JP2009064631A - Manufacturing apparatus of display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing apparatus of a display device steadily stabilizing film thickness distribution of a thin film constituting a display element to ensure favorable display quality. <P>SOLUTION: This apparatus manufactures the display device having the display element with an organic active layer held between a pair of electrodes and includes a vapor-deposition source 410 radiating a material source for forming the thin film of the display element toward a processed substrate SUB, a shutter 450 disposed between the processed substrate SUB and the vapor-deposition source 410 to control the amount of the material source vapor-deposited from the vapor-deposition source 410 to the processed substrate SUB and an anti-adhering plate 460 disposed in contact with the vapor-deposition source side of the shutter 450 to prevent adhesion of the material source to the shutter 450. The heat absorptivity of the shutter 450 on its anti-adhering plate side is higher than that on its processed substrate side. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to an apparatus for manufacturing a display device including a self-luminous display element.

  In recent years, organic electroluminescence (EL) display devices have attracted attention as flat display devices. Since this organic EL display device includes an organic EL element that is a self-luminous element, the viewing angle is wide, the backlight can be thinned, the power consumption can be reduced, and the response speed can be reduced. It has the feature of being fast.

  Because of these features, organic EL display devices are attracting attention as potential candidates for next-generation flat display devices that replace liquid crystal display devices. As an organic EL display device, a bottom emission method in which EL light generated in the organic EL element is extracted from the array substrate side and an EL light generated in the organic EL element is extracted from the sealing substrate side to the outside. There is a top emission method.

  An organic EL element is provided on an array substrate together with a pixel circuit and the like, and is configured by holding an organic active layer containing an organic compound having a light emitting function between a first electrode (anode) and a second electrode (cathode). Yes. In such a configuration, for example, at least the light emitting layer of the first electrode and the organic active layer is disposed for each pixel. Further, the second electrode is arranged in common for a plurality of pixels.

In the manufacturing process of such an organic EL element, a vapor deposition method in which a material source radiated from a vapor deposition source is vapor-deposited is applied to a process of forming a thin film such as an organic active layer made of a low molecular organic compound or a second electrode. Is possible. For example, a technique is known in which a thin film is formed in a deposition region on a processing substrate by relatively moving a processing substrate to be deposited and a line-type deposition source (see, for example, Patent Document 1).
JP 2003-157773 A

  An object of the present invention is to provide a manufacturing apparatus that can stably stabilize the film thickness distribution of a thin film constituting a display element and manufacture a display device with good display quality.

An apparatus for manufacturing a display device according to an aspect of the present invention includes:
A manufacturing apparatus for manufacturing a display device including a display element configured to hold an organic active layer between a pair of electrodes,
An evaporation source that emits a material source for forming a thin film constituting the display element toward the processing substrate;
A shutter that is disposed between the processing substrate and the deposition source, and controls a deposition amount of a material source from the deposition source onto the processing substrate;
An adhesion preventing plate disposed to contact the deposition source side of the shutter and preventing adhesion of a material source to the shutter, and
The shutter is characterized in that the heat absorption rate on the adhesion preventing plate side is higher than that on the processing substrate side.

  According to the present invention, it is possible to provide a manufacturing apparatus that can stably stabilize the film thickness distribution of the thin film constituting the display element and manufacture a display device with good display quality.

  Hereinafter, a display device manufacturing apparatus according to an embodiment of the present invention will be described with reference to the drawings. In this embodiment, a self-luminous display device such as an organic EL (electroluminescence) display device will be described as an example of the display device.

  As shown in FIG. 1, the organic EL display device 1 includes an array substrate 100 having an active area 102 for displaying an image. The active area 102 is composed of a plurality of pixels PX arranged in a matrix. Further, FIG. 1 shows a color display type organic EL display device 1 as an example, and the active area 102 includes a plurality of types of color pixels, for example, a red pixel PXR, a green pixel PXG, and a blue color corresponding to three primary colors. A pixel PXB is used.

