nozzle and the first substrate 104. In addition, the discharge start from a nozzle and a discharge stop can be performed by controlling the pressure of a material hydraulic pump. Here, there are three heads, and the material liquid is discharged from the nozzles of the heads, that is, the first nozzle 113R, the second nozzle 113G, and the third nozzle 113B, respectively. A first material liquid 112R for forming a red light emitting layer is discharged from the first nozzle 113R. Further, the second material liquid 112G for forming a green light emitting layer is discharged from the second nozzle 113G. Further, the third material liquid 112B for forming a blue light emitting layer is discharged from the third nozzle 113B. In FIG. 1B, the state in which the material liquid is connected to both the nozzle and the light absorption layer is shown as an example, but there is no particular limitation, and the distance between the nozzle tip and the surface of the light absorption layer, the viscosity of the material liquid, Depending on the pump pressure or the like, the material liquid may be interrupted while reaching the light absorption layer from the nozzle tip.

If necessary, after discharging the material liquid, heat treatment for drying or baking is performed.

Through the above steps, the first material layer 103R, the second material layer 103G, and the third material layer 103B are formed in each of the regions surrounded by the first partition wall 101 as illustrated in FIG. 1 substrate 104 is formed.

Next, as illustrated in FIG. 1B, on one surface of the first substrate 104, the light absorption layer 102, the first material layer 103 </ b> R, the second material layer 103 </ b> G, and the third material A second substrate 137 which is a substrate which will be part of the display panel later is disposed at a position facing the surface on which the layer 103B is formed. Then, the first substrate 104 and the second substrate 137 are aligned to face each other close to each other.

On the second substrate 137, a first electrode 138 that serves as one electrode of the light-emitting element and a second partition wall 139 are formed in advance. A hole injection layer 141 and a hole transport layer 145 are also stacked.

Note that the hole injection layer 141 and the hole transport layer 145 may be formed using a conventional resistance heating method or the like, or the film formation method of the present invention may be used.

  Next, as shown in FIG. 1C, the back surface of the first substrate 104 (the light absorption layer 102, the first material layer 103R, the second material layer 103G, and the third material layer 103B is formed under reduced pressure. The light 110 is irradiated from the (non-formed surface) side. The light 110 uses light from a lamp light source or light from a laser light source. At this time, the light applied to the light absorption layer 102 formed over the first substrate 104 is absorbed.

Then, the light absorbed by the light absorption layer 102 is converted into heat, and the heat is converted into the first material layer 103 </ b> R, the second material layer 103 </ b> G, and the third material layer in the regions in contact with the respective light absorption layers 102. 103, film formation is performed at a position overlapping with the first electrode 138 formed on the second substrate 137. Here, the red light-emitting layer 146, the green light-emitting layer 147, and the blue light-emitting layer 148 of the light-emitting element are simultaneously formed on the second substrate 137 by irradiation with lamp light. The lamp light does not require a mechanism for scanning as compared with a point light source such as a laser light source, and can form a film in a short time.

After the light emitting layer is formed, an electron transport layer is stacked on the light emitting layer, an electron injection layer is further stacked, and finally a second electrode is formed. Note that the second electrode is formed by a sputtering method, an electron beam method, or the like. Through the above process, a light-emitting diode including at least a first electrode, a second electrode, and a light-emitting layer therebetween is manufactured over the second substrate 137.

In this embodiment mode, a full-color light-emitting device is described as an example using three colors of a red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer. Alternatively, a light emitting device using light emitting layers of four or more colors may be used.

Further, the electron transport layer and the electron injection layer can be formed by the same procedure as that for the light emitting layer. In that case, a film formation substrate for forming the electron transport layer and a film formation substrate for forming the electron injection layer may be prepared. Alternatively, the light-emitting device may be configured to efficiently extract the emission colors of the respective colors by changing the film thickness of the electron transport layer or the electron injection layer in accordance with the emission color.

In this example, the EL layer provided between the first electrode and the second electrode has five layers, that is, a stack of a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer. However, the present invention is not particularly limited, and a hole transport layer, a light emitting layer, and an electron transport layer may be stacked, and the practitioner may appropriately design in consideration of the light emitting material, the light emission efficiency, and the like.

  In addition, in manufacturing a light-emitting device capable of full-color display described in this embodiment, application of the present invention can reduce waste of a desired material and form a film over a deposition target substrate. It is. Therefore, the utilization efficiency of the material can be improved and the manufacturing cost can be reduced.

  In the present invention, the film thickness of the film formed on the deposition target substrate can be controlled by controlling the film thickness of the material layer formed on the deposition substrate by pumping. A film thickness monitor is not required when a film is formed on the film formation substrate. Therefore, it is not necessary for the user to adjust the film formation rate using the film thickness monitor, and the film formation process can be fully automated. Therefore, productivity can be improved.

An example of a stacked structure of the light-emitting element thus obtained is shown in FIGS.

In the light-emitting element illustrated in FIG. 2A, a first electrode 902, an EL layer 903 formed using only the light-emitting layer 913, and a second electrode 904 are sequentially stacked over a substrate 901. One of the first electrode 902 and the second electrode 904 functions as an anode, and the other functions as a cathode. The holes injected from the anode and the electrons injected from the cathode are recombined in the EL layer 903, so that light emission can be obtained. In this embodiment mode, the first electrode 902 is an electrode that functions as an anode, and the second electrode 904 is an electrode that functions as a cathode.

  2B illustrates the case where the EL layer 903 in FIG. 2A has a structure in which a plurality of layers are stacked. Specifically, the light-emitting element in FIG. The hole injection layer 911, the hole transport layer 912, the light emitting layer 913, the electron transport layer 914, and the electron injection layer 915 are sequentially provided. Note that the EL layer 903 functions as long as it has at least the light-emitting layer 913 as illustrated in FIG. 2A. Therefore, it is not necessary to provide all of these layers, and the EL layer 903 can be appropriately selected as necessary. That's fine.

  A substrate 901 illustrated in FIG. 2 corresponds to the second substrate 137 in FIG.

  The first electrode 902 and the second electrode 904 can be formed using various metals, alloys, electrically conductive compounds, mixtures thereof, and the like. Specifically, for example, indium tin oxide (ITO), indium oxide-tin oxide containing silicon or silicon oxide, indium zinc oxide (IZO), tungsten oxide, and oxide. Examples thereof include indium oxide containing zinc. In addition, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium ( Pd), or a nitride of a metal material (for example, titanium nitride).

  These materials are usually formed by sputtering. For example, indium oxide-zinc oxide can be formed by a sputtering method using a target in which 1 to 20 wt% of zinc oxide is added to indium oxide. Further, indium oxide containing tungsten oxide and zinc oxide can be formed by a sputtering method using a target containing 0.5 to 5 wt% tungsten oxide and 0.1 to 1 wt% zinc oxide with respect to indium oxide. it can. In addition, a sol-gel method or the like may be applied to produce the ink-jet method or the spin coat method.

  Alternatively, aluminum (Al), silver (Ag), an alloy containing aluminum, or the like can be used. In addition, materials having a small work function, elements belonging to Group 1 or Group 2 of the periodic table of elements, that is, alkali metals such as lithium (Li) and cesium (Cs), and magnesium (Mg) and calcium (Ca) Alkaline earth metals such as strontium (Sr), and alloys containing these (aluminum, magnesium and silver alloys, aluminum and lithium alloys), rare earth metals such as europium (Eu), ytterbium (Yb), and the like An alloy containing the same can also be used.

