US9061534B2 - Donor substrate, method of manufacturing donor substrate, and method of manufacturing organic light-emitting display device - Google Patents
Donor substrate, method of manufacturing donor substrate, and method of manufacturing organic light-emitting display device Download PDFInfo
- Publication number
- US9061534B2 US9061534B2 US13/955,706 US201313955706A US9061534B2 US 9061534 B2 US9061534 B2 US 9061534B2 US 201313955706 A US201313955706 A US 201313955706A US 9061534 B2 US9061534 B2 US 9061534B2
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- donor substrate
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Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/26—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
- B41M5/382—Contact thermal transfer or sublimation processes
- B41M5/38242—Contact thermal transfer or sublimation processes characterised by the use of different kinds of energy to effect transfer, e.g. heat and light
-
- H01L27/32—
-
- H01L51/009—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/162—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using laser ablation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/851—Division of substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/361—Polynuclear complexes, i.e. complexes comprising two or more metal centers
Definitions
- the following description relates to a donor substrate, a method of manufacturing the donor substrate, and a method of manufacturing an organic light-emitting display device.
- OLED organic light-emitting display device
- a comparable method of manufacturing an OLED uses processes, such as a printing process utilizing inkjet printing, spin coating, nozzle deposition, etc.; a process of depositing and then patterning a layer; or a transfer process utilizing heat or laser beams.
- a laser induced thermal imaging (LITI) process is capable of finely patterning an organic layer and is easy to perform.
- a transfer assist layer e.g., a light-to-heat conversion layer
- the thermal energy causes a transfer layer to be transferred onto an element substrate.
- the transfer layer may not be easily separated from the donor substrate in the transfer process. Therefore, the transfer layer may not be transferred exactly to a desired region of the element substrate. Conversely, the transfer layer may be too easily separated from the donor substrate and thus be transferred even to an undesired region of the element substrate. That is, an “unwanted transfer” phenomenon may occur.
- aspects of the present invention are directed toward a donor substrate which can prevent an “unwanted transfer” phenomenon in which a transfer layer is separated from the donor substrate and transferred to an undesired region of an element substrate.
- aspects of the present invention are also directed toward a method of manufacturing a donor substrate which can prevent an “unwanted transfer” phenomenon in which a transfer layer is separated from the donor substrate and transferred to an undesired region of an element substrate.
- aspects of the present invention are also directed toward a method of manufacturing an organic light-emitting display device (OLED) which can prevent an “unwanted transfer” phenomenon in which a transfer layer is separated from a donor substrate and transferred to an undesired region of an element substrate, and can prevent the occurrence of encapsulation defects of the OLED.
- OLED organic light-emitting display device
- a donor substrate includes a base layer which includes an element region and an encapsulation region surrounding the element region, a transfer assist layer which is disposed on the base layer and includes a first uneven portion disposed on the encapsulation region, and a transfer layer which is disposed on the transfer assist layer, wherein the first uneven portion is formed on a surface of the transfer assist layer which contacts the transfer layer.
- a method of manufacturing a donor substrate includes forming a preliminary transfer assist layer on a base layer, converting the preliminary transfer assist layer into a transfer assist layer by selectively plasma-treating the preliminary transfer assist layer, and forming a transfer layer on the transfer assist layer.
- a method of manufacturing an organic light-emitting display device includes providing an element substrate which includes a first electrode and a pixel defining layer exposing a plurality of regions of the first electrode, laminating a donor substrate and the element substrate such that a transfer layer of the donor substrate faces the first electrode of the element substrate, and forming an organic layer by transferring the transfer layer onto the first electrode of the element substrate by irradiating laser beams to an element region of the donor substrate, wherein the donor substrate includes a base layer which includes the element region and an encapsulation region surrounding the element region, a transfer assist layer which is disposed on the base layer and includes a first uneven portion disposed on the encapsulation region, and a transfer layer which is disposed on the transfer assist layer, wherein the first uneven portion is formed on a surface of the transfer assist layer which contacts the transfer layer.
- FIG. 1 is a plan view of a donor substrate according to an embodiment of the present invention
- FIG. 2 is a cross-sectional view of the donor substrate taken along the line II-II of FIG. 1 ;
- FIG. 3 is a cross-sectional view illustrating an operation of forming a preliminary transfer assist layer on a base layer in a method of manufacturing the donor substrate of FIG. 1 ;
- FIG. 4 is a cross-sectional view illustrating an operation of converting the preliminary transfer assist layer into a transfer assist layer in the method of manufacturing the donor substrate of FIG. 1 ;
- FIG. 5 is a cross-sectional view illustrating an operation of forming a transfer layer on the transfer assist layer in the method of manufacturing the donor substrate of FIG. 1 ;
- FIG. 6 is a plan view of a donor substrate according to another embodiment of the present invention.