  At least the active area 102 of the array substrate 100 is sealed with a sealing body 200. That is, the array substrate 100 and the sealing body 200 are bonded together by the sealing material 300 arranged in a frame shape so as to surround the active area 102. The sealing material 300 may be a photosensitive resin (for example, an ultraviolet curable resin) or a frit.

  Each pixel PX (R, G, B) includes a pixel circuit 10 and a display element 40 that is driven and controlled by the pixel circuit 10. The pixel circuit 10 shown in FIG. 1 is an example, and it goes without saying that a pixel circuit having another configuration may be applied. In the example shown in FIG. 1, the pixel circuit 10 includes a drive transistor DRT, a first switch SW1, a second switch SW2, a third switch SW3, a storage capacitor element CS, and the like. The drive transistor DRT has a function of controlling the amount of current supplied to the display element 40. The first switch SW1 and the second switch SW2 function as a sample / hold switch. The third switch element SW3 has a function of controlling driving current supply from the driving transistor DRT to the display element 40, that is, on / off of the display element 40. The storage capacitor element CS has a function of holding the potential between the gate and source of the drive transistor DRT.

  The drive transistor DRT is connected between the high potential power supply line P1 and the third switch SW3. The display element 40 is connected between the third switch SW3 and the low potential power line P2. The gate electrodes of the first switch SW1 and the second switch SW2 are connected to the first gate line GL1. The gate electrode of the third switch SW3 is connected to the second gate line GL2. The source electrode of the first switch SW1 is connected to the video signal line SL. The drive transistor DRT, the first switch SW1, the second switch SW2, and the third switch element SW3 are configured by, for example, thin film transistors, and the semiconductor layer is formed of polysilicon here.

  In the case of such a circuit configuration, the first switch SW1 and the second switch SW2 are turned on based on the ON signal supplied from the first gate line GL1, and the high potential is set according to the amount of current flowing through the video signal line SL. A current flows from the power supply line P1 to the drive transistor DRT, and the storage capacitor element CS is charged according to the current flowing through the drive transistor DRT. As a result, the drive transistor DRT can supply the same amount of current as that supplied from the video signal line SL to the display element 40 from the high potential power supply line P1.

  Then, the third switch SW3 is turned on based on the ON signal supplied from the second gate line GL2, and the driving transistor DRT is connected to the first potential from the high potential power supply line P1 according to the capacitance held in the storage capacitor element CS. A predetermined amount of current corresponding to a predetermined luminance is supplied to the display element 40 via the three switch SW3. Thereby, the display element 40 emits light with a predetermined luminance.

  The display element 40 includes an organic EL element 40 (R, G, B) that is a self-luminous display element. That is, the red pixel PXR includes an organic EL element 40R that mainly emits light corresponding to the red wavelength. The green pixel PXG includes an organic EL element 40G that mainly emits light corresponding to the green wavelength. The blue pixel PXB includes an organic EL element 40B that mainly emits light corresponding to the blue wavelength.

  The various organic EL elements 40 (R, G, B) have basically the same configuration, and are disposed on the wiring substrate 120 as shown in FIG. Note that the wiring board 120 includes various switches SW, driving transistors DRT, storage capacitor elements Cs, various wirings (gate lines, video signal lines, power supply lines, etc.) on an insulating support substrate such as a glass substrate. It shall be configured.

  The organic EL element 40 includes a pair of electrodes, that is, a first electrode 60 disposed in an independent island shape for each pixel PX, and a second electrode disposed opposite to the first electrode 60 and disposed in common with the plurality of pixels PX. The organic active layer 62 is held between the electrode 64 and the detailed structure will be described below.