  A film of an alkali metal, an alkaline earth metal, or an alloy containing these can be formed using a vacuum evaporation method. An alloy containing an alkali metal or an alkaline earth metal can also be formed by a sputtering method. Further, a silver paste or the like can be formed by an inkjet method or the like. In addition, the first electrode 902 and the second electrode 904 are not limited to a single layer film and can be formed using a stacked film.

  Note that in order to extract light emitted from the EL layer 903 to the outside, one or both of the first electrode 902 and the second electrode 904 are formed so as to pass light. For example, a light-transmitting conductive material such as indium tin oxide is used, or silver, aluminum, or the like is formed to have a thickness of several nanometers to several tens of nanometers. Alternatively, a stacked structure of a thin metal film such as silver or aluminum and a thin film using a light-transmitting conductive material such as an ITO film can be used.

  Note that the EL layer 903 (a hole injection layer 911, a hole transport layer 912, a light emission layer 913, an electron transport layer 914, or an electron injection layer 915) of the light-emitting element described in this embodiment is formed using a material liquid from a nozzle by pumping. Can be formed by applying a film formation method in which a material layer of a film formation substrate is discharged to irradiate light.

  For example, in the case of forming the light-emitting element illustrated in FIG. 2A, a solution containing a material for forming the EL layer 903 is prepared, and a material liquid is discharged from a nozzle by pumping to form a material layer of a deposition substrate. Then, an EL layer 903 is formed over the first electrode 902 over the substrate 901 using this deposition substrate. Then, by forming the second electrode 904 over the EL layer 903, the light-emitting element illustrated in FIG. 2A can be obtained.

  Various materials can be used for the light-emitting layer 913. For example, a fluorescent compound that emits fluorescence or a phosphorescent compound that emits phosphorescence can be used.

  Alternatively, the light-emitting layer 913 can have a structure in which a substance having high light-emitting properties (dopant material) is dispersed in another substance (host material). By using a structure in which a highly light-emitting substance (dopant material) is dispersed in another substance (host material), crystallization of the light-emitting layer can be suppressed. In addition, concentration quenching due to a high concentration of a light-emitting substance can be suppressed.

  As a substance that disperses a highly luminescent substance, when the luminescent substance is a fluorescent compound, the singlet excitation energy (energy difference between the ground state and the singlet excited state) is larger than that of the fluorescent compound. It is preferable to use a substance. In the case where the light-emitting substance is a phosphorescent compound, it is preferable to use a substance having a triplet excitation energy (energy difference between the ground state and the triplet excited state) larger than that of the phosphorescent compound.

  In the case where a structure in which a light-emitting substance (dopant material) is dispersed in another substance (host material) is used as the light-emitting layer 913, a host material and a guest material are used as a material layer over a deposition substrate. A mixed layer may be formed. Alternatively, the material layer over the deposition substrate may have a structure in which a layer containing a host material and a layer containing a dopant material are stacked. By forming the light-emitting layer 913 using the deposition substrate having the material layer having such a structure, the light-emitting layer 913 includes a substance that disperses the light-emitting material (host material), a substance having high light-emitting property (dopant material), and the like. The material (host material) in which the light-emitting material is dispersed is dispersed in a material (dopant material) having high light-emitting properties. Note that as the light-emitting layer 913, two or more kinds of host materials and dopant materials may be used, or two or more kinds of dopant materials and host materials may be used. Two or more types of host materials and two or more types of dopant materials may be used.

  In the case of forming the light-emitting element illustrated in FIG. 2B, each layer of the EL layer 903 (a hole injection layer 911, a hole transport layer 912, an electron transport layer 914, and an electron injection layer 915) is formed. A film-formation substrate having a material layer formed of a material to be formed is prepared for each layer, and a different film-formation substrate is used for each layer deposition to irradiate light, and the first electrode over the substrate 901 An EL layer 903 can be formed over the substrate 902. Then, by forming the second electrode 904 over the EL layer 903, the light-emitting element illustrated in FIG. 2B can be obtained.

For example, as the hole injection layer 911, molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, manganese oxide, or the like can be used. In addition, the hole injection layer can be formed using a phthalocyanine-based compound such as phthalocyanine (abbreviation: H ₂ Pc) or copper phthalocyanine (abbreviation: CuPc).

  As the hole-injecting layer 911, a layer containing a substance having a high hole-transport property and a substance showing an electron-accepting property can be used. A layer including a substance having a high hole-transport property and a substance having an electron-accepting property has a high carrier density and an excellent hole-injection property. In addition, by using a layer containing a substance having a high hole transporting property and a substance showing an electron accepting property as a hole injection layer in contact with the electrode functioning as the anode, the work function of the electrode material functioning as the anode can be reduced. Regardless, various metals, alloys, electrically conductive compounds, mixtures thereof, and the like can be used.

  The layer containing a substance having a high hole-transport property and a substance having an electron-accepting property includes, for example, a material layer in which a layer containing a substance having a high hole-transport property and a layer containing a substance having an electron-accepting property are stacked. It can be formed by using a deposition substrate.

  As a substance having an electron accepting property used for the hole injection layer 911, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), chloranil, and the like can be used. Can be mentioned. Moreover, a transition metal oxide can be mentioned. In addition, oxides of metals belonging to Groups 4 to 8 in the periodic table can be given. Specifically, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide are preferable because of their high electron accepting properties. Among these, molybdenum oxide is especially preferable because it is stable in the air, has a low hygroscopic property, and is easy to handle.

As the substance having a high hole-transport property used for the hole-injection layer 911, various compounds such as an aromatic amine compound, a carbazole derivative, and an aromatic hydrocarbon can be used. Note that the substance having a high hole-transport property used for the hole-injection layer is preferably a substance having a hole mobility of 10 ⁻⁶ cm ² / Vs or higher. Note that other than these substances, any substance that has a property of transporting more holes than electrons may be used. Hereinafter, substances having a high hole-transport property that can be used for the hole-injection layer 911 are specifically listed.

  For example, as an aromatic amine compound that can be used for the hole injection layer 911, for example, 4,4′-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (abbreviation: NPB), N, N′-bis (3-methylphenyl) -N, N′-diphenyl- [1,1′-biphenyl] -4,4′-diamine (abbreviation: TPD), 4,4 ′, 4 ″ -tris ( N, N-diphenylamino) triphenylamine (abbreviation: TDATA), 4,4 ′, 4 ″ -tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine (abbreviation: MTDATA), 4,4′-bis [N- (spiro-9,9′-bifluoren-2-yl) -N-phenylamino] biphenyl (abbreviation: BSPB) or the like can be used. N, N′-bis (4-methylphenyl) (p-tolyl) -N, N′-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4′-bis [N- (4-diphenyl) Aminophenyl) -N-phenylamino] biphenyl (abbreviation: DPAB), 4,4′-bis (N- {4- [N ′-(3-methylphenyl) -N′-phenylamino] phenyl} -N— Phenylamino) biphenyl (abbreviation: DNTPD), 1,3,5-tris [N- (4-diphenylaminophenyl) -N-phenylamino] benzene (abbreviation: DPA3B), and the like.

  As a carbazole derivative that can be used for the hole-injection layer 911, specifically, 3- [N- (9-phenylcarbazol-3-yl) -N-phenylamino] -9-phenylcarbazole (abbreviation: PCzPCA1) ), 3,6-bis [N- (9-phenylcarbazol-3-yl) -N-phenylamino] -9-phenylcarbazole (abbreviation: PCzPCA2), 3- [N- (1-naphthyl) -N- (9-phenylcarbazol-3-yl) amino] -9-phenylcarbazole (abbreviation: PCzPCN1) and the like can be given.