- FIG. 7 is a cross-sectional view of the donor substrate taken along the line VII-VII of FIG. 6 ;
- FIG. 8 is a cross-sectional view illustrating an operation of forming a preliminary transfer assist layer on a base layer in a method of manufacturing the donor substrate of FIG. 6 ;
- FIG. 9 is a cross-sectional view illustrating an operation of converting the preliminary transfer assist layer into a transfer assist layer in the method of manufacturing the donor substrate of FIG. 6 ;
- FIG. 10 is a cross-sectional view illustrating an operation of forming a transfer layer on the transfer assist layer in the method of manufacturing the donor substrate of FIG. 6 ;
- FIG. 11 is a cross-sectional view illustrating an operation of providing an element substrate in a method of manufacturing an organic light-emitting display device (OLED) according to an embodiment of the present invention
- FIG. 12 is a cross-sectional view illustrating an operation of laminating the donor substrate of FIG. 1 and the element substrate in the method of manufacturing the OLED according to the embodiment of the present invention
- FIG. 13 is a cross-sectional view illustrating an operation of forming an organic layer on a first electrode of the element substrate by irradiating laser beams to the donor substrate of FIG. 1 in the method of manufacturing the OLED according to the embodiment of the present invention
- FIG. 14 is a cross-sectional view illustrating an operation of separating the donor substrate of FIG. 1 from the element substrate in the method of manufacturing the OLED according to the embodiment of the present invention
- FIG. 15 is a cross-sectional view illustrating an operation of forming a second electrode on the organic layer in the method of manufacturing the OLED according to the embodiment of the present invention.
- FIG. 16 is a cross-sectional view illustrating an operation of forming an encapsulant and an encapsulation substrate on a base substrate in the method of manufacturing the OLED according to the embodiment of the present invention.
- Embodiments described herein will be described referring to plan views and/or cross-sectional views by way of ideal schematic views of the invention. Accordingly, the example views may be modified depending on manufacturing technologies and/or tolerances. Therefore, the embodiments of the invention are not limited to those shown in the views, but include modifications in configuration formed on the basis of manufacturing processes. Therefore, regions shown in the figures are for schematic illustrations only, and shapes of regions shown in the figures represent specific shapes of regions of elements only and do not limit aspects (scopes) of the invention.
- FIG. 1 is a plan view of a donor substrate 100 according to an embodiment of the present invention.
- FIG. 2 is a cross-sectional view of the donor substrate 100 taken along the line II-II of FIG. 1 .
- the donor substrate 100 may include a base layer 110 , a transfer assist layer 130 , and a transfer layer 140 .
- the base layer 110 may be formed of transparent polymers.
- the transparent polymers include polyester (such as polyethylene terephthalate), polyacryl, polyepoxy, polyethylene, polystyrene, and the like. Among these examples, a polyethylene terephthalate film is commonly used.
- the base layer 110 may also be formed of glass.
- the base layer 110 should have optical properties and mechanical stability as a support film.
- the base layer 110 may have a thickness of 10 to 500 ⁇ m.
- the base layer 110 may have a shape corresponding to that of an element substrate 710 (see FIG. 11 ) which will be described in more detail later.
- the shape and area of a surface of the base layer 110 may be the same as those of a surface of the element substrate 710 .
- the base layer 110 may be large enough to fully cover the element substrate 710 .
- the base layer 110 may be quadrangular shaped when seen in a plan view.
- the base layer 110 may include an element region 150 and an encapsulation region 160 .
- the element region 150 may correspond to a region of the element substrate 710 in which elements such as a first electrode 710 b (see FIG. 11 ) and a pixel defining layer 710 c (see FIG. 11 ) are formed. Specifically, if the donor substrate 100 and the element substrate 710 are laminated, the element region 150 may overlap the region of the element substrate 710 in which elements such as the first electrode 710 b and the pixel defining layer 710 c are formed.
- the element region 150 may be located in the middle of the base layer 110 .
- the element region 150 may be quadrangular shaped when seen in a plan view.
- the element region 150 may include a transfer region 150 a and a non-transfer region 150 b.
- the transfer region 150 a may be a region that is to be irradiated with laser beams 900 (see FIG. 13 ).
- the transfer region 150 a may be a region whose transfer layer 140 disposed on the transfer assist layer 130 is to be transferred onto the element substrate 710 .
- the transfer region 150 a may be formed in a region corresponding to each region of the first electrode 710 b which is exposed by the pixel defining layer 710 c .
- the transfer region 150 a may be shaped like a rectangle extending along one direction when seen in a plan view.
- the transfer region 150 a may be formed in the plural. In this case, the transfer regions 150 a may be separated from each other by a set or predetermined distance. In addition, the transfer regions 150 a may be rectangles extending along one direction and may be parallel to each other. The transfer regions 150 a may respectively cover a plurality of regions of the first electrode 710 b which are exposed by the pixel defining layer 710 c.
- the non-transfer region 150 b may be a region that is not to be irradiated with the laser beams 900 .
- the non-transfer region 150 b may be a region whose transfer layer 140 disposed on the transfer assist layer 130 is not to be transferred to the element substrate 710 .
- the non-transfer region 150 b may correspond to a region of the first electrode 710 b excluding the regions exposed by the pixel defining layer 710 c.
- the non-transfer region 150 b may surround the transfer region 150 a .
- the transfer region 150 a and the non-transfer region 150 b may be arranged alternately along the line II-II.
- the encapsulation region 160 may correspond to a region of the element substrate 710 in which elements such as the first electrode 710 b and the pixel defining layer 710 c are not formed. Specifically, if the donor substrate 100 and the element substrate 710 are laminated, the encapsulation region 160 may overlap the region of the element substrate 710 in which elements such as the first electrode 710 b and the pixel defining layer 710 c are not formed. In addition, the encapsulation region 160 may correspond to a region of the element substrate 710 in which an encapsulant 740 (see FIG. 16 ) is to be formed. Specifically, if the donor substrate 100 and the element substrate 710 are laminated, the encapsulation region 160 may overlap the region of the element substrate 710 in which the encapsulant 740 is to be formed.