  That is, the 1st electrode 60 which comprises the organic EL element 40 is arrange | positioned on the wiring board 120 surface, and functions as an anode. The first electrode 60 is in contact with the drain electrode of the third switch SW3. The first electrode 60 is formed of a light-transmitting conductive material such as indium tin oxide (ITO) and a light-reflective conductive material such as aluminum (Al). Further, it may be constituted by a laminated body in which a reflective layer is laminated, or may be constituted by a single transmissive layer or a single reflective layer.

  The organic active layer 62 is disposed on the first electrode 60 and includes at least the light emitting layer 62A. The organic active layer 62 can include functional layers other than the light emitting layer 62A, and includes, for example, functional layers such as a hole injection layer, a hole transport layer, a blocking layer, an electron transport layer, an electron injection layer, and a buffer layer. Can do. The organic active layer 62 may be composed of a single layer in which a plurality of functional layers are combined, or may have a multilayer structure in which the functional layers are stacked. In the organic active layer 62, the light emitting layer 62A may be an organic material, and layers other than the light emitting layer 62A may be an inorganic material or an organic material. In the organic active layer 62, the functional layer other than the light emitting layer 62A may be a common layer. In the example shown in FIG. 2, the hole side common layer 62H disposed on the first electrode 60 side includes a hole injection layer and a hole injection layer. The electron side common layer 62E including the hole transport layer and disposed on the second electrode 64 side includes a blocking layer, an electron transport layer, and an electron injection layer. The light emitting layer 62A includes the hole side common layer 62H and It arrange | positions between the electronic side common layers 62E. The light emitting layer 62A is formed of an organic compound having a light emitting function that emits red, green, or blue light.

  The second electrode 64 is disposed in common on the organic active layer 62 of each color pixel PX and functions as a cathode. The second electrode 64 has a semi-transmissive layer. This semi-transmissive layer is formed of a mixture of silver (Ag) and magnesium (Mg). The second electrode 64 may include a transmission layer formed using a light-transmitting conductive material such as ITO.

  In addition, the array substrate 100 includes a partition wall 70 that separates the pixels PX (R, G, B) at least for each adjacent color in the active area 102. The partition wall 70 is disposed, for example, so as to cover the periphery of each first electrode 60, and is formed in a lattice shape or a stripe shape in the active area 102. Such a partition 70 is formed by patterning a resin material, for example. The partition wall 70 is covered with the second electrode 64.

  Furthermore, the active area 102 of the array substrate 100 may be covered with a protective film (not shown). Such a protective film is formed of an inorganic material such as a silicon nitride film or a silicon oxide film. Further, the protective film may include a thin film formed of an organic material.

  Next, a manufacturing apparatus for forming a thin film constituting the organic EL element 40 as described above will be described.

  As shown in FIG. 3, a vapor deposition apparatus 400 that is a manufacturing apparatus forms a thin film on a processing substrate SUB that is a vapor deposition target, and includes a vapor deposition source 410, a holding mechanism 420, and a vapor deposition mask inside a chamber 401. 430 and a monitor 440.

  The vapor deposition source 410 emits a material source for forming a thin film constituting the organic EL element 40, and is configured to heat the crucible by, for example, a resistance heating method and scatter the material source. The holding mechanism 420 is configured to hold the processing substrate SUB so as to face the vapor deposition source 410 and to rotate the processing substrate SUB together with the vapor deposition mask 430 during film formation. The vapor deposition mask 430 is made of, for example, metal, is disposed between the vapor deposition source 410 and the processing substrate SUB, and has a desired opening pattern (for example, an opening pattern corresponding to the active area 102). The monitor 440 is configured to detect the deposition rate of the material source emitted from the deposition source 410.

  Further, as illustrated in FIGS. 3 and 4, the vapor deposition apparatus 400 is disposed so as to be in contact with the shutter 450 disposed between the processing substrate SUB and the vapor deposition source 410 and the vapor deposition source 410 side of the shutter 450. An adhesion prevention plate 460.