  Examples of the carbazole derivative that can be used for the hole-injection layer 911 include 4,4′-di (N-carbazolyl) biphenyl (abbreviation: CBP), 1,3,5-tris [4- (N-carbazolyl). Phenyl] benzene (abbreviation: TCPB), 9- [4- (10-phenyl-9-anthryl) phenyl] -9H-carbazole (abbreviation: CzPA), 1,4-bis [4- (N-carbazolyl) phenyl] -2,3,5,6-tetraphenylbenzene and the like can be used.

Examples of aromatic hydrocarbons that can be used for the hole injection layer 911 include 2-tert-butyl-9,10-di (2-naphthyl) anthracene (abbreviation: t-BuDNA), 2-tert- Butyl-9,10-di (1-naphthyl) anthracene, 9,10-bis (3,5-diphenylphenyl) anthracene (abbreviation: DPPA), 2-tert-butyl-9,10-bis (4-phenylphenyl) ) Anthracene (abbreviation: t-BuDBA), 9,10-di (2-naphthyl) anthracene (abbreviation: DNA), 9,10-diphenylanthracene (abbreviation: DPAnth), 2-tert-butylanthracene (abbreviation: t-) BuAnth), 9,10-bis (4-methyl-1-naphthyl) anthracene (abbreviation: DMNA), 9,10-bis [2 (1-naphthyl) phenyl] -2-tert-butyl-anthracene, 9,10-bis [2- (1-naphthyl) phenyl] anthracene, 2,3,6,7-tetramethyl-9,10-di ( 1-naphthyl) anthracene, 2,3,6,7-tetramethyl-9,10-di (2-naphthyl) anthracene, 9,9′-bianthryl, 10,10′-diphenyl-9,9′-bianthryl, 10,10′-bis (2-phenylphenyl) -9,9′-bianthryl, 10,10′-bis [(2,3,4,5,6-pentaphenyl) phenyl] -9,9′-bianthryl , Anthracene, tetracene, rubrene, perylene, 2,5,8,11-tetra (tert-butyl) perylene, and the like. In addition, pentacene, coronene, and the like can also be used. Thus, it is more preferable to use an aromatic hydrocarbon having a hole mobility of 1 × 10 ⁻⁶ cm ² / Vs or more and having 14 to 42 carbon atoms.

  Note that the aromatic hydrocarbon that can be used for the hole-injecting layer 911 may have a vinyl skeleton. As the aromatic hydrocarbon having a vinyl group, for example, 4,4′-bis (2,2-diphenylvinyl) biphenyl (abbreviation: DPVBi), 9,10-bis [4- (2,2- Diphenylvinyl) phenyl] anthracene (abbreviation: DPVPA) and the like.

  The hole injection layer 911 can be formed by using a film formation substrate having a material layer in which a layer containing a substance having a high hole-transport property and a layer containing an electron-accepting substance are stacked. it can. In the case where a metal oxide is used as the substance having an electron-accepting property, a layer including a substance having a high hole-transport property may be formed over the deposition substrate, and then a layer including the metal oxide may be stacked. preferable. This is because a metal oxide often has a higher vapor deposition temperature than a substance having a high hole transporting property. By using the deposition substrate having such a stacked structure, a substance having a high hole-transport property and a metal oxide can be efficiently deposited. In addition, local concentration deviation can be suppressed in the formed film. For example, after a material liquid is discharged from a nozzle by pumping to form a layer containing a substance having a high hole-transporting property, a layer containing a metal oxide is further laminated thereon by a vapor deposition method to form a deposition substrate. By preparing and irradiating light, a mixed layer including a substance having a high hole-transport property and a metal oxide can be easily formed on the deposition target substrate. There are few kinds of solvents that dissolve or disperse both the substance having a high hole transporting property and the metal oxide, and it is difficult to prepare a solution containing both of them. Therefore, it has been difficult to form directly using a conventional wet method.

  In addition, a layer including a substance having a high hole-transport property and a substance having an electron-accepting property has not only a hole-injection property but also a good hole-transport property. It may be used as a transport layer.

The hole transport layer 912 is a layer containing a substance having a high hole transport property, and examples of the substance having a high hole transport property include 4,4′-bis [N- (1-naphthyl) -N -Phenylamino] biphenyl (abbreviation: NPB or α-NPD) and N, N′-bis (3-methylphenyl) -N, N′-diphenyl- [1,1′-biphenyl] -4,4′-diamine (Abbreviation: TPD), 4,4 ′, 4 ″ -tris (N, N-diphenylamino) triphenylamine (abbreviation: TDATA), 4,4 ′, 4 ″ -tris [N- (3-methyl Phenyl) -N-phenylamino] triphenylamine (abbreviation: MTDATA), 4,4′-bis [N- (spiro-9,9′-bifluoren-2-yl) -N-phenylamino] biphenyl (abbreviation: Use aromatic amine compounds such as BSPB) It can be. The substances described here are mainly substances having a hole mobility of 10 ⁻⁶ cm ² / Vs or higher. Note that other than these substances, any substance that has a property of transporting more holes than electrons may be used. Note that the layer containing a substance having a high hole-transport property is not limited to a single layer, and two or more layers containing the above substances may be stacked.

The electron-transport layer 914 is a layer containing a substance having a high electron-transport property. For example, tris (8-quinolinolato) aluminum (abbreviation: Alq), tris (4-methyl-8-quinolinolato) aluminum (abbreviation: Almq ₃ ). Bis (10-hydroxybenzo [h] quinolinato) beryllium (abbreviation: BeBq ₂ ), bis (2-methyl-8-quinolinolato) (4-phenylphenolato) aluminum (abbreviation: BAlq), quinoline skeleton or benzoquinoline A metal complex having a skeleton can be used. In addition, bis [2- (2-hydroxyphenyl) benzoxazolate] zinc (abbreviation: Zn (BOX) ₂ ), bis [2- (2-hydroxyphenyl) benzothiazolate] zinc (abbreviation: Zn (BTZ)) A metal complex having an oxazole-based or thiazole-based ligand such as ₂ ) can also be used. In addition to metal complexes, 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis [5 -(P-tert-butylphenyl) -1,3,4-oxadiazol-2-yl] benzene (abbreviation: OXD-7), 3- (4-biphenylyl) -4-phenyl-5- (4- tert-Butylphenyl) -1,2,4-triazole (abbreviation: TAZ01) bathophenanthroline (abbreviation: BPhen), bathocuproin (abbreviation: BCP), and the like can also be used. The substances mentioned here are mainly substances having an electron mobility of 10 ⁻⁶ cm ² / Vs or higher. Note that other than the above substances, any substance that has a property of transporting more electrons than holes may be used for the electron-transport layer. Further, the electron-transport layer is not limited to a single layer, and two or more layers including the above substances may be stacked.

As the electron injection layer 915, an alkali metal compound such as lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF ₂ ), or the like, or an alkaline earth metal compound can be used. Further, a layer in which a substance having an electron transporting property and an alkali metal or an alkaline earth metal are combined can also be used. For example, Alq containing magnesium (Mg) can be used. Note that it is more preferable to use a layer in which an electron-transporting substance and an alkali metal or an alkaline earth metal are combined as the electron-injecting layer because electron injection from the second electrode 904 occurs efficiently.

  Note that there is no particular limitation on the layered structure of the EL layer 903, and a substance having a high electron-transport property, a substance having a high hole-transport property, a substance having a high electron-injection property, a substance having a high hole-injection property, or a bipolar property A layer including a substance (a substance having a high electron and hole transporting property) and the light-emitting layer may be combined as appropriate.