- the encapsulation region 160 may be located in an edge region of the base layer 110 .
- the encapsulation region 160 may be shaped like a picture frame when seen in a plan view.
- the encapsulation region 160 may surround the element region 150 .
- the transfer assist layer 130 may be disposed on the base layer 110 .
- the transfer assist layer 130 may assist the transfer of the transfer layer 140 onto the element substrate 710 .
- the transfer assist layer 130 may convert the energy of the laser beams 900 irradiated to the donor substrate 100 into heat and transmit the heat to the transfer layer 140 .
- the transfer assist layer 130 may help the transfer layer 140 to be transferred onto the element substrate 710 .
- the transfer assist layer 130 may include a first uneven portion 130 a .
- the first uneven portion 130 a may be formed on the encapsulation region 160 .
- the first uneven portion 130 a may be formed on a surface of the transfer assist layer 130 which contacts the transfer layer 140 .
- the first uneven portion 130 a may be formed by plasma treatment.
- the present invention is not limited thereto, and the first uneven portion 130 a may also be formed by treatment with other gases such as ozone.
- the first uneven portion 130 a may include regular protruding and recessed shapes.
- the present invention is not limited thereto, and the first uneven portion 130 a may also include irregular protruding and recessed shapes.
- the surface of the transfer assist layer 130 which contacts the transfer layer 140 may be flat, excluding a region having the first uneven portion 130 a .
- a surface of the transfer assist layer 130 which contacts the transfer layer 140 disposed on the element region 150 may be flat.
- a shaded region indicates a region in which the first uneven region 130 a is formed.
- the surface of the transfer assist layer 130 which contacts the transfer layer 140 may have a different surface energy in each region thereof.
- the surface energy of a surface of the transfer assist layer 130 which contacts the transfer layer 140 disposed on the encapsulation region 160 may be greater than that of the surface of the transfer assist layer 130 which contacts the transfer layer 140 disposed on the element region 150 .
- the transfer assist layer 130 may include a light-to-heat conversion layer, an intermediate layer, and a buffer layer.
- the light-to-heat conversion layer may be disposed on the base layer 110 .
- the light-to-heat conversion layer absorbs light in an infrared-visible range and converts some of the light into heat.
- the light-to-heat conversion layer should have optical density and includes a light absorbing material.
- the light-to-heat conversion layer may be a metal layer (which contains aluminum oxide or aluminum sulfide as the light absorbing material) or a polymer organic layer (which contains carbon black, graphite or infrared dye as the light absorbing material). If the light-to-heat conversion layer is a metal layer, it may be formed to a thickness of 100 to 5,000 ⁇ by vacuum deposition, electron beam deposition or sputtering. If the light-to-heat conversion layer is a polymer organic layer, it may be formed to a thickness of 0.1 to 10 ⁇ m by a typical film coating method such as roll coating, gravure coating, extrusion coating, spin coating, or knife coating.
- the intermediate layer may be disposed between the light-to-heat conversion layer and the transfer layer 140 .
- the intermediate layer may prevent the light absorbing material (e.g., carbon black) of the light-to-heat conversion layer from contaminating the transfer layer 140 formed in a subsequent process.
- the intermediate layer may be formed of acrylic resin or alkyd resin.
- the intermediate layer may be formed by a typical coating process such as solvent coating and a curing process such as ultraviolet curing.
- the buffer layer may be disposed between the light-to-heat conversion layer and the transfer layer 140 , or, if the intermediate layer is present, between the intermediate layer and the transfer layer 140 .
- the buffer layer may be formed to prevent damage to organic layers in the transfer layer 140 and effectively adjust the adhesion between the light-to-heat conversion layer and the transfer layer 140 , or, if the intermediate layer is present, between the intermediate layer and the transfer layer 140 .
- the buffer layer may contain at least one of an insulating material, a metal, and a metal oxide.
- the transfer layer 140 may be disposed on the transfer assist layer 130 .
- the transfer layer 140 may be separated from the donor substrate 100 by thermal energy transmitted from the transfer assist layer 130 and then patterned or transferred to form an organic layer 720 on the element substrate (see FIG. 14 ).
- the transfer layer 140 may include organic material layers included in an organic light-emitting display device (OLED), that is, an organic light-emitting layer (EML), a hole injection layer (HIL), a hole transport layer (HTL), an electron injection layer (EIL), an electron transport layer (ETL), etc.
- OLED organic light-emitting display device
- EML organic light-emitting layer
- HIL hole injection layer
- HTL hole transport layer
- EIL electron injection layer
- ETL electron transport layer
- ETL electron transport layer
- the transfer layer 140 may have a single layer structure including one layer selected from the above organic material layers or a multilayer structure including two or more layers selected from the above organic material layers.
- the EML may contain organic light-emitting materials for generating light of different colors, such as red light, green light, blue light, etc.
- the EML may be formed to mix the organic light-emitting materials so as to emit white light.
- the EML may use the organic light-emitting materials as a dopant and may additionally contain a host material.
- appropriate dopant and host materials may be selected according to whether the EML generates light using a fluorescent mechanism or a phosphorescent mechanism.