  The shutter 450 controls the amount of vapor deposition of the material source from the vapor deposition source 410 onto the processing substrate SUB. The shutter 450 is closed in a standby state to suppress scattering of the material source toward the processing substrate SUB, and is monitored by the monitor 440. It is opened when it is detected that the vapor deposition rate has been reached, and the material source is allowed to scatter to the processing substrate SUB side. The shutter 450 is made of, for example, aluminum (Al).

  The adhesion preventing plate 460 prevents the material source from adhering to the shutter 450 and is fixed to the shutter 450 by a method such as screwing. The adhesion preventing plate 460 is formed larger than the shutter 450 in order to prevent adhesion to the shutter 450 due to the scattering of the material source that scatters. The deposition preventing plate 460 is made of, for example, stainless steel (SUS). The adhesion preventing plate 460 can be attached to and detached from the shutter 450, and the material source attached to the adhesion preventing plate 460 is removed after the adhesion preventing plate 460 is removed from the shutter 450.

  The vapor deposition apparatus 400 further includes a cooling mechanism 470 that cools the shutter 450. In this embodiment, a water cooling pipe is disposed as the cooling mechanism 470 on the processing substrate SUB side of the shutter 450.

  The vapor deposition apparatus 400 as described above can be applied to form the second electrode 64 constituting the organic EL element 40, for example. In this embodiment, the second electrode 64 is made of a semi-transmissive layer containing silver (Ag) and magnesium (Mg). In forming the second electrode 64, the deposition source 410 is heated to a relatively high temperature (about 1000 ° C.) in order to scatter silver and magnesium. In this case, a single deposition source 410 may be filled with a mixture of silver and magnesium, or two deposition sources may be prepared, one filled with silver and one filled with magnesium.

  When the second electrode 64 formed by the vapor deposition apparatus 400 is affected by heat during the film formation (that is, when the processing substrate SUB is heated to a high temperature), the surface unevenness is increased, and the desired thin film is desired. May not be obtained. In such a case, the light extraction efficiency from the organic EL element 40 is reduced in the top emission method.

  Further, when the second electrode 64 is affected by heat, the sheet resistance value tends to increase. FIG. 5 is a diagram showing the relationship of the sheet resistance value (Ω / □) to the substrate temperature (° C.) of an electrode made of a mixture of silver and magnesium. In the example shown here, it can be confirmed that when the substrate temperature exceeds 50 ° C., the sheet resistance value tends to rapidly increase.

  As described above, the higher the temperature of the processing substrate SUB during film formation, the more the characteristics of the formed second electrode 64 deteriorate. Therefore, it is extremely important to suppress the temperature rise of the processing substrate SUB during film formation. .

  In particular, in the vapor deposition apparatus 400 configured as shown in FIG. 3, it is important to suppress the radiant heat from the deposition preventing plate 460 exposed from the shutter 450 rather than the shutter 450 facing the processing substrate SUB.

  That is, since the shutter 450 is cooled by the cooling mechanism 470, the temperature during film formation is about 40 ° C to 60 ° C. For this reason, the influence of the radiant heat from the shutter 450 is small. On the other hand, the deposition preventing plate 460 facing the vapor deposition source 410 that becomes a high temperature during film formation absorbs the heat radiated from the vapor deposition source 410, so that the temperature during the film formation rises to 150 ° C. to 200 ° C. Yes. The shutter 450 is mainly made of aluminum and has a low heat absorption rate of several percent. For this reason, the heat accumulated in the deposition preventing plate 460 is not easily absorbed by the shutter 450, and the radiant heat from the deposition preventing plate 460 exposed from the shutter 450 is a glass substrate having a high heat absorption rate (85%) (supporting Absorbed by the substrate). As a result, the temperature of the processing substrate SUB rises to 60 ° C to 80 ° C. For this reason, it is important to cool (or dissipate heat) the deposition preventing plate 460 efficiently.