  Light emission obtained in the EL layer 903 is extracted outside through one or both of the first electrode 902 and the second electrode 904. Accordingly, one or both of the first electrode 902 and the second electrode 904 are light-transmitting electrodes. In the case where only the first electrode 902 is a light-transmitting electrode, light is extracted from the substrate 901 side through the first electrode 902. In the case where only the second electrode 904 is a light-transmitting electrode, light is extracted from the side opposite to the substrate 901 through the second electrode 904. In the case where each of the first electrode 902 and the second electrode 904 is a light-transmitting electrode, light passes through the first electrode 902 and the second electrode 904, and is on the substrate 901 side and the opposite side to the substrate 901. Taken from both.

  Note that FIG. 2 illustrates the structure in which the first electrode 902 functioning as an anode is provided on the substrate 901 side; however, the second electrode 904 functioning as a cathode may be provided on the substrate 901 side.

(Embodiment 2)
In this embodiment mode, a relationship between an example of the top surface shape of the first partition wall, an example of the top surface shape of the second partition wall, and the application direction will be described with reference to FIGS.

FIG. 3A illustrates an example of a partial top view of a deposition substrate, in which a rectangular light absorption layer 202 and a first partition wall 201 having a rectangular opening 206 are formed over a first substrate 204. Show.

FIG. 3B shows a top view after three kinds of material liquids are applied from three kinds of nozzles by pumping. As shown in FIG. 3B, a first material layer 203R, a second material layer 203G, and a third material layer 203B are formed in a stripe pattern over the first substrate 204. Here, the pumping is stopped to form the first material layer 203R. However, the first material layer 203R may be applied to the outside of the partition wall 201 without being stopped, and the first and fourth rows may be connected. This is because the portion that is heated by the subsequent light irradiation is a region that overlaps with the light absorption layer 202, and the first material layer outside the partition, which is a region that does not overlap, is not heated, and the substrate that later becomes a part of the panel This is because no film is formed. Note that the trajectory 205 of one nozzle moved with respect to the first substrate 204 is indicated by a chain line arrow in FIG. The long side direction of the light absorption layer corresponds to the coating direction. FIG. 3B shows an example in which the next red light emitting layer is formed by reversing the coating direction as in a single stroke.

Although only four rows of light absorption layers are shown in this embodiment mode, a plurality of rows are provided in accordance with the number of pixels of a panel to be manufactured.

FIG. 3C is an example of a partial top view of the second substrate 137 over which the first electrode 138 serving as one electrode of the light-emitting element and the second partition 139 are formed. A second partition 139 is formed so as to cover the periphery of the rectangular first electrode 138, and an opening is provided. Note that since the material layer is formed in a stripe shape, the interval in the application direction can be narrowed in the plurality of openings of the second partition wall 139, and the aperture ratio can be improved. In the plurality of openings of the second partition wall 139, the interval in the application direction can be narrower than at least the interval in the direction perpendicular to the application direction. As can be seen by comparing FIG. 3A and FIG. 3C, the top surface shapes of the first partition wall 201 and the second partition wall 139 are different.

The first substrate 204 in FIG. 3B and the second substrate 137 in FIG. 3C are arranged to face each other, and light irradiation is performed through the first substrate 204, so that FIG. As shown in D), the red light emitting layer 146, the green light emitting layer 147, and the blue light emitting layer 148 of the light emitting element are formed on the second substrate 137 at the same time. Here, laser light irradiation is performed. In this embodiment, laser light having a wavelength of 532 nm is used as laser light, and laser light having a frequency of 10 MHz or more and a pulse width of 100 fs to 10 ns is used. When irradiating light with a wavelength of 532 nm, by setting the film thickness of the light absorption layer 202 to 50 nm or more and 200 nm or less, the irradiated light can be efficiently absorbed and generated. The scanning of the laser beam may be a scanning direction that is parallel to the coating direction or a scanning direction that is perpendicular to the coating direction. Laser light with a frequency of 10 MHz or more and a pulse width of 100 fs or more and 10 ns or less used in this embodiment can be irradiated with laser light for a short time; therefore, heat diffusion can be suppressed and a fine pattern can be formed. Is possible. In addition, since laser light having a frequency of 10 MHz or more and a pulse width of 100 fs or more and 10 ns or less can be output, a large area can be processed at a time, and the time required for film formation can be reduced. Therefore, productivity can be improved.

Further, this embodiment mode can be freely combined with Embodiment Mode 1.

(Embodiment 3)
In this embodiment, another variation of the light absorption layer provided over the deposition substrate is described with reference to FIGS.

In the first embodiment, an example in which the upper surface shape of the light absorption layer is rectangular and arranged so as to be in a stripe shape is shown, but in this embodiment, the light absorption layer is provided in an area larger than the display panel size, An example in which the drawing of the material liquid is controlled by the first partition is shown.

As shown in FIG. 4A, a light absorption layer 302 and a first partition wall 301 are formed over a first substrate 304 which is a deposition substrate.

The opening pattern of the first partition wall 301 is formed so as to correspond to a region to be formed on the second substrate. The first partition 301 is preferably subjected to a liquid repellent treatment on the surface in advance, and serves to control the position of the material liquid discharged from the nozzle.

First, as in the first embodiment, the material liquid is discharged from the nozzle by pumping as shown in FIG. Here, there are three heads, and the material liquid is discharged from the nozzles of the heads, that is, the first nozzle 113R, the second nozzle 113G, and the third nozzle 113B, respectively.

Through the above steps, as illustrated in FIG. 4B, the first material layer 303R, the second material layer 303G, and the third material layer 303B are formed in each of the regions surrounded by the first partition wall 301. 1 substrate 304 is formed.

Next, as illustrated in FIG. 4C, a substrate that will be a part of the display panel later on the one surface of the first substrate 304 that faces the surface on which the light absorption layer 302 is formed. A second substrate 337 is disposed. Then, the first substrate 304 and the second substrate 337 are aligned to face each other close to each other. Then, light 310 is irradiated from the back surface (the surface where the light absorption layer 302 is not formed) side of the first substrate 304 as shown in FIG. 4C under reduced pressure. The light 310 uses light from a lamp light source or light from a laser light source. At this time, the light applied to the light absorption layer 302 formed over the first substrate 304 is absorbed.

Note that the second substrate 337 is formed with a first electrode 338 to be one electrode of the light-emitting element, a thin film transistor 333 electrically connected to the first electrode, and a second partition 339 in advance. . A hole injection layer and a hole transport layer are also laminated.

In this embodiment mode, irradiated light is absorbed by the light absorption layer, so that light irradiation to the thin film transistor 333 can be blocked.

Then, the light absorbed by the light absorption layer 302 is converted into heat, and the heat is converted into the first material layer 303 </ b> R, the second material layer 303 </ b> G, and the third material layer in regions in contact with the respective light absorption layers 302. By applying to 303, film formation is performed at a position overlapping with the first electrode 338 formed on the second substrate 337. Here, a red light-emitting layer 346, a green light-emitting layer 347, and a blue light-emitting layer 348 of the light-emitting element are formed at the same time on the second substrate 337 by irradiation with lamp light.

After the light emitting layer is formed, an electron transport layer is stacked on the light emitting layer, an electron injection layer is further stacked, and finally a second electrode is formed. Note that the second electrode is formed by a sputtering method, an electron beam method, or the like. Through the above process, a light-emitting diode including at least a first electrode, a second electrode, and a light-emitting layer therebetween is manufactured over the second substrate 337.

Further, this embodiment mode can be freely combined with Embodiment Mode 1 or Embodiment Mode 2.