- Examples of an organic material contained in the HIL may include TCTA, m-TDATA, m-MTDAPB and 2-TNATA, and examples of an organic material contained in the HTL may include NPB, TPD, ⁇ -NPD, N-phenylcarbazole and polyvinylcarbazole.
- examples of an organic material contained in the ETL may include Alq, PBD, TAZ and rubrene, and examples of an organic material contained in the EIL may include alkali metals (e.g., lithium (Li), sodium (Na), cesium (Cs), etc.), alkaline earth metals (e.g., barium (Ba), etc.), fluorides of these metals, chlorides of these metals and oxides of these metals.
- the transfer layer 140 may be formed all over the element region 150 and the encapsulation region 160 .
- the transfer layer 140 may contact the surface of the transfer assist layer 130 which includes the first uneven portion 130 a .
- the adhesion between the transfer layer 140 and the transfer assist layer 130 may differ in each region.
- the adhesion between the transfer layer 140 and the transfer assist layer 130 on the encapsulation region 160 may be stronger than the adhesion between the transfer layer 140 and the transfer assist layer 130 on the element region 150 .
- the transfer layer 140 disposed on the element region 150 is separated from the donor substrate 100 and transferred to the element substrate 710 . That is, the transfer layer 140 disposed on the encapsulation region 160 may not be separated from the donor substrate 100 . In other words, the transfer layer 140 disposed on the encapsulation region 160 may not be transferred to the element substrate 710 . Therefore, it is possible to prevent an “unwanted transfer” phenomenon in which the transfer layer 140 is transferred to a region of the element substrate 710 which corresponds to the encapsulation region 160 (that is, a region of the element substrate 710 where the encapsulant 740 is to be formed) and thus forms the organic layer 720 .
- the region of the element substrate 710 where the encapsulant 740 is to be formed may be clean. If the encapsulant 740 is formed on this clean region of the element substrate 710 , it may be completely attached to the element substrate 710 , thereby preventing oxygen or moisture from penetrating into the OLED and reducing the efficiency and the life of the OLED. That is, the encapsulant 740 formed on this clean region of the element substrate 710 can prevent encapsulation defects of the OLED.
- FIG. 3 is a cross-sectional view illustrating an operation of forming a preliminary transfer assist layer 120 on a base layer 110 in a method of manufacturing the donor substrate 100 of FIG. 1 .
- FIG. 4 is a cross-sectional view illustrating an operation of converting the preliminary transfer assist layer 120 into a transfer assist layer 130 in the method of manufacturing the donor substrate 100 of FIG. 1 .
- FIG. 5 is a cross-sectional view illustrating an operation of forming a transfer layer 140 on the transfer assist layer 130 in the method of manufacturing the donor substrate 100 of FIG. 1 .
- elements substantially identical to those of FIGS. 1 and 2 are indicated by like reference numerals, and thus a redundant description thereof will be omitted.
- the base layer 110 may be prepared, and then the preliminary transfer assist layer 120 may be formed on the base layer 110 .
- the preliminary transfer assist layer 120 may be the transfer assist layer 130 before being treated with plasma 500 . Therefore, the preliminary transfer assist layer 120 may be formed of substantially the same material as the transfer assist layer 130 and may have substantially the same stacked structure as the transfer assist layer 130 .
- the preliminary transfer assist layer 120 may be formed by a vacuum deposition process, an electron beam deposition process, a sputtering process, or the like.
- the preliminary transfer assist layer 120 may be formed by a typical coating process such as a roll coating process, an extrusion coating process, a spin coating process, a knife coating process, or the like.
- the preliminary transfer assist layer 120 may be converted into the transfer assist layer 130 by selectively treating the preliminary transfer assist layer 120 with the plasma 500 .
- the preliminary transfer assist layer 120 disposed on an encapsulation region 160 may be treated with the plasma 500 by using a mask 300 having an opening corresponding to the encapsulation region 160 .
- the plasma 500 may react strongly with molecules of a surface of the preliminary transfer assist layer 120 disposed on the encapsulation region 160 , thereby changing the molecular structure of the surface of the preliminary transfer assist layer 120 disposed on the encapsulation region 160 .
- fine protrusions and recesses may be formed in the surface of the preliminary transfer assist layer 120 disposed on the encapsulation region 160 .
- the preliminary transfer assist layer 120 disposed on the encapsulation region 160 may overall be pared.
- the surface energy of a portion treated with the plasma 500 that is, the surface energy of a surface of the transfer assist layer 130 disposed on the encapsulation region 160 may be higher than the surface energy of a portion not treated with the plasma 500 , that is, the surface energy of a surface of the transfer assist layer 130 disposed on the element region 150 .
- a first uneven portion 130 a may be formed on the surface of the preliminary transfer assist layer 120 disposed on the encapsulation region 160 . That is, the preliminary transfer assist layer 120 can be converted into the transfer assist layer 130 by reforming the surface of the preliminary transfer assist layer 120 through treatment with the plasma 500 .
- the above-described plasma treatment is not only an environment-friendly surface treatment technology that does not produce harmful substances but also has an effect of removing foreign substances attached to the surface of the preliminary transfer assist layer 120 by changing the molecular structure of the surface of the preliminary transfer assist layer 120 .
- the plasma treatment does not include a chemical surface pre-treatment process using a solvent or chromic acid or an adhesive coating process, it does not produce materials harmful to water quality and the atmospheric environment.