  Therefore, in this embodiment, the shutter 450 is configured such that the heat absorption rate on the adhesion preventing plate 460 side is higher than that on the processing substrate SUB side. As a result, the heat accumulated in the deposition preventive plate 460 can be easily conducted to the shutter 450, the temperature rise of the deposition preventive plate 460 can be suppressed, and the influence of the radiant heat from the deposition preventive plate 460 is reduced to reduce the processing substrate SUB It becomes possible to suppress the temperature rise. For this reason, it becomes possible to suppress the increase in the surface unevenness of the thin film and the increase in the sheet resistance value due to the temperature rise of the processing substrate SUB during the film formation. That is, the film thickness distribution of the formed thin film can be steadily stabilized, the light extraction efficiency can be improved, the sheet resistance value can be reduced, and a display device with good display quality can be obtained. Can be provided.

  The configuration of the shutter 450 will be described more specifically.

  In the example shown in FIG. 6A, the shutter 450 includes a base material 450A and a heat absorption layer 450B disposed on the base plate 450A side of the base material 450A. The base material 450A is made of, for example, a metal material mainly composed of aluminum. The heat absorption layer 450B is in surface contact with the surfaces of the base material 450A and the deposition preventive plate 460, and is formed of a material having a characteristic of promoting heat conduction from the deposition preventive plate 460 to the shutter 450 itself. Note that the heat absorption layer 450B may be a layer formed on the surface of the base material 450A by vapor deposition, CVD, sputtering, or the like, or may be a sheet-like layer that is in close contact with the surface of the base material 450A. As the heat absorption layer 450B, a material having a higher heat absorption rate than that of the base material 450A is applied. Here, a carbon sheet can be applied as the heat absorption layer 450B.

  With such a configuration, the heat accumulated in the deposition preventing plate 460 is efficiently absorbed by the heat absorption layer 450B having a relatively high heat absorption rate. For this reason, it becomes possible to suppress the temperature rise of the deposition preventing plate 460. Further, the heat absorbed by the heat absorption layer 450B is efficiently absorbed by the base material 450A that is in close contact therewith. The surface of the base material 450A (that is, the surface facing the processing substrate SUB) is cooled by the cooling mechanism 470. For this reason, it is possible to suppress the temperature rise of the shutter 450 itself. Therefore, the radiant heat from the deposition preventing plate 460 is reduced, and the temperature rise of the processing substrate SUB can be suppressed.

  In the example shown in FIG. 6B, the surface of the shutter 450 that contacts the deposition preventing plate 460 of the base material 450A is blackened. The base material 450A is made of, for example, a metal material mainly composed of aluminum. For example, blackening treatment such as thermal spraying of titanium oxide is performed on one surface of the base material 450A. The shutter 450 is configured by a base material 450 </ b> A that is arranged so that the blackened surface 450 </ b> H contacts the deposition preventing plate 460.

  Thereby, the heat absorption rate of the surface of the shutter 450 on the adhesion preventing plate 460 side can be increased, and heat conduction from the adhesion preventing plate 460 to the shutter 450 can be promoted. For this reason, it becomes possible to suppress the temperature rise of the deposition preventing plate 460. Therefore, the radiant heat from the deposition preventing plate 460 is reduced, and the temperature rise of the processing substrate SUB can be suppressed.

  Next, a method for manufacturing the organic EL element according to this embodiment will be described.

  First, in the active area 102 on the wiring board 120, the independent island-shaped first electrode 60 is formed for each of a plurality of types of pixels PX (R, G, B). That is, the first electrode 60 is formed by patterning a metal film functioning as an anode on one main surface side of the wiring board 120. The first electrode 60 may be generally formed by a photolithography process or by a vapor deposition method in which a metal material is vapor-deposited through a mask having a pattern corresponding to the pixel PX (R, G, B). You may do it.

  Subsequently, a partition wall 70 that separates the pixels PX (R, G, B) is formed. That is, a photosensitive resin material, for example, an acrylic type positive tone resist is formed on the entire main surface of the wiring substrate 120 including the first electrode 60, and then patterned by a photolithography process, followed by baking. . Thereby, a grid-like partition wall 70 is formed along the periphery of the first electrode 60 so as to surround each color pixel PX (R, G, B).