Embodiment Mode 4 In this embodiment mode, an example in which a reflective layer is provided in addition to a light absorption layer provided on a deposition substrate will be described with reference to FIGS.

As shown in FIG. 5A, a light absorption layer 402, a light reflection layer 405, and a first partition wall 401 are formed over a first substrate 404 which is a deposition substrate.

The light absorbing layer 402 has a rectangular top surface and is arranged in a stripe shape. The light reflecting layer 405 is formed on the first partition wall 401 and is disposed so as to block between the light absorbing layers when light is irradiated later.

The reflective layer 405 is a layer for reflecting light passing between the light absorption layers in order to protect elements such as thin film transistors and wirings from the irradiated light during subsequent light irradiation.

In this embodiment mode, since the light reflecting layer 405 is provided over the first partition wall 401, the material liquid can be prevented from being discharged into adjacent grooves. That is, the light reflection layer 405 can also contribute to the position control of the material liquid, like the first partition wall 401. The reflective layer 405 is preferably formed of a material having a high reflectance with respect to light to be irradiated. Specifically, the reflective layer 405 has a reflectance of 85% or more, more preferably 90% or more, with respect to the irradiated light.

The opening pattern of the first partition wall 401 is formed so as to correspond to a region desired to be formed on the second substrate. As in the first embodiment, the material liquid is discharged from the nozzle by pumping.

Then, as shown in FIG. 5B, a first material layer 403R, a second material layer 403G, and a third material layer 403B are provided in the regions surrounded by the first partition wall 401 and the light reflecting layer 405, respectively. Is formed on the first substrate 404.

Next, as illustrated in FIG. 5C, the substrate that will be a part of the display panel later on the one surface of the first substrate 404 that is opposed to the surface on which the light absorption layer 402 is formed. A second substrate 437 is disposed. Then, the first substrate 404 and the second substrate 437 are aligned to face each other close to each other. Then, light 410 is irradiated from the back surface (the surface where the light absorption layer 402 is not formed) side of the first substrate 404 as shown in FIG. 4C under reduced pressure. The light 410 uses light from a lamp light source or light from a laser light source. At this time, light applied to the light absorption layer 402 formed over the first substrate 404 is absorbed.

Note that the second substrate 437 is formed with a first electrode 438 to be one electrode of the light-emitting element, a thin film transistor 433 electrically connected to the first electrode, and a second partition 439 in advance. . A hole injection layer and a hole transport layer are also laminated.

In this embodiment mode, the irradiated light is reflected by the light reflecting layer 405 and the light absorbing layer 402, so that light irradiation to the thin film transistor 433 can be blocked.

Then, the light absorbed by the light absorption layer 402 is converted into heat, and the heat is applied to each material layer in a region in contact with each light absorption layer 402, whereby the first substrate 437 formed on the second substrate 437 is formed. Film formation is performed at a position overlapping with the electrode 438. Here, the red light emitting layer 446, the green light emitting layer 447, and the blue light emitting layer 448 of the light emitting element are formed at the same time on the second substrate 437 by irradiation with lamp light.

After the light emitting layer is formed, an electron transport layer is stacked on the light emitting layer, an electron injection layer is further stacked, and finally a second electrode is formed. Note that the second electrode is formed by a sputtering method, an electron beam method, or the like. Through the above process, a light-emitting diode including at least a first electrode, a second electrode, and a light-emitting layer therebetween is manufactured over the second substrate 437.

Further, this embodiment mode can be freely combined with Embodiment Mode 1, Embodiment Mode 2, or Embodiment Mode 3.

Embodiment Mode 5 In this embodiment mode, an example in which a light absorption layer, a reflective layer, and a heat insulating layer are provided on a deposition substrate will be described with reference to FIGS.

As shown in FIG. 6A, a first substrate 604 which is a deposition substrate includes a light reflecting layer 605, a heat insulating layer 606 covering the light reflecting layer 605, and a light absorbing layer 602 over the heat insulating layer. Is formed.

The opening pattern of the light reflecting layer 605 is formed so as to correspond to a region desired to be formed on the second substrate.

The light absorption layer 602 is provided in an area wider than the display panel size.

As in the first embodiment, the material liquid is discharged from the nozzle by pumping. The portion where the reflective layer 605 is formed becomes a convex portion, and the height is increased by the heat insulating layer and the light absorption layer formed thereon, and this portion serves as a position control similar to the partition. Then, a first material layer 603R, a second material layer 603G, and a third material layer 603B are formed over the first substrate 604 in each of the regions surrounded by the protrusions.

The reflective layer 605 reflects light irradiated to other portions in order to selectively irradiate light to a part of the light absorption layer 602 when light is irradiated later to form a film on the second substrate. Of layers. Therefore, the reflective layer 605 is preferably formed using a material having a high reflectance with respect to light to be irradiated. Specifically, the reflective layer 605 has a reflectivity of 85% or more, more preferably 90% or more, with respect to the irradiated light.

Various methods can be used for forming the opening in the reflective layer 605, but dry etching is preferably used. By using dry etching, the side wall of the opening becomes sharp and a fine pattern can be formed.

In the heat insulating layer 606, when a part of the light reflected by the reflective layer 605 out of the light irradiated at the time of film formation becomes heat and remains in the reflective layer, the heat is absorbed by the light absorption layer 602 and the material. This is a layer for preventing transmission to the layers 603R, 603G, and 603B. Therefore, the heat insulating layer 606 needs to use a material whose thermal conductivity is lower than the material forming the reflective layer 605 and the light absorption layer 602.

Next, a second substrate 637 which is a substrate to be a part of the display panel later is disposed on one surface of the first substrate 604 and facing the surface where the light absorption layer 602 is formed. . Then, the first substrate 604 and the second substrate 637 are aligned to face each other close to each other. Then, light 610 is irradiated from the back surface (the surface where the light absorption layer 602 is not formed) side of the first substrate 604 as shown in FIG. 6B under reduced pressure. Light 610 uses light from a lamp light source or light from a laser light source. At this time, light applied to the light absorption layer 602 formed over the first substrate 604 is absorbed.

Note that a first electrode 638 that serves as one electrode of the light-emitting element, a thin film transistor 633 that is electrically connected to the first electrode, and a second partition wall 639 are formed over the second substrate 637 in advance. . A hole injection layer and a hole transport layer are also laminated.

In this embodiment mode, irradiated light is absorbed by the light absorption layer and the light reflection layer, so that the thin film transistor 633 can be blocked from being irradiated with light.

Then, the light absorbed by the light absorption layer 602 is converted into heat, and the heat is applied to each material layer in a region in contact with each light absorption layer 602, whereby the first substrate formed on the second substrate 637 is formed. Film formation is performed at a position overlapping with the electrode 338. Here, a red light emitting layer 646, a green light emitting layer 647, and a blue light emitting layer 648 of the light emitting element are formed at the same time on the second substrate 637 by irradiation with lamp light.

After the light emitting layer is formed, an electron transport layer is stacked on the light emitting layer, an electron injection layer is further stacked, and finally a second electrode is formed. Note that the second electrode is formed by a sputtering method, an electron beam method, or the like. Through the above process, a light-emitting diode including at least a first electrode, a second electrode, and a light-emitting layer therebetween is manufactured over the second substrate 637.

Further, although an example in which an insulator serving as a partition wall is not formed over the deposition substrate is described in this embodiment, it may be selectively formed over the light absorption layer 602 above the position overlapping with the reflective layer 605.

Note that as a material used for the heat insulating layer 606, for example, titanium oxide, silicon oxide, silicon nitride oxide, zirconium oxide, silicon carbide, or the like can be used.