- the transfer layer 140 may be formed on the transfer assist layer 130 .
- the transfer layer 140 may be formed using appropriate organic materials according to the organic material layers included therein through a vacuum deposition process, a spin coating process, a thermal deposition process, or the like.
- the transfer layer 140 may be formed all over an element region 150 and the encapsulation region 160 .
- the adhesion between the transfer layer 140 and the transfer assist layer 130 may differ in each region. That is, the adhesion between the transfer layer 140 and the transfer assist layer 130 on the encapsulation region 160 may be stronger than the adhesion between the transfer layer 140 and the transfer assist layer 130 on the element region 150 .
- the adhesion between the transfer layer 140 and the transfer assist layer 130 is adjusted to be different in each region by plasma treatment so as to prevent an “unwanted transfer” phenomenon in which the transfer layer 140 is transferred to a region of an element substrate 710 where an encapsulant 740 is to be formed and thus forms an organic layer 720 . Accordingly, the region of the element substrate 710 where the encapsulant 740 is to be formed can be maintained clean. If the donor substrate 100 manufactured using this method is employed to manufacture an OLED, encapsulation defects of the OLED can be prevented or reduced.
- FIG. 6 is a plan view of a donor substrate 101 according to another embodiment of the present invention.
- FIG. 7 is a cross-sectional view of the donor substrate 101 taken along the line VII-VII of FIG. 6 .
- elements substantially identical to those of FIGS. 1 and 2 are indicated by like reference numerals, and thus a redundant description thereof will be omitted.
- a transfer assist layer 131 may include a first uneven portion 131 a disposed on an encapsulation region 160 and a second uneven portion 131 b disposed on a non-transfer region 150 b .
- the first uneven portion 131 a and the second uneven portion 131 b may be formed at different locations but may have substantially the same shape (shape of protrusions and recessions on the surface). That is, the first uneven portion 131 a and the second uneven portion 131 b may have substantially the same shape and may be formed using substantially the same method.
- the first uneven portion 131 a and the second uneven portion 131 b may be formed by plasma treatment.
- first uneven portion 131 a and the second uneven portion 131 b may also be formed by treatment with other gases such as ozone.
- first uneven portion 131 a and the second uneven portion 131 b may include regular protruding and recessed shapes.
- the present invention is not limited thereto, and the first uneven portion 131 a and the second uneven portion 131 b may also include irregular protruding and recessed shapes.
- a surface of the transfer assist layer 131 which contacts a transfer layer 140 may be flat, excluding a region having the first uneven portion 131 a and the second uneven portion 131 b .
- a surface of the transfer assist layer 131 which contacts the transfer layer 140 disposed on a transfer region 150 a of an element region 150 may be flat.
- an average height of the surface of the transfer assist layer 131 which contacts the transfer layer 140 disposed on the transfer region 150 a of the element region 150 may be greater than or equal to an average height of the first uneven portion 131 a disposed on the non-transfer region 150 b and the encapsulation region 160 .
- a shaded region indicates a region in which the first uneven region 131 a and the second uneven portion 131 b are formed.
- the surface of the transfer assist layer 131 which contacts the transfer layer 140 may have a different surface energy in each region thereof.
- the surface energy of the surface of the transfer assist layer 131 which contacts the transfer layer 140 disposed on the non-transfer region 150 b and the encapsulation region 160 may be greater than that of a surface of the transfer assist layer 131 which contacts the transfer layer 140 disposed on the transfer region 150 a.
- the transfer layer 140 may be formed all over the element region 150 and the encapsulation region 160 .
- the transfer layer 140 may contact the surface of the transfer assist layer 131 which includes the first uneven portion 131 a and the second uneven portion 131 b .
- the adhesion between the transfer layer 140 and the transfer assist layer 131 may differ in each region.
- the adhesion between the transfer layer 140 and the transfer assist layer 131 on the non-transfer region 150 b and the encapsulation region 160 may be stronger than the adhesion between the transfer layer 140 and the transfer assist layer 131 on the transfer region 150 a.
- the transfer layer 140 disposed on the transfer region 150 a is separated from the donor substrate 101 and transferred to an element substrate 710 . That is, the transfer layer 140 disposed on the non-transfer region 150 b and the encapsulation region 160 may not be separated from the donor substrate 101 . In other words, the transfer layer 140 on the non-transfer region 150 b and the encapsulation region 160 may not be transferred to the element substrate 710 . Therefore, it is possible to prevent an “unwanted transfer” phenomenon in which the transfer layer 140 is transferred to a region of the element substrate 710 which corresponds to the non-transfer region 150 b and the encapsulation region 160 and thus forms an organic layer 720 .
- the organic layer 720 may not exist in the region of the element substrate 710 which corresponds to the non-transfer region 150 b and the encapsulation region 160 . Therefore, if this donor substrate 101 is used to manufacture an OLED, encapsulation defects, etc. of the OLED can be prevented or reduced.
- FIG. 8 is a cross-sectional view illustrating an operation of forming a preliminary transfer assist layer 121 on a base layer 110 in a method of manufacturing the donor substrate 101 of FIG. 6 .
- FIG. 9 is a cross-sectional view illustrating an operation of converting the preliminary transfer assist layer 121 into a transfer assist layer 131 in the method of manufacturing the donor substrate 101 of FIG. 6 .