  Subsequently, an organic active layer 62 is formed on the first electrode 60 in each pixel PX (R, G, B). Here, the organic active layer 62 is formed by laminating a plurality of thin films, that is, a hole injection layer, a hole transport layer, a light emitting layer 62A, a blocking layer, and an electron transport layer.

  First, a hole injection layer and a hole transport layer that are common to a plurality of types of pixels PX (R, G, B) are continuously formed by vapor deposition or the like to form a hole-side common layer 62H. Here, CuPc (copper phthalocyanine) was applied as a material functioning as a hole injection layer. Moreover, (alpha) -NPD (aromatic diamine) was applied as a material which functions as a hole transport layer.

Thereafter, an individual light emitting layer 62A is formed on each of the pixels PX (R, G, B) by vapor deposition or the like. Here, as the light emitting layer 62A disposed in the red pixel PXR, Alq ₃ (aluminum-kylinol complex) is applied as the host material, and DCM dye is applied as the dopant material, and as the light emitting layer 62A disposed in the green pixel PXG, the host material is formed. Alq ₃ (aluminum-kyrinol complex), a coumarin dielectric as the dopant material, and a light-emitting layer 62A disposed in the blue pixel PXB, Alq ₃ (aluminum-kyrinol complex) as the host material, and perylene as the dopant material did.

Thereafter, a common blocking layer and an electron transport layer are successively formed on a plurality of types of color pixels PX (R, G, B) by vapor deposition or the like, thereby forming an electron-side common layer 62E. Here, BCP (Basokyoproin) was applied as a blocking layer. In addition, Alq ₃ (aluminum kilinol complex) was applied as the electron transport layer.

  Subsequently, a second electrode 64 common to a plurality of types of pixels PX (R, G, B) is formed on the organic active layer 62. Here, the second electrode 64 is formed of a mixture of magnesium and silver. In the formation process of the second electrode 64, a manufacturing apparatus as described with reference to FIG. 3 is applied.

  That is, the second electrode 64 is formed by vapor deposition on one main surface side of the wiring substrate 120 on which the organic active layer 62 is disposed. Here, as shown in FIG. 3, first, the holding mechanism 420 holds the wiring substrate (that is, the processing substrate SUB) so that the main surface on which the organic active layer 62 is formed faces the vapor deposition source 410 side. That is, the wiring board 120 is sucked through the vapor deposition mask 430 attached to the frame-shaped mask frame by the holding mechanism 420 in the vacuum atmosphere inside the chamber 401, thereby forming the main layer on which the organic active layer 62 is formed. The surface is held so as to face the vapor deposition source 410. The wiring board 120 held in this way is opposed to the vapor deposition source 410 disposed at a predetermined interval below the shutter 450 through the closed shutter 450. Here, the shutter 450 is configured as in the example shown in FIG. 6A, and includes a carbon sheet as the heat absorption layer 450B.

  On the other hand, in the vapor deposition source 410, when the material source filled is heated and scattering of the material source is started, the vapor deposition rate is detected by the monitor 440. Then, when the monitor 440 detects that the desired vapor deposition rate has been reached, the shutter 450 is opened. Thereby, the scattered material source is selectively deposited on the portion of the main surface of the wiring board 120 that is not covered by the deposition mask 430.

  By such a process, the organic EL element 40 is formed.

  In the vapor deposition process of the second electrode 64, the heat accumulated in the deposition preventive plate 460 can be efficiently absorbed by the water-cooled shutter 450. Therefore, the temperature of the deposition preventive plate 460 is set to 40 ° C. It could be lowered to ˜70 ° C. As a result, the transfer of heat to the processing substrate SUB decreased, and the temperature of the processing substrate SUB became 30 ° C. to 50 ° C.