Moreover, although the film thickness of the heat insulation layer 606 changes with materials, it is preferable to set it as 10 nm or more and 2 micrometers or less, More preferably, you may be 100 nm or more and 600 nm or less. By setting the film thickness to 10 nm or more and 2 μm or less, the heat present in the reflection layer 605 is transmitted through the opening of the reflection layer 605 and the light present in the reflection layer 605 is absorbed by the light absorption layer 602 and the material layers 603R, 603G, and 603B. It has the effect of blocking the transmission to. Note that the heat insulating layer 606 is formed so as to cover the openings of the reflective layer 605 and the reflective layer 605 in FIG. 6A; however, the heat insulating layer may be formed only at a position overlapping with the reflective layer 605. .

In addition, as illustrated in FIG. 6B, in the case where light transmitted through the opening of the reflective layer 605 is transmitted through the heat insulating layer 606 and irradiated to the light absorption layer, the heat insulating layer 606 has a light-transmitting property. It is necessary to have. In this case, the heat insulating layer 606 according to the present invention needs to use a material having a low thermal conductivity and a high light transmittance. Specifically, it is preferable to use a material having a light transmittance of 60% or more for the heat insulating layer 606.

Further, this embodiment mode can be freely combined with Embodiment Mode 1, Embodiment Mode 2, Embodiment Mode 3, or Embodiment Mode 4.

  The present invention having the above-described configuration will be described in more detail with the following examples.

In this embodiment, an example of manufacturing a light-emitting device is shown using a manufacturing apparatus that manufactures the light-emitting device fully automatically.

FIG. 7 is an example showing a top view of the manufacturing apparatus.

The manufacturing apparatus shown in FIG. 7 includes a first transfer chamber 582 and a second transfer chamber 552, and these transfer chambers are connected via a first delivery chamber 551. Furthermore, it has the 3rd conveyance chamber 502, and is connected via the 2nd conveyance chamber 552 and the 2nd delivery chamber 501. FIG. Further, a sealing chamber 504 is provided and is connected via a third transfer chamber 502 and a third delivery chamber 503.

The second transfer chamber 552, the third transfer chamber 502, and the sealing chamber 504 are connected to an evacuation treatment chamber so that moisture or the like is not mixed therein, and the evacuation is performed to evacuate or the evacuation is performed. Thereafter, an inert gas can be introduced to bring the pressure to atmospheric pressure. As the evacuation processing chamber, a magnetic levitation type turbo molecular pump, a cryopump, or a dry pump is used. Thereby, the ultimate vacuum degree of the transfer chamber connected to each chamber can be set to 10 ⁻³ to 10 ⁻⁶ Pa, and the back diffusion of impurities from the pump side and the exhaust system can be controlled.

First, the first substrate 104 which is a deposition substrate is set in the first cassette chamber 571, the second cassette chamber 572, or the third cassette chamber 573. One of these three cassette chambers is selected according to the film to be deposited on the deposition substrate. Note that a light absorption layer 102 and a first partition wall 101 which are selectively formed in advance using a photolithography technique or the like are formed over the first substrate 104.

In the case where a material layer is selectively formed on the first substrate 104 by discharging a liquid material at a constant flow rate from the nozzle by pumping as shown in Embodiment Mode 1, the first cassette chamber 571 is faced up. Using the transfer unit 524 provided in the first cassette chamber 571, the sheet is transferred to the processing chamber 574 having a nozzle connected to the flow rate controller 583, and the material liquid is drawn. Note that the transport unit 524 can reverse the front and back of the substrate and can carry the substrate into the processing chamber 574 so that dust can be prevented from adhering to the light absorption layer of the first substrate 104. Alternatively, it may be set in the first cassette chamber 571 by a face-down method.

The processing chamber 574 includes a flow rate control device 583 having a mechanism in which a plurality of nozzles are arranged in a uniaxial direction, three types of bottles 581R, 581G, and 581B for storing a material liquid supplied to the flow rate control device 583, a substrate. And a stage 580 that moves in the XYθ direction is provided. The flow control device 583 includes a nozzle, a flow meter, a pressure gauge, a pump, and the like.

The first substrate on which the material liquid is drawn is transferred to the baking chamber 576 by the transfer unit 522 of the first transfer chamber 582 connected to the processing chamber 574, and is dried or baked. Note that the baking chamber 576 can heat a plurality of substrates and can also function as a stock chamber for stocking the first substrate.

When a material layer is formed on the entire surface of the first substrate 104 by using a coating apparatus using a spin coating method or a spray method, the coating layer is set in the second cassette chamber 572 by a face-up method, and coating is performed. Using the transfer unit 523 provided in the processing chamber 575 having the apparatus, the transfer is performed to the processing chamber 575 and coating is performed. Note that since the transport unit 523 can also reverse the front and back of the substrate and can be reversed and placed on the stage 578, it can prevent dust from adhering to the light absorption layer of the first substrate 104. Alternatively, it may be set in the second cassette chamber 572 by the face-down method.

The processing chamber 575 includes a nozzle for dropping the material liquid, a stage 578 for fixing and rotating the substrate, a control unit for controlling the number of rotations of the stage, a table 579 for placing the coated substrate, and a material liquid for the nozzle. A tank or the like is provided for supplying water.

The first substrate on which three types of material layers are formed is transferred to the baking chamber 576 by the transfer unit 522 of the first transfer chamber 582 connected to the processing chamber 575, and is dried or baked.

Further, when the material layer is formed on the first substrate by using the resistance heating method, the first transfer is set in the third cassette chamber 573 by the face-down method and connected to the third cassette chamber 573. It is transferred to the first delivery chamber 551 by the transfer unit 522 in the chamber 582. Further, the transfer unit 520 provided in the second transfer chamber 552 connected to the first delivery chamber 551 transfers the pretreatment chamber 553 to moisture and other gases contained in the substrate. In addition, annealing for deaeration is performed under vacuum (5 × 10 ⁻³ Torr (0.665 Pa) or less, preferably 10 ⁻⁴ to 10 ⁻⁶ Pa). And it conveys to the process chamber 555 by the conveyance unit 520, and performs vapor deposition by a resistance heating method.

The treatment chamber 555 is provided with a means for moving the evaporation source 557 along a trajectory indicated by a dotted line in the room, a means for fixing the substrate, a film thickness monitor, a vacuum exhaust treatment chamber, and the like. A plurality of crucibles are set in the vapor deposition source 557, and the vapor deposition material stored in the crucible is heated by a resistance heating method. In the treatment chamber 555, vapor deposition is performed by moving the vapor deposition source below the substrate set in a face-down manner. In the case where film formation is selectively performed using a vapor deposition mask, the vapor deposition mask stocked in the treatment chamber 554 may be transferred to the treatment chamber 555 and aligned with the substrate for vapor deposition.

The first substrate 104 which is set in the first cassette chamber 571, the second cassette chamber 572, or the third cassette chamber 573 and appropriately formed with a material layer in the processing chamber is transferred to the third transfer chamber 502. Then, the transfer unit 521 provided in the third transfer chamber 502 transfers the material layer to the laser beam irradiation chamber 515 in a state where the surface on which the material layer is provided is face up. Note that in the case where the material layer of the first substrate is formed by the vapor deposition method, since the face is down at the stage after the film formation, the substrate is reversed by the substrate reversing mechanism provided in the processing chamber 518. Then, it is transferred to the laser beam irradiation chamber 515.

The processing chamber 518 may be a chamber that not only inverts the substrate but also stocks a plurality of substrates. In addition, if the transport unit 521 can reverse the front and back of the substrate, the processing chamber 518 may not be provided with a substrate reversing mechanism, and may be used as a room for storing a plurality of substrates.