- FIG. 10 is a cross-sectional view illustrating an operation of forming a transfer layer 140 on the transfer assist layer 131 in the method of manufacturing the donor substrate 101 of FIG. 6 .
- FIGS. 8 , 9 and 10 respectively correspond to the operations of FIGS. 3 , 4 and 5 , and thus a redundant description thereof will be omitted.
- the base layer 110 may be prepared, and then the preliminary transfer assist layer 121 may be formed on the base layer 110 .
- the preliminary transfer assist layer 121 may be the transfer assist layer 131 before being treated with plasma 500 .
- the preliminary transfer assist layer 121 may be converted into the transfer assist layer 131 by selectively treating the preliminary transfer assist layer 121 with the plasma 500 .
- the preliminary transfer assist layer 121 disposed on a non-transfer region 150 b and an encapsulation region 160 may be treated with the plasma 500 by using a mask 301 having openings corresponding to the non-transfer region 150 b and the encapsulation region 160 .
- FIG. 9 In the example embodiment of FIG.
- a first uneven portion 131 a may be formed on a surface of the preliminary transfer assist layer 121 disposed on the encapsulation region 160
- a second uneven portion 131 b may be formed on a surface of the preliminary transfer assist layer 121 disposed on the non-transfer region 150 b.
- the transfer layer 140 may be formed on the transfer assist layer 131 .
- the transfer layer 140 may be formed all over an element region 150 and the encapsulation region 160 .
- the adhesion between the transfer layer 140 and the transfer assist layer 131 may differ in each region. That is, the adhesion between the transfer layer 140 and the transfer assist layer 131 on the non-transfer region 150 b and the encapsulation region 160 may be stronger than the adhesion between the transfer layer 140 and the transfer assist layer 131 on a transfer region 150 a .
- the adhesion between the transfer layer 140 and the transfer assist layer 131 on the non-transfer region 150 b may be substantially equal to the adhesion between the transfer layer 140 and the transfer assist layer 131 on the encapsulation region 160 .
- the adhesion between the transfer layer 140 and the transfer assist layer 131 is adjusted to be different in each region by plasma treatment so as to prevent an “unwanted transfer” phenomenon in which the transfer layer 140 is transferred to a region of an element substrate 710 which corresponds to the non-transfer region 150 b and the encapsulation region 160 and thus forms an organic layer 720 . If the donor substrate 101 manufactured using the method is employed to manufacture an OLED, encapsulation defects, etc. of the OLED can be prevented or reduced.
- FIGS. 11 through 16 illustrate operations in a method of manufacturing the OLED 700 using the donor substrate 100 of FIG. 1 .
- FIG. 11 is a cross-sectional view illustrating an operation of providing an element substrate 710 in a method of manufacturing the OLED 700 according to an embodiment of the present invention.
- FIG. 12 is a cross-sectional view illustrating an operation of laminating the donor substrate 100 of FIG. 1 and the element substrate 710 in the method of manufacturing the OLED 700 according to the embodiment of the present invention.
- FIG. 11 is a cross-sectional view illustrating an operation of providing an element substrate 710 in a method of manufacturing the OLED 700 according to an embodiment of the present invention.
- FIG. 12 is a cross-sectional view illustrating an operation of laminating the donor substrate 100 of FIG. 1 and the element substrate 710 in the method of manufacturing the OLED 700 according to the embodiment of the present invention.
- FIG. 13 is a cross-sectional view illustrating an operation of forming an organic layer 720 on a first electrode 710 b of the element substrate 710 by irradiating laser beams 900 to the donor substrate 100 of FIG. 1 in the method of manufacturing the OLED 700 according to the embodiment of the present invention.
- FIG. 14 is a cross-sectional view illustrating an operation of separating the donor substrate 100 of FIG. 1 from the element substrate 710 in the method of manufacturing the OLED 700 according to the embodiment of the present invention.
- FIG. 15 is a cross-sectional view illustrating an operation of forming a second electrode 730 on the organic layer 720 in the method of manufacturing the OLED 700 according to the embodiment of the present invention.
- FIG. 16 is a cross-sectional view illustrating an operation of forming an encapsulant 740 and an encapsulation substrate 750 on a base substrate 710 a in the method of manufacturing the OLED 700 according to the embodiment of the present invention.
- elements substantially identical to those of FIGS. 1 and 2 are indicated by like reference numerals, and thus a redundant description thereof will be omitted.
- the element substrate 710 may be prepared.
- the element substrate 710 may include the base substrate 710 a , the first electrode 710 b formed on the base substrate 710 a , and a pixel defining layer 710 c exposing some regions of the first electrode 710 b.
- the base substrate 710 a may be a transparent insulating substrate formed of glass, quartz, ceramic, plastic, etc.
- the base substrate 710 a may be shaped like a flat plate and may be a flexible substrate that can be easily bent by an external force.
- the first electrode 710 b may be disposed on the base substrate 710 a .
- the first electrode 710 b may be provided in the plural, and the first electrode 710 b may have a plurality of regions exposed through a plurality of opening regions defined by the pixel defining layer 710 c.
- the first electrode 710 b may be formed of a reflective conductive material, a transparent conductive material, or a semi-transparent conductive material.
- the reflective conductive material may be lithium (Li), calcium (Ca), lithium fluoride/calcium (LiF/Ca), lithium fluoride/aluminum (LiF/Al), aluminum (Al), silver (Ag), magnesium (Mg), or gold (Au).