  According to the organic EL element 40 formed in this way, it was confirmed that the film thickness distribution of the second electrode 64 was substantially uniform. In addition, since the temperature of the processing substrate SUB is suppressed to 50 ° C. or lower, the sheet resistance value of the second electrode 64 is 1. It was confirmed that it was on the order of E + 00 (Ω / □) and was sufficiently reduced to the extent that display quality was not affected.

  Note that the present invention is not limited to the above-described embodiment as it is, and can be embodied by modifying the constituent elements without departing from the spirit of the invention in the stage of implementation. Further, various inventions can be formed by appropriately combining a plurality of constituent elements disclosed in the embodiment. For example, some components may be deleted from all the components shown in the embodiment. Furthermore, you may combine suitably the component covering different embodiment.

  In the above-described embodiment, the vapor deposition apparatus 400 is applied to form the second electrode 64, but at least a part of another thin film such as the organic active layer 62 formed in a relatively high temperature environment. This can also be applied to a protective layer covering the second electrode 64 and the second layer.

FIG. 1 is a diagram schematically showing a configuration of an organic EL display device according to an embodiment of the present invention. FIG. 2 is a cross-sectional view schematically showing the structure of one pixel of the organic EL display device shown in FIG. FIG. 3 is a diagram schematically showing a configuration of a manufacturing apparatus (evaporation apparatus) for manufacturing an organic EL element. FIG. 4 is a plan view schematically showing the structure of the manufacturing apparatus shown in FIG. 3 when the shutter and the heat insulating plate are viewed from the processing substrate side. FIG. 5 is a view showing the relationship of the sheet resistance value with respect to the substrate temperature of the second electrode constituting the organic EL element shown in FIG. 6A is a cross-sectional view schematically showing an example of the structure of a shutter applicable to the manufacturing apparatus shown in FIG. 6B is a cross-sectional view schematically showing another example of the structure of the shutter applicable to the manufacturing apparatus shown in FIG.

Explanation of symbols

PX (R, G, B) ... pixel 10 ... pixel circuit 40 ... display element (organic EL element)
DESCRIPTION OF SYMBOLS 60 ... 1st electrode 62 ... Organic active layer 64 ... 2nd electrode 70 ... Partition 100 ... Array substrate 102 ... Active area 120 ... Wiring board 200 ... Sealing body 300 ... Sealing material 400 ... Deposition apparatus 401 ... Chamber 410 ... Deposition source 420 ... Holding mechanism 430 ... Evaporation mask 440 ... Monitor 450 ... Shutter 450A ... Base material 450B ... Heat absorption layer 460 ... Deposition plate 470 ... Cooling mechanism SUB ... Processing substrate

Claims (5)

A manufacturing apparatus for manufacturing a display device including a display element configured to hold an organic active layer between a pair of electrodes,
An evaporation source that emits a material source for forming a thin film constituting the display element toward the processing substrate;
A shutter that is disposed between the processing substrate and the deposition source, and controls a deposition amount of a material source from the deposition source onto the processing substrate;
An adhesion preventing plate disposed to contact the deposition source side of the shutter and preventing adhesion of a material source to the shutter, and
The said shutter is a manufacturing apparatus characterized by the heat absorption rate by the side of the said adhesion prevention board being higher than the said process substrate side. The shutter is
A substrate;
The heat absorption layer which is arrange | positioned on the surface at the side of the said adhesion prevention board of the said base material, and accelerates | stimulates the heat conduction from the said adhesion prevention board to the said shutter, It was comprised, The structure characterized by the above-mentioned. Manufacturing equipment.   The manufacturing apparatus according to claim 2, wherein the heat absorption layer has a higher heat absorption rate than the base material.   The manufacturing apparatus according to claim 1, wherein a surface of the shutter that is in contact with the deposition preventing plate is blackened.   The manufacturing apparatus according to claim 1, further comprising a cooling mechanism for cooling the shutter.

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