Further, the second substrate to be a film formation substrate is set face-down in the fourth cassette chamber 570, and is transferred to the first cassette by the transfer unit 522 in the first transfer chamber 582 connected to the fourth cassette chamber 570. To the delivery chamber 551. Further, the transfer unit 520 provided in the second transfer chamber 552 connected to the first delivery chamber 551 transfers the pretreatment chamber 553 to moisture and other gases contained in the second substrate. In order to remove, annealing for deaeration is performed in vacuum. In particular, when a TFT is provided on the second substrate, if an organic resin film is used as a material for an interlayer insulating film or a partition, depending on the organic resin material, moisture may be easily adsorbed and degassing may occur. Before forming the layer containing 100 ° C. to 250 ° C., preferably 150 ° C. to 200 ° C., for example, after heating for 30 minutes or more, vacuum heating is performed to remove adsorbed moisture by performing natural cooling for 30 minutes. It is effective.

In the case of manufacturing a passive matrix light-emitting device, at least a stripe-shaped first electrode is formed over the second substrate. In the case of manufacturing an active matrix light-emitting device, a second substrate includes a first electrode and a switching element electrically connected to the first electrode, such as an amorphous semiconductor film, A thin film transistor is formed in which a crystalline semiconductor film, a microcrystalline semiconductor film, or a single crystal semiconductor film is used as an active layer.

Then, the second substrate to be a film formation substrate is transferred to the second delivery chamber 501 by the transfer unit 520 and further provided in the third transfer chamber 502 connected to the second delivery chamber 501. The transfer unit 521 transfers the first electrode to the laser beam irradiation chamber 515 in a state where the surface on which the first electrode is provided is face down, that is, face down.

The laser beam irradiation chamber 515 has a window 120 at the bottom for introducing laser light emitted from the laser light source into the laser beam irradiation chamber.

After the first substrate is transferred to the laser beam irradiation chamber 515, the first substrate is aligned with the second substrate to be a film formation substrate, and the distance d between the substrates is held constant by the pair of substrate holding means 516. . Thereafter, the pair of substrates is irradiated with laser light, and the laser light irradiation region is relatively moved to scan the laser light.

FIG. 8 is a schematic diagram showing the positional relationship between the window 120 and the laser light source 803 during film formation.

The emitted laser light is output from a laser oscillation device 803, and a first optical system 804 for making the beam shape rectangular, a second optical system 805 for shaping, and a first optical system for making parallel rays. The optical path is bent in a direction perpendicular to the first substrate 104 by the reflection mirror 807. After that, the laser beam is allowed to pass through the light transmitting window 120 and the first substrate 104, and the light absorption layer 102 is irradiated with the laser beam. The window 120 can also function as a slit with a size equal to or smaller than the laser beam width.

The laser oscillation device 803 emits laser light having a frequency of 10 MHz or more and a pulse width of 100 fs to 10 ns. Laser light having a frequency of 10 MHz or more and a pulse width of 100 fs or more and 10 ns or less can be irradiated with laser light for a short time, so that heat diffusion can be suppressed and overlaps with the light absorption layer 102 before laser irradiation. The region size of the material layer and the region size formed on the second substrate after laser irradiation can be made substantially the same, a thin film is formed at the periphery of the film formation pattern, and the film formation pattern desired by the practitioner It is possible to reduce the enlargement. When a thin film is formed at the periphery of the film formation pattern, the outline of the film formation pattern is blurred, and it can be said that the blur of the outline can be reduced by laser light having a pulse width of 100 fs to 10 ns. The wavelength of the laser light is not particularly limited, and laser light having various wavelengths can be used. For example, laser light having a wavelength such as 355, 515, 532, 1030, or 1064 nm can be used.

In addition, the control device 816 is preferably interlocked so that it can also control the pair of substrate holding means 516 that moves the pair of substrates. Further, the control device 816 is preferably interlocked so that the laser oscillation device 803 can also be controlled. Furthermore, the control device 816 is preferably interlocked with a position alignment mechanism having an image sensor 808 for recognizing a position marker.

When the scanning of the laser light is completed, the material layer overlapping with the light absorption layer 102 disappears in the first substrate 104, and film formation is selectively performed on the second substrate 137 which is disposed to face the first substrate 104.

The first substrate 104 that has finished scanning with the laser light is recovered and can be reused if the remaining material layer is removed. The first substrate 104 that has finished scanning with the laser light is transferred to a cleaning chamber 577 for cleaning the first substrate after laser irradiation, and the remaining material layer is removed.

Although a single layer of a material layer can be selectively formed on the second substrate 137 by the above-described procedure, a third substrate is prepared in advance and the scanning of the laser light is finished in the case of performing stacked film formation. The first substrate 104 is replaced with the second substrate 137 in the laser light irradiation chamber 515 to be aligned, and the pair of substrate holding means 516 keeps the distance between the substrates constant. Thereafter, the pair of substrates is irradiated with laser light, and the laser light irradiation region is relatively moved to perform the second laser light scanning.

Note that the third substrate is provided with a light absorption layer, and is set in the first cassette chamber 571, the second cassette chamber 572, or the third cassette chamber 573, similarly to the first substrate. As appropriate, a second material layer is formed in the treatment chamber.

Further, in the case of stacking in the laser beam irradiation chamber 515, the fourth substrate is loaded without causing the second substrate to be unloaded from the laser beam irradiation chamber 515, and the second substrate and the fourth substrate are opposed to each other. Then, alignment is performed, the laser beam is irradiated, the laser beam irradiation region is relatively moved, and the laser beam is scanned a third time. Four or more layers can be stacked in the same procedure.

In the case where film formation is performed using the laser beam irradiation chamber 515, the material layers are formed on the first substrate, the third substrate, the fourth substrate, and the like in advance before the second substrate is carried in. Then, after stocking in the processing chamber 518 and carrying the second substrate into the laser beam irradiation chamber 515, the deposition substrate is sequentially replaced, and the stacked film is formed, so that the process can be performed efficiently. . The film formation method in which a material layer previously formed on a substrate different from the deposition target substrate is heated with laser light limits the amount required for film formation, and the amount of evaporated material is smaller than that of the conventional resistance heating method. Therefore, a plurality of transfer robots, positioning means, substrate moving means, and the like can be installed in the laser light irradiation chamber 515 for film formation. In addition, a film formation method in which a material layer formed in advance on a substrate different from the deposition target substrate is heated with laser light is different even if different light emitting layers are formed in the same treatment chamber (laser light irradiation chamber 515). It is possible to prevent the light emitting material from being mixed.

In addition, although it is possible to form all five or more layers as EL layers constituting the light emitting element using the laser light irradiation chamber 515, at least one layer is formed using the laser light irradiation chamber 515. A film may be formed.

For example, after laminating a hole injection layer and a hole transport layer on the first electrode using the laser light irradiation chamber 515, a red light emitting layer and a green light emitting layer are selectively formed, The blue light-emitting layer may be formed by a resistance heating method in which the substrate is rotated in the processing chamber 512. In the case where a blue light-emitting layer is selectively formed, vapor deposition may be performed by transferring the vapor deposition mask stocked in the processing chamber 554 to the processing chamber 512 and aligning with the second substrate. The processing chamber 512 is provided with a deposition source, a substrate rotating unit, a unit for aligning the deposition mask, a film thickness monitor, and the like.