- the transparent conductive material may be indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), or indium oxide (In 2 O 3 ).
- the semi-transparent conductive material may be a co-deposition material containing one or more of Mg and Ag or may be one or more of Mg, Ag, Ca, Li, and Al.
- the first electrode 710 b may consist of multiple layers and may exhibit reflective, transparent, or semi-transparent characteristics depending on the stacked structure of the multiple layers.
- the first electrode 710 b may be formed by a sputtering process, an atomic layer deposition process, a vacuum deposition process, a printing process, or the like.
- the pixel defining layer 710 c may be formed on the first electrode 710 b .
- the pixel defining layer 710 c may include the opening regions arranged in a matrix.
- the pixel defining layer 710 c may be formed of an organic insulating material or an inorganic insulating material.
- the pixel defining layer 710 c may be formed of a photosensitizer that contains a black pigment. In this case, the pixel defining layer 710 c may serve as a light blocking member.
- the pixel defining layer 710 c may be formed by forming a photosensitive material layer (such as acrylic resin, polyimide, benzocyclobutene (BCB), etc.) on the first electrode 710 b and partially removing the photosensitive material layer through a selective exposure and development process.
- the pixel defining layer 710 c may be formed by forming a non-photosensitive organic or inorganic material layer on the first electrode 710 b and then partially etching the non-photosensitive organic or inorganic material layer.
- the element substrate 710 may include structures such as a switching element (which includes a thin-film transistor (TFT) structure, an oxide semiconductor structure, etc.), an insulating layer, and the like.
- a switching element which includes a thin-film transistor (TFT) structure, an oxide semiconductor structure, etc.
- an insulating layer and the like.
- the donor substrate 100 may be placed such that a transfer layer 140 faces the first electrode 710 b of the element substrate 710 , and then the donor substrate 100 and the element substrate 710 may be laminated. If the donor substrate 100 and the element substrate 710 are laminated, the transfer layer 140 of the donor substrate 100 may partially contact the base substrate 710 a and the pixel defining layer 710 c.
- a region of the element substrate 710 in which elements such as the first electrode 710 b and the pixel defining layer 710 c are formed may correspond to an element region 150 described above. Specifically, if the donor substrate 100 and the element substrate 710 are laminated, the region of the element substrate 710 in which elements such as the first electrode 710 b and the pixel defining layer 710 c are formed may be overlapped by the element region 150 .
- a region of the element substrate 710 in which each region of the first electrode 710 b exposed by the pixel defining layer 710 c is disposed may correspond to a transfer region 150 a described above. Specifically, if the donor substrate 100 and the element substrate 710 are laminated, the region of the element substrate 710 in which each region of the first electrode 710 b exposed by the pixel defining layer 710 c is disposed may be overlapped by the transfer region 150 a.
- a region of the element substrate 710 in which the pixel defining layer 710 c is disposed may correspond to a non-transfer region 150 b described above. Specifically, if the donor substrate 100 and the element substrate 710 are laminated, the region of the element substrate 710 in which the pixel defining layer 710 c is disposed may be at least partially overlapped by the non-transfer region 150 b.
- a region of the element substrate 710 in which elements such as the first electrode 710 b and the pixel defining layer 710 c are not formed may correspond to an encapsulation region 160 described above. Specifically, if the donor substrate 100 and the element substrate 710 are laminated, the region of the element substrate 710 in which elements such as the first electrode 710 b and the pixel defining layer 710 c are not formed may be overlapped by the encapsulation region 160 .
- the transfer region 150 a of the donor substrate 100 may be irradiated with the laser beams 900 by using a mask 302 having openings, each corresponding to the transfer region 150 a .
- the organic layer 720 may be formed on the first electrode 710 b of the element substrate 710 .
- the organic layer 720 may include an EML described above.
- the adhesion between the transfer layer 140 and a transfer assist layer 130 on the encapsulation region 160 of the donor substrate 100 is stronger than the adhesion between the transfer layer 140 and the transfer assist layer 130 on the element region 150 of the donor substrate 100 , only the transfer layer 140 disposed on the element region 150 , specifically, on the transfer region 150 a may be separated from the donor substrate 100 and transferred to the element substrate 710 . That is, the transfer layer 140 disposed on the encapsulation region 160 may not be separated from the donor substrate 100 . In other words, the transfer layer 140 disposed on the encapsulation region 160 may not be transferred to the element substrate 710 .
- the transfer layer 140 is transferred to a region of the element substrate 710 which corresponds to the encapsulation region 160 (that is, a region of the element substrate 710 where an encapsulant 740 is to be formed) and thus forms the organic layer 720 . Accordingly, because the organic layer 720 does not exist in the region of the element substrate 710 which corresponds to the encapsulation region 160 , that is, the region of the element substrate 710 where the encapsulant 740 is to be formed, the region of the element substrate 710 where the encapsulant 740 is to be formed may be clean.
- the donor substrate 100 may be separated from the element substrate 710 . That is, the used donor substrate 100 may be removed from the element substrate 710 .
- the transfer layer 140 existing on the encapsulation region 160 of the donor substrate 100 may be completely removed from the base substrate 710 a without remaining on the base substrate 710 a . This is possible because the adhesion between the transfer layer 140 and the transfer assist layer 130 on the encapsulation region 160 of the donor substrate 100 is stronger than the adhesion between the transfer layer 140 and the transfer assist layer 130 on the element region 150 of the donor substrate 100 .