In the case where the electron transport layer or the electron injection layer is formed by a resistance heating method, the film may be formed in the treatment chamber 513. The processing chamber 513 is provided with a means for moving the second substrate in a direction indicated by an arrow in the chamber to pass above the vapor deposition source 537, a film thickness monitor, a vacuum exhaust processing chamber, and the like. The evaporation source 557 is long in a linear shape, and the evaporation material is heated by a resistance heating method. In the case of selectively forming a film, the vapor deposition mask stocked in the treatment chamber 554 is transferred to the treatment chamber 513, aligned and fixed with the second substrate, and the second substrate and the vapor deposition mask are moved. Then, vapor deposition may be performed.

In the case where the hole injection layer or the hole transport layer is formed by a resistance heating method, the film may be formed in the treatment chamber 555.

In the case where the red light emitting layer is formed by a resistance heating method, the film may be formed in the treatment chamber 511. In the case where the green light-emitting layer is formed by a resistance heating method, the film may be formed in the treatment chamber 556. The processing chambers 511 and 556 are each provided with a vapor deposition source, a substrate rotating means, a film thickness monitor, a means for aligning the vapor deposition mask, a vacuum exhaust processing chamber, and the like.

Further, although an example in which the second substrate is set in the fourth cassette chamber 570 and then transferred to the second transfer chamber 552 without being transferred into another processing chamber is shown, the transfer to the second transfer chamber 552 is performed. Before film formation, the second substrate may be deposited in the treatment chamber 575 or the treatment chamber 574 and then transferred to the laser light irradiation chamber 515 to be stacked. In that case, a polymer such as poly (3,4-ethylenedioxythiophene) / poly (styrenesulfonic acid) (PEDOT / PSS) can be used as a hole injection layer on the first electrode. As the substance having a high hole transporting property used for the hole injection layer, various compounds such as a high molecular compound (oligomer, dendrimer, polymer, etc.) can be used.

In addition, when PEDOT / PSS is formed by spin coating, the film is formed on the entire surface. Therefore, the connection region between the end surface, the peripheral portion, the terminal portion, the cathode (second electrode) of the second substrate and the lower wiring is formed. And the like are preferably removed selectively, and are preferably removed selectively by O ₂ ashing or the like using a mask in the pretreatment chamber 553. Plasma etching means is provided in the pretreatment chamber 553, and dry etching is performed by exciting one or a plurality of gases selected from Ar, H, F, and O to generate plasma. By using the mask, only unnecessary portions can be selectively removed. Further, a UV irradiation mechanism may be provided in the pretreatment chamber 553 so that ultraviolet irradiation can be performed as the surface treatment of the anode (first electrode). As described above, the pretreatment chamber 553 is preferably a treatment chamber that can perform not only vacuum heating but also other treatments such as plasma treatment and UV irradiation treatment.

After the film formation of the EL layer on the second substrate is completed by any one of the film formation procedures described above, an electrode to be the second electrode of the light emitting element is formed. Note that the second electrode is formed by a sputtering method, an electron beam method, or the like. In the case of using a sputtering method, the processing chamber 514 is provided with a plasma generating means, and a sputtering target and a means for introducing a material gas are provided. Since the sputtering method or the electron beam method forms a film by a face-down method, the second substrate can be smoothly transferred from the laser light irradiation chamber 515 or a treatment chamber using a resistance heating method.

In addition, after the second electrode is formed, the transfer unit 521 is used to carry into the delivery chamber 503 via the gate valve 540 and further to the sealing chamber 504 via the gate valve 541. The substrate which has been sealed in the sealing chamber 504 is transferred to the unload chamber 505 through the gate valve 542 and can be taken out of the manufacturing apparatus. Through the above procedure, a light-emitting diode (also referred to as an EL element) can be manufactured.

In the manufacturing apparatus shown in FIG. 7, gate valves 530 to 535, 538, and 560 to 566 are provided in the processing chambers or the transfer chambers under reduced pressure, respectively.

In addition, this embodiment can be combined with any of Embodiment Mode 1, Embodiment Mode 2, Embodiment Mode 3, Embodiment Mode 4, or Embodiment Mode 5. By using the manufacturing apparatus shown in this embodiment, the light-emitting element can be optimized.

4A and 4B illustrate a manufacturing process of a light-emitting device. Sectional drawing explaining a light emitting element. The figure explaining the upper surface shape of a partition. 4A and 4B illustrate a manufacturing process of a light-emitting device. 4A and 4B illustrate a manufacturing process of a light-emitting device. 4A and 4B illustrate a manufacturing process of a light-emitting device. The top view which shows an example of a manufacturing apparatus. The perspective view at the time of irradiation of a laser beam.

Explanation of symbols

101 First partition wall 102 Light absorption layer 103R, 103G, 103B Material layer 104 First substrate 112R, 112G, 112B Material liquid 113R, 113G, 113B Nozzle 110 Light 120 Window 137 Second substrate 138 First electrode 139 First Two partition walls 145 Hole transport layer 146 Red light emitting layer 147 Green light emitting layer 148 Blue light emitting layer

Claims (9)

Forming a light absorption layer on one surface of the first substrate;
Selectively forming a partition wall surrounding the light absorption layer;
A material liquid is discharged from a nozzle by pumping to selectively form a material layer in contact with the partition wall and the light absorption layer,
The surface on which the material layer of the first substrate is formed and the film formation surface of the second substrate are opposed to each other,
Irradiating the light absorption layer with light from the other surface side of the first substrate to selectively heat at least a part of the material layer at a position overlapping the light absorption layer; A film forming method characterized in that a film is formed on the film forming surface. Forming a light absorption layer on one surface of the first substrate;
The first material liquid is discharged from the first nozzle by pumping and the second material layer is discharged from the second nozzle by pumping and the second material layer is pumped by pumping. To discharge a third material liquid from the first nozzle to form a third material layer on the first substrate,
The surface on which the first material layer, the second material layer, and the third material layer of the first substrate are formed, and the deposition surface of the second substrate are opposed to each other,
The light absorption layer is irradiated with light from the other surface side of the first substrate, and the first material layer, the second material layer, and the third material are positioned so as to overlap the light absorption layer. A layer including a first organic compound, a layer including a second organic compound, and a layer including a third organic compound on a deposition surface of the second substrate by selectively heating at least a part of the layer; Forming a film. 3. The film forming method according to claim 1, wherein the material layer includes an organic compound. 4. The film formation method according to claim 1, wherein the light absorption layer has a thickness of 10 nm to 600 nm. 4. The film forming method according to claim 1, wherein the light absorption layer has a stripe shape. 5. Forming a light absorption layer on one surface of the first substrate;
Selectively forming a first partition wall surrounding the light absorption layer;
A material liquid is discharged from a nozzle by pumping to selectively form a material layer in contact with the first partition and the light absorption layer,
The surface of the first substrate on which the material layer is formed and the film formation surface of the second substrate having the first electrode,
Irradiating the light absorption layer with light from the other surface side of the first substrate to selectively heat at least a part of the material layer at a position overlapping the light absorption layer; Forming a layer containing an organic compound on the first electrode provided on the film formation surface of
Forming a second electrode on the layer containing the organic compound;
A method for manufacturing a light-emitting device, comprising: a plurality of first electrodes provided on a deposition surface of the second substrate; and a second partition that insulates the first electrodes from each other. The method for manufacturing a light-emitting device according to claim 6, wherein top shapes of the first partition and the second partition are different. 8. The method for manufacturing a light-emitting device according to claim 6, wherein the layer containing the organic compound contains an organic compound contained in the material layer. 9. The method for manufacturing a light-emitting device according to claim 6, wherein the light absorption layer has a thickness of 10 nm to 600 nm.

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