- the second electrode 730 may be formed on the organic layer 720 .
- the second electrode 730 may be formed of a reflective conductive material, a transparent conductive material, or a semi-transparent conductive material.
- the reflective conductive material may be Li, Ca, LiF/Ca, LiF/Al, Al, Ag, Mg, or Au.
- the transparent conductive material may be ITO, IZO, ZnO, or In 2 O 3 .
- the semi-transparent conductive material may be a co-deposition material containing one or more of Mg and Ag or may be one or more of Mg, Ag, Ca, Li, and Al.
- the second electrode 730 may be formed by a sputtering process, an atomic layer deposition process, a vacuum deposition process, a printing process, or the like.
- the method of manufacturing the OLED 700 may further include an operation of forming a passivation layer which surrounds the first electrode 710 b , the pixel defining layer 710 c , and the second electrode 730 after the formation of the second electrode 730 on the organic layer 720 .
- the passivation layer may be an organic layer, an inorganic layer or a multilayer composed of these layers.
- the inorganic layer may be an insulating layer such as a silicon oxide (SiO 2 ) layer, a silicon nitride (SiNx) layer, or a silicon oxynitride (SiO x N y ) layer.
- the inorganic layer may be a LiF layer.
- the organic layer may be a layer containing NPB(N,N′-Bis(naphthalen-1-yl)-N,N′-bis(phenyl)benzidine), TNATA, TCTA, TDAPB, TDATA, Alq 3 , BAlq or CBP.
- the encapsulant 740 and an encapsulation substrate 750 may be formed on the base substrate 710 a . That is, the OLED 700 may be encapsulated.
- the encapsulant 740 may be formed of glass frit, and the encapsulation substrate 750 may be formed of insulating glass or plastic.
- the materials that form the encapsulant 740 and the encapsulation substrate 750 are not limited to those set forth herein, and the encapsulant 740 and the encapsulation substrate 750 may be formed of various suitable materials that can block external substances.
- the encapsulant 740 may be formed in a region of the element substrate 710 which corresponds to the encapsulation region 160 .
- the encapsulant 740 may be formed on an edge region of the base substrate 710 a .
- the encapsulant 740 may connect the base substrate 710 a and the encapsulation substrate 750 .
- An internal space surrounded by the encapsulant 740 , the base substrate 710 a , and the encapsulation substrate 750 may be isolated from the outside environment. That is, the encapsulant 740 , the base substrate 710 a , and the encapsulation substrate 750 may prevent external substances from penetrating into the organic layer 720 , etc.
- the encapsulant 740 may be completely attached to the element substrate 710 . Therefore, it is possible to prevent oxygen or moisture from penetrating into the OLED 700 and reducing the efficiency and the life of the OLED 700 . That is, encapsulation defects, etc. of the OLED 700 can be prevented or reduced.
- the method of manufacturing the OLED 700 using the donor substrate 100 of FIG. 1 is illustrated.
- the present invention is not limited thereto, and the OLED 700 can also be manufactured using the donor substrate 101 of FIG. 6 .
- a method of manufacturing the OLED 700 using the donor substrate 101 of FIG. 6 is substantially the same as the method of manufacturing the OLED 700 using the donor substrate 100 of FIG. 1 . That is, due to the first uneven portion 131 a and the second uneven portion 131 b included in the donor substrate 101 , the transfer layer 140 formed on the encapsulation region 160 and the non-transfer region 150 b of the donor substrate 101 may not be transferred to the element substrate 710 .
- Embodiments of the present invention provide at least one of the following enhancements.
- a transfer layer disposed on a transfer region can be separated from a donor substrate and transferred to an element substrate. That is, the transfer layer disposed on a non-transfer region and an encapsulation region may not be separated from the donor substrate. In other words, the transfer layer disposed on the non-transfer region and the encapsulation region may not be transferred to the element substrate. Therefore, it is possible to prevent an “unwanted transfer” phenomenon in which the transfer layer is transferred to a region of the element substrate which corresponds to the non-transfer region and the encapsulation region (that is, a region of the element substrate where an encapsulant is to be formed) and thus forms an organic layer.
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Abstract
Description
Claims (6)
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KR1020130047600A KR20140129464A (en) | 2013-04-29 | 2013-04-29 | Donor substrate, method of manufacturing a donor substrate and method of manufacturing an organic light emitting display device |
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US20140322842A1 US20140322842A1 (en) | 2014-10-30 |
US9061534B2 true US9061534B2 (en) | 2015-06-23 |
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KR102081209B1 (en) * | 2013-03-26 | 2020-02-26 | 삼성디스플레이 주식회사 | Organic light emitting display device and manufacturing method thereof, and donor substrate, donor substrate set using manufacturing organic light emitting display device thereof |
KR20180021292A (en) * | 2016-08-18 | 2018-03-02 | 삼성디스플레이 주식회사 | Display apparatus |
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2013
- 2013-04-29 KR KR1020130047600A patent/KR20140129464A/en not_active Application Discontinuation
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KR20100013448A (en) | 2008-07-31 | 2010-02-10 | 주식회사 도일인텍 | Surface decoration method for interior and exterior metherial using surface treatment by plasma |
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US20140322842A1 (en) | 2014-10-30 |
KR20140129464A (en) | 2014-11-07 |